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1N4448HWSQ

switching diode

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Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive supports PPAP) Automotive
Configuration Single
Polarity Anode, Cathode
Power Rating(mW) 200 mW
ESD Diodes (Y|N) No
Peak RepetitiveReverse VoltageVRRM (V) 80 V
Reverse RecoveryTime trr (ns) 4 ns
Maximum Average Rectifier Current IO (mA) 250 mA
Maximum Peak Forward Surge Current IFSM (A) 4 A
Forward Voltage Drop VF @ IF (mA) 0.72, 5 mA
Maximum ReverseCurrent IR (µA) 0.1 µA
TotalCapacitance CT (pF) 3.5 pF
V(BR)R (V) Min @IR=100μA 80
Trr(ns) Max @ IF=IR=10 mA, Irr=0.1xIR, RL=100Ω 4
Maximum Reverse Current IR @ VR (V) 80 V
VF(V) Max @ IF=10mA 0.855
CT(pF) Max @ VR = 0V, f = 1MHz 3.5

Related Content

Packages

Technical Documents

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2462 2020-05-08 2021-04-11 Phenitec Wafer Manufacturing Site Change, Additional Wafer Sources, Wafer Diameter Change, Additional Assembly and Test Site (Automotive)
PCN-2319 2018-03-09 2018-06-09 Qualification of Alternative Wafer Sources for Select Automotive Products Due to Closure of Diodes FabTech (KFAB) Facility