Developed to meet the rigorous demands of three phase BLDC motor control applications, the DMTH4004SPSQ and DMTH4005SPSQ are 100% avalanche tested, ensuring a robust design that is able to withstand the high pulses of reverse avalanche energy that can occur with inductive loads. Furthermore, at a gate-source voltage of 10V, the DMTH4004SPSQ and DMTH4005SPSQ feature maximum on state resistances of 2.7mΩ and 4mΩ, respectively, which together with their low gate charge ensures that power losses are kept to a minimum.
The efficiency of these MOSFETs is further enhanced by the low thermal resistance of the POWERDI®5060-8 package. This allows for a maximum junction temperature of 175°C ensuring that these MOSFETs are able to operate in high ambient temperature environments. For further information, visit the Company’s website at www.diodes.com.
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Company Contact:
Diodes Incorporated
Francis Tang
VP, Worldwide Discrete Products
P: 972-987-3900
E: pressinquiries@diodes.com
Investor Relations Contact:
Shelton Group
Leanne K. Sievers
EVP, Investor Relations
P: 949-224-3874
E: lsievers@sheltongroup.com