Diodes Incorporated
TO252 DPAK

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DMTH6009LK3Q

60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance. This device is ideal for use in notebook battery power management and loadswitch.

Feature(s)

  • Rated to +175°C – Ideal for High Ambient Temperature Environments
  • Low RDS(ON) – Ensures On-State Losses Are Minimized
  • Excellent Qgd x RDS(ON) Product (FOM)
  • Advanced Technology for DC/DC Converters
  • Small Form Factor Thermally Efficient Package Enables Higher Density End Products

Application(s)

  • Power management functions
  • DC-DC Converters
  • Backlighting
  • Automotive

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 60 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 14.2
PD @TA = +25°C (W) 3.2
RDS(ON)Max@ VGS(10V)(mΩ) 10 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 12.8 mΩ
|VGS(TH)| Max (V) 2 V
QG Typ @ |VGS| = 4.5V (nC) 15.6 nC
QG Typ @ |VGS| = 10V (nC) 33.5 nC
CISS Typ (pF) 1925 pF
CISS Condition @|VDS| (V) 30 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf