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40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
|Compliance (Only Automotive supports PPAP)||Standard|
|CISS Condition @|VDS| (V)||20|
|CISS Typ (pF)||1405|
|Compliance (Only Automotive(Q) supports PPAP)||Standard|
|ESD Diodes (Y|N)||No|
||IDS| @TC = +25°C (A)||50|
|PD @TA = +25°C (W)||2.6|
|PD @TC = +25°C (W)||50|
|QG Typ @ |VGS| = 10V (nC)||25.5|
|RDS(ON)Max @ VGS(10V)(mΩ)||10|
||VGS(TH)| Max (V)||4|