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DMN65D7LFR4

N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected up to 2kV
Totally Lead-Free & Fully RoHS Compliant
Halogen and Antimony Free. “Green” Device
For automotive applications requiring specific change
control (i.e. parts qualified to AEC-Q100/101/200, PPAP
capable, and manufactured in IATF 16949 certified facilities),
please contact us or your local Diodes representative.
https://www.diodes.com/quality/product-definitions/

Application(s)

Load switches

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	Yes
\|V_DS\| (V)	60 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	0.26 A
\|I_DS\| @T_C = +25°C (A)	0.7 A
R_DS(ON)Max@ V_GS(10V)(mΩ)	5000 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	5300 mΩ
\|V_GS(TH)\| Min (V)	1 V
\|V_GS(TH)\| Max (V)	2.5 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	0.51 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	1.04 nC
C_ISS Typ (pF)	41 pF
C_ISS Condition @\|V_DS\| (V)	30 V

Technical Documents

SPICE Model

DMN65D7LFR4.spice.txt

Recommended Soldering Techniques

TN1.pdf