Diodes Incorporated — Analog and discrete power solutions
PowerDI5060 8

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. PowerDI5060-8

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DMP3010LPS (NRND)

NRND = Not Recommended for New Design

P-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation 30V P channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally use Notebook battery power management and loadswitch.

Application(s)

  • Notebook battery
  • Power management
  • Loadswitch

Specifications & Technical Documents

Product Parameters

CISS Condition @|VDS| (V) N/A
CISS Typ (pF) N/A
ESD Diodes (Y|N) No
Polarity P
QG Typ @ |VGS| = 10V (nC) 126.2
QG Typ @ |VGS| = 4.5V (nC) 59.2
AEC Qualified Yes
RDS(ON)Max@ VGS(1.8V)  (mΩ) N/A
RDS(ON)Max@ VGS(10V)  (mΩ) 7.5
RDS(ON)Max@ VGS(2.5V)  (mΩ) N/A
RDS(ON)Max@ VGS(4.5V)  (mΩ) 10
|VDS| (V) 30
|VGS| (±V) 20
|VGS(TH)| Max (V) N/A

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Purchase & Availablity