Diodes Incorporated — Analog and discrete power solutions
TO252 DPAK

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. TO252 (DPAK)

TO252 DPAK

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. TO252 (DPAK)

TO252 DPAK

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. TO252 (DPAK)

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DMTH6010LK3

60V 175°C N-Channel Enhancement Mode MOSFET

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Low RDS(ON) – Ensures On-State Losses are Minimized
  • Excellent Qgd x RDS(ON) Product (FOM)
  • Advanced Technology for DC-DC Converters
  • Small Form Factor Thermally Efficient Package Enables Higher Density End Products

Application(s)

  • Power Management Functions
  • DC-DC Converters
  • Backlighting

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP) Standard
AEC Qualified Yes
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 60 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 14.8 A
|IDS| @TC = +25°C (A) 70 A
PD @TA = +25°C (W) 3.1 W
PD @TC = +25°C (W) 60 W
RDS(ON)Max@ VGS(10V)  (mΩ) 8 mΩ
RDS(ON)Max@ VGS(4.5V)  (mΩ) 12 mΩ
|VGS(TH)| Max (V) 3 V
QG Typ @ |VGS| = 4.5V (nC) 19.3 nC
QG Typ @ |VGS| = 10V (nC) 41.3 nC
CISS Typ (pF) 2090 pF
CISS Condition @|VDS| (V) 30 V

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Purchase & Availablity