N-Channel Enhancement Mode MOSFET
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This new generation 60V N channel enhancement mode MOSFET has been designed to minimise RDS(ON) and yet maintain superior switching performance. This device is ideally suited to portable , Battery packing and other power management functions.
| Compliance (Only Automotive Supports PPAP) | Standard |
|---|---|
| AEC Qualified | No |
| Polarity | N |
| ESD Diodes (Y|N) | Yes |
| |VDS| (V) | 60 V |
| |VGS| (±V) | 20 ±V |
| |IDS| @TA = +25°C (A) | 0.31 A |
| PD @TA = +25°C (W) | 0.48 W |
| RDS(ON)Max@ VGS(4.5V) (mΩ) | 2000 (@4V) mΩ |
| RDS(ON)Max@ VGS(2.5V) (mΩ) | 2500 mΩ |
| RDS(ON)Max@ VGS(1.8V) (mΩ) | 3000 mΩ |
| |VGS(TH)| Max (V) | 1 V |
| QG Typ @ |VGS| = 4.5V (nC) | 0.5 nC |
| CISS Typ (pF) | 31 pF |
| CISS Condition @|VDS| (V) | 25 V |
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