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DMTH15H017SPS

150V 175°C N-Channel Enhancement Mode MOSFET

Datasheet

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Description

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize (R_DS(ON)), yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switch.

Feature(s)

Rated to +175°C – Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching (UIS) Test in Production
Thermally Efficient Package-Cooler Running Applications
High Conversion Efficiency

Application(s)

Motor Control
DC-DC Converters
Power Management

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)	Standard
AEC Qualified	Yes
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	150 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	11 A
\|I_DS\| @T_C = +25°C (A)	61 A
P_D @T_A = +25°C (W)	3.2 W
P_D @T_C = +25°C (W)	107 W
R_DS(ON)Max@ V_GS(10V) (mΩ)	19 mΩ
\|V_GS(TH)\| Max (V)	4 V
Q_G Typ @ \|V_GS\| = 10V (nC)	34 nC
C_ISS Typ (pF)	2344 pF
C_ISS Condition @\|V_DS\| (V)	75 V

Technical Documents

SPICE Model

DMTH15H017SPS.spice.txt

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

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Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2495	2021-03-31	2021-07-01	Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process Source for Select Discrete Products