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The Tuner diode and Schottky Diode ranges use a standard Spice diode model and a typical file appears as follows:

*
*Zetex ZC830A Spice Model v1.0 Last Revised 4/3/92
*
.MODEL ZC830A D IS=5.355E-15 N=1.08 RS=0.1161 XTI=3
+ EG=1.11 CJO=19.15E-12 M=0.9001 VJ=2.164 FC=0.5
+ BV=45.1 IBV=51.74E-3 TT=129.8E-9
+ ISR=1.043E-12 NR=2.01
*
*NOTES: FOR RF OPERATION ADD PACKAGE INDUCTANCE 0F 2.5E-9H AND SET
*RS=0.68 FOR 2V, 0.60 FOR 5V, 0.52 FOR 10V OR 0.46 FOR 20V BIAS.
*
*$
*

In the diode model:

For operation at RF (which would be the norm for a varicap or tuner diode) it is recommended that a 2.5nH series inductor be added as an extra circuit element to correct for the inherent package inductance, this value will change with package size. Also, for some models data is available to enable the RS parameter better model Q at voltages other than the specified condition.

DIODES DISCLAIMER

DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY INDIRECT, SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA.

By accessing, reviewing and/or downloading the SM DATA, you unconditionally acknowledge and agree to the above "DIODES DISCLAIMER."

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  • IS controls forward and reverse current against voltage.
  • N controls forward current against voltage.
  • RS controls forward voltage at high current.
  • CJO, M and VJ control variation of capacitance with voltage.
  • BV and IBV control reverse breakdown characteristics.
  • TT controls switching reverse recovery characteristics.
  • ISR and NR control reverse biased leakage.
  • EG controls barrier height.
  • FC forward bias depletion capacitance coefficient.