Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. U-DFN2020-6 (Type F)
NRND = Not Recommended for New Design
50V N-CHANNEL ENHANCEMENT MODE MOSFET
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This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
CISS Condition @|VDS| (V) |
25 |
|---|---|
CISS Typ (pF) |
902.7 |
ESD Diodes (Y|N) |
No |
Polarity |
N |
QG Typ @ |VGS| = 10V (nC) |
14 |
QG Typ @ |VGS| = 4.5V (nC) |
6.1 |
AEC Qualified |
Yes |
RDS(ON)Max@ VGS(10V) (mΩ) |
15 |
RDS(ON)Max@ VGS(4.5V) (mΩ) |
23 |
|VDS| (V) |
50 |
|VGS| (±V) |
16 |
|VGS(TH)| Max (V) |
2 |
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A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2770 | 2025-10-30 | 2025-10-30 | Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products |
| PCN-2690 | 2024-05-29 | 2024-08-29 | Qualification of Diodes’ subcontractor Eris Technology Corporation (Eris) in Taoyuan, Taiwan as Additional Assembly & Test Site and Diodes internal JKFAB in HsinChu, Taiwan as additional wafer source for Select Discrete Products. |
| PCN-2607 | 2023-02-22 | 2023-08-22 | Device End of Life (EOL) |
| PCN-2495 | 2021-03-31 | 2021-07-01 | Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process Source for Select Discrete Products |
