Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.
PowerDI5060-8.pngNRND = Not Recommended for New Design
P-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation 30V P channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally use Notebook battery power management and loadswitch.
| Compliance (Only Automotive supports PPAP) | DMP3010LPSQ |
|---|---|
| CISS Condition @|VDS| (V) | N/A |
| CISS Typ (pF) | N/A |
| ESD Diodes (Y|N) | No |
| |IDS| @TA = +25°C (A) | 36 |
| PD @TA = +25°C (W) | 2.18 |
| Polarity | P |
| QG Typ @ |VGS| = 10V (nC) | 126.2 |
| QG Typ @ |VGS| = 4.5V (nC) | 59.2 |
| AEC Qualified | Yes |
| RDS(ON)Max@ VGS(1.8V)(mΩ) | N/A |
| RDS(ON)Max@ VGS(10V)(mΩ) | 7.5 |
| RDS(ON)Max@ VGS(2.5V)(mΩ) | N/A |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 10 |
| |VDS| (V) | 30 |
| |VGS| (±V) | 20 |
| |VGS(TH)| Max (V) | N/A |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2439 | 2019-12-05 | 2020-03-05 | Qualification of "Diodes Technology (Cheng Du) Company Limited" (CAT) as an Additional Assembly & Test Site, Using Gold Bond Wire, and as an Additional Wafer Back Grinding and Back Metal Process Source on Select MOSFET Products |
| PCN-2389 | 2019-02-05 | 2019-08-05 | Device End of Life |
