Diodes Incorporated (Nasdaq: DIOD), a Standard and Poor’s SmallCap 600 and Russell 3000 Index company, delivers high-quality semiconductor products to the world’s leading companies in the automotive, industrial, computing, consumer electronics, and communications markets.
Diodes' wafer fabrication facility in Greenock, Scotland (UK) has ~300 employees and produces wafers to support analog ICs and discrete components. These products are used in a wide variety of different markets, including automotive, industrial, consumer, communications, and computing.
Principal Duties and Responsibilities:
This position is for a Graduate discrete Design/Integration Engineer at the Greenock fabrication facility.
The graduate engineer will be assigned a mentor and develop to become responsible for designing and integrating Discrete MOSFET Diodes technologies, to support the Didoes Power MOSFET roadmap.
Primary responsibilities are designing and integrating Discrete MOSFET Diodes technologies.
The engineer is also responsible for developing innovative solutions to complex problems.
Successful candidate will work with colleagues in Taiwan and USA based design and business groups, and with colleagues from different departments within GFAB, including process engineers, product engineers, and test engineers to achieve project goals.
The successful candidate will have a BSc Degree (First or 2:1) or higher in physics/applied physics, electrical and electronic engineering, or equivalent.
Course should ideally have included semiconductor device physics and electronic devices.
How to Apply:
Candidates should already have the right to work in the UK before applying.
Please email with a cover letter and CV firstname.lastname@example.org with the subject head Gfab Graduate Recruitment.