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DMT6015LSS

N CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed

Application(s)

  • Load Switch
  • Adaptor Switch
  • Notebook PC

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) Yes
|VDS| (V) 60 V
|VGS| (±V) 16 ±V
|IDS| @TA = +25°C (A) 9.2 A
PD @TA = +25°C (W) 2.1 W
RDS(ON)Max @ VGS(10V)(mΩ) 16 mΩ
RDS(ON)Max @ VGS(4.5V)(mΩ) 21 mΩ
|VGS(TH)| Max (V) 2.5 V
QG Typ @ |VGS| = 4.5V (nC) 8.9 nC
QG Typ @ |VGS| = 10V (nC) 18.9 nC
CISS Typ (pF) 1103 pF
CISS Condition @|VDS| (V) 30 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Orderable Part Number Buy from Distributor / Contact Sales Request Samples
DMT6015LSS-13

DMT6015LSS-13

Authorized Distributor Quantity Inventory Date Countries/Regions Buy Online
Arrow/Components Agent Ltd. 22500 6/27/2022 Hong Kong Contact Sales
Request Sample

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
Source for Select Discrete Products