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60V N-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
|Compliance (Only Automotive(Q) supports PPAP)||Standard|
|ESD Diodes (Y|N)||No|
||VDS| (V)||60 V|
||VGS| (±V)||20 ±V|
||IDS| @TA = +25°C (A)||6 A|
|PD @TA = +25°C (W)||4.12 W|
|RDS(ON)Max @ VGS(10V)(mΩ)||68 mΩ|
|RDS(ON)Max @ VGS(4.5V)(mΩ)||100 mΩ|
||VGS(TH)| Max (V)||3 V|
|QG Typ @ |VGS| = 4.5V (nC)||5.55 nC|
|QG Typ @ |VGS| = 10V (nC)||10.3 nC|
|CISS Typ (pF)||502 pF|