Dual N-Channel Enhancement Mode MOSFET
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This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Compliance (Only Automotive Supports PPAP) |
Standard |
---|---|
AEC Qualified |
No |
Polarity |
N+N |
ESD Diodes (Y|N) |
Yes |
|VDS| (V) |
100 V |
|VGS| (±V) |
20 ±V |
|IDS| @TA = +25°C (A) |
0.27 A |
PD @TA = +25°C (W) |
1 W |
RDS(ON)Max@ VGS(10V) (mΩ) |
6000 mΩ |
RDS(ON)Max@ VGS(4.5V) (mΩ) |
10000 mΩ |
|VGS(TH)| Max (V) |
2 V |
QG Typ @ |VGS| = 4.5V (nC) |
0.6 nC |
QG Typ @ |VGS| = 10V (nC) |
1.2 nC |
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A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2690 | 2024-05-29 | 2024-08-29 | Qualification of Diodes’ subcontractor Eris Technology Corporation (Eris) in Taoyuan, Taiwan as Additional Assembly & Test Site and Diodes internal JKFAB in HsinChu, Taiwan as additional wafer source for Select Discrete Products. |