P-Channel Enhancement Mode MOSFET
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This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal
for high-efficiency power management applications.
Compliance (Only Automotive Supports PPAP) |
Standard |
---|---|
AEC Qualified |
No |
Polarity |
P |
ESD Diodes (Y|N) |
Yes |
|VDS| (V) |
20 V |
|VGS| (±V) |
8 ±V |
|IDS| @TC = +25°C (A) |
4.6 A |
PD @TA = +25°C (W) |
1.4 W |
RDS(ON)Max@ VGS(4.5V) (mΩ) |
44 mΩ |
RDS(ON)Max@ VGS(2.5V) (mΩ) |
57 mΩ |
|VGS(TH)| Max (V) |
0.95 V |
QG Typ @ |VGS| = 4.5V (nC) |
8.2 nC |
QG Typ @ |VGS| = 10V (nC) |
17.8 (@8V) nC |
CISS Typ (pF) |
118 pF |
CISS Condition @|VDS| (V) |
10 V |
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