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DMTH6010LK3

60V 175°C N-Channel Enhancement Mode MOSFET

Datasheet

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Description

This new generation MOSFET is designed to minimize the on-state resistance (R_DS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

Low R_DS(ON) – Ensures On-State Losses are Minimized
Excellent Q_gd x R_DS(ON) Product (FOM)
Advanced Technology for DC-DC Converters
Small Form Factor Thermally Efficient Package Enables Higher Density End Products

Application(s)

Power Management Functions
DC-DC Converters
Backlighting

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)	Standard
AEC Qualified	Yes
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	60 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	14.8 A
\|I_DS\| @T_C = +25°C (A)	70 A
P_D @T_A = +25°C (W)	3.1 W
P_D @T_C = +25°C (W)	60 W
R_DS(ON)Max@ V_GS(10V) (mΩ)	8 mΩ
R_DS(ON)Max@ V_GS(4.5V) (mΩ)	12 mΩ
\|V_GS(TH)\| Max (V)	3 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	19.3 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	41.3 nC
C_ISS Typ (pF)	2090 pF
C_ISS Condition @\|V_DS\| (V)	30 V

Technical Documents

SPICE Model

DMTH6010LK3.spice.txt

Recommended Soldering Techniques

TN1.pdf