40V +175°C N-Channel Enhancement Mode MOSFET PowerDI5060-8
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This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.
Compliance (Only Automotive Supports PPAP) | Automotive |
---|---|
AEC Qualified | Yes |
Polarity | N |
ESD Diodes (Y|N) | No |
|VDS| (V) | 40 V |
|VGS| (±V) | 20 ±V |
|IDS| @TC = +25°C (A) | 73 A |
PD @TA = +25°C (W) | 3.3 W |
PD @TC = +25°C (W) | 68 W |
RDS(ON)Max@ VGS(10V) (mΩ) | 7.5 mΩ |
|VGS(TH)| Max (V) | 4 V |
QG Typ @ |VGS| = 10V (nC) | 12.1 nC |
CISS Typ (pF) | 897 pF |
CISS Condition @|VDS| (V) | 20 V |