Diodes Incorporated
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DXTP07040CFG

PNP, 40V, 3A, PowerDI3333-8

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Description

40V PNP LOW VCESAT TRANSISTOR IN POWERDI3333-8

Feature(s)

• BVCEO > -40V
• Small Form Factor Thermally Efficient Package.
• Enables Higher Density End Products
• IC = -3A High Continuous Current
• ICM = -6A Peak Pulse Current
• Low Saturation Voltage VCE(sat) < -400mV @ -1A
• Minimum hFE 200 @ IC=-1A
• Rated to +175°C—Ideal For High Temperature Environment
• Wettable Flank For Improved Optical Inspection
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability

Application(s)

• High Side Switch
• Low Drop Out Regulator
• MOSFET or IGBT Gate Driving

Product Specifications

Product Parameters

Category Medium Power Transistor
Compliance(Only Automotive supports PPAP) Standard
Polarity PNP
VCEO, VCES (V) 40
IC (A) 3
ICM (A) 6
PD (W) 2.3
hFE (Min) 250
hFE (@ IC) (A) 0.5
hFE(Min 2) 150
hFE (@ IC2) (A) 2
VCE(sat) Max (mV) 200
VCE(SAT) (@ IC/IB) (A/mA) 0.5/5
VCE(sat) (Max.2) (mV) 500
VCE(sat) (@ IC/IB2) (A/mA) 2/50
fT (MHz) 100

Related Content

Packages

Technical Documents

Recommended Soldering Techniques

TN1.pdf

RoHS CofC