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DMN62D0UWQ (NRND)

NRND = Not Recommended for New Design

Alternative Part: DMN62D2UWQ,

N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP.

Feature(s)

  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • 100% Rg Test in Production
  • ESD Protected Gate

Application(s)

  • Motor Control
  • Power Management Functions
  • Backlighting

Specifications & Technical Documents

Product Parameters

CISS Condition @|VDS| (V)

30

CISS Typ (pF)

32

ESD Diodes (Y|N)

Yes

Polarity

N

QG Typ @ |VGS| = 4.5V (nC)

0.5

AEC Qualified

Yes

RDS(ON)Max@ VGS(1.8V)  (mΩ)

3000

RDS(ON)Max@ VGS(2.5V)  (mΩ)

2500

RDS(ON)Max@ VGS(4.5V)  (mΩ)

2000

|VDS| (V)

60

|VGS| (±V)

20

|VGS(TH)| Max (V)

1

Related Content

Packages

Technical Documents

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Purchase & Availability

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Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2770 2025-10-30 2025-10-30 Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products