Diodes Incorporated
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DMTH10H032LPDW

100V 175°C DUAL CHANNEL ENHANCEMENT MODE MOSFET
PowerDI5060-8

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Description

This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management
applications.

Feature(s)

  • Rated to +175°C – Ideal for High Ambient Temperature
    Environments
  • 100% Unclamped Inductive Switching (UIS) Test in Production –
    Ensures More Reliable and Robust End Application
  • Low Input Capacitance
  • Fast Switching Speed
  • Wettable Flank for Improved Optical Inspection
  • Additional Tin-plated on Sidewall Pads for Optical Solder Inspection
  •  Lead-Free Finish; RoHS Compliant
  • Halogen and Antimony Free. “Green” Device
  • For automotive applications requiring specific change control
    (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and
    manufactured in IATF 16949 certified facilities), please
    contact us or your local Diodes representative.
    https://www.diodes.com/quality/product-definitions/

Application(s)

  • DC-DC converters
  • Motors

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N+N
ESD Diodes (Y|N) No
|VDS| (V) 100 V
|VGS| (±V) 20 ±V
|IDS| @TC = +25°C (A) 24
PD @TA = +25°C (W) 3
PD @TC = +25°C (W) 37
RDS(ON)Max@ VGS(10V)(mΩ) 32 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 50 mΩ
|VGS(TH)| Min (V) 1.3 V
|VGS(TH)| Max (V) 2.5 V
QG Typ @ |VGS| = 4.5V (nC) 6.3 nC
QG Typ @ |VGS| = 10V (nC) 11.9 nC
CISS Typ (pF) 683 pF
CISS Condition @|VDS| (V) 50 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf