60V 175°C N-Channel Enhancement Mode MOSFET
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This new generation N-Channel enhancement mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in notebook battery power managements and load switches.
Compliance (Only Automotive Supports PPAP) | Standard |
---|---|
AEC Qualified | Yes |
Polarity | N |
ESD Diodes (Y|N) | No |
|VDS| (V) | 60 V |
|VGS| (±V) | 20 ±V |
|IDS| @TA = +25°C (A) | 16.5 A |
|IDS| @TC = +25°C (A) | 88 A |
PD @TA = +25°C (W) | 3.3 W |
RDS(ON)Max@ VGS(10V) (mΩ) | 8 mΩ |
|VGS(TH)| Max (V) | 4 V |
QG Typ @ |VGS| = 4.5V (nC) | 21.2 nC |
QG Typ @ |VGS| = 10V (nC) | 40.1 nC |
CISS Typ (pF) | 2594 pF |
CISS Condition @|VDS| (V) | 30 V |