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DMPH6050SPDW

175°C 60V Dual P-Channel Enhancement Mode MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (R_DS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Feature(s)

Rated to +175°C – Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application
Low R_DS(ON)– Minimizes Power Losses
Low Q_g – Minimizes Switching Losses
Wettable Flank for Improved Optical Inspections
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/
An automotive-compliant part is available under separate datasheet (DMPH6050SPDWQ)

Application(s)

Engine management systems
Body control electronics
DC-DC converters

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)	Standard
AEC Qualified	No
Polarity	P+P
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	60 V
\|V_GS\| (±V)	20 ±V
R_DS(ON)Max@ V_GS(10V) (mΩ)	48 mΩ
R_DS(ON)Max@ V_GS(4.5V) (mΩ)	60 mΩ
R_DS(ON)Max@ V_GS(2.5V) (mΩ)	- mΩ
R_DS(ON)Max@ V_GS(1.8V) (mΩ)	- mΩ
\|V_GS(TH)\| Min (V)	1 V
\|V_GS(TH)\| Max (V)	3 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	14.5 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	30.6 nC
C_ISS Typ (pF)	1525 pF
C_ISS Condition @\|V_DS\| (V)	30 V

Technical Documents

SPICE Model

DMPH6050SPDW.spice.txt

Recommended Soldering Techniques

TN1.pdf