Diodes Incorporated (Nasdaq: DIOD), a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic and analog semiconductor markets, today launched a line of high-efficiency N- and P-channel MOSFETs in low-profile DFN2020-6 packages. With an off-board height of only 0.4mm and a footprint of 4mm2, the DFN2020H4 packaged DMP2039UFDE4, a -25V rated P- channel device, is 50% thinner than competing devices. The other MOSFETs in the series are provided in the 0.5mm high DFN2020E package, which is 20% thinner than the common 0.6mm high alternatives.
Targeted at load-switching applications, the DMP2039UFDE4 also provides circuit designers with 3kV protection against human-borne electrostatic discharge. The new MOSFETs' low typical RDS(on), for example just 13mΩ at a VGS of 4.5V for the -12V P-channel DMP1022UFDE, means conduction losses can also be minimized in battery-charging applications.
The 20V N-channel DMN2013UFDE makes an ideal load switch or high-speed switch in DC/DC buck and boost converters and again offers a high 2kV ESD protection rating. Operating at a VDS of 60V, the DMN6040UFDE is one of the first high-voltage MOSFETs to be introduced in the DFN2020 package and suits small form-factor industrial and HVAC controls.
Particularly well-suited to ultra-slim portable product designs, such as smart phones, tablets and digital cameras, the initial series of nine MOSFETs is comprised of -12V, -20V, -25V and -40V P-channel and 12V, 20V and 60V N- channel parts. For further information, visit the Company's website athttp://www.diodes.com.
Diodes Incorporated (Nasdaq: DIOD), a Standard and Poor's SmallCap 600 and Russell 3000 Index company, is a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic and analog semiconductor markets. Diodes serves the consumer electronics, computing, communications, industrial, and automotive markets. Diodes' products include diodes, rectifiers, transistors, MOSFETs, protection devices, functional specific arrays, single gate logic, amplifiers and comparators, Hall-effect and temperature sensors; power management devices, including LED drivers, DC-DC switching and linear voltage regulators, and voltage references along with special function devices, such as USB power switches, load switches, voltage supervisors, and motor controllers. The Company's corporate headquarters, logistics center, and Americas' sales office are located in Plano, Texas. Design, marketing, and engineering centers are located in Plano; San Jose, California; Taipei, Taiwan; Manchester, England; and Neuhaus, Germany. The Company's wafer fabrication facilities are located in Kansas City, Missouri and Manchester, with two manufacturing facilities located in Shanghai, China, another in Neuhaus, and two joint venture facilities located in Chengdu, China. Additional engineering, sales, warehouse, and logistics offices are located in Fort Worth, Texas; Taipei; Hong Kong; Manchester; and Munich, Germany, with support offices located throughout the world. For further information, including SEC filings, visit the Company's website at http://www.diodes.com.
Source: Diodes Incorporated
VP, Worldwide Discrete Products
EVP, Investor Relations