NRND = Not Recommended for New Design
N-CHANNEL ENHANCEMENT MODE MOSFET
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This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
| Compliance (Only Automotive supports PPAP) | Automotive |
|---|---|
| CISS Condition @|VDS| (V) | 30 |
| CISS Typ (pF) | 28.5 |
| Compliance (Only Automotive(Q) supports PPAP) | Automotive |
| Configuration | Single |
| ESD Diodes (Y|N) | Yes |
| |IDS| @TA = +25°C (A) | 0.34 |
| PD @TA = +25°C (W) | 0.44 |
| Polarity | N |
| Compliance (Only Automotive supports PPAP) | Automotive (Q) |
| QG Typ @ |VGS| = 4.5V (nC) | 0.4 |
| AEC Qualified | Yes |
| RDS(ON)Max@ VGS(1.8V)(mΩ) | 3500 |
| RDS(ON)Max@ VGS(2.5V)(mΩ) | 2500 |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 2000 (@5V) |
| |VDS| (V) | 60 |
| |VGS| (±V) | 20 |
| |VGS(TH)| Max (V) | 1 |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2485 | 2020-12-04 | 2021-03-04 | Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly & Test Site Using PdCu or Au Bond Wire, And Qualification of Additional Wafer Source for Select Discrete Automotive Products |
