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DMP32M6SPS

30V P-Channel Enhancement Mode MOSFET

Datasheet

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Description

This new generation MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switch.

Feature(s)

100% Unclamped Inductive Switch (UIS) Test in Production
Thermally Efficient Package-Cooler Running Applications
High Conversion Efficiency
Low RDS(ON) – Minimizes On State Losses
<1.1mm Package Profile – Ideal for Thin Applications

Application(s)

Switch

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)	Standard
AEC Qualified	No
Polarity	P
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	30 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_C = +25°C (A)	100 A
P_D @T_A = +25°C (W)	2.3 W
R_DS(ON)Max@ V_GS(10V) (mΩ)	2.6 mΩ
R_DS(ON)Max@ V_GS(4.5V) (mΩ)	3.75 mΩ
\|V_GS(TH)\| Max (V)	2.5 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	75 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	158 nC
C_ISS Typ (pF)	8594 pF
C_ISS Condition @\|V_DS\| (V)	15 V

Technical Documents

SPICE Model

DMP32M6SPS.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile

Purchase & Availablity

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2628	2023-05-11	2023-08-11	Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source for Select Discrete Products
PCN-2601	2022-10-28	2023-01-28	Additional Wafer Source for Select Discrete Products