Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. PowerDI3333-8
Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. PowerDI3333-8
Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. PowerDI3333-8
40V P-Channel Enhancement Mode MOSFET
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This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
| Compliance (Only Automotive Supports PPAP) | Automotive |
|---|---|
| AEC Qualified | Yes |
| Polarity | P |
| ESD Diodes (Y|N) | No |
| |VDS| (V) | 40 V |
| |VGS| (±V) | 20 ±V |
| |IDS| @TA = +25°C (A) | 7.2 A |
| PD @TA = +25°C (W) | 1.95 W |
| RDS(ON)Max@ VGS(10V) (mΩ) | 25 mΩ |
| RDS(ON)Max@ VGS(4.5V) (mΩ) | 45 mΩ |
| RDS(ON)Max@ VGS(2.5V) (mΩ) | N/A mΩ |
| RDS(ON)Max@ VGS(1.8V) (mΩ) | N/A mΩ |
| |VGS(TH)| Max (V) | 1.8 V |
| QG Typ @ |VGS| = 4.5V (nC) | 14 nC |
| QG Typ @ |VGS| = 10V (nC) | 20 nC |
| CISS Condition @|VDS| (V) | 1643 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2522 | 2021-08-24 | 2021-11-24 | Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly/Test Site Using PdCu or Cu Bond Wire with Standardization of Assembly Bill of Materials for Select Automotive Products |
