30V P-Channel Enhancement Mode MOSFET
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This new-generation small-signal enhancement-mode MOSFET features low on-resistance and fast switching, making it ideal for high-efficiency power management applications.
Compliance (Only Automotive Supports PPAP) |
Automotive |
---|---|
AEC Qualified |
Yes |
Polarity |
P |
ESD Diodes (Y|N) |
No |
|VDS| (V) |
30 V |
|VGS| (±V) |
12 ±V |
|IDS| @TA = +25°C (A) |
3.7 A |
PD @TA = +25°C (W) |
1.2 W |
RDS(ON)Max@ VGS(10V) (mΩ) |
50 mΩ |
RDS(ON)Max@ VGS(4.5V) (mΩ) |
60 mΩ |
RDS(ON)Max@ VGS(2.5V) (mΩ) |
85 mΩ |
|VGS(TH)| Max (V) |
1.3 V |
QG Typ @ |VGS| = 4.5V (nC) |
11.6 nC |
QG Typ @ |VGS| = 10V (nC) |
25.1 nC |
CISS Typ (pF) |
1326 pF |
CISS Condition @|VDS| (V) |
15 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2639 | 2023-09-26 | 2023-12-26 | Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly & Test Site Using PdCu Bond Wire with Standardization of Assembly Bill of Materials at CAT for Select Automotive Products |