Diodes Incorporated
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DMN2400UFDQ (Not Recommended for new design)

NRND = Not Recommended for New Design

20V N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power anagement applications.

Feature(s)

  • Low On-Resistance
  • Very low Gate Threshold Voltage, 1.0V Max.
  • Low Input Capacitance
  • Fast Switching Speed
  • ESD Protected Gate

Application(s)

  • Power Management Functions
  • Battery Operated Systems and Solid-State Relays
  • Load Switch
  • DRL
  • Fog Lights
  • ECU
  • Rear Cluster
  • ABS

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP) Automotive
CISS Condition @|VDS| (V) 16
CISS Typ (pF) 37
Compliance (Only Automotive(Q) supports PPAP) Automotive
Configuration Single
ESD Diodes (Y|N) Yes
|IDS| @TA = +25°C (A) 0.9
PD @TA = +25°C (W) 0.85
Polarity N
Compliance (Only Automotive supports PPAP) Automotive (Q)
QG Typ @ |VGS| = 4.5V (nC) 0.5
AEC Qualified Yes
RDS(ON)Max@ VGS(1.8V)(mΩ) 1000
RDS(ON)Max@ VGS(2.5V)(mΩ) 800
RDS(ON)Max@ VGS(4.5V)(mΩ) 600
|VDS| (V) 20
|VGS| (±V) 12
|VGS(TH)| Max (V) 1

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf