Diodes Incorporated
SO 8

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.

SO-8.png
Back to MOSFET Master Table

DMHC4035LSD

40V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

This new generation complementary MOSFET H-Bridge features low on-resistance achievable with low gate drive.

Feature(s)

  • 2 x N + 2 x P channels in a SOIC package
  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • Qualified to AEC-Q101 Standards for High Reliability

Application(s)

  • DC Motor Control
  • DC-AC Inverters

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity 2N2P
ESD Diodes (Y|N) No
|VDS| (V) 40 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 4.5, 3.7 A
PD @TA = +25°C (W) 1.5 W
RDS(ON)Max@ VGS(10V)(mΩ) 45, 65 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 58, 100 mΩ
|VGS(TH)| Min (V) 1, 1 V
|VGS(TH)| Max (V) 3, 3 V
QG Typ @ |VGS| = 10V (nC) 12.5, 11.1 nC
CISS Typ (pF) 574, 587 pF
CISS Condition @|VDS| (V) 20, 20 V

Related Content

Packages

Applications

Technical Documents

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
Source for Select Discrete Products