Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SOT23
Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SOT23
Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SOT23
NRND = Not Recommended for New Design
P-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation 20V P-Channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to handheld applications.
| CISS Condition @|VDS| (V) | 10 |
|---|---|
| CISS Typ (pF) | 443 |
| ESD Diodes (Y|N) | No |
| Polarity | P |
| QG Typ @ |VGS| = 10V (nC) | N/A |
| QG Typ @ |VGS| = 4.5V (nC) | 6 |
| AEC Qualified | No |
| RDS(ON)Max@ VGS(1.8V) (mΩ) | N/A |
| RDS(ON)Max@ VGS(10V) (mΩ) | N/A |
| RDS(ON)Max@ VGS(2.5V) (mΩ) | 110 |
| RDS(ON)Max@ VGS(4.5V) (mΩ) | 80 |
| |VDS| (V) | 20 |
| |VGS| (±V) | 10 |
| |VGS(TH)| Max (V) | 1 |
| |VGS(TH)| Min (V) | 0.45 |
