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DMTH10H4M6SPSW

100V +175°C N-Channel Enhancement Mode MOSFET

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Description

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switches.

Feature(s)

  • 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
  • High Conversion Efficiency
  • Low RDS(ON) – Minimizes On-State Losses
  • Low Input Capacitance
  • Fast Switching Speed
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • An automotive-compliant part is available under a separate datasheet (DMTH10H4M6SPSWQ)

Application(s)

  • Motor control
  • DC-DC converters
  • Power management

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)

Standard

AEC Qualified

Yes

Polarity

N

ESD Diodes (Y|N)

No

|VDS| (V)

100 V

|VGS| (±V)

20 ±V

|IDS| @TA = +25°C (A)

21 A

|IDS| @TC = +25°C (A)

115 A

PD @TA = +25°C (W)

4.7 W

PD @TC = +25°C (W)

136 W

RDS(ON)Max@ VGS(10V)  (mΩ)

4.9 mΩ

|VGS(TH)| Min (V)

2 V

|VGS(TH)| Max (V)

4 V

QG Typ @ |VGS| = 10V (nC)

66 nC

CISS Typ (pF)

4327 pF

CISS Condition @|VDS| (V)

50 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

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