30V N-Channel Enhancement Mode MOSFET
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This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
AEC Qualified | No |
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Compliance (Only Automotive(Q) supports PPAP) | Standard |
Polarity | N |
ESD Diodes (Y|N) | Yes |
|VDS| (V) | 30 V |
|VGS| (±V) | 8 ±V |
|IDS| @TA = +25°C (A) | 1 |
PD @TA = +25°C (W) | 0.65 |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 460 mΩ |
RDS(ON)Max@ VGS(2.5V)(mΩ) | 560 mΩ |
RDS(ON)Max@ VGS(1.8V)(mΩ) | 730 mΩ |
|VGS(TH)| Min (V) | 0.45 V |
|VGS(TH)| Max (V) | 0.95 V |
QG Typ @ |VGS| = 4.5V (nC) | 0.9 nC |
CISS Typ (pF) | 40.8 pF |
CISS Condition @|VDS| (V) | 25 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2690 | 2024-05-29 | 2024-08-29 | Qualification of Diodes’ subcontractor Eris Technology Corporation (Eris) in Taoyuan, Taiwan as Additional Assembly & Test Site and Diodes internal JKFAB in HsinChu, Taiwan as additional wafer source for Select Discrete Products. |