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DMG3415UFY4Q

P-Channel Enhancement Mode MOSFET

Datasheet

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Description

This new generation MOSFET is designed to minimize the on-state resistance (R_DS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Up To 3kV

Application(s)

Load Switch
DC-DC Converters
Power Management Functions

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)	Automotive
AEC Qualified	Yes
Polarity	P
ESD Diodes (Y\|N)	Yes
\|V_DS\| (V)	16 V
\|V_GS\| (±V)	8 ±V
\|I_DS\| @T_A = +25°C (A)	2.5 A
P_D @T_A = +25°C (W)	1.35 W
R_DS(ON)Max@ V_GS(10V) (mΩ)	39 mΩ
R_DS(ON)Max@ V_GS(4.5V) (mΩ)	52 mΩ
R_DS(ON)Max@ V_GS(2.5V) (mΩ)	65 mΩ
\|V_GS(TH)\| Min (V)	0.3 V
\|V_GS(TH)\| Max (V)	1 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	10 nC
C_ISS Typ (pF)	282 pF
C_ISS Condition @\|V_DS\| (V)	10 V

Technical Documents

SPICE Model

DMG3415UFY4Q.spice.txt

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2770	2025-10-30	2025-10-30	Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products