Diodes Incorporated
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DMN2013UFX

N-Channel Mosfet

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Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application(s)

  • General Purpose Interfacing Switch
  • Power Management Functions

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N+N
ESD Diodes (Y|N) Yes
|VDS| (V) 20 V
|VGS| (±V) 8 ±V
|IDS| @TA = +25°C (A) 10 A
PD @TA = +25°C (W) 2.14 W
RDS(ON)Max@ VGS(4.5V)(mΩ) 11.5 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 14 mΩ
|VGS(TH)| Min (V) 0.5 V
|VGS(TH)| Max (V) 1.1 V
QG Typ @ |VGS| = 4.5V (nC) 32.4 nC
QG Typ @ |VGS| = 10V (nC) 57.4 (@8V) nC
CISS Typ (pF) 2607 pF

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf