Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SO-8
Dual P-Channel Enhancement Mode MOSFET
Contact Sales
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
This new generation 30V P channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to battery Load switching.
Compliance (Only Automotive Supports PPAP) |
Standard |
|---|---|
AEC Qualified |
Yes |
Polarity |
P+P |
ESD Diodes (Y|N) |
No |
|VDS| (V) |
30 V |
|VGS| (±V) |
20 ±V |
|IDS| @TA = +25°C (A) |
6 A |
PD @TA = +25°C (W) |
1.7 W |
RDS(ON)Max@ VGS(10V) (mΩ) |
25 mΩ |
RDS(ON)Max@ VGS(4.5V) (mΩ) |
38 mΩ |
|VGS(TH)| Max (V) |
3 V |
QG Typ @ |VGS| = 4.5V (nC) |
10.9 nC |
QG Typ @ |VGS| = 10V (nC) |
22 nC |
CISS Typ (pF) |
1241 pF |
Something went wrong with your request. Please try again later. If this problem continues, please contact Diodes support for assistance.
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2770 | 2025-10-30 | 2025-10-30 | Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products |
