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DMPH6050SSD

175°C 60V DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

  • Rated to +175°C – ideal for high ambient temperature environments
  • 100% Unclamped Inductive Switching – ensures more reliable and robust end application
  • Low RDS(ON) – minimises power losses
  • Low Qg – minimises switching losses

Application(s)

  • Engine Management Systems
  • Body Control Electronics
  • DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity P+P
ESD Diodes (Y|N) No
|VDS| (V) 60 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 5.2 A
PD @TA = +25°C (W) 2 W
RDS(ON)Max @ VGS(10V)(mΩ) 48 mΩ
RDS(ON)Max @ VGS(4.5V)(mΩ) 60 mΩ
|VGS(TH)| Max (V) 3 V
QG Typ @ |VGS| = 4.5V (nC) 14.5 nC
QG Typ @ |VGS| = 10V (nC) 30.6 nC
CISS Typ (pF) 1525 pF
CISS Condition @|VDS| (V) 30 V

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
Source for Select Discrete Products
PCN-2485 2020-12-04 2021-03-04 Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly & Test Site Using PdCu or Au Bond Wire, And Qualification of Additional Wafer Source for Select Discrete Automotive Products

FAQs

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