DMTH6004SCTBQ

60V 175°C N-Channel Enhancement Mode MOSFET

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Description

This MOSFET has been designed to meet the stringent requirements of Automotive applications. It is qualified to AECQ101, supported by a PPAP.

Rated to 175°C – Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application
Low R_DS(ON) – Minimizes Power Losses
Low Q_g – Minimizes Switching Losses

Compliance (Only Automotive Supports PPAP)	Automotive
AEC Qualified	Yes
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	60 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_C = +25°C (A)	100 A
P_D @T_A = +25°C (W)	4.7 W
P_D @T_C = +25°C (W)	136 W
R_DS(ON)Max@ V_GS(10V) (mΩ)	3.4 mΩ
\|V_GS(TH)\| Max (V)	4 V
Q_G Typ @ \|V_GS\| = 10V (nC)	95.4 nC
C_ISS Typ (pF)	4556 pF
C_ISS Condition @\|V_DS\| (V)	30 V

SPICE Model

DMTH6004SCTBQ.spice.txt

Recommended Soldering Techniques

TN1.pdf