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DMN6022SSS

N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

  • 100% Unclamped Inductive Switch (UIS) Test in Production
  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed

Application(s)

  • Backlighting
  • Power Management Functions
  • DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No Y/N
|VDS| (V) 60 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 6.9 A
PD @TA = +25°C (W) 2.1 W
RDS(ON)Max @ VGS(10V)(mΩ) 29 mΩ
|VGS(TH)| Max (V) 3 V
CISS Typ (pF) 2110 pF
CISS Condition @|VDS| (V) 30 V
QG Typ @ |VGS| = 4.5V (nC) 32 nC
QG Typ @ |VGS| = 10V (nC) 14

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Orderable Part Number Buy from Distributor / Contact Sales Request Samples
DMN6022SSS-13

DMN6022SSS-13

Authorized Distributor Quantity Inventory Date Countries/Regions Buy Online
RS Components - Spain 2200 6/27/2022 Spain Contact Sales
RS Components - UK 2200 6/27/2022 England Buy Now
Request Sample