Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. PowerDI5060-8
30V P-Channel Enhancement Mode MOSFET
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This new generation MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switch.
| Compliance (Only Automotive Supports PPAP) | Standard |
|---|---|
| AEC Qualified | No |
| Polarity | P |
| ESD Diodes (Y|N) | No |
| |VDS| (V) | 30 V |
| |VGS| (±V) | 20 ±V |
| |IDS| @TC = +25°C (A) | 100 A |
| PD @TA = +25°C (W) | 2.3 W |
| RDS(ON)Max@ VGS(10V) (mΩ) | 2.6 mΩ |
| RDS(ON)Max@ VGS(4.5V) (mΩ) | 3.75 mΩ |
| |VGS(TH)| Max (V) | 2.5 V |
| QG Typ @ |VGS| = 4.5V (nC) | 75 nC |
| QG Typ @ |VGS| = 10V (nC) | 158 nC |
| CISS Typ (pF) | 8594 pF |
| CISS Condition @|VDS| (V) | 15 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2628 | 2023-05-11 | 2023-08-11 | Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source for Select Discrete Products |
| PCN-2601 | 2022-10-28 | 2023-01-28 | Additional Wafer Source for Select Discrete Products |
