175°C 60V Dual P-Channel Enhancement Mode MOSFET
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This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
Compliance (Only Automotive Supports PPAP) | Standard |
---|---|
AEC Qualified | No |
Polarity | P+P |
ESD Diodes (Y|N) | No |
|VDS| (V) | 60 V |
|VGS| (±V) | 20 ±V |
RDS(ON)Max@ VGS(10V) (mΩ) | 48 mΩ |
RDS(ON)Max@ VGS(4.5V) (mΩ) | 60 mΩ |
RDS(ON)Max@ VGS(2.5V) (mΩ) | - mΩ |
RDS(ON)Max@ VGS(1.8V) (mΩ) | - mΩ |
|VGS(TH)| Min (V) | 1 V |
|VGS(TH)| Max (V) | 3 V |
QG Typ @ |VGS| = 4.5V (nC) | 14.5 nC |
QG Typ @ |VGS| = 10V (nC) | 30.6 nC |
CISS Typ (pF) | 1525 pF |
CISS Condition @|VDS| (V) | 30 V |