60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switches.
AEC Qualified | Yes |
---|---|
Compliance (Only Automotive(Q) supports PPAP) | Standard |
Polarity | N |
ESD Diodes (Y|N) | No |
|VDS| (V) | 60 V |
|VGS| (±V) | 20 ±V |
|IDS| @TA = +25°C (A) | 16.5 |
|IDS| @TC = +25°C (A) | 88 |
PD @TA = +25°C (W) | 3.3 |
RDS(ON)Max@ VGS(10V)(mΩ) | 8 mΩ |
|VGS(TH)| Max (V) | 4 V |
QG Typ @ |VGS| = 4.5V (nC) | 21.2 nC |
QG Typ @ |VGS| = 10V (nC) | 40.1 nC |
CISS Typ (pF) | 2594 pF |
CISS Condition @|VDS| (V) | 30 V |