Diodes Incorporated
SOT23

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DMN3112SQ

N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Low On-Resistance 
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Totally Lead-Free & Fully RoHS Compliant 
  • Halogen and Antimony Free. “Green” Device
  • The DMN3112SQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Application(s)

  • General Purpose Interfacing Switch
  • Power Management Functions
  • Boost Application
  • Analog Switch

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 30 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 5.8
PD @TA = +25°C (W) 1.4
RDS(ON)Max@ VGS(10V)(mΩ) 57 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 112 mΩ
|VGS(TH)| Max (V) 2.2 V
CISS Typ (pF) 268 pF
CISS Condition @|VDS| (V) 5 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC