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DMN3032LE

N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application(s)

  • DC Motor Control
  • DC-AC Inverters

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 30 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 5.6 A
PD @TA = +25°C (W) 1.8 W
RDS(ON)Max @ VGS(10V)(mΩ) 29 mΩ
RDS(ON)Max @ VGS(4.5V)(mΩ) 35 mΩ
|VGS(TH)| Max (V) 2 V
QG Typ @ |VGS| = 10V (nC) 11.3 nC
CISS Typ (pF) 498 pF

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Orderable Part Number Buy from Distributor / Contact Sales Request Samples
DMN3032LE-13

DMN3032LE-13

Authorized Distributor Quantity Inventory Date Countries/Regions Buy Online
Arrow Electronics Central EU 70000 9/30/2022 Europe Buy Now
RS Components - Spain 300 9/30/2022 Spain Contact Sales
RS Components - Spain 11540 9/30/2022 Spain Contact Sales
RS Components - UK 300 9/30/2022 England Buy Now
RS Components - UK 11540 9/30/2022 England Buy Now
Digi-Key Electronics 14984 9/29/2022 Europe, Asia, North America Buy Now
Future Electronics - Europe 120000 9/29/2022 England Contact Sales
Request Sample

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
Source for Select Discrete Products