DMN2400UFDQ (NRND)

NRND = Not Recommended for New Design

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This new generation MOSFET is designed to minimize the on-state resistance (R_DS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power anagement applications.

Feature(s)

Low On-Resistance
Very low Gate Threshold Voltage, 1.0V Max.
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate

Application(s)

Power Management Functions
Battery Operated Systems and Solid-State Relays
Load Switch
DRL
Fog Lights
ECU
Rear Cluster
ABS

Specifications & Technical Documents

Product Parameters

C_ISS Condition @\|V_DS\| (V)	16
C_ISS Typ (pF)	37
Configuration	Single
ESD Diodes (Y\|N)	Yes
Polarity	N
Q_G Typ @ \|V_GS\| = 4.5V (nC)	0.5
AEC Qualified	Yes
R_DS(ON)Max@ V_GS(1.8V) (mΩ)	1000
R_DS(ON)Max@ V_GS(2.5V) (mΩ)	800
R_DS(ON)Max@ V_GS(4.5V) (mΩ)	600
\|V_DS\| (V)	20
\|V_GS\| (±V)	12
\|V_GS(TH)\| Max (V)	1

Technical Documents

SPICE Model

DMN2400UFDQ .spice.txt

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

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Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2722	2025-02-11	2025-05-12	Change Lead Frame Type from SOT-23R to SOT-23T and Qualify Additional Diodes Internal Assembly and Test Site (CAT) for Select Automotive Products