Diodes Incorporated

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.

Back to Inactve Datasheet Archive

DMG6602SVT (Not Recommended for new design)

NRND = Not Recommended for New Design

Inactive Datasheet Archive

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.


This new generation 30V N +P channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to Handheld application.


  • Backlighting
  • DC-DC Converters
  • Power management functions

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP) DMG6602SVTQ
CISS Condition @|VDS| (V) 15
CISS Typ (pF) 290, 350
ESD Diodes (Y|N) No
|IDS| @TA = +25°C (A) 3.4, 2.8
PD @TA = +25°C (W) 1.112
Polarity N+P
QG Typ @ |VGS| = 10V (nC) 13, 9
QG Typ @ |VGS| = 4.5V (nC) 6
AEC Qualified Yes
RDS(ON)Max@ VGS(1.8V)(mΩ) N/A
RDS(ON)Max@ VGS(10V)(mΩ) 60, 95
RDS(ON)Max@ VGS(2.5V)(mΩ) N/A
RDS(ON)Max@ VGS(4.5V)(mΩ) 100, 140
|VDS| (V) 30
|VGS| (±V) 20
|VGS(TH)| Max (V) 2.3

Related Content


Technical Documents


Recommended Soldering Techniques