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PowerDI3333-8.png20V N-CHANNEL ENHANCEMENT MODE MOSFET
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This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101 and supported by a PPAP.
• Low RDS(ON)—Ensures On-State Losses are Minimized
• Small-Form Factor Thermally Efficient Package Enables Higher Density End Products
• Occupies 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product
• 100% Unclamped Inductive Switching, Test in Production—Ensures More Reliable And Robust End Application
• Motor Control
• Load Switch
• DC-DC Converters
| AEC Qualified | Yes |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Automotive |
| Polarity | N |
| ESD Diodes (Y|N) | No |
| |VDS| (V) | 20 V |
| |VGS| (±V) | 12 ±V |
| |IDS| @TA = +25°C (A) | 18 A |
| PD @TA = +25°C (W) | 2.27 W |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 4.6 mΩ |
| RDS(ON)Max@ VGS(2.5V)(mΩ) | 8.7 mΩ |
| |VGS(TH)| Min (V) | 0.4 V |
| |VGS(TH)| Max (V) | 1.2 V |
| QG Typ @ |VGS| = 4.5V (nC) | 68.8 nC |
| QG Typ @ |VGS| = 10V (nC) | 164 nC |
| CISS Typ (pF) | 6495 pF |
| CISS Condition @|VDS| (V) | 10 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2522 | 2021-08-24 | 2021-11-24 | Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly/Test Site Using PdCu or Cu Bond Wire with Standardization of Assembly Bill of Materials for Select Automotive Products |
