100V 175°C Dual Channel Enhancement Mode MOSFET PowerDI5060-8
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This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management
applications.
Compliance (Only Automotive Supports PPAP) |
Standard |
|---|---|
AEC Qualified |
No |
Polarity |
N+N |
ESD Diodes (Y|N) |
No |
|VDS| (V) |
100 V |
|VGS| (±V) |
20 ±V |
|IDS| @TC = +25°C (A) |
24 A |
PD @TA = +25°C (W) |
3 W |
PD @TC = +25°C (W) |
37 W |
RDS(ON)Max@ VGS(10V) (mΩ) |
32 mΩ |
RDS(ON)Max@ VGS(4.5V) (mΩ) |
50 mΩ |
|VGS(TH)| Min (V) |
1.3 V |
|VGS(TH)| Max (V) |
2.5 V |
QG Typ @ |VGS| = 4.5V (nC) |
6.3 nC |
QG Typ @ |VGS| = 10V (nC) |
11.9 nC |
CISS Typ (pF) |
683 pF |
CISS Condition @|VDS| (V) |
50 V |
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