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DMN3112SQ

N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant
Halogen and Antimony Free. “Green” Device
The DMN3112SQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Application(s)

General Purpose Interfacing Switch
Power Management Functions
Boost Application
Analog Switch

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Automotive
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	30 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	5.8 A
P_D @T_A = +25°C (W)	1.4 W
R_DS(ON)Max@ V_GS(10V)(mΩ)	57 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	112 mΩ
\|V_GS(TH)\| Max (V)	2.2 V
C_ISS Typ (pF)	268 pF
C_ISS Condition @\|V_DS\| (V)	5 V

Technical Documents

SPICE Model

DMN3112SQ.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile