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DMP3165SVT

DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)

Application(s)

  • Backlighting
  • DC-DC Converters
  • Power Management Functions

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive supports PPAP) Standard
Polarity P+P
ESD Diodes (Y|N) No
|VDS| (V) 30 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 2.7 A
PD @TA = +25°C (W) 1.08 W
RDS(ON)Max @ VGS(10V)(mΩ) 95 mΩ
RDS(ON)Max @ VGS(4.5V)(mΩ) 140 mΩ
|VGS(TH)| Max (V) 2.2 V
CISS Typ (pF) 287 pF
QG Typ @ |VGS| = 4.5V (nC) 3.5
QG Typ @ |VGS| = 10V (nC) 6.8

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2561 2022-02-17 2022-08-17 Device End of Life (EOL)

FAQs

Related Application FAQs