DMN61D9UWQ (NRND)

NRND = Not Recommended for New Design

Alternative Part: DMN62D2UWQ,

N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Up To 2kV

Application(s)

Motor Control
Power Management Functions
Backlighting

Specifications & Technical Documents

Product Parameters

C_ISS Condition @\|V_DS\| (V)	30
C_ISS Typ (pF)	28.5
Configuration	Single
ESD Diodes (Y\|N)	Yes
Polarity	N
Q_G Typ @ \|V_GS\| = 4.5V (nC)	0.4
AEC Qualified	Yes
R_DS(ON)Max@ V_GS(1.8V) (mΩ)	3500
R_DS(ON)Max@ V_GS(2.5V) (mΩ)	2500
R_DS(ON)Max@ V_GS(4.5V) (mΩ)	2000 (@5V)
\|V_DS\| (V)	60
\|V_GS\| (±V)	20
\|V_GS(TH)\| Max (V)	1

Technical Documents

SPICE Model

DMN61D9UWQ.spice.txt

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2485	2020-12-04	2021-03-04	Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly & Test Site Using PdCu or Au Bond Wire, And Qualification of Additional Wafer Source for Select Discrete Automotive Products