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DMN62D0LFD

N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This new generation 60V N channel enhancement mode MOSFET has been designed to minimise R_DS(ON) and yet maintain superior switching performance. This device is ideally suited to portable , Battery packing and other power management functions.

Application(s)

DC-DC Converters
Power management functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	Yes
\|V_DS\| (V)	60 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	0.31 A
P_D @T_A = +25°C (W)	0.48 W
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	2000 (@4V) mΩ
R_DS(ON)Max@ V_GS(2.5V)(mΩ)	2500 mΩ
R_DS(ON)Max@ V_GS(1.8V)(mΩ)	3000 mΩ
\|V_GS(TH)\| Max (V)	1 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	0.5 nC
C_ISS Typ (pF)	31 pF
C_ISS Condition @\|V_DS\| (V)	25 V

Technical Documents

SPICE Model

DMN62D0LFD.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2389	2019-02-05	2019-08-05	Device End of Life
PCN-2340	2018-04-26	2018-05-26	Qualification of Alternate Wafer Sources for Select MOSFET Products