*DIODES_INC_SPICE_MODEL ZXGD3111 version1 *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=20May2016 *VERSION=1 *PIN ORDER 1:GND 2:GND 3:Vcc 4:GATE 5:PGND 6:PGND 7:DRAIN .SUBCKT ZXGD3111 1 2 3 4 5 6 7 Gin 12 11 7 2 .1 D1 10 11 DMOD D2 10 12 DMOD Rset 11 12 33.3k TC2=.1m Cset 11 12 1p Rgnd 12 2 1m Sw 14 2 12 11 SMOD Rbias 3 14 1k Cbias 14 2 .8n Dz 2 14 DMOD1 Rshort1 2 1 10m Rshort2 5 6 10m Q1 3 14 31 npns Q2 3 31 4 npnl Q3 2 31 4 pnpl Q4 2 14 31 pnps .MODEL DMOD D(BV=20) .MODEL DMOD1 D(BV=12) .MODEL SMOD VSWITCH(VOFF=10.5 VON=9.5 ROFF=1meg RON=.5) .MODEL npns NPN IS=6E-16 NF=1.005 BF=260 IKF=0.007 VAF=51 ISE=2E-16 NE=1.35 + BR=25 ISC=1e-15 NC=1.2 RB=200 RE=3 RC=0.6 CJC=0.24E-12 MJC=0.33 VJC=0.7 + CJE=1.02E-12 MJE=0.3 VJE=0.7 + TF=1E-9 TR=30e-9 .MODEL npnl NPN IS=3E-13 NF=1.005 BF=260 IKF=0.7 VAF=51 ISE=1E-14 NE=1.45 + BR=25 ISC=1e-13 NC=1.2 RB=2 RE=0.05 RC=0.1 CJC=27E-12 MJC=0.4 VJC=0.7 + CJE=114E-12 MJE=0.35 VJE=0.7 + TF=1E-9 TR=30e-9 .MODEL pnps PNP IS=5E-16 NF=1 BF=350 IKF=0.006 VAF=51 ISE=5E-16 NE=1.35 + BR=25 ISC=1e-15 NC=1.2 RB=500 RE=5 RC=.6 CJC=0.54E-12 MJC=0.32 VJC=0.5 + CJE=1.05E-12 MJE=0.2 VJE=0.6 + TF=10E-9 TR=30e-9 .MODEL pnpl PNP IS=2.2E-13 NF=1 BF=350 IKF=0.6 VAF=51 ISE=1E-14 NE=1.45 + BR=25 ISC=1e-13 NC=1.2 RB=3 RE=0.05 RC=0.1 CJC=35E-12 MJC=0.4 VJC=0.6 + CJE=125E-12 MJE=0.5 VJE=1 + TF=10E-9 TR=30e-9 .ENDS * (c) 2016 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *DIODES_INC_SPICE_MODEL ZXGD3112 version1 *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=20May2016 *VERSION=1 *PIN ORDER 1:GND 2:GND 3:Vcc 4:GATE 5:PGND 6:PGND 7:DRAIN .SUBCKT ZXGD3112 1 2 3 4 5 6 7 Gin 12 11 7 2 .1 D1 10 11 DMOD D2 10 12 DMOD Rset 11 12 33.3k TC2=.1m Cset 11 12 1p Rgnd 12 2 1m Sw 14 2 12 11 SMOD Rbias 3 14 1k Cbias 14 2 .8n Dz 2 14 DMOD1 Rshort1 2 1 10m Rshort2 5 6 10m Q1 3 14 31 npns Q2 3 31 4 npnl Q3 2 31 4 pnpl Q4 2 14 31 pnps .MODEL DMOD D(BV=20) .MODEL DMOD1 D(BV=12) .MODEL SMOD VSWITCH(VOFF=10.5 VON=9.5 ROFF=1meg RON=.5) .MODEL npns NPN IS=6E-16 NF=1.005 BF=260 IKF=0.007 VAF=51 ISE=2E-16 NE=1.35 + BR=25 ISC=1e-15 NC=1.2 RB=200 RE=3 RC=0.6 CJC=0.24E-12 MJC=0.33 VJC=0.7 + CJE=1.02E-12 MJE=0.3 VJE=0.7 + TF=1E-9 TR=30e-9 .MODEL npnl NPN IS=3E-13 NF=1.005 BF=260 IKF=0.7 VAF=51 ISE=1E-14 NE=1.45 + BR=25 ISC=1e-13 NC=1.2 RB=2 RE=0.05 RC=0.1 CJC=27E-12 MJC=0.4 VJC=0.7 + CJE=114E-12 MJE=0.35 VJE=0.7 + TF=1E-9 TR=30e-9 .MODEL pnps PNP IS=5E-16 NF=1 BF=350 IKF=0.006 VAF=51 ISE=5E-16 NE=1.35 + BR=25 ISC=1e-15 NC=1.2 RB=500 RE=5 RC=.6 CJC=0.54E-12 MJC=0.32 VJC=0.5 + CJE=1.05E-12 MJE=0.2 VJE=0.6 + TF=10E-9 TR=30e-9 .MODEL pnpl PNP IS=2.2E-13 NF=1 BF=350 IKF=0.6 VAF=51 ISE=1E-14 NE=1.45 + BR=25 ISC=1e-13 NC=1.2 RB=3 RE=0.05 RC=0.1 CJC=35E-12 MJC=0.4 VJC=0.6 + CJE=125E-12 MJE=0.5 VJE=1 + TF=10E-9 TR=30e-9 .ENDS * (c) 2016 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *DIODES_INC_SPICE_MODEL ZXGD3108 version1 *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=20May2016 *VERSION=1 .SUBCKT ZXGD3108 1 2 3 4 5 6 7 8 Gin 12 11 8 2 .1 D1 10 11 DMOD D2 10 12 DMOD Rset 11 12 33.3k TC2=.1m Cset 11 12 1p Rgnd 12 2 1m Sw 14 2 12 11 SMOD Rbias 5 14 1k Cbias 14 2 .8n Rshort1 2 3 10m Rshort2 5 6 10m Q1 5 14 31 npns Q2 5 31 4 npnl Q3 2 31 4 pnpl Q4 2 14 31 pnps .MODEL DMOD D(BV=20) .MODEL SMOD VSWITCH(VOFF=10.5 VON=9.5 ROFF=1meg RON=.5) .MODEL npns NPN IS=6E-16 NF=1.005 BF=260 IKF=0.007 VAF=51 ISE=2E-16 NE=1.35 + BR=25 ISC=1e-15 NC=1.2 RB=200 RE=3 RC=0.6 CJC=0.24E-12 MJC=0.33 VJC=0.7 + CJE=1.02E-12 MJE=0.3 VJE=0.7 + TF=1E-9 TR=30e-9 .MODEL npnl NPN IS=3E-13 NF=1.005 BF=260 IKF=0.7 VAF=51 ISE=1E-14 NE=1.45 + BR=25 ISC=1e-13 NC=1.2 RB=2 RE=0.05 RC=0.1 CJC=27E-12 MJC=0.4 VJC=0.7 + CJE=114E-12 MJE=0.35 VJE=0.7 + TF=1E-9 TR=30e-9 .MODEL pnps PNP IS=5E-16 NF=1 BF=350 IKF=0.006 VAF=51 ISE=5E-16 NE=1.35 + BR=25 ISC=1e-15 NC=1.2 RB=500 RE=5 RC=.6 CJC=0.54E-12 MJC=0.32 VJC=0.5 + CJE=1.05E-12 MJE=0.2 VJE=0.6 + TF=10E-9 TR=30e-9 .MODEL pnpl PNP IS=2.2E-13 NF=1 BF=350 IKF=0.6 VAF=51 ISE=1E-14 NE=1.45 + BR=25 ISC=1e-13 NC=1.2 RB=3 RE=0.05 RC=0.1 CJC=35E-12 MJC=0.4 VJC=0.6 + CJE=125E-12 MJE=0.5 VJE=1 + TF=10E-9 TR=30e-9 .ENDS * (c) 2016 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *DIODES_INC_SPICE_MODEL ZXGD3105 *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=29Nov2012 *VERSION=1 .SUBCKT ZXGD3105 1 2 3 4 5 6 7 8 L1 1 11 2n L2 7 12 2n Din 3 4 DMOD1 Rin 3 12 30000 *Dx 3 5 DMOD D1 3 11 DMOD D2 12 3 DMOD Q1 5 3 12 NMOD G1 11 13 VALUE={1.38e-11*(exp((V(30)-V(13))/.0026))} G2 14 12 VALUE={1.38e-11*(exp((V(14)-V(30))/.0026))} R01 11 13 1000000 R02 14 12 1000000 R03 13 8 2 R04 14 8 1.2 D3 8 11 DMOD D4 12 8 DMOD R1 5 30 10 C2 30 12 8p CS 30 8 2p .MODEL DMOD D(IS=8n BV=30) .MODEL DMOD1 D(IS=200E-15 RS=59.7m + CJO=.6p VJ=.42 M=0.36 N=1.35 TT=7n) .MODEL NMOD NPN(IS=1.25E-15 BF=11 NF=1 ISE=6E-16 NE=1.15 CJC=2.56E-12 VJC=.72 MJC=.21 CJE=3.72E-12 VJE=.72 MJE=.24 TR=.1E-9) .ENDS * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES-BCD AP2127 ADJ Version Spice Model v1.0 * *NOTE: This is a simplified model not all features are modeled. * .subckt AP2127_ADJ 1 2 3 4 5 * NODES: VIN GND EN ADJ VOUT M1 5 9 1 1 MOD1 L=1u W=1000u R1 6 1 1E6 C1 9 1 20E-12 C2 5 9 20E-12 G1 2 20 4 12 6E-6 G2 2 22 12 4 6E-6 F1 22 2 VS 1 F2 1 6 VS 20 G3 6 1 22 2 100E-6 R3 20 23 10E3 VS 23 2 0 C3 20 2 310E-15 C4 20 5 10E-12 R2 22 2 5E6 R5 22 24 400E3 C5 24 2 20E-12 D1 5 1 Dmod1 R6 3 13 20E4 R7 3 2 3E6 C6 13 2 4E-6 R8 1 5 50E6 R9 6 9 20E3 R10 2 12 Rmod1 1 R40 5 2 5E4 S1 1 6 13 2 Smod1 I1 2 12 0.8 .MODEL MOD1 PMOS (VTO=-0.82 RS=0.2 RD=0.2 IS=1E-15 KP=0.73 KF=2e-19 AF=1.22) .MODEL Dmod1 D (IS=1E-13 RS=0.5 N=1) .MODEL Dmod2 D (IS=1E-13 RS=0.1 N=0.5) .MODEL Rmod1 RES (TC1=-3E-5 TC2=-1E-7) .MODEL Smod1 VSWITCH RON=1E-3 ROFF=10E6 VON=0.5 VOFF=1.2 .ENDS AP2127_ADJ * *TITLE=AP8803 MACROMODEL *ORIGIN=DZSL_AG_GS *SIMULATOR=DIODES, SIMETRIX *DATE=6th Jan 2012 *VERSION=1 *PIN_ORDER 1:SW, 2:GND, 3:CTRL, 4:SET, 5:VIN * * SIMetrix macromodel for AL8803 Buck LED Driver * based on work by Tim Wilson .subckt AL8803_SIMETRIX 10 26 13 20 18 * pins-------------------1---2---3----4---5 *names SW GND CTRL SET VIN * Vref Generator * E2 19 26 18 26 1 B111 14 26 V=Min(V(19), 1.25) R3 14 19 20k R4 14 13 200k * CTRL input filter * * Faster (but unrealistic) startup can be * achieved by changing initial conditions * on C1 to C3 to match the settled value. * eg 1.25V if CTRL is floating in the application * or equal to the external DC voltage applied to CTRL * or equal to the average value of the PWM signal * applied to CTRL C1 15 26 5p IC=0 C2 16 26 5p IC=0 C3 17 26 5p IC=0 R5 13 15 7.7meg R6 15 16 7.7meg R7 16 17 7.7meg E7 12 26 17 26 1 * CTRL lockout with hysteresis * R8 12 adj_lockout 1000 I1 12 adj_lockout DC 50uA C7 adj_lockout 12 1p IC=0 X_S4 adj_lockout 26 adj_lockout 12 AP_S4 X_S5 adj_lockout 26 23 26 AP_S5 * UV lockout * X_S6 18 26 23 26 AP_S6 * Main Function * G2 26 8 18 20 1m C4 26 20 20p R9 26 9 3.832k R10 9 8 10.859k X_S7 23 26 9 26 AP_S7 G3 21 26 8 12 1000m R11 26 21 1meg V3 24 26 700mV D8 24 21 Dclamp V4 22 26 6V D9 21 22 Dclamp * Comp Delay (Asymmetric) * E4 25 26 21 26 1 C6 26 23 25p R13 23 25 2k * Output NMOS * X_S8 23 26 11 26 AP_S8 R12 11 10 0.4 C5 26 10 100p * Supply Current * X_S3 adj_lockout 26 4 7 AP_S3 R1 26 7 1.58k R2 26 4 67k X_S2 18 26 6 4 AP_S2 V1 5 26 1V X_F1 6 5 18 26 AP_F1 * Timestep Control * * Only purpose is to force timestep without using a control card * V99 99 26 DC 0 AC 0 PULSE 0 0 0 100n 100n 500n 1u R99 99 26 100 .model Dzener D Is=1e-8 N=10 bv=1.245 ibv=1e-12 Cjo=.1e-12 Rs=.1 TBV1=4e-5 nbv=.01 .model Dclamp D Is=2.682n N=1.836 Rs=.5664 Ikf=44.17m Cjo=4p M=.3333 Vj=.5 .subckt AP_F1 1 2 3 4 F_F1 3 4 VF_F1 1 VF_F1 1 2 0V .ends AP_F1 .subckt AP_S3 1 2 3 4 S_S3 3 4 1 2 S3 RS_S3 1 2 1G .MODEL S3 VSWITCH Roff=1e6 Ron=1.0 Voff=198mV Von=200mV .ends AP_S3 .subckt AP_S2 1 2 3 4 S_S2 3 4 1 2 S2 RS_S2 1 2 1G .MODEL S2 VSWITCH Roff=1e6 Ron=1.0 Voff=1.248V Von=1.25V .ends AP_S2 .subckt AP_S6 1 2 3 4 S_S6 3 4 1 2 S6 RS_S6 1 2 1G .MODEL S6 VSWITCH Roff=10e6 Ron=1.0 Voff=6.505V Von=6.495V .ends AP_S6 .subckt AP_S7 1 2 3 4 S_S7 3 4 1 2 S7 RS_S7 1 2 1G .MODEL S7 VSWITCH Roff=10e6 Ron=1.0 Voff=2750mV Von=2755mV .ends AP_S7 .subckt AP_S8 1 2 3 4 S_S8 3 4 1 2 S8 RS_S8 1 2 1G .MODEL S8 VSWITCH Roff=10e6 Ron=1.0 Voff=2750mV Von=2755mV .ends AP_S8 .subckt AP_S4 1 2 3 4 S_S4 3 4 1 2 S4 RS_S4 1 2 1G .MODEL S4 VSWITCH Roff=10e6 Ron=1 Voff=255mV Von=245mV .ends AP_S4 .subckt AP_S5 1 2 3 4 S_S5 3 4 1 2 S5 RS_S5 1 2 1G .MODEL S5 VSWITCH Roff=10e6 Ron=1.0 Voff=251mV Von=249mV .ends AP_S5 .ends AP8803_SIMETRIX * * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *TITLE=AL8806 MACROMODEL *ORIGIN=DZSL_AG_GS *SIMULATOR=DIODES, SIMETRIX and PSPICE *DATE=22 Jul 2013 *VERSION=3 *PIN_ORDER 1:SET, 2:GND, 3:GND, 4:CTRL, 5:SW, 6:SW, 7: N/C, 8: VIN * This model is intended for feasibility study of application * design. It is expected that it will not accurately represent * the device real performance. However some important features * of the device are modelled approximately. * The model does not include effects of temperature or self-heating. * Testing of prototype hardware and optimisation on the bench * is always required before production build. * NOTE: set RELTOL=1E-5 for clean switching waveform .subckt AL8806 1 2 3 4 5 6 7 8 Rsh1 2 3 1u Rsh2 5 6 1u * * Block 1: Vref Generator * input nodes 8 and 2, outputs 11 and 2 .param VIL1=0.8 VOL1=0 VIH1=3.45 VOH1=2.5 ;high and low limits of input and output .param MUH1=0.05 MUL1=0.1 ; high and low curve error .param SL1={(VOH1-VOL1)/(VIH1-VIL1)} ; gain slope E11 11 2 value={min(max(VOL1+SL1*(V(8)-V(2)-VIL1+MUL1*(1-tanh((V(8)-V(2)-VIL1+MUL1)/MUL1)) + -MUH1*(1+tanh((V(8)-V(2)-VIH1-MUH1)/MUH1))) ,VOL1),VOH1)} R11 11 4 50k * Block 2: CTRL limiter * input nodes 4 and 2, outputs 21 and 2 .param VIL2=0 VOL2=0 VIH2=2.5 VOH2=2.5 ;high and low limits of input and output .param MUH2=0.001 MUL2=0.2 ; high and low curve error .param SL2={(VOH2-VOL2)/(VIH2-VIL2)} ; gain slope E21 21 2 value={min(max(VOL2+SL2*(V(4)-V(2)-VIL2+MUL2*(1-tanh((V(4)-V(2)-VIL2+MUL2)/MUL2)) + -MUH2*(1+tanh((V(4)-V(2)-VIH2-MUH2)/MUH2))) ,VOL2),VOH2)} * Block 3: CTRL lockout with hysteresis * R32 21 31 1000 I31 21 31 100uA R31 31 32 1k C31 32 2 10p S31 31 21 32 2 S_31 .model S_31 VSWITCH Roff=10e6 Ron=1 Voff=505mV Von=495mV S32 53 2 32 2 S_32 .MODEL S_32 VSWITCH Roff=10e6 Ron=100 Voff=501mV Von=499mV * Block 4: UVLO with hysteresis* E41 41 2 value={0.5*(1+tanh(1e3*(V(43)-V(8)+5.7)))} R41 41 42 1k C41 42 2 20p R42 42 43 800k R43 43 2 200k S41 53 2 42 2 S_41 .MODEL S_41 VSWITCH Roff=1e6 Ron=100 Voff=0.4 Von=0.6 * Block 5: Current Sense Comparator* G51 2 51 8 1 1m ; input amplifier C51 2 1 3p ; input capacitance * SET input current; asymptote input nodes 1 and 2, outputs 1 and 2 .param xx5=5 yy5=16u nn5=32;input corner, output limit, asymptote power .param aa5={xx5**nn5} G52 1 2 value={yy5*(V(1)-V(2))/(aa5+(V(1)-V(2))**nn5)**(1/nn5)} R51 2 52 10.417k R52 52 51 20.833k S51 52 2 66 2 S_51 .MODEL S_51 VSWITCH Roff=10e6 Ron=1.0 Voff=2.5V Von=2.8V C52 51 2 0.5p G53 53 2 value={0.01*tanh(100*(V(51)-V(21)))} ;comparator C54 53 2 1f V51 54 2 700mV D51 54 53 Dclamp V52 55 2 8V D52 53 55 Dclamp * Block 6: Comp Delay and gate driver* R64 53 63 10Meg ; input filter with C61 C61 63 2 0.0015p ; G61 61 65 Value={0.1*(max(V(63)-V(65)-0.5,0))**2*(V(61)-V(65))} G62 65 62 Value={0.1*(max(V(65)-V(63)-0.5,0))**2*(V(65)-V(62))} R66 61 65 10meg R67 65 62 10meg R61 8 61 1.2 R62 62 2 1.2 R63 65 2 10k R65 65 64 1 ; driver current sense R68 66 64 49 ; output resistance-1 ohm C62 2 66 25f * Block 7: Output NMOS * S71 72 71 66 71 S_71 .MODEL S_71 VSWITCH Roff=10e6 Ron=0.25 Voff=2.5V Von=2.8V R72 72 5 50m ; on resistance = R72 + R73 + Ron(S71) R73 71 2 50m C73 72 71 100p C71 66 71 40p C72 72 66 15p * Block 8: Supply Current * G81 8 2 Value={(300u*(V(11)-V(2))/VOH1)+0.6u*(V(8)-V(2))} * Block 9: Protection diodes D91 2 5 D_1 ;SW D92 2 8 D_1 ;VIN D93 2 4 D_2 ;CTRL D94 8 1 D_2 ;SET forward D95 1 8 D_2 ;SET reverse .model Dclamp D Is=2.682n N=1.836 Rs=.5664 Ikf=44.17m Cjo=4p M=.3333 Vj=.5 .model D_1 D IS=1e-14 BV=40 .model D_2 D IS=1e-14 BV=6.5 .ends AL8805 * ===================================================================== * * (c) 2013 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 4949 Hedgcoxe Road, Suite 200, Plano, TX 75024, USA *TITLE=AL8807 MACROMODEL *ORIGIN=DZSL_AG_GS *SIMULATOR=DIODES, SIMETRIX and PSPICE *DATE=17th Jan 2013 *VERSION=1 *PIN_ORDER 1:SW, 2:GND, 3:CTRL, 4:SET, 5:VIN * * This model is intended for feasibility study of application * design. It is expected that it will not accurately represent * the device real performance. However some important features * of the device are modelled approximately. * The model does not include effects of temperature or self-heating. * Testing of prototype hardware and optimisation on the bench * is always required before production build. * * NOTE: set RELTOL=1E-5 for clean switching waveform * .subckt AL8807 10 26 13 20 18 * Connections SW GND CTRL SET VIN * pins SOT23 1 2 3 4 5 * * Block 1: Vref Generator * input is V(18)-V(26) *required input parameters .param VIL1=0.7 VIH1=3.5 VOL1=0 VOH1=2.5 ; low and high limits of input and output .param MUL1=0.1 MUH1=0.05 ; low and high curve error *calculations .param KL1={MUL1*tanh((VIH1-VIL1)/MUL1)} KH1={MUH1*tanh((VIH1-VIL1)/MUH1)} .param SL1={(VOH1-VOL1)/(VIH1-VIL1-KL1-KH1)} ;gain slope E11 14 26 value={min(max(VOL1+SL1*(V(18)-V(26)-VIL1-MUL1*tanh((V(18)-V(26)-VIL1)/MUL1) + -MUH1*tanh((V(18)-V(26)-VIH1)/MUH1)-KH1),VOL1),VOH1)} R4 14 13 50k * Block 2: CTRL limiter * tanh limiter, type 1, input nodes 13 and 26, outputs 12 and 26 .param VIH2=2.5 VOH2=2.5 ;high limits of input and output .param MU2=0.001 ; curve error .param SL2={VOH2/VIH2} ;gain slope E21 12 26 value={SL2*min(V(13)-V(26)-MU2*(1+tanh((V(13)-V(26)-VIH2-MU2)/MU2)),VOH2)} * Block 3: CTRL lockout with hysteresis * R8 12 adj_lockout 1000 I1 12 adj_lockout 100uA R31 adj_lockout 31 1k C31 31 26 10p S4 adj_lockout 12 31 26 S_4 .model S_4 VSWITCH Roff=10e6 Ron=1 Voff=505mV Von=495mV S5 21 26 31 26 S_5 .MODEL S_5 VSWITCH Roff=10e6 Ron=100 Voff=501mV Von=499mV * Block 4: UVLO with hysteresis* E41 41 26 value={0.5*(1+tanh(1e3*(V(43)-V(18)+5.7)))} R41 41 42 1k C41 42 26 20p R42 42 43 800k R43 43 26 200k S41 21 26 42 26 S_41 .MODEL S_41 VSWITCH Roff=1e6 Ron=100 Voff=0.4 Von=0.6 * Block 5: Current Sense Comparator* G51 26 8 18 20 1m ; input amplifier C51 26 20 3p ; input capacitance * SET input current; asymptote input nodes 20 and 26, outputs 20 and 26 .param xx5=5 yy5=16u nn5=32;input corner, output limit, asymptote power .param aa5={xx5**nn5} G52 20 26 value={yy5*(V(20)-V(26))/(aa5+(V(20)-V(26))**nn5)**(1/nn5)} R51 26 9 10.417k R52 9 8 20.833k S51 9 26 23 26 S_51 .MODEL S_51 VSWITCH Roff=10e6 Ron=1.0 Voff=2.5V Von=2.8V C52 8 26 0.5p G53 21 26 value={0.01*tanh(100*(V(8)-V(12)))} ;comparator C54 21 26 1f V3 24 26 700mV D8 24 21 Dclamp V4 22 26 8V D9 21 22 Dclamp * Block 6: Comp Delay and gate driver* R64 21 63 10Meg ; input filter with C61 C61 63 26 0.0015p ; G4 61 25 Value={0.1*(max(V(63)-V(25)-0.5,0))**2*(V(61)-V(25))} G5 25 62 Value={0.1*(max(V(25)-V(63)-0.5,0))**2*(V(25)-V(62))} R66 61 25 10meg R67 25 62 10meg R61 18 61 1.2 R62 62 26 1.2 R63 25 26 10k R65 25 64 1 ; driver current sense R13 23 64 330 ; output resistance-1 ohm C6 26 23 25f * Block 7: Output NMOS * S8 11 71 23 71 S_8 .MODEL S_8 VSWITCH Roff=10e6 Ron=0.25 Voff=2.5V Von=2.8V R72 11 10 50m ; on resistance = R72 + R73 + Ron(S8) R73 71 26 50m C5 11 71 100p C71 23 71 40p C72 11 23 15p * Block 8: Supply Current * G81 18 26 Value={(300u*(V(14)-V(26))/VOH1)+0.6u*(V(18)-V(26))} * Block 9: Protection diodes D91 26 10 D_1 ;SW D92 26 18 D_1 ;VIN D93 26 13 D_2 ;CTRL D94 18 20 D_2 ;SET forward D95 20 18 D_2 ;SET reverse .model Dclamp D Is=2.682n N=1.836 Rs=.5664 Ikf=44.17m Cjo=4p M=.3333 Vj=.5 .model D_1 D IS=1e-14 BV=40 .model D_2 D IS=1e-14 BV=6.5 .ends AL8807 * ===================================================================== * * (c) 2013 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 4949 Hedgcoxe Road, Suite 200, Plano, TX 75024, USA * *TITLE=AL8807A MACROMODEL *ORIGIN=DZSL_AG_GS *SIMULATOR=DIODES, SIMETRIX and PSPICE *DATE=1st Feb 2013 *VERSION=1 *PIN_ORDER 1:SW, 2:GND, 3:CTRL, 4:SET, 5:VIN * * This model is intended for feasibility study of application * design. It is expected that it will not accurately represent * the device real performance. However some important features * of the device are modelled approximately. * The model does not include effects of temperature or self-heating. * Testing of prototype hardware and optimisation on the bench * is always required before production build. * * NOTE: set RELTOL=1E-5 for clean switching waveform * .subckt AL8807A 1 2 3 4 5 * Connections SW GND CTRL SET VIN * pins SOT23 1 2 3 4 5 * * Block 1: Vref Generator * input nodes 5 and 2, outputs 11 and 2 .param VIL1=0.8 VOL1=0 VIH1=3.45 VOH1=2.5 ;high and low limits of input and output .param MUH1=0.05 MUL1=0.1 ; high and low curve error .param SL1={(VOH1-VOL1)/(VIH1-VIL1)} ; gain slope E11 11 2 value={min(max(VOL1+SL1*(V(5)-V(2)-VIL1+MUL1*(1-tanh((V(5)-V(2)-VIL1+MUL1)/MUL1)) + -MUH1*(1+tanh((V(5)-V(2)-VIH1-MUH1)/MUH1))) ,VOL1),VOH1)} R11 11 3 50k * Block 2: CTRL limiter * input nodes 3 and 2, outputs 21 and 2 .param VIL2=0 VOL2=0 VIH2=2.5 VOH2=2.5 ;high and low limits of input and output .param MUH2=0.001 MUL2=0.2 ; high and low curve error .param SL2={(VOH2-VOL2)/(VIH2-VIL2)} ; gain slope E21 21 2 value={min(max(VOL2+SL2*(V(3)-V(2)-VIL2+MUL2*(1-tanh((V(3)-V(2)-VIL2+MUL2)/MUL2)) + -MUH2*(1+tanh((V(3)-V(2)-VIH2-MUH2)/MUH2))) ,VOL2),VOH2)} * Block 3: CTRL lockout with hysteresis * not used * Block 4: UVLO with hysteresis* E41 41 2 value={0.5*(1+tanh(1e3*(V(43)-V(5)+5.7)))} R41 41 42 1k C41 42 2 20p R42 42 43 800k R43 43 2 200k S41 53 2 42 2 S_41 .MODEL S_41 VSWITCH Roff=1e6 Ron=100 Voff=0.4 Von=0.6 * Block 5: Current Sense Comparator* G51 2 51 5 4 1m ; input amplifier C51 2 4 3p ; input capacitance * SET input current; asymptote input nodes 4 and 2, outputs 4 and 2 .param xx5=5 yy5=16u nn5=32;input corner, output limit, asymptote power .param aa5={xx5**nn5} G52 4 2 value={yy5*(V(4)-V(2))/(aa5+(V(4)-V(2))**nn5)**(1/nn5)} R51 2 52 10.417k R52 52 51 20.833k S51 52 2 66 2 S_51 .MODEL S_51 VSWITCH Roff=10e6 Ron=1.0 Voff=2.5V Von=2.8V C52 51 2 0.5p G53 53 2 value={0.01*tanh(100*(V(51)-V(21)))} ;comparator C54 53 2 1f V51 54 2 700mV D51 54 53 Dclamp V52 55 2 8V D52 53 55 Dclamp * Block 6: Comp Delay and gate driver* R64 53 63 10Meg ; input filter with C61 C61 63 2 0.0015p ; G61 61 65 Value={0.1*(max(V(63)-V(65)-0.5,0))**2*(V(61)-V(65))} G62 65 62 Value={0.1*(max(V(65)-V(63)-0.5,0))**2*(V(65)-V(62))} R66 61 65 10meg R67 65 62 10meg R61 5 61 1.2 R62 62 2 1.2 R63 65 2 10k R65 65 64 1 ; driver current sense R68 66 64 330 ; output resistance-1 ohm C62 2 66 25f * Block 7: Output NMOS * S71 72 71 66 71 S_71 .MODEL S_71 VSWITCH Roff=10e6 Ron=0.25 Voff=2.5V Von=2.8V R72 72 1 50m ; on resistance = R72 + R73 + Ron(S71) R73 71 2 50m C73 72 71 100p C71 66 71 40p C72 72 66 15p * Block 8: Supply Current * G81 5 2 Value={(300u*(V(11)-V(2))/VOH1)+0.6u*(V(5)-V(2))} * Block 9: Protection diodes D91 2 1 D_1 ;SW D92 2 5 D_1 ;VIN D93 2 3 D_2 ;CTRL D94 5 4 D_2 ;SET forward D95 4 5 D_2 ;SET reverse .model Dclamp D Is=2.682n N=1.836 Rs=.5664 Ikf=44.17m Cjo=4p M=.3333 Vj=.5 .model D_1 D IS=1e-14 BV=40 .model D_2 D IS=1e-14 BV=6.5 .ends AL8807A * ===================================================================== * * (c) 2013 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 4949 Hedgcoxe Road, Suite 200, Plano, TX 75024, USA **$ENCRYPTED_LIB **$INTERFACE *$ .SUBCKT ZXLD1371_PSPICE GATE ADJ REF GI ISIM VIN PWM SGND STATUS + VAUX SHP PGND FLAG TADJ NC1 NC2 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 394197bedeb77a716f52d5ca6e23dacf5f77689faa8a663fbc39eed45909606b00d3e0b087c73744c9f6c53b093b66727f70dd368fa5728963912ffecb55b6d8 04f5acd939422ec02fbfcc2b872ff9461d45c8eb53f8a29c749d13634498f34bc9322890ded6647b56be7388bb4ba8853543ca07c959008c54d5980f69aa986e 5316fc9fe4e05facf588045849eceb90e6626fc5bfd508b16334dff5a8e8736c568101f0eaa845cf3900116365b28771ef6559fc277d4b8d420df9a063adc751 ddf70eae3b592905ac73e51ea6171029b9eabc28f38b49586ae3f463f161071fbfd58a4b12fceb5d00d3e0b087c73744c9f6c53b093b6672f1b3224347ba154c e0bee0f3fadd67246f52d5ca6e23dacf6ae3f463f161071f2da085ac1302fd51478a87bc5b8e6cf9691018eed3b49c363b7ed36af94fd8d0e1734198eb2d5d30 b0eb42ca922cce592fbfcc2b872ff94683aceacad20792c7749d13634498f34bc9322890ded6647b05ed049cabd059d7af34d43db6b6477cbc2933d56eb6c3c7 af399d32d282acb6184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8ca8e32446a12da7d50bd780059ff414f8 8f10d309634521e5107192c97b3918a9c76dbc50c48fbbe7d0fb8f8ac09713ec478a87bc5b8e6cf9691018eed3b49c363b7ed36af94fd8d0e1734198eb2d5d30 717cdf892ff6b6ff26c880f485e2ca3492ebc16da04e46be7de72266a8957c9762d766f77596a54bf588045849eceb90e6626fc5bfd508b1d776614f460f1ceb c6ada2f6665016dfac73e51ea6171029df13108db75bcac0ec8e4432708a2f10184dc1300cea2a1333803012812e35a27bbf3a0197757d1a10e6517c4d5c1c74 605b35877b85eee721377c54379bab5d239bdbe658d21d00044c5edbf77fecb6b03db27a4b23eea8387ddbd4b3ec85993c3ebf3aa31b5c39eb81723a9021625e 2ca24c18cb27721d153e73797dd8d866a0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c18663872d39f019dc350cbfaf73a0398017aa9b2faa6789e dff667fce1627b8f36b24b5db985d2d3ce28bcb138548355116fb2ef8f954fae37533a275f2c6d0eb5f1c17ee7956303f716375b8c71d2ca2a84cfa93f6086c1 00575617ddd170c91068d23fb1a14817be00a2a37fc213af7f6778186477bbeb7826d86a24e0c932558ae2e6b93c4040672f752658a09f218d5c737683766352 a147194f3a3bf6c0710f626c2faf14a6f716375b8c71d2ca7447dc705bd2b9a632f1f96ca76f178f24a8b58514063cc5773cfc1bd26698df56a4048f1e4ff032 f29d7d98ef0d8ffac4a17b59ca91381df45310c19b6b8ee57017057a427e6410b540685422c11ef9fceb72c6584bab533cf4807158e4909c9d6bedf9d0034ac8 605b35877b85eee721377c54379bab5dcd9f9b0fe66d8ad1b5b85bc0d31aaef583bc4964f97c0bfb1e00d217525559aedad4bb70f534f24c16944157eaac9744 a2faec34d68cdd2af13ee61e90b65ef18ce113ea01486d742446811279bcfdca7e4eff80f489c700d80f09fa99fcdc9f31ff87f86ef7d8025ac6c13a39cffff7 64a2af3d08b8c3fbe71f71e187584171b74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962dd61e0a440bad77e3138b871d3d163c946 273ef0efd9cac693c295486b1819e032f45310c19b6b8ee57017057a427e6410b540685422c11ef9f78e3835f7dcf08337b2d2e15ad7f2468671325e6f4b6b25 6422a9133f078ed399298f7cd44d061d706b807646b803717017057a427e6410b540685422c11ef93063c3bb852fe4d2fe14e8ed893f87905d43534984e52420 2579318862ec410f5268f2b9f86a0eca858728efae680901a23477990359ea58c64639ef522b82dbe7eefa795927f22cb124fbdd29716cfbacdab751cbf202c2 f29d7d98ef0d8ffab390595cafb1ab9635b229f6ed36cf79efe06c4f9b313c77dbc3554236bba2721c0530388a0d45f3f64c4168815a7f58b9ec58759fbaecf9 44e335dab141105980b07acdfe1a6318184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8c9d716709579b3adb ecc3810338d4a815ec85f36e56eb5e07f45310c19b6b8ee57017057a427e6410ce3e74f18b11c63edea2f49989a93410184dc1300cea2a136b276ab17ad27652 605b35877b85eee721377c54379bab5deb87848776396383b5b85bc0d31aaef5c78955b2f9a9a77ca7acfc5f2315b7c44c49b18e65b2012511d006434ff70a7c 2579318862ec410f5268f2b9f86a0eca858728efae6809018683b141dcb3272b7ae82484816be00fb5f1c17ee7956303f716375b8c71d2ca2a84cfa93f6086c1 605b35877b85eee721377c54379bab5dcc0121b5e20e20767e2db9a6f9c8f569a3453ba7982d296def7dd173ebafc8a5efe06c4f9b313c777a5f555c7f36bc06 55f7ebc1844b945cc9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1dfa360badf382ef60c1cb2f0da1ca881fcd6be7a2000af83 dff667fce1627b8f36b24b5db985d2d3ca919d09a48d33e1b19c9f724420bb21024a2e9187f5d113e73070a45f1d549ca0c7a89b875d76a7668ff86ff0a77892 273ef0efd9cac693699b83783a230135f45310c19b6b8ee57017057a427e6410b15a98c80c85bdd8834492d15d72f82c760b7acfc94bff32bd6e0240e530e0d3 00575617ddd170c977da2069621c0870be00a2a37fc213af7f6778186477bbeb9b7fc6a7cb92def0ea7d4f030068283373d9dc50e4e85c45abb485c8ac7a39ac 00575617ddd170c93a6d68c1db088061be00a2a37fc213af7f6778186477bbebe3abc915180b0fc75a90baf5cf07376f49bcb2e9b7241eb49d6bedf9d0034ac8 5dde899679de79ab1b335ff66691221544e30ee031766bfac90827f4e9cf024b821d3ad19a17fc5962d766f77596a54bf588045849eceb90e1051d295f61418a 317f1bcb1e5ac862ac73e51ea61710293497978ed7181356a099cec494ae8989f588045849eceb90e6626fc5bfd508b16334dff5a8e8736c4fe6e5c7e47db8f7 7b300a002f2d8ddd218ee09e41104590e28b1eaee7cc8472753c64a4a951701a9238c7ba345aa441c9f6c53b093b66727f70dd368fa5728963912ffecb55b6d8 b9ed3e04d2a793293fe9a17f99afa94395e943ccd8868a6ae93c8c7b51168b14478a87bc5b8e6cf9691018eed3b49c363b7ed36af94fd8d0e1734198eb2d5d30 f1b71296a16c9ee01b335ff66691221512ea7294e684b839f3c4e72344563a843b250a80e39602b5042f0c0c78bb0deb184dc1300cea2a136b276ab17ad27652 23ee73d6065f3641d811871cc3622e4a019b8717068e3d443f21a179b2be58baef1d7357d3c4e2f3644126c9831a96bdb74feb6ff8076c7955ab08ba49ed7650 2c7f46f84591bc12e2ad7048ed9193b1523b2604a68e8ef9fdf5f62657ccba9b2dc8ed9cc96ddaab24fdfd9bb2e10b07a0c7a89b875d76a7668ff86ff0a77892 857620ce20ef86cb26c880f485e2ca3415329f00962841785a4c41089daca73e787784bc593e995d23b782b3d6a37df1e7eefa795927f22c7d5ecccba7838ea4 8807bf206d8a4bf4da90698ba1ee0b1344e30ee031766bfa2eb33e7d0c66effdc4263047304fc101abbf8da1f96d2fb2492a61aa0d75bc53f41f2ac565d1fd58 d36d26370afc449b1fc67ec68dbc352ea826917222a64646f588045849eceb90e6626fc5bfd508b16334dff5a8e8736c568101f0eaa845cf8ea88232772e9185 f197831ab997cb511b335ff666912215962084b4cabaea50c0996ee0a6b29beec9f6c53b093b66727f70dd368fa57289ba6003231ac0493b0801900bb0d2ae74 71dbbe87e53e082f599bf13f0371d5b4fda72f5818c81bf49e91cddcc46315d65ed2fe27f6c34366691018eed3b49c363b7ed36af94fd8d0e1734198eb2d5d30 e8686e014b15db761b335ff6669122159c3be3c559456c162f7290d7f191b8ae23b782b3d6a37df1e7eefa795927f22cb124fbdd29716cfbacdab751cbf202c2 c858d814c56a2bcc769be4ce041f188824046311950bf77c4ba887e5e5417704abbf8da1f96d2fb2492a61aa0d75bc5381d5360d0e44f50c5d43534984e52420 48a94d11d238250f3e182210b1d9c2bc0dc94f7d1fc62090e213edf528fee6b2300b06d6b098e56a7a72378188149f25691018eed3b49c36df42c068afe98c8a 9e5134779ded2111f45310c19b6b8ee512d693d8957db81b478a87bc5b8e6cf9691018eed3b49c363b7ed36af94fd8d0b677be974a8015938337dc0ba5af8d26 e72ff3e7fc7190cdda90698ba1ee0b136ace929a007d96c44ba887e5e5417704abbf8da1f96d2fb2492a61aa0d75bc5363ed35b1266e36425d43534984e52420 f58ffbed3f217484706b807646b80371895d05bc59882af8f1b8d790cb2e41c9faca85d0862a74fbfc528ba36843793b0fa984f27f78bccf7d4d396707233756 4cf294edf7e0961f9b08e82f0908ea3a184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8c9d716709579b3adb 4a2e92973c32fd12551cc969959c56b127056d71145457d5fa52237fdde26b44691018eed3b49c363b7ed36af94fd8d0b677be974a8015938337dc0ba5af8d26 6f23563494b56938706b807646b8037132122f815f7bf45c8e927edd2d745704be7b72e16c425c0c78974fa8c5970bd3128fa59261fa1a65f44496155f03ed4f 2a76c18f665e8c270dbeca54fe4a6fa68c81757d6b17a69f9f7df7e1d853713719fc61b223c11fd91b03c3c8b1210eb1c9f6c53b093b6672f1b3224347ba154c 1fcbc249eb94715326c880f485e2ca340639c092da8a0ddddc87d8f5e8e39da462d766f77596a54bf588045849eceb90e6626fc5bfd508b1d776614f460f1ceb 52ba738fba12eb4a1b335ff6669122152ca8047c7957b30eae1e05fddac936fca0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c2a9ba28f5e45e265 f80a395284a571112fbfcc2b872ff94677ddc6f43cf11494749d13634498f34bc9322890ded6647b913601db0b53db113543ca07c959008c6f43b879c715b844 0db7e72d6e369fe1691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db1a4300bf221b913af248f4846b4e8d26c2c478990dc28ced 340902c1590d2246cbf62b4d3dcda7184aed8b565a5e13815c9e084edd7d2158f588045849eceb90e6626fc5bfd508b16334dff5a8e8736c4fe6e5c7e47db8f7 09a2b761cdd63986d58d21bd311ea6ba2716e67bb37c739248a22ba84875dab5e3e5946109ab96442be4d4793f1a270b2bdc2471723c531b74fb7cf2e7c9f235 32cd76a2a36328a99aa9a9248f306fbf65cef533b34422d3d4b905c33e8bae272576175eff3c1c5ab5f1c17ee7956303f716375b8c71d2ca2a84cfa93f6086c1 09a2b761cdd63986d58d21bd311ea6ba9f50c449b546348c48a22ba84875dab5e3e5946109ab9644d2f28a5c4bc363c766eaeb9fc4cc8ae125657ebd83de6526 14d9ecaf67b8c94ac3322ae60df680c2b6cb8b57da5c237d3a9cdabdca00b010bdc21b64c436efa17cb5783fbf51f543f588045849eceb90e1051d295f61418a 95216fad1e8e9329e73070a45f1d549ca0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c18663872d39f019dc350cbfaf73a0398017aa9b2faa6789e 09a2b761cdd63986d58d21bd311ea6ba0fa4ea595ab98ca05b6db4b5a524f0cfc24c449b5177ec438492e52ca9907137d45987aa526f7ebcaefc2cbd1904f036 8ae1ad83327b81dec5446a5920f1d318aa11a96fd77a05cab74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962ddf56ff53d81d427bd 21cb6a29d4b0b30d21ba0642d7d35b3451ffdabf74bf3f4cf588045849eceb90e6626fc5bfd508b16334dff5a8e8736c568101f0eaa845cf8ea88232772e9185 4cb05053dd12b0f521ba0642d7d35b340c9f3156902d2775f588045849eceb90e6626fc5bfd508b16334dff5a8e8736c568101f0eaa845cf8ea88232772e9185 09a2b761cdd639868eee1ee26f081f21957037c396f796b5025af90ddce02ede557891869bc2e855803fff23a4e2a281ce5ec34e6f8ad1ca20e65e1717a0b297 c35972971bda6cbfc2356fa0b0fe3ea9f716375b8c71d2ca7447dc705bd2b9a632f1f96ca76f178f24a8b58514063cc5773cfc1bd26698df56a4048f1e4ff032 09a2b761cdd639868eee1ee26f081f215fdb5cf0a0117bb6025af90ddce02ede557891869bc2e8553a1a9b7f4a1b1ea3ce5ec34e6f8ad1ca7f4fa8c50191d90c 021132bb3fd82585f588045849eceb90e6626fc5bfd508b16334dff5a8e8736c568101f0eaa845cf3900116365b28771ef6559fc277d4b8d420df9a063adc751 09a2b761cdd63986809e63d19e808c40706b807646b803719f37e7a110c0d30f8492e52ca9907137691018eed3b49c363b7ed36af94fd8d0e1734198eb2d5d30 05b5f1398a5d6f6906f29896cb00af16e3e5946109ab96448a6d0d3edb9c296d3b698759e0f6968715cde71e5a76569bc2356fa0b0fe3ea96004e157994bc9bf 09a2b761cdd6398671d94cdb4243f500706b807646b80371aa3deeb51b78df108ae1ad83327b81ded2bbaa26aad6c6147f96a94c9a957a0c5d43534984e52420 05b5f1398a5d6f6938e5202811de8b229aa9a9248f306fbfa019b886ca2946c45ec35ee69717b5a5974781ad152f7972184dc1300cea2a136b276ab17ad27652 5c2e262d493b312ff73e0c5051b95e15e503df2c2a48623568d4c1b330b1e1fa62d766f77596a54bf588045849eceb90e6626fc5bfd508b1d776614f460f1ceb b090b65fdd16a27f1b335ff66691221511253b9116fca4b5cc818c2e64e2441d3c991a04052eba44644126c9831a96bdb74feb6ff8076c7955ab08ba49ed7650 39b56735282d89731b335ff6669122156b74fd3a75af1db9b3eff0053075038b82b03c4529a3797d478a87bc5b8e6cf9691018eed3b49c36df42c068afe98c8a e513bba6d3228b87ac73e51ea6171029b9a376387dcea33ea1c0f782a9dccaf9c9f6c53b093b66727f70dd368fa57289ba6003231ac0493b0801900bb0d2ae74 b0fb847a3b385fda1b335ff66691221528bb17bf747c349a7bf91ca1a5006a10f588045849eceb90e6626fc5bfd508b16334dff5a8e8736c4fe6e5c7e47db8f7 a9174ed1bf108f9a0c5c216a3038c78c2ae141f64a46e45d8588cdf916f86d19e213edf528fee6b2300b06d6b098e56a3950d9f59cc9528fd38aff4e12555a5d 282e8027f6fd021a744533db3bdc064cd7dfcfdb598aef9d554e6be04a5ec8e754cc636c47659e96faca85d0862a74fb4674009031596e3afd5baaf91a42e7d3 ce28372646c1b72b8f8029c76dd5a72b644126c9831a96bdb74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962ddf56ff53d81d427bd 02673b7763e121d2184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8ca8e32446a12da7d50bd780059ff414f8 7c9acabd26c54e03f6a2b547dc976ba066c88eeb6c99df5da6f1ddb48cdca4178d1722fa3b58496691ecad6459b78f8ea076e3216a8b20ce62d766f77596a54b 7c9acabd26c54e03bf230db17611f82f66c88eeb6c99df5dc0db4b7a44834d678d1722fa3b584966c1119d53e95a4af64ebedf1affe729adabb485c8ac7a39ac 36beba41d0d291a4b1cc8ce9c0a7c4dbcd30ef1298e2828f2ca13e67bcc94ff2749d13634498f34b2228f4976daf1309c35972971bda6cbf82d021902886a9e0 7c9acabd26c54e03b585b96681e0ca9b66c88eeb6c99df5d836ccb36c8e634738d1722fa3b584966e5cfc863a8a501d624be77f172ebdc51bd6e0240e530e0d3 282e8027f6fd021a44f91394b9d9e846d7dfcfdb598aef9dd2820111558128219befd31f50da7206fe14e8ed893f8790c9f6c53b093b6672f1b3224347ba154c b895f158934e88384674009031596e3ae7b47cf3a9353d48d6c1365d95c11ec227a93decc2d57179c1fc488386db32b8e9fdfc8a753de111d38aff4e12555a5d 9479dc5c320af2ec1aed393b8b55339421a9aca16c78487ddfb89fd4996a844c8d1722fa3b584966d11416a3e67abd4b6d94ac99831e831f122d19e668be3062 547fa7df049edd5bd3ed529e2f03bd0da0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c18663872d39f019dc350cbfaf73a0398017aa9b2faa6789e 7c9acabd26c54e03dca29065f7b4a684eac8453836f1167d9fa4c4bc97a88581e2bb5bfeace0dc4a209a5091d0afa22fbc9ba1249b27d252bd6e0240e530e0d3 b4dba295799dbf1bb585b96681e0ca9b66c88eeb6c99df5ddfb89fd4996a844c9e4129bde4083afbf588045849eceb90e6626fc5bfd508b1d776614f460f1ceb 282e8027f6fd021a6263a80a123a82bfd7dfcfdb598aef9dd09f9d772f43ebef8492e52ca99071376cc173f11f5b8563f5ad3ad78240944d770dbf5b363fa50b 52d178a251a6b6d5a778ba06ffb6481ca0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c18663872d39f019dc350cbfaf73a0398017aa9b2faa6789e 66848ab3646ea9277df90e6847038987295d7e616dd35350af399d32d282acb6184dc1300cea2a1333803012812e35a27bbf3a0197757d1a10e6517c4d5c1c74 b4dba295799dbf1bcd9f9b0fe66d8ad166c88eeb6c99df5d74a45d3e091b7fad9dd87a2d3e5280a11de333fbd2e0f35df716375b8c71d2ca2a84cfa93f6086c1 9479dc5c320af2ec5c89cd247067d79021a9aca16c78487d112a23f56123a9e48d1722fa3b584966fc8cbd0336a453d86d94ac99831e831f122d19e668be3062 547fa7df049edd5b7c6a05e67fd634eea0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c18663872d39f019dc350cbfaf73a0398017aa9b2faa6789e da33f0d11a9f0f4ebf230db17611f82f66c88eeb6c99df5de7b47cf3a9353d4832a63025bcdcc99437b2d2e15ad7f246042f0c0c78bb0deb16944157eaac9744 36beba41d0d291a4df9ebaf9f2a35d54cd30ef1298e2828f7df90e6847038987e4cdac1c8a1d1b266e3f0899c50425cf107598ff023e5e6fe2ebc0dd60167d43 36258f891834800beb87848776396383ee894940744d7fd976fe71021a80bf2f2e23ba67bb505870b579c1d0cc3dc7d3644126c9831a96bde848d5f4c074f39d da33f0d11a9f0f4eeb8784877639638366c88eeb6c99df5d58ad1114986fcd033d34ea0a4263fbc88128d567d8fde99900d3e0b087c737445d43534984e52420 9479dc5c320af2eccfee2d3418fdb57721a9aca16c78487d7bdec82a4b7b53f08d1722fa3b584966e34cb4739f0740126d94ac99831e831f122d19e668be3062 547fa7df049edd5be96826b1b8137c4aa0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c18663872d39f019dc350cbfaf73a0398017aa9b2faa6789e 9479dc5c320af2ecdd40236d4888ed8d21a9aca16c78487dba5bfaa11384a59f8d1722fa3b58496619783d2f8036fcd56d94ac99831e831f122d19e668be3062 547fa7df049edd5bb41c954d84327076a0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c18663872d39f019dc350cbfaf73a0398017aa9b2faa6789e 282e8027f6fd021a05f06f9213ce83bad7dfcfdb598aef9d1257635b7fb4c541ce5ec34e6f8ad1cafb3114ec070b43c09abc853f63b3fb5a9aeb1dbca0cd0241 7bd9089c90910d476111a6a2967a6c58691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db1a4300bf221b913a1d65e1bf53966969 9479dc5c320af2ec34d8be222b1876f721a9aca16c78487d4f7687ea86dbe3318d1722fa3b584966e34cb4739f0740126d94ac99831e831f122d19e668be3062 547fa7df049edd5b27d9f7e5287cba2ca0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c18663872d39f019dc350cbfaf73a0398017aa9b2faa6789e da33f0d11a9f0f4ec12e63f53fc8b6c766c88eeb6c99df5d112a23f56123a9e48d1722fa3b584966a75b4546146326223c3f33a379f0af8a62d766f77596a54b 282e8027f6fd021af5687491f31f2924d7dfcfdb598aef9daea69d63dd36534320f664a3ff7b4a04faca85d0862a74fb4674009031596e3afd5baaf91a42e7d3 ce28372646c1b72b743bf58d1db148a3644126c9831a96bdb74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962ddf56ff53d81d427bd 02673b7763e121d2184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8ca8e32446a12da7d50bd780059ff414f8 45bb615a0113a2d76295f13f271e3dd4f45310c19b6b8ee5602264da8f44928d4c49b18e65b20125e7eefa795927f22cb124fbdd29716cfbacdab751cbf202c2 32cd76a2a36328a99889c62aee5fc834c6bc33b4ab296cf04d4c212f6c1abf84cf5d0219e0df7a9d7793c602b9feeb0dec7850cb5e2600ad9c7a4bc0de56f663 36258f891834800bcd9f9b0fe66d8ad1ee894940744d7fd976fe71021a80bf2f87ba5971c1666c6321a9aca16c78487d836ccb36c8e63473789bb4c149c0f7d2 36258f891834800b239bdbe658d21d0066c88eeb6c99df5d4f7687ea86dbe3318d1722fa3b58496619783d2f8036fcd59889c62aee5fc834ce6a500a0bc3e23b 400e963555b1a2d2dad4b7980b83d60ce7eefa795927f22cb124fbdd29716cfb2046728deb55b4a1950e8d6edabe13a34d2d6dc53bce5cb95aa5b7dadcd53e5b 53a47ce20eea766578777e4c883822d7496ee1101b7a39424ec484d93e85716ec50ef93b4e08741af588045849eceb90e6626fc5bfd508b1d776614f460f1ceb 282e8027f6fd021a95a9d5006d1ac9c1d7dfcfdb598aef9d83676253d12347c501de569537f728dffaca85d0862a74fbf42a59751c2d9c74c8871d0203ef020b 9c696fb13148990c8675a01b2db95be7c9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1dfa360badf382ef6a094882e5275efb6 da33f0d11a9f0f4ebc27f931268b406166c88eeb6c99df5d250025f01b12eac228962c68c37beadeed013b7ba2d18b82478a87bc5b8e6cf9d38aff4e12555a5d da33f0d11a9f0f4eb585b96681e0ca9b66c88eeb6c99df5d209a5091d0afa22fd267191e106d0b0d8387f45e647e26ceef1d7357d3c4e2f39d6bedf9d0034ac8 65f8ec3b931d45fecd9f9b0fe66d8ad166c88eeb6c99df5d836ccb36c8e634738d1722fa3b584966e5cfc863a8a501d66b895da7740b2625d38aff4e12555a5d da33f0d11a9f0f4ecc0121b5e20e207666c88eeb6c99df5d942409553266e8b316d68c73f74bc5565c8d68af7fe2e960609e19a3b1330370e89729e5d38ef58f 9479dc5c320af2ece68811ece2528fc321a9aca16c78487d8b3909b9b1ee98c48d1722fa3b584966fc8cbd0336a453d86d94ac99831e831f122d19e668be3062 547fa7df049edd5bd1e514cf9ee05ca5a0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c18663872d39f019dc350cbfaf73a0398017aa9b2faa6789e 81bc0cb7c12452441b335ff666912215062777163355bd154f60af2351f95502c051d21af37637adf716375b8c71d2ca7447dc705bd2b9a6b32ab536d12dcb53 abea470061b4cf4674c94f93c383e2578803136c44fdf03c12ea7294e684b8397b9253cdb3e17e06644126c9831a96bdb74feb6ff8076c7955ab08ba49ed7650 7aff1ed175018062cbf62b4d3dcda71850495b21047dc1007a2bb3bc46c04b4e478a87bc5b8e6cf9691018eed3b49c363b7ed36af94fd8d0e1734198eb2d5d30 a16523cb4c600880ac73e51ea6171029725174985eb3b1d34d745b560a9864aa2eab8f59404e32fbbfc3976bee98b06d691018eed3b49c36df42c068afe98c8a 900387b6be7bb99274c94f93c383e257d68ff0e069060e91ef1d7357d3c4e2f3644126c9831a96bdb74feb6ff8076c794d22c850cafe6d8869a81fde624533ad 32c994efcc2d922e0abfc569c2f155647ea6ad46ecf15209bca66beeb277b1607b9253cdb3e17e06644126c9831a96bdb74feb6ff8076c7955ab08ba49ed7650 d8f5a2ccd87b60eeac73e51ea6171029977c9ed6cdc69f7c55ee2ca7818ff4e6ffd414095be51912644126c9831a96bdb74feb6ff8076c7955ab08ba49ed7650 0abb8c42c110d7c574c94f93c383e257b06f7b2a5221d6a1cdc50eb41b28b6da1d28299200febf22f32a46da3bd46a365d87510856e45788d06855f06d6f53fd 75430035d97ed48aac73e51ea61710292f63ba7cec69a5ae92ebc16da04e46beffd414095be51912644126c9831a96bdb74feb6ff8076c7955ab08ba49ed7650 98b5f0d56fa74586769be4ce041f18881b695623e8d2ec72fc7f201294a05a1d28b5c8cbdfe3537fd7059c8c42854956483cf72d1898804474fb7cf2e7c9f235 f0141b5f35912e420abfc569c2f155647ea6ad46ecf15209cfcbccac057ce9367b9253cdb3e17e06644126c9831a96bdb74feb6ff8076c7955ab08ba49ed7650 0382627c5bd012d40abfc569c2f1556449ab06bccf3c5e3aa52c5d0900251b18f29bae4b68f7bfb2a10c11dc3b762f9f6a55ec42853e357f743ff23adc1a84eb 2a0dde369b0e03c9ac73e51ea6171029a294b4c9b4499e412f30647cd4a074f8cc0a4cfd13354a98646fb8d77d1a9bd0a0c7a89b875d76a7668ff86ff0a77892 b052355e65d40bda6072bbb927e75d221f5a36c0cfa2e93a622e6bb14f828842d5842d53d11b6659a54dd50435f134f9bfe7aa56cbb7750016944157eaac9744 8bf314ab8c0348996072bbb927e75d2233712e677bf821410e88ff585c7721b717db01c01a85b031d741aae16bf64f713db07fb45d793ed8809b758273603f84 afe317ae10e98155dffad4255220698bbbd6848a4bed6ce75cdcae49952477491bbe45b2adb70fc37a5aaa106641e9738c2b08ff5cc148ae11d006434ff70a7c a34eb0be5ea600af74c94f93c383e257d0e476fa0d4f54a90aa9758bb879ff7eee09f8451cbe1231710f626c2faf14a6f716375b8c71d2ca2a84cfa93f6086c1 e9dd452c4e6cfebeac73e51ea617102936c315db1f9d8b9bec8e4432708a2f10184dc1300cea2a1333803012812e35a27bbf3a0197757d1a10e6517c4d5c1c74 a3d26799f30d8e0d27881184d92232d68bb760bf7903e92ebb8309e553dbf02da9f8c600a5632a411d155fb90c9a9bd766eaeb9fc4cc8ae11a4ba722c03153cc 747e4f2a6405d9546d2aa86b77a26c95691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db1a4300bf221b913a1d65e1bf53966969 3e2f6d3b6fa1f79ec9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1dfa360badf382ef60c1cb2f0da1ca881fcd6be7a2000af83 dcfdab3db4e32d43ede29d0f5869fc33706b807646b803717f4022ad17ec791a661a51fa4c6b374154a3c6ec78dbb3aba9f8c600a5632a41dda7d25602215933 cc29c56aedd5408745b0476b0b2677a2450cb01944621787646fb8d77d1a9bd0a0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c2a9ba28f5e45e265 a3d26799f30d8e0d27881184d92232d6f5f9ed6312b8b794bb8309e553dbf02da9f8c600a5632a412ab53c80251d77034c49b18e65b2012511d006434ff70a7c 32cd76a2a36328a970c06ad4469b5f94cebdfdad9ec516f4887ff07020def09bc1fb5ea162ffd514e71f71e187584171b74feb6ff8076c7955ab08ba49ed7650 dcfdab3db4e32d433bf41dbcfedd1a73706b807646b803717f4022ad17ec791a962774806c3702bc70c06ad4469b5f94312fa97e331c1da84ae99547937d63c8 661a51fa4c6b3741de4c8491ec5adb9e644126c9831a96bdb74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962ddf56ff53d81d427bd a3d26799f30d8e0d27881184d92232d69555c9de400e3ff4bb8309e553dbf02d2552b09b2698b2f7faca85d0862a74fb691018eed3b49c36df42c068afe98c8a 5481192eeae2d9bcb37e8d7bc524479260738008e3ec23e9bd64c1cf62f7de1ee9cecb35b9656da53c43768853245e2f3c7d75eb5aa570c18f03faff22254705 6e8b426636593381d9cb531c84b2e78e691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db1a4300bf221b913a1d65e1bf53966969 94c296d774d16dc6029d261fdb11face706b807646b803717f4022ad17ec791a61c0f368e65895e727a7680140b18b02a9f8c600a5632a4124bb2947519915e1 6b895da7740b2625691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db1a4300bf221b913af248f4846b4e8d26c2c478990dc28ced a3d26799f30d8e0d27881184d92232d6f7a9cb3a3aa8fd3bbb8309e553dbf02da9f8c600a5632a41d43d8e2b52dc60dffaca85d0862a74fba0d09017c0a7e6e3 cbac94568cb7ea80af399d32d282acb6184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8c9d716709579b3adb dcfdab3db4e32d43a33cd2cacf2a506c706b807646b803717f4022ad17ec791aad422042d90c20ff70c06ad4469b5f94e3916bcf3d4f3b094ae99547937d63c8 661a51fa4c6b3741765675393dc7d125644126c9831a96bdb74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962ddf56ff53d81d427bd dcfdab3db4e32d43bba88ce0a19c8c96bb8309e553dbf02da9f8c600a5632a411b4f7fa9a4b8e3535071025688454c9ccbea7112d78cac1e41a05de3116e9b24 cfa43262ca04397ebba88ce0a19c8c96644126c9831a96bdb74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962ddf56ff53d81d427bd dcfdab3db4e32d43ede07d0c58d4f032706b807646b803717f4022ad17ec791abca82e895767d0d27f4022ad17ec791ac2725da9eb2b53c3ea4f4ffe9d39f1af a9f8c600a5632a4193ad7f2331f679c039859341766fc92cb74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962ddf56ff53d81d427bd e8ac5e09ea758be7a0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c18663872d39f019dc350cbfaf73a039872532af236d9d172b57b6cedb7a9d79e dcfdab3db4e32d43f260bf685f02b461706b807646b803717f4022ad17ec791a42584466a0744c915286be7e40403390726a141610f9030fcebceff5d226dc59 5ed2fe27f6c34366691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db1a4300bf221b913af248f4846b4e8d26c2c478990dc28ced a3d26799f30d8e0d27881184d92232d6718e8ffade3a3c48bb8309e553dbf02da9f8c600a5632a41a2551ee6b7ec08c82bdc2471723c531b74fb7cf2e7c9f235 32cd76a2a36328a970c06ad4469b5f94b06ce489a5ca8bc762c70e641415368ae382e6191d1e3e368490b79e7682309954c51e02474204001668843a96fba0b1 70c06ad4469b5f94563cdd7e1d34ebd6233b9393f3163918e7eefa795927f22cb124fbdd29716cfb2046728deb55b4a1950e8d6edabe13a3323cc4f3a5d7e023 aa3996e99201019ac9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1dfa360badf382ef60c1cb2f0da1ca881fcd6be7a2000af83 8b85e4e539255337f588045849eceb90e6626fc5bfd508b16334dff5a8e8736c568101f0eaa845cf3900116365b28771ef6559fc277d4b8d420df9a063adc751 73f5336ad93df892b5f1c17ee7956303f716375b8c71d2ca7447dc705bd2b9a632f1f96ca76f178f24a8b58514063cc5773cfc1bd26698df56a4048f1e4ff032 a13c3ebdebf2dda89f946f657c75313a706b807646b80371f883903d081a702445b0476b0b2677a2835e233e602f4a1ea95eab34c46af31de89729e5d38ef58f 1c21120900cc4a8e36396189a293dfcd706b807646b803717f4022ad17ec791a42584466a0744c91e12e7b2be99df4b145b0476b0b2677a2858904c65dd9fcbe ce133616d118868f7b4ac1d86b005a10184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8c9d716709579b3adb 0418cc75e3d7cf68710f626c2faf14a6f716375b8c71d2ca7447dc705bd2b9a632f1f96ca76f178f24a8b58514063cc5773cfc1bd26698df56a4048f1e4ff032 a3d26799f30d8e0d27881184d92232d6528864a47f84deb1bb8309e553dbf02da9f8c600a5632a415f733ff96338b1f2dad4bb70f534f24c16944157eaac9744 32cd76a2a36328a970c06ad4469b5f942787d48592327eee7e9f11aea7261d3fc1fb5ea162ffd514e71f71e187584171b74feb6ff8076c7955ab08ba49ed7650 94c296d774d16dc61a3f0583e1a3bd76706b807646b803717f4022ad17ec791a61c0f368e65895e764c58fec2fc42cd7a9f8c600a5632a41c4ca8063797fb61b 6b895da7740b2625691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db1a4300bf221b913af248f4846b4e8d26c2c478990dc28ced a3d26799f30d8e0d27881184d92232d674efa137fe2e0c89bb8309e553dbf02da9f8c600a5632a413741f88c4d16baa8ce5ec34e6f8ad1ca1cc1a996f7fda727 3855efdebcb13ff95d7d82e5a16ed00f644126c9831a96bdb74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962ddf56ff53d81d427bd be933631531f9659e7eefa795927f22cb124fbdd29716cfb2046728deb55b4a1950e8d6edabe13a34d2d6dc53bce5cb937b7b413a3c0865e2daf092be8c923c4 1c21120900cc4a8e19f3f50aa9dc900f706b807646b803717f4022ad17ec791a42584466a0744c915286be7e4040339045b0476b0b2677a2f7ba82e1f913d254 ce133616d118868f7b4ac1d86b005a10184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8c9d716709579b3adb 0418cc75e3d7cf68710f626c2faf14a6f716375b8c71d2ca7447dc705bd2b9a632f1f96ca76f178f24a8b58514063cc5773cfc1bd26698df56a4048f1e4ff032 dcfdab3db4e32d43d10aca187e10ee8f706b807646b803717f4022ad17ec791a7fc190a94cff1584c4fe171c4aa376b5a9f8c600a5632a41d45c707ab17d8b3b 2994a828cfcb8a945699c5db1d4fd476e847dda77d5f9443b74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962ddf56ff53d81d427bd d49c10eabba409d0691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db1a4300bf221b913af248f4846b4e8d26c2c478990dc28ced a13c3ebdebf2dda881d04920058e3784706b807646b80371f883903d081a702445b0476b0b2677a2367114db4850319ea95eab34c46af31de89729e5d38ef58f a3d26799f30d8e0d27881184d92232d60fa4ea595ab98ca0deaba362d68b5afa8490b79e76823099b616acb3afc2463ed3b99b01fef3c64478e91940a8e16688 7793f45490075ab3184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8ca8e32446a12da7d50bd780059ff414f8 2a6720d0591cca0540f05819e599c2c0f44496155f03ed4ff588045849eceb90e6626fc5bfd508b16334dff5a8e8736c568101f0eaa845cf8ea88232772e9185 a3d26799f30d8e0d27881184d92232d6b5c9d0c1558cfdd3bb8309e553dbf02da9f8c600a5632a41737375a8f10d4240faca85d0862a74fb1e10c57f3fa5c4ab c8fe38984326176d6d35d8485846d699e7eefa795927f22cb124fbdd29716cfb2046728deb55b4a1950e8d6edabe13a34d2d6dc53bce5cb95aa5b7dadcd53e5b a13c3ebdebf2dda8dab4c24b55761cda706b807646b80371f883903d081a70248490b79e7682309988d781a019b79b2cf357d2495314aea2abb485c8ac7a39ac 1c21120900cc4a8eb4ce929101f95640a665d0fac02ce03ed9e82c4170fcde6c7c9c7b2e8cc681a533f224eaf10e8b80b37e8d7bc52447928c38e2b886ad00f4 2c671ee0eeadba6424fdfd9bb2e10b07a0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c18663872d39f019dc350cbfaf73a0398017aa9b2faa6789e 099a86bb88e9bfe31aabf11df8bc7d16d80baa145e5a06b5b0daf6fdf32567c9447da73140e1fc0c72d03a382a5bfff6644126c9831a96bde848d5f4c074f39d 81a9746d786d11d6818d73f79dee5cb4f418b0d160a3681f3dd6b421a8a3725817181a2338ab2aebfaea4b98a48f84e01933952b4dcad44ce0c8f92b9e893480 0805c9bc4a8c6e821b335ff666912215dfcb0cac625c1873016f27e7fe377c06dce40a334853b6026620d3f6c560089e644126c9831a96bde848d5f4c074f39d 224fe9df4b4ef4f274c94f93c383e25734ea5a4105092647687fb7a3cd2ce4a4c841ee37f63fbd9f789bb4c149c0f7d2f588045849eceb90e1051d295f61418a a1642ab168aedbca706b807646b80371cff3aa4dfc172ba9fe8065cdb5f5f8ce9d8a6e2e9f780fbd77f292f81f948d5c30c576d2a5a01b7b87e4581c8c748cc7 17cb17e37c3b5d6d55136b92d0559ec4e71f71e187584171b74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962ddf56ff53d81d427bd 2dbdd1f19d21f2c6f45310c19b6b8ee5cdbea1dc33dbc9f7478a87bc5b8e6cf9691018eed3b49c363b7ed36af94fd8d0b677be974a8015938337dc0ba5af8d26 e32412d8e97ecf0cf45310c19b6b8ee59a410bc651fe35dc62d766f77596a54bf588045849eceb90e6626fc5bfd508b16334dff5a8e8736c4fe6e5c7e47db8f7 dbf12f0360092c452fbfcc2b872ff946ed93a0256a6d844d749d13634498f34bc9322890ded6647b3e79fe16148a605c0bf1a37a93ab80b462b84e5bac7fe806 012c1a3f018cd4280f4d3610e546ee8e184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8c9d716709579b3adb cc1384a8203fb2628cf29811b0e6da3536fb420f5a067a1ef588045849eceb90e6626fc5bfd508b16334dff5a8e8736c568101f0eaa845cf8ea88232772e9185 846dad09021724e51b335ff66691221555e91b4e96b9929fcffa2bb36a30977a184dc1300cea2a1333803012812e35a27bbf3a0197757d1a10e6517c4d5c1c74 240cf6a83072ff1a38a199ba1268a68172d2a53fbeaf00843cafa1326cfe18744842ef87c436514df49fb174d085ee41608e5066341ff6bd6004e157994bc9bf c1dd9c389b868458e0c9cc74d563e9795556ffb9d7663e42817afbf1a1467aacfeff6bfa8393f3f8f8c60dfea3fcb448617d098114966bf404fdd277fd95ba23 2b1f6b713203d99458b58148317651d2f716375b8c71d2ca7447dc705bd2b9a632f1f96ca76f178f24a8b58514063cc5773cfc1bd26698df56a4048f1e4ff032 42cad0d02e943b3cf45310c19b6b8ee547f0b089656f266e62d766f77596a54bf588045849eceb90e6626fc5bfd508b16334dff5a8e8736c4fe6e5c7e47db8f7 0d5aef5328a6b0bcac73e51ea6171029067f4902092fb36aa1b7be63766c6afbca844e5556e86be4a0c7a89b875d76a7b0718e2bf61f10a79c4d3d62406ead54 2a3fd364408caf246f52d5ca6e23dacfc8fb14f6ca5b8e2bd388e23ae3aabe19e7eefa795927f22cb124fbdd29716cfb2046728deb55b4a198671645a8a8b509 $CDNENCFINISH .ENDS ZXLD1371_PSPICE *$ .subckt ZXLD1371_FOR_HIERARCHY_S7 1 2 3 4 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf ca116cfd9f503f5a31820e631d1d1d74bc43870b2068c893691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db99279120ce8e2a4f 22fa704315324fee6f31076d2b37e96baa35006d782c6ce9c9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1683daeb2b137fd4d 1e7e75f62a07f7b1bbcb463bf6330e44b8257e7c370c44b80ffb76e2ddf4497b2661590815226ffb5d0d2970852fcd9175a72dcf08b05ada72e8a5ba6eb8ba83 $CDNENCFINISH .ends ZXLD1371_FOR_HIERARCHY_S7 *$ .subckt ZXLD1371_FOR_HIERARCHY_S4 1 2 3 4 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf cca5ca7cd3bb954631820e631d1d1d743397604f987b60be691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db99279120ce8e2a4f c89815736fd06a736f31076d2b37e96baa35006d782c6ce9c9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1683daeb2b137fd4d 1e7e75f62a07f7b1bbcb463bf6330e44d3c3547c91af769e0ffb76e2ddf4497b658b10ab5642c9074b56e07cb2a0a4fbe2da13bf6ad1ec6e8a8fe36961566219 $CDNENCFINISH .ends ZXLD1371_FOR_HIERARCHY_S4 *$ .subckt ZXLD1371_FOR_HIERARCHY_S1 1 2 3 4 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 44f117741689d59131820e631d1d1d749e35700c7913e939691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db99279120ce8e2a4f 3c76beba9b808c126f31076d2b37e96baa35006d782c6ce9c9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1683daeb2b137fd4d 1e7e75f62a07f7b1bbcb463bf6330e447b3ba2fd65dbf9050ffb76e2ddf4497b2661590815226ffb5b32e22ee2762aa4de796a07e247501c3e91162e7d1bf20b $CDNENCFINISH .ends ZXLD1371_FOR_HIERARCHY_S1 *$ .subckt ZXLD1371_FOR_HIERARCHY_S5 1 2 3 4 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf a41eff5afcadbe0431820e631d1d1d74cce714c3daebb9ef691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db99279120ce8e2a4f 0d00147a4ec8159a6f31076d2b37e96baa35006d782c6ce9c9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1683daeb2b137fd4d 1e7e75f62a07f7b1bbcb463bf6330e444ffca53f33c7306d0ffb76e2ddf4497b2661590815226ffb5b32e22ee2762aa4de796a07e247501c3e91162e7d1bf20b $CDNENCFINISH .ends ZXLD1371_FOR_HIERARCHY_S5 *$ .subckt ZXLD1371_FOR_HIERARCHY_S9 1 2 3 4 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 0d4fba81348870d631820e631d1d1d74525a947d4222b598691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db99279120ce8e2a4f 7e9baaa9719bd1f96f31076d2b37e96baa35006d782c6ce9c9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1683daeb2b137fd4d 1e7e75f62a07f7b1bbcb463bf6330e44ccbbb1088960694e0ffb76e2ddf4497b56602f79b0c467cddacf708331606702dd351453c45c7fd75065ec6d2c8c5479 dc224b6b76a2bc94c9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1dfa360badf382ef60c1cb2f0da1ca881fcd6be7a2000af83 $CDNENCFINISH .ends ZXLD1371_FOR_HIERARCHY_S9 *$ .subckt FREQ_HYS_CONTROL_freq_S5 1 2 3 4 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 725de3fcbb693074bc27f931268b4061ffb40d9244a39c7b6a68ac505a5ecff2c88548d8e960e4b4f716375b8c71d2ca7447dc705bd2b9a6b32ab536d12dcb53 2b807af9ad33acd227765b42d27caeee0fc456520f02d491ed53b4ce5c20ee27b74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b673939e13ac51b349 1e7e75f62a07f7b1bbcb463bf6330e449700bce0c7d12200b469a8d685c038374bf43f00b3546d6cc905474b9732df37ff411e42e94343f8a5ee8a3eda0c234c 768e04b30687cfb2f588045849eceb90e6626fc5bfd508b16334dff5a8e8736c568101f0eaa845cf3900116365b28771ef6559fc277d4b8d420df9a063adc751 $CDNENCFINISH .ends FREQ_HYS_CONTROL_freq_S5 *$ .subckt FREQ_HYS_CONTROL_freq_S4 1 2 3 4 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 725de3fcbb693074cc0121b5e20e2076ffb40d9244a39c7b6a68ac505a5ecff253d628d3aa8f23f0f716375b8c71d2ca7447dc705bd2b9a6b32ab536d12dcb53 2b807af9ad33acd20eac5929827abc620fc456520f02d491ed53b4ce5c20ee27b74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b673939e13ac51b349 1e7e75f62a07f7b1bbcb463bf6330e444bc03f093be0dc18b469a8d685c0383732325ad26af3c92db16935f5527df49e8f182a59499ce6406c15b30d8f543ada 816422455737d21b184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8ca8e32446a12da7d50bd780059ff414f8 $CDNENCFINISH .ends FREQ_HYS_CONTROL_freq_S4 *$ .subckt FREQ_HYS_CONTROL_freq_S2 1 2 3 4 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 725de3fcbb693074239bdbe658d21d00ffb40d9244a39c7b6a68ac505a5ecff2490cb4e483ee24adf716375b8c71d2ca7447dc705bd2b9a6b32ab536d12dcb53 2b807af9ad33acd23a40f0eb405719560fc456520f02d491ed53b4ce5c20ee27b74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b673939e13ac51b349 1e7e75f62a07f7b1bbcb463bf6330e440322e8d4ef436925b469a8d685c038370cf9f34ef7439c7d45316724feefc5c28f182a59499ce6406c15b30d8f543ada 816422455737d21b184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8ca8e32446a12da7d50bd780059ff414f8 $CDNENCFINISH .ends FREQ_HYS_CONTROL_freq_S2 *$ .subckt FREQ_HYS_CONTROL_freq_S7 1 2 3 4 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 725de3fcbb693074bf230db17611f82fffb40d9244a39c7b6a68ac505a5ecff233cad0128b74623ff716375b8c71d2ca7447dc705bd2b9a6b32ab536d12dcb53 2b807af9ad33acd2fae8f259c6c39e8a0fc456520f02d491ed53b4ce5c20ee27b74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b673939e13ac51b349 1e7e75f62a07f7b1bbcb463bf6330e44f29f1bd798b90240b469a8d685c038374bf43f00b3546d6cecd4cdb03700be1f0fce1330368f375ef1481883b3c827f1 5fe9ab614b8532c6691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db1a4300bf221b913af248f4846b4e8d26c2c478990dc28ced $CDNENCFINISH .ends FREQ_HYS_CONTROL_freq_S7 *$ .subckt FREQ_HYS_CONTROL_freq_S6 1 2 3 4 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 725de3fcbb693074c12e63f53fc8b6c7ffb40d9244a39c7b6a68ac505a5ecff27ac7164c6d09e590f716375b8c71d2ca7447dc705bd2b9a6b32ab536d12dcb53 2b807af9ad33acd23284dbb5b24063b50fc456520f02d491ed53b4ce5c20ee27b74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b673939e13ac51b349 1e7e75f62a07f7b1bbcb463bf6330e4451f6f2e2c182f951b469a8d685c0383732325ad26af3c92db16935f5527df49e8f182a59499ce6406c15b30d8f543ada 816422455737d21b184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8ca8e32446a12da7d50bd780059ff414f8 $CDNENCFINISH .ends FREQ_HYS_CONTROL_freq_S6 *$ .subckt FREQ_HYS_CONTROL_freq_S3 1 2 3 4 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 725de3fcbb693074eb87848776396383ffb40d9244a39c7b6a68ac505a5ecff223ed7a9eec21b7f2f716375b8c71d2ca7447dc705bd2b9a6b32ab536d12dcb53 2b807af9ad33acd211ae75f02889d2920fc456520f02d491ed53b4ce5c20ee27b74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b673939e13ac51b349 1e7e75f62a07f7b1bbcb463bf6330e443f4a0cd3d8ecd961b469a8d685c038370cf9f34ef7439c7d45316724feefc5c28f182a59499ce6406c15b30d8f543ada 816422455737d21b184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8ca8e32446a12da7d50bd780059ff414f8 $CDNENCFINISH .ends FREQ_HYS_CONTROL_freq_S3 *$ .subckt ZXLD1371_FOR_HIERARCHY_S3 1 2 3 4 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 49437a5c2c000e5531820e631d1d1d7451c16968e1146dc5691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db99279120ce8e2a4f 196545b3a77859896f31076d2b37e96baa35006d782c6ce9c9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1683daeb2b137fd4d 1e7e75f62a07f7b1bbcb463bf6330e449fca2d09a1602b870ffb76e2ddf4497b2661590815226ffb5d0d2970852fcd91e7e145aac8e3e7699d637f5014d15567 $CDNENCFINISH .ends ZXLD1371_FOR_HIERARCHY_S3 *$ .subckt ZXLD1371_FOR_HIERARCHY_S2 1 2 3 4 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf c21144fd15b2c61331820e631d1d1d7423f284e2e346bfb8691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db99279120ce8e2a4f e07b7a6acd4bf43c6f31076d2b37e96baa35006d782c6ce9c9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1683daeb2b137fd4d 1e7e75f62a07f7b1bbcb463bf6330e44eff574bcdcb677aa0ffb76e2ddf4497b2661590815226ffb954d83117570d624bedd4f0e0429e49f7c4bbf5b95fbb5a2 $CDNENCFINISH .ends ZXLD1371_FOR_HIERARCHY_S2 *$ .subckt ZXLD1371_FOR_HIERARCHY_S8 1 2 3 4 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 48cad54cbc66f42d31820e631d1d1d740e2409c315f54dec691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db99279120ce8e2a4f e65d04c3f5d7c4236f31076d2b37e96baa35006d782c6ce9c9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1683daeb2b137fd4d 1e7e75f62a07f7b1bbcb463bf6330e44a0cccacb04419cb30ffb76e2ddf4497bde068206158253e41090d0879c58eb702947f67be37eddb2d38aff4e12555a5d $CDNENCFINISH .ends ZXLD1371_FOR_HIERARCHY_S8 *$ .subckt FLAG_AND_STATUS_STATUS_FLAG_S1 1 2 3 4 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf cfa43262ca04397ebba88ce0a19c8c96706b807646b80371180f9852cfb962b0a383dc18dcb615b7bba88ce0a19c8c96691018eed3b49c36df42c068afe98c8a 2075146148d4b5070b96a7f211b663c6cd9f9b0fe66d8ad19fdd4d3bdfe20cf0691018eed3b49c363b7ed36af94fd8d0b677be974a8015938337dc0ba5af8d26 1e7e75f62a07f7b1bbcb463bf6330e4470c06ad4469b5f947053772909f75e89fb3b1a8334015d62d1c429fd2f3b2883fd2de4c0061ef81a9adc56f03a8d243c 56d61c3bc288fdfab3ae07e46b54f215a0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c18663872d39f019dc350cbfaf73a0398017aa9b2faa6789e $CDNENCFINISH .ends FLAG_AND_STATUS_STATUS_FLAG_S1 *$ .SUBCKT COMPARATOR IN+ IN- OUT PARAMS: DELAY=10n $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 66905336f9365357c6cd6456b373c3f13695a267d63dfaeb5708e23ac33f007982c30b6978092afa172cac7b9698ef38691018eed3b49c36df42c068afe98c8a 16288721619f9c8b73e70156d3cd9e32ba7f00f779fc266112e28b77a3176d96f3acf00b7a00a5d9a0c7a89b875d76a7b0718e2bf61f10a79c4d3d62406ead54 6a7043c1c76bf8115801d29f353ff668c9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1dfa360badf382ef6a094882e5275efb6 $CDNENCFINISH .ENDS COMPARATOR *$ .SUBCKT AND_2 A B Y $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 10efb0b13c2f06ffcd275293805a1df167b1d69fd012a0368265dc80b7e0d46e0117c329126d1ef51031098785dc58b6c2356fa0b0fe3ea96004e157994bc9bf 17e4597d7405ff3c2f248600004a4f45184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8c9d716709579b3adb fd08d4c148850df0085e1afd0064919bf716375b8c71d2ca7447dc705bd2b9a632f1f96ca76f178f24a8b58514063cc5773cfc1bd26698df56a4048f1e4ff032 $CDNENCFINISH .ENDS AND_2 *$ .SUBCKT AND_3 A B C Y $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 10efb0b13c2f06ffcd275293805a1df15414ce0c3c28bd7f5b09636c3bdb66729bb98c81884b404e9ab688292ff1c0c1ccd6f3cde728099eb71d6b06b8085e19 17e4597d7405ff3c2f248600004a4f45184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8c9d716709579b3adb fd08d4c148850df0085e1afd0064919bf716375b8c71d2ca7447dc705bd2b9a632f1f96ca76f178f24a8b58514063cc5773cfc1bd26698df56a4048f1e4ff032 $CDNENCFINISH .ENDS AND_3 *$ .SUBCKT OR_2 A B Y $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 10efb0b13c2f06ffcd275293805a1df15414ce0c3c28bd7fe0ca60defdf7d1449bb98c81884b404e3e10a24a415fea9ce71f71e187584171e848d5f4c074f39d 17e4597d7405ff3c2f248600004a4f45184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8c9d716709579b3adb fd08d4c148850df0085e1afd0064919bf716375b8c71d2ca7447dc705bd2b9a632f1f96ca76f178f24a8b58514063cc5773cfc1bd26698df56a4048f1e4ff032 $CDNENCFINISH .ENDS OR_2 *$ .SUBCKT OR_3 A B C Y $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 10efb0b13c2f06ffcd275293805a1df15414ce0c3c28bd7fe0ca60defdf7d1449bb98c81884b404e540b35c06706fc31ccd6f3cde728099eb71d6b06b8085e19 17e4597d7405ff3c2f248600004a4f45184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8c9d716709579b3adb fd08d4c148850df0085e1afd0064919bf716375b8c71d2ca7447dc705bd2b9a632f1f96ca76f178f24a8b58514063cc5773cfc1bd26698df56a4048f1e4ff032 $CDNENCFINISH .ENDS OR_3 *$ .SUBCKT BUFFER IN OUT $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 66905336f9365357c6cd6456b373c3f1dbf0264b29e4cbf244656e81b84a3fc43e10a24a415fea9ce71f71e187584171b74feb6ff8076c7955ab08ba49ed7650 16288721619f9c8b73e70156d3cd9e3236806a8e381bf9a0b74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962ddf56ff53d81d427bd 6a7043c1c76bf811fa1447639072c48ac9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1dfa360badf382ef6a094882e5275efb6 $CDNENCFINISH .ENDS BUFFER *$ .SUBCKT BUFFER_DELAY IN OUT PARAMS: DELAY=10n $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf f8547e868ffe926371707ca6c7cdc2c0db8456fb9fc0e60ca344273ac7c053539894c1140acaefeda0c7a89b875d76a7b0718e2bf61f10a79c4d3d62406ead54 6a3db1adc01f2d0736806a8e381bf9a0b74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962dd61e0a440bad77e3138b871d3d163c946 d60bc892fb1b4da34d01e0f129090a713dfc58e2232c84d7e7eefa795927f22cb124fbdd29716cfb2046728deb55b4a1950e8d6edabe13a3323cc4f3a5d7e023 f11d6a2c6927773428f84a1a2d7ca9633291f8ae48f5b6faccd6f3cde728099e8ee54616d1c590f4c9f6c53b093b66727f70dd368fa5728963912ffecb55b6d8 $CDNENCFINISH .ENDS BUFFER_DELAY *$ .SUBCKT INVERTER IN OUT $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 66905336f9365357c6cd6456b373c3f1dbf0264b29e4cbf244656e81b84a3fc40cf393e03c403d23e71f71e187584171b74feb6ff8076c7955ab08ba49ed7650 16288721619f9c8b73e70156d3cd9e3236806a8e381bf9a0b74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962ddf56ff53d81d427bd 6a7043c1c76bf811fa1447639072c48ac9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1dfa360badf382ef6a094882e5275efb6 $CDNENCFINISH .ENDS INVERTER *$ .MODEL D_IDEAL D $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 75eac7fe7be88fbd8f93d26d6d7158edf588045849eceb90e6626fc5bfd508b16334dff5a8e8736c568101f0eaa845cf3900116365b287716165f3a5d711faa4 $CDNENCFINISH *$ .MODEL D_LED D $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 05b7e48834d14dc5a0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c18663872d39f019dc350cbfaf73a039872532af236d9d172b57b6cedb7a9d79e $CDNENCFINISH *$ .SUBCKT COMP_HYS IN+ IN- OUT PARAMS: HYS=100m $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 66905336f9365357c6cd6456b373c3f1dbf0264b29e4cbf2ab2e0bc08da7b2652a0d293edc0e45fbf454f969ffd39687bf450df4c4e9e23df8d564b4b43d4a8b 16288721619f9c8b73e70156d3cd9e3236806a8e381bf9a0b74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962ddf56ff53d81d427bd 6a7043c1c76bf811ac64abca1fecc7e1e847dda77d5f9443b74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962ddf56ff53d81d427bd $CDNENCFINISH .ENDS COMP_HYS *$ .MODEL symbol_name_d d $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf b6947b007d81578c2dfb58a8d563abc3f588045849eceb90e6626fc5bfd508b16334dff5a8e8736c568101f0eaa845cf3900116365b287716165f3a5d711faa4 $CDNENCFINISH *$ .model symbol_name_nmos nmos *$ .model symbol_name_bjt npn *$ .SUBCKT OPAMP IN+ IN- OUT PARAMS: POLE=100k VMAX=5 VMIN=0 GAIN=10000 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 3c22fc7bf920393e42980fba0f39412f3693428137f342bac9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1683daeb2b137fd4d d1d3a87084f277dc2fe9793711afa1c8e7eefa795927f22cb124fbdd29716cfb2046728deb55b4a1950e8d6edabe13a34d2d6dc53bce5cb95aa5b7dadcd53e5b 79f33636374221840efca1f16b0b0c4c3693428137f342bac9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1683daeb2b137fd4d 4c899a551cd7061512a1677418d3eea3e7eefa795927f22cb124fbdd29716cfb2046728deb55b4a1950e8d6edabe13a34d2d6dc53bce5cb95aa5b7dadcd53e5b d7072740a938f0e72752c8207c4277f84f9b01dedaec6f67c4b176bd7b03555bc9f6c53b093b66727f70dd368fa57289ba6003231ac0493b0801900bb0d2ae74 425c9b52d84437faed112ed3066b88085a8d2d705d2688894223460450a363bd9d521bfb0940593fa0c7a89b875d76a7b0718e2bf61f10a79c4d3d62406ead54 1faea247e1a8c1555afff61ed7f1575cc9ea4b833c89b58ac9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1683daeb2b137fd4d b211161c561aa8ac73e70156d3cd9e3236806a8e381bf9a0b74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962ddf56ff53d81d427bd ff2f30a0f5680561a8b2bab6b462538002e6d7b91a055bf47df3b84ad0c4ee9bc9f6c53b093b66727f70dd368fa57289ba6003231ac0493b0801900bb0d2ae74 $CDNENCFINISH .ENDS OPAMP *$ .SUBCKT SR_LATCH S R Q Qb $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 3ff62270067d0a2acd275293805a1df15414ce0c3c28bd7fe83384dc37890adeef1c3670504e0551f3c5bb9f3f22721496d6f86ec564aabc82d021902886a9e0 a7cbdf8ef8369f02abcd5bc418da0bde184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8c9d716709579b3adb b521439d911db4ae985fd30f1da54348f716375b8c71d2ca7447dc705bd2b9a632f1f96ca76f178f24a8b58514063cc5773cfc1bd26698df56a4048f1e4ff032 b9714e9f0185ebe0c3fa3d1e401a4503979added4bba322bd4f2da227571b4d2d5df8edfc52ef08bf588045849eceb90e6626fc5bfd508b1d776614f460f1ceb ff7b9cdb444d3489f5af95f73630db59f588045849eceb90e6626fc5bfd508b16334dff5a8e8736c568101f0eaa845cf3900116365b287716165f3a5d711faa4 1054010ec6d491bee18a20b319ef4d27a0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c18663872d39f019dc350cbfaf73a0398017aa9b2faa6789e $CDNENCFINISH .ENDS SR_LATCH *$ *TITLE=AL8807 MACROMODEL *ORIGIN=DZSL_AG_GS *SIMULATOR=DIODES, SIMETRIX and PSPICE *DATE=17th Jan 2013 *VERSION=1 *PIN_ORDER 1:SW, 2:GND, 3:CTRL, 4:SET, 5:VIN * * This model is intended for feasibility study of application * design. It is expected that it will not accurately represent * the device real performance. However some important features * of the device are modelled approximately. * The model does not include effects of temperature or self-heating. * Testing of prototype hardware and optimisation on the bench * is always required before production build. * * NOTE: set RELTOL=1E-5 for clean switching waveform * .subckt AL8807 10 26 13 20 18 * Connections SW GND CTRL SET VIN * pins SOT23 1 2 3 4 5 * * Block 1: Vref Generator * input is V(18)-V(26) *required input parameters .param VIL1=0.7 VIH1=3.5 VOL1=0 VOH1=2.5 ; low and high limits of input and output .param MUL1=0.1 MUH1=0.05 ; low and high curve error *calculations .param KL1={MUL1*tanh((VIH1-VIL1)/MUL1)} KH1={MUH1*tanh((VIH1-VIL1)/MUH1)} .param SL1={(VOH1-VOL1)/(VIH1-VIL1-KL1-KH1)} ;gain slope E11 14 26 value={min(max(VOL1+SL1*(V(18)-V(26)-VIL1-MUL1*tanh((V(18)-V(26)-VIL1)/MUL1) + -MUH1*tanh((V(18)-V(26)-VIH1)/MUH1)-KH1),VOL1),VOH1)} R4 14 13 50k * Block 2: CTRL limiter * tanh limiter, type 1, input nodes 13 and 26, outputs 12 and 26 .param VIH2=2.5 VOH2=2.5 ;high limits of input and output .param MU2=0.001 ; curve error .param SL2={VOH2/VIH2} ;gain slope E21 12 26 value={SL2*min(V(13)-V(26)-MU2*(1+tanh((V(13)-V(26)-VIH2-MU2)/MU2)),VOH2)} * Block 3: CTRL lockout with hysteresis * R8 12 adj_lockout 1000 I1 12 adj_lockout 100uA R31 adj_lockout 31 1k C31 31 26 10p S4 adj_lockout 12 31 26 S_4 .model S_4 VSWITCH Roff=10e6 Ron=1 Voff=505mV Von=495mV S5 21 26 31 26 S_5 .MODEL S_5 VSWITCH Roff=10e6 Ron=100 Voff=501mV Von=499mV * Block 4: UVLO with hysteresis* E41 41 26 value={0.5*(1+tanh(1e3*(V(43)-V(18)+5.7)))} R41 41 42 1k C41 42 26 20p R42 42 43 800k R43 43 26 200k S41 21 26 42 26 S_41 .MODEL S_41 VSWITCH Roff=1e6 Ron=100 Voff=0.4 Von=0.6 * Block 5: Current Sense Comparator* G51 26 8 18 20 1m ; input amplifier C51 26 20 3p ; input capacitance * SET input current; asymptote input nodes 20 and 26, outputs 20 and 26 .param xx5=5 yy5=16u nn5=32;input corner, output limit, asymptote power .param aa5={xx5**nn5} G52 20 26 value={yy5*(V(20)-V(26))/(aa5+(V(20)-V(26))**nn5)**(1/nn5)} R51 26 9 10.417k R52 9 8 20.833k S51 9 26 23 26 S_51 .MODEL S_51 VSWITCH Roff=10e6 Ron=1.0 Voff=2.5V Von=2.8V C52 8 26 0.5p G53 21 26 value={0.01*tanh(100*(V(8)-V(12)))} ;comparator C54 21 26 1f V3 24 26 700mV D8 24 21 Dclamp V4 22 26 8V D9 21 22 Dclamp * Block 6: Comp Delay and gate driver* R64 21 63 10Meg ; input filter with C61 C61 63 26 0.0015p ; G4 61 25 Value={0.1*(max(V(63)-V(25)-0.5,0))**2*(V(61)-V(25))} G5 25 62 Value={0.1*(max(V(25)-V(63)-0.5,0))**2*(V(25)-V(62))} R66 61 25 10meg R67 25 62 10meg R61 18 61 1.2 R62 62 26 1.2 R63 25 26 10k R65 25 64 1 ; driver current sense R13 23 64 330 ; output resistance-1 ohm C6 26 23 25f * Block 7: Output NMOS * S8 11 71 23 71 S_8 .MODEL S_8 VSWITCH Roff=10e6 Ron=0.25 Voff=2.5V Von=2.8V R72 11 10 50m ; on resistance = R72 + R73 + Ron(S8) R73 71 26 50m C5 11 71 100p C71 23 71 40p C72 11 23 15p * Block 8: Supply Current * G81 18 26 Value={(300u*(V(14)-V(26))/VOH1)+0.6u*(V(18)-V(26))} * Block 9: Protection diodes D91 26 10 D_1 ;SW D92 26 18 D_1 ;VIN D93 26 13 D_2 ;CTRL D94 18 20 D_2 ;SET forward D95 20 18 D_2 ;SET reverse .model Dclamp D Is=2.682n N=1.836 Rs=.5664 Ikf=44.17m Cjo=4p M=.3333 Vj=.5 .model D_1 D IS=1e-14 BV=40 .model D_2 D IS=1e-14 BV=6.5 .ends AL8807 * ===================================================================== * * (c) 2013 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 4949 Hedgcoxe Road, Suite 200, Plano, TX 75024, USA * *TITLE=AL8807A MACROMODEL *ORIGIN=DZSL_AG_GS *SIMULATOR=DIODES, SIMETRIX and PSPICE *DATE=1st Feb 2013 *VERSION=1 *PIN_ORDER 1:SW, 2:GND, 3:CTRL, 4:SET, 5:VIN * * This model is intended for feasibility study of application * design. It is expected that it will not accurately represent * the device real performance. However some important features * of the device are modelled approximately. * The model does not include effects of temperature or self-heating. * Testing of prototype hardware and optimisation on the bench * is always required before production build. * * NOTE: set RELTOL=1E-5 for clean switching waveform * .subckt AL8807A 1 2 3 4 5 * Connections SW GND CTRL SET VIN * pins SOT23 1 2 3 4 5 * * Block 1: Vref Generator * input nodes 5 and 2, outputs 11 and 2 .param VIL1=0.8 VOL1=0 VIH1=3.45 VOH1=2.5 ;high and low limits of input and output .param MUH1=0.05 MUL1=0.1 ; high and low curve error .param SL1={(VOH1-VOL1)/(VIH1-VIL1)} ; gain slope E11 11 2 value={min(max(VOL1+SL1*(V(5)-V(2)-VIL1+MUL1*(1-tanh((V(5)-V(2)-VIL1+MUL1)/MUL1)) + -MUH1*(1+tanh((V(5)-V(2)-VIH1-MUH1)/MUH1))) ,VOL1),VOH1)} R11 11 3 50k * Block 2: CTRL limiter * input nodes 3 and 2, outputs 21 and 2 .param VIL2=0 VOL2=0 VIH2=2.5 VOH2=2.5 ;high and low limits of input and output .param MUH2=0.001 MUL2=0.2 ; high and low curve error .param SL2={(VOH2-VOL2)/(VIH2-VIL2)} ; gain slope E21 21 2 value={min(max(VOL2+SL2*(V(3)-V(2)-VIL2+MUL2*(1-tanh((V(3)-V(2)-VIL2+MUL2)/MUL2)) + -MUH2*(1+tanh((V(3)-V(2)-VIH2-MUH2)/MUH2))) ,VOL2),VOH2)} * Block 3: CTRL lockout with hysteresis * not used * Block 4: UVLO with hysteresis* E41 41 2 value={0.5*(1+tanh(1e3*(V(43)-V(5)+5.7)))} R41 41 42 1k C41 42 2 20p R42 42 43 800k R43 43 2 200k S41 53 2 42 2 S_41 .MODEL S_41 VSWITCH Roff=1e6 Ron=100 Voff=0.4 Von=0.6 * Block 5: Current Sense Comparator* G51 2 51 5 4 1m ; input amplifier C51 2 4 3p ; input capacitance * SET input current; asymptote input nodes 4 and 2, outputs 4 and 2 .param xx5=5 yy5=16u nn5=32;input corner, output limit, asymptote power .param aa5={xx5**nn5} G52 4 2 value={yy5*(V(4)-V(2))/(aa5+(V(4)-V(2))**nn5)**(1/nn5)} R51 2 52 10.417k R52 52 51 20.833k S51 52 2 66 2 S_51 .MODEL S_51 VSWITCH Roff=10e6 Ron=1.0 Voff=2.5V Von=2.8V C52 51 2 0.5p G53 53 2 value={0.01*tanh(100*(V(51)-V(21)))} ;comparator C54 53 2 1f V51 54 2 700mV D51 54 53 Dclamp V52 55 2 8V D52 53 55 Dclamp * Block 6: Comp Delay and gate driver* R64 53 63 10Meg ; input filter with C61 C61 63 2 0.0015p ; G61 61 65 Value={0.1*(max(V(63)-V(65)-0.5,0))**2*(V(61)-V(65))} G62 65 62 Value={0.1*(max(V(65)-V(63)-0.5,0))**2*(V(65)-V(62))} R66 61 65 10meg R67 65 62 10meg R61 5 61 1.2 R62 62 2 1.2 R63 65 2 10k R65 65 64 1 ; driver current sense R68 66 64 330 ; output resistance-1 ohm C62 2 66 25f * Block 7: Output NMOS * S71 72 71 66 71 S_71 .MODEL S_71 VSWITCH Roff=10e6 Ron=0.25 Voff=2.5V Von=2.8V R72 72 1 50m ; on resistance = R72 + R73 + Ron(S71) R73 71 2 50m C73 72 71 100p C71 66 71 40p C72 72 66 15p * Block 8: Supply Current * G81 5 2 Value={(300u*(V(11)-V(2))/VOH1)+0.6u*(V(5)-V(2))} * Block 9: Protection diodes D91 2 1 D_1 ;SW D92 2 5 D_1 ;VIN D93 2 3 D_2 ;CTRL D94 5 4 D_2 ;SET forward D95 4 5 D_2 ;SET reverse .model Dclamp D Is=2.682n N=1.836 Rs=.5664 Ikf=44.17m Cjo=4p M=.3333 Vj=.5 .model D_1 D IS=1e-14 BV=40 .model D_2 D IS=1e-14 BV=6.5 .ends AL8807A * ===================================================================== * * (c) 2013 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 4949 Hedgcoxe Road, Suite 200, Plano, TX 75024, USA **$ENCRYPTED_LIB **$INTERFACE *$ .SUBCKT ZXLD1371_PSPICE GATE ADJ REF GI ISIM VIN PWM SGND STATUS + VAUX SHP PGND FLAG TADJ NC1 NC2 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 394197bedeb77a716f52d5ca6e23dacf5f77689faa8a663fbc39eed45909606b00d3e0b087c73744c9f6c53b093b66727f70dd368fa5728963912ffecb55b6d8 04f5acd939422ec02fbfcc2b872ff9461d45c8eb53f8a29c749d13634498f34bc9322890ded6647b56be7388bb4ba8853543ca07c959008c54d5980f69aa986e 5316fc9fe4e05facf588045849eceb90e6626fc5bfd508b16334dff5a8e8736c568101f0eaa845cf3900116365b28771ef6559fc277d4b8d420df9a063adc751 ddf70eae3b592905ac73e51ea6171029b9eabc28f38b49586ae3f463f161071fbfd58a4b12fceb5d00d3e0b087c73744c9f6c53b093b6672f1b3224347ba154c e0bee0f3fadd67246f52d5ca6e23dacf6ae3f463f161071f2da085ac1302fd51478a87bc5b8e6cf9691018eed3b49c363b7ed36af94fd8d0e1734198eb2d5d30 b0eb42ca922cce592fbfcc2b872ff94683aceacad20792c7749d13634498f34bc9322890ded6647b05ed049cabd059d7af34d43db6b6477cbc2933d56eb6c3c7 af399d32d282acb6184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8ca8e32446a12da7d50bd780059ff414f8 8f10d309634521e5107192c97b3918a9c76dbc50c48fbbe7d0fb8f8ac09713ec478a87bc5b8e6cf9691018eed3b49c363b7ed36af94fd8d0e1734198eb2d5d30 717cdf892ff6b6ff26c880f485e2ca3492ebc16da04e46be7de72266a8957c9762d766f77596a54bf588045849eceb90e6626fc5bfd508b1d776614f460f1ceb c6ada2f6665016dfac73e51ea6171029df13108db75bcac0ec8e4432708a2f10184dc1300cea2a1333803012812e35a27bbf3a0197757d1a10e6517c4d5c1c74 605b35877b85eee721377c54379bab5d239bdbe658d21d00044c5edbf77fecb6b03db27a4b23eea8387ddbd4b3ec85993c3ebf3aa31b5c39eb81723a9021625e 2ca24c18cb27721d153e73797dd8d866a0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c18663872d39f019dc350cbfaf73a0398017aa9b2faa6789e dff667fce1627b8f36b24b5db985d2d3ce28bcb138548355116fb2ef8f954fae37533a275f2c6d0eb5f1c17ee7956303f716375b8c71d2ca2a84cfa93f6086c1 00575617ddd170c91068d23fb1a14817be00a2a37fc213af7f6778186477bbeb7826d86a24e0c932558ae2e6b93c4040672f752658a09f218d5c737683766352 a147194f3a3bf6c0710f626c2faf14a6f716375b8c71d2ca7447dc705bd2b9a632f1f96ca76f178f24a8b58514063cc5773cfc1bd26698df56a4048f1e4ff032 f29d7d98ef0d8ffac4a17b59ca91381df45310c19b6b8ee57017057a427e6410b540685422c11ef9fceb72c6584bab533cf4807158e4909c9d6bedf9d0034ac8 605b35877b85eee721377c54379bab5dcd9f9b0fe66d8ad1b5b85bc0d31aaef583bc4964f97c0bfb1e00d217525559aedad4bb70f534f24c16944157eaac9744 a2faec34d68cdd2af13ee61e90b65ef18ce113ea01486d742446811279bcfdca7e4eff80f489c700d80f09fa99fcdc9f31ff87f86ef7d8025ac6c13a39cffff7 64a2af3d08b8c3fbe71f71e187584171b74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962dd61e0a440bad77e3138b871d3d163c946 273ef0efd9cac693c295486b1819e032f45310c19b6b8ee57017057a427e6410b540685422c11ef9f78e3835f7dcf08337b2d2e15ad7f2468671325e6f4b6b25 6422a9133f078ed399298f7cd44d061d706b807646b803717017057a427e6410b540685422c11ef93063c3bb852fe4d2fe14e8ed893f87905d43534984e52420 2579318862ec410f5268f2b9f86a0eca858728efae680901a23477990359ea58c64639ef522b82dbe7eefa795927f22cb124fbdd29716cfbacdab751cbf202c2 f29d7d98ef0d8ffab390595cafb1ab9635b229f6ed36cf79efe06c4f9b313c77dbc3554236bba2721c0530388a0d45f3f64c4168815a7f58b9ec58759fbaecf9 44e335dab141105980b07acdfe1a6318184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8c9d716709579b3adb ecc3810338d4a815ec85f36e56eb5e07f45310c19b6b8ee57017057a427e6410ce3e74f18b11c63edea2f49989a93410184dc1300cea2a136b276ab17ad27652 605b35877b85eee721377c54379bab5deb87848776396383b5b85bc0d31aaef5c78955b2f9a9a77ca7acfc5f2315b7c44c49b18e65b2012511d006434ff70a7c 2579318862ec410f5268f2b9f86a0eca858728efae6809018683b141dcb3272b7ae82484816be00fb5f1c17ee7956303f716375b8c71d2ca2a84cfa93f6086c1 605b35877b85eee721377c54379bab5dcc0121b5e20e20767e2db9a6f9c8f569a3453ba7982d296def7dd173ebafc8a5efe06c4f9b313c777a5f555c7f36bc06 55f7ebc1844b945cc9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1dfa360badf382ef60c1cb2f0da1ca881fcd6be7a2000af83 dff667fce1627b8f36b24b5db985d2d3ca919d09a48d33e1b19c9f724420bb21024a2e9187f5d113e73070a45f1d549ca0c7a89b875d76a7668ff86ff0a77892 273ef0efd9cac693699b83783a230135f45310c19b6b8ee57017057a427e6410b15a98c80c85bdd8834492d15d72f82c760b7acfc94bff32bd6e0240e530e0d3 00575617ddd170c977da2069621c0870be00a2a37fc213af7f6778186477bbeb9b7fc6a7cb92def0ea7d4f030068283373d9dc50e4e85c45abb485c8ac7a39ac 00575617ddd170c93a6d68c1db088061be00a2a37fc213af7f6778186477bbebe3abc915180b0fc75a90baf5cf07376f49bcb2e9b7241eb49d6bedf9d0034ac8 5dde899679de79ab1b335ff66691221544e30ee031766bfac90827f4e9cf024b821d3ad19a17fc5962d766f77596a54bf588045849eceb90e1051d295f61418a 317f1bcb1e5ac862ac73e51ea61710293497978ed7181356a099cec494ae8989f588045849eceb90e6626fc5bfd508b16334dff5a8e8736c4fe6e5c7e47db8f7 7b300a002f2d8ddd218ee09e41104590e28b1eaee7cc8472753c64a4a951701a9238c7ba345aa441c9f6c53b093b66727f70dd368fa5728963912ffecb55b6d8 b9ed3e04d2a793293fe9a17f99afa94395e943ccd8868a6ae93c8c7b51168b14478a87bc5b8e6cf9691018eed3b49c363b7ed36af94fd8d0e1734198eb2d5d30 f1b71296a16c9ee01b335ff66691221512ea7294e684b839f3c4e72344563a843b250a80e39602b5042f0c0c78bb0deb184dc1300cea2a136b276ab17ad27652 23ee73d6065f3641d811871cc3622e4a019b8717068e3d443f21a179b2be58baef1d7357d3c4e2f3644126c9831a96bdb74feb6ff8076c7955ab08ba49ed7650 2c7f46f84591bc12e2ad7048ed9193b1523b2604a68e8ef9fdf5f62657ccba9b2dc8ed9cc96ddaab24fdfd9bb2e10b07a0c7a89b875d76a7668ff86ff0a77892 857620ce20ef86cb26c880f485e2ca3415329f00962841785a4c41089daca73e787784bc593e995d23b782b3d6a37df1e7eefa795927f22c7d5ecccba7838ea4 8807bf206d8a4bf4da90698ba1ee0b1344e30ee031766bfa2eb33e7d0c66effdc4263047304fc101abbf8da1f96d2fb2492a61aa0d75bc53f41f2ac565d1fd58 d36d26370afc449b1fc67ec68dbc352ea826917222a64646f588045849eceb90e6626fc5bfd508b16334dff5a8e8736c568101f0eaa845cf8ea88232772e9185 f197831ab997cb511b335ff666912215962084b4cabaea50c0996ee0a6b29beec9f6c53b093b66727f70dd368fa57289ba6003231ac0493b0801900bb0d2ae74 71dbbe87e53e082f599bf13f0371d5b4fda72f5818c81bf49e91cddcc46315d65ed2fe27f6c34366691018eed3b49c363b7ed36af94fd8d0e1734198eb2d5d30 e8686e014b15db761b335ff6669122159c3be3c559456c162f7290d7f191b8ae23b782b3d6a37df1e7eefa795927f22cb124fbdd29716cfbacdab751cbf202c2 c858d814c56a2bcc769be4ce041f188824046311950bf77c4ba887e5e5417704abbf8da1f96d2fb2492a61aa0d75bc5381d5360d0e44f50c5d43534984e52420 48a94d11d238250f3e182210b1d9c2bc0dc94f7d1fc62090e213edf528fee6b2300b06d6b098e56a7a72378188149f25691018eed3b49c36df42c068afe98c8a 9e5134779ded2111f45310c19b6b8ee512d693d8957db81b478a87bc5b8e6cf9691018eed3b49c363b7ed36af94fd8d0b677be974a8015938337dc0ba5af8d26 e72ff3e7fc7190cdda90698ba1ee0b136ace929a007d96c44ba887e5e5417704abbf8da1f96d2fb2492a61aa0d75bc5363ed35b1266e36425d43534984e52420 f58ffbed3f217484706b807646b80371895d05bc59882af8f1b8d790cb2e41c9faca85d0862a74fbfc528ba36843793b0fa984f27f78bccf7d4d396707233756 4cf294edf7e0961f9b08e82f0908ea3a184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8c9d716709579b3adb 4a2e92973c32fd12551cc969959c56b127056d71145457d5fa52237fdde26b44691018eed3b49c363b7ed36af94fd8d0b677be974a8015938337dc0ba5af8d26 6f23563494b56938706b807646b8037132122f815f7bf45c8e927edd2d745704be7b72e16c425c0c78974fa8c5970bd3128fa59261fa1a65f44496155f03ed4f 2a76c18f665e8c270dbeca54fe4a6fa68c81757d6b17a69f9f7df7e1d853713719fc61b223c11fd91b03c3c8b1210eb1c9f6c53b093b6672f1b3224347ba154c 1fcbc249eb94715326c880f485e2ca340639c092da8a0ddddc87d8f5e8e39da462d766f77596a54bf588045849eceb90e6626fc5bfd508b1d776614f460f1ceb 52ba738fba12eb4a1b335ff6669122152ca8047c7957b30eae1e05fddac936fca0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c2a9ba28f5e45e265 f80a395284a571112fbfcc2b872ff94677ddc6f43cf11494749d13634498f34bc9322890ded6647b913601db0b53db113543ca07c959008c6f43b879c715b844 0db7e72d6e369fe1691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db1a4300bf221b913af248f4846b4e8d26c2c478990dc28ced 340902c1590d2246cbf62b4d3dcda7184aed8b565a5e13815c9e084edd7d2158f588045849eceb90e6626fc5bfd508b16334dff5a8e8736c4fe6e5c7e47db8f7 09a2b761cdd63986d58d21bd311ea6ba2716e67bb37c739248a22ba84875dab5e3e5946109ab96442be4d4793f1a270b2bdc2471723c531b74fb7cf2e7c9f235 32cd76a2a36328a99aa9a9248f306fbf65cef533b34422d3d4b905c33e8bae272576175eff3c1c5ab5f1c17ee7956303f716375b8c71d2ca2a84cfa93f6086c1 09a2b761cdd63986d58d21bd311ea6ba9f50c449b546348c48a22ba84875dab5e3e5946109ab9644d2f28a5c4bc363c766eaeb9fc4cc8ae125657ebd83de6526 14d9ecaf67b8c94ac3322ae60df680c2b6cb8b57da5c237d3a9cdabdca00b010bdc21b64c436efa17cb5783fbf51f543f588045849eceb90e1051d295f61418a 95216fad1e8e9329e73070a45f1d549ca0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c18663872d39f019dc350cbfaf73a0398017aa9b2faa6789e 09a2b761cdd63986d58d21bd311ea6ba0fa4ea595ab98ca05b6db4b5a524f0cfc24c449b5177ec438492e52ca9907137d45987aa526f7ebcaefc2cbd1904f036 8ae1ad83327b81dec5446a5920f1d318aa11a96fd77a05cab74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962ddf56ff53d81d427bd 21cb6a29d4b0b30d21ba0642d7d35b3451ffdabf74bf3f4cf588045849eceb90e6626fc5bfd508b16334dff5a8e8736c568101f0eaa845cf8ea88232772e9185 4cb05053dd12b0f521ba0642d7d35b340c9f3156902d2775f588045849eceb90e6626fc5bfd508b16334dff5a8e8736c568101f0eaa845cf8ea88232772e9185 09a2b761cdd639868eee1ee26f081f21957037c396f796b5025af90ddce02ede557891869bc2e855803fff23a4e2a281ce5ec34e6f8ad1ca20e65e1717a0b297 c35972971bda6cbfc2356fa0b0fe3ea9f716375b8c71d2ca7447dc705bd2b9a632f1f96ca76f178f24a8b58514063cc5773cfc1bd26698df56a4048f1e4ff032 09a2b761cdd639868eee1ee26f081f215fdb5cf0a0117bb6025af90ddce02ede557891869bc2e8553a1a9b7f4a1b1ea3ce5ec34e6f8ad1ca7f4fa8c50191d90c 021132bb3fd82585f588045849eceb90e6626fc5bfd508b16334dff5a8e8736c568101f0eaa845cf3900116365b28771ef6559fc277d4b8d420df9a063adc751 09a2b761cdd63986809e63d19e808c40706b807646b803719f37e7a110c0d30f8492e52ca9907137691018eed3b49c363b7ed36af94fd8d0e1734198eb2d5d30 05b5f1398a5d6f6906f29896cb00af16e3e5946109ab96448a6d0d3edb9c296d3b698759e0f6968715cde71e5a76569bc2356fa0b0fe3ea96004e157994bc9bf 09a2b761cdd6398671d94cdb4243f500706b807646b80371aa3deeb51b78df108ae1ad83327b81ded2bbaa26aad6c6147f96a94c9a957a0c5d43534984e52420 05b5f1398a5d6f6938e5202811de8b229aa9a9248f306fbfa019b886ca2946c45ec35ee69717b5a5974781ad152f7972184dc1300cea2a136b276ab17ad27652 5c2e262d493b312ff73e0c5051b95e15e503df2c2a48623568d4c1b330b1e1fa62d766f77596a54bf588045849eceb90e6626fc5bfd508b1d776614f460f1ceb b090b65fdd16a27f1b335ff66691221511253b9116fca4b5cc818c2e64e2441d3c991a04052eba44644126c9831a96bdb74feb6ff8076c7955ab08ba49ed7650 39b56735282d89731b335ff6669122156b74fd3a75af1db9b3eff0053075038b82b03c4529a3797d478a87bc5b8e6cf9691018eed3b49c36df42c068afe98c8a e513bba6d3228b87ac73e51ea6171029b9a376387dcea33ea1c0f782a9dccaf9c9f6c53b093b66727f70dd368fa57289ba6003231ac0493b0801900bb0d2ae74 b0fb847a3b385fda1b335ff66691221528bb17bf747c349a7bf91ca1a5006a10f588045849eceb90e6626fc5bfd508b16334dff5a8e8736c4fe6e5c7e47db8f7 a9174ed1bf108f9a0c5c216a3038c78c2ae141f64a46e45d8588cdf916f86d19e213edf528fee6b2300b06d6b098e56a3950d9f59cc9528fd38aff4e12555a5d 282e8027f6fd021a744533db3bdc064cd7dfcfdb598aef9d554e6be04a5ec8e754cc636c47659e96faca85d0862a74fb4674009031596e3afd5baaf91a42e7d3 ce28372646c1b72b8f8029c76dd5a72b644126c9831a96bdb74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962ddf56ff53d81d427bd 02673b7763e121d2184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8ca8e32446a12da7d50bd780059ff414f8 7c9acabd26c54e03f6a2b547dc976ba066c88eeb6c99df5da6f1ddb48cdca4178d1722fa3b58496691ecad6459b78f8ea076e3216a8b20ce62d766f77596a54b 7c9acabd26c54e03bf230db17611f82f66c88eeb6c99df5dc0db4b7a44834d678d1722fa3b584966c1119d53e95a4af64ebedf1affe729adabb485c8ac7a39ac 36beba41d0d291a4b1cc8ce9c0a7c4dbcd30ef1298e2828f2ca13e67bcc94ff2749d13634498f34b2228f4976daf1309c35972971bda6cbf82d021902886a9e0 7c9acabd26c54e03b585b96681e0ca9b66c88eeb6c99df5d836ccb36c8e634738d1722fa3b584966e5cfc863a8a501d624be77f172ebdc51bd6e0240e530e0d3 282e8027f6fd021a44f91394b9d9e846d7dfcfdb598aef9dd2820111558128219befd31f50da7206fe14e8ed893f8790c9f6c53b093b6672f1b3224347ba154c b895f158934e88384674009031596e3ae7b47cf3a9353d48d6c1365d95c11ec227a93decc2d57179c1fc488386db32b8e9fdfc8a753de111d38aff4e12555a5d 9479dc5c320af2ec1aed393b8b55339421a9aca16c78487ddfb89fd4996a844c8d1722fa3b584966d11416a3e67abd4b6d94ac99831e831f122d19e668be3062 547fa7df049edd5bd3ed529e2f03bd0da0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c18663872d39f019dc350cbfaf73a0398017aa9b2faa6789e 7c9acabd26c54e03dca29065f7b4a684eac8453836f1167d9fa4c4bc97a88581e2bb5bfeace0dc4a209a5091d0afa22fbc9ba1249b27d252bd6e0240e530e0d3 b4dba295799dbf1bb585b96681e0ca9b66c88eeb6c99df5ddfb89fd4996a844c9e4129bde4083afbf588045849eceb90e6626fc5bfd508b1d776614f460f1ceb 282e8027f6fd021a6263a80a123a82bfd7dfcfdb598aef9dd09f9d772f43ebef8492e52ca99071376cc173f11f5b8563f5ad3ad78240944d770dbf5b363fa50b 52d178a251a6b6d5a778ba06ffb6481ca0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c18663872d39f019dc350cbfaf73a0398017aa9b2faa6789e 66848ab3646ea9277df90e6847038987295d7e616dd35350af399d32d282acb6184dc1300cea2a1333803012812e35a27bbf3a0197757d1a10e6517c4d5c1c74 b4dba295799dbf1bcd9f9b0fe66d8ad166c88eeb6c99df5d74a45d3e091b7fad9dd87a2d3e5280a11de333fbd2e0f35df716375b8c71d2ca2a84cfa93f6086c1 9479dc5c320af2ec5c89cd247067d79021a9aca16c78487d112a23f56123a9e48d1722fa3b584966fc8cbd0336a453d86d94ac99831e831f122d19e668be3062 547fa7df049edd5b7c6a05e67fd634eea0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c18663872d39f019dc350cbfaf73a0398017aa9b2faa6789e da33f0d11a9f0f4ebf230db17611f82f66c88eeb6c99df5de7b47cf3a9353d4832a63025bcdcc99437b2d2e15ad7f246042f0c0c78bb0deb16944157eaac9744 36beba41d0d291a4df9ebaf9f2a35d54cd30ef1298e2828f7df90e6847038987e4cdac1c8a1d1b266e3f0899c50425cf107598ff023e5e6fe2ebc0dd60167d43 36258f891834800beb87848776396383ee894940744d7fd976fe71021a80bf2f2e23ba67bb505870b579c1d0cc3dc7d3644126c9831a96bde848d5f4c074f39d da33f0d11a9f0f4eeb8784877639638366c88eeb6c99df5d58ad1114986fcd033d34ea0a4263fbc88128d567d8fde99900d3e0b087c737445d43534984e52420 9479dc5c320af2eccfee2d3418fdb57721a9aca16c78487d7bdec82a4b7b53f08d1722fa3b584966e34cb4739f0740126d94ac99831e831f122d19e668be3062 547fa7df049edd5be96826b1b8137c4aa0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c18663872d39f019dc350cbfaf73a0398017aa9b2faa6789e 9479dc5c320af2ecdd40236d4888ed8d21a9aca16c78487dba5bfaa11384a59f8d1722fa3b58496619783d2f8036fcd56d94ac99831e831f122d19e668be3062 547fa7df049edd5bb41c954d84327076a0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c18663872d39f019dc350cbfaf73a0398017aa9b2faa6789e 282e8027f6fd021a05f06f9213ce83bad7dfcfdb598aef9d1257635b7fb4c541ce5ec34e6f8ad1cafb3114ec070b43c09abc853f63b3fb5a9aeb1dbca0cd0241 7bd9089c90910d476111a6a2967a6c58691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db1a4300bf221b913a1d65e1bf53966969 9479dc5c320af2ec34d8be222b1876f721a9aca16c78487d4f7687ea86dbe3318d1722fa3b584966e34cb4739f0740126d94ac99831e831f122d19e668be3062 547fa7df049edd5b27d9f7e5287cba2ca0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c18663872d39f019dc350cbfaf73a0398017aa9b2faa6789e da33f0d11a9f0f4ec12e63f53fc8b6c766c88eeb6c99df5d112a23f56123a9e48d1722fa3b584966a75b4546146326223c3f33a379f0af8a62d766f77596a54b 282e8027f6fd021af5687491f31f2924d7dfcfdb598aef9daea69d63dd36534320f664a3ff7b4a04faca85d0862a74fb4674009031596e3afd5baaf91a42e7d3 ce28372646c1b72b743bf58d1db148a3644126c9831a96bdb74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962ddf56ff53d81d427bd 02673b7763e121d2184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8ca8e32446a12da7d50bd780059ff414f8 45bb615a0113a2d76295f13f271e3dd4f45310c19b6b8ee5602264da8f44928d4c49b18e65b20125e7eefa795927f22cb124fbdd29716cfbacdab751cbf202c2 32cd76a2a36328a99889c62aee5fc834c6bc33b4ab296cf04d4c212f6c1abf84cf5d0219e0df7a9d7793c602b9feeb0dec7850cb5e2600ad9c7a4bc0de56f663 36258f891834800bcd9f9b0fe66d8ad1ee894940744d7fd976fe71021a80bf2f87ba5971c1666c6321a9aca16c78487d836ccb36c8e63473789bb4c149c0f7d2 36258f891834800b239bdbe658d21d0066c88eeb6c99df5d4f7687ea86dbe3318d1722fa3b58496619783d2f8036fcd59889c62aee5fc834ce6a500a0bc3e23b 400e963555b1a2d2dad4b7980b83d60ce7eefa795927f22cb124fbdd29716cfb2046728deb55b4a1950e8d6edabe13a34d2d6dc53bce5cb95aa5b7dadcd53e5b 53a47ce20eea766578777e4c883822d7496ee1101b7a39424ec484d93e85716ec50ef93b4e08741af588045849eceb90e6626fc5bfd508b1d776614f460f1ceb 282e8027f6fd021a95a9d5006d1ac9c1d7dfcfdb598aef9d83676253d12347c501de569537f728dffaca85d0862a74fbf42a59751c2d9c74c8871d0203ef020b 9c696fb13148990c8675a01b2db95be7c9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1dfa360badf382ef6a094882e5275efb6 da33f0d11a9f0f4ebc27f931268b406166c88eeb6c99df5d250025f01b12eac228962c68c37beadeed013b7ba2d18b82478a87bc5b8e6cf9d38aff4e12555a5d da33f0d11a9f0f4eb585b96681e0ca9b66c88eeb6c99df5d209a5091d0afa22fd267191e106d0b0d8387f45e647e26ceef1d7357d3c4e2f39d6bedf9d0034ac8 65f8ec3b931d45fecd9f9b0fe66d8ad166c88eeb6c99df5d836ccb36c8e634738d1722fa3b584966e5cfc863a8a501d66b895da7740b2625d38aff4e12555a5d da33f0d11a9f0f4ecc0121b5e20e207666c88eeb6c99df5d942409553266e8b316d68c73f74bc5565c8d68af7fe2e960609e19a3b1330370e89729e5d38ef58f 9479dc5c320af2ece68811ece2528fc321a9aca16c78487d8b3909b9b1ee98c48d1722fa3b584966fc8cbd0336a453d86d94ac99831e831f122d19e668be3062 547fa7df049edd5bd1e514cf9ee05ca5a0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c18663872d39f019dc350cbfaf73a0398017aa9b2faa6789e 81bc0cb7c12452441b335ff666912215062777163355bd154f60af2351f95502c051d21af37637adf716375b8c71d2ca7447dc705bd2b9a6b32ab536d12dcb53 abea470061b4cf4674c94f93c383e2578803136c44fdf03c12ea7294e684b8397b9253cdb3e17e06644126c9831a96bdb74feb6ff8076c7955ab08ba49ed7650 7aff1ed175018062cbf62b4d3dcda71850495b21047dc1007a2bb3bc46c04b4e478a87bc5b8e6cf9691018eed3b49c363b7ed36af94fd8d0e1734198eb2d5d30 a16523cb4c600880ac73e51ea6171029725174985eb3b1d34d745b560a9864aa2eab8f59404e32fbbfc3976bee98b06d691018eed3b49c36df42c068afe98c8a 900387b6be7bb99274c94f93c383e257d68ff0e069060e91ef1d7357d3c4e2f3644126c9831a96bdb74feb6ff8076c794d22c850cafe6d8869a81fde624533ad 32c994efcc2d922e0abfc569c2f155647ea6ad46ecf15209bca66beeb277b1607b9253cdb3e17e06644126c9831a96bdb74feb6ff8076c7955ab08ba49ed7650 d8f5a2ccd87b60eeac73e51ea6171029977c9ed6cdc69f7c55ee2ca7818ff4e6ffd414095be51912644126c9831a96bdb74feb6ff8076c7955ab08ba49ed7650 0abb8c42c110d7c574c94f93c383e257b06f7b2a5221d6a1cdc50eb41b28b6da1d28299200febf22f32a46da3bd46a365d87510856e45788d06855f06d6f53fd 75430035d97ed48aac73e51ea61710292f63ba7cec69a5ae92ebc16da04e46beffd414095be51912644126c9831a96bdb74feb6ff8076c7955ab08ba49ed7650 98b5f0d56fa74586769be4ce041f18881b695623e8d2ec72fc7f201294a05a1d28b5c8cbdfe3537fd7059c8c42854956483cf72d1898804474fb7cf2e7c9f235 f0141b5f35912e420abfc569c2f155647ea6ad46ecf15209cfcbccac057ce9367b9253cdb3e17e06644126c9831a96bdb74feb6ff8076c7955ab08ba49ed7650 0382627c5bd012d40abfc569c2f1556449ab06bccf3c5e3aa52c5d0900251b18f29bae4b68f7bfb2a10c11dc3b762f9f6a55ec42853e357f743ff23adc1a84eb 2a0dde369b0e03c9ac73e51ea6171029a294b4c9b4499e412f30647cd4a074f8cc0a4cfd13354a98646fb8d77d1a9bd0a0c7a89b875d76a7668ff86ff0a77892 b052355e65d40bda6072bbb927e75d221f5a36c0cfa2e93a622e6bb14f828842d5842d53d11b6659a54dd50435f134f9bfe7aa56cbb7750016944157eaac9744 8bf314ab8c0348996072bbb927e75d2233712e677bf821410e88ff585c7721b717db01c01a85b031d741aae16bf64f713db07fb45d793ed8809b758273603f84 afe317ae10e98155dffad4255220698bbbd6848a4bed6ce75cdcae49952477491bbe45b2adb70fc37a5aaa106641e9738c2b08ff5cc148ae11d006434ff70a7c a34eb0be5ea600af74c94f93c383e257d0e476fa0d4f54a90aa9758bb879ff7eee09f8451cbe1231710f626c2faf14a6f716375b8c71d2ca2a84cfa93f6086c1 e9dd452c4e6cfebeac73e51ea617102936c315db1f9d8b9bec8e4432708a2f10184dc1300cea2a1333803012812e35a27bbf3a0197757d1a10e6517c4d5c1c74 a3d26799f30d8e0d27881184d92232d68bb760bf7903e92ebb8309e553dbf02da9f8c600a5632a411d155fb90c9a9bd766eaeb9fc4cc8ae11a4ba722c03153cc 747e4f2a6405d9546d2aa86b77a26c95691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db1a4300bf221b913a1d65e1bf53966969 3e2f6d3b6fa1f79ec9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1dfa360badf382ef60c1cb2f0da1ca881fcd6be7a2000af83 dcfdab3db4e32d43ede29d0f5869fc33706b807646b803717f4022ad17ec791a661a51fa4c6b374154a3c6ec78dbb3aba9f8c600a5632a41dda7d25602215933 cc29c56aedd5408745b0476b0b2677a2450cb01944621787646fb8d77d1a9bd0a0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c2a9ba28f5e45e265 a3d26799f30d8e0d27881184d92232d6f5f9ed6312b8b794bb8309e553dbf02da9f8c600a5632a412ab53c80251d77034c49b18e65b2012511d006434ff70a7c 32cd76a2a36328a970c06ad4469b5f94cebdfdad9ec516f4887ff07020def09bc1fb5ea162ffd514e71f71e187584171b74feb6ff8076c7955ab08ba49ed7650 dcfdab3db4e32d433bf41dbcfedd1a73706b807646b803717f4022ad17ec791a962774806c3702bc70c06ad4469b5f94312fa97e331c1da84ae99547937d63c8 661a51fa4c6b3741de4c8491ec5adb9e644126c9831a96bdb74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962ddf56ff53d81d427bd a3d26799f30d8e0d27881184d92232d69555c9de400e3ff4bb8309e553dbf02d2552b09b2698b2f7faca85d0862a74fb691018eed3b49c36df42c068afe98c8a 5481192eeae2d9bcb37e8d7bc524479260738008e3ec23e9bd64c1cf62f7de1ee9cecb35b9656da53c43768853245e2f3c7d75eb5aa570c18f03faff22254705 6e8b426636593381d9cb531c84b2e78e691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db1a4300bf221b913a1d65e1bf53966969 94c296d774d16dc6029d261fdb11face706b807646b803717f4022ad17ec791a61c0f368e65895e727a7680140b18b02a9f8c600a5632a4124bb2947519915e1 6b895da7740b2625691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db1a4300bf221b913af248f4846b4e8d26c2c478990dc28ced a3d26799f30d8e0d27881184d92232d6f7a9cb3a3aa8fd3bbb8309e553dbf02da9f8c600a5632a41d43d8e2b52dc60dffaca85d0862a74fba0d09017c0a7e6e3 cbac94568cb7ea80af399d32d282acb6184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8c9d716709579b3adb dcfdab3db4e32d43a33cd2cacf2a506c706b807646b803717f4022ad17ec791aad422042d90c20ff70c06ad4469b5f94e3916bcf3d4f3b094ae99547937d63c8 661a51fa4c6b3741765675393dc7d125644126c9831a96bdb74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962ddf56ff53d81d427bd dcfdab3db4e32d43bba88ce0a19c8c96bb8309e553dbf02da9f8c600a5632a411b4f7fa9a4b8e3535071025688454c9ccbea7112d78cac1e41a05de3116e9b24 cfa43262ca04397ebba88ce0a19c8c96644126c9831a96bdb74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962ddf56ff53d81d427bd dcfdab3db4e32d43ede07d0c58d4f032706b807646b803717f4022ad17ec791abca82e895767d0d27f4022ad17ec791ac2725da9eb2b53c3ea4f4ffe9d39f1af a9f8c600a5632a4193ad7f2331f679c039859341766fc92cb74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962ddf56ff53d81d427bd e8ac5e09ea758be7a0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c18663872d39f019dc350cbfaf73a039872532af236d9d172b57b6cedb7a9d79e dcfdab3db4e32d43f260bf685f02b461706b807646b803717f4022ad17ec791a42584466a0744c915286be7e40403390726a141610f9030fcebceff5d226dc59 5ed2fe27f6c34366691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db1a4300bf221b913af248f4846b4e8d26c2c478990dc28ced a3d26799f30d8e0d27881184d92232d6718e8ffade3a3c48bb8309e553dbf02da9f8c600a5632a41a2551ee6b7ec08c82bdc2471723c531b74fb7cf2e7c9f235 32cd76a2a36328a970c06ad4469b5f94b06ce489a5ca8bc762c70e641415368ae382e6191d1e3e368490b79e7682309954c51e02474204001668843a96fba0b1 70c06ad4469b5f94563cdd7e1d34ebd6233b9393f3163918e7eefa795927f22cb124fbdd29716cfb2046728deb55b4a1950e8d6edabe13a3323cc4f3a5d7e023 aa3996e99201019ac9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1dfa360badf382ef60c1cb2f0da1ca881fcd6be7a2000af83 8b85e4e539255337f588045849eceb90e6626fc5bfd508b16334dff5a8e8736c568101f0eaa845cf3900116365b28771ef6559fc277d4b8d420df9a063adc751 73f5336ad93df892b5f1c17ee7956303f716375b8c71d2ca7447dc705bd2b9a632f1f96ca76f178f24a8b58514063cc5773cfc1bd26698df56a4048f1e4ff032 a13c3ebdebf2dda89f946f657c75313a706b807646b80371f883903d081a702445b0476b0b2677a2835e233e602f4a1ea95eab34c46af31de89729e5d38ef58f 1c21120900cc4a8e36396189a293dfcd706b807646b803717f4022ad17ec791a42584466a0744c91e12e7b2be99df4b145b0476b0b2677a2858904c65dd9fcbe ce133616d118868f7b4ac1d86b005a10184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8c9d716709579b3adb 0418cc75e3d7cf68710f626c2faf14a6f716375b8c71d2ca7447dc705bd2b9a632f1f96ca76f178f24a8b58514063cc5773cfc1bd26698df56a4048f1e4ff032 a3d26799f30d8e0d27881184d92232d6528864a47f84deb1bb8309e553dbf02da9f8c600a5632a415f733ff96338b1f2dad4bb70f534f24c16944157eaac9744 32cd76a2a36328a970c06ad4469b5f942787d48592327eee7e9f11aea7261d3fc1fb5ea162ffd514e71f71e187584171b74feb6ff8076c7955ab08ba49ed7650 94c296d774d16dc61a3f0583e1a3bd76706b807646b803717f4022ad17ec791a61c0f368e65895e764c58fec2fc42cd7a9f8c600a5632a41c4ca8063797fb61b 6b895da7740b2625691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db1a4300bf221b913af248f4846b4e8d26c2c478990dc28ced a3d26799f30d8e0d27881184d92232d674efa137fe2e0c89bb8309e553dbf02da9f8c600a5632a413741f88c4d16baa8ce5ec34e6f8ad1ca1cc1a996f7fda727 3855efdebcb13ff95d7d82e5a16ed00f644126c9831a96bdb74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962ddf56ff53d81d427bd be933631531f9659e7eefa795927f22cb124fbdd29716cfb2046728deb55b4a1950e8d6edabe13a34d2d6dc53bce5cb937b7b413a3c0865e2daf092be8c923c4 1c21120900cc4a8e19f3f50aa9dc900f706b807646b803717f4022ad17ec791a42584466a0744c915286be7e4040339045b0476b0b2677a2f7ba82e1f913d254 ce133616d118868f7b4ac1d86b005a10184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8c9d716709579b3adb 0418cc75e3d7cf68710f626c2faf14a6f716375b8c71d2ca7447dc705bd2b9a632f1f96ca76f178f24a8b58514063cc5773cfc1bd26698df56a4048f1e4ff032 dcfdab3db4e32d43d10aca187e10ee8f706b807646b803717f4022ad17ec791a7fc190a94cff1584c4fe171c4aa376b5a9f8c600a5632a41d45c707ab17d8b3b 2994a828cfcb8a945699c5db1d4fd476e847dda77d5f9443b74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962ddf56ff53d81d427bd d49c10eabba409d0691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db1a4300bf221b913af248f4846b4e8d26c2c478990dc28ced a13c3ebdebf2dda881d04920058e3784706b807646b80371f883903d081a702445b0476b0b2677a2367114db4850319ea95eab34c46af31de89729e5d38ef58f a3d26799f30d8e0d27881184d92232d60fa4ea595ab98ca0deaba362d68b5afa8490b79e76823099b616acb3afc2463ed3b99b01fef3c64478e91940a8e16688 7793f45490075ab3184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8ca8e32446a12da7d50bd780059ff414f8 2a6720d0591cca0540f05819e599c2c0f44496155f03ed4ff588045849eceb90e6626fc5bfd508b16334dff5a8e8736c568101f0eaa845cf8ea88232772e9185 a3d26799f30d8e0d27881184d92232d6b5c9d0c1558cfdd3bb8309e553dbf02da9f8c600a5632a41737375a8f10d4240faca85d0862a74fb1e10c57f3fa5c4ab c8fe38984326176d6d35d8485846d699e7eefa795927f22cb124fbdd29716cfb2046728deb55b4a1950e8d6edabe13a34d2d6dc53bce5cb95aa5b7dadcd53e5b a13c3ebdebf2dda8dab4c24b55761cda706b807646b80371f883903d081a70248490b79e7682309988d781a019b79b2cf357d2495314aea2abb485c8ac7a39ac 1c21120900cc4a8eb4ce929101f95640a665d0fac02ce03ed9e82c4170fcde6c7c9c7b2e8cc681a533f224eaf10e8b80b37e8d7bc52447928c38e2b886ad00f4 2c671ee0eeadba6424fdfd9bb2e10b07a0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c18663872d39f019dc350cbfaf73a0398017aa9b2faa6789e 099a86bb88e9bfe31aabf11df8bc7d16d80baa145e5a06b5b0daf6fdf32567c9447da73140e1fc0c72d03a382a5bfff6644126c9831a96bde848d5f4c074f39d 81a9746d786d11d6818d73f79dee5cb4f418b0d160a3681f3dd6b421a8a3725817181a2338ab2aebfaea4b98a48f84e01933952b4dcad44ce0c8f92b9e893480 0805c9bc4a8c6e821b335ff666912215dfcb0cac625c1873016f27e7fe377c06dce40a334853b6026620d3f6c560089e644126c9831a96bde848d5f4c074f39d 224fe9df4b4ef4f274c94f93c383e25734ea5a4105092647687fb7a3cd2ce4a4c841ee37f63fbd9f789bb4c149c0f7d2f588045849eceb90e1051d295f61418a a1642ab168aedbca706b807646b80371cff3aa4dfc172ba9fe8065cdb5f5f8ce9d8a6e2e9f780fbd77f292f81f948d5c30c576d2a5a01b7b87e4581c8c748cc7 17cb17e37c3b5d6d55136b92d0559ec4e71f71e187584171b74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962ddf56ff53d81d427bd 2dbdd1f19d21f2c6f45310c19b6b8ee5cdbea1dc33dbc9f7478a87bc5b8e6cf9691018eed3b49c363b7ed36af94fd8d0b677be974a8015938337dc0ba5af8d26 e32412d8e97ecf0cf45310c19b6b8ee59a410bc651fe35dc62d766f77596a54bf588045849eceb90e6626fc5bfd508b16334dff5a8e8736c4fe6e5c7e47db8f7 dbf12f0360092c452fbfcc2b872ff946ed93a0256a6d844d749d13634498f34bc9322890ded6647b3e79fe16148a605c0bf1a37a93ab80b462b84e5bac7fe806 012c1a3f018cd4280f4d3610e546ee8e184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8c9d716709579b3adb cc1384a8203fb2628cf29811b0e6da3536fb420f5a067a1ef588045849eceb90e6626fc5bfd508b16334dff5a8e8736c568101f0eaa845cf8ea88232772e9185 846dad09021724e51b335ff66691221555e91b4e96b9929fcffa2bb36a30977a184dc1300cea2a1333803012812e35a27bbf3a0197757d1a10e6517c4d5c1c74 240cf6a83072ff1a38a199ba1268a68172d2a53fbeaf00843cafa1326cfe18744842ef87c436514df49fb174d085ee41608e5066341ff6bd6004e157994bc9bf c1dd9c389b868458e0c9cc74d563e9795556ffb9d7663e42817afbf1a1467aacfeff6bfa8393f3f8f8c60dfea3fcb448617d098114966bf404fdd277fd95ba23 2b1f6b713203d99458b58148317651d2f716375b8c71d2ca7447dc705bd2b9a632f1f96ca76f178f24a8b58514063cc5773cfc1bd26698df56a4048f1e4ff032 42cad0d02e943b3cf45310c19b6b8ee547f0b089656f266e62d766f77596a54bf588045849eceb90e6626fc5bfd508b16334dff5a8e8736c4fe6e5c7e47db8f7 0d5aef5328a6b0bcac73e51ea6171029067f4902092fb36aa1b7be63766c6afbca844e5556e86be4a0c7a89b875d76a7b0718e2bf61f10a79c4d3d62406ead54 2a3fd364408caf246f52d5ca6e23dacfc8fb14f6ca5b8e2bd388e23ae3aabe19e7eefa795927f22cb124fbdd29716cfb2046728deb55b4a198671645a8a8b509 $CDNENCFINISH .ENDS ZXLD1371_PSPICE *$ .subckt ZXLD1371_FOR_HIERARCHY_S7 1 2 3 4 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf ca116cfd9f503f5a31820e631d1d1d74bc43870b2068c893691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db99279120ce8e2a4f 22fa704315324fee6f31076d2b37e96baa35006d782c6ce9c9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1683daeb2b137fd4d 1e7e75f62a07f7b1bbcb463bf6330e44b8257e7c370c44b80ffb76e2ddf4497b2661590815226ffb5d0d2970852fcd9175a72dcf08b05ada72e8a5ba6eb8ba83 $CDNENCFINISH .ends ZXLD1371_FOR_HIERARCHY_S7 *$ .subckt ZXLD1371_FOR_HIERARCHY_S4 1 2 3 4 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf cca5ca7cd3bb954631820e631d1d1d743397604f987b60be691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db99279120ce8e2a4f c89815736fd06a736f31076d2b37e96baa35006d782c6ce9c9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1683daeb2b137fd4d 1e7e75f62a07f7b1bbcb463bf6330e44d3c3547c91af769e0ffb76e2ddf4497b658b10ab5642c9074b56e07cb2a0a4fbe2da13bf6ad1ec6e8a8fe36961566219 $CDNENCFINISH .ends ZXLD1371_FOR_HIERARCHY_S4 *$ .subckt ZXLD1371_FOR_HIERARCHY_S1 1 2 3 4 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 44f117741689d59131820e631d1d1d749e35700c7913e939691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db99279120ce8e2a4f 3c76beba9b808c126f31076d2b37e96baa35006d782c6ce9c9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1683daeb2b137fd4d 1e7e75f62a07f7b1bbcb463bf6330e447b3ba2fd65dbf9050ffb76e2ddf4497b2661590815226ffb5b32e22ee2762aa4de796a07e247501c3e91162e7d1bf20b $CDNENCFINISH .ends ZXLD1371_FOR_HIERARCHY_S1 *$ .subckt ZXLD1371_FOR_HIERARCHY_S5 1 2 3 4 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf a41eff5afcadbe0431820e631d1d1d74cce714c3daebb9ef691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db99279120ce8e2a4f 0d00147a4ec8159a6f31076d2b37e96baa35006d782c6ce9c9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1683daeb2b137fd4d 1e7e75f62a07f7b1bbcb463bf6330e444ffca53f33c7306d0ffb76e2ddf4497b2661590815226ffb5b32e22ee2762aa4de796a07e247501c3e91162e7d1bf20b $CDNENCFINISH .ends ZXLD1371_FOR_HIERARCHY_S5 *$ .subckt ZXLD1371_FOR_HIERARCHY_S9 1 2 3 4 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 0d4fba81348870d631820e631d1d1d74525a947d4222b598691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db99279120ce8e2a4f 7e9baaa9719bd1f96f31076d2b37e96baa35006d782c6ce9c9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1683daeb2b137fd4d 1e7e75f62a07f7b1bbcb463bf6330e44ccbbb1088960694e0ffb76e2ddf4497b56602f79b0c467cddacf708331606702dd351453c45c7fd75065ec6d2c8c5479 dc224b6b76a2bc94c9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1dfa360badf382ef60c1cb2f0da1ca881fcd6be7a2000af83 $CDNENCFINISH .ends ZXLD1371_FOR_HIERARCHY_S9 *$ .subckt FREQ_HYS_CONTROL_freq_S5 1 2 3 4 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 725de3fcbb693074bc27f931268b4061ffb40d9244a39c7b6a68ac505a5ecff2c88548d8e960e4b4f716375b8c71d2ca7447dc705bd2b9a6b32ab536d12dcb53 2b807af9ad33acd227765b42d27caeee0fc456520f02d491ed53b4ce5c20ee27b74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b673939e13ac51b349 1e7e75f62a07f7b1bbcb463bf6330e449700bce0c7d12200b469a8d685c038374bf43f00b3546d6cc905474b9732df37ff411e42e94343f8a5ee8a3eda0c234c 768e04b30687cfb2f588045849eceb90e6626fc5bfd508b16334dff5a8e8736c568101f0eaa845cf3900116365b28771ef6559fc277d4b8d420df9a063adc751 $CDNENCFINISH .ends FREQ_HYS_CONTROL_freq_S5 *$ .subckt FREQ_HYS_CONTROL_freq_S4 1 2 3 4 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 725de3fcbb693074cc0121b5e20e2076ffb40d9244a39c7b6a68ac505a5ecff253d628d3aa8f23f0f716375b8c71d2ca7447dc705bd2b9a6b32ab536d12dcb53 2b807af9ad33acd20eac5929827abc620fc456520f02d491ed53b4ce5c20ee27b74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b673939e13ac51b349 1e7e75f62a07f7b1bbcb463bf6330e444bc03f093be0dc18b469a8d685c0383732325ad26af3c92db16935f5527df49e8f182a59499ce6406c15b30d8f543ada 816422455737d21b184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8ca8e32446a12da7d50bd780059ff414f8 $CDNENCFINISH .ends FREQ_HYS_CONTROL_freq_S4 *$ .subckt FREQ_HYS_CONTROL_freq_S2 1 2 3 4 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 725de3fcbb693074239bdbe658d21d00ffb40d9244a39c7b6a68ac505a5ecff2490cb4e483ee24adf716375b8c71d2ca7447dc705bd2b9a6b32ab536d12dcb53 2b807af9ad33acd23a40f0eb405719560fc456520f02d491ed53b4ce5c20ee27b74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b673939e13ac51b349 1e7e75f62a07f7b1bbcb463bf6330e440322e8d4ef436925b469a8d685c038370cf9f34ef7439c7d45316724feefc5c28f182a59499ce6406c15b30d8f543ada 816422455737d21b184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8ca8e32446a12da7d50bd780059ff414f8 $CDNENCFINISH .ends FREQ_HYS_CONTROL_freq_S2 *$ .subckt FREQ_HYS_CONTROL_freq_S7 1 2 3 4 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 725de3fcbb693074bf230db17611f82fffb40d9244a39c7b6a68ac505a5ecff233cad0128b74623ff716375b8c71d2ca7447dc705bd2b9a6b32ab536d12dcb53 2b807af9ad33acd2fae8f259c6c39e8a0fc456520f02d491ed53b4ce5c20ee27b74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b673939e13ac51b349 1e7e75f62a07f7b1bbcb463bf6330e44f29f1bd798b90240b469a8d685c038374bf43f00b3546d6cecd4cdb03700be1f0fce1330368f375ef1481883b3c827f1 5fe9ab614b8532c6691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db1a4300bf221b913af248f4846b4e8d26c2c478990dc28ced $CDNENCFINISH .ends FREQ_HYS_CONTROL_freq_S7 *$ .subckt FREQ_HYS_CONTROL_freq_S6 1 2 3 4 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 725de3fcbb693074c12e63f53fc8b6c7ffb40d9244a39c7b6a68ac505a5ecff27ac7164c6d09e590f716375b8c71d2ca7447dc705bd2b9a6b32ab536d12dcb53 2b807af9ad33acd23284dbb5b24063b50fc456520f02d491ed53b4ce5c20ee27b74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b673939e13ac51b349 1e7e75f62a07f7b1bbcb463bf6330e4451f6f2e2c182f951b469a8d685c0383732325ad26af3c92db16935f5527df49e8f182a59499ce6406c15b30d8f543ada 816422455737d21b184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8ca8e32446a12da7d50bd780059ff414f8 $CDNENCFINISH .ends FREQ_HYS_CONTROL_freq_S6 *$ .subckt FREQ_HYS_CONTROL_freq_S3 1 2 3 4 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 725de3fcbb693074eb87848776396383ffb40d9244a39c7b6a68ac505a5ecff223ed7a9eec21b7f2f716375b8c71d2ca7447dc705bd2b9a6b32ab536d12dcb53 2b807af9ad33acd211ae75f02889d2920fc456520f02d491ed53b4ce5c20ee27b74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b673939e13ac51b349 1e7e75f62a07f7b1bbcb463bf6330e443f4a0cd3d8ecd961b469a8d685c038370cf9f34ef7439c7d45316724feefc5c28f182a59499ce6406c15b30d8f543ada 816422455737d21b184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8ca8e32446a12da7d50bd780059ff414f8 $CDNENCFINISH .ends FREQ_HYS_CONTROL_freq_S3 *$ .subckt ZXLD1371_FOR_HIERARCHY_S3 1 2 3 4 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 49437a5c2c000e5531820e631d1d1d7451c16968e1146dc5691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db99279120ce8e2a4f 196545b3a77859896f31076d2b37e96baa35006d782c6ce9c9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1683daeb2b137fd4d 1e7e75f62a07f7b1bbcb463bf6330e449fca2d09a1602b870ffb76e2ddf4497b2661590815226ffb5d0d2970852fcd91e7e145aac8e3e7699d637f5014d15567 $CDNENCFINISH .ends ZXLD1371_FOR_HIERARCHY_S3 *$ .subckt ZXLD1371_FOR_HIERARCHY_S2 1 2 3 4 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf c21144fd15b2c61331820e631d1d1d7423f284e2e346bfb8691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db99279120ce8e2a4f e07b7a6acd4bf43c6f31076d2b37e96baa35006d782c6ce9c9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1683daeb2b137fd4d 1e7e75f62a07f7b1bbcb463bf6330e44eff574bcdcb677aa0ffb76e2ddf4497b2661590815226ffb954d83117570d624bedd4f0e0429e49f7c4bbf5b95fbb5a2 $CDNENCFINISH .ends ZXLD1371_FOR_HIERARCHY_S2 *$ .subckt ZXLD1371_FOR_HIERARCHY_S8 1 2 3 4 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 48cad54cbc66f42d31820e631d1d1d740e2409c315f54dec691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db99279120ce8e2a4f e65d04c3f5d7c4236f31076d2b37e96baa35006d782c6ce9c9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1683daeb2b137fd4d 1e7e75f62a07f7b1bbcb463bf6330e44a0cccacb04419cb30ffb76e2ddf4497bde068206158253e41090d0879c58eb702947f67be37eddb2d38aff4e12555a5d $CDNENCFINISH .ends ZXLD1371_FOR_HIERARCHY_S8 *$ .subckt FLAG_AND_STATUS_STATUS_FLAG_S1 1 2 3 4 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf cfa43262ca04397ebba88ce0a19c8c96706b807646b80371180f9852cfb962b0a383dc18dcb615b7bba88ce0a19c8c96691018eed3b49c36df42c068afe98c8a 2075146148d4b5070b96a7f211b663c6cd9f9b0fe66d8ad19fdd4d3bdfe20cf0691018eed3b49c363b7ed36af94fd8d0b677be974a8015938337dc0ba5af8d26 1e7e75f62a07f7b1bbcb463bf6330e4470c06ad4469b5f947053772909f75e89fb3b1a8334015d62d1c429fd2f3b2883fd2de4c0061ef81a9adc56f03a8d243c 56d61c3bc288fdfab3ae07e46b54f215a0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c18663872d39f019dc350cbfaf73a0398017aa9b2faa6789e $CDNENCFINISH .ends FLAG_AND_STATUS_STATUS_FLAG_S1 *$ .SUBCKT COMPARATOR IN+ IN- OUT PARAMS: DELAY=10n $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 66905336f9365357c6cd6456b373c3f13695a267d63dfaeb5708e23ac33f007982c30b6978092afa172cac7b9698ef38691018eed3b49c36df42c068afe98c8a 16288721619f9c8b73e70156d3cd9e32ba7f00f779fc266112e28b77a3176d96f3acf00b7a00a5d9a0c7a89b875d76a7b0718e2bf61f10a79c4d3d62406ead54 6a7043c1c76bf8115801d29f353ff668c9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1dfa360badf382ef6a094882e5275efb6 $CDNENCFINISH .ENDS COMPARATOR *$ .SUBCKT AND_2 A B Y $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 10efb0b13c2f06ffcd275293805a1df167b1d69fd012a0368265dc80b7e0d46e0117c329126d1ef51031098785dc58b6c2356fa0b0fe3ea96004e157994bc9bf 17e4597d7405ff3c2f248600004a4f45184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8c9d716709579b3adb fd08d4c148850df0085e1afd0064919bf716375b8c71d2ca7447dc705bd2b9a632f1f96ca76f178f24a8b58514063cc5773cfc1bd26698df56a4048f1e4ff032 $CDNENCFINISH .ENDS AND_2 *$ .SUBCKT AND_3 A B C Y $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 10efb0b13c2f06ffcd275293805a1df15414ce0c3c28bd7f5b09636c3bdb66729bb98c81884b404e9ab688292ff1c0c1ccd6f3cde728099eb71d6b06b8085e19 17e4597d7405ff3c2f248600004a4f45184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8c9d716709579b3adb fd08d4c148850df0085e1afd0064919bf716375b8c71d2ca7447dc705bd2b9a632f1f96ca76f178f24a8b58514063cc5773cfc1bd26698df56a4048f1e4ff032 $CDNENCFINISH .ENDS AND_3 *$ .SUBCKT OR_2 A B Y $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 10efb0b13c2f06ffcd275293805a1df15414ce0c3c28bd7fe0ca60defdf7d1449bb98c81884b404e3e10a24a415fea9ce71f71e187584171e848d5f4c074f39d 17e4597d7405ff3c2f248600004a4f45184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8c9d716709579b3adb fd08d4c148850df0085e1afd0064919bf716375b8c71d2ca7447dc705bd2b9a632f1f96ca76f178f24a8b58514063cc5773cfc1bd26698df56a4048f1e4ff032 $CDNENCFINISH .ENDS OR_2 *$ .SUBCKT OR_3 A B C Y $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 10efb0b13c2f06ffcd275293805a1df15414ce0c3c28bd7fe0ca60defdf7d1449bb98c81884b404e540b35c06706fc31ccd6f3cde728099eb71d6b06b8085e19 17e4597d7405ff3c2f248600004a4f45184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8c9d716709579b3adb fd08d4c148850df0085e1afd0064919bf716375b8c71d2ca7447dc705bd2b9a632f1f96ca76f178f24a8b58514063cc5773cfc1bd26698df56a4048f1e4ff032 $CDNENCFINISH .ENDS OR_3 *$ .SUBCKT BUFFER IN OUT $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 66905336f9365357c6cd6456b373c3f1dbf0264b29e4cbf244656e81b84a3fc43e10a24a415fea9ce71f71e187584171b74feb6ff8076c7955ab08ba49ed7650 16288721619f9c8b73e70156d3cd9e3236806a8e381bf9a0b74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962ddf56ff53d81d427bd 6a7043c1c76bf811fa1447639072c48ac9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1dfa360badf382ef6a094882e5275efb6 $CDNENCFINISH .ENDS BUFFER *$ .SUBCKT BUFFER_DELAY IN OUT PARAMS: DELAY=10n $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf f8547e868ffe926371707ca6c7cdc2c0db8456fb9fc0e60ca344273ac7c053539894c1140acaefeda0c7a89b875d76a7b0718e2bf61f10a79c4d3d62406ead54 6a3db1adc01f2d0736806a8e381bf9a0b74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962dd61e0a440bad77e3138b871d3d163c946 d60bc892fb1b4da34d01e0f129090a713dfc58e2232c84d7e7eefa795927f22cb124fbdd29716cfb2046728deb55b4a1950e8d6edabe13a3323cc4f3a5d7e023 f11d6a2c6927773428f84a1a2d7ca9633291f8ae48f5b6faccd6f3cde728099e8ee54616d1c590f4c9f6c53b093b66727f70dd368fa5728963912ffecb55b6d8 $CDNENCFINISH .ENDS BUFFER_DELAY *$ .SUBCKT INVERTER IN OUT $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 66905336f9365357c6cd6456b373c3f1dbf0264b29e4cbf244656e81b84a3fc40cf393e03c403d23e71f71e187584171b74feb6ff8076c7955ab08ba49ed7650 16288721619f9c8b73e70156d3cd9e3236806a8e381bf9a0b74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962ddf56ff53d81d427bd 6a7043c1c76bf811fa1447639072c48ac9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1dfa360badf382ef6a094882e5275efb6 $CDNENCFINISH .ENDS INVERTER *$ .MODEL D_IDEAL D $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 75eac7fe7be88fbd8f93d26d6d7158edf588045849eceb90e6626fc5bfd508b16334dff5a8e8736c568101f0eaa845cf3900116365b287716165f3a5d711faa4 $CDNENCFINISH *$ .MODEL D_LED D $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 05b7e48834d14dc5a0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c18663872d39f019dc350cbfaf73a039872532af236d9d172b57b6cedb7a9d79e $CDNENCFINISH *$ .SUBCKT COMP_HYS IN+ IN- OUT PARAMS: HYS=100m $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 66905336f9365357c6cd6456b373c3f1dbf0264b29e4cbf2ab2e0bc08da7b2652a0d293edc0e45fbf454f969ffd39687bf450df4c4e9e23df8d564b4b43d4a8b 16288721619f9c8b73e70156d3cd9e3236806a8e381bf9a0b74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962ddf56ff53d81d427bd 6a7043c1c76bf811ac64abca1fecc7e1e847dda77d5f9443b74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962ddf56ff53d81d427bd $CDNENCFINISH .ENDS COMP_HYS *$ .MODEL symbol_name_d d $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf b6947b007d81578c2dfb58a8d563abc3f588045849eceb90e6626fc5bfd508b16334dff5a8e8736c568101f0eaa845cf3900116365b287716165f3a5d711faa4 $CDNENCFINISH *$ .model symbol_name_nmos nmos *$ .model symbol_name_bjt npn *$ .SUBCKT OPAMP IN+ IN- OUT PARAMS: POLE=100k VMAX=5 VMIN=0 GAIN=10000 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 3c22fc7bf920393e42980fba0f39412f3693428137f342bac9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1683daeb2b137fd4d d1d3a87084f277dc2fe9793711afa1c8e7eefa795927f22cb124fbdd29716cfb2046728deb55b4a1950e8d6edabe13a34d2d6dc53bce5cb95aa5b7dadcd53e5b 79f33636374221840efca1f16b0b0c4c3693428137f342bac9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1683daeb2b137fd4d 4c899a551cd7061512a1677418d3eea3e7eefa795927f22cb124fbdd29716cfb2046728deb55b4a1950e8d6edabe13a34d2d6dc53bce5cb95aa5b7dadcd53e5b d7072740a938f0e72752c8207c4277f84f9b01dedaec6f67c4b176bd7b03555bc9f6c53b093b66727f70dd368fa57289ba6003231ac0493b0801900bb0d2ae74 425c9b52d84437faed112ed3066b88085a8d2d705d2688894223460450a363bd9d521bfb0940593fa0c7a89b875d76a7b0718e2bf61f10a79c4d3d62406ead54 1faea247e1a8c1555afff61ed7f1575cc9ea4b833c89b58ac9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1683daeb2b137fd4d b211161c561aa8ac73e70156d3cd9e3236806a8e381bf9a0b74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962ddf56ff53d81d427bd ff2f30a0f5680561a8b2bab6b462538002e6d7b91a055bf47df3b84ad0c4ee9bc9f6c53b093b66727f70dd368fa57289ba6003231ac0493b0801900bb0d2ae74 $CDNENCFINISH .ENDS OPAMP *$ .SUBCKT SR_LATCH S R Q Qb $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 3ff62270067d0a2acd275293805a1df15414ce0c3c28bd7fe83384dc37890adeef1c3670504e0551f3c5bb9f3f22721496d6f86ec564aabc82d021902886a9e0 a7cbdf8ef8369f02abcd5bc418da0bde184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8c9d716709579b3adb b521439d911db4ae985fd30f1da54348f716375b8c71d2ca7447dc705bd2b9a632f1f96ca76f178f24a8b58514063cc5773cfc1bd26698df56a4048f1e4ff032 b9714e9f0185ebe0c3fa3d1e401a4503979added4bba322bd4f2da227571b4d2d5df8edfc52ef08bf588045849eceb90e6626fc5bfd508b1d776614f460f1ceb ff7b9cdb444d3489f5af95f73630db59f588045849eceb90e6626fc5bfd508b16334dff5a8e8736c568101f0eaa845cf3900116365b287716165f3a5d711faa4 1054010ec6d491bee18a20b319ef4d27a0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c18663872d39f019dc350cbfaf73a0398017aa9b2faa6789e $CDNENCFINISH .ENDS SR_LATCH *$ *TITLE=AL8805 MACROMODEL *ORIGIN=DZSL_AG_GS *SIMULATOR=DIODES, SIMETRIX and PSPICE *DATE=1st Feb 2013 *VERSION=2 *PIN_ORDER 1:SW, 2:GND, 3:CTRL, 4:SET, 5:VIN * * This model is intended for feasibility study of application * design. It is expected that it will not accurately represent * the device real performance. However some important features * of the device are modelled approximately. * The model does not include effects of temperature or self-heating. * Testing of prototype hardware and optimisation on the bench * is always required before production build. * * NOTE: set RELTOL=1E-5 for clean switching waveform * .subckt AL8805 1 2 3 4 5 * Connections SW GND CTRL SET VIN * pins SOT23 1 2 3 4 5 * * Block 1: Vref Generator * input nodes 5 and 2, outputs 11 and 2 .param VIL1=0.8 VOL1=0 VIH1=3.45 VOH1=2.5 ;high and low limits of input and output .param MUH1=0.05 MUL1=0.1 ; high and low curve error .param SL1={(VOH1-VOL1)/(VIH1-VIL1)} ; gain slope E11 11 2 value={min(max(VOL1+SL1*(V(5)-V(2)-VIL1+MUL1*(1-tanh((V(5)-V(2)-VIL1+MUL1)/MUL1)) + -MUH1*(1+tanh((V(5)-V(2)-VIH1-MUH1)/MUH1))) ,VOL1),VOH1)} R11 11 3 50k * Block 2: CTRL limiter * input nodes 3 and 2, outputs 21 and 2 .param VIL2=0 VOL2=0 VIH2=2.5 VOH2=2.5 ;high and low limits of input and output .param MUH2=0.001 MUL2=0.2 ; high and low curve error .param SL2={(VOH2-VOL2)/(VIH2-VIL2)} ; gain slope E21 21 2 value={min(max(VOL2+SL2*(V(3)-V(2)-VIL2+MUL2*(1-tanh((V(3)-V(2)-VIL2+MUL2)/MUL2)) + -MUH2*(1+tanh((V(3)-V(2)-VIH2-MUH2)/MUH2))) ,VOL2),VOH2)} * Block 3: CTRL lockout with hysteresis * R32 21 31 1000 I31 21 31 100uA R31 31 32 1k C31 32 2 10p S31 31 21 32 2 S_31 .model S_31 VSWITCH Roff=10e6 Ron=1 Voff=505mV Von=495mV S32 53 2 32 2 S_32 .MODEL S_32 VSWITCH Roff=10e6 Ron=100 Voff=501mV Von=499mV * Block 4: UVLO with hysteresis* E41 41 2 value={0.5*(1+tanh(1e3*(V(43)-V(5)+5.7)))} R41 41 42 1k C41 42 2 20p R42 42 43 800k R43 43 2 200k S41 53 2 42 2 S_41 .MODEL S_41 VSWITCH Roff=1e6 Ron=100 Voff=0.4 Von=0.6 * Block 5: Current Sense Comparator* G51 2 51 5 4 1m ; input amplifier C51 2 4 3p ; input capacitance * SET input current; asymptote input nodes 4 and 2, outputs 4 and 2 .param xx5=5 yy5=16u nn5=32;input corner, output limit, asymptote power .param aa5={xx5**nn5} G52 4 2 value={yy5*(V(4)-V(2))/(aa5+(V(4)-V(2))**nn5)**(1/nn5)} R51 2 52 10.417k R52 52 51 20.833k S51 52 2 66 2 S_51 .MODEL S_51 VSWITCH Roff=10e6 Ron=1.0 Voff=2.5V Von=2.8V C52 51 2 0.5p G53 53 2 value={0.01*tanh(100*(V(51)-V(21)))} ;comparator C54 53 2 1f V51 54 2 700mV D51 54 53 Dclamp V52 55 2 8V D52 53 55 Dclamp * Block 6: Comp Delay and gate driver* R64 53 63 10Meg ; input filter with C61 C61 63 2 0.0015p ; G61 61 65 Value={0.1*(max(V(63)-V(65)-0.5,0))**2*(V(61)-V(65))} G62 65 62 Value={0.1*(max(V(65)-V(63)-0.5,0))**2*(V(65)-V(62))} R66 61 65 10meg R67 65 62 10meg R61 5 61 1.2 R62 62 2 1.2 R63 65 2 10k R65 65 64 1 ; driver current sense R68 66 64 49 ; output resistance-1 ohm C62 2 66 25f * Block 7: Output NMOS * S71 72 71 66 71 S_71 .MODEL S_71 VSWITCH Roff=10e6 Ron=0.25 Voff=2.5V Von=2.8V R72 72 1 50m ; on resistance = R72 + R73 + Ron(S71) R73 71 2 50m C73 72 71 100p C71 66 71 40p C72 72 66 15p * Block 8: Supply Current * G81 5 2 Value={(300u*(V(11)-V(2))/VOH1)+0.6u*(V(5)-V(2))} * Block 9: Protection diodes D91 2 1 D_1 ;SW D92 2 5 D_1 ;VIN D93 2 3 D_2 ;CTRL D94 5 4 D_2 ;SET forward D95 4 5 D_2 ;SET reverse .model Dclamp D Is=2.682n N=1.836 Rs=.5664 Ikf=44.17m Cjo=4p M=.3333 Vj=.5 .model D_1 D IS=1e-14 BV=40 .model D_2 D IS=1e-14 BV=6.5 .ends AL8805 * ===================================================================== * * (c) 2013 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 4949 Hedgcoxe Road, Suite 200, Plano, TX 75024, USA *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *DATE=23/07/2015 *VERSION=1 *PIN ORDER 1:EN 2:OUT 3:OUT 4:GND 5:OUT 6:Rext .SUBCKT BCR420UW6 1 2 3 4 5 6 Q1 5 8 6 BCRNPN R1 1 8 20K TC1=0.2m R2 6 4 95 TC1=2m Rshort23 2 3 10u Rshort35 3 5 10u D1 8 9 BCRdiode D2 9 4 BCRdiode .MODEL BCRNPN NPN IS=300e-11 NF=1.2 ISE=30e-15 NE=1.2 BF=350 + VAF=10 IKF=300m ISC=2e-13 NC=1.2 BR=15 NR=1 RE=0.01 + RB=0.33 RC=0.01 CJE=60e-12 VJE=0.55 MJE=0.36 CJC=15e-12 VJC=0.5 + MJC=0.35 TF=1e-9 TR=4e-9 QUASIMOD=1 RCO=1 GAMMA=1.3e-9 NK=.55 + XTB=1.4 TRE1=0.004 TRB1=0.003 TRC1=0.004 .model BCRdiode D(IS=3f RS=.01 N=1.05 IKF=1m CJO=.5p M=0.3 VJ=0.7 + BV=3 XTI=12.5) .ENDS .SIMULATOR DEFAULT *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *DATE=23/07/2015 *VERSION=1 *PIN ORDER 1:EN 2:OUT 3:OUT 4:GND 5:OUT 6:Rext .SUBCKT BCR421UW6 1 2 3 4 5 6 Q1 5 8 6 BCRNPN R1 1 8 1.5K TC1=0.2m R2 6 4 95 TC1=2m Rshort23 2 3 10u Rshort35 3 5 10u D1 8 9 BCRdiode D2 9 4 BCRdiode .MODEL BCRNPN NPN IS=300e-11 NF=1.2 ISE=30e-15 NE=1.2 BF=350 + VAF=10 IKF=300m ISC=2e-13 NC=1.2 BR=15 NR=1 RE=0.01 + RB=0.33 RC=0.01 CJE=60e-12 VJE=0.55 MJE=0.36 CJC=15e-12 VJC=0.5 + MJC=0.35 TF=1e-9 TR=4e-9 QUASIMOD=1 RCO=1 GAMMA=1.3e-9 NK=.6 + XTB=1.4 TRE1=0.004 TRB1=0.003 TRC1=0.004 .model BCRdiode D(IS=10f RS=.01 N=1.05 IKF=1m CJO=.5p M=0.3 VJ=0.7 + BV=3 XTI=10) .ENDS .SIMULATOR DEFAULT *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *DATE=23/07/2015 *VERSION=1 *PIN ORDER 1:EN 2:OUT 3:OUT 4:GND 5:OUT 6:Rext .SUBCKT BCR421UW6 1 2 3 4 5 6 Q1 5 8 6 BCRNPN R1 1 8 1.5K TC1=0.2m R2 6 4 95 TC1=2m Rshort23 2 3 10u Rshort35 3 5 10u D1 8 9 BCRdiode D2 9 4 BCRdiode .MODEL BCRNPN NPN IS=300e-11 NF=1.2 ISE=30e-15 NE=1.2 BF=350 + VAF=10 IKF=300m ISC=2e-13 NC=1.2 BR=15 NR=1 RE=0.01 + RB=0.33 RC=0.01 CJE=60e-12 VJE=0.55 MJE=0.36 CJC=15e-12 VJC=0.5 + MJC=0.35 TF=1e-9 TR=4e-9 QUASIMOD=1 RCO=1 GAMMA=1.3e-9 NK=.6 + XTB=1.4 TRE1=0.004 TRB1=0.003 TRC1=0.004 .model BCRdiode D(IS=10f RS=.01 N=1.05 IKF=1m CJO=.5p M=0.3 VJ=0.7 + BV=3 XTI=10) .ENDS .SIMULATOR DEFAULT *DIODES_INC_SPICE_MODEL *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=5OCT2011 *VERSION=1 *PINS ORDER OUT BIAS EN GND FB Rext .SUBCKT AL5802 1 2 3 4 5 6 Q1 1 3 6 T2 Q2 3 5 4 T1 R1 2 3 10K TC1=-4E-3 .MODEL T2 NPN IS=2.6E-14 NF=1 BF=300 ISE=4.5E-15 NE=1.5 + BR=5 ISC=2E-14 NC=1.3 NR=1 CJC=5.6E-12 MJC=0.24 VJC=0.4 + CJE=13.49E-12 MJE=0.37 VJE=0.75 .MODEL T1 NPN IS=1E-14 NF=1 BF=150 ISE=8E-15 NE=1.5 + BR=1.5 ISC=1.2E-13 NC=1.5 NR=1 CJC=5.279E-12 MJC=0.28 VJC=0.5 + CJE=8.92E-12 MJE=0.36 VJE=0.73 .ENDS .SIMULATOR DEFAULT * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *TITLE=BCR401UW6 *DATE=12/05/2016 *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *VERSION=1 *PIN ORDER 1:GND 2:OUT 3:OUT 4:VS 5:OUT 6:Rext .SUBCKT BCR401UW6 1 6 2 5 3 4 Q1 5 8 6 BCRPNP R1 8 1 22K TC=2m,8u R2 6 4 91 TC=3.5m,6u Rshort23 2 3 1m Rshort35 3 5 1m D1 4 9 BCRdiode D2 9 8 BCRdiode .MODEL BCRPNP PNP (IS=100.000f NF=0.995 BF=440 VAF=4.000 IKF=.14 + ISE=.55n NE=2.234 NR=1.005 BR=4.800 ISC=0.125P NC=2.074 + RB=1.00 RE=0.82 RC=1.4 + CJE=10P VJE=0.9000 MJE=0.4 + CJC=10P VJC=0.900 MJC=0.55 + TF=8.600n TR=2.604n XTB=1.900 EG=1.110 XTI=3.300) .model BCRdiode D(IS=2.4E-16 N=1.06 RS=2 IBV=1.00E-04 BV=7.5E+01 IKF=.15m + M=.45 CJO=1E-14 EG=1.11E+00 + TT=8.66E-012 VJ=1.1E+00 XTI=3.0E+00) .ENDS * (c) 2016 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *TITLE=BCR402UW6 *DATE=12/05/2016 *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *VERSION=1 *PIN ORDER 1:GND 2:OUT 3:OUT 4:VS 5:OUT 6:Rext .SUBCKT BCR402UW6 1 6 2 5 3 4 Q1 5 8 6 BCRPNP R1 8 1 22K TC=2m,8u R2 6 4 44 TC=3.5m,6u Rshort23 2 3 1m Rshort35 3 5 1m D1 4 9 BCRdiode D2 9 8 BCRdiode .MODEL BCRPNP PNP (IS=100.000f NF=0.995 BF=440 VAF=4.000 IKF=.14 + ISE=.55n NE=2.234 NR=1.005 BR=4.800 ISC=0.125P NC=2.074 + RB=1.00 RE=0.82 RC=1.4 + CJE=10P VJE=0.9000 MJE=0.4 + CJC=10P VJC=0.900 MJC=0.55 + TF=8.600n TR=2.604n XTB=1.900 EG=1.110 XTI=3.300) .model BCRdiode D(IS=2.4E-16 N=1.06 RS=2 IBV=1.00E-04 BV=7.5E+01 IKF=.15m + M=.45 CJO=1E-14 EG=1.11E+00 + TT=8.66E-012 VJ=1.1E+00 XTI=3.0E+00) .ENDS * (c) 2016 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *TITLE=BCR405UW6 *DATE=12/05/2016 *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *VERSION=1 *PIN ORDER 1:GND 2:OUT 3:OUT 4:VS 5:OUT 6:Rext .SUBCKT BCR405UW6 1 6 2 5 3 4 Q1 5 8 6 BCRPNP R1 8 1 22K TC=2m,8u R2 6 4 16.5 TC=4m,6u Rshort23 2 3 1m Rshort35 3 5 1m D1 4 9 BCRdiode D2 9 8 BCRdiode .MODEL BCRPNP PNP (IS=220.000f NF=0.995 BF=440 VAF=4.000 IKF=.18 + ISE=.55n NE=2.234 NR=1.005 BR=4.800 ISC=0.125P NC=2.074 + RB=1.00 RE=0.82 RC=1.4 + CJE=10P VJE=0.9000 MJE=0.4 + CJC=10P VJC=0.900 MJC=0.55 + TF=8.600n TR=2.604n XTB=1.900 EG=1.110 XTI=3.300) .model BCRdiode D(IS=2.4E-16 N=1.06 RS=2 IBV=1.00E-04 BV=7.5E+01 IKF=.08m + M=.45 CJO=1E-14 EG=1.11E+00 + TT=8.66E-012 VJ=1.1E+00 XTI=3.0E+00) .ENDS * (c) 2016 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *DATE=23/07/2015 *VERSION=1 *PIN ORDER 1:EN 2:OUT 3:OUT 4:GND 5:OUT 6:Rext .SUBCKT BCR420UW6Q 1 2 3 4 5 6 Q1 5 8 6 BCRNPN R1 1 8 20K TC1=0.2m R2 6 4 95 TC1=2m Rshort23 2 3 10u Rshort35 3 5 10u D1 8 9 BCRdiode D2 9 4 BCRdiode .MODEL BCRNPN NPN IS=300e-11 NF=1.2 ISE=30e-15 NE=1.2 BF=350 + VAF=10 IKF=300m ISC=2e-13 NC=1.2 BR=15 NR=1 RE=0.01 + RB=0.33 RC=0.01 CJE=60e-12 VJE=0.55 MJE=0.36 CJC=15e-12 VJC=0.5 + MJC=0.35 TF=1e-9 TR=4e-9 QUASIMOD=1 RCO=1 GAMMA=1.3e-9 NK=.55 + XTB=1.4 TRE1=0.004 TRB1=0.003 TRC1=0.004 .model BCRdiode D(IS=3f RS=.01 N=1.05 IKF=1m CJO=.5p M=0.3 VJ=0.7 + BV=3 XTI=12.5) .ENDS .SIMULATOR DEFAULT *ZETEX ZMR500 Spice Model v1.0 Last revision 31/01/07 * .SUBCKT ZMR500 1 2 3 * Connections IN_GND_OUT Q1 12 5 6 Qmod1 R1 4 2 Rmod1 1 R2 6 7 0.04 R4 10 2 15E3 R5 6 8 1E6 R6 5 6 1E6 D1 1 11 Dmod1 D2 11 12 Dmod1 R8 7 2 Rmod3 100E3 C4 8 10 130E-12 I1 2 4 5.001 G1 5 7 8 4 1 G2 2 4 1 2 5E-4 VS 3 7 0 F1 2 4 VS 0.5 .MODEL Qmod1 NPN (RC=10 RB=10 RE=10 CJC=2p CJE=5p) .MODEL Dmod1 D (IS=0.8E-15) .MODEL Rmod1 RES (TC1=-3.9E-5 TC2=-6.1E-7) .MODEL Rmod3 RES (TC1=-5E-4 TC2=0E-7) .ENDS ZMR500 * *$ * *ZETEX ZHT431 Spice Model v1.0 Last Revised 22/7/2005 * *NOTE: This is a simplified Model. Do not rely on this Model for *validation of circuit stability. It does not accurately replicate *stability boundary conditions with additional load capacitance. *Check stability by normal breadboarding techniques. * .SUBCKT ZHT431 1 2 3 *Connections Vz Vref Gnd *Input current L2 2 12 2E-9 Rin 12 13 Rmod1 20E6 Cin 12 13 1E-12 D1 13 12 Dmod D2 12 11 Dmod *Reference voltage, Voltage dependence Iref 13 21 2.4985E-3 Rref 21 13 Rmod2 1000 G1 21 13 11 13 1.43E-6 *Gain, time constant and clamp voltage G2 13 31 12 21 0.004 Rt1 31 13 1E8 Ct1 31 32 800E-12 Rt2 32 13 2000 Ct2 31 33 50E-12 Rt3 33 13 5 D3 31 13 Dmod D4 13 31 Dmod *Buffer,Output G3 13 41 13 31 0.22 L1 1 11 2E-9 Rz 11 42 10 D5 42 41 Dmod D6 13 41 Dmod D7 13 11 Dmod Rx 13 23 0.5 L3 3 23 2E-9 Rq 11 13 Rmod3 74E3 * .MODEL Rmod1 RES (TC1=2.95E-3 TC2=-5E-7) .MODEL Rmod2 RES (TC1=8.5E-6 TC2=-3.3E-7) .MODEL Rmod3 RES (TC1=-2.5E-3 TC2=2E-5) .MODEL Dmod D IS=1E-14 RS=0.1 BV=22 CJO=0.1E-12 .ENDS ZHT431 * *$ * *ZETEX ZR431 Spice Model v1.0 Last Revised 31/3/2005 * *NOTE: This is a simplified Model. Do not rely on this Model for *validation of circuit stability. It does not accurately replicate *stability boundary conditions with additional load capacitance. *Check stability by normal breadboarding techniques. * .SUBCKT ZR431 1 2 3 *Connections Vz Vref Gnd *Input current L2 2 12 2E-9 Rin 12 13 Rmod1 20E6 Cin 12 13 1E-12 D1 13 12 Dmod D2 12 11 Dmod *Reference voltage, Voltage dependence Iref 13 21 2.4985E-3 Rref 21 13 Rmod2 1000 G1 21 13 11 13 1.43E-6 *Gain, time constant and clamp voltage G2 13 31 12 21 0.004 Rt1 31 13 1E8 Ct1 31 32 800E-12 Rt2 32 13 2000 Ct2 31 33 50E-12 Rt3 33 13 5 D3 31 13 Dmod D4 13 31 Dmod *Buffer,Output G3 13 41 13 31 0.22 L1 1 11 2E-9 Rz 11 42 10 D5 42 41 Dmod D6 13 41 Dmod D7 13 11 Dmod Rx 13 23 0.5 L3 3 23 2E-9 Rq 11 13 Rmod3 74E3 * .MODEL Rmod1 RES (TC1=2.95E-3 TC2=-5E-7) .MODEL Rmod2 RES (TC1=8.5E-6 TC2=-3.3E-7) .MODEL Rmod3 RES (TC1=-2.5E-3 TC2=2E-5) .MODEL Dmod D IS=1E-14 RS=0.1 BV=22 CJO=0.1E-12 .ENDS ZR431 * *$ * *TITLE=ZXRE060 MACROMODEL *ORIGIN=DZSL_AG_GS *SIMULATOR=DIODES, SIMETRIX and PSPICE *DATE=3rd March 2011 *VERSION=1 *PIN_ORDER 1:PGND, 2:GND, 3:IN, 4:FB, 5:OUT * .subckt ZXRE060 PGND GND IN FB OUT * pins-----------1----2----3----4---5 * *Voltage reference with temperature effect E1 REFG 1 value={(0.6+1.72e-5*(TEMP-25)-1e-7*(TEMP-25)**2)*(0.5+0.5*tanh(4*(V(VCCL)-1.5)))} I1 VCCL 1 0.48m ; Supply current R1 REFG inm 48k R2 FB inp 48k C1 inm inp 0.2p I3 VCCL inp 45n ; input bias current I4 VCCL inm 45n * *First amplifier, limited to internal 2V supply E2 E2out 1 value={tanh(11.52*(V(inp)-V(inm)))} R7 E2out C3p 1 C3 C3p 1 250n ; 600kHz first breakpoint R3 C3p int 10k I2 VCCL int 2.5u C2 int 1 6p ; 2MHz second breakpoint *Second amplifier: transconductance *with sink current output voltage limit of 0 *source current output voltage limit of 2V G1 G1out 1 value={11e-6*(1-tanh(19.3*(v(int)-v(Q2e))))*tanh(10*max((V(G1out)-V(1)),0))} G2 VCCL G1out value={11e-6*(1+tanh(19.3*(V(int)-V(Q2e))))*tanh(10*max(2-(V(G1out)-V(1)),0))} * *Output Stage Q1 Q1c G1out Q2b 1 NPNCT R4 VCCL Q1c 250 R5 Q2b PGNDL 50k Q2 OUTL Q2b Q2e 1 NPNCT 5 R6 Q2e PGNDL 2.56 * L1 IN VCCL 2n L2 GND 1 2n L3 OUT OUTL 2n L4 PGND PGNDL 2n *Output transistor model from CT .model NPNCT NPN + is = 2.265f + nf = 1.000 + ise = 6.055f + ne = 1.562 + bf = 190.0 + ikf = 28.71m + vaf = 22.83 + nr = 1.008 + isc = 1.00000e-24 + nc = 1.543 + br = 34.83 + ikr = 1.250m + var = 19.13 + rb = 267.9 + irb = 1.250m + rbm = 100.0m + re = 802.9m + rc = 164.1m + cje = 163.1f + vje = 1.200 + mje = 151.0m + tf = 70.00p + xtf = 10.00 + vtf = 30.00 + itf = 200.0m + ptf = 34.00 + cjc = 380.6f + vjc = 410.0m + mjc = 360.0m + xcjc = 50.00m + tr = 6.00n + cjs = 525.2f + vjs = 401.0m + mjs = 179.2m + xtb = 200.0m + xti = 5.100 + eg = 1.110 + fc = 950.0m .ends ZXRE060 * * (c) 2011 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *ZETEX ZR431L Spice Model v1.0 Last Revised 21/10/05 * *NOTE: This is a simplified model. Do not rely on this model for *validation of circuit stability. It does not accurately replicate *stability boundary conditions when the device is operated with *additional load capacitance. Check the circuit stability by normal *breadboarding techniques. * .SUBCKT ZR431L 1 2 3 *Connections Vz Vref Gnd * *Input current Rin 2 3 Rmod1 1.127E7 D1 3 2 Dmod1 D2 2 1 Dmod1 Cin 2 3 10E-12 * *Quiescent current E1 50 3 2 3 1 D8 50 51 Dmod1 Rq 51 52 Rmod4 31E3 Vq 52 3 0 F1 1 3 Vq 1 Ro 1 3 1.5E6 * *Reference voltage Iref 3 21 1.2405E-3 Rref 21 3 Rmod2 1000 * *Voltage dependence G1 21 3 POLY(1) 1 3 0 1.57E-6 -0.97e-7 * *Gain G2 3 31 2 21 1e-7 Rt2 3 31 100E6 Rt3 3 32 3E6 Ct1 31 32 3E-13 D3 31 3 Dmod1 D4 3 31 Dmod1 * *Output *Q1 5 42 3 Qmod1 Cr1 7 31 1.5e-14 G3 41 3 31 3 0.8 Rc1 6 7 5 Rc2 7 5 5 D6 3 41 Dmod1 D7 3 1 Dmod1 L1 1 6 10nH D9 5 41 Dmod2 * .MODEL Qmod1 NPN BF=220 CJC=3E-12 CJE=3E-12 .MODEL Rmod1 RES (TC1=2.95E-3 TC2=-5E-7) .MODEL Rmod2 RES (TC1=1.5e-5 TC2=-3.5e-7) .MODEL Rmod3 RES (TC1=-2.5E-3 TC2=2E-5) .MODEL Rmod4 RES (TC1=1.7E-3 TC2=0) .MODEL Dmod1 D IS=5E-15 RS=4 BV=22 .MODEL Dmod2 D IS=1E-18 RS=.01 .ENDS ZR431L * *$ * *ZETEX ZRC250 Spice Model v1.0 Last Revised 11/07/06 * *NOTE: This is a simplified model. Confirm *any design using a physical circuit. * .SUBCKT ZRC250 1 3 *Connections Vz Gnd * *Quiescent current R1 1 49 320E3 R2 49 3 315.2E3 C1 49 1 4.5e-12 E1 50 3 49 3 1 D8 50 51 Dmod1 Rq 51 52 Rmod2 70E3 Vq 52 3 0 F1 1 3 Vq 1 * *Reference voltage Iref 3 21 1.2405E-3 Rref 21 3 Rmod1 1000 * *Gain G2 3 31 49 21 1e-7 Rt2 3 31 100E6 Rt3 3 32 3E6 Ct1 31 32 1.5E-13 D3 31 3 Dmod1 D4 3 31 Dmod1 * *Output G3 41 3 31 3 0.3 Rc1 6 5 10 D6 3 41 Dmod1 D7 3 6 Dmod1 L1 1 6 10nH D9 5 41 Dmod2 * .MODEL Qmod1 NPN BF=220 CJC=3E-12 CJE=3E-12 .MODEL Rmod1 RES (TC1=3.8e-5 TC2=-1e-7) .MODEL Rmod2 RES (TC1=1.7E-3 TC2=0) .MODEL Dmod1 D IS=5E-15 RS=4 BV=22 .MODEL Dmod2 D IS=1E-18 RS=.01 .ENDS ZRC250 * *$ * *TITLE=ZXCT1030 MACROMODEL *ORIGIN=DZSL_AG_GS *SIMULATOR=DIODES, SIMETRIX and PSPICE *DATE=14th June 2010 *VERSION=1 *PIN_ORDER 1:VCC, 2:VS-, 3:VS+, 4:GND, 5:COMPIN, 6:REF, 7:OUT, 8:COMPOUT * .subckt ZXCT1030 VCC VS- VS+ GND COMPIN REF OUT COMPOUT * pins------------1--2----3---4---5------6---7----8 * *Voltage reference R1 REFG REF 34 V1 REFG GND 1.24 * * Current sense amplifier limited by supply voltage R2 GND VCC 58k ;quiescent current at 5V R3 VS- AIN- 100k ;input filter C1 VS+ AIN- 1p ;input filter G1 VS+ OUT VALUE={ max(V(VS+)-V(AIN-),0)/150*tanh ( 20*max(V(VS+)-1.1-V(OUT),0) ) } R4 OUT GND 1.5k ;output resistance * *Comparator with VS- undervoltage detection and limited by supply voltage E2 DELTA GND VALUE = { V(OUT)-V(COMPIN)+0.015*V(E3OUT) } R5 DELTA COMPINT 1k ; delay filter C2 COMPINT GND 150p ; delay filter E3 E3OUT GND VALUE={ 0.5*(1+tanh(V(COMPINT)*10000)) } E4 S1IN GND VALUE={ ( V(E3OUT)+tanh(20*max(2.1-V(VS-),0)) )*tanh(20*max(V(VCC)-2.1,0)) } * *Output transistor open collector S1 COMPOUT GND S1IN GND _S1 .MODEL _S1 VSWITCH Roff=10e6 Ron=300 Voff=0.25 Von=0.75 * .ends ZXCT1030 * * (c) 2010 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * * * *Zetex ZXCT1080 Spice Model v2.0 Last Revised 28/04/08 * .SUBCKT ZXCT1080 1 2 3 4 5 * *Pins = Gnd, Vcc, S+, S-, Vout * R1 2 1 1E6 R2 4 1 1E8 R3 13 14 1000 R4 15 5 Rmod1 3.5 R5 16 12 9 R6 12 1 Rmod2 1 R7 3 1 1E6 R8 21 22 Rmod3 1 C1 14 1 3E-10 E1 16 1 value={((V(3)-V(4))*100)+(V(3)/466*(V(3)-V(4))+((V(2)-5)/100)+0.025+(V(21)*10))} E2 13 1 value={V(12)-((V(12)-V(2))*(TANH((V(12)-V(2))*110)+1)/2)} E3 15 1 value={V(14)*((TANH(V(14)*100)+1)/2)} I1 1 21 1 V1 1 22 1 .MODEL Rmod1 RES (TC1=6e-3 ) .MODEL Rmod2 RES (TC1=5e-6 ) .MODEL Rmod3 RES (TC1=5e-5 ) .ENDS ZXCT1080 * *$ * * (c) 2008 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA *ZETEX ZXCT1009F Spice Model v2.1 Last revision 02/02/07 * * .SUBCKT ZXCT1009F 1 2 3 * *Pins 1.Load 2.Vin 3.Iout * I1 4 3 4uA R6 4 3 20E6 R1 2 4 Rmod1 1 Q1 4 5 3 LargeN C1 5 11 3E-9 R5 11 3 10 R2 5 6 10E3 D1 6 8 Dmod R3 7 6 1 V2 8 3 10 E1 7 3 4 9 1000 V1 10 1 100e-3 I2 9 10 100E-3 R4 9 10 Rmod2 1 .MODEL Dmod D IS=1E-15 BV=20 IBV=1E-3 .MODEL LargeN NPN IS=3.8E-16 LOT/1/UNIFORM=50% DEV/GAUSS=1% + BF=220 LOT/1/UNIFORM=50% DEV/GAUSS=1% NK=.75 IKF=17e-3 VAF=60 + ISE=1.8E-16 NE=1.4 BR=.7 IKR=3e-2 VAR=7 ISC=5E-12 NC=1.321 RB=300 + RE=19.7 RC=63.4 CJC=51E-12 MJC=.42 VJC=.595 CJE=.21E-12 MJE=.33 + VJE=.7 TF=1.5E-10 TR=6E-9 XTF=0.3 VTF=6 ITF=5E-5 XTB=1.17 XTI=5.4 + KF=2E-13 AF=1.4 .MODEL Rmod1 RES (R=99.5 TC1=1E-3 TC2=1E-5 LOT/1/UNIFORM=1% DEV/GAUSS=0.5%) .MODEL Rmod2 RES (R=1 LOT/1/UNIFORM=1% DEV/GAUSS=0.5%) .ENDS * *$ * *TITLE=ZXCT1010 MACROMODEL *ORIGIN=DZSL_AG_GS *SIMULATOR=DIODES, SIMETRIX and PSPICE *DATE=14th July 2010 *VERSION=1 *PIN_ORDER 2:GND, 3:OUT, 4:S+, 5:S- (Pin 1 is NC) * .subckt ZXCT1010 GND OUT S+ S- * pins------------2---3--4--5 * R1 S- FILT 100k ;input filter C1 S+ FILT 20p ;input filter R2 S+ GND 1Meg ;quiescent current at 5V * Output as a voltage: first part of expression limits resonse to zero for negative input * tanh function limits output when supply is less than 1.1V above Vout E1 E1OUT GND VALUE={ max(V(S+)-V(FILT),0)*tanh( 20*max(V(S-)-1.1-V(OUT),0) ) } R3 E1OUT GND 1Meg * Transconductance = 1/100 A/V, with temperature dependence G1 S+ OUT VALUE={(V(E1OUT) - V(GND))*(1/100)*(1.01-0.0003*TEMP-6e-6*(TEMP**2)-5e-8*(TEMP**3)+2.7e-10*(TEMP**4))} .ends ZXCT1010 * * * (c) 2010 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * * *TITLE=ZXCT1082 MACROMODEL *ORIGIN=DZSL_AG_GS *SIMULATOR=DIODES, SIMETRIX and PSPICE *DATE=1st Sept 2011 *VERSION=2 *PIN_ORDER 1:OUT 2:GND, 3:S+, 4:S-, 5:VCC *Does not include temperature dependence of offset error, gain or input current. *Includes roughly approximated temperature effect of low voltage operating knee of VS- and VCC. .subckt ZXCT1082 OUT GND S+ S- VCC * pins------------1---2---3---4---5 .PARAM VTH1 = {1-0.004*(TEMP-25)} .PARAM KG ={1e-4/(2-VTH1)**2} ; rnom/(VON-VTH1)^2 D1 S+ 1 DHM D2 1 S- DHM D3 S- 2 DHM D4 2 S+ DHM D7 GND VCC DHM D8 GND S- DHM D9 GND S+ DHM *input current typ 1.7uA at Vcc=VS+=12V G1 S+ GND value={(1.4u+((V(VCC)-V(GND)-4)/42e6)+((V(S+)-V(GND))/6e8)) + *0.25*(1+tanh(10*(V(VCC)-V(GND)-3.5)))*(1+tanh(20*(V(S+)-V(GND)-1)))} G2 S- GND value={(1.4u+((V(VCC)-V(GND)-4)/42e6)+((V(S+)-V(GND))/6e8)) + *0.25*(1+tanh(10*(V(VCC)-V(GND)-3.5)))*(1+tanh(20*(V(S+)-V(GND)-1)))} R1 S+ FILT 10k ;input filter C1 FILT S- 1pf ;input filter R2 VCC GND 3.75Meg ;Vcc quiescent current, typ 16uA at 60V G3 S- SIN VALUE={0.1*((1+tanh(10*(V(S-)-V(FILT))))*tanh(50*max(V(S-)-V(SIN),0)) + +(-1+tanh(10*(V(S-)-V(FILT))))*tanh(50*max(V(SIN)-V(GND),0))) + *tanh(20*max(V(VCC)-VTH1,0))} C5 S- GND 3p C6 S+ GND 2p C4 SIN FILT 100f R3 S+ SIN 1G C2 SIN S+ 500f R6 S+ S+A 1k G4 S+A OUT VALUE={KG*(max(V(S+A)-V(SIN)-VTH1,0)**2)*(V(S+A)-V(OUT))} R4 S+ OUT 8G C3 SIN OUT 80f C7 OUT GND 1.25p * zener diode D5 SIN S+ DHM D6 S+ Z1 DHM I1 SIN Z1 0.192 RZ Z1 SIN 100 .model DHM D IS=6.3E-16 BV=65 .ends ZXCT1082 * * (c) 2011 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 4949 Hedgcoxe Road, Suite 200, Plano, TX 75024, USA *ZETEX ZXCT1008F Spice Model v1.0 Last revision 15/08/07 * * .SUBCKT ZXCT1008F 1 2 3 * *Pins 1.Load 2.Vin 3.Iout * I1 4 3 4uA R6 4 3 20E6 R1 2 4 Rmod1 1 Q1 4 5 3 LargeN C1 5 11 3E-9 R5 11 3 10 R2 5 6 10E3 D1 6 8 Dmod R3 7 6 1 V2 8 3 10 E1 7 3 4 9 1000 V1 10 1 100e-3 I2 9 10 100E-3 R4 9 10 Rmod2 1 .MODEL Dmod D IS=1E-15 BV=20 IBV=1E-3 .MODEL LargeN NPN IS=3.8E-16 LOT/1/UNIFORM=50% DEV/GAUSS=1% + BF=220 LOT/1/UNIFORM=50% DEV/GAUSS=1% NK=.75 IKF=17e-3 VAF=60 + ISE=1.8E-16 NE=1.4 BR=.7 IKR=3e-2 VAR=7 ISC=5E-12 NC=1.321 RB=300 + RE=19.7 RC=63.4 CJC=51E-12 MJC=.42 VJC=.595 CJE=.21E-12 MJE=.33 + VJE=.7 TF=1.5E-10 TR=6E-9 XTF=0.3 VTF=6 ITF=5E-5 XTB=1.17 XTI=5.4 + KF=2E-13 AF=1.4 .MODEL Rmod1 RES (R=99.5 TC1=1E-3 TC2=1E-5 LOT/1/UNIFORM=1% DEV/GAUSS=0.5%) .MODEL Rmod2 RES (R=1 LOT/1/UNIFORM=1% DEV/GAUSS=0.5%) .ENDS * *$ * *SRC=DMN3052L;DI_DMN3052L;MOSFETs N;Enh;30.0V 5.40A 32.0mohms Diodes Inc MOSFET *SYM=POWMOSN .SUBCKT DI_DMN3052L 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 14.2m RS 40 3 1.80m RG 20 2 27.8 CGS 2 3 473p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 374p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS NMOS(LEVEL=3 VMAX=62.5k THETA=80.0m + ETA=2.00m VTO=1.20 KP=40.0 .MODEL DCGD D (CJO=374p VJ=0.600 M=0.680 .MODEL DSUB D (IS=22.4n N=1.50 RS=83.3m BV=30.0 + CJO=125p VJ=0.800 M=0.420 TT=234n .MODEL DLIM D (IS=100U) .ENDS *SRC=DMN3112S;DI_DMN3112S;MOSFETs N;Enh;30.0V 5.80A 57.0mohms Diodes Inc MOSFET *SYM=POWMOSN .SUBCKT DI_DMN3112S 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 26.1m RS 40 3 2.42m RG 20 2 105 CGS 2 3 218p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 228p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS NMOS(LEVEL=3 VMAX=62.5k THETA=80.0m + ETA=2.00m VTO=2.20 KP=10.2 .MODEL DCGD D (CJO=228p VJ=0.600 M=0.680 .MODEL DSUB D (IS=24.1n N=1.50 RS=60.3m BV=30.0 + CJO=83.9p VJ=0.800 M=0.420 TT=239n .MODEL DLIM D (IS=100U) .ENDS * *Zetex ZVN4424Z Spice Model v1 Last Revised 28/7/08 * .SUBCKT ZVN4424Z 3 4 5 *------connections-------D-G-S M1 6 2 8 8 N4424AM M2 6 2 8 8 N4424AMS RG 4 2 35 RD 3 6 3.6 RS 8 5 0.15 RL 3 5 240E6 D1 5 3 N4424AD Egs2 13 8 2 8 1 Eds1 14 8 6 8 1 C1 2 8 145E-12 C2 2 3 11E-12 C3 15 14 235E-12 C4 16 8 226E-12 S1 2 15 14 13 SMOD1 S2 13 15 14 13 SMOD2 S3 16 13 13 8 SMOD3 S4 16 2 13 8 SMOD4 .MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=1 VOFF=2 .MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=2 VOFF=1 .MODEL SMOD3 VSWITCH RON=.001 ROFF=100 VON=-3 VOFF=-4 .MODEL SMOD4 VSWITCH RON=.001 ROFF=100 VON=-4 VOFF=-3 .MODEL N4424AM NMOS VTO=1.3 IS=1E-15 KP=0.85 +CBD=66.2E-12 PB=1 .MODEL N4424AMS NMOS VTO=.86 IS=1E-15 KP=0.0085 +CBD=.66E-12 PB=1 .MODEL N4424AD D IS=5.516E-13 RS=.2084 N=1.0078 .ENDS ZVN4424Z * *$ * * (c) 2008 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA *ZETEX ZVP4105A Spice Model v1.0 Last Revised 31/3/05 * .SUBCKT ZVP4105A 3 4 5 * NODES: DRAIN GATE SOURCE M1 3 2 5 5 MOD1 RG 4 2 167 RL 3 5 50E6 C1 2 5 26P C2 3 2 4P D1 3 5 DIODE1 * .MODEL MOD1 PMOS VTO=-1.709 RS=3.091 RD=0.979 IS=1E-15 KP=0.146 +CBD=12P PB=1 .MODEL DIODE1 D IS=1.072E-13 RS=0.527 N=1.077 .ENDS ZVP4105A * *$ * *SRC=MBR1030;DI_MBR1030;Diodes;Si; 30.0V 10.0A 5.00ns Diodes Inc. Schottky Barrier Rectifier .MODEL DI_MBR1030 D ( IS=2.62m RS=4.20m BV=30.0 IBV=100u + CJO=796p M=0.333 N=2.12 TT=7.20n ) *SRC=MBR1635;DI_MBR1635;Diodes;Si; 35.0V 16.0A 5.00ns Diodes Inc. Schottky .MODEL DI_MBR1635 D ( IS=138u RS=2.62m BV=35.0 IBV=31.0u + CJO=862p M=0.333 N=1.53 TT=7.20n ) *SRC=MBR1640;DI_MBR1640;Diodes;Si; 40.0V 16.0A 5.00ns Diodes Inc. Schottky .MODEL DI_MBR1640 D ( IS=138u RS=2.62m BV=40.0 IBV=31.0u + CJO=862p M=0.333 N=1.53 TT=7.20n ) *SRC=SBL3030CT;DI_SBL3030CT;Diodes;Si; 30.0V 30.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL3030CT D ( IS=200u RS=1.92m BV=30.0 IBV=1.00m + CJO=809p M=0.333 N=1.42 TT=14.4n ) *SRC=SBL3040CT;DI_SBL3040CT;Diodes;Si; 40.0V 30.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL3040CT D ( IS=200u RS=1.92m BV=40.0 IBV=1.00m + CJO=809p M=0.333 N=1.42 TT=14.4n ) *SRC=SBL4030PT;DI_SBL4030PT;Diodes;Si; 30.0V 40.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL4030PT D ( IS=10.9u RS=1.53m BV=30.0 IBV=1.00m + CJO=1.33n M=0.333 N=1.08 TT=14.4n ) *SRC=SBL4035PT;DI_SBL4035PT;Diodes;Si; 35.0V 40.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL4035PT D ( IS=10.9u RS=1.53m BV=35.0 IBV=1.00m + CJO=1.33n M=0.333 N=1.08 TT=14.4n ) *SRC=SBL4040PT;DI_SBL4040PT;Diodes;Si; 40.0V 40.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL4040PT D ( IS=10.9u RS=1.53m BV=40.0 IBV=1.00m + CJO=1.33n M=0.333 N=1.08 TT=14.4n ) *SRC=SBL4045PT;DI_SBL4045PT;Diodes;Si; 45.0V 40.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL4045PT D ( IS=10.9u RS=1.53m BV=45.0 IBV=1.00m + CJO=1.33n M=0.333 N=1.08 TT=14.4n ) *SRC=SBL4050PT;DI_SBL4050PT;Diodes;Si; 50.0V 40.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL4050PT D ( IS=53.0u RS=1.26m BV=50.0 IBV=1.00m + CJO=1.33n M=0.333 N=1.70 TT=14.4n ) *SRC=SBL4060PT;DI_SBL4060PT;Diodes;Si; 60.0V 40.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL4060PT D ( IS=53.0u RS=1.26m BV=60.0 IBV=1.00m + CJO=1.33n M=0.333 N=1.70 TT=14.4n ) *SRC=DMN3052LSS;DI_DMN3052LSS;MOSFETs N;Enh;30.0V 7.10A 30.0mohms DIodes Inc MOSFET *SYM=POWMOSN .SUBCKT DI_DMN3052LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 13.2m RS 40 3 1.75m RG 20 2 21.1 CGS 2 3 471p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 384p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS NMOS(LEVEL=3 VMAX=62.5k THETA=80.0m + ETA=2.00m VTO=1.20 KP=38.0 .MODEL DCGD D (CJO=384p VJ=0.600 M=0.680 .MODEL DSUB D (IS=29.5n N=1.50 RS=57.7m BV=30.0 + CJO=125p VJ=0.800 M=0.420 TT=254n .MODEL DLIM D (IS=100U) .ENDS *SRC=DMN3112SSS;DI_DMN3112SSS;MOSFETs N;Enh;30.0V 6.00A 57.0mohms Diodes Inc MOSFET *SYM=POWMOSN .SUBCKT DI_DMN3112SSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 26.1m RS 40 3 2.42m RG 20 2 56.0 CGS 2 3 218p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 458p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS NMOS(LEVEL=3 VMAX=62.5k THETA=80.0m + ETA=1.93m VTO=2.20 KP=4.11 .MODEL DCGD D (CJO=458p VJ=0.600 M=0.680 .MODEL DSUB D (IS=24.9n N=1.50 RS=75.0m BV=30.0 + CJO=128p VJ=0.800 M=0.420 TT=239n .MODEL DLIM D (IS=100U) .ENDS *---------- DMG8880LSS Spice Model ----------.SUBCKT DMG8880LSS 10 20 30 * TERMINALS: D G SM1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004237 RS 30 3 0.001 RG 20 2 0.97 CGS 2 3 1.154E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.22E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 9.897E+005 ETA = 4.441E-017 VTO = 2.123 + TOX = 6E-008 NSUB = 1E+017 KP = 68.03 KAPPA = 416.1 U0 = 202.1 .MODEL DCGD D CJO = 7.076E-010 VJ = 0.225 M = 0.3502 .MODEL DSUB D IS = 2.798E-010 N = 1.195 RS = 0.003607 BV = 35 CJO = 1.85E-010 VJ = 0.7412 M = 0.6747 .MODEL DLIM D IS = 0.0001 .ENDS*Diodes DMG8880LSS Spice Model v1.0 Last Revised 2010/9/21 *---------- DMC3018LSD Spice Model ---------- *NMOS .SUBCKT DMC3018LSD_N 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005805 RS 30 3 0.001 RG 20 2 1.32 CGS 2 3 6.922E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.0143 VTO = 2.028 + TOX = 6E-008 NSUB = 1E+017 KP = 21.95 KAPPA = 105 U0 = 200 .MODEL DCGD D CJO = 4.611E-010 VJ = 0.3568 M = 0.4267 .MODEL DSUB D IS = 2.567E-010 N = 1.254 RS = 0.01257 BV = 35 CJO = 8.267E-011 VJ = 0.4558 M = 0.5515 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC3018LSD_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02496 RS 30 3 0.001 RG 20 2 11.1 CGS 2 3 8.938E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8.92E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 2.425E+005 KP = 27.53 ETA = 0.0001 + TOX = 6E-008 NSUB = 1E+017 KAPPA = 2.932 VTO = -1.9 .MODEL DCGD D CJO = 4.013E-010 VJ = 0.3844 M = 0.3457 .MODEL DSUB D IS = 2.245E-010 N = 1.343 RS = 0.01819 + BV = 35 CJO = 7.964E-011 VJ = 3.068 M = 0.9583 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC3018LSD Spice Model v2.0 Last Revised 2012/8/6 * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=22/02/2005 *VERSION=2 *PIN_ORDER D G S * .SUBCKT ZXMN2A02X8 30 40 50 M1 6 2 7 7 Nmod L=1.16E-6 W=2.3 M2 7 2 7 6 Pmod L=1.3E-6 W=1.3 RG 4 2 1 RIN 2 5 1E12 RD 3 6 Rdmod 0.0045 RS 7 5 Rdmod 0.01 RL 3 5 3E9 C1 2 5 10E-12 C2 3 2 5E-12 D1 5 3 Dbodymod LD 3 30 1.5E-9 LG 4 40 1.0E-9 LS 5 50 1.0E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=4.5E-8 NSUB=10E16 +VTO=1.365 KP=3.6E-5 NFS=2E11 KAPPA=0.1 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=4.5E-8 NSUB=1.5E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=2E-11 RS=.015 XTI=1.5 TRS1=1.5e-3 TT=7e-9 +CJO=450e-12 BV=22) .MODEL Rdmod RES (TC1=3e-3 TC2=6E-6) .ENDS * *$ *SRC=DNLS160;DI_DNLS160;BJTs NPN; Si; 60.0V 1.00A 300MHz .MODEL DI_DNLS160 NPN (IS=3.69f NF=1.00 BF=322 VAF=139 + IKF=0.989 ISE=6.05f NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=1.50 RE=48.0m RB=0.192 RC=19.2m + XTB=1.5 CJE=120p VJE=1.10 MJE=0.500 CJC=20.8p VJC=0.300 + MJC=0.300 TF=480p TR=83.0n EG=1.12 ) *SRC=DNLS160V;DI_DNLS160V;BJTs NPN; Si; 60.0V 1.00A 300MHz .MODEL DI_DNLS160V NPN (IS=3.69f NF=1.00 BF=322 VAF=139 + IKF=0.989 ISE=6.05f NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=1.50 RE=48.0m RB=0.192 RC=19.2m + XTB=1.5 CJE=120p VJE=1.10 MJE=0.500 CJC=20.8p VJC=0.300 + MJC=0.300 TF=480p TR=83.0n EG=1.12 ) * .MODEL FZTA42 NPN IS =5E-14 NF =1 BF =230 IKF=250E-3 +VAF=610 ISE=9E-15 NE =1.28 RCO=75 GAMMA=3.1E-7 +NR =1 BR =5 VAR=45 ISC=5e-12 NC =1.3 +RB =7 RE =0.07 RC =0.07 QUASIMOD=1 +CJC=9.26E-12 MJC=0.241 VJC=0.3905 CJE=68.6E-12 +TF =1.1E-9 TR =0.9e-6 XTB=1.4 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=27JUL2010 *VERSION=2 * .MODEL ZXTN5551Z NPN IS=6.5E-15 NF=1 BF=110 VAF=288 ISE=1.0E-14 + NE=1.5 NR=1 BR=4.5 VAR=70 ISC=3E-12 NC=1.35 RC=0.5 RB =0.26 RE =0.23 + CJC=6.1E-12 MJC=0.31 VJC=0.4 CJE=57E-12 MJE=0.35 VJE=0.8 TF=0.2E-9 + TR=1.5E-6 XTB=1.4 QUASIMOD=1 RCO=170 VO=35 GAMMA=2.2E-7 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=18/09/2014 *VERSION=1 .SUBCKT DMG4406LSS 10 20 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 5E-3 RS 23 3 Rmod1 4E-3 RG 20 22 5 RIN 20 23 2E11 RDS 10 23 6E9 CGS 2 3 1250E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1250E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 0.0015 LS 30 23 1n .MODEL Nmod1 NMOS (LEVEL=3 VTO=2.1 TOX=5.8E-8 NSUB=3E+16 KP=130 NFS=1E+12 IS=.5E-15 N=10) .MODEL DCGD D (CJO =260E-12 VJ = 0.5 M = 0.43 T_ABS=25) .MODEL DSUB D (IS = 1E-12 N=1.025 RS=0.002 BV=35 CJO=400E-12 VJ=0.42 M=0.5 TT=11E-9 TRS1=2E-3) .MODEL DLIM D (IS=100U N=1 T_ABS=25) .MODEL Rmod1 RES (TC1=.1e-3 TC2=12E-6) .ENDS * (c) 2014 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL PD3Z284C5V6 *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=02/10/15 *VERSION=1 *PINS 1=A 2=K .SUBCKT PD3Z284C5V6 1 2 * Terminals A K D1 1 2 DF DR 3 1 DR VZ 2 3 3 .MODEL DF D ( IS=24f RS=.3 N=1.1 + CJO=84p VJ=0.66 M=0.330 TT=50.1n BV=5.7 IBV=1m TBV1=.281m) .MODEL DR D ( IS=8f RS=12k N=2 EG=1.4) .ENDS * (c) 2015 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *SRC=SDM6CC;DI_SDM6CC;Diodes;Si; 30.0V 0.200A 1.30ns Diodes INC Schottky Diode .MODEL DI_SDM6CC D ( IS=2.73u RS=0.653 BV=30.0 IBV=700n + CJO=5.30p M=0.333 N=1.98 *ZETEX ZTX601 Spice Model v1.0 Last Revised 23/12/04 * .SUBCKT ZTX601 1 2 3 * C B E Q1 1 2 4 SUB601 Q2 1 4 3 SUB601 2.74 * .MODEL SUB601 NPN IS=8.354E-14 BF=70 VAF=18.3 IKF=0.25 ISE=2E-13 +NE=1.45 BR=2 VAR=6.5 NR=1 IKR=0.2 ISC=6.138E-13 NC=1.46 RB=0.5 RE=0.25 +RC=0.3 CJE=83.7E-12 VJE=0.6868 MJE=0.3362 CJC=8.6E-12 VJC=0.3679 +MJC=0.3607 TF=1E-9 TR=1800E-9 .ENDS ZTX601 * *$ * *ZETEX ZTX601B Spice Model v1.0 Last Revised 9/5/94 * .SUBCKT ZTX601B 1 2 3 * C B E Q1 1 2 4 SUB601B Q2 1 4 3 SUB601B 2.74 * .MODEL SUB601B NPN IS=8.354E-14 BF=130 VAF=18.3 IKF=0.2 ISE=2E-13 +NE=1.45 BR=2 VAR=6.5 NR=1 IKR=0.2 ISC=6.138E-13 NC=1.46 RB=0.5 RE=0.25 +RC=0.3 CJE=83.7E-12 VJE=0.6868 MJE=0.3362 CJC=8.6E-12 VJC=0.3679 MJC=0.3607 +TF=1E-9 TR=1800E-9 .ENDS ZTX601B * *$ * *SRC=SBL1030;DI_SBL1030;Diodes;Si; 30.0V 10.0A 5.00ns Diodes Inc. Schottky .MODEL DI_SBL1030 D ( IS=759u RS=4.20m BV=30.0 IBV=1.00m + CJO=2.12n M=0.333 N=1.70 TT=7.20n ) *SRC=SBL1060;DI_SBL1060;Diodes;Si; 60.0V 10.0A 5.00ns Diodes Inc. Schottky .MODEL DI_SBL1060 D ( IS=210u RS=4.22m BV=60.0 IBV=1.00m + CJO=2.12n M=0.333 N=2.03 TT=7.20n ) *SRC=SBL1035;DI_SBL1035;Diodes;Si; 35.0V 10.0A 5.00ns Diodes Inc. Schottky .MODEL DI_SBL1035 D ( IS=759u RS=4.20m BV=35.0 IBV=1.00m + CJO=2.12n M=0.333 N=1.70 TT=7.20n ) *SRC=SBL1040;DI_SBL1040;Diodes;Si; 40.0V 10.0A 5.00ns Diodes Inc. Schottky .MODEL DI_SBL1040 D ( IS=759u RS=4.20m BV=40.0 IBV=1.00m + CJO=2.12n M=0.333 N=1.70 TT=7.20n ) *SRC=SBL1045;DI_SBL1045;Diodes;Si; 45.0V 10.0A 5.00ns Diodes Inc. Schottky .MODEL DI_SBL1045 D ( IS=759u RS=4.20m BV=45.0 IBV=1.00m + CJO=2.12n M=0.333 N=1.70 TT=7.20n ) *SRC=SBL1050;DI_SBL1050;Diodes;Si; 50.0V 10.0A 5.00ns Diodes Inc. Schottky .MODEL DI_SBL1050 D ( IS=210u RS=4.22m BV=50.0 IBV=1.00m + CJO=2.12n M=0.333 N=2.03 TT=7.20n ) *SRC=1N5401;DI_1N5401;Diodes;Si; 100V 3.00A 3.00us Diodes Inc. Standard Rectifier .MODEL DI_1N5401 D ( IS=63.0n RS=14.1m BV=100 IBV=10.0u + CJO=125p M=0.333 N=1.70 TT=4.32u ) *SRC=1N5402;DI_1N5402;Diodes;Si; 200V 3.00A 3.00us Diodes Inc. Standard Rectifier .MODEL DI_1N5402 D ( IS=63.0n RS=14.1m BV=200 IBV=10.0u + CJO=125p M=0.333 N=1.70 TT=4.32u ) *SRC=1N5404;DI_1N5404;Diodes;Si; 400V 3.00A 3.00us Diodes Inc. Standard Rectifier .MODEL DI_1N5404 D ( IS=63.0n RS=14.1m BV=400 IBV=10.0u + CJO=125p M=0.333 N=1.70 TT=4.32u ) *SRC=1N5406;DI_1N5406;Diodes;Si; 600V 3.00A 3.00us Diodes Inc. Standard Rectifier .MODEL DI_1N5406 D ( IS=63.0n RS=14.1m BV=600 IBV=10.0u + CJO=53.0p M=0.333 N=1.70 TT=4.32u ) *SRC=1N5407;DI_1N5407;Diodes;Si; 800V 3.00A 3.00us Diodes Inc. Standard Rectifier .MODEL DI_1N5407 D ( IS=63.0n RS=14.1m BV=800 IBV=10.0u + CJO=53.0p M=0.333 N=1.70 TT=4.32u ) *SRC=1N5408;DI_1N5408;Diodes;Si; 1.00kV 3.00A 3.00us Diodes Inc. Standard Rectifier .MODEL DI_1N5408 D ( IS=63.0n RS=14.1m BV=1.00k IBV=10.0u + CJO=53.0p M=0.333 N=1.70 TT=4.32u ) *SRC=1N5400;DI_1N5400;Diodes;Si; 50.0V 3.00A 3.00us Diodes Inc. Standard Rectifier .MODEL DI_1N5400 D ( IS=63.0n RS=14.1m BV=50.0 IBV=10.0u + CJO=125p M=0.333 N=1.70 TT=4.32u ) *ZETEX ZXCL280 Spice Model v1.0 Last revision 13/12/06 * *NOTE: This is a simplified model not all features are modeled. * .subckt ZXCL280 1 2 3 4 * NODES: GND EN VIN VOUT M1 4 8 3 3 MOD1 C1 8 3 126E-12 C2 4 8 20E-12 C3 1 10 130E-12 C4 1 11 2E-9 C5 1 15 10E-9 C6 13 1 400E-12 D1 4 3 Dmod1 D2 5 7 Dmod2 D3 1 5 Dmod2 R1 4 9 63.25E3 R2 9 1 50E3 R30 5 6 10E3 R3 10 5 3000 R4 11 5 180E3 R5 15 5 2E6 R6 2 13 1E6 R7 2 1 55E6 R8 3 4 50E6 R9 5 8 34 R10 1 12 Rmod1 1 S1 3 5 13 1 Smod1 E1 3 6 12 9 100 E2 7 1 3 1 1.0 I1 1 12 1.25 .MODEL MOD1 PMOS (VTO=-0.82 RS=0.6 RD=0.2 IS=1E-15 KP=0.73 CBD=60E-12 KF=2e-19 AF=1.22) .MODEL Dmod1 D (IS=1E-13 RS=0.5 N=1) .MODEL Dmod2 D (IS=1E-13 RS=0.1 N=0.5) .MODEL Rmod1 RES (TC1=-3E-5 TC2=-1E-7) .MODEL Smod1 VSWITCH (RON=1 ROFF=1E6 VON=0 VOFF=1) .ENDS ZXCL280 * *$ * *ZETEX ZXCL300 Spice Model v1.0 Last revision 13/12/06 * *NOTE: This is a simplified model not all features are modeled. * .subckt ZXCL300 1 2 3 4 * NODES: GND EN VIN VOUT M1 4 8 3 3 MOD1 C1 8 3 126E-12 C2 4 8 20E-12 C3 1 10 130E-12 C4 1 11 2E-9 C5 1 15 10E-9 C6 13 1 400E-12 D1 4 3 Dmod1 D2 5 7 Dmod2 D3 1 5 Dmod2 R1 4 9 71.4E3 R2 9 1 50E3 R30 5 6 10E3 R3 10 5 3000 R4 11 5 180E3 R5 15 5 2E6 R6 2 13 1E6 R7 2 1 55E6 R8 3 4 50E6 R9 5 8 34 R10 1 12 Rmod1 1 S1 3 5 13 1 Smod1 E1 3 6 12 9 100 E2 7 1 3 1 1.0 I1 1 12 1.25 .MODEL MOD1 PMOS (VTO=-0.82 RS=0.6 RD=0.2 IS=1E-15 KP=0.73 CBD=60E-12 KF=2e-19 AF=1.22) .MODEL Dmod1 D (IS=1E-13 RS=0.5 N=1) .MODEL Dmod2 D (IS=1E-13 RS=0.1 N=0.5) .MODEL Rmod1 RES (TC1=-3E-5 TC2=-1E-7) .MODEL Smod1 VSWITCH RON=1 ROFF=1E6 VON=0 VOFF=1 .ENDS ZXCL300 * *$ * *ZETEX ZXMN3A02N8 Spice Model v2.0 Last Revised 22/2/05 * * .SUBCKT ZXMN3A02N8 30 40 50 *----connections----D-G-S M1 6 2 7 7 Nmod L=1.16E-6 W=2.3 M2 7 2 7 6 Pmod L=1.3E-6 W=1.3 RG 4 2 3 RIN 2 5 1E12 RD 3 6 Rdmod 0.001 RS 7 5 Rdmod 0.018 RL 3 5 3E9 C1 2 5 8.5E-12 C2 3 2 3E-12 D1 5 3 Dbodymod LD 3 30 1.3E-9 LG 4 40 1.2E-9 LS 5 50 1.2E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E17 VTO=2 +KP=5E-5 NFS=2E11 KAPPA=0.1 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1.5E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=4E-12 RS=.014 IKF=3.6 TRS1=1.5e-3 +CJO=1070e-12 BV=33) .MODEL Rdmod RES (TC1=4e-3 TC2=1E-5) .ENDS * *$ * *SRC=1N4001;DI_1N4001;Diodes;Si; 50.0V 1.00A 3.00us Diodes, Inc. diode .MODEL DI_1N4001 D ( IS=76.9p RS=42.0m BV=50.0 IBV=5.00u + CJO=39.8p M=0.333 N=1.45 TT=4.32u ) *SRC=B160B;DI_B160B;Diodes;Si; 60.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B160B D ( IS=15.7u RS=42.0m BV=60.0 IBV=500u + CJO=133p M=0.333 N=1.70 TT=7.20n ) *SRC=B170;DI_B170;Diodes;Si; 70.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B170 D ( IS=89.3u RS=42.2m BV=70.0 IBV=500n + CJO=66.3p M=0.333 N=2.45 TT=7.20n ) *SRC=B170B;DI_B170B;Diodes;Si; 70.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B170B D ( IS=89.3u RS=42.2m BV=70.0 IBV=500n + CJO=66.3p M=0.333 N=2.45 TT=7.20n ) *SRC=B180;DI_B180;Diodes;Si; 80.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B180 D ( IS=89.3u RS=42.2m BV=80.0 IBV=500n + CJO=66.3p M=0.333 N=2.45 TT=7.20n ) *SRC=B180B;DI_B180B;Diodes;Si; 80.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B180B D ( IS=89.3u RS=42.2m BV=80.0 IBV=500n + CJO=66.3p M=0.333 N=2.45 TT=7.20n ) *SRC=B190;DI_B190;Diodes;Si; 90.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B190 D ( IS=89.3u RS=42.2m BV=90.0 IBV=500n + CJO=66.3p M=0.333 N=2.45 TT=7.20n ) *SRC=B190B;DI_B190B;Diodes;Si; 90.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B190B D ( IS=89.3u RS=42.2m BV=90.0 IBV=500n + CJO=66.3p M=0.333 N=2.45 TT=7.20n ) *SRC=B2100;DI_B2100;Diodes;Si; 100.0V 2.00A 10.0ns Diodes Inc Schottky .MODEL DI_B2100 D ( IS=746u RS=21.0m BV=100.0 IBV=500u + CJO=179p M=0.333 N=2.87 TT=14.4n ) *SRC=B220;DI_B220;Diodes;Si; 20.0V 2.00A 1.00ns Diodes Inc. .MODEL DI_B220 D ( IS=7.98u RS=13.4m BV=20.0 IBV=500u + CJO=370p M=0.333 N=1.13 TT=1.44n ) *SRC=B220A;DI_B220A;Diodes;Si; 20.0V 2.00A 1.00ns Diodes Inc. .MODEL DI_B220A D ( IS=7.98u RS=13.4m BV=20.0 IBV=500u + CJO=370p M=0.333 N=1.13 TT=1.44n ) *SRC=B230;DI_B230;Diodes;Si; 30.0V 2.00A 1.00ns Diodes Inc. .MODEL DI_B230 D ( IS=7.98u RS=13.4m BV=30.0 IBV=500u + CJO=370p M=0.333 N=1.13 TT=1.44n ) *SRC=B230A;DI_B230A;Diodes;Si; 30.0V 2.00A 1.00ns Diodes Inc. .MODEL DI_B230A D ( IS=7.98u RS=13.4m BV=30.0 IBV=500u + CJO=370p M=0.333 N=1.13 TT=1.44n ) *SRC=B240;DI_B240;Diodes;Si; 40.0V 2.00A 1.00ns Diodes Inc. .MODEL DI_B240 D ( IS=7.98u RS=13.4m BV=40.0 IBV=500u + CJO=370p M=0.333 N=1.13 TT=1.44n ) *SRC=B240A;DI_B240A;Diodes;Si; 40.0V 2.00A 1.00ns Diodes Inc. .MODEL DI_B240A D ( IS=7.98u RS=13.4m BV=40.0 IBV=500u + CJO=370p M=0.333 N=1.13 TT=1.44n ) *SRC=B250;DI_B250;Diodes;Si; 50.0V 2.00A 1.00ns Diodes Inc. .MODEL DI_B250 D ( IS=6.08u RS=14.9m BV=50.0 IBV=500u + CJO=370p M=0.333 N=1.55 TT=1.44n ) *SRC=B250A;DI_B250A;Diodes;Si; 50.0V 2.00A 1.00ns Diodes Inc. .MODEL DI_B250A D ( IS=6.08u RS=14.9m BV=50.0 IBV=500u + CJO=370p M=0.333 N=1.55 TT=1.44n ) *SRC=B260;DI_B260;Diodes;Si; 60.0V 2.00A 1.00ns Diodes Inc. .MODEL DI_B260 D ( IS=6.08u RS=14.9m BV=60.0 IBV=500u + CJO=370p M=0.333 N=1.55 TT=1.44n ) *SRC=B260A;DI_B260A;Diodes;Si; 60.0V 2.00A 1.00ns Diodes Inc. .MODEL DI_B260A D ( IS=6.08u RS=14.9m BV=60.0 IBV=500u + CJO=370p M=0.333 N=1.55 TT=1.44n ) *SRC=B270;DI_B270;Diodes;Si; 70.0V 2.00A 10.0ns Diodes Inc Schottky .MODEL DI_B270 D ( IS=746u RS=21.0m BV=70.0 IBV=500u + CJO=179p M=0.333 N=2.87 TT=14.4n ) *SRC=B280;DI_B280;Diodes;Si; 80.0V 2.00A 10.0ns Diodes Inc Schottky .MODEL DI_B280 D ( IS=746u RS=21.0m BV=80.0 IBV=500u + CJO=179p M=0.333 N=2.87 TT=14.4n ) *SRC=B290;DI_B290;Diodes;Si; 90.0V 2.00A 10.0ns Diodes Inc Schottky .MODEL DI_B290 D ( IS=746u RS=21.0m BV=90.0 IBV=500u + CJO=179p M=0.333 N=2.87 TT=14.4n ) *SRC=B3100;DI_B3100;Diodes;Si; 100V 3.00A 10.0ns Diodes Inc. Schottky .MODEL DI_B3100 D ( IS=916u RS=14.1m BV=100 IBV=500u + CJO=159p M=0.333 N=3.04 TT=14.4n ) *SRC=B320;DI_B320;Diodes;Si; 30.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B320 D ( IS=9.90n RS=14.0m BV=30.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B320A;DI_B320A;Diodes;Si; 30.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B320A D ( IS=9.90n RS=14.0m BV=30.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B320B;DI_B320B;Diodes;Si; 30.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B320B D ( IS=9.90n RS=14.0m BV=30.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B330;DI_B330;Diodes;Si; 30.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B330 D ( IS=9.90n RS=14.0m BV=30.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B330A;DI_B330A;Diodes;Si; 30.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B330A D ( IS=9.90n RS=14.0m BV=30.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B330B;DI_B330B;Diodes;Si; 30.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B330B D ( IS=9.90n RS=14.0m BV=30.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B340;DI_B340;Diodes;Si; 40.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B340 D ( IS=9.90n RS=14.0m BV=40.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B340A;DI_B340A;Diodes;Si; 40.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B340A D ( IS=9.90n RS=14.0m BV=40.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B340B;DI_B340B;Diodes;Si; 40.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B340B D ( IS=9.90n RS=14.0m BV=40.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B340LA;DI_B340LA;Diodes;Si; 40.0V 3.00A 10.0ns Diodes Inc. Schottky .MODEL DI_B340LA D ( IS=1.15m RS=17.8m BV=40.0 IBV=2.00m + CJO=411p M=0.333 N=1.70 TT=14.4n ) *SRC=B340LB;DI_B340LB;Diodes;Si; 40.0V 3.00A 10.0ns Diodes Inc. Schottky .MODEL DI_B340LB D ( IS=1.15m RS=17.8m BV=40.0 IBV=2.00m + CJO=411p M=0.333 N=1.70 TT=14.4n ) *SRC=B350;DI_B350;Diodes;Si; 50.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B350 D ( IS=9.90n RS=14.0m BV=50.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B350A;DI_B350A;Diodes;Si; 50.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B350A D ( IS=9.90n RS=14.0m BV=50.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B350B;DI_B350B;Diodes;Si; 50.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B350B D ( IS=9.90n RS=14.0m BV=50.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B360;DI_B360;Diodes;Si; 60.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B360 D ( IS=9.90n RS=14.0m BV=60.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B360A;DI_B360A;Diodes;Si; 60.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B360A D ( IS=9.90n RS=14.0m BV=60.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B360B;DI_B360B;Diodes;Si; 60.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B360B D ( IS=9.90n RS=14.0m BV=60.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B370;DI_B370;Diodes;Si; 70.0V 3.00A 10.0ns Diodes Inc. Schottky .MODEL DI_B370 D ( IS=916u RS=14.1m BV=70.0 IBV=500u + CJO=159p M=0.333 N=3.04 TT=14.4n ) *SRC=B380;DI_B380;Diodes;Si; 80.0V 3.00A 10.0ns Diodes Inc. Schottky .MODEL DI_B380 D ( IS=916u RS=14.1m BV=80.0 IBV=500u + CJO=159p M=0.333 N=3.04 TT=14.4n ) *SRC=B390;DI_B390;Diodes;Si; 90.0V 3.00A 10.0ns Diodes Inc. Schottky .MODEL DI_B390 D ( IS=916u RS=14.1m BV=90.0 IBV=500u + CJO=159p M=0.333 N=3.04 TT=14.4n ) *SRC=B3L30LP;DI_B3L30LP;Diodes;Si; 30.0V 3.00A 15.0ns Diodes INC Schottky rectifier .MODEL DI_B3L30LP D ( IS=25.1u RS=12.5m BV=30.0 IBV=450u + CJO=517p M=0.333 N=1.03 TT=21.6n ) *SRC=B520C;DI_B520C;Diodes;Si; 20.0V 5.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B520C D ( IS=617u RS=10.0m BV=20.0 IBV=500u + CJO=497p M=0.333 N=1.70 TT=7.20n ) *SRC=B530C;DI_B530C;Diodes;Si; 30.0V 5.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B530C D ( IS=617u RS=10.0m BV=30.0 IBV=500u + CJO=497p M=0.333 N=1.70 TT=7.20n ) .LIB B540C * .MODEL B540C D ( +LEVEL = 1 IS = 1.5672e-06 RS = 0.0209949 +N = 1.01362 IBV = 0.0001 CJO = 8.98694e-10 +VJ = 0.396195 MJ = 0.457747 FC = 0.5 +XTI = 0.000352915 EG = 0.750278 TRS1 = 0.00406277 +TRS2 = 2.17553e-07 BV = 50 TT = 0 ) * .ENDL B540C *SRC=B550C;DI_B550C;Diodes;Si; 50.0V 5.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B550C D ( IS=66.7u RS=14.1m BV=50.0 IBV=500u + CJO=497p M=0.333 N=1.70 TT=7.20n ) *SRC=B560C;DI_B560C;Diodes;Si; 60.0V 5.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B560C D ( IS=66.7u RS=14.1m BV=60.0 IBV=500u + CJO=497p M=0.333 N=1.70 TT=7.20n ) *BAS70LP;Schottky rectifier *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=11NOV2011 *VERSION=1 .MODEL BAS70LP D ( IS=1.5n RS=14 ISR=3n BV=75 NBV=300 IBV=15n IKF=.4m + CJO=2.04p M=0.19 VJ=.4 N=.99 TT=1.6n EG=.8 XTI=.3 TBV1=.0001 TRS1=.0048) .SIMULATOR DEFAULT *SRC=BAT1000;DI_BAT1000;Diodes;Si; 40.0V 1.00A 5.00ns Diodes Inc. Schottky Barrier Rectifier .MODEL DI_BAT1000 D ( IS=874n RS=65.3m BV=40.0 IBV=100u + CJO=175p M=0.333 N=0.823 TT=7.20n ) *SRC=BAT400D;DI_BAT400D;Diodes;Si; 40.0V 0.500A 5.00ns Diodes Inc. Schottky .MODEL DI_BAT400D D ( IS=1.80u RS=0.103 BV=40.0 IBV=50.0u + CJO=119p M=0.333 N=1.26 TT=7.20n ) *SRC=BAT750;DI_BAT750;Diodes;Si; 40.0V 0.750A 5.00ns Diodes Inc. Schottky .MODEL DI_BAT750 D ( IS=23.1u RS=82.3m BV=40.0 IBV=100u + CJO=225p M=0.333 N=1.16 TT=7.20n ) .MODEL BAT750 D IS=7E-6 N=0.99 RS=130E-3 IKF=0.15 XTI=2 EG=0.58 + CJO=184.9p M=0.523 VJ=0.3905 Fc=0.5 BV=60 IBV=300E-6 + ISR=4E-6 NR=1.8 * *SRC=BAT760;DI_BAT760;Diodes;Si; 30.0V 1.00A 10.0ns Diodes Inc. Schottky .MODEL DI_BAT760 D ( IS=10.6u RS=49.9m BV=30.0 IBV=50.0u + CJO=49.3p M=0.333 N=1.35 TT=14.4n ) *SRC=DFLS1100;DI_DFLS1100;Diodes;Si; 100V 1.00A 11.0ns Diodes Inc. Schottky Rectifier .MODEL DI_DFLS1100 D ( IS=270n RS=28.3m BV=100 IBV=1.00u + CJO=70.9p M=0.333 N=1.50 TT=15.8n ) *SRC=DFLS1150;DI_DFLS1150;Diodes;Si; 150V 1.00A 14.0ns Diodes Inc. Schottky Rectifier .MODEL DI_DFLS1150 D ( IS=10.2u RS=27.0m BV=150 IBV=2.00u + CJO=55.2p M=0.333 N=2.32 TT=20.2n ) *SRC=DFLS1200;DI_DFLS1200;Diodes;Si; 200V 1.00A 30.0ns Diodes Inc. Schottky .MODEL DI_DFLS1200 D ( IS=64.7u RS=10.3m BV=200 IBV=2.00u + CJO=45.3p M=0.333 N=3.25 TT=43.2n ) *SRC=DFLS120L;DI_DFLS120L;Diodes;Si; 20.0V 1.00A 5.00ns DIODES INC SCHOTTKY RECTIFIER .MODEL DI_DFLS120L D ( IS=21.0u RS=46.3m BV=20.0 IBV=1.00m + CJO=252p M=0.333 N=0.936 TT=7.20n ) *SRC=DFLS130;DI_DFLS130;Diodes;Si; 30.0V 1.00A 5.00ns DIODES INC SCHOTTKY RECTIFIER .MODEL DI_DFLS130 D ( IS=35.5u RS=54.5m BV=30.0 IBV=1.00m + CJO=97.1p M=0.333 N=1.09 TT=7.20n ) *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *DATE=10AUG2011 *VERSION=2 * .MODEL DFLS130L D(IS=10U RS=58m N=0.88 BV=30 IBV=0.36m NBV=150 + EG=0.62 ISR=30u CJO=396.4p VJ=0.31 M=0.48 TBV1=-0.007 TRS1=0.0045) *$ *SRC=DFLS140;DI_DFLS140;Diodes;Si; 40.0V 1.10A 5.00ns Diodes Inc Schottky .MODEL DI_DFLS140 D ( IS=163n RS=0.103 BV=40.0 IBV=20.0u + CJO=99.4p M=0.333 N=1.00 TT=7.20n ) *SRC=DFLS140L;DI_DFLS140L;Diodes;Si; 40.0V 1.00A 5.00ns Diodes Inc. Low VF Schottky .MODEL DI_DFLS140L D ( IS=817n RS=32.2m BV=40.0 IBV=500u + CJO=293p M=0.333 N=1.01 TT=7.20n ) *SRC=DFLS160;DI_DFLS160;Diodes;Si; 60.0V 1.00A 10.0ns Diodes Inc. Schottky Rectifier .MODEL DI_DFLS160 D ( IS=736n RS=63.0m BV=60.0 IBV=100u + CJO=163p M=0.333 N=1.01 TT=14.4n ) *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *DATE=16/12/2014 *VERSION=1.1 * .SUBCKT DFLS2100 1 2 D1 1 2 Dsch D2 1 2 Dpn .MODEL Dsch D (IS=4n RS=.2 BV=110 IBV=50u CJO=88p M=.4 VJ=.55 N=1.05 IKF=60m TRS1=.006 TT=15n EG=.8) .model Dpn D(IS=1p IKF=100 BV=110 TT=50n EG=1.05 RS=.028 ISR=1n) .ENDS * (c) 2014 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *SRC=DFLS220L;DI_DFLS220L;Diodes;Si; 20.0V 2.00A 5.00ns Diodes Inc. Schottky .MODEL DI_DFLS220L D ( IS=20.3u RS=47.4m BV=20.0 IBV=1.00m + CJO=252p M=0.333 N=0.947 TT=7.20n ) *SRC=DFLS230;DI_DFLS230;Diodes;Si; 30.0V 2.00A 5.00ns Diodes Inc. Schottky .MODEL DI_DFLS230 D ( IS=100u RS=52.2m BV=30.0 IBV=1.00m + CJO=133p M=0.333 N=1.27 TT=7.20n ) *SRC=DFLS230L;DI_DFLS230L;Diodes;Si; 30.0V 2.00A 5.00ns Diodes Inc. Schottky .MODEL DI_DFLS230L D ( IS=125u RS=43.6m BV=30.0 IBV=1.00m + CJO=265p M=0.333 N=1.21 TT=7.20n ) *SRC=DFLS230LH;DI_DFLS230LH;Diodes;Si; 30.0V 1.00A 11.0ns Diodes Inc. Schottky .MODEL DI_DFLS230LH D ( IS=947n RS=32.4m BV=30.0 IBV=200u + CJO=206p M=0.333 N=0.957 TT=15.8n ) *SRC=DFLS240L;DI_DFLS240L;Diodes;Si; 40.0V 2.00A 5.00ns Diodes Inc. Schottky .MODEL DI_DFLS240L D ( IS=516n RS=31.4m BV=40.0 IBV=500u + CJO=292p M=0.333 N=0.911 TT=7.20n ) *SRC=MBR1030CT;DI_MBR1030CT;Diodes;Si; 30.0V 10.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_MBR1030CT D ( IS=4.25u RS=13.0m BV=30.0 IBV=100u + CJO=318p M=0.333 N=1.15 TT=14.4n ) *SRC=MBR1035;DI_MBR1035;Diodes;Si; 35.0V 10.0A 5.00ns Diodes Inc. Schottky Barrier Rectifier .MODEL DI_MBR1035 D ( IS=2.62m RS=4.20m BV=35.0 IBV=100u + CJO=796p M=0.333 N=2.12 TT=7.20n ) *SRC=MBR1040;DI_MBR1040;Diodes;Si; 40.0V 10.0A 5.00ns Diodes Inc. Schottky Barrier Rectifier .MODEL DI_MBR1040 D ( IS=2.62m RS=4.20m BV=40.0 IBV=100u + CJO=796p M=0.333 N=2.12 TT=7.20n ) *SRC=MBR1040CT;DI_MBR1040CT;Diodes;Si; 40.0V 10.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_MBR1040CT D ( IS=4.25u RS=13.0m BV=40.0 IBV=100u + CJO=318p M=0.333 N=1.15 TT=14.4n ) *SRC=MBR1045;DI_MBR1045;Diodes;Si; 45.0V 10.0A 5.00ns Diodes Inc. Schottky Barrier Rectifier .MODEL DI_MBR1045 D ( IS=2.62m RS=4.20m BV=45.0 IBV=100u + CJO=796p M=0.333 N=2.12 TT=7.20n ) *SRC=MBR1045CT;DI_MBR1045CT;Diodes;Si; 45.0V 10.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_MBR1045CT D ( IS=4.25u RS=13.0m BV=45.0 IBV=100u + CJO=318p M=0.333 N=1.15 TT=14.4n ) *SRC=MBR1050;DI_MBR1050;Diodes;Si; 50.0V 10.0A 5.00ns Diodes Inc. Schottky Barrier Rectifier .MODEL DI_MBR1050 D ( IS=153u RS=3.17m BV=50.0 IBV=100u + CJO=796p M=0.333 N=1.96 TT=7.20n ) *SRC=MBR1050CT;DI_MBR1050CT;Diodes;Si; 50.0V 10.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_MBR1050CT D ( IS=7.24u RS=14.5m BV=50.0 IBV=100u + CJO=318p M=0.333 N=1.29 TT=14.4n ) *SRC=MBR1060;DI_MBR1060;Diodes;Si; 60.0V 10.0A 5.00ns Diodes Inc. Schottky Barrier Rectifier .MODEL DI_MBR1060 D ( IS=153u RS=3.17m BV=60.0 IBV=100u + CJO=796p M=0.333 N=1.96 TT=7.20n ) *SRC=MBR1530CT;DI_MBR1530CT;Diodes;Si; 30.0V 15.0A 5.00ns Diodes Inc. Schottky - One element of device .MODEL DI_MBR1530CT D ( IS=344u RS=2.81m BV=30.0 IBV=25.0u + CJO=530p M=0.333 N=2.28 TT=7.20n ) *SRC=MBR1535CT;DI_MBR1535CT;Diodes;Si; 35.0V 15.0A 5.00ns Diodes Inc. Schottky - One element of device .MODEL DI_MBR1535CT D ( IS=344u RS=2.81m BV=35.0 IBV=25.0u + CJO=530p M=0.333 N=2.28 TT=7.20n ) *SRC=MBR1540CT;DI_MBR1540CT;Diodes;Si; 40.0V 15.0A 5.00ns Diodes Inc. Schottky - One element of device .MODEL DI_MBR1540CT D ( IS=344u RS=2.81m BV=40.0 IBV=25.0u + CJO=530p M=0.333 N=2.28 TT=7.20n ) *SRC=MBR1545CT;DI_MBR1545CT;Diodes;Si; 45.0V 15.0A 5.00ns Diodes Inc. Schottky - One element of device .MODEL DI_MBR1545CT D ( IS=344u RS=2.81m BV=45.0 IBV=25.0u + CJO=530p M=0.333 N=2.28 TT=7.20n ) *SRC=MBR1550CT;DI_MBR1550CT;Diodes;Si; 50.0V 15.0A 5.00ns Diodes Inc. Schottky - One element of device .MODEL DI_MBR1550CT D ( IS=11.3u RS=2.64m BV=50.0 IBV=25.0u + CJO=530p M=0.333 N=1.87 TT=7.20n ) *SRC=MBR1560CT;DI_MBR1560CT;Diodes;Si; 60.0V 15.0A 5.00ns Diodes Inc. Schottky - One element of device .MODEL DI_MBR1560CT D ( IS=11.3u RS=2.64m BV=60.0 IBV=25.0u + CJO=530p M=0.333 N=1.87 TT=7.20n ) *SRC=MBR2030CT;DI_MBR2030CT;Diodes;Si; 30.0V 20.0A 1.00ns Diodes Inc. Schottky - One element of device .MODEL DI_MBR2030CT D ( IS=99.0u RS=2.10m BV=30.0 IBV=60.0u + CJO=994p M=0.333 N=1.70 TT=1.44n ) *SRC=MBR2035CT;DI_MBR2035CT;Diodes;Si; 35.0V 20.0A 1.00ns Diodes Inc. Schottky - One element of device .MODEL DI_MBR2035CT D ( IS=98.9u RS=2.11m BV=35.0 IBV=60.0u + CJO=994p M=0.333 N=1.70 TT=1.44n ) *SRC=MBR2040CT;DI_MBR2040CT;Diodes;Si; 40.0V 20.0A 1.00ns Diodes Inc. Schottky - One element of device .MODEL DI_MBR2040CT D ( IS=98.9u RS=2.11m BV=40.0 IBV=60.0u + CJO=994p M=0.333 N=1.70 TT=1.44n ) *SRC=MBR2045CT;DI_MBR2045CT;Diodes;Si; 45.0V 20.0A 1.00ns Diodes Inc. Schottky - One element of device .MODEL DI_MBR2045CT D ( IS=98.9u RS=2.11m BV=45.0 IBV=60.0u + CJO=994p M=0.333 N=1.70 TT=1.44n ) *SRC=MBR2050CT;DI_MBR2050CT;Diodes;Si; 50.0V 20.0A 1.00ns Diodes Inc. Schottky - One element of device .MODEL DI_MBR2050CT D ( IS=16.0u RS=2.11m BV=50.0 IBV=60.0u + CJO=994p M=0.333 N=1.70 TT=1.44n ) *SRC=MBR2060CT;DI_MBR2060CT;Diodes;Si; 60.0V 20.0A 1.00ns Diodes Inc. Schottky - One element of device .MODEL DI_MBR2060CT D ( IS=16.0u RS=2.11m BV=60.0 IBV=60.0u + CJO=994p M=0.333 N=1.70 TT=1.44n ) *SRC=MBR2545CT;DI_MBR2545CT;Diodes;Si; 45.0V 30.0A 1.00ns Diodes Inc. Schottky - One element of device .MODEL DI_MBR2545CT D ( IS=533u RS=1.41m BV=45.0 IBV=50.0u + CJO=1.34n M=0.333 N=1.95 TT=1.44n ) *SRC=MBR2560CT;DI_MBR2560CT;Diodes;Si; 60.0V 30.0A 1.00ns Diodes Inc. Schottky - One element of device .MODEL DI_MBR2560CT D ( IS=1.16m RS=1.41m BV=60.0 IBV=50.0u + CJO=1.34k M=0.333 N=2.53 TT=1.44n ) *SRC=MBRB1530CT;DI_MBRB1530CT;Diodes;Si; 30.0V 15.0A 30.0ns Diodes Inc. Schottky -- one element of device .MODEL DI_MBRB1530CT D ( IS=71.5u RS=2.81m BV=30.0 IBV=100u + CJO=464p M=0.333 N=1.61 TT=43.2n ) *SRC=MBRB1540CT;DI_MBRB1540CT;Diodes;Si; 40.0V 15.0A 30.0ns Diodes Inc. Schottky -- one element of device .MODEL DI_MBRB1540CT D ( IS=71.5u RS=2.81m BV=40.0 IBV=100u + CJO=464p M=0.333 N=1.61 TT=43.2n ) *SRC=MBRB1540CT;DI_MBRB1540CT;Diodes;Si; 40.0V 15.0A 30.0ns Diodes Inc. Schottky -- one element of device .MODEL DI_MBRB1540CT D ( IS=71.5u RS=2.81m BV=40.0 IBV=100u + CJO=464p M=0.333 N=1.61 TT=43.2n ) *SRC=PD3S120L;DI_PD3S120L;Diodes;Si; 20.0V 1.00A 18.0ns Diodes INC Schottky rectifier .MODEL DI_PD3S120L D ( IS=4.60u RS=41.2m BV=20.0 IBV=70.0u + CJO=112p M=0.333 N=1.03 TT=25.9n ) *SRC=PS3S130H;DI_PD3S130H;Diodes;Si; 30.0V 1.00A 17.5ns Diodes INC Schottky rectifier .MODEL DI_PD3S130H D ( IS=425n RS=67.9m BV=30.0 IBV=100u + CJO=97.1p M=0.333 N=1.07 TT=25.2n ) *SRC=PS3S130L;DI_PD3S130L;Diodes;Si; 30.0V 1.00A 21.5ns Diodes INC Schottky rectifier .MODEL DI_PD3S130L D ( IS=6.92u RS=35.0m BV=30.0 IBV=1.50m + CJO=97.1p M=0.333 N=0.953 TT=31.0n ) *SRC=PS3S140;DI_PD3S140;Diodes;Si; 40.0V 1.00A 27.0ns Diodes INC Schottky rectifier .MODEL DI_PD3S140 D ( IS=91.2n RS=62.2m BV=40.0 IBV=50.0u + CJO=77.7p M=0.333 N=0.996 TT=38.9n ) *SRC=PS3S160;DI_PD3S160;Diodes;Si; 60.0V 1.00A 13.0ns Diodes INC Schottky rectifier .MODEL DI_PD3S160 D ( IS=82.7n RS=57.6m BV=60.0 IBV=100u + CJO=92.2p M=0.333 N=1.09 TT=18.7n ) * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=13/10/2009 *VERSION=1 * .MODEL PD3S230L D IS=1.07E-5 N=1 ISR=7E-6 NR=1 BV=33 + IBV=1E-4 NBV=5 IBVL=6E-6 NBVL=200 RS=0.035 CJO=220E-12 + VJ=0.33 M=0.40 EG=0.6 XTI=2 TRS1=6E-3 * *$ *SRC=PDS1040;DI_PDS1040;Diodes;Si; 40.0V 10.0A 10.0ns Diodes Inc. Schottky .MODEL DI_PDS1040 D ( IS=2.78u RS=2.78m BV=40.0 IBV=700u + CJO=1.72n M=0.333 N=1.05 TT=14.4n ) *SRC=PDS1040L;Di_PDS1040L;Diodes;Si; 40.0V 10.0A 35.0ns Diodes Inc. 10A Low VF Schottky Barrier Rectifier .MODEL Di_PDS1040L D ( IS=6.02u RS=4.20m BV=40.0 IBV=600u + CJO=2.21n M=0.333 N=1.04 TT=50.4n ) *SRC=PDS1045;Di_PDS1045;Diodes;Si; 45.0V 10.0A 31.1ns Diodes Inc. 10A Schottky Barrier Rectifier .MODEL Di_PDS1045 D ( IS=17.0u RS=4.20m BV=45.0 IBV=600u + CJO=2.25n M=0.333 N=1.11 TT=44.8n ) *SRC=PDS3100;DI_PDS3100;Diodes;Si; 100V 3.00A 10.0ns Diodes Inc. 3A HV Schottky Barrier Rectifier .MODEL DI_PDS3100 D ( IS=20.9u RS=13.9m BV=100 IBV=200u + CJO=305p M=0.333 N=1.70 TT=14.4n ) *DIODES_INC_SPICE_MODEL_PDS3200 *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=30/06/2014 *VERSION=1 .MODEL PDS3200 D (IS=10E-9 RS=0.026 ISR=.1u BV=202.0 IBV=1u + CJO=500p M=0.4 VJ=.55 N=1 IKF=.09 EG=.95 XTI=1.5 TT=30n) * (c) 2014 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *SRC=PDS340;DI_PDS340;Diodes;Si; 40.0V 3.00A 13.0ns Diodes Inc. Schottky .MODEL DI_PDS340 D ( IS=2.59u RS=13.5m BV=40.0 IBV=500u + CJO=630p M=0.333 N=1.11 TT=18.7n ) * *Zetex PDS360 Spice Model v1.0 Last Revised 20/02/09 * .MODEL PDS360 D IS=0.7E-7 N=1.02 ISR=0.94E-7 NR=1.1 BV=63 IBV=2E-4 + NBV=2 IBVL=8E-8 NBVL=300 RS=0.034 CJO=390E-12 VJ=1.1 M=0.53 + EG=0.74 XTI=2 TRS1=4e-3 * *$ * * (c) 2009 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA *SRC=PDS4150;DI_PDS4150;Diodes;Si; 150V 4.00A 15.0ns Diodes Inc. 4A HV Schottky Barrier Rectifier .MODEL DI_PDS4150 D ( IS=19.2u RS=5.66m BV=150 IBV=10.0u + CJO=630p M=0.333 N=1.89 TT=21.6n ) *SRC=PDS5100;DI_PDS5100;Diodes;Si; 100V 5.00A 15.0ns Diodes Inc. 5A Schottky Barrier Rectifier .MODEL DI_PDS5100 D ( IS=49.0u RS=7.63m BV=100 IBV=200u + CJO=375p M=0.333 N=1.84 TT=21.6n ) *PDS5100H Spice Model v2.0 Last Revised 05/12/2014 Diodes Inc SCHOTTKY BARRIER RECTIFIER *SIMULATOR=SPICE3 .MODEL PDS5100H D ( IS=9.000n RS=18.00m BV=105.0 IBV=36.54u + CJO=836.0p M=450.0m N=970.0m TT=18.50n EG=800.0m VJ=450.0m XTI=1.500 ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *DIODES_INC_SPICE_MODEL_PDS560 *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=4/08/2014 *VERSION=1 .MODEL PDS560 D (IS=18E-8 RS=0.018 ISR=20E-8 BV=60.0 IBV=1u + CJO=500p M=0.4 VJ=.4 N=.97 IKF=.35 EG=.69 XTI=1.5 NR=1.2 TT=20n) * (c) 2014 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *SRC=SB1100;DI_SB1100;Diodes;Si; 100.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SB1100 D ( IS=6.63u RS=62.3m BV=100.0 IBV=500u + CJO=199p M=0.333 N=1.70 TT=7.20n ) *SRC=SB140;DI_SB140;Diodes;Si; 40.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SB140 D ( IS=31.5u RS=49.2m BV=40.0 IBV=500u + CJO=239p M=0.333 N=1.70 TT=7.20n ) *SRC=SB150;DI_SB150;Diodes;Si; 50.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SB150 D ( IS=1.17u RS=42.0m BV=50.0 IBV=500u + CJO=172p M=0.333 N=1.28 TT=7.20n ) *SRC=SB160;DI_SB160;Diodes;Si; 60.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SB160 D ( IS=1.17u RS=42.0m BV=60.0 IBV=500u + CJO=172p M=0.333 N=1.28 TT=7.20n ) *SRC=SB170;DI_SB170;Diodes;Si; 70.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SB170 D ( IS=6.63u RS=62.3m BV=70.0 IBV=500u + CJO=199p M=0.333 N=1.70 TT=7.20n ) *SRC=SB180;DI_SB180;Diodes;Si; 80.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SB180 D ( IS=6.63u RS=62.3m BV=80.0 IBV=500u + CJO=199p M=0.333 N=1.70 TT=7.20n ) *SRC=SB190;DI_SB190;Diodes;Si; 90.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SB190 D ( IS=6.63u RS=62.3m BV=90.0 IBV=500u + CJO=199p M=0.333 N=1.70 TT=7.20n ) *SRC=SB340;DI_SB340;Diodes;Si; 40.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SB340 D ( IS=85.9n RS=18.5m BV=40.0 IBV=70.0u + CJO=411p M=0.333 N=0.754 TT=7.20n ) *SRC=SBG3030CT;DI_SBG3030CT;Diodes;Si; 30.0V 30.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBG3030CT D ( IS=31.1u RS=3.70m BV=30.0 IBV=1.00m + CJO=796p M=0.333 N=1.17 TT=7.20n ) =============================================================================================== *SRC=SBG3040CT;DI_SBG3040CT;Diodes;Si; 40.0V 30.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBG3040CT D ( IS=31.1u RS=3.70m BV=40.0 IBV=1.00m + CJO=796p M=0.333 N=1.17 TT=7.20n ) =============================================================================================== *SRC=SBG3045CT;DI_SBG3045CT;Diodes;Si; 45.0V 30.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBG3045CT D ( IS=31.1u RS=3.70m BV=45.0 IBV=1.00m + CJO=796p M=0.333 N=1.17 TT=7.20n ) =============================================================================================== *SRC=SBL1630PT;DI_SBL1630PT;Diodes;Si; 30.0V 16.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL1630PT D ( IS=575u RS=3.47m BV=30.0 IBV=500u + CJO=1.86n M=0.333 N=1.68 TT=7.20n ) *SRC=SBL1635PT;DI_SBL1635PT;Diodes;Si; 35.0V 16.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL1635PT D ( IS=575u RS=3.47m BV=35.0 IBV=500u + CJO=1.86n M=0.333 N=1.68 TT=7.20n ) *SRC=SBL1640PT;DI_SBL1640PT;Diodes;Si; 40.0V 16.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL1640PT D ( IS=575u RS=3.47m BV=40.0 IBV=500u + CJO=1.86n M=0.333 N=1.68 TT=7.20n ) *SRC=SBL1645PT;DI_SBL1645PT;Diodes;Si; 45.0V 16.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL1645PT D ( IS=575u RS=3.47m BV=45.0 IBV=500u + CJO=1.86n M=0.333 N=1.68 TT=7.20n ) *SRC=SBL1650PT;DI_SBL1650PT;Diodes;Si; 50.0V 16.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL1650PT D ( IS=89.9u RS=3.60m BV=50.0 IBV=500u + CJO=1.86n M=0.333 N=1.67 TT=7.20n ) *SRC=SBL1660PT;DI_SBL1660PT;Diodes;Si; 60.0V 16.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL1660PT D ( IS=89.9u RS=3.60m BV=60.0 IBV=500u + CJO=1.86n M=0.333 N=1.67 TT=7.20n ) *SRC=SBL2040CT;DI_SBL2040CT;Diodes;Si; 40.0V 20.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL2040CT D ( IS=4.83m RS=2.37m BV=40.0 IBV=1.00m + CJO=1.34n M=0.333 N=2.28 TT=14.4n ) *SRC=SBL2045CT;DI_SBL2045CT;Diodes;Si; 45.0V 20.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL2045CT D ( IS=4.83m RS=2.37m BV=45.0 IBV=1.00m + CJO=1.34n M=0.333 N=2.28 TT=14.4n ) *SRC=SBL2050CT;DI_SBL2050CT;Diodes;Si; 50.0V 20.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL2050CT D ( IS=3.50m RS=2.11m BV=50.0 IBV=1.00m + CJO=1.34n M=0.333 N=2.95 TT=14.4n ) *SRC=SBL30L30CT;DI_SBL30L30CT;Diodes;Si; 30.0V 30.0A 50.0ns Diodes INC Schottky Rectifier .MODEL DI_SBL30L30CT D ( IS=60.6u RS=2.64m BV=30.0 IBV=1.50m + CJO=3.05u M=0.333 N=1.22 TT=72.0n *SRC=SBL530;DI_SBL530;Diodes;Si; 30.0V 5.00A 10.0ns Diodes Inc. Schottky .MODEL DI_SBL530 D ( IS=926u RS=9.47m BV=30.0 IBV=500u + CJO=968p M=0.333 N=1.69 TT=14.4n ) *SRC=SBL535;DI_SBL535;Diodes;Si; 35.0V 5.00A 10.0ns Diodes Inc. Schottky .MODEL DI_SBL535 D ( IS=926u RS=9.47m BV=35.0 IBV=500u + CJO=968p M=0.333 N=1.69 TT=14.4n ) *SRC=SBL540;DI_SBL540;Diodes;Si; 40.0V 5.00A 10.0ns Diodes Inc. Schottky .MODEL DI_SBL540 D ( IS=926u RS=9.47m BV=40.0 IBV=500u + CJO=968p M=0.333 N=1.69 TT=14.4n ) *SRC=SBL545;DI_SBL545;Diodes;Si; 45.0V 5.00A 10.0ns Diodes Inc. Schottky .MODEL DI_SBL545 D ( IS=926u RS=9.47m BV=45.0 IBV=500u + CJO=968p M=0.333 N=1.69 TT=14.4n ) *SRC=SBL550;DI_SBL550;Diodes;Si; 50.0V 5.00A 10.0ns Diodes Inc. Schottky .MODEL DI_SBL550 D ( IS=14.0u RS=8.33m BV=50.0 IBV=500u + CJO=968p M=0.333 N=1.70 TT=14.4n ) *SRC=SBL560;DI_SBL560;Diodes;Si; 60.0V 5.00A 10.0ns Diodes Inc. Schottky .MODEL DI_SBL560 D ( IS=14.0u RS=8.33m BV=60.0 IBV=500u + CJO=968p M=0.333 N=1.70 TT=14.4n ) *SRC=SBL6030PT;DI_SBL6030PT;Diodes;Si; 30.0V 60.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL6030PT D ( IS=1.93m RS=917u BV=30.0 IBV=20.0m + CJO=3.25n M=0.333 N=1.68 TT=14.4n ) *SRC=SBL6040PT;DI_SBL6040PT;Diodes;Si; 40.0V 60.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL6040PT D ( IS=1.93m RS=917u BV=40.0 IBV=20.0m + CJO=3.25n M=0.333 N=1.68 TT=14.4n ) *SRC=SBL6050PT;DI_SBL6050PT;Diodes;Si; 50.0V 60.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL6050PT D ( IS=353u RS=909u BV=50.0 IBV=20.0m + CJO=3.25n M=0.333 N=1.76 TT=14.4n ) *SRC=SBL6060PT;DI_SBL6060PT;Diodes;Si; 60.0V 60.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL6060PT D ( IS=353u RS=909u BV=60.0 IBV=20.0m + CJO=3.25n M=0.333 N=1.76 TT=14.4n ) *SRC=SD830;DI_SD830;Diodes;Si; 30.0V 8.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SD830 D ( IS=248u RS=5.25m BV=30.0 IBV=1.00m + CJO=1.06n M=0.333 N=1.70 TT=7.20n ) *SRC=SD840;DI_SD840;Diodes;Si; 40.0V 8.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SD840 D ( IS=248u RS=5.25m BV=40.0 IBV=1.00m + CJO=1.06n M=0.333 N=1.70 TT=7.20n ) *SRC=SD845;DI_SD845;Diodes;Si; 45.0V 8.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SD845 D ( IS=248u RS=5.25m BV=45.0 IBV=1.00m + CJO=1.06n M=0.333 N=1.70 TT=7.20n ) *SRC=SD860;DI_SD860;Diodes;Si; 60.0V 8.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SD860 D ( IS=248u RS=5.25m BV=60.0 IBV=1.00m + CJO=1.06n M=0.333 N=1.70 TT=7.20n ) *SRC=SDM100K30L;DI_SDM100K30L;Diodes;Si; 30.0V 1.00A 10.0ns Diodes Inc. Schottky Barrier Rectifier .MODEL DI_SDM100K30L D ( IS=255n RS=0.108 BV=30.0 IBV=100u + CJO=53.4p M=0.333 N=0.927 TT=14.4n ) *SDM1L30BLP Spice Model v1.0 Last Revised 04/10/2014 Diodes Inc Surface Mount Schottky Bridge .MODEL DI_SDM1L30BLP D ( IS=26.03u RS=46.51m BV=33 IBV=10 + CJO=516.8p M=443.9m N=1.030 TT=10.00n EG=480.0m VJ=396.1m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *ZETEX ZHCS1000 Spice Model v1.0 Last Revised 22/05/02 * .MODEL ZHCS1000 D IS=1.6e-7 N=.59 RS=137e-3 IKF=2.5e-3 XTI=2 +EG=.58 CJO=184.9p M=.5231 VJ=.3905 Fc=.5 BV=60 IBV=100E-6 +ISR=4E-6 NR=1.8 * *$ * *ZETEX ZHCS2000 Spice Model v1.0 Last Revised 22/10/03 * .MODEL ZHCS2000 D IS=5e-7 N=.59 RS=88e-3 IKF=5e-3 XTI=2 +EG=.58 CJO=370p M=.5231 VJ=.3905 Fc=.5 BV=60 IBV=300E-6 +ISR=10E-6 NR=1.8 * *$ * *ZETEX ZHCS500 Spice Model v1.0 Last Revised 22/05/02 * .MODEL ZHCS500 D IS=9.1e-8 N=.59 RS=250e-3 IKF=1.37e-3 XTI=2 +EG=.58 CJO=101p M=.5231 VJ=.3905 Fc=.5 BV=60 IBV=100E-6 +ISR=2.2E-6 NR=1.8 * *$ * *ZETEX ZHCS750 Spice Model v1.0 Last Revised 23/9/97 * .MODEL ZHCS750 D IS=7E-6 N=.99 RS=130E-3 IKF=.15 XTI=2 EG=.58 + CJO=184.9p M=.523 VJ=.3905 Fc=.5 BV=60 IBV=300E-6 + ISR=4E-6 NR=1.8 * *$ * *ZETEX ZLLS1000 Spice Model v2.0 Last revision 24/05/2007 * *This simple model has limitations with respect to temperature *for best fit of forward characteristitics with temperature EG=0.63 *for best fit of reverse characteristitics with temperature EG=0.85 * .MODEL ZLLS1000 D IS=1.35E-6 N=1.03 ISR=3.3E-6 NR=2 IKF=0.65 BV=56 IBV=5E-4 +RS=0.14 TT=4E-9 CJO=115E-12 VJ=0.6 M=0.36 EG=0.63 XTI=2 TRS1=4E-3 * *$ * *ZETEX ZLLS410 Spice Model v1.0 Last Revised 25/05/07 * *This simple model has limitations with respect to temperature *best fit of forward characteristitics with temperature EG=0.63 *best fit of reverse characteristitics with temperature EG=0.75 * .MODEL ZLLS410 D IS=1.3e-6 N=1.03 ISR=4E-7 NR=2 IKF=0.15 BV=36 IBV=200E-6 +NBV=1 RS=0.1 TT=2e-9 CJO=81e-12 VJ=0.6 M=0.39 EG=0.63 XTI=2 TRS1=4E-3 * *$ * *SRC=MBRB1535CT;DI_MBRB1535CT;Diodes;Si; 35.0V 15.0A 30.0ns Diodes Inc. Schottky -- one element of device .MODEL DI_MBRB1535CT D ( IS=71.5u RS=2.81m BV=35.0 IBV=100u + CJO=464p M=0.333 N=1.61 TT=43.2n ) *SRC=1N5818;DI_1N5818;Diodes;Si; 30.0V 1.00A 3.00us Diodes Inc. Schottky Barrier Rectifier .MODEL DI_1N5818 D ( IS=263u RS=73.1m BV=30.0 IBV=1.00m + CJO=203p M=0.333 N=1.90 TT=4.32u ) *SRC=1N5819;DI_1N5819;Diodes;Si; 40.0V 1.00A 3.00us Diodes Inc. Schottky Barrier Rectifier .MODEL DI_1N5819 D ( IS=390n RS=0.115 BV=40.0 IBV=1.00m + CJO=203p M=0.333 N=1.70 TT=4.32u ) *SRC=1N5819HW;DI_1N5819HW;Diodes;Si; 40.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_1N5819HW D ( IS=191u RS=42.0m BV=40.0 IBV=1.00m + CJO=239p M=0.333 N=1.70 TT=7.20n ) *SRC=B130L;DI_B130L;Diodes;Si; 30.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B130L D ( IS=188u RS=18.5m BV=30.0 IBV=1.00m + CJO=331p M=0.333 N=1.65 TT=7.20n ) *SRC=B130LAW;DI_B130LAW;Diodes;Si; 30.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B130LAW D ( IS=407u RS=75.5m BV=30.0 IBV=1.00m + CJO=119p M=0.333 N=1.70 TT=7.20n ) *SRC=B130LB;DI_B130LB;Diodes;Si; 30.0V 1.00A 10.0ns Diodes Inc. Schottky .MODEL DI_B130LB D ( IS=458u RS=28.0m BV=30.0 IBV=1.00m + CJO=159p M=0.333 N=1.70 TT=14.4n ) * *Zetex PDS760 Spice Model v1.0 Last Revised 24/02/09 * .MODEL PDS760 D IS=2.1E-7 N=1.02 ISR=2.6E-7 NR=1.1 BV=63 IBV=2E-4 + NBV=2 IBVL=5.5E-7 NBVL=350 RS=0.016 CJO=1060E-12 VJ=1.1 M=0.53 + EG=0.74 XTI=2 TRS1=4e-3 * *$ * * (c) 2009 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA *SRC=PDS1040CTL;Di_PDS1040CTL;Diodes;Si; 40.0V 10.0A 20.0ns Diodes Inc. 10A Dual Low VF Schottky Barrier Rectifier Per Node .MODEL Di_PDS1040CTL D ( IS=21.5u RS=4.20m BV=40.0 IBV=200u + CJO=789p M=0.333 N=1.28 TT=28.8n ) *SRC=PDS540;DI_PDS540;Diodes;Si; 40.0V 5.00A 15.0ns Diodes Inc. 5A Schottky Barrier Rectifier .MODEL DI_PDS540 D ( IS=9.59u RS=10.7m BV=40.0 IBV=300u + CJO=727p M=0.333 N=1.26 TT=21.6n ) *SRC=PDS835L;DI_PDS835L;Diodes;Si; 35.0V 8.00A 15.0ns Diodes Inc. 8A Low VF Schottky Barrier Rectifier .MODEL DI_PDS835L D ( IS=42.9u RS=6.30m BV=35.0 IBV=1.40m + CJO=623p M=0.333 N=1.43 TT=21.6n ) *SRC=B1100B;DI_B1100B;Diodes;Si; 100V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B1100B D ( IS=89.3u RS=42.2m BV=100 IBV=500n + CJO=66.3p M=0.333 N=2.45 TT=7.20n ) *SRC=B120;DI_B120;Diodes;Si; 20.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B120 D ( IS=39.6u RS=50.2m BV=20.0 IBV=500u + CJO=265p M=0.333 N=1.70 TT=7.20n ) *SRC=B120B;DI_B120B;Diodes;Si; 20.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B120B D ( IS=39.6u RS=50.2m BV=20.0 IBV=500u + CJO=265p M=0.333 N=1.70 TT=7.20n ) *SRC=B130;DI_B130;Diodes;Si; 30.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B130 D ( IS=39.6u RS=50.2m BV=30.0 IBV=500u + CJO=265p M=0.333 N=1.70 TT=7.20n ) *SRC=B130B;DI_B130B;Diodes;Si; 30.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B130B D ( IS=39.6u RS=50.2m BV=30.0 IBV=500u + CJO=265p M=0.333 N=1.70 TT=7.20n ) *SRC=B140B;DI_B140B;Diodes;Si; 40.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B140B D ( IS=39.6u RS=50.2m BV=40.0 IBV=500u + CJO=265p M=0.333 N=1.70 TT=7.20n ) *SRC=B140HB;DI_B140HB;Diodes;Si; 40.0V 1.00A 10.0ns Diodes Inc. Schottky .MODEL DI_B140HB D ( IS=31.0u RS=42.1m BV=40.0 IBV=1.00m + CJO=159p M=0.333 N=1.70 TT=14.4n ) *SRC=B140HW;DI_B140HW;Diodes;Si; 40.0V 1.00A 11.0ns Diodes Incorporated Schottky diode .MODEL DI_B140HW D ( IS=123n RS=66.4m BV=40.0 IBV=40.0u + CJO=119p M=0.333 N=1.07 TT=15.8n ) *SRC=B150;DI_B150;Diodes;Si; 50.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B150 D ( IS=15.7u RS=42.0m BV=50.0 IBV=500u + CJO=133p M=0.333 N=1.70 TT=7.20n ) *SRC=B150B;DI_B150B;Diodes;Si; 50.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B150B D ( IS=15.7u RS=42.0m BV=50.0 IBV=500u + CJO=133p M=0.333 N=1.70 TT=7.20n ) *SRC=B0520LW;DI_B0520LW;Diodes;Si; 20.0V 0.500A 5.00ns Diodes Inc. Schottky .MODEL DI_B0520LW D ( IS=195u RS=49.4m BV=20.0 IBV=250u + CJO=199p M=0.333 N=1.72 TT=7.20n ) *SRC=B0520WS;DI_B0520WS;Schottky rectifier *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=7OCT2011 *VERSION=1 .MODEL B0520WS D ( IS=1.5u RS=0.16 ISR=3u BV=22.0 IBV=.5m + CJO=107p M=0.45 VJ=.38 N=0.907 TT=5.6n EG=.69 XTI=.3 TBV1=.0001 TRS1=.0048) .SIMULATOR DEFAULT *SRC=B0530W;DI_B0530W;Diodes;Si; 30.0V 0.500A 5.00ns Diodes Inc. Schottky .MODEL DI_B0530W D ( IS=47.4u RS=26.8m BV=30.0 IBV=130u + CJO=225p M=0.333 N=1.66 TT=7.20n ) *SRC=B0530WS;DI_B0530WS;Diodes;Si; 30.0V 0.500A 10.0ns Diodes Inc. Schottky .MODEL DI_B0530WS D ( IS=897u RS=72.9m BV=30.0 IBV=500u + CJO=79.6p M=0.333 N=2.85 TT=14.4n ) *SRC=B0540W;DI_B0540W;Diodes;Si; 40.0V 0.500A 10.0ns Diodes Inc. Schottky .MODEL DI_B0540W D ( IS=55.9p RS=0.125 BV=40.0 IBV=20.0u + CJO=225p M=0.333 N=0.700 TT=14.4n ) *B0540WS Spice Model v1.0 Last Revised 5/23/2018 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_B0540WS D ( IS=520.0n RS=130.0m BV=50.00 IBV=10.00 + CJO=150.0p M=400.0m N=1.100 TT=11.65n EG=480.0m VJ=44.67m ) * (c) 2018 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SRC=B1100;DI_B1100;Diodes;Si; 100V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B1100 D ( IS=89.3u RS=42.2m BV=100 IBV=500n + CJO=66.3p M=0.333 N=2.45 TT=7.20n ) *SRC=B1100LB;DI_B1100LB;Diodes;Si; 100V 1.00A 10.0ns Diodes Inc. Schottky .MODEL DI_B1100LB D ( IS=20.0n RS=24.7m BV=100 IBV=500n + CJO=225p M=0.333 N=1.22 TT=14.4n ) *SRC=B140;DI_B140;Diodes;Si; 40.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B140 D ( IS=39.6u RS=50.2m BV=40.0 IBV=500u + CJO=265p M=0.333 N=1.70 TT=7.20n ) *SRC=B160;DI_B160;Diodes;Si; 60.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B160 D ( IS=15.7u RS=42.0m BV=60.0 IBV=500u + CJO=133p M=0.333 N=1.70 TT=7.20n ) *SRC=SB120;DI_SB120;Diodes;Si; 20.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SB120 D ( IS=31.5u RS=49.2m BV=20.0 IBV=500u + CJO=239p M=0.333 N=1.70 TT=7.20n ) *SRC=SB130;DI_SB130;Diodes;Si; 30.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SB130 D ( IS=31.5u RS=49.2m BV=30.0 IBV=500u + CJO=239p M=0.333 N=1.70 TT=7.20n ) SDM2U30CSP Spice Model v1.0 Last Revised 8/11/2015 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SDM02U30LP3 D ( IS=10.49u RS=43.16m BV=100.00 IBV=200.00u + CJO=375.0p M=333.0m N=1.146 TT=21.6n EG=480.0m VJ=600.0m ) * (c) 2015 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SRC=1N5817;DI_1N5817;Diodes;Si; 20.0V 1.00A 3.00us Diodes Inc. Schottky Barrier Rectifier .MODEL DI_1N5817 D ( IS=870u RS=81.3m BV=20.0 IBV=1.00m + CJO=203p M=0.333 N=1.81 TT=4.32u ) *SRC=SD103AWS;DI_SD103AWS;Diodes;Si; 40.0V 0.350A 10.0ns Diodes Inc. Schottky .MODEL DI_SD103AWS D ( IS=8.65u RS=0.120 BV=40.0 IBV=5.00u + CJO=53.0p M=0.333 N=1.70 TT=14.4n ) *SBRT20U50SLP Spice Model v1.0 Last Revised 04/16/2014 Diodes Inc Trench SUPER BARRIER RECTIFIER .MODEL DI_SBRT20U50SLP D ( IS=60.50u RS=6.029m BV=55.00 IBV=10.00 + CJO=13.00n M=473.3m N=1.017 TT=10.00n EG=480.0m VJ=20.19m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SBRT10U50SP5 Spice Model v1.0 Last Revised 11/06/2014 Diodes Inc TRENCH SUPER BARRIER RECTIFIER *SIMULATOR=SPICE3 .MODEL DI_SBRT10U50SP5 D ( IS=47.29u RS=7.545m BV=55.00 IBV=10.00 + CJO=5.815n M=426.5m N=1.010 TT=38.20n EG=480.0m VJ=35.52m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SBRT10M50SP5 Spice Model v1.0 Last Revised 11/06/2014 Diodes Inc TRENCH SUPER BARRIER RECTIFIER *SIMULATOR=SPICE3 .MODEL DI_SBRT10M50SP5 D ( IS=29.37u RS=7.908m BV=55.00 IBV=10.00 + CJO=5.720n M=433.9m N=1.018 TT=36.10n EG=480.0m VJ=40.85m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SBRT5A50SAF Spice Model v1.0 Last Revised 04/11/2014 Diodes Inc Trench SUPER BARRIER RECTIFIER .MODEL DI_SBRT5A50SAF D ( IS=16.70u RS=25.96m BV=61 IBV=10 + CJO=1.986n M=388.7m N=1.052 TT=10.00n EG=480.0m VJ=11.34m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SBRT3U40P1 Spice Model v1.0 Last Revised 05/28/2014 Diodes Inc TRENCH SUPER BARRIER RECTIFIER *SIMULATOR=SPICE3 .MODEL DI_SBRT3U40P1 D ( IS=11.26u RS=31.17m BV=45.00 IBV=10.00 + CJO=2.602n M=426.4m N=1.031 TT=12.40n EG=480.0m VJ=6.740m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SBRT60U100CT Spice Model v1.0 Last Revised 04/15/2014 Diodes Inc Trench SUPER BARRIER RECTIFIER *SIMULATOR=SPICE3 .MODEL DI_SBRT60U100CT D ( IS=25.99u RS=12.84m BV=110.0 IBV=10.00 + CJO=17.15n M=505.1m N=1.027 TT=44.60n EG=480.0m VJ=10.13m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SBRT40V100CT Spice Model v1.0 Last Revised 05/14/2014 Diodes Inc TRENCH SUPER BARRIER RECTIFIER *SIMULATOR=SPICE3 .MODEL DI_SBRT40V100CT D ( IS=27.99u RS=16.00m BV=110.0 IBV=10.00 + CJO=11.96n M=452.9m N=1.016 TT=30.30n EG=480.0m VJ=3.448m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SBRT20M60SP5 Spice Model v1.0 Last Revised 05/23/2014 Diodes Inc TRENCH SUPER BARRIER RECTIFIER *SIMULATOR=SPICE3 .MODEL DI_SBRT20M60SP5 D ( IS=17.25u RS=7.887m BV=66.00 IBV=10.00 + CJO=14.41n M=526.0m N=1.019 TT=44.20n EG=480.0m VJ=21.52m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SBRT20U60SP5 Spice Model v1.0 Last Revised 05/22/2014 Diodes Inc TRENCH SUPER BARRIER RECTIFIER *SIMULATOR=SPICE3 .MODEL DI_SBRT20U60SP5 D ( IS=53.48u RS=7.620m BV=66.00 IBV=10.00 + CJO=14.07n M=529.3m N=1.019 TT=43.20n EG=480.0m VJ=23.66m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SBRT15U100SP5 Spice Model v1.0 Last Revised 05/22/2014 Diodes Inc TRENCH SUPER BARRIER RECTIFIER *SIMULATOR=SPICE3 .MODEL DI_SBRT15U100SP5 D ( IS=14.76u RS=19.00m BV=110.00 IBV=10.00 + CJO=10.76n M=519.9m N=1.023 TT=29.10n EG=480.0m VJ=14.89m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SBRT25M50SLP Spice Model v1.0 Last Revised 05/20/2014 Diodes Inc TRENCH SUPER BARRIER RECTIFIER *SIMULATOR=SPICE3 .MODEL DI_SBRT25M50SLP D ( IS=21.40u RS=5.797m BV=55.00 IBV=10.00 + CJO=21.87n M=530.5m N=1.014 TT=59.50n EG=480.0m VJ=19.30m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SBRT3U45SA Spice Model v1.0 Last Revised 04/22/2014 Diodes Inc TRENCH SUPER BARRIER RECTIFIER *SIMULATOR=SPICE3 .MODEL DI_SBRT3U45SA D ( IS=16.77u RS=32.93m BV=50.50 IBV=10.00 + CJO=1.717n M=325.5m N=1.065 TT=10.00n EG=480.0m VJ=1.538m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SBRT3M40SA Spice Model v1.0 Last Revised 04/21/2014 Diodes Inc TRENCH SUPER BARRIER RECTIFIER *SIMULATOR=SPICE3 .MODEL DI_SBRT3M40SA D ( IS=8.986u RS=29.32m BV=45.00 IBV=10.00 + CJO=1.880n M=259.7m N=1.047 TT=10.00n EG=480.0m VJ=140.3u ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *TITLE=SBRT30u45CT *DATE=28/1/2016 *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *VERSION=1 .MODEL SBRT30U45CT D(IS=100u RS=.005 BV=48 IBV=110u CJO=4000p M=.6 VJ=.4 N=1.05 ISR=20n IKF=15 TRS1=4m XTI1=3 TT=85n EG=.51 NBV=200) * (c) 2016 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *SBRT5A50SA Spice Model v1.0 Last Revised 04/23/2014 Diodes Inc TRENCH SUPER BARRIER RECTIFIER *SIMULATOR=SPICE3 .MODEL DI_SBRT5A50SA D ( IS=11.30u RS=22.68m BV=56.00 IBV=10.00 + CJO=1.998n M=448.8m N=1.040 TT=10.00n EG=480.0m VJ=33.67m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SRC=SBR05U20LP;DI_SBR05U20LP;Diodes;Si; 20.0V 0.500A 40.0ns Diodes INC Schottky rectifier .MODEL DI_SBR05U20LP D ( IS=2.83u RS=0.188 BV=20.0 IBV=20.0u + CJO=53.0p M=0.333 N=1.18 TT=57.6n ) *SRC=SBR10U40CT;DI_SBR10U40CT;Diodes;Si; 40.0V 5.00A 35.0ns Diodes INC SBR rectifier .MODEL DI_SBR10U40CT D ( IS=6.83m RS=6.69u BV=40.0 IBV=0.100 + CJO=593p M=0.333 N=7.19 TT=50.4n ) *DIODES_INC_SPICE_MODEL SBR10U45SP5 *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=3/10/2012 *VERSION=1 .MODEL SBR10U45SP5 D( IS=28E-6 RS=10m BV=46.0 IBV=300u N=.97 TT=10n EG=.48 TRS1=4m CJO=12590p M=.8 VJ=.4) * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * *SRC=SBR130S3;SBR130S3;Diodes;Si; 30.0V 1.00A 39.0ns Diodes .MODEL SBR130S3 D ( IS=7.30u RS=80.3m BV=30.0 IBV=12.2u + CJO=416p M=0.333 N=1.09 TT=56.2n *SBR1U150SA Spice Model v1.0 Last Revised 05/07/2014 Diodes Inc SURFACE MOUNT SUPER BARRIER RECTIFIER .MODEL DI_SBR1U150SA D ( IS=1.020m RS=1.983u BV=165.00 IBV=10.00 + CJO=1.164n M=461.9m N=3.651 TT=10.00n EG=480.0m VJ=12.68m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *TITLE: SBR1U40LP *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=27Apr2012 *VERSION=1 *PIN 1=Anode 2=Cathode .SUBCKT SBR1U40LP 1 2 M1 3 4 5 5 NMOD D1 5 3 DMOD R1 1 4 1u C1 3 5 1p R2 1 5 1u R3 3 2 1u .MODEL NMOD NMOS(LEVEL=3 VTO=.24 TOX=90E-10 NSUB=6E+15 KP=40 NFS=.2E+12 RS=0.3) .MODEL DMOD D(IS=5.7E-7 TT=3u N=1.74) .ENDS .SIMULATOR DEFAULT * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *SRC=SBR20A200CTB;DI_SBR20A200CTB;Diodes;Si; 200V 20.0A 20.0ns Diodes INC Schottky rectifier .MODEL DI_SBR20A200CTB D ( IS=4.16m RS=1.34m BV=200 IBV=3.28u + CJO=514p M=0.333 N=3.98 TT=28.8n *SRC=SBR20U150CT;DI_SBR20U150CT;Diodes;Si; 150V 20.0A 30.0ns Diodes Inc. SBR/ SKY .MODEL DI_SBR20U150CT D ( IS=3.25m RS=2.57m BV=150 IBV=500u + CJO=11.3n M=0.333 N=3.28 TT=43.2n ) *SRC=SBR20U150CTFP;DI_SBR20U150CTFP;Diodes;Si; 150V 20.0A 30.0ns Diodes Inc. SBR/ SKY .MODEL DI_SBR20U150CTFP D ( IS=3.25m RS=2.57m BV=150 IBV=500u + CJO=11.3n M=0.333 N=3.28 TT=43.2n ) *SRC=SBR2A30P1;DI_SBR2A30P1;Diodes;Si; 30.0V 2.00A 12.0ns Diodes INC Schottky rectifier .MODEL DI_SBR2A30P1 D ( IS=78.9u RS=29.8m BV=30.0 IBV=60.0u + CJO=806p M=0.333 N=1.25 TT=17.3n) *SRC=SBR2A40P1;DI_SBR2A40P1;Diodes;Si; 40.0V 2.00A 12.0ns Diodes INC Schottky rectifier .MODEL DI_SBR2A40P1 D ( IS=17.0u RS=28.8m BV=40.0 IBV=15.9u + CJO=705p M=0.333 N=1.17 TT=17.3n) *SRC=SBR2M30P1;DI_SBR2M30P1;Diodes;Si; 30.0V 2.00A 12.0ns Diodes INC Schottky rectifier .MODEL DI_SBR2M30P1 D ( IS=17.0u RS=28.8m BV=30.0 IBV=20.0u + CJO=865p M=0.333 N=1.17 TT=17.3n) *SRC=SBR3045CT;DI_SBR3045CT;Diodes;Si; 45.0V 30.0A 35.2ns Diodes Inc. SBR/ SKY .MODEL DI_SBR3045CT D ( IS=2.03m RS=2.30m BV=45.0 IBV=500u + CJO=1.87n M=0.333 N=1.66 TT=50.7n ) *SRC=SBR30A45CT;DI_SBR30A45CT;Diodes;Si; 45.0V 30.0A 35.2ns Diodes Inc. SBR/ SKY .MODEL DI_SBR30A45CT D ( IS=120u RS=1.66m BV=45.0 IBV=500u + CJO=1.87n M=0.333 N=1.18 TT=50.7n ) *SRC=SBR30U30CT;DI_SBR30U30CT;Diodes;Si; 20.0V 30.0A 35.0ns Diodes INC Schottky rectifier .MODEL DI_SBR30U30CT D ( IS=580u RS=3.06m BV=20.0 IBV=230u + CJO=997p M=0.333 N=1.35 TT=50.4n *SRC=SBR3A40SA;DI_SBR3A40SA;Diodes;Si; 40.0V 3.00A 12.0ns Diodes Inc. SBR/ SKY .MODEL DI_SBR3A40SA D ( IS=165u RS=18.5m BV=40.0 IBV=400u + CJO=57.0p M=0.333 N=1.26 TT=17.3n ) *SRC=SBR3M30P1;DI_SBR3M30P1;Diodes;Si; 30.0V 3.00A 12.0ns Diodes INC Schottky rectifier .MODEL DI_SBR3M30P1 D ( IS=11.4u RS=10.6m BV=30.0 IBV=19.0u + CJO=865p M=0.333 N=1.13 TT=17.3n) *SRC=SBR3U100LP;DI_SBR3U100LP;Diodes;Si; 100V 3.00A 12.9ns Diodes Inc. SBR/ SKY .MODEL DI_SBR3U100LP D ( IS=8.73n RS=34.4m BV=100 IBV=16.0u + CJO=141p M=0.333 N=0.700 TT=18.6n ) *SRC=SBR3U150LP;DI_SBR3U150LP;Diodes;Si; 150V 3.00A 11.5ns Diodes Inc. SBR/ SKY .MODEL DI_SBR3U150LP D ( IS=311u RS=22.4m BV=150 IBV=600n + CJO=178p M=0.333 N=2.78 TT=16.6n ) * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=02/07/2009 *VERSION=3 *PIN_ORDER anode cathode * .SUBCKT SBR3U20SA 1 2 D1 1 3 Dmod R1 3 2 95 L1 3 2 1.8E-9 .MODEL Dmod D (IS=8E-5 N=1.1 ISR=5E-8 NR=1.0 BV=21 IBV=1E-3 NBV=5 + IBVL=2E-6 NBVL=500 RS=0.015 CJO=3500E-12 VJ=0.38 M=0.7 EG=0.5 XTI=2 + TRS1=0.003 TT=3e-9) .ENDS * *$ *SRC=SBR3U30P1;DI_SBR3U30P1;Diodes;Si; 30.0V 3.00A 12.0ns Diodes INC Schottky rectifier .MODEL DI_SBR3U30P1 D ( IS=1.14m RS=11.7m BV=30.0 IBV=146u + CJO=951p M=0.333 N=1.71 TT=17.3n) *TITLE: SBR3U40P1 *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=1May2012 *VERSION=1 .MODEL SBR3U40P1 D( IS=20E-6 RS=35m BV=41.0 IBV=70u N=1 TT=10n EG=.53 TRS1=5m CJO=500p M=.6 VJ=.4) * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *SRC=SBR40U45CT;DI_SBR40U45CT;Diodes;Si; 45.0V 40.0A 74.0ns Diodes INC Schottky rectifier .MODEL DI_SBR40U45CT D ( IS=30.5m RS=1.77m BV=45.0 IBV=250u + CJO=8.18n M=0.333 N=2.24 TT=107n .MODEL SBR4U130LP D ( + IS=15.568E-6 + N=1.031 + RS=20e-3 + IKF=257.62E-6 + CJO=5.0982E-9 + M=1.0812 + VJ=68.681E-3 + ISR=38.247E-9 + NR=4.9950 + BV=130.27 + IBV=100.00E-6 + XTI=2.89 ) *SBR60A300CT Spice Model v1.0 Last Revised 12/17/2014 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SBR60A300CT D ( IS=3.829u RS=25.27m BV=330.0 IBV=10.00 + CJO=1.006n M=557.8m N=1.413 TT=25.00n EG=480.0m VJ=826.8m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SRC=SBR60A60CT;DI_SBR60A60CT;Diodes;Si; 60.0V 60.0A 68.0ns Diodes INC Schottky rectifier .MODEL DI_SBR60A60CT D ( IS=1.44m RS=1.34m BV=60.0 IBV=70.0u + CJO=7.24n M=0.333 N=1.72 TT=97.9n ) *SBR10U200P5 Spice Model v1.0 Last Revised 2/24/2015 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SBR10U200P5 D ( IS=35.49n RS=15.06m BV=220.0 IBV=10.00 + CJO=1.190n M=412.1m N=1.366 TT=21.70n EG=480.0m VJ=61.27m ) * (c) 2015 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SRC=SBR8U60P5;;Diodes;Si; 60.0V 8.00A 25.0ns Diodes INC SBR rectifier .MODEL D ( IS=75.3u RS=20.1m BV=60.0 IBV=600u + CJO=13.3n M=0.333 N=1.10 TT=36.0n ) *SBR40U300CTB Spice Model v1.0 Last Revised 12/17/2014 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SBR40U300CTB D ( IS=233.1n RS=16.34m BV=330.0 IBV=10.00 + CJO=1.055n M=487.5m N=1.424 TT=33.00n EG=480.0m VJ=504.9m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *TITLE=SBR1U400P1 *DATE=12/03/2012 *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *VERSION=1 .MODEL SBR1U400P1 D(IS=70n RS=.05 BV=401 IBV=50u CJO=65p M=.41 VJ=.41 N=1.25 ISR=20n IKF=.51m TRS1=0 XTI1=3 TT=85n EG=.75 TIKF=.1) * (c) 2011 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *TITLE=SBR1U200P1 *DATE=5/02/2016 *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *VERSION=2 .SUBCKT SBR1U200P1 1 2 D1 1 2 Dsch D2 1 2 Dpn .MODEL Dsch D(IS=55n RS=1.8 BV=201 IBV=50u CJO=355p M=.41 VJ=.41 N=1.05 ISR=20n IKF=10m TRS1=.001 XTI1=3 TT=50n EG=.6 TIKF=.1) .model Dpn D(IS=8p IKF=30m BV=250 N=1 TT=50n EG=1.12 RS=.008 ISR=.1n) .ends * (c) 2016 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *SBR12U120P5 Spice Model v1.0 Last Revised 3/28/2016 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SBR12U120P5 D ( IS=3.440u RS=40.05m BV=135.0 IBV=10.00 + CJO=3.462n M=3.523 N=1.047 TT=10.00n EG=480.0m VJ=682.4m ) * (c) 2015 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *TITLE: SBR2U150SA *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=16Dec2014 *VERSION=1 .SUBCKT SBR2U150SA 1 2 D1 1 2 Dsch D2 1 2 Dpn .MODEL Dsch D ( IS=4u RS=.3 BV=160.0 IBV=150.0u CJO=951p M=0.333 N=1.145 TT=17.3n EG=.5 TRS1=3m NBV=10 IKF=200m) .model Dpn D(IS=2p IKF=20000m BV=160 TT=50n EG=1.12 RS=.02 ISR=1n) .ENDS * (c) 2014 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL The SBR12U45LH uses SBR patented technology that offers ultra low VF to reduce forward power loss and improve efficiency. Encapsulated in the new PDI-5SP package with a 0.75mm low height profile and protruding leads for easy soldering, it is specially suited for use as a bypass diode in solar panels. *TITLE: SBR2U10LP *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=17Dec2014 *VERSION=1 .MODEL SBR1U30CSP D( IS=5.5u RS=45m BV=32 IBV=150.0u CJO=750p M=1 VJ=.45 N=1.05 TT=30n EG=.5 TRS1=5m IKF=85m) * (c) 2014 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *TITLE: SBR3150SB *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=16Dec2014 *VERSION=1 .SUBCKT SBR3150SB 1 2 D1 1 2 Dsch D2 1 2 Dpn .MODEL Dsch D ( IS=11u RS=.22 BV=160.0 IBV=150.0u CJO=951p M=0.333 N=1.145 TT=17.3n EG=.47 TRS1=2m NBV=10 IKF=120m) .model Dpn D(IS=2p IKF=100 BV=160 TT=50n EG=1.1 RS=.011 ISR=1n) .ENDS * (c) 2014 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *SBR3U60P1 Spice Model v1.0 Last Revised 04/29/2014 Diodes Inc SUPER BARRIER RECTIFIER .MODEL DI_SBR3U60P1 D ( IS=1.638u RS=62.49m BV=66.00 IBV=10.00 + CJO=1.853n M=761.6m N=1.048 TT=10.00n EG=480.0m VJ=173.8m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SBRT15U50SP5 Spice Model v1.0 Last Revised 10/30/2014 Diodes Inc TRENCH SUPER BARRIER RECTIFIER *SIMULATOR=SPICE3 .MODEL DI_SBRT15U50SP5 D ( IS=74.23u RS=5.775m BV=55.00 IBV=10.00 + CJO=14.41n M=489.9m N=1.023 TT=49.80n EG=480.0m VJ=20.30m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *TITLE: SBR2U10LP *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=17Dec2014 *VERSION=1 .MODEL SBR1U30CSP D( IS=5.5u RS=50m BV=32 IBV=150.0u CJO=750p M=1 VJ=.45 N=1.05 TT=30n EG=.5 TRS1=5m IKF=85m) * (c) 2014 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *TITLE: SBR2U10LP *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=9Jun2014 *VERSION=1 .MODEL SBR2U10LP D( IS=26u RS=20m BV=11 IBV=150.0u CJO=790p M=0.65 VJ=.4 N=1.05 TT=50n EG=.5 TRS1=6m ISR=50u) * * (c) 2014 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL .MODEL SBR02U100LP D ( + IS=37.999E-9 + N=1.2423 + RS=1.0042 + IKF=6.4683E-3 + CJO=138.07E-12 + M=1.4985 + VJ=.79033 + ISR=7.0384E-12 + NR=4.9950 + BV=103 + IBV=1.0000E-3 + XTI=2.67 ) *SBR0230T5 Spice Model v1.0 Last Revised 1/12/2016 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SDM02U30LP3 D ( IS=54.13n RS=378.1m BV=50.00 IBV=10.00 + CJO=237.7p M=526.0m N=1.032 TT=10.00n EG=480.0m VJ=12.71m ) * (c) 2015 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *TITLE: SBR2U30P1 *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=31Jan2012 *VERSION=2 *PIN 1=Anode 2=Cathode .MODEL SBR2U30P1 D( IS=60u RS=25m BV=32.0 IBV=150.0u CJO=951p M=0.333 N=1.14 TT=17.3n EG=.5 TRS1=3m NBV=10) * (c) 2011 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * ********************************************************************************************************************* *SRC=10A01;DI_10A01;Diodes;Si; 50.0V 10.0A 3.00us Diodes Inc. 10A Rectifier .MODEL DI_10A01 D ( IS=844n RS=2.06m BV=50.0 IBV=10.0u + CJO=277p M=0.333 N=2.06 TT=4.32u ) ********************************************************************************************************************* ********************************************************************************************************************* *SRC=10A02;DI_10A02;Diodes;Si; 100V 10.0A 3.00us Diodes Inc. 10A Rectifier .MODEL DI_10A02 D ( IS=844n RS=2.06m BV=100 IBV=10.0u + CJO=277p M=0.333 N=2.06 TT=4.32u ) ********************************************************************************************************************* ********************************************************************************************************************* *SRC=10A04;DI_10A04;Diodes;Si; 400V 10.0A 3.00us Diodes Inc. 10A Rectifier .MODEL DI_10A04 D ( IS=844n RS=2.06m BV=400 IBV=10.0u + CJO=277p M=0.333 N=2.06 TT=4.32u ) ********************************************************************************************************************* ********************************************************************************************************************* *SRC=10A05;DI_10A05;Diodes;Si; 600V 10.0A 3.00us Diodes Inc. 10A Rectifier .MODEL DI_10A05 D ( IS=844n RS=2.06m BV=600 IBV=10.0u + CJO=148p M=0.333 N=2.06 TT=4.32u ) ********************************************************************************************************************* ********************************************************************************************************************* *SRC=10A06;DI_10A06;Diodes;Si; 800V 10.0A 3.00us Diodes Inc. 10A Rectifier .MODEL DI_10A06 D ( IS=844n RS=2.06m BV=800 IBV=10.0u + CJO=148p M=0.333 N=2.06 TT=4.32u ) ********************************************************************************************************************* ********************************************************************************************************************* *SRC=10A07;DI_10A07;Diodes;Si; 1.00kV 10.0A 3.00us Diodes Inc. 10A Rectifier .MODEL DI_10A07 D ( IS=844n RS=2.06m BV=1.00k IBV=10.0u + CJO=148p M=0.333 N=2.06 TT=4.32u ) ********************************************************************************************************************* *************************************************************************************************************************************** *SRC=1N4002G;DI_1N4002G;Diodes;Si; 100V 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier .MODEL DI_1N4002G D ( IS=65.4p RS=42.2m BV=100 IBV=5.00u + CJO=14.8p M=0.333 N=1.36 TT=2.88u ) *************************************************************************************************************************************** *SRC=1N4003;DI_1N4003;Diodes;Si; 200V 1.00A 3.00us Diodes, Inc. diode .MODEL DI_1N4003 D ( IS=76.9p RS=42.0m BV=200 IBV=5.00u + CJO=39.8p M=0.333 N=1.45 TT=4.32u ) *************************************************************************************************************************************** *SRC=1N4003G;DI_1N4003G;Diodes;Si; 200V 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier .MODEL DI_1N4003G D ( IS=65.4p RS=42.2m BV=200 IBV=5.00u + CJO=14.8p M=0.333 N=1.36 TT=2.88u ) *************************************************************************************************************************************** *SRC=1N4004;DI_1N4004;Diodes;Si; 400V 1.00A 3.00us Diodes, Inc. diode .MODEL DI_1N4004 D ( IS=76.9p RS=42.0m BV=400 IBV=5.00u + CJO=39.8p M=0.333 N=1.45 TT=4.32u ) *************************************************************************************************************************************** *SRC=1N4004G;DI_1N4004G;Diodes;Si; 400V 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier .MODEL DI_1N4004G D ( IS=65.4p RS=42.2m BV=400 IBV=5.00u + CJO=14.8p M=0.333 N=1.36 TT=2.88u ) *************************************************************************************************************************************** *************************************************************************************************************************************** *SRC=1N4005G;DI_1N4005G;Diodes;Si; 600V 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier .MODEL DI_1N4005G D ( IS=65.4p RS=42.2m BV=600 IBV=5.00u + CJO=14.8p M=0.333 N=1.36 TT=2.88u ) *************************************************************************************************************************************** *SRC=1N4006;DI_1N4006;Diodes;Si; 800V 1.00A 3.00us Diodes, Inc. diode .MODEL DI_1N4006 D ( IS=76.9p RS=42.0m BV=800 IBV=5.00u + CJO=26.5p M=0.333 N=1.45 TT=4.32u ) *************************************************************************************************************************************** *SRC=1N4006G;DI_1N4006G;Diodes;Si; 800V 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier .MODEL DI_1N4006G D ( IS=65.4p RS=42.2m BV=800 IBV=5.00u + CJO=14.8p M=0.333 N=1.36 TT=2.88u ) *************************************************************************************************************************************** *************************************************************************************************************************************** *SRC=1N4007G;DI_1N4007G;Diodes;Si; 1.00kV 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier .MODEL DI_1N4007G D ( IS=65.4p RS=42.2m BV=1.00k IBV=5.00u + CJO=14.8p M=0.333 N=1.36 TT=2.88u ) ************************************************************************************************************************************** *SRC=6A05;DI_6A05;Diodes;Si; 50.0V 6.00A 2.00us Diodes Inc. .MODEL DI_6A05 D ( IS=52.4n RS=7.00m BV=50.0 IBV=10.0u + CJO=60.0p M=0.333 N=1.70 TT=2.88u ) *SRC=6A1;DI_6A1;Diodes;Si; 100V 6.00A 2.00us Diodes Inc. .MODEL DI_6A1 D ( IS=52.4n RS=7.00m BV=100 IBV=10.0u + CJO=60.0p M=0.333 N=1.70 TT=2.88u ) *SRC=6A2;DI_6A2;Diodes;Si; 200V 6.00A 2.00us Diodes Inc. .MODEL DI_6A2 D ( IS=52.4n RS=7.00m BV=200 IBV=10.0u + CJO=60.0p M=0.333 N=1.70 TT=2.88u ) *SRC=6A4;DI_6A4;Diodes;Si; 400V 6.00A 2.00us Diodes Inc. .MODEL DI_6A4 D ( IS=52.4n RS=7.00m BV=400 IBV=10.0u + CJO=60.0p M=0.333 N=1.70 TT=2.88u ) *SRC=6A6;DI_6A6;Diodes;Si; 600V 6.00A 2.00us Diodes Inc. .MODEL DI_6A6 D ( IS=52.4n RS=7.00m BV=600 IBV=10.0u + CJO=60.0p M=0.333 N=1.70 TT=2.88u ) *SRC=6A8;DI_6A8;Diodes;Si; 800V 6.00A 2.00us Diodes Inc. .MODEL DI_6A8 D ( IS=52.4n RS=7.00m BV=800 IBV=10.0u + CJO=60.0p M=0.333 N=1.70 TT=2.88u ) *SRC=DFLR1600;DI_DFLR1600;Diodes;Si; 600V 1.00A 3.00us Diodes Inc Standard Recovery Rectifier .MODEL DI_DFLR1600 D ( IS=5.90n RS=44.7m BV=600 IBV=3.00u + CJO=18.5p M=0.333 N=1.88 TT=4.32u ) *SRC=PDR3G;DI_PDR3G;Diodes;Si; 400V 3.00A 3.09us Diodes Inc. Standard Recovery Rectifier .MODEL DI_PDR3G D ( IS=5.82n RS=13.9m BV=400 IBV=10.0u + CJO=38.5p M=0.333 N=1.70 TT=4.45u ) *SRC=PDR5G;DI_PDR5G;Diodes;Si; 400V 5.00A 3.32us Diodes Inc. Standard Recovery Rectifier .MODEL DI_PDR5G D ( IS=8.05n RS=8.40m BV=400 IBV=10.0u + CJO=75.6p M=0.333 N=1.70 TT=4.78u ) *SRC=S1A;DI_S1A;Diodes;Si; 50.0V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1A D ( IS=7.31e-018 RS=42.0m BV=50.0 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *SRC=S1AB;DI_S1AB;Diodes;Si; 50.0V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1AB D ( IS=7.31e-018 RS=42.0m BV=50.0 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *SRC=S1B;DI_S1B;Diodes;Si; 100V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1B D ( IS=7.31e-018 RS=42.0m BV=100 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *SRC=S1BB;DI_S1BB;Diodes;Si; 100V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1BB D ( IS=7.31e-018 RS=42.0m BV=100 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *SRC=S1D;DI_S1D;Diodes;Si; 200V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1D D ( IS=7.31e-018 RS=42.0m BV=200 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *SRC=S1DB;DI_S1DB;Diodes;Si; 200V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1DB D ( IS=7.31e-018 RS=42.0m BV=200 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *TITLE=S1G-13-F *DATE=19/11/2013 *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *VERSION=1 .model S1G-13-F D(IS=.0005n RS=0.03 CJO=17p M=0.5 VJ=0.75 N=1.1 IKF=.15 ISR=.01u + BV=401 IBV=100u TT=150n EG=.95 TRS1=.1m) * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *SRC=S1GB;DI_S1GB;Diodes;Si; 400V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1GB D ( IS=7.31e-018 RS=42.0m BV=400 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *SRC=S1J;DI_S1J;Diodes;Si; 600V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1J D ( IS=7.31e-018 RS=42.0m BV=600 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *SRC=S1JB;DI_S1JB;Diodes;Si; 600V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1JB D ( IS=7.31e-018 RS=42.0m BV=600 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *SRC=S1K;DI_S1K;Diodes;Si; 800V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1K D ( IS=7.31e-018 RS=42.0m BV=800 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *SRC=S1KB;DI_S1KB;Diodes;Si; 800V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1KB D ( IS=7.31e-018 RS=42.0m BV=800 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *SRC=S1M;DI_S1M;Diodes;Si; 1.00kV 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1M D ( IS=7.31e-018 RS=42.0m BV=1.00k IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *SRC=S1MB;DI_S1MB;Diodes;Si; 1.00kV 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1MB D ( IS=7.31e-018 RS=42.0m BV=1.00k IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *SRC=S2A;DI_S2A;Diodes;Si; 50.0V 1.50A 3.00us Diodes Inc. .MODEL DI_S2A D ( IS=1.30u RS=8.92m BV=50.0 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2B;DI_S2B;Diodes;Si; 100V 1.50A 3.00us Diodes Inc. .MODEL DI_S2B D ( IS=1.30u RS=8.92m BV=100 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2BA;DI_S2BA;Diodes;Si; 100V 1.50A 3.00us Diodes Inc. .MODEL DI_S2BA D ( IS=1.30u RS=8.92m BV=100 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2D;DI_S2D;Diodes;Si; 200V 1.50A 3.00us Diodes Inc. .MODEL DI_S2D D ( IS=1.30u RS=8.92m BV=200 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2DA;DI_S2DA;Diodes;Si; 200V 1.50A 3.00us Diodes Inc. .MODEL DI_S2DA D ( IS=1.30u RS=8.92m BV=200 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2K;DI_S2K;Diodes;Si; 800V 1.50A 3.00us Diodes Inc. .MODEL DI_S2K D ( IS=1.30u RS=8.92m BV=800 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S3A;DI_S3A;Diodes;Si; 50.0V 3.00A 3.00us Diodes Inc. - .MODEL DI_S3A D ( IS=1.37n RS=14.0m BV=50.0 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) *SRC=S3A;DI_S3A;Diodes;Si; 50.0V 3.00A 3.00us Diodes Inc. - .MODEL DI_S3A D ( IS=1.37n RS=14.0m BV=50.0 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) *SRC=S3BB;S3BB;Diodes;Si; 100V 3.00A 3.00us Diodes Inc. - .MODEL S3BB D ( IS=1.37n RS=14.0m BV=100 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) *SRC=S3BB;S3BB;Diodes;Si; 100V 3.00A 3.00us Diodes Inc. - .MODEL S3BB D ( IS=1.37n RS=14.0m BV=100 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) *SRC=S3DB;DI_S3DB;Diodes;Si; 200V 3.00A 3.00us Diodes Inc. - .MODEL DI_S3DB D ( IS=1.37n RS=14.0m BV=200 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) *SRC=S3GB;DI_S3GB;Diodes;Si; 400V 3.00A 3.00us Diodes Inc. - .MODEL DI_S3GB D ( IS=1.37n RS=14.0m BV=400 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) *SRC=S3K;DI_S3K;Diodes;Si; 800V 3.00A 3.00us Diodes Inc. - .MODEL DI_S3K D ( IS=1.37n RS=14.0m BV=800 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) *SRC=S3M;DI_S3M;Diodes;Si; 1.00kV 3.00A 3.00us Diodes Inc. - .MODEL DI_S3M D ( IS=1.37n RS=14.0m BV=1.00k IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) *SRC=S3M;DI_S3M;Diodes;Si; 1.00kV 3.00A 3.00us Diodes Inc. - .MODEL DI_S3M D ( IS=1.37n RS=14.0m BV=1.00k IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) *SRC=S5AC;DI_S5AC;Diodes;Si; 50.0V 5.00A 2.00us Diodes Inc. - .MODEL DI_S5AC D ( IS=2.28n RS=8.40m BV=50.0 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=2.88u ) *SRC=S5BC;DI_S5BC;Diodes;Si; 100V 5.00A 2.00us Diodes Inc. - .MODEL DI_S5BC D ( IS=2.28n RS=8.40m BV=100 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=2.88u ) *SRC=S5DC;DI_S5DC;Diodes;Si; 200V 5.00A 2.00us Diodes Inc. - .MODEL DI_S5DC D ( IS=2.28n RS=8.40m BV=200 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=2.88u ) *SRC=S5GC;DI_S5GC;Diodes;Si; 400V 5.00A 2.00us Diodes Inc. .MODEL DI_S5GC D ( IS=2.28n RS=8.40m BV=400 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=2.88u ) *SRC=S5JC;DI_S5JC;Diodes;Si; 600V 5.00A 2.00us Diodes Inc. - .MODEL DI_S5JC D ( IS=2.28n RS=8.40m BV=600 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=2.88u ) *SRC=S5KC;DI_S5KC;Diodes;Si; 800V 5.00A 2.00us Diodes Inc. - .MODEL DI_S5KC D ( IS=2.28n RS=8.40m BV=800 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=2.88u ) *SRC=S5MC;DI_S5MC;Diodes;Si; 1.00kV 5.00A 2.00us Diodes Inc. - .MODEL DI_S5MC D ( IS=2.28n RS=8.40m BV=1.00k IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=2.88u ) *SRC=S8KC;S8KC;Diodes;Si; 800V 8.00A 3.00us Diodes Inc .MODEL S8KC D ( IS=777n RS=8.87m BV=800 IBV=10.0u + CJO=74.0p M=0.333 N=1.65 TT=4.32u ) *SRC=S8MC;S8MC;Diodes;Si; 1.00kV 8.00A 3.00us Diodes Inc .MODEL S8MC D ( IS=777n RS=8.87m BV=1.00k IBV=10.0u + CJO=74.0 M=0.333 N=1.65 TT=4.32u *TITLE=PDR5K *DATE=1/04/2015 *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *VERSION=1 .MODEL PDR5K D(IS=1n RS=.006 BV=850 IBV=50u CJO=88p M=.4 VJ=.6 N=1.5 ISR=2n TRS1=0 XTI1=3 IKF=10 TT=2u EG=1.18) * (c) 2015 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *PD3R1600 Spice Model v1.0 Last Revised 04/02/2014 Diodes Inc SURFACE MOUNT STANDARD RECTIFIER .MODEL DI_PD3R1600 D ( IS=240.8p RS=22.56m BV=660 IBV=10 + CJO=5.000n M=528.1m N=1.620 TT=10.00n EG=480m VJ=139.2m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan ********************************************************************************************************************* *SRC=10A03;DI_10A03;Diodes;Si; 200V 10.0A 3.00us Diodes Inc. 10A Rectifier .MODEL DI_10A03 D ( IS=844n RS=2.06m BV=200 IBV=10.0u + CJO=277p M=0.333 N=2.06 TT=4.32u ) ********************************************************************************************************************* *************************************************************************************************************************************** *SRC=1N4001G;DI_1N4001G;Diodes;Si; 50.0V 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier .MODEL DI_1N4001G D ( IS=65.4p RS=42.2m BV=50.0 IBV=5.00u + CJO=14.8p M=0.333 N=1.36 TT=2.88u ) *************************************************************************************************************************************** *SRC=1N4007;DI_1N4007;Diodes;Si; 1.00kV 1.00A 3.00us Diodes, Inc. diode .MODEL DI_1N4007 D ( IS=76.9p RS=42.0m BV=1.00k IBV=5.00u + CJO=26.5p M=0.333 N=1.45 TT=4.32u ) *SRC=6A10;DI_6A10;Diodes;Si; 1.00kV 6.00A 2.00us Diodes Inc. .MODEL DI_6A10 D ( IS=52.4n RS=7.00m BV=1.00k IBV=10.0u + CJO=60.0p M=0.333 N=1.70 TT=2.88u ) *SRC=S2G;DI_S2G;Diodes;Si; 400V 1.50A 3.00us Diodes Inc. .MODEL DI_S2G D ( IS=1.30u RS=8.92m BV=400 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2J;DI_S2J;Diodes;Si; 600V 1.50A 3.00us Diodes Inc. .MODEL DI_S2J D ( IS=1.30u RS=8.92m BV=600 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2JA;DI_S2JA;Diodes;Si; 600V 1.50A 3.00us Diodes Inc. .MODEL DI_S2JA D ( IS=1.30u RS=8.92m BV=600 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2KA;DI_S2KA;Diodes;Si; 800V 1.50A 3.00us Diodes Inc. .MODEL DI_S2KA D ( IS=1.30u RS=8.92m BV=800 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2M;DI_S2M;Diodes;Si; 1.00kV 1.50A 3.00us Diodes Inc. .MODEL DI_S2M D ( IS=1.30u RS=8.92m BV=1.00k IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2MA;DI_S2MA;Diodes;Si; 1.00kV 1.50A 3.00us Diodes Inc. .MODEL DI_S2MA D ( IS=1.30u RS=8.92m BV=1.00k IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S3D;DI_S3D;Diodes;Si; 200V 3.00A 3.00us Diodes Inc. - .MODEL DI_S3D D ( IS=1.37n RS=14.0m BV=200 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) *SRC=S3GB;DI_S3GB;Diodes;Si; 400V 3.00A 3.00us Diodes Inc. - .MODEL DI_S3GB D ( IS=1.37n RS=14.0m BV=400 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) *SRC=S3K;DI_S3K;Diodes;Si; 800V 3.00A 3.00us Diodes Inc. - .MODEL DI_S3K D ( IS=1.37n RS=14.0m BV=800 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) *SRC=1N4002;DI_1N4002;Diodes;Si; 100V 1.00A 3.00us Diodes, Inc. diode .MODEL DI_1N4002 D ( IS=76.9p RS=42.0m BV=100 IBV=5.00u + CJO=39.8p M=0.333 N=1.45 TT=4.32u ) *SRC=1N4005;DI_1N4005;Diodes;Si; 600V 1.00A 3.00us Diodes, Inc. diode .MODEL DI_1N4005 D ( IS=76.9p RS=42.0m BV=600 IBV=5.00u + CJO=26.5p M=0.333 N=1.45 TT=4.32u ) *SRC=S2AA;DI_S2AA;Diodes;Si; 50.0V 1.50A 3.00us Diodes Inc. .MODEL DI_S2AA D ( IS=1.30u RS=8.92m BV=50.0 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2GA;DI_S2GA;Diodes;Si; 400V 1.50A 3.00us Diodes Inc. .MODEL DI_S2GA D ( IS=1.30u RS=8.92m BV=400 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=DFLR1200;DI_DFLR1200;Diodes;Si; 200V 1.00A 3.00us Diodes Inc Standard Recovery Rectifier .MODEL DI_DFLR1200 D ( IS=5.90n RS=44.7m BV=200 IBV=3.00u + CJO=18.5p M=0.333 N=1.88 TT=4.32u ) *SRC=DFLR1400;DI_DFLR1400;Diodes;Si; 400V 1.00A 3.00us Diodes Inc Standard Recovery Rectifier .MODEL DI_DFLR1400 D ( IS=5.90n RS=44.7m BV=400 IBV=3.00u + CJO=18.5p M=0.333 N=1.88 TT=4.32u ) *SRC=1N5711WS;DI_1N5711WS;Diodes;Si; 70.0V 15.0mA 1.00ns Diodes Inc. .MODEL DI_1N5711WS D ( IS=315n RS=2.80 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=2.03 TT=1.44n ) *SRC=BAS40;DI_BAS40;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode .MODEL DI_BAS40 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) * * This model account for one of the two diodes contained in the * BAS40-4 device. The other one is totally identical. * .LIB BAS40_04 * .SUBCKT BAS40_04 A K * D1 A K BAS40_1 D2 A K1 BAS40_2 V1 K1 K DC 217e-3 * .MODEL BAS40_1 D ( +LEVEL = 1 IS = 2.24014e-09 RS = 7.23547 +N = 1.02505 IKF = 0.255776 +CJO = 3.0881e-12 VJ = 119.67e-3 MJ = 183.18e-3 +FC = 0.5 XTI = 0.60541 EG = 0.75453 +TRS1 = 0.00733869 TRS2 = 1.45813e-05 IBV = 0.01 +BV = 40 TT = 6.02e-9 ) * .MODEL BAS40_2 D ( +LEVEL = 1 IS = 5.04958e-11 RS = 0.00692754 +N = 1.10729 XTI = 1.45276 EG = 1.46766 +TRS1 = 0.0021771 TRS2 = 0.000729073 IKF = 0.0102054 +IBV = 0.01 BV = 1e3 TT = 0 ) * .ENDS BAS40_04 * .ENDL BAS40_04 *SRC=BAS40-04T;DI_BAS40-04T;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS40-04T D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) *SRC=BAS40-05;DI_BAS40-05;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS40-05 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) *SRC=BAS40-05T;DI_BAS40-05T;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS40-05T D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) *SRC=BAS40-06T;DI_BAS40-06T;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS40-06T D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) *SRC=BAS40BRW;DI_BAS40BRW;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, Quad, one node of four .MODEL DI_BAS40BRW D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) *SRC=BAS40DW-04;DI_BAS40DW-04;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, Quad, one node of four .MODEL DI_BAS40DW-04 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) *SRC=BAS40DW-05;DI_BAS40DW-05;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, Quad, one node of four .MODEL DI_BAS40DW-05 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) *SRC=BAS40DW-06;DI_BAS40DW-06;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, Quad, one node of four .MODEL DI_BAS40DW-06 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) *SRC=BAS40LP;DI_BAS40LP;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc Schottky .MODEL DI_BAS40LP D ( IS=2.93u RS=1.29 BV=40.0 IBV=200n + CJO=2.30p M=0.333 N=2.39 TT=7.20n ) *SRC=BAS40W;DI_BAS40W;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode .MODEL DI_BAS40W D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) * *Zetex BAT54 Spice Model v1.0 Last Revised 25/04/00 * .MODEL BAT54 D Is=649e-9 N=1.04 RS=2.09 IKF=20e-3 +XTI=2 EG=0.58 +CJO=12.4e-12 M=0.381 VJ=0.391 +BV=50 IBV=100e-6 ISR=431e-9 NR=4.99 * *$ * * (c) 2005 Zetex Semiconductors plc * * The copyright in these models and the designs embodied belong * to Zetex Semiconductors plc (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Zetex PLC, its distributors * or agents. * * Zetex Semiconductors plc, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *SRC=BAT54A;DI_BAT54A;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54A D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54JW;DI_BAT54JW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54JW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *BAT54LP Spice Model v1.0 Last Revised 08/04/2014 Diodes Inc SUPER BARRIER RECTIFIER *SIMULATOR=SPICE3 .MODEL DI_BAT54LP D ( IS=98.64n RS=1.080 BV=40.00 IBV=10.00 + CJO=222.3p M=548.8m N=1.140 TT=10.00n EG=480.0m VJ=5.075m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SRC=BAT54LPS;DI_BAT54LPS;Diodes;Si; 30.0V 0.200A 2.00ns Diodes Inc. SBR/ SKY .MODEL DI_BAT54LPS D ( IS=20.9n RS=0.895 BV=30.0 IBV=2.00u + CJO=10.6p M=0.333 N=1.07 TT=2.88n ) *SRC=BAT54S;DI_BAT54S;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54S D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54SDW;DI_BAT54SDW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, quad, one node of four .MODEL DI_BAT54SDW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54ST;DI_BAT54ST;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54ST D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54SW;DI_BAT54SW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54SW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54T;DI_BAT54T;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode .MODEL DI_BAT54T D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54TW;DI_BAT54TW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, tripple, one node of three .MODEL DI_BAT54TW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54V;DI_BAT54V;Diodes;Si; 29.6V 0.200A 5.00ns Diodes Inc. One Element of Dual Schottky Diodes .MODEL DI_BAT54V D ( IS=124n RS=0.210 BV=29.6 IBV=2.00 + CJO=13.3 M=0.333 N=1.19 TT=7.20n ) *SRC=BAT54W;DI_BAT54W;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode .MODEL DI_BAT54W D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54WS;DI_BAT54WS;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode .MODEL DI_BAT54WS D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=PS3S0230;DI_PD3S0230;Diodes;Si; 30.0V 0.200A 2.00ns Diodes INC Schottky Diode .MODEL DI_PD3S0230 D ( IS=400n RS=0.378 BV=30.0 IBV=2.00u + CJO=14.6p M=0.333 N=1.31 TT=2.88n ) ******************************************************************************************************************************************* *SRC=QSBT40;DI_QSBT40;Diodes;Si; 30.0V 0.200A 50.0ns Diodes Inc. Schottky Bus - Single Device of Multiple .MODEL DI_QSBT40 D ( IS=500n RS=0.211 BV=30.0 IBV=2.00u + CJO=10.0p M=0.333 N=1.70 TT=72.0n ) ******************************************************************************************************************************************* *SRC=SD101AW;DI_SD101AW;Diodes;Si; 60.0V 15.0mA 1.00ns Diodes Inc. Schottky .MODEL DI_SD101AW D ( IS=1.82u RS=2.80 BV=60.0 IBV=200n + CJO=2.65p M=0.333 N=1.70 TT=1.44n ) ******************************************************************************************************************************************* *SRC=SD101AWS;DI_SD101AWS;Diodes;Si; 60.0V 15.0mA 1.00ns Diodes Inc. Schottky- SD101AWS/BWS/CWS .MODEL DI_SD101AWS D ( IS=230n RS=2.13 BV=60.0 IBV=200n + CJO=2.00p M=0.333 N=1.96 TT=1.44n ) ******************************************************************************************************************************************* *SRC=SD101BW;DI_SD101BW;Diodes;Si; 50.0V 15.0mA 1.00ns Diodes Inc. Schottky .MODEL DI_SD101BW D ( IS=1.82u RS=2.80 BV=50.0 IBV=200n + CJO=2.65p M=0.333 N=1.70 TT=1.44n ) *SRC=SD101BWS;DI_SD101BWS;Diodes;Si; 50.0V 15.0mA 1.00ns Diodes Inc. Schottky .MODEL DI_SD101BWS D ( IS=1.82u RS=2.80 BV=50.0 IBV=200n + CJO=2.65p M=0.333 N=1.70 TT=1.44n ) *SRC=SD101CW;DI_SD101CW;Diodes;Si; 40.0V 15.0mA 1.00ns Diodes Inc. Schottky .MODEL DI_SD101CW D ( IS=1.82u RS=2.80 BV=40.0 IBV=200n + CJO=2.65p M=0.333 N=1.70 TT=1.44n ) *SRC=SD101CWS;DI_SD101CWS;Diodes;Si; 40.0V 15.0mA 1.00ns Diodes Inc. Schottky .MODEL DI_SD101CWS D ( IS=1.82u RS=2.80 BV=40.0 IBV=200n + CJO=2.65p M=0.333 N=1.70 TT=1.44n ) *SRC=SD103ASDM;DI_SD103ASDM;Diodes;Si; 40.0V 0.350A 10.0ns Diodes Inc. Schottky Barrier Diode, quad, one node of four .MODEL DI_SD103ASDM D ( IS=646n RS=0.120 BV=40.0 IBV=5.00u + CJO=29.2 M=0.333 N=1.28 TT=14.4n ) *SRC=SD103ATW;DI_SD103ATW;Diodes;Si; 40.0V 0.350A 10.0ns Diodes Inc. Schottky Barrier Diode, tripple, one node of three .MODEL DI_SD103ATW D ( IS=646n RS=0.120 BV=40.0 IBV=5.00u + CJO=29.2 M=0.333 N=1.28 TT=14.4n ) *SRC=SD103AW;DI_SD103AW;Diodes;Si; 40.0V 0.350A 10.0ns Diodes Inc. Schottky .MODEL DI_SD103AW D ( IS=8.65u RS=0.120 BV=40.0 IBV=5.00u + CJO=53.0p M=0.333 N=1.70 TT=14.4n ) *SRC=SD103BW;DI_SD103BW;Diodes;Si; 30.0V 0.350A 10.0ns Diodes Inc. Schottky .MODEL DI_SD103BW D ( IS=8.65u RS=0.120 BV=30.0 IBV=5.00u + CJO=53.0p M=0.333 N=1.70 TT=14.4n ) *SRC=SD103BWS;DI_SD103BWS;Diodes;Si; 30.0V 0.350A 10.0ns Diodes Inc. Schottky .MODEL DI_SD103BWS D ( IS=8.65u RS=0.120 BV=30.0 IBV=5.00u + CJO=53.0p M=0.333 N=1.70 TT=14.4n ) *SRC=SD103CW;DI_SD103CW;Diodes;Si; 20.0V 0.350A 10.0ns Diodes Inc. Schottky .MODEL DI_SD103CW D ( IS=8.65u RS=0.120 BV=20.0 IBV=5.00u + CJO=53.0p M=0.333 N=1.70 TT=14.4n ) *SRC=SD103CWS;DI_SD103CWS;Diodes;Si; 20.0V 0.350A 10.0ns Diodes Inc. Schottky .MODEL DI_SD103CWS D ( IS=8.65u RS=0.120 BV=20.0 IBV=5.00u + CJO=53.0p M=0.333 N=1.70 TT=14.4n ) *SRC=SDM03MT40;DI_SDM03MT40;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky .MODEL DI_SDM03MT40 D ( IS=309u RS=0.210 BV=40.0 IBV=1.00u + CJO=2.65p M=0.333 N=6.81 TT=7.20n ) *SRC=SDM03U40;DI_SDM03U40;Diodes;Si; 30.0V 30.0mA 1.00ns Diodes Inc. Schottky .MODEL DI_SDM03U40 D ( IS=16.5u RS=2.20 BV=30.0 IBV=500n + CJO=2.59p M=0.333 N=2.92 TT=1.44n ) *SRC=SDM10M45SD;DI_SDM10M45SD;Diodes;Si; 45.0V 0.100A 5.00ns Diodes Inc. Schottky .MODEL DI_SDM10M45SD D ( IS=290n RS=0.420 BV=45.0 IBV=1.00u + CJO=10.6p M=0.333 N=1.28 TT=7.20n ) *SRC=SDM10P45;DI_SDM10P45;Diodes;Si; 45.0V 0.100A 5.00ns Diodes Inc. Schottky .MODEL DI_SDM10P45 D ( IS=745n RS=0.792 BV=45.0 IBV=1.00u + CJO=11.2p M=0.333 N=1.39 TT=7.20n ) *SRC=SDM10U45;DI_SDM10U45;Diodes;Si; 45.0V 0.100A 2.00ns Diodes Inc. SBR/ SKY .MODEL DI_SDM10U45 D ( IS=7.68u RS=1.32 BV=45.0 IBV=1.00u + CJO=13.3p M=0.333 N=1.81 TT=2.88n ) *SRC=SDM10U45LP;DI_SDM10U45LP;Diodes;Si; 40.0V 0.300A 5.00ns Diodes Inc. Schottky .MODEL DI_SDM10U45LP D ( IS=26.8u RS=0.140 BV=40.0 IBV=1.00u + CJO=10.6p M=0.333 N=2.45 TT=7.20n ) *SRC=SDM20E40C;DI_SDM20E40C;Diodes;Si; 40.0V 0.400A 5.00ns Diodes Inc. Schottky .MODEL DI_SDM20E40C D ( IS=3.15u RS=0.165 BV=40.0 IBV=70.0u + CJO=39.8p M=0.333 N=1.16 TT=7.20n ) *SRC=SDM20N40A;DI_SDM20N40A;Diodes;Si; 40.0V 0.200A 5.00ns Diodes, Inc. Dual Schottky, Model for Single Schottky Only .MODEL DI_SDM20N40A D ( IS=34.0p RS=0.211 BV=40.0 IBV=15.0u + CJO=50.0p M=0.333 N=1.73 TT=7.20n *SRC=SDM20U30;DI_SDM20U30;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky .MODEL DI_SDM20U30 D ( IS=59.4n RS=0.210 BV=30.0 IBV=150u + CJO=19.9p M=0.333 N=0.700 TT=7.20n ) *SRC=SDM20U30LP;DI_SDM20U30LP;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky .MODEL DI_SDM20U30LP D ( IS=59.4n RS=0.210 BV=30.0 IBV=150u + CJO=19.9p M=0.333 N=0.700 TT=7.20n ) *SRC=SDM20U40;DI_SDM20U40;Diodes;Si; 40.0V 0.250A 10.0ns Diodes Inc. Schottky .MODEL DI_SDM20U40 D ( IS=4.32u RS=0.168 BV=40.0 IBV=5.00u + CJO=39.8p M=0.333 N=1.70 TT=14.4n ) *SRC=SDM40E20LC;DI_SDM40E20LC;Diodes;Si; 20.0V 0.400A 10.0ns Diodes INC Schottky Diode .MODEL DI_SDM40E20LC D ( IS=2.83m RS=23.0m BV=20.0 IBV=250u + CJO=66.3p M=0.333 N=2.17 TT=14.4n *SRC=SDMG0340L;DI_SDMG0340L;Diodes;Si; 40.0V 30.0mA 1.00ns Diodes Inc. .MODEL DI_SBMG0340L D ( IS=13.9u RS=2.57 BV=40.0 IBV=10.0u + CJO=2.65p M=0.333 N=2.82 TT=1.44n ) *SRC=SDMG0340LA;DI_SDMG0340LA;Diodes;Si; 40.0V 30.0mA 1.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_SBMG0340LA D ( IS=13.9u RS=2.57 BV=40.0 IBV=10.0u + CJO=2.65p M=0.333 N=2.82 TT=1.44n ) *SRC=SDMG0340LC;DI_SDMG0340LC;Diodes;Si; 40.0V 30.0mA 1.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_SBMG0340LC D ( IS=13.9u RS=2.57 BV=40.0 IBV=10.0u + CJO=2.65p M=0.333 N=2.82 TT=1.44n ) *SRC=SDMG0340LS;DI_SDMG0340LS;Diodes;Si; 40.0V 30.0mA 1.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_SBMG0340LS D ( IS=13.9u RS=2.57 BV=40.0 IBV=10.0u + CJO=2.65p M=0.333 N=2.82 TT=1.44n ) *SRC=SDMK0340L;DI_SDMK0340L;Diodes;Si; 40.0V 30.0mA 3.00us Diodes Inc. Schottky Barrier Diode .MODEL DI_SDMK0340L D ( IS=11.2u RS=3.64 BV=40.0 IBV=500n + CJO=2.65p M=0.333 N=2.69 TT=4.32u ) ****************************************************************************************************************************** *SRC=SDMP0340LAT;DI_SDMP0340LAT;Diodes;Si; 40.0V 30.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_SDMP0340LAT D ( IS=16.5u RS=2.20 BV=40.0 IBV=1.00u + CJO=2.65p M=0.333 N=2.92 TT=7.20n ) ************************************************************************************************************************************************** *SRC=SDMP0340LCT;DI_SDMP0340LCT;Diodes;Si; 40.0V 30.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_SDMP0340LCT D ( IS=16.5u RS=2.20 BV=40.0 IBV=1.00u + CJO=2.65p M=0.333 N=2.92 TT=7.20n ) ************************************************************************************************************************************************** *SRC=SDMP0340LST;DI_SDMP0340LST;Diodes;Si; 40.0V 30.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_SDMP0340LST D ( IS=16.5u RS=2.20 BV=40.0 IBV=1.00u + CJO=2.65p M=0.333 N=2.92 TT=7.20n ) ************************************************************************************************************************************************** *SRC=SDMP0340LT;DI_SDMP0340LT;Diodes;Si; 40.0V 30.0mA 5.00ns Diodes Inc. Schottky .MODEL DI_SDMP0340LT D ( IS=16.5u RS=2.20 BV=40.0 IBV=1.00u + CJO=2.65p M=0.333 N=2.92 TT=7.20n ) *ZETEX ZHCS350 Spice Model v1.0 Last Revised 26/04/2005 * .MODEL ZHCS350 D IS=1.35e-7 N=1.06 ISR=6e-7 NR=1.1 RS=0.9 +IKF=0.2 BV=65 TRS1=6.5e-3 XTI=2 EG=0.63 Fc=0.5 CJO=18.84e-12 +M=0.5 VJ=0.33 TT=1.6e-9 * *$ * *ZETEX ZHCS400 Spice Model v1.0 Last Revised 22/05/02 * .MODEL ZHCS400 D IS=9.1e-8 N=.59 RS=250e-3 IKF=1.37e-3 XTI=2 +EG=.58 CJO=101p M=.5231 VJ=.3905 Fc=.5 BV=60 IBV=100E-6 +ISR=2.2E-6 NR=1.8 * *$ * *ZETEX ZLLS350 Spice Model v2.0 Last revision 24/05/2007 * *This simple model has limitations with respect to temperature *best fit of forward characteristitics with temperature EG=0.63 *best fit of reverse characteristitics with temperature EG=0.85 * .MODEL ZLLS350 D IS=14E-8 N=1.03 ISR=9E-8 NR=2 IKF=0.043 BV=56 IBV=1E-4 +RS=1.2 TT=1e-9 CJO=13.5E-12 VJ=0.6 M=0.33 EG=0.63 XTI=2 TRS1=4E-3 * *$ * *SRC=BAS40T;DI_BAS40T;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode .MODEL DI_BAS40T D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) *SRC=BAS40TW;DI_BAS40TW;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, Tripple, one node of three .MODEL DI_BAS40TW D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) *SRC=BAS40W-04;DI_BAS40W-04;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS40W-04 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) *SRC=BAS40W-05;DI_BAS40W-05;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS40W-05 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) *SRC=BAS40W-06;DI_BAS40W-06;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS40W-06 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) *SRC=BAS70;DI_BAS70;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. - .MODEL DI_BAS70 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70-04;DI_BAS70-04;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS70-04 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70-04T;DI_BAS70-04T;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS70-04T D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70-05;DI_BAS70-05;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS70-05 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70-05T;DI_BAS70-05T;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS70-05T D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70-06;DI_BAS70-06;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS70-06 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70-06T;DI_BAS70-06T;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS70-06T D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70BRW;DI_BAS70BRW;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, quad, one node of four .MODEL DI_BAS70BRW D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70DW-04;DI_BAS70DW-04;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, quad, one node of four .MODEL DI_BAS70DW-04 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70DW-05;DI_BAS70DW-05;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, quad, one node of four .MODEL DI_BAS70DW-05 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70DW-06;DI_BAS70DW-06;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, quad, one node of four .MODEL DI_BAS70DW-06 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70JW;DI_BAS70JW;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS70JW D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70T;DI_BAS70T;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode .MODEL DI_BAS70T D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70TW;DI_BAS70TW;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, tripple, one node of three .MODEL DI_BAS70TW D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70W;DI_BAS70W;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode .MODEL DI_BAS70W D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70W-04;DI_BAS70W-04;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS70W-04 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70W-05;DI_BAS70W-05;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS70W-05 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70W-06;DI_BAS70W-06;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS70W-06 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAT40V;DI_BAT40V;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky .MODEL DI_BAT40V D ( IS=82.9n RS=0.373 BV=40.0 IBV=10.0u + CJO=11.9p M=0.333 N=1.14 TT=7.20n ) *SRC=BAT40VC;DI_BAT40VC;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky .MODEL DI_BAT40VC D ( IS=82.9n RS=0.373 BV=40.0 IBV=10.0u + CJO=11.9p M=0.333 N=1.14 TT=7.20n ) *SRC=BAT42W;DI_BAT42W;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc Schottky Diode .MODEL DI_BAT42W D ( IS=87.5u RS=18.1m BV=30.0 IBV=500n + CJO=8.88p M=0.333 N=3.51 TT=7.20n ) *SRC=BAT42WS;DI_BAT42WS;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc Schottky Diode .MODEL DI_BAT42WS D ( IS=87.5u RS=18.1m BV=30.0 IBV=500n + CJO=8.88p M=0.333 N=3.51 TT=7.20n ) *SRC=1N6263W;DI_1N6263W;Diodes;Si; 60.0V 15.0mA 1.00ns Diodes Inc. Schottky .MODEL DI_1N6263W D ( IS=1.82u RS=2.80 BV=60.0 IBV=200n + CJO=2.65p M=0.333 N=1.70 TT=1.44n ) *SRC=BAT43W;DI_BAT43W;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc Schottky Diode .MODEL DI_BAT43W D ( IS=87.5u RS=18.1m BV=30.0 IBV=500n + CJO=8.88p M=0.333 N=3.51 TT=7.20n ) *SRC=BAT43WS;DI_BAT43WS;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc Schottky Diode .MODEL DI_BAT43WS D ( IS=87.5u RS=18.1m BV=30.0 IBV=500n + CJO=8.88p M=0.333 N=3.51 TT=7.20n ) *SRC=BAT46W;DI_BAT46W;Diodes;Si; 100V 0.150A 5.00ns Diodes Inc. Schottky .MODEL DI_BAT46W D ( IS=603n RS=0.280 BV=100 IBV=5.00u + CJO=7.96p M=0.333 N=1.70 TT=7.20n ) *ZETEX BAT54 Spice Model v1.0 Last Revised 25/04/00 * .MODEL BAT54 D Is=649e-9 N=1.04 RS=2.09 IKF=20e-3 +XTI=2 EG=0.58 +CJO=12.4e-12 M=0.381 VJ=0.391 +BV=50 IBV=100e-6 ISR=431e-9 NR=4.99 * *$ * *SRC=BAT54ADW;DI_BAT54ADW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, quad, one node of four .MODEL DI_BAT54ADW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54AT;DI_BAT54AT;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54AT D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54AW;DI_BAT54AW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54AW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54BRW;DI_BAT54BRW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, quad, one node of four .MODEL DI_BAT54BRW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54C;DI_BAT54C;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54C D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54CDW;DI_BAT54CDW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, quad, one node of four .MODEL DI_BAT54CDW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54CT;DI_BAT54CT;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54CT D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54CW;DI_BAT54CW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54CW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) ******************************************************************************************************************************************* *SRC=BAT54DW;DI_BAT54DW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky, dual, one of two nodes .MODEL DI_BAT54DW D ( IS=235n RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=1.28 TT=7.20n ) ******************************************************************************************************************************************* *ZETEX ZLLS2000 Spice Model v2.0 Last revision 25/05/2007 * *This simple model has limitations with respect to temperature *for best fit of forward characteristitics with temperature EG=0.63 *for best fit of reverse characteristitics with temperature EG=0.85 * .MODEL ZLLS2000 D IS=2.7e-6 N=1.03 ISR=4.5E-6 NR=2 IKF=1.3 BV=56 IBV=1E-3 +RS=0.07 TT=6e-9 CJO=265e-12 VJ=0.6 M=0.34 EG=0.63 XTI=2 TRS1=4e-3 * *$ * *ZETEX ZLLS400 Spice Model v2.0 Last revision 24/05/2007 * *This simple model has limitations with respect to temperature *best fit of forward characteristitics with temperature EG=0.63 *best fit of reverse characteristitics with temperature EG=0.85 * .MODEL ZLLS400 D IS=6.1e-7 N=1.03 ISR=1.4E-6 NR=2 IKF=0.32 BV=42 IBV=2E-4 +RS=0.27 TT=3e-9 CJO=71e-12 VJ=0.6 M=0.36 EG=0.63 XTI=2 TRS1=4e-3 * *$ * *ZETEX ZLLS500 Spice Model v2.0 Last revision 24/05/2007 * *This simple model has limitations with respect to temperature *best fit of forward characteristitics with temperature EG=0.63 *best fit of reverse characteristitics with temperature EG=0.85 * .MODEL ZLLS500 D IS=6.1e-7 N=1.03 ISR=1.4E-6 NR=2 IKF=0.32 BV=42 IBV=2E-4 +RS=0.27 TT=3e-9 CJO=71e-12 VJ=0.6 M=0.36 EG=0.63 XTI=2 TRS1=4e-3 * *$ * *SRC=BAS40-06;DI_BAS40-06;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS40-06 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) *TITLE=SDM02U30LP3 *DATE=30/08/2016 *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *VERSION=1 .MODEL SDM02U30LP3 D(IS=.22u RS=2.2 BV=33 IBV=110u CJO=6p M=.33 VJ=.4 N=1 ISR=1u IKF=100m TRS1=5m XTI1=3 TT=30n EG=.54 NBV=2) * (c) 2016 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *SDM02U30CSP Spice Model v1.0 Last Revised 8/31/2016 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SDM02U30CSP D ( IS=276.7n RS=424.6p BV=50.00 IBV=10.00 + CJO=261.8p M=526.0m N=625.2p TT=1.627n EG=480.0m VJ=8.630m ) * (c) 2016 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SDM02M30LP3 Spice Model v1.0 Last Revised 8/31/2016 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SDM02M30LP3 D ( IS=25.07n RS=444.1p BV=50.00 IBV=10.00 + CJO=45.92p M=357.3m N=285.5 TT=10.00n EG=480.0m VJ=1.309m ) * (c) 2016 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SRC=SDM40E20LS;DI_SDM40E20LS;Diodes;Si; 20.0V 0.400A 5.00ns Diodes Inc. Schottky .MODEL DI_SDM40E20LS D ( IS=54.8u RS=0.132 BV=20.0 IBV=250u + CJO=199p M=0.333 N=1.34 TT=7.20n ) *SRC=DF005M;DI_DF005M;Diodes;Si; 50.0V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF005M D ( IS=4.42n RS=42.0m BV=50.0 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF005S;DI_DF005S;Diodes;Si; 50.0V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF005S D ( IS=4.42n RS=42.0m BV=50.0 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF01M;DI_DF01M;Diodes;Si; 100V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF01M D ( IS=4.42n RS=42.0m BV=100 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF01S;DI_DF01S;Diodes;Si; 100V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF01S D ( IS=4.42n RS=42.0m BV=100 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF02M;DI_DF02M;Diodes;Si; 200V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF02M D ( IS=4.42n RS=42.0m BV=200 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF02S;DI_DF02S;Diodes;Si; 200V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF02S D ( IS=4.42n RS=42.0m BV=200 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF04M;DI_DF04M;Diodes;Si; 400V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF04M D ( IS=4.42n RS=42.0m BV=400 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF04S;DI_DF04S;Diodes;Si; 400V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF04S D ( IS=4.42n RS=42.0m BV=400 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF06M;DI_DF06M;Diodes;Si; 600V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF06M D ( IS=4.42n RS=42.0m BV=600 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF06S;DI_DF06S;Diodes;Si; 600V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF06S D ( IS=4.42n RS=42.0m BV=600 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF08M;DI_DF08M;Diodes;Si; 800V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF08M D ( IS=4.42n RS=42.0m BV=800 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF08S;DI_DF08S;Diodes;Si; 800V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF08S D ( IS=4.42n RS=42.0m BV=800 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF10M;DI_DF10M;Diodes;Si; 1.00kV 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF10M D ( IS=4.42n RS=42.0m BV=1.00k IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF10S;DI_DF10S;Diodes;Si; 1.00kV 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF10S D ( IS=4.42n RS=42.0m BV=1.00k IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF15005S;DI_DF15005S;Diodes;Si; 50.0V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF15005S D ( IS=2.06n RS=28.1m BV=50.0 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF1501S;DI_DF1501S;Diodes;Si; 100V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF1501S D ( IS=2.06n RS=28.1m BV=100 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF1502S;DI_DF1502S;Diodes;Si; 200V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF1502S D ( IS=2.06n RS=28.1m BV=200 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF1504S;DI_DF1504S;Diodes;Si; 400V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF1504S D ( IS=2.06n RS=28.1m BV=400 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF1506S;DI_DF1506S;Diodes;Si; 600V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF1506S D ( IS=2.06n RS=28.1m BV=600 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF1508S;DI_DF1508S;Diodes;Si; 800V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF1508S D ( IS=2.06n RS=28.1m BV=800 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF1510S;DI_DF1510S;Diodes;Si; 1.00kV 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF1510S D ( IS=2.06n RS=28.1m BV=1.00k IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=GBJ15005;DI_GBJ15005;Diodes;Si; 50.0V 15.0A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_GBJ15005 D ( IS=5.11u RS=3.43m BV=50.0 IBV=10.0u + CJO=106p M=0.333 N=2.44 TT=4.32u ) *SRC=GBJ1501;DI_GBJ1501;Diodes;Si; 100V 15.0A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_GBJ1501 D ( IS=5.11u RS=3.43m BV=100 IBV=10.0u + CJO=106p M=0.333 N=2.44 TT=4.32u ) *SRC=GBJ1502;DI_GBJ1502;Diodes;Si; 200V 15.0A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_GBJ1502 D ( IS=5.11u RS=3.43m BV=200 IBV=10.0u + CJO=106p M=0.333 N=2.44 TT=4.32u ) *SRC=GBJ1504;DI_GBJ1504;Diodes;Si; 400V 15.0A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_GBJ1504 D ( IS=5.11u RS=3.43m BV=400 IBV=10.0u + CJO=106p M=0.333 N=2.44 TT=4.32u ) *SRC=GBJ1506;DI_GBJ1506;Diodes;Si; 600V 15.0A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_GBJ1506 D ( IS=5.11u RS=3.43m BV=600 IBV=10.0u + CJO=106p M=0.333 N=2.44 TT=4.32u ) *SRC=GBJ1508;DI_GBJ1508;Diodes;Si; 800V 15.0A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_GBJ1508 D ( IS=5.11u RS=3.43m BV=800 IBV=10.0u + CJO=106p M=0.333 N=2.44 TT=4.32u ) *SRC=GBJ1510;DI_GBJ1510;Diodes;Si; 1.00kV 15.0A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_GBJ1510 D ( IS=5.11u RS=3.43m BV=1.00k IBV=10.0u + CJO=106p M=0.333 N=2.44 TT=4.32u ) *SRC=GBJ20005;DI_GBJ20005;Diodes;Si; 50.0V 20.0A 3.00us Diodes Inc. Bridge Rect. This model covers only one element. There are four elements per pkg. .MODEL DI_GBJ20005 D ( IS=15.1u RS=2.96m BV=50.0 IBV=10.0u + CJO=111p M=0.333 N=2.84 TT=4.32u ) *SRC=GBJ2001;DI_GBJ2001;Diodes;Si; 100V 20.0A 3.00us Diodes Inc. Bridge Rect. This model covers only one element. There are four elements per pkg. .MODEL DI_GBJ2001 D ( IS=15.1u RS=2.96m BV=100 IBV=10.0u + CJO=111p M=0.333 N=2.84 TT=4.32u ) *SRC=GBJ2002;DI_GBJ2002;Diodes;Si; 200V 20.0A 3.00us Diodes Inc. Bridge Rect. This model covers only one element. There are four elements per pkg. .MODEL DI_GBJ2002 D ( IS=15.1u RS=2.96m BV=200 IBV=10.0u + CJO=111p M=0.333 N=2.84 TT=4.32u ) *SRC=GBJ2004;DI_GBJ2004;Diodes;Si; 400V 20.0A 3.00us Diodes Inc. Bridge Rect. This model covers only one element. There are four elements per pkg. .MODEL DI_GBJ2004 D ( IS=15.1u RS=2.96m BV=400 IBV=10.0u + CJO=111p M=0.333 N=2.84 TT=4.32u ) *SRC=GBJ2006;DI_GBJ2006;Diodes;Si; 600V 20.0A 3.00us Diodes Inc. Bridge Rect. This model covers only one element. There are four elements per pkg. .MODEL DI_GBJ2006 D ( IS=15.1u RS=2.96m BV=600 IBV=10.0u + CJO=111p M=0.333 N=2.84 TT=4.32u ) *SRC=GBJ2008;DI_GBJ2008;Diodes;Si; 800V 20.0A 3.00us Diodes Inc. Bridge Rect. This model covers only one element. There are four elements per pkg. .MODEL DI_GBJ2008 D ( IS=15.1u RS=2.96m BV=800 IBV=10.0u + CJO=111p M=0.333 N=2.84 TT=4.32u ) *SRC=GBJ2010;DI_GBJ2010;Diodes;Si; 1.00kV 20.0A 3.00us Diodes Inc. Bridge Rect. This model covers only one element. There are four elements per pkg. .MODEL DI_GBJ2010 D ( IS=15.1u RS=2.96m BV=1.00k IBV=10.0u + CJO=111p M=0.333 N=2.84 TT=4.32u ) *SRC=GBJ2510;DI_GBJ2510;Diodes;Si; 1.00kV 25.0A 3.00us Diodes Inc. Bridge Rectifier--Per Element .MODEL DI_GBJ2510 D ( IS=379n RS=2.84m BV=1.00k IBV=10.0u + CJO=146p M=0.333 N=2.07 TT=4.32u ) *SRC=GBU1002;DI_GBU1002;Diodes;Si; 200V 10.0A 3.00us Diodes Inc. Bridge Rectifier -- Per Element .MODEL DI_GBU1002 D ( IS=1.71f RS=7.00m BV=200 IBV=5.00u + CJO=133p M=0.333 N=0.900 TT=4.32u ) *SRC=GBU4005;DI_GBU4005;Diodes;Si; 50.0V 4.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU4005 D ( IS=23.3n RS=7.20m BV=50.0 IBV=5.00u + CJO=148p M=0.333 N=1.80 TT=4.32u ) *SRC=GBU401;DI_GBU401;Diodes;Si; 100V 4.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU401 D ( IS=23.3n RS=7.20m BV=100 IBV=5.00u + CJO=148p M=0.333 N=1.80 TT=4.32u ) *SRC=GBU402;DI_GBU402;Diodes;Si; 200V 4.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU402 D ( IS=23.3n RS=7.20m BV=200 IBV=5.00u + CJO=148p M=0.333 N=1.80 TT=4.32u ) *SRC=GBU404;DI_GBU404;Diodes;Si; 400V 4.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU404 D ( IS=23.3n RS=7.20m BV=400 IBV=5.00u + CJO=148p M=0.333 N=1.80 TT=4.32u ) *SRC=GBU406;DI_GBU406;Diodes;Si; 600V 4.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU406 D ( IS=23.3n RS=7.20m BV=600 IBV=5.00u + CJO=148p M=0.333 N=1.80 TT=4.32u ) *SRC=GBU408;DI_GBU408;Diodes;Si; 800V 4.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU408 D ( IS=23.3n RS=7.20m BV=800 IBV=5.00u + CJO=148p M=0.333 N=1.80 TT=4.32u ) *SRC=GBU410;DI_GBU410;Diodes;Si; 1.00kV 4.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU410 D ( IS=23.3n RS=7.20m BV=1.00k IBV=5.00u + CJO=148p M=0.333 N=1.80 TT=4.32u ) *SRC=GBU8005;DI_GBU8005;Diodes;Si; 50.0V 8.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU8005 D ( IS=17.8p RS=7.59m BV=50.0 IBV=5.00u + CJO=240p M=0.333 N=1.25 TT=4.32u ) *SRC=GBU801;DI_GBU801;Diodes;Si; 100V 8.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU801 D ( IS=17.8p RS=7.59m BV=100 IBV=5.00u + CJO=240p M=0.333 N=1.25 TT=4.32u ) *SRC=GBU802;DI_GBU802;Diodes;Si; 200V 8.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU802 D ( IS=17.8p RS=7.59m BV=200 IBV=5.00u + CJO=240p M=0.333 N=1.25 TT=4.32u ) *SRC=GBU804;DI_GBU804;Diodes;Si; 400V 8.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU804 D ( IS=17.8p RS=7.59m BV=400 IBV=5.00u + CJO=240p M=0.333 N=1.25 TT=4.32u ) *SRC=GBU806;DI_GBU806;Diodes;Si; 600V 8.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU806 D ( IS=17.8p RS=7.59m BV=600 IBV=5.00u + CJO=240p M=0.333 N=1.25 TT=4.32u ) *SRC=GBU808;DI_GBU808;Diodes;Si; 800V 8.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU808 D ( IS=17.8p RS=7.59m BV=800 IBV=5.00u + CJO=240p M=0.333 N=1.25 TT=4.32u ) *SRC=GBU810;DI_GBU810;Diodes;Si; 1.00kV 8.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU810 D ( IS=17.8p RS=7.59m BV=1.00k IBV=5.00u + CJO=240p M=0.333 N=1.25 TT=4.32u ) *SRC=HD01;DI_HD01;Diodes;Si; 100V 0.800A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_HD01 D ( IS=3.47n RS=42.6m BV=100 IBV=5.00u + CJO=25.2p M=0.333 N=1.70 TT=4.32u ) *SRC=HD02;DI_HD02;Diodes;Si; 200V 0.800A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_HD02 D ( IS=3.47n RS=42.6m BV=200 IBV=5.00u + CJO=25.2p M=0.333 N=1.70 TT=4.32u ) *SRC=HD04;DI_HD04;Diodes;Si; 400V 0.800A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_HD04 D ( IS=3.47n RS=42.6m BV=400 IBV=5.00u + CJO=25.2p M=0.333 N=1.70 TT=4.32u ) *SRC=HD06;DI_HD06;Diodes;Si; 600V 0.800A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_HD06 D ( IS=3.47n RS=42.6m BV=600 IBV=5.00u + CJO=25.2p M=0.333 N=1.70 TT=4.32u ) *SRC=KBJ4005G;DI_KBJ4005G;Diodes;Si; 50.0V 4.00A 3.00us Diodes Inc. Bridge Rectifier - Per Diode .MODEL DI_KBJ4005G D ( IS=656n RS=10.5m BV=50.0 IBV=10.0u + CJO=79.6p M=0.333 N=2.45 TT=4.32u ) *SRC=KBJ401G;DI_KBJ401G;Diodes;Si; 100V 4.00A 3.00us Diodes Inc. Bridge Rectifier - Per Diode .MODEL DI_KBJ401G D ( IS=656n RS=10.5m BV=100 IBV=10.0u + CJO=79.6p M=0.333 N=2.45 TT=4.32u ) *SRC=KBJ402G;DI_KBJ402G;Diodes;Si; 200V 4.00A 3.00us Diodes Inc. Bridge Rectifier - Per Diode .MODEL DI_KBJ402G D ( IS=656n RS=10.5m BV=200 IBV=10.0u + CJO=79.6p M=0.333 N=2.45 TT=4.32u ) *SRC=KBJ404G;DI_KBJ404G;Diodes;Si; 400V 4.00A 3.00us Diodes Inc. Bridge Rectifier - Per Diode .MODEL DI_KBJ404G D ( IS=656n RS=10.5m BV=400 IBV=10.0u + CJO=79.6p M=0.333 N=2.45 TT=4.32u ) *SRC=KBJ406G;DI_KBJ406G;Diodes;Si; 600V 4.00A 3.00us Diodes Inc. Bridge Rectifier - Per Diode .MODEL DI_KBJ406G D ( IS=656n RS=10.5m BV=600 IBV=10.0u + CJO=79.6p M=0.333 N=2.45 TT=4.32u ) *SRC=KBJ408G;DI_KBJ408G;Diodes;Si; 800V 4.00A 3.00us Diodes Inc. Bridge Rectifier - Per Diode .MODEL DI_KBJ408G D ( IS=656n RS=10.5m BV=800 IBV=10.0u + CJO=79.6p M=0.333 N=2.45 TT=4.32u ) *SRC=KBJ410G;DI_KBJ410G;Diodes;Si; 1.00kV 4.00A 3.00us Diodes Inc. Bridge Rectifier - Per Diode .MODEL DI_KBJ410G D ( IS=656n RS=10.5m BV=1.00k IBV=10.0u + CJO=79.6p M=0.333 N=2.45 TT=4.32u ) *SRC=KBP01G;DI_KBP01G;Diodes;Si; 100V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP01G D ( IS=39.2u RS=28.1m BV=100 IBV=5.00u + CJO=26.5p M=0.333 N=4.38 TT=4.32u ) *SRC=KBP02G;DI_KBP02G;Diodes;Si; 200V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP02G D ( IS=39.2u RS=28.1m BV=200 IBV=5.00u + CJO=26.5p M=0.333 N=4.38 TT=4.32u ) *SRC=KBP04G;DI_KBP04G;Diodes;Si; 400V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP04G D ( IS=39.2u RS=28.1m BV=400 IBV=5.00u + CJO=26.5p M=0.333 N=4.38 TT=4.32u ) *SRC=KBP06G;DI_KBP06G;Diodes;Si; 600V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP06G D ( IS=39.2u RS=28.1m BV=600 IBV=5.00u + CJO=26.5p M=0.333 N=4.38 TT=4.32u ) *SRC=KBP08G;DI_KBP08G;Diodes;Si; 800V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP08G D ( IS=39.2u RS=28.1m BV=800 IBV=5.00u + CJO=26.5p M=0.333 N=4.38 TT=4.32u ) *SRC=KBP10G;DI_KBP10G;Diodes;Si; 1.00kV 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP10G D ( IS=39.2u RS=28.1m BV=1.00k IBV=5.00u + CJO=26.5p M=0.333 N=4.38 TT=4.32u ) *SRC=KBP2005G;DI_KBP2005G;Diodes;Si; 50.0V 2.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP2005G D ( IS=143n RS=21.1m BV=50.0 IBV=5.00u + CJO=46.2p M=0.333 N=2.12 TT=4.32u ) *SRC=KBP201G;DI_KBP201G;Diodes;Si; 100V 2.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP201G D ( IS=143n RS=21.1m BV=100 IBV=5.00u + CJO=46.2p M=0.333 N=2.12 TT=4.32u ) *SRC=KBP202G;DI_KBP202G;Diodes;Si; 200V 2.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP202G D ( IS=143n RS=21.1m BV=200 IBV=5.00u + CJO=46.2p M=0.333 N=2.12 TT=4.32u ) *SRC=KBP204G;DI_KBP204G;Diodes;Si; 400V 2.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP204G D ( IS=143n RS=21.1m BV=400 IBV=5.00u + CJO=46.2p M=0.333 N=2.12 TT=4.32u ) *SRC=KBP206G;DI_KBP206G;Diodes;Si; 600V 2.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP206G D ( IS=143n RS=21.1m BV=600 IBV=5.00u + CJO=46.2p M=0.333 N=2.12 TT=4.32u ) *SRC=KBP208G;DI_KBP208G;Diodes;Si; 800V 2.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP208G D ( IS=143n RS=21.1m BV=800 IBV=5.00u + CJO=46.2p M=0.333 N=2.12 TT=4.32u ) *SRC=KBP210G;DI_KBP210G;Diodes;Si; 1.00kV 2.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP210G D ( IS=143n RS=21.1m BV=1.00k IBV=5.00u + CJO=46.2p M=0.333 N=2.12 TT=4.32u ) *SRC=RH02;DI_RH02;Diodes;Si; 200V 0.500A 150ns Diodes Inc. Fast Recovery Bridge Rectifier, per node .MODEL DI_RH02 D ( IS=2.25n RS=0.100 BV=200 IBV=5.00u + CJO=24.0p M=0.333 N=1.70 TT=216n ) *SRC=RH04;DI_RH04;Diodes;Si; 400V 0.500A 150ns Diodes Inc. Fast Recovery Bridge Rectifier, per node .MODEL DI_RH04 D ( IS=2.25n RS=0.100 BV=400 IBV=5.00u + CJO=24.0p M=0.333 N=1.70 TT=216n ) *SRC=RH06;DI_RH06;Diodes;Si; 600V 0.500A 250ns Diodes Inc. Fast Recovery Bridge Rectifier, per node .MODEL DI_RH06 D ( IS=2.25n RS=0.100 BV=600 IBV=5.00u + CJO=24.0p M=0.333 N=1.70 TT=360n ) *SRC=KBP005G;DI_KBP005G;Diodes;Si; 50.0V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP005G D ( IS=39.2u RS=28.1m BV=50.0 IBV=5.00u + CJO=26.5p M=0.333 N=4.38 TT=4.32u ) *SRC=DLPA006;DI_DLPA006;Diodes;Si; 85.0V 0.160A 3.00us Diodes, Inc. Switching - one element of DLPA006 array .MODEL DI_DLPA006 D ( IS=59.0p RS=0.262 BV=85.0 IBV=5.00n + CJO=2.00p M=0.333 N=1.78 TT=4.32u ) *SRC=MSB15MH; DI_MSB15MH; Diodes Inc.; Si; 1000V 1.50A Diodes Bridge -- for one element .MODEL DI_MSB15MH D ( IS=1.14457E-09 RS=19m BV=1000 IBV=5.00u + CJO=43.5p M=0.333 N=1.7 TT=4.32u ) *SRC=MSB25MH; DI_MSB25MH; Diodes Inc.; Si; 1000V 2.50A Diodes Bridge -- for one element .MODEL DI_MSB25MH D ( IS=2.3E-10 RS=11.56m BV=1000 IBV=5.00u + CJO=52.5p M=0.333 N=1.7 TT=4.32u ) *SRC=1N4934;DI_1N4934;Diodes;Si; 100V 1.00A 200ns Diodes Inc. Fast Rectifier .MODEL DI_1N4934 D ( IS=830n RS=34.0m BV=100 IBV=5.00u + CJO=26.5p M=0.333 N=2.46 TT=288n ) *SRC=1N4935;DI_1N4935;Diodes;Si; 200V 1.00A 200ns Diodes Inc. Fast Rectifier .MODEL DI_1N4935 D ( IS=830n RS=34.0m BV=200 IBV=5.00u + CJO=26.5p M=0.333 N=2.46 TT=288n ) *SRC=1N4936;DI_1N4936;Diodes;Si; 400V 1.00A 200ns Diodes Inc. Fast Rectifier .MODEL DI_1N4936 D ( IS=830n RS=34.0m BV=400 IBV=5.00u + CJO=26.5p M=0.333 N=2.46 TT=288n ) *SRC=1N4937;DI_1N4937;Diodes;Si; 600V 1.00A 200ns Diodes Inc. Fast Rectifier .MODEL DI_1N4937 D ( IS=830n RS=34.0m BV=600 IBV=5.00u + CJO=26.5p M=0.333 N=2.46 TT=288n ) * DFLU1400 SPICE model * * THIS MODEL IS A SPICE SUBCIRCUIT. * ANY NETLIST USING IT MUST INCLUDE * A STATEMENT WITH THE FOLLOWING SYNTAX * * X1 DFLU1400 A C * * SUBCIRCUIT NODE 1 -> ANODE * SUBCIRCUIT NODE 2 -> CATHODE * .SUBCKT DFLU1400 1 2 D1 1 2 DFLU1400_1 D2 1 2 DFLU1400_2 * .MODEL DFLU1400_1 D ( +LEVEL = 1 IS = 8.97113e-10 RS = 0.218519 +N = 1.00753 BV = 400 IBV = 5e-06 +CJO = 1.7785e-11 VJ = 0.468489 MJ = 0.395956 +FC = 0.5 XTI = 2.98187 EG = 1.19064 +TT = 33e-9 IKF = 6.06945e-06 TRS1 = -0.00446639 +TRS2 = 9.32759e-06 ) * .MODEL DFLU1400_2 D ( +LEVEL = 1 IS = 1.05089e-12 RS = 0.146586 +N = 1.16507 BV = 1E5 IBV = 1e-06 +CJO = 1.7785e-11 VJ = 0.468489 MJ = 0.395956 +FC = 0.5 XTI = 3.14412 EG = 1.05458 +TRS1 = 0.000149447 TRS2 = 2.90699e-05 IKF = 9.9308e-06 +TT = 33e-9 ) * .ENDS DFLU1400 *SRC=ES1A;DI_ES1A;Diodes;Si; 50.0V 1.00A 20.0ns Diodes Inc. .MODEL DI_ES1A D ( IS=123n RS=42.0m BV=50.0 IBV=5.00u + CJO=18.5p M=0.333 N=2.12 TT=28.8n ) *SRC=ES1B;DI_ES1B;Diodes;Si; 100V 1.00A 20.0ns Diodes Inc. .MODEL DI_ES1B D ( IS=123n RS=42.0m BV=100 IBV=5.00u + CJO=18.5p M=0.333 N=2.12 TT=28.8n ) *SRC=ES1C;DI_ES1C;Diodes;Si; 150V 1.00A 20.0ns Diodes Inc. .MODEL DI_ES1C D ( IS=123n RS=42.0m BV=150 IBV=5.00u + CJO=18.5p M=0.333 N=2.12 TT=28.8n ) *SRC=ES1D;DI_ES1D;Diodes;Si; 200V 1.00A 20.0ns Diodes Inc. .MODEL DI_ES1D D ( IS=123n RS=42.0m BV=200 IBV=5.00u + CJO=18.5p M=0.333 N=2.12 TT=28.8n ) *SRC=ES1G;DI_ES1G;Diodes;Si; 400V 1.00A 20.0ns Diodes Inc. .MODEL DI_ES1G D ( IS=373n RS=64.3m BV=400 IBV=5.00u + CJO=18.5p M=0.333 N=2.84 TT=28.8n ) *SRC=ES2A;DI_ES2A;Diodes;Si; 50.0V 2.00A 25.0ns Diodes Inc. Fast Rectifier .MODEL DI_ES2A D ( IS=267n RS=21.0m BV=50.0 IBV=5.00u + CJO=83.5p M=0.333 N=1.70 TT=36.0n ) ***************************************************************************************** *SRC=ES2AA;DI_ES2AA;Diodes;Si; 50.0V 2.00A 25.0ns Diodes Inc. Fast Rectifier .MODEL DI_ES2AA D ( IS=267n RS=21.0m BV=50.0 IBV=5.00u + CJO=83.5p M=0.333 N=1.70 TT=36.0n ) **************************************************************************************** *SRC=ES2B;DI_ES2B;Diodes;Si; 100V 2.00A 25.0ns Diodes Inc. Fast Rectifier .MODEL DI_ES2B D ( IS=267n RS=21.0m BV=100 IBV=5.00u + CJO=83.5p M=0.333 N=1.70 TT=36.0n ) **************************************************************************************** SRC=ES2BA;DI_ES2BA;Diodes;Si; 100V 2.00A 25.0ns Diodes Inc. Fast Rectifier .MODEL DI_ES2BA D ( IS=267n RS=21.0m BV=100 IBV=5.00u + CJO=83.5p M=0.333 N=1.70 TT=36.0n ) *************************************************************************************** *SRC=ES2C;DI_ES2C;Diodes;Si; 150V 2.00A 25.0ns Diodes Inc. Fast Rectifier .MODEL DI_ES2C D ( IS=267n RS=21.0m BV=150 IBV=5.00u + CJO=83.5p M=0.333 N=1.70 TT=36.0n ) *************************************************************************************** *SRC=ES2CA;DI_ES2CA;Diodes;Si; 150V 2.00A 25.0ns Diodes Inc. Fast Rectifier .MODEL DI_ES2CA D ( IS=267n RS=21.0m BV=150 IBV=5.00u + CJO=83.5p M=0.333 N=1.70 TT=36.0n ) ***************************************************************************************** *SRC=ES2D;DI_ES2D;Diodes;Si; 200V 2.00A 25.0ns Diodes Inc. Fast Rectifier .MODEL DI_ES2D D ( IS=267n RS=21.0m BV=200 IBV=5.00u + CJO=83.5p M=0.333 N=1.70 TT=36.0n ) ***************************************************************************************** *SRC=ES2DA;DI_ES2DA;Diodes;Si; 200V 2.00A 25.0ns Diodes Inc. Fast Rectifier .MODEL DI_ES2DA D ( IS=267n RS=21.0m BV=200 IBV=5.00u + CJO=83.5p M=0.333 N=1.70 TT=36.0n ) ***************************************************************************************** *SRC=ES2G;DI_ES2G;Diodes;Si; 400V 2.00A 25.0ns Diodes Inc. Fast Rectifier .MODEL DI_ES2G D ( IS=3.92n RS=21.0m BV=400 IBV=5.00u + CJO=83.5p M=0.333 N=1.95 TT=36.0n ) *SRC=ES3A;DI_ES3A;Diodes;Si; 50.0V 3.00A 25.0ns Diodes Inc. .MODEL DI_ES3A D ( IS=7.27p RS=22.4m BV=50.0 IBV=10.0u + CJO=83.2p M=0.333 N=0.700 TT=36.0n ) *SRC=ES3AB;DI_ES3AB;Diodes;Si; 50.0V 3.00A 25.0ns Diodes Inc. .MODEL DI_ES3AB D ( IS=7.27p RS=22.4m BV=50.0 IBV=10.0u + CJO=83.2p M=0.333 N=0.700 TT=36.0n ) *SRC=ES3B;DI_ES3B;Diodes;Si; 100V 3.00A 25.0ns Diodes Inc. .MODEL DI_ES3B D ( IS=7.27p RS=22.4m BV=100 IBV=10.0u + CJO=83.2p M=0.333 N=0.700 TT=36.0n ) *SRC=ES3BB;DI_ES3BB;Diodes;Si; 100V 3.00A 25.0ns Diodes Inc. .MODEL DI_ES3BB D ( IS=7.27p RS=22.4m BV=100 IBV=10.0u + CJO=83.2p M=0.333 N=0.700 TT=36.0n ) *SRC=ES3C;DI_ES3C;Diodes;Si; 150V 3.00A 25.0ns Diodes Inc. .MODEL DI_ES3C D ( IS=7.27p RS=22.4m BV=150 IBV=10.0u + CJO=83.2p M=0.333 N=0.700 TT=36.0n ) *SRC=ES3CB;DI_ES3CB;Diodes;Si; 150V 3.00A 25.0ns Diodes Inc. .MODEL DI_ES3CB D ( IS=7.27p RS=22.4m BV=150 IBV=10.0u + CJO=83.2p M=0.333 N=0.700 TT=36.0n ) *SRC=ES3D;DI_ES3D;Diodes;Si; 200V 3.00A 25.0ns Diodes Inc. .MODEL DI_ES3D D ( IS=7.27p RS=22.4m BV=200 IBV=10.0u + CJO=83.2p M=0.333 N=0.700 TT=36.0n ) *SRC=ES3DB;DI_ES3DB;Diodes;Si; 200V 3.00A 25.0ns Diodes Inc. .MODEL DI_ES3DB D ( IS=7.27p RS=22.4m BV=200 IBV=10.0u + CJO=83.2p M=0.333 N=0.700 TT=36.0n ) *SRC=MUR120;DI_MUR120;Diodes;Si; 200V 1.00A 25.0ns Diodes Inc. Super Fast Rectifier .MODEL DI_MUR120 D ( IS=7.06e-017 RS=73.4m BV=200 IBV=2.00u + CJO=49.9p M=0.333 N=0.700 TT=36.0n ) *SRC=MURS120;DI_MURS120;Diodes;Si; 200V 1.00A 25.0ns Diodes Inc. Super Fast Rectifier .MODEL DI_MURS120 D ( IS=17.1n RS=20.6m BV=200 IBV=2.00u + CJO=60.0p M=0.333 N=1.73 TT=36.0n ) ************************************************************************************************************************************ *SRC=MURS140;DI_MURS140;Diodes;Si; 400V 1.00A 50.0ns Diodes Inc. Super Fast Rectifier .MODEL DI_MURS140 D ( IS=17.1n RS=20.6m BV=400 IBV=2.00u + CJO=45.0p M=0.333 N=1.73 TT=72.0n ) *********************************************************************************************************************************** *SRC=MURS160;DI_MURS160;Diodes;Si; 600V 1.00A 50.0ns Diodes Inc. Super Fast Rectifier .MODEL DI_MURS160 D ( IS=17.1n RS=20.6m BV=600 IBV=2.00u + CJO=45.0p M=0.333 N=1.73 TT=72.0n ) *********************************************************************************************************************************** *SRC=MURS320;DI_MURS320;Diodes;Si; 200V 3.00A 25.0ns Diodes Inc. Super Fast Rectifier .MODEL DI_MURS320 D ( IS=11.8n RS=7.89m BV=200 IBV=5.00u + CJO=45.0p M=0.333 N=1.56 TT=36.0n ) *********************************************************************************************************************************** *SRC=PDU340;DI_PDU340;Diodes;Si; 400V 3.00A 50.0ns Diodes Inc. Ultrafast Rectifier .MODEL DI_PDU340 D ( IS=3.74u RS=25.9m BV=400 IBV=10.0u + CJO=86.2p M=0.333 N=2.58 TT=72.0n ) *SRC=PDU420;DI_PDU420;Diodes;Si; 400V 4.00A 25.0ns Diodes Inc. ultrafast rectifier .MODEL DI_PDU420 D ( IS=189n RS=10.5m BV=400 IBV=5.00u + CJO=276p M=0.333 N=1.73 TT=36.0n ) *SRC=PDU540;DI_PDU540;Diodes;Si; 400V 5.00A 35.0ns Diodes Inc. Ultrafast Rectifier .MODEL DI_PDU540 D ( IS=2.68u RS=8.33m BV=400 IBV=10.0u + CJO=196p M=0.333 N=2.27 TT=50.4n ) *SRC=PDU620;DI_PDU620;Diodes;Si; 200V 6.00A 25.0ns Diodes Inc. Ultrafast Rectifier .MODEL DI_PDU620 D ( IS=190n RS=9.91m BV=200 IBV=5.00u + CJO=402p M=0.333 N=1.69 TT=36.0n ) *SRC=PDU620CT;DI_PDU620CT;Diodes;Si; 200V 3.00A 25.0ns Diodes Inc. Ultrafast Rectifier .MODEL DI_PDU620CT D ( IS=7.48n RS=19.5m BV=200 IBV=5.00u + CJO=223p M=0.333 N=1.42 TT=36.0n ) *SRC=PR1001G;DI_PR1001G;Diodes;Si; 50.0V 1.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_PR1001G D ( IS=5.00n RS=29.8m BV=50.0 IBV=5.00u + CJO=27.8p M=0.333 N=1.72 TT=216n ) *SRC=PR1002G;DI_PR1002G;Diodes;Si; 100V 1.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_PR1002G D ( IS=5.00n RS=29.8m BV=100 IBV=5.00u + CJO=27.8p M=0.333 N=1.72 TT=216n ) *SRC=PR1003G;DI_PR1003G;Diodes;Si; 200V 1.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_PR1003G D ( IS=5.00n RS=29.8m BV=200 IBV=5.00u + CJO=27.8p M=0.333 N=1.72 TT=216n ) *SRC=PR1004G;DI_PR1004G;Diodes;Si; 400V 1.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_PR1004G D ( IS=5.00n RS=29.8m BV=400 IBV=5.00u + CJO=27.8p M=0.333 N=1.72 TT=216n ) *SRC=PR1005G;DI_PR1005G;Diodes;Si; 600V 1.00A 250ns Diodes Inc. Fast Rectifier .MODEL DI_PR1005G D ( IS=5.00n RS=29.8m BV=600 IBV=5.00u + CJO=19.9p M=0.333 N=1.72 TT=360n ) *SRC=PR1006G;DI_PR1006G;Diodes;Si; 800V 1.00A 500ns Diodes Inc. Fast Rectifier .MODEL DI_PR1006G D ( IS=5.00n RS=29.8m BV=800 IBV=5.00u + CJO=19.9p M=0.333 N=1.72 TT=720n ) *SRC=PR1007G;DI_PR1007G;Diodes;Si; 1.00kV 1.00A 500ns Diodes Inc. Fast Rectifier .MODEL DI_PR1007G D ( IS=5.00n RS=29.8m BV=1.00k IBV=5.00u + CJO=19.9p M=0.333 N=1.72 TT=720n ) *SRC=PR6001;DI_PR6001;Diodes;Si; 50.0V 6.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_PR6001 D ( IS=863n RS=12.6m BV=50.0 IBV=10.0u + CJO=663p M=0.333 N=1.70 TT=216n ) *SRC=RS1A;DI_RS1A;Diodes;Si; 50.0V 1.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS1A D ( IS=948n RS=81.3m BV=50.0 IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=216n ) ************************************************************************************************************************************* *SRC=RS1AB;DI_RS1AB;Diodes;Si; 50.0V 1.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS1AB D ( IS=948n RS=81.3m BV=50.0 IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=216n ) ************************************************************************************************************************************* *SRC=RS1B;DI_RS1B;Diodes;Si; 100V 1.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS1B D ( IS=948n RS=81.3m BV=100 IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=216n ) ************************************************************************************************************************************** *SRC=RS1BB;DI_RS1BB;Diodes;Si; 100V 1.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS1BB D ( IS=948n RS=81.3m BV=100 IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=216n ) ************************************************************************************************************************************** *SRC=RS1D;DI_RS1D;Diodes;Si; 200V 1.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS1D D ( IS=948n RS=81.3m BV=200 IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=216n ) ************************************************************************************************************************************** *SRC=RS1DB;DI_RS1DB;Diodes;Si; 200V 1.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS1DB D ( IS=948n RS=81.3m BV=200 IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=216n ) ************************************************************************************************************************************** *SRC=RS1G;DI_RS1G;Diodes;Si; 400V 1.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS1G D ( IS=948n RS=81.3m BV=400 IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=216n ) ************************************************************************************************************************************** *SRC=RS1GB;DI_RS1GB;Diodes;Si; 400V 1.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS1GB D ( IS=948n RS=81.3m BV=400 IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=216n ) ************************************************************************************************************************************** *SRC=RS1J;DI_RS1J;Diodes;Si; 600V 1.00A 250ns Diodes Inc. Fast Rectifier .MODEL DI_RS1J D ( IS=948n RS=81.3m BV=600 IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=360n ) ************************************************************************************************************************************** *SRC=RS1JB;DI_RS1JB;Diodes;Si; 600V 1.00A 250ns Diodes Inc. Fast Rectifier .MODEL DI_RS1JB D ( IS=948n RS=81.3m BV=600 IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=360n ) ************************************************************************************************************************************** *SRC=RS1K;DI_RS1K;Diodes;Si; 800V 1.00A 500ns Diodes Inc. Fast Rectifier .MODEL DI_RS1K D ( IS=948n RS=81.3m BV=800 IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=720n ) ************************************************************************************************************************************** *SRC=RS1KB;DI_RS1KB;Diodes;Si; 800V 1.00A 500ns Diodes Inc. Fast Rectifier .MODEL DI_RS1KB D ( IS=948n RS=81.3m BV=800 IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=720n ) ************************************************************************************************************************************** *SRC=RS1M;DI_RS1M;Diodes;Si; 1.00kV 1.00A 500ns Diodes Inc. Fast Rectifier .MODEL DI_RS1M D ( IS=948n RS=81.3m BV=1.00k IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=720n ) ************************************************************************************************************************************** *SRC=RS1MB;DI_RS1MB;Diodes;Si; 1.00kV 1.00A 500ns Diodes Inc. Fast Rectifier .MODEL DI_RS1MB D ( IS=948n RS=81.3m BV=1.00k IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=720n ) ************************************************************************************************************************************** *SRC=RS2A;DI_RS2A;Diodes;Si; 50.0V 1.50A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS2A D ( IS=169u RS=4.81m BV=50.0 IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=216n ) ****************************************************************************************************** *SRC=RS2AA;DI_RS2AA;Diodes;Si; 50.0V 1.50A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS2AA D ( IS=169u RS=4.81m BV=50.0 IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=216n ) ****************************************************************************************************** *SRC=RS2B;DI_RS2B;Diodes;Si; 100V 1.50A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS2B D ( IS=169u RS=4.81m BV=100 IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=216n ) ****************************************************************************************************** *SRC=RS2BA;DI_RS2BA;Diodes;Si; 100V 1.50A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS2BA D ( IS=169u RS=4.81m BV=100 IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=216n ) ****************************************************************************************************** *SRC=RS2D;DI_RS2D;Diodes;Si; 200V 1.50A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS2D D ( IS=169u RS=4.81m BV=200 IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=216n ) ****************************************************************************************************** *SRC=RS2DA;DI_RS2DA;Diodes;Si; 200V 1.50A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS2DA D ( IS=169u RS=4.81m BV=200 IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=216n ) ****************************************************************************************************** *SRC=RS2G;DI_RS2G;Diodes;Si; 400V 1.50A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS2G D ( IS=169u RS=4.81m BV=400 IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=216n ) ****************************************************************************************************** *SRC=RS2GA;DI_RS2GA;Diodes;Si; 400V 1.50A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS2GA D ( IS=169u RS=4.81m BV=400 IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=216n ) ****************************************************************************************************** *SRC=RS2J;DI_RS2J;Diodes;Si; 600V 1.50A 250ns Diodes Inc. Fast Rectifier .MODEL DI_RS2J D ( IS=169u RS=4.81m BV=600 IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=360n ) ****************************************************************************************************** *SRC=RS2JA;DI_RS2JA;Diodes;Si; 600V 1.50A 250ns Diodes Inc. Fast Rectifier .MODEL DI_RS2JA D ( IS=169u RS=4.81m BV=600 IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=360n ) ****************************************************************************************************** *SRC=RS2K;DI_RS2K;Diodes;Si; 800V 1.50A 500ns Diodes Inc. Fast Rectifier .MODEL DI_RS2K D ( IS=169u RS=4.81m BV=800 IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=720n ) ****************************************************************************************************** *SRC=RS2KA;DI_RS2KA;Diodes;Si; 800V 1.50A 500ns Diodes Inc. Fast Rectifier .MODEL DI_RS2KA D ( IS=169u RS=4.81m BV=800 IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=720n ) ****************************************************************************************************** *SRC=RS2M;DI_RS2M;Diodes;Si; 1.00kV 1.50A 500ns Diodes Inc. Fast Rectifier .MODEL DI_RS2M D ( IS=169u RS=4.81m BV=1.00k IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=720n ) ****************************************************************************************************** *SRC=RS2MA;DI_RS2MA;Diodes;Si; 1.00kV 1.50A 500ns Diodes Inc. Fast Rectifier .MODEL DI_RS2MA D ( IS=169u RS=4.81m BV=1.00k IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=720n ) ****************************************************************************************************** *SRC=RS3A;DI_RS3A;Diodes;Si; 50.0V 3.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS3A D ( IS=200n RS=25.4m BV=50.0 IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=216n ) ********************************************************************************************************** *SRC=RS3AB;DI_RS3AB;Diodes;Si; 50.0V 3.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS3AB D ( IS=200n RS=25.4m BV=50.0 IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=216n ) ********************************************************************************************************** *SRC=RS3B;DI_RS3B;Diodes;Si; 100V 3.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS3B D ( IS=200n RS=25.4m BV=100 IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=216n ) ********************************************************************************************************** *SRC=RS3BB;DI_RS3BB;Diodes;Si; 100V 3.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS3BB D ( IS=200n RS=25.4m BV=100 IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=216n ) ********************************************************************************************************** *SRC=RS3D;DI_RS3D;Diodes;Si; 200V 3.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS3D D ( IS=200n RS=25.4m BV=200 IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=216n ) ********************************************************************************************************** *SRC=RS3DB;DI_RS3DB;Diodes;Si; 200V 3.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS3DB D ( IS=200n RS=25.4m BV=200 IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=216n ) ********************************************************************************************************** *SRC=RS3G;DI_RS3G;Diodes;Si; 400V 3.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS3G D ( IS=200n RS=25.4m BV=400 IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=216n ) ********************************************************************************************************** *SRC=RS3GB;DI_RS3GB;Diodes;Si; 400V 3.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS3GB D ( IS=200n RS=25.4m BV=400 IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=216n ) ********************************************************************************************************** *SRC=RS3J;DI_RS3J;Diodes;Si; 600V 3.00A 250ns Diodes Inc. Fast Rectifier .MODEL DI_RS3J D ( IS=200n RS=25.4m BV=600 IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=360n ) ********************************************************************************************************** *SRC=RS3JB;DI_RS3JB;Diodes;Si; 600V 3.00A 250ns Diodes Inc. Fast Rectifier .MODEL DI_RS3JB D ( IS=200n RS=25.4m BV=600 IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=360n ) ********************************************************************************************************** *SRC=RS3K;DI_RS3K;Diodes;Si; 800V 3.00A 500ns Diodes Inc. Fast Rectifier .MODEL DI_RS3K D ( IS=200n RS=25.4m BV=800 IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=720n ) *********************************************************************************************************** *SRC=RS3KB;DI_RS3KB;Diodes;Si; 800V 3.00A 500ns Diodes Inc. Fast Rectifier .MODEL DI_RS3KB D ( IS=200n RS=25.4m BV=800 IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=720n ) *********************************************************************************************************** *SRC=RS3M;DI_RS3M;Diodes;Si; 1.00kV 3.00A 500ns Diodes Inc. Fast Rectifier .MODEL DI_RS3M D ( IS=200n RS=25.4m BV=1.00k IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=720n ) *********************************************************************************************************** *SRC=RS3MB;DI_RS3MB;Diodes;Si; 1.00kV 3.00A 500ns Diodes Inc. Fast Rectifier .MODEL DI_RS3MB D ( IS=200n RS=25.4m BV=1.00k IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=720n ) *********************************************************************************************************** *SRC=SF10AG;DI_SF10AG;Diodes;Si; 50.0V 1.00A 35.0ns Diodes Inc. .MODEL DI_SF10AG D ( IS=1.42n RS=42.0m BV=50.0 IBV=10.0u + CJO=139p M=0.333 N=1.70 TT=50.4n ) *SRC=SF10BG;DI_SF10BG;Diodes;Si; 100V 1.00A 35.0ns Diodes Inc. .MODEL DI_SF10BG D ( IS=1.42n RS=42.0m BV=100 IBV=10.0u + CJO=139p M=0.333 N=1.70 TT=50.4n ) *SRC=SF10CG;DI_SF10CG;Diodes;Si; 150V 1.00A 35.0ns Diodes Inc. .MODEL DI_SF10CG D ( IS=1.42n RS=42.0m BV=150 IBV=10.0u + CJO=139p M=0.333 N=1.70 TT=50.4n ) *SRC=SF10DG;DI_SF10DG;Diodes;Si; 200V 1.00A 35.0ns Diodes Inc. .MODEL DI_SF10DG D ( IS=1.42n RS=42.0m BV=200 IBV=10.0u + CJO=139p M=0.333 N=1.70 TT=50.4n ) *SRC=SF10FG;DI_SF10FG;Diodes;Si; 300V 1.00A 40.0ns Diodes Inc. - .MODEL DI_SF10FG D ( IS=50.9p RS=75.5m BV=300 IBV=10.0u + CJO=139p M=0.333 N=1.70 TT=57.6n ) *SRC=SF10GG;DI_SF10GG;Diodes;Si; 400V 1.00A 40.0ns Diodes Inc. - .MODEL DI_SF10GG D ( IS=50.9p RS=75.5m BV=400 IBV=10.0u + CJO=139p M=0.333 N=1.70 TT=57.6n ) *SRC=SF10HG;DI_SF10HG;Diodes;Si; 500V 1.00A 50.0ns Diodes Inc. - .MODEL DI_SF10HG D ( IS=13.5u RS=30.9m BV=500 IBV=10.0u + CJO=92.5p M=0.333 N=5.40 TT=72.0n ) *SRC=SF10JG;DI_SF10JG;Diodes;Si; 600V 1.00A 50.0ns Diodes Inc. - .MODEL DI_SF10JG D ( IS=13.5u RS=30.9m BV=600 IBV=10.0u + CJO=92.5p M=0.333 N=5.40 TT=72.0n ) *SRC=UF1001;DI_UF1001;Diodes;Si; 50.0V 1.00A 50.0ns Diodes Inc. 1.0A Ultra-Fast Rectifier .MODEL DI_UF1001 D ( IS=125u RS=17.5m BV=50.0 IBV=5.00u + CJO=79.6p M=0.333 N=3.75 TT=72.0n ) *SRC=UF1002;DI_UF1002;Diodes;Si; 100V 1.00A 50.0ns Diodes Inc. 1.0A Ultra-Fast Rectifier .MODEL DI_UF1002 D ( IS=125u RS=17.5m BV=100 IBV=5.00u + CJO=79.6p M=0.333 N=3.75 TT=72.0n ) *SRC=UF1003;DI_UF1003;Diodes;Si; 200V 1.00A 50.0ns Diodes Inc. 1.0A Ultra-Fast Rectifier .MODEL DI_UF1003 D ( IS=125u RS=17.5m BV=200 IBV=5.00u + CJO=79.6p M=0.333 N=3.75 TT=72.0n ) *SRC=UF1004;DI_UF1004;Diodes;Si; 400V 1.00A 50.0ns Diodes Inc. 1.0A Ultra-Fast Rectifier .MODEL DI_UF1004 D ( IS=38.7u RS=15.4m BV=400 IBV=5.00u + CJO=79.6p M=0.333 N=4.17 TT=72.0n ) *SRC=UF1005;DI_UF1005;Diodes;Si; 600V 1.00A 50.0ns Diodes Inc. 1.0A Ultra-Fast Rectifier .MODEL DI_UF1005 D ( IS=13.9u RS=56.6m BV=600 IBV=5.00u + CJO=46.4p M=0.333 N=4.11 TT=72.0n ) *SRC=UF1006;DI_UF1006;Diodes;Si; 800V 1.00A 50.0ns Diodes Inc. 1.0A Ultra-Fast Rectifier .MODEL DI_UF1006 D ( IS=13.9u RS=56.6m BV=800 IBV=5.00u + CJO=46.4p M=0.333 N=4.11 TT=72.0n ) *SRC=UF1007;DI_UF1007;Diodes;Si; 1.00kV 1.00A 50.0ns Diodes Inc. 1.0A Ultra-Fast Rectifier .MODEL DI_UF1007 D ( IS=13.9u RS=56.6m BV=1.00k IBV=5.00u + CJO=46.4p M=0.333 N=4.11 TT=72.0n ) *SRC=UF3001;DI_UF3001;Diodes;Si; 50.0V 3.00A 50.0ns Diodes Inc. Ultra-Fast Rectifier .MODEL DI_UF3001 D ( IS=70.7u RS=43.0u BV=50.0 IBV=10.0u + CJO=139p M=0.333 N=4.27 TT=72.0n ) *SRC=UF3002;DI_UF3002;Diodes;Si; 100V 3.00A 50.0ns Diodes Inc. Ultra-Fast Rectifier .MODEL DI_UF3002 D ( IS=70.7u RS=43.0u BV=100 IBV=5.00u + CJO=139p M=0.333 N=4.27 TT=72.0n ) *SRC=UF3003;DI_UF3003;Diodes;Si; 200V 3.00A 50.0ns Diodes Inc. Ultra-Fast Rectifier .MODEL DI_UF3003 D ( IS=70.7u RS=43.0u BV=200 IBV=5.00u + CJO=139p M=0.333 N=4.27 TT=72.0n ) *SRC=UF3004;DI_UF3004;Diodes;Si; 400V 3.00A 50.0ns Diodes Inc. Ultra-Fast Rectifier .MODEL DI_UF3004 D ( IS=9.58u RS=15.4m BV=400 IBV=5.00u + CJO=139p M=0.333 N=3.45 TT=72.0n ) *SRC=UF3005;DI_UF3005;Diodes;Si; 600V 3.00A 75.0ns Diodes Inc. Ultra-Fast Rectifier .MODEL Di_UF3005 D ( IS=4.50u RS=14.1m BV=600 IBV=10.0u + CJO=92.5p M=0.333 N=4.29 TT=108n ) *SRC=UF3006;DI_UF3006;Diodes;Si; 800V 3.00A 75.0ns Diodes Inc. Ultra-Fast Rectifier .MODEL Di_UF3006 D ( IS=4.50u RS=14.1m BV=800 IBV=10.0u + CJO=92.5p M=0.333 N=4.29 TT=108n ) *SRC=UF3007;Di_UF3007;Diodes;Si; 1.00kV 3.00A 75.0ns Diodes Inc. Ultra-Fast Rectifier .MODEL Di_UF3007 D ( IS=4.50u RS=14.1m BV=1.00k IBV=10.0u + CJO=92.5p M=0.333 N=4.29 TT=108n ) *SRC=US1A;DI_US1A;Diodes;Si; 50.0V 1.00A 50.0ns Diodes Inc. - .MODEL DI_US1A D ( IS=667n RS=72.0m BV=50.0 IBV=5.00u + CJO=37.0p M=0.333 N=2.41 TT=72.0n ) *SRC=US1B;DI_US1B;Diodes;Si; 100V 1.00A 50.0ns Diodes Inc. - .MODEL DI_US1B D ( IS=667n RS=72.0m BV=100 IBV=5.00u + CJO=37.0p M=0.333 N=2.41 TT=72.0n ) *SRC=US1D;DI_US1D;Diodes;Si; 200V 1.00A 50.0ns Diodes Inc. - .MODEL DI_US1D D ( IS=667n RS=72.0m BV=200 IBV=5.00u + CJO=37.0p M=0.333 N=2.41 TT=72.0n ) *SRC=US1G;DI_US1G;Diodes;Si; 400V 1.00A 50.0ns Diodes Inc. .MODEL DI_US1G D ( IS=540p RS=0.116 BV=400 IBV=5.00u + CJO=37.0p M=0.333 N=1.70 TT=72.0n ) *SRC=US1J;DI_US1J;Diodes;Si; 600V 1.00A 75.0ns Diodes Inc. - .MODEL DI_US1J D ( IS=709n RS=82.3m BV=600 IBV=5.00u + CJO=18.5p M=0.333 N=3.23 TT=108n ) *SRC=US1K;DI_US1K;Diodes;Si; 800V 1.00A 75.0ns Diodes Inc. - .MODEL DI_US1K D ( IS=709n RS=82.3m BV=800 IBV=5.00u + CJO=18.5p M=0.333 N=3.23 TT=108n ) *SRC=US1M;DI_US1M;Diodes;Si; 1.00kV 1.00A 75.0ns Diodes Inc. - .MODEL DI_US1M D ( IS=709n RS=82.3m BV=1.00k IBV=5.00u + CJO=18.5p M=0.333 N=3.23 TT=108n ) *SRC=UF5A400D1;DI_UF5A400D1;Diodes;Si; 400V 5.00A 28.0ns Diodes Inc. Ultra-Fast Rectifier .MODEL DI_UF5A400D1 D ( IS=129n RS=20.58m BV=510 IBV=10.00u + CJO=125.5p M=0.333 N=1.9 TT=28.0n) *DFLF1800 Spice Model v1.0 Last Revised 03/06/2014 Diodes Inc Fast Recovery Rectifier .MODEL DI_DFLF1800 D ( IS=59.0n RS=44.7m BV=800 IBV=10.00u + CJO=12.4p M=0.245 N=2.235 TT=4.32u ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=25Aug2016 *VERSION=1 .SUBCKT RS1MWF 1 2 D1 1 2 DF D2 1 2 DR .MODEL DF D ( IS=5p RS=.041 BV=1000 IKF=80u CJO=15p M=0.35 VJ=.65 N=1 TT=460n EG=.7 TRS1=0.01m XTI=15) .model DR D (N=10 ISR=6.5n BV=1010 IBV=100u EG=.8 RS=2 CJO=1p VJ=.65) .ENDS * (c) 2016 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=25Aug2016 *VERSION=1 .SUBCKT RS1MSWF 1 2 D1 1 2 DF D2 1 2 DR .MODEL DF D ( IS=.3p RS=.1 BV=1000 IKF=500u CJO=6p M=0.35 VJ=.65 N=1 TT=500n EG=.7 TRS1=.01m XTI=16) .model DR D(N=10 ISR=6.5n BV=1010 IBV=100u EG=.55 RS=2.6 CJO=1p VJ=.65) .ENDS * (c) 2016 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=25Aug2016 *VERSION=1 .SUBCKT RS1MSWFQ 1 2 D1 1 2 DF D2 1 2 DR .MODEL DF D ( IS=.3p RS=.1 BV=1000 IKF=500u CJO=6p M=0.35 VJ=.65 N=1 TT=500n EG=.7 TRS1=.01m XTI=16) .model DR D(N=10 ISR=6.5n BV=1010 IBV=100u EG=.55 RS=2.6 CJO=1p VJ=.65) .ENDS * (c) 2016 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *SRC=1N4933;DI_1N4933;Diodes;Si; 50.0V 1.00A 200ns Diodes Inc. Fast Rectifier .MODEL DI_1N4933 D ( IS=830n RS=34.0m BV=50.0 IBV=5.00u + CJO=26.5p M=0.333 N=2.46 TT=288n ) *SRC=AZ23C10;DI_AZ23C10;Diodes;Zener <=10V; 10.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C10 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.35 .MODEL DF D ( IS=12.4p RS=31.6 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.47f RS=3.45 N=2.23 ) .ENDS *SRC=AZ23C10W;DI_AZ23C10W;Diodes;Zener <=10V; 10.0V 0.200W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C10W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.32 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.65f RS=3.45 N=2.23 ) .ENDS *SRC=AZ23C11;DI_AZ23C11;Diodes;Zener 10V-50V; 11.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C11 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.79 .MODEL DF D ( IS=11.2p RS=31.3 N=1.10 + CJO=41.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.25f RS=4.60 N=2.97 ) .ENDS *SRC=AZ23C12;DI_AZ23C12;Diodes;Zener 10V-50V; 12.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C12 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.78 .MODEL DF D ( IS=10.3p RS=31.0 N=1.10 + CJO=39.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.06f RS=4.60 N=2.97 ) .ENDS *SRC=AZ23C13;DI_AZ23C13;Diodes;Zener 10V-50V; 13.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C13 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=9.51p RS=30.8 N=1.10 + CJO=37.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.90f RS=9.46 N=3.00 ) .ENDS *SRC=AZ23C15;DI_AZ23C15;Diodes;Zener 10V-50V; 15.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C15 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10 + CJO=31.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.65f RS=14.5 N=3.00 ) .ENDS *SRC=AZ23C16;DI_AZ23C16;Diodes;Zener 10V-50V; 16.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C16 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.6 .MODEL DF D ( IS=7.72p RS=30.2 N=1.10 + CJO=30.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.54f RS=24.5 N=3.00 ) .ENDS *SRC=AZ23C18;DI_AZ23C18;Diodes;Zener 10V-50V; 18.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C18 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=26.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=34.5 N=3.00 ) .ENDS *SRC=AZ23C18W;DI_AZ23C18W;Diodes;Zener 10V-50V; 18.0V 0.200W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C18W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.5 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10 + CJO=26.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.16e-016 RS=34.5 N=3.00 ) .ENDS *SRC=AZ23C20;DI_AZ23C20;Diodes;Zener 10V-50V; 20.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C20 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.6 .MODEL DF D ( IS=6.18p RS=29.6 N=1.10 + CJO=23.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.24f RS=34.5 N=3.00 ) .ENDS *SRC=AZ23C22;DI_AZ23C22;Diodes;Zener 10V-50V; 22.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C22 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.5 .MODEL DF D ( IS=5.62p RS=29.3 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.12f RS=39.5 N=3.00 ) .ENDS *SRC=AZ23C24;DI_AZ23C24;Diodes;Zener 10V-50V; 24.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C24 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.4 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10 + CJO=21.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.03f RS=64.5 N=3.00 ) .ENDS *SRC=AZ23C27;DI_AZ23C27;Diodes;Zener 10V-50V; 27.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C27 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.4 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10 + CJO=20.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.16e-016 RS=64.5 N=3.00 ) .ENDS *SRC=AZ23C2V7;DI_AZ23C2V7;Diodes;Zener <=10V; 2.70V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C2V7 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.263 .MODEL DF D ( IS=45.8p RS=35.3 N=1.10 + CJO=450p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.16f RS=67.5 N=3.00 ).ENDS *SRC=AZ23C30;DI_AZ23C30;Diodes;Zener 10V-50V; 30.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C30 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.4 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10 + CJO=19.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24e-016 RS=64.5 N=3.00 ).ENDS *SRC=AZ23C33;DI_AZ23C33;Diodes;Zener 10V-50V; 33.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C33 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.4 .MODEL DF D ( IS=3.75p RS=28.2 N=1.10 + CJO=18.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.49e-016 RS=64.5 N=3.00 ).ENDS *SRC=AZ23C36;DI_AZ23C36;Diodes;Zener 10V-50V; 36.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C36 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.3 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87e-016 RS=74.5 N=3.00 ).ENDS *SRC=AZ23C39;DI_AZ23C39;Diodes;Zener 10V-50V; 39.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C39 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.3 .MODEL DF D ( IS=3.17p RS=27.7 N=1.10 + CJO=17.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.34e-016 RS=74.5 N=3.00 ).ENDS *SRC=AZ23C3V0;DI_AZ23C3V0;Diodes;Zener <=10V; 3.00V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C3V0 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.495 .MODEL DF D ( IS=41.2p RS=35.0 N=1.10 + CJO=417p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24f RS=79.5 N=3.00 ).ENDS *SRC=AZ23C3V3;DI_AZ23C3V3;Diodes;Zener <=10V; 3.30V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C3V3 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.787 .MODEL DF D ( IS=37.5p RS=34.7 N=1.10 + CJO=397p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.49f RS=79.5 N=3.00 ).ENDS *SRC=AZ23C3V6;DI_AZ23C3V6;Diodes;Zener <=10V; 3.60V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C3V6 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.08 .MODEL DF D ( IS=34.3p RS=34.5 N=1.10 + CJO=384p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87f RS=79.5 N=3.00 ).ENDS *SRC=AZ23C3V9;DI_AZ23C3V9;Diodes;Zener <=10V; 3.60V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C3V9 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.08 .MODEL DF D ( IS=34.3p RS=34.5 N=1.10 + CJO=370p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87f RS=79.5 N=3.00 ).ENDS *SRC=AZ23C43;DI_AZ23C43;Diodes;Zener 10V-50V; 43.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C43 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 40.3 .MODEL DF D ( IS=2.87p RS=27.4 N=1.10 + CJO=16.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.75e-016 RS=84.5 N=3.00 ).ENDS *SRC=AZ23C47;DI_AZ23C47;Diodes;Zener 10V-50V; 47.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C47 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 44.3 .MODEL DF D ( IS=2.63p RS=27.2 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.26e-016 RS=84.5 N=3.00 ).ENDS *SRC=AZ23C4V3;DI_AZ23C4V3;Diodes;Zener <=10V; 4.30V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C4V3 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.77 .MODEL DF D ( IS=28.7p RS=34.0 N=1.10 + CJO=357p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.75f RS=79.5 N=3.00 ).ENDS *SRC=AZ23C4V7;DI_AZ23C4V7;Diodes;Zener <=10V; 4.70V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C4V7 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.24 .MODEL DF D ( IS=26.3p RS=33.7 N=1.10 + CJO=350p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.26f RS=62.5 N=3.00 ).ENDS *SRC=AZ23C51;DI_AZ23C51;Diodes;Zener >50V; 51.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C51 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 48.2 .MODEL DF D ( IS=2.42p RS=26.9 N=1.10 + CJO=16.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.85e-016 RS=84.5 N=3.00 ).ENDS *SRC=AZ23C5V1;DI_AZ23C5V1;Diodes;Zener <=10V; 5.10V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C5V1 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.73 .MODEL DF D ( IS=24.2p RS=33.5 N=1.10 + CJO=132p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.85f RS=44.5 N=3.00 ).ENDS *SRC=AZ23C5V6;DI_AZ23C5V6;Diodes;Zener <=10V; 5.60V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN *VERSION=2 .SUBCKT DI_AZ23C5V6 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.32 .MODEL DF D ( IS=22.1p RS=33.2 N=1.10 CJO=102p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.41f RS=24.5 N=3.00 ) .ENDS *SRC=AZ23C5V6W;DI_AZ23C5V6W;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C5V6W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.29 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10 + CJO=102p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.94f RS=24.5 N=3.00 ).ENDS *SRC=AZ23C6V2;DI_AZ23C6V2;Diodes;Zener <=10V; 6.20V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C6V2 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.12 .MODEL DF D ( IS=19.9p RS=32.9 N=1.10 + CJO=79.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.99f RS=2.30 N=1.49 ).ENDS *SRC=AZ23C6V8;DI_AZ23C6V8;Diodes;Zener <=10V; 6.80V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C6V8 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.93 .MODEL DF D ( IS=18.2p RS=32.7 N=1.10 + CJO=72.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.64f RS=1.84 N=1.19 ).ENDS *SRC=AZ23C6V8W;DI_AZ23C6V8W;Diodes;Zener <=10V; 6.80V 0.200W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C6V8W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.15 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10 + CJO=72.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.42f RS=3.45 N=2.23 ).ENDS *SRC=AZ23C7V5;DI_AZ23C7V5;Diodes;Zener <=10V; 7.50V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C7V5 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.74 .MODEL DF D ( IS=16.5p RS=32.4 N=1.10 + CJO=59.5p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.30f RS=1.61 N=1.04 ).ENDS *SRC=AZ23C8V2;DI_AZ23C8V2;Diodes;Zener <=10V; 8.20V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C8V2 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.43 .MODEL DF D ( IS=15.1p RS=32.1 N=1.10 + CJO=54.2p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.01f RS=1.61 N=1.04 ).ENDS *SRC=AZ23C9V1;DI_AZ23C9V1;Diodes;Zener <=10V; 9.10V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C9V1 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.00 .MODEL DF D ( IS=13.6p RS=31.8 N=1.10 + CJO=48.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.72f RS=2.30 N=1.49 ).ENDS *SRC=BZT52C10;DI_BZT52C10;Diodes;Zener <=10V; 10.0V 0.500W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_BZT52C10 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.84 .MODEL DF D ( IS=20.6p RS=1.22 N=1.10 + CJO=45.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.12f RS=4.60 N=2.97 ) .ENDS *SRC=BZT52C9V1LP;DI_BZT52C9V1LP;Diodes;Zener <=10V; 9.10V 0.250W Diodes Inc. QFN Zener *SYM=HZEN .SUBCKT DI_BZT52C9V1LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.44 .MODEL DF D ( IS=11.3p RS=31.3 N=1.10 + CJO=50.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.26f RS=3.45 N=2.23 ) .ENDS *SRC=BZT52C10S;DI_BZT52C10S;Diodes;Zener <=10V; 10.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C10S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.76 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10 + CJO=47.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.65f RS=4.60 N=2.97 ).ENDS *SRC=BZT52C10T;DI_BZT52C10T;Diodes;Zener <=10V; 10.0V 0.500W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_BZT52C10 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.84 .MODEL DF D ( IS=20.6p RS=1.22 N=1.10 + CJO=45.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.12f RS=4.60 N=2.97 ) .ENDS *SRC=BZT52C11;DI_BZT52C11;Diodes;Zener 10V-50V; 11.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C11 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.83 .MODEL DF D ( IS=18.7p RS=32.7 N=1.10 + CJO=44.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.75f RS=4.60 N=2.97).ENDS *SRC=BZT52C11LP;DI_BZT52C11LP;Diodes;Zener 10V-50V; 11.0V 0.250W Diodes Inc. QFN Zener *SYM=HZEN .SUBCKT DI_BZT52C11LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.77 .MODEL DF D ( IS=9.36p RS=30.8 N=1.10 + CJO=33.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.87f RS=4.60 N=2.97 ) .ENDS *SRC=BZT52C11S;DI_BZT52C11S;Diodes;Zener 10V-50V; 11.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C11S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.76 .MODEL DF D ( IS=7.49p RS=30.1 N=1.10 + CJO=44.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.50f RS=4.60 N=2.97 ).ENDS *SRC=BZT52C11T;DI_BZT52C11T;Diodes;Zener 10V-50V; 11.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C11 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.83 .MODEL DF D ( IS=18.7p RS=32.7 N=1.10 + CJO=44.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.75f RS=4.60 N=2.97).ENDS *SRC=BZT52C12;DI_BZT52C12;Diodes;Zener 10V-50V; 12.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C12 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.78 .MODEL DF D ( IS=17.2p RS=32.5 N=1.10 + CJO=42.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.43f RS=9.46 N=3.00).ENDS *SRC=BZT52C12LP;DI_BZT52C12LP;Diodes;Zener 10V-50V; 12.0V 0.500W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZT52C12LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 11.62 .MODEL DF D ( IS=295.7p RS=351.4m N=1.522 + CJO=24.28p VJ=746.7m M=346.8m TT=50.1n ) .MODEL DR D ( IS=263.7f RS=4.463 N=614.3m) .ENDS *SRC=BZT52C12S;DI_BZT52C12S;Diodes;Zener 10V-50V; 12.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C12S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.71 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=42.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=9.46 N=3.00 ).ENDS *SRC=BZT52C12T;DI_BZT52C12T;Diodes;Zener 10V-50V; 12.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C12 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.78 .MODEL DF D ( IS=17.2p RS=32.5 N=1.10 + CJO=42.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.43f RS=9.46 N=3.00).ENDS *SRC=BZT52C13;DI_BZT52C13;Diodes;Zener 10V-50V; 13.0V 0.500W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_BZT52C13 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.4 .MODEL DF D ( IS=15.8p RS=1.24 N=1.10 + CJO=51.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.17f RS=1.26 N=0.814 ) .ENDS *SRC=BZT52C13LP;DI_BZT52C13LP;Diodes;Zener 10V-50V; 13.0V 0.250W Diodes Inc. QFN Zener *SYM=HZEN .SUBCKT DI_BZT52C13LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=7.92p RS=30.3 N=1.10 + CJO=26.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.58f RS=14.5 N=3.00 ) .ENDS *SRC=BZT52C13T;DI_BZT52C13T;Diodes;Zener 10V-50V; 13.0V 0.500W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_BZT52C13 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.4 .MODEL DF D ( IS=15.8p RS=1.24 N=1.10 + CJO=51.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.17f RS=1.26 N=0.814 ) .ENDS *SRC=BZT52C15;DI_BZT52C15;Diodes;Zener 10V-50V; 15.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C15 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=13.7p RS=31.9 N=1.10 + CJO=32.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.75f RS=14.5 N=3.00).ENDS *SRC=BZT52C15LP;DI_BZT52C15LP;Diodes;Zener 10V-50V; 15.0V 0.250W Diodes Inc. QFN Zener *SYM=HZEN .SUBCKT DI_BZT52C15LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=25.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=14.5 N=3.00 ) .ENDS *SRC=BZT52C15S;DI_BZT52C15S;Diodes;Zener 10V-50V; 15.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C15S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=5.49p RS=29.3 N=1.10 + CJO=25.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.10f RS=14.5 N=3.00 ).ENDS *SRC=BZT52C15T;DI_BZT52C15T;Diodes;Zener 10V-50V; 15.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C15 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=13.7p RS=31.9 N=1.10 + CJO=32.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.75f RS=14.5 N=3.00).ENDS *SRC=BZT52C16;DI_BZT52C16;Diodes;Zener 10V-50V; 16.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C16 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.7 .MODEL DF D ( IS=12.9p RS=31.7 N=1.10 + CJO=31.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.58f RS=24.5 N=3.00).ENDS *SRC=BZT52C16LP;DI_BZT52C16LP;Diodes;Zener 10V-50V; 16.0V 0.250W Diodes Inc. QFN Zener *SYM=HZEN .SUBCKT DI_BZT52C16LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.6 .MODEL DF D ( IS=6.44p RS=29.7 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.29f RS=24.5 N=3.00 ) .ENDS *SRC=BZT52C16S;DI_BZT52C16S;Diodes;Zener 10V-50V; 16.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C16S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.6 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10 + CJO=25.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.03f RS=24.5 N=3.00 ).ENDS *SRC=BZT52C16T;DI_BZT52C16T;Diodes;Zener 10V-50V; 16.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C16 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.7 .MODEL DF D ( IS=12.9p RS=31.7 N=1.10 + CJO=31.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.58f RS=24.5 N=3.00).ENDS *SRC=BZT52C18;DI_BZT52C18;Diodes;Zener 10V-50V; 18.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C18 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=11.4p RS=31.3 N=1.10 + CJO=27.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.29f RS=29.5 N=3.00).ENDS *SRC=BZT52C18LP;DI_BZT52C18LP;Diodes;Zener 10V-50V; 18.0V 0.250W Diodes Inc. QFN Zener *SYM=HZEN .SUBCKT DI_BZT52C18LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=5.72p RS=29.4 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.14f RS=29.5 N=3.00 ) .ENDS ********************************************************************************************************************************** *SRC=BZT52C18S;DI_BZT52C18S;Diodes;Zener 10V-50V; 18.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C18S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10 + CJO=25.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.16e-016 RS=29.5 N=3.00 ) .ENDS ********************************************************************************************************************************* *SRC=BZT52C18T;DI_BZT52C18T;Diodes;Zener 10V-50V; 18.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C18 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=11.4p RS=31.3 N=1.10 + CJO=27.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.29f RS=29.5 N=3.00).ENDS *SRC=BZT52C20;DI_BZT52C20;Diodes;Zener 10V-50V; 20.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C20 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.6 .MODEL DF D ( IS=10.3p RS=31.0 N=1.10 + CJO=23.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.06f RS=39.5 N=3.00).ENDS * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=1/04/2014 *VERSION=1 .model BZT52C20LP D(IS=.0002n RS=0.01 CJO=1000p M=0.5 VJ=0.4 N=1.2 IKF=30m ISR=.0002u BV=20 IBV=10u TT=40n EG=1.2 TRS1=.01m) .ENDS * (c) 2014 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * .SIMULATOR DEFAULT *SRC=BZT52C20S;DI_BZT52C20S;Diodes;Zener 10V-50V; 20.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C20S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.5 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10 + CJO=23.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24e-016 RS=39.5 N=3.00 ).ENDS *SRC=BZT52C20T;DI_BZT52C20T;Diodes;Zener 10V-50V; 20.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C20 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.6 .MODEL DF D ( IS=10.3p RS=31.0 N=1.10 + CJO=23.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.06f RS=39.5 N=3.00).ENDS *SRC=BZT52C22;DI_BZT52C22;Diodes;Zener 10V-50V; 22.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C22 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.6 .MODEL DF D ( IS=9.36p RS=30.8 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.87f RS=39.5 N=3.00).ENDS *SRC=BZT52C22LP;DI_BZT52C22LP;Diodes;Zener 10V-50V; 22.0V 0.250W Diodes Inc. QFN Zener *SYM=HZEN .SUBCKT DI_BZT52C22LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.5 .MODEL DF D ( IS=4.68p RS=28.8 N=1.10 + CJO=20.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.36e-016 RS=39.5 N=3.00 ) .ENDS *SRC=BZT52C22S;DI_BZT52C22S;Diodes;Zener 10V-50V; 22.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C22S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.5 .MODEL DF D ( IS=3.75p RS=28.2 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.49e-016 RS=39.5 N=3.00 ).ENDS *SRC=BZT52C24LP;DI_BZT52C24LP;Diodes;Zener 10V-50V; 24.0V 0.250W Diodes Inc. QFN Zener *SYM=HZEN .SUBCKT DI_BZT52C24LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.4 .MODEL DF D ( IS=4.29p RS=28.5 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.58e-016 RS=54.5 N=3.00 ) .ENDS *SRC=BZT52C24S;DI_BZT52C24S;Diodes;Zener 10V-50V; 24.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C24S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.4 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10 + CJO=21.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87e-016 RS=54.5 N=3.00 ).ENDS *SRC=BZT52C24T;DI_BZT52C24T;Diodes;Zener 10V-50V; 24.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C24 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.5 .MODEL DF D ( IS=8.58p RS=30.5 N=1.10 + CJO=21.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.72f RS=54.5 N=3.00).ENDS *SRC=BZT52C27;DI_BZT52C27;Diodes;Zener 10V-50V; 27.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C27 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.7 .MODEL DF D ( IS=7.63p RS=30.2 N=1.10 + CJO=20.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.53f RS=41.1 N=3.00).ENDS *SRC=BZT52C27S;DI_BZT52C27S;Diodes;Zener 10V-50V; 27.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C27S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.7 .MODEL DF D ( IS=3.05p RS=27.6 N=1.10 + CJO=20.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.10e-016 RS=41.1 N=3.00 ).ENDS * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=16/04/2014 *VERSION=1 *Comments:zener break down is modelled only at 25°c .SUBCKT BZT52C2V0 1 2 D1 1 2 DF D2 2 1 DR .model DF D(IS=.00015n RS=0.055 CJO=500p M=0.5 VJ=0.4 N=1.1 IKF=200m TT=40n EG=1.05 TRS1=.01m) .model DR D(IS=.6n RS=15 N=3 IKF=.72u T_ABS=25) .ENDS * (c) 2014 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * .SIMULATOR DEFAULT *SRC=BZT52C2V0S;DI_BZT52C2V0S;Diodes;Zener <=10V; 2.00V 0.200W Diodes Inc. 200 mW Zener *SYM=HZEN .SUBCKT DI_BZT52C2V0S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=41.2p RS=35.0 N=1.10 + CJO=503p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24f RS=84.5 N=3.00 ).ENDS *SRC=BZT52C2V0T;DI_BZT52C2V0T;Diodes;Zener <=10V; 2.00V 0.15W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZT52C2V0T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=103p RS=37.6 N=1.10 + CJO=516p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=20.6f RS=84.5 N=3.00).ENDS *SRC=BZT52C2V4;DI_BZT52C2V4;Diodes;Zener <=10V; 2.40V 0.500W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZT52C2V4 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=85.8p RS=37.1 N=1.10 + CJO=461p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=17.2f RS=84.5 N=3.00 ) .ENDS *SRC=BZT52C2V4LP;BZT52C2V4LP;Diodes;Zener <=10V; 2.40V 0.250W DIODES ZENER DIODE *SYM=HZEN .SUBCKT BZT52C2V4LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.2 .MODEL DF D ( IS=42.9p RS=35.1 N=1.10 + CJO=159p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=150n RS=6.5 N=8.0 ) .ENDS *SRC=BZT52C2V4S;DI_BZT52C2V4S;Diodes;Zener <=10V; 2.40V 0.200W Diodes Inc. 200 mW Zener *SYM=HZEN .SUBCKT DI_BZT52C2V4S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=34.3p RS=34.5 N=1.10 + CJO=460p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87f RS=84.5 N=3.00 ).ENDS *SRC=BZT52C2V4T;DI_BZT52C2V4T;Diodes;Zener <=10V; 2.40V 0.15W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZT52C2V4T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=85.8p RS=37.1 N=1.10 + CJO=461p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=17.2f RS=84.5 N=3.00 ) .ENDS *SRC=BZT52C2V7;DI_BZT52C2V7;Diodes;Zener <=10V; 2.70V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C2V7 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.217 .MODEL DF D ( IS=76.3p RS=36.7 N=1.10 + CJO=461p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=15.3f RS=84.5 N=3.00 ) .ENDS *SRC=BZT52C2V7LP;BZT52C2V7LP;Diodes;Zener <=10V; 2.70V 0.250W DIODES ZENER DIODE *SYM=HZEN .SUBCKT BZT52C2V7LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.164 .MODEL DF D ( IS=38.1p RS=34.8 N=1.10 + CJO=152p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.63f RS=84.5 N=3.00 ) .ENDS *SRC=BZT52C2V7S;DI_BZT52C2V7S;Diodes;Zener <=10V; 2.70V 0.200W Diodes Inc. 200 mW Zener *SYM=HZEN .SUBCKT DI_BZT52C2V7S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.146 .MODEL DF D ( IS=30.5p RS=34.1 N=1.10 + CJO=410p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.10f RS=84.5 N=3.00 ).ENDS *SRC=BZT52C2V7T;DI_BZT52C2V7T;Diodes;Zener <=10V; 2.70V 0.15W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C2V7T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.217 .MODEL DF D ( IS=76.3p RS=36.7 N=1.10 + CJO=461p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=15.3f RS=84.5 N=3.00 ) .ENDS *SRC=BZT52C30;DI_BZT52C30;Diodes;Zener 10V-50V; 30.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C30 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.7 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=18.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=41.1 N=3.00).ENDS *SRC=BZT52C30S;DI_BZT52C30S;Diodes;Zener 10V-50V; 30.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C30S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.7 .MODEL DF D ( IS=2.75p RS=27.3 N=1.10 + CJO=18.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49e-016 RS=41.1 N=3.00 ).ENDS *SRC=BZT52C33;DI_BZT52C33;Diodes;Zener 10V-50V; 33.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C33 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.7 .MODEL DF D ( IS=6.24p RS=29.6 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.25f RS=41.1 N=3.00).ENDS *SRC=BZT52C33S;DI_BZT52C33S;Diodes;Zener 10V-50V; 33.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C33S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.7 .MODEL DF D ( IS=2.50p RS=27.0 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.99e-016 RS=41.1 N=3.00 ).ENDS *SRC=BZT52C36;DI_BZT52C36;Diodes;Zener 10V-50V; 36.0V 0.500W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_BZT52C36 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.7 .MODEL DF D ( IS=5.72p RS=1.27 N=1.10 + CJO=18.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.14f RS=51.1 N=3.00 ) .ENDS *SRC=BZT52C36LP;BZT52C36LP;Diodes;Zener 10V-50V; 36.0V 0.250W DIODES ZENER DIODE *SYM=HZEN .SUBCKT BZT52C36LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.7 .MODEL DF D ( IS=2.86p RS=27.4 N=1.10 + CJO=23.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.72e-016 RS=51.1 N=3.00 ) .ENDS *SRC=BZT52C36S;DI_BZT52C36S;Diodes;Zener 10V-50V; 36.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C36S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.7 .MODEL DF D ( IS=2.29p RS=26.8 N=1.10 + CJO=17.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58e-016 RS=41.1 N=3.00 ).ENDS *SRC=BZT52C39;DI_BZT52C39;Diodes;Zener 10V-50V; 39.0V  0.500W   Diodes Inc. *SYM=HZEN .SUBCKT DI_BZT52C39  1 2 *        Terminals    A   K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.6 .MODEL DF D ( IS=5.28p RS=29.1 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.06f RS=91.1 N=3.00 )                                               .ENDS *SRC=BZT52C39LP;BZT52C39LP;Diodes;Zener 10V-50V; 39.0V 0.250W DIODES ZENER DIODE *SYM=HZEN .SUBCKT BZT52C39LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.6 .MODEL DF D ( IS=2.64p RS=27.2 N=1.10 + CJO=24.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.28e-016 RS=91.1 N=3.00 ) .ENDS *SRC=BZT52C39S;DI_BZT52C39S;Diodes;Zener 10V-50V; 39.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C39S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.5 .MODEL DF D ( IS=2.11p RS=26.5 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.23e-016 RS=91.1 N=3.00 ).ENDS *SRC=BZT52C3V0;DI_BZT52C3V0;Diodes;Zener <=10V; 3.00V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C3V0 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.534 .MODEL DF D ( IS=68.7p RS=36.4 N=1.10 + CJO=384p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=13.7f RS=79.5 N=3.00 ) .ENDS *SRC=BZT52C3V0LP;BZT52C3V0LP;Diodes;Zener <=10V; 3.00V 0.250W DIODES ZENER DIODE *SYM=HZEN .SUBCKT BZT52C3V0LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.282 .MODEL DF D ( IS=68.7p RS=36.4 N=1.10 + CJO=384p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=50.7n RS=6.1 N=9.0 ) .ENDS *SRC=BZT52C3V0S;DI_BZT52C3V0S;Diodes;Zener <=10V; 3.00V 0.200W Diodes Inc. 200 mW Zener *SYM=HZEN .SUBCKT DI_BZT52C3V0S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.463 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10 + CJO=403p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49f RS=79.5 N=3.00 ).ENDS *SRC=BZT52C3V0T;DI_BZT52C3V0T;Diodes;Zener <=10V; 3.00V 0.15W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C3V0T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.534 .MODEL DF D ( IS=68.7p RS=36.4 N=1.10 + CJO=384p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=13.7f RS=79.5 N=3.00 ) .ENDS *SRC=BZT52C3V3;DI_BZT52C3V3;Diodes;Zener <=10V; 3.30V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C3V3 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.827 .MODEL DF D ( IS=62.4p RS=36.2 N=1.10 + CJO=403p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=12.5f RS=79.5 N=3.00).ENDS *SRC=BZT52C3V3LP;BZT52C3V3LP;Diodes;Zener <=10V; 3.30V 0.250W DIODES ZENER DIODE *SYM=HZEN .SUBCKT BZT52C3V3LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.773 .MODEL DF D ( IS=31.2p RS=34.2 N=1.10 + CJO=136p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.24f RS=79.5 N=3.00 ) .ENDS *SRC=BZT52C3V3S;DI_BZT52C3V3S;Diodes;Zener <=10V; 3.30V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C3V3S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.756 .MODEL DF D ( IS=25.0p RS=33.6 N=1.10 + CJO=403p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.99f RS=79.5 N=3.00 ).ENDS *SRC=BZT52C3V3T;DI_BZT52C3V3T;Diodes;Zener <=10V; 3.30V 0.15W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C3V3T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.827 .MODEL DF D ( IS=62.4p RS=36.2 N=1.10 + CJO=403p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=12.5f RS=79.5 N=3.00).ENDS *SRC=BZT52C3V6;DI_BZT52C3V6;Diodes;Zener <=10V; 3.60V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C3V6 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.15 .MODEL DF D ( IS=57.2p RS=35.9 N=1.10 + CJO=390p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=11.4f RS=74.5 N=3.00).ENDS *SRC=BZT52C3V6LP;BZT52C3V6LP;Diodes;Zener <=10V; 3.60V 0.250W DIODES ZENER DIODE *SYM=HZEN .SUBCKT BZT52C3V6LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.09 .MODEL DF D ( IS=28.6p RS=34.0 N=1.10 + CJO=130p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.72f RS=74.5 N=3.00 ) .ENDS *SRC=BZT52C3V6S;DI_BZT52C3V6S;Diodes;Zener <=10V; 3.60V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C3V6S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.07 .MODEL DF D ( IS=22.9p RS=33.3 N=1.10 + CJO=390p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58f RS=74.5 N=3.00 ).ENDS *SRC=BZT52C3V6T;DI_BZT52C3V6T;Diodes;Zener <=10V; 3.60V 0.15W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C3V6T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.15 .MODEL DF D ( IS=57.2p RS=35.9 N=1.10 + CJO=390p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=11.4f RS=74.5 N=3.00).ENDS *SRC=BZT52C3V9;DI_BZT52C3V9;Diodes;Zener <=10V; 3.90V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C3V9 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.44 .MODEL DF D ( IS=52.8p RS=35.7 N=1.10 + CJO=384p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=10.6f RS=74.5 N=3.00).ENDS *SRC=BZT52C3V9LP;BZT52C3V9LP;Diodes;Zener <=10V; 3.90V 0.250W DIODES ZENER DIODE *SYM=HZEN .SUBCKT BZT52C3V9LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.39 .MODEL DF D ( IS=26.4p RS=33.7 N=1.10 + CJO=122p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.28f RS=74.5 N=3.00 ) .END ******************************************************************************************************************************** *SRC=BZT52C3V9S;DI_BZT52C3V9S;Diodes;Zener <=10V; 3.90V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C3V9S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.37 .MODEL DF D ( IS=21.1p RS=33.1 N=1.10 + CJO=384p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.23f RS=74.5 N=3.00 ) .ENDS ******************************************************************************************************************************** *SRC=BZT52C3V9T;DI_BZT52C3V9T;Diodes;Zener <=10V; 3.90V 0.15W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C3V9T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.44 .MODEL DF D ( IS=52.8p RS=35.7 N=1.10 + CJO=384p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=10.6f RS=74.5 N=3.00).ENDS *SRC=BZT52C43;DI_BZT52C43;Diodes;Zener 10V-50V; 43.0V 0.410W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_BZT52C43 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 40.3 .MODEL DF D ( IS=3.93p RS=1.51 N=1.10 + CJO=24.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.86e-016 RS=84.5 N=3.00 ) .ENDS *SRC=BZT52C47;DI_BZT52C47;Diodes;Zener 10V-50V; 47.0V 0.410W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_BZT52C47 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 44.3 .MODEL DF D ( IS=3.59p RS=1.48 N=1.10 + CJO=24.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.19e-016 RS=84.5 N=3.00 ) .ENDS *SRC=BZT52C4V3;DI_BZT52C4V3;Diodes;Zener <=10V; 4.30V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C4V3 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.83 .MODEL DF D ( IS=47.9p RS=35.4 N=1.10 + CJO=370p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.58f RS=74.5 N=3.00).ENDS *SRC=BZT52C4V3LP;BZT52C4V3LP;Diodes;Zener <=10V; 4.30V 0.250W DIODES ZENER DIODE *SYM=HZEN .SUBCKT BZT52C4V3LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.78 .MODEL DF D ( IS=24.0p RS=33.4 N=1.10 + CJO=111p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.79f RS=74.5 N=3.00 ) .ENDS *SRC=BZT52C5V1T;DI_BZT52C5V1T;Diodes;Zener <=10V; 5.10V 0.15W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C5V1T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.77 .MODEL DF D ( IS=40.4p RS=34.9 N=1.10 + CJO=145p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.08f RS=44.5 N=3.00).ENDS *SRC=BZT52C5V6;DI_BZT52C5V6;Diodes;Zener <=10V; 5.60V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C5V6 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.36 .MODEL DF D ( IS=36.8p RS=34.7 N=1.10 + CJO=99.2p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.36f RS=24.5 N=3.00).ENDS *SRC=BZT52C5V6LP;DI_BZT52C5V6LP;Diodes;Zener <=10V; 5.60V 0.250W Diodes Inc. QFN Zener *SYM=HZEN .SUBCKT DI_BZT52C5V6LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.31 .MODEL DF D ( IS=18.4p RS=32.7 N=1.10 + CJO=106p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.68f RS=24.5 N=3.00 ) .ENDS *SRC=BZT52C6V8LP;DI_BZT52C6V8LP;Diodes;Zener <=10V; 6.80V 0.250W Diodes Inc. QFN Zener *SYM=HZEN .SUBCKT DI_BZT52C6V8LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.16 .MODEL DF D ( IS=15.1p RS=32.1 N=1.10 + CJO=66.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.03f RS=3.45 N=2.23 ) .ENDS *SRC=BZT52C7V5LP;DI_BZT52C7V5LP;Diodes;Zener <=10V; 7.50V 0.250W Diodes Inc. QFN Zener *SYM=HZEN .SUBCKT DI_BZT52C7V5LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.85 .MODEL DF D ( IS=13.7p RS=31.9 N=1.10 + CJO=55.5p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.75f RS=3.45 N=2.23 ) .ENDS *SRC=BZT52C8V2;DI_BZT52C8V2;Diodes;Zener <=10V; 8.20V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C8V2 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.59 .MODEL DF D ( IS=25.1p RS=33.6 N=1.10 + CJO=38.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.02f RS=3.45 N=2.23 ) .ENDS *SRC=BZT52C8V2LP;DI_BZT52C8V2LP;Diodes;Zener <=10V; 8.20V 0.250W Diodes Inc. QFN Zener *SYM=HZEN .SUBCKT DI_BZT52C8V2LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.55 .MODEL DF D ( IS=12.6p RS=31.6 N=1.10 + CJO=51.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.51f RS=3.45 N=2.23 ) .ENDS *SRC=BZT52C8V2T;DI_BZT52C8V2T;Diodes;Zener <=10V; 8.20V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C8V2 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.59 .MODEL DF D ( IS=25.1p RS=33.6 N=1.10 + CJO=38.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.02f RS=3.45 N=2.23 ) .ENDS *SRC=BZT52C9V1;DI_BZT52C9V1;Diodes;Zener <=10V; 9.10V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C9V1 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.48 .MODEL DF D ( IS=22.6p RS=33.3 N=1.10 + CJO=35.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.53f RS=3.45 N=2.23 ) .ENDS *SRC=BZT52C9V1LP;DI_BZT52C9V1LP;Diodes;Zener <=10V; 9.10V 0.250W Diodes Inc. QFN Zener *SYM=HZEN .SUBCKT DI_BZT52C9V1LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.44 .MODEL DF D ( IS=11.3p RS=31.3 N=1.10 + CJO=50.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.26f RS=3.45 N=2.23 ) .ENDS *SRC=BZT52C9V1T;DI_BZT52C9V1T;Diodes;Zener <=10V; 9.10V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C9V1 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.48 .MODEL DF D ( IS=22.6p RS=33.3 N=1.10 + CJO=35.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.53f RS=3.45 N=2.23 ) .ENDS *SRC=BZX84C10;DI_BZX84C10;Diodes;Zener <=10V; 10.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C10 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.81 .MODEL DF D ( IS=14.4p RS=32.0 N=1.10 + CJO=24.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.88f RS=4.60 N=2.97 ) .ENDS *SRC=BZX84C11;DI_BZX84C11;Diodes;Zener 10V-50V; 11.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C11 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.80 .MODEL DF D ( IS=13.1p RS=31.7 N=1.10 + CJO=45.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.62f RS=4.60 N=2.97 ) .ENDS *SRC=BZX84C12;DI_BZX84C12;Diodes;Zener 10V-50V; 12.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C12 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.75 .MODEL DF D ( IS=12.0p RS=31.5 N=1.10 + CJO=42.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.40f RS=9.46 N=3.00 ) .ENDS *SRC=BZX84C13;DI_BZX84C13;Diodes;Zener 10V-50V; 13.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C13 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=11.1p RS=31.3 N=1.10 + CJO=40.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.22f RS=14.5 N=3.00 ) .ENDS *SRC=BZX84C15;DI_BZX84C15;Diodes;Zener 10V-50V; 15.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C15 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=9.61p RS=30.8 N=1.10 + CJO=37.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.92f RS=14.5 N=3.00 ) .ENDS *SRC=BZX84C16;DI_BZX84C16;Diodes;Zener 10V-50V; 16.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C16 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.7 .MODEL DF D ( IS=9.01p RS=30.7 N=1.10 + CJO=35.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.80f RS=24.5 N=3.00 ) .ENDS *SRC=BZX84C18;DI_BZX84C18;Diodes;Zener 10V-50V; 18.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C18 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=8.01p RS=30.3 N=1.10 + CJO=33.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.60f RS=29.5 N=3.00 ) .ENDS *SRC=BZX84C20;DI_BZX84C20;Diodes;Zener 10V-50V; 20.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C20 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.6 .MODEL DF D ( IS=7.21p RS=30.0 N=1.10 + CJO=31.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.44f RS=39.5 N=3.00 ) .ENDS *SRC=BZX84C22;DI_BZX84C22;Diodes;Zener 10V-50V; 22.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C22 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.6 .MODEL DF D ( IS=6.55p RS=29.8 N=1.10 + CJO=30.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.31f RS=39.5 N=3.00 ) .ENDS *SRC=BZX84C24;DI_BZX84C24;Diodes;Zener 10V-50V; 24.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C24 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.5 .MODEL DF D ( IS=6.01p RS=29.5 N=1.10 + CJO=28.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.20f RS=54.5 N=3.00 ) .ENDS *SRC=BZX84C27;DI_BZX84C27;Diodes;Zener 10V-50V; 27.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C27 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.4 .MODEL DF D ( IS=5.34p RS=29.2 N=1.10 + CJO=27.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.07f RS=64.5 N=3.00 ) .ENDS *SRC=BZX84C2V4;DI_BZX84C2V4;Diodes;Zener <=10V; 2.40V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C2V4 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=60.1p RS=36.1 N=1.10 + CJO=205p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=12.0f RS=84.5 N=3.00 ) .ENDS *SRC=BZX84C2V7;DI_BZX84C2V7;Diodes;Zener <=10V; 2.70V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C2V7 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.190 .MODEL DF D ( IS=53.4p RS=35.7 N=1.10 + CJO=172p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=10.7f RS=84.5 N=3.00 ) .ENDS *SRC=BZX84C30;DI_BZX84C30;Diodes;Zener 10V-50V; 30.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C30 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.4 .MODEL DF D ( IS=4.81p RS=28.9 N=1.10 + CJO=26.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.61e-016 RS=64.5 N=3.00 ) .ENDS *SRC=BZX84C33;DI_BZX84C33;Diodes;Zener 10V-50V; 33.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C33 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.4 .MODEL DF D ( IS=4.37p RS=28.6 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.74e-016 RS=64.5 N=3.00 ) .ENDS *SRC=BZX84C36;DI_BZX84C36;Diodes;Zener 10V-50V; 36.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C36 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.3 .MODEL DF D ( IS=4.01p RS=28.4 N=1.10 + CJO=24.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.01e-016 RS=74.5 N=3.00 ) .ENDS *SRC=BZX84C39;DI_BZX84C39;Diodes;Zener 10V-50V; 39.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C39 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.1 .MODEL DF D ( IS=3.70p RS=28.1 N=1.10 + CJO=23.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.39e-016 RS=114 N=3.00 ) .ENDS *SRC=BZX84C3V0;DI_BZX84C3V0;Diodes;Zener <=10V; 3.00V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C3V0 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.507 .MODEL DF D ( IS=48.1p RS=35.4 N=1.10 + CJO=147p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.61f RS=79.5 N=3.00 ) .ENDS *SRC=BZX84C3V3;DI_BZX84C3V3;Diodes;Zener <=10V; 3.30V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C3V3 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.799 .MODEL DF D ( IS=43.7p RS=35.2 N=1.10 + CJO=127p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.74f RS=79.5 N=3.00 ) .ENDS *SRC=BZX84C3V6;DI_BZX84C3V6;Diodes;Zener <=10V; 3.60V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C3V6 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.12 .MODEL DF D ( IS=40.1p RS=34.9 N=1.10 + CJO=112p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.01f RS=74.5 N=3.00 ) .ENDS *SRC=BZX84C3V9;DI_BZX84C3V9;Diodes;Zener <=10V; 3.90V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C3V9 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.41 .MODEL DF D ( IS=37.0p RS=34.7 N=1.10 + CJO=99.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.39f RS=74.5 N=3.00 ) .ENDS *SRC=BZX84C43;DI_BZX84C43;Diodes;Zener 10V-50V; 43.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C43 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 40.0 .MODEL DF D ( IS=3.35p RS=27.8 N=1.10 + CJO=22.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.71e-016 RS=134 N=3.00 ) .ENDS *SRC=BZX84C47;DI_BZX84C47;Diodes;Zener 10V-50V; 47.0V 0.350W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZX84C47 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 43.9 .MODEL DF D ( IS=3.07p RS=27.6 N=1.10 + CJO=22.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.14e-016 RS=154 N=3.00 ) .ENDS *SRC=BZX84C4V3;DI_BZX84C4V3;Diodes;Zener <=10V; 4.30V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C4V3 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.80 .MODEL DF D ( IS=33.5p RS=34.4 N=1.10 + CJO=85.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.71f RS=74.5 N=3.00 ) .ENDS *SRC=BZX84C4V7;DI_BZX84C4V7;Diodes;Zener <=10V; 4.70V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C4V7 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.25 .MODEL DF D ( IS=30.7p RS=34.2 N=1.10 + CJO=74.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.14f RS=64.5 N=3.00 ) .ENDS *SRC=bzx84c51;DI_BZX84C51;Diodes;Zener >50V; 51.0V 0.350W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_BZX84C51 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 48.5 .MODEL DF D ( IS=2.83p RS=1.77 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.65e-016 RS=141 N=3.00 ) .ENDS *SRC=BZX84C5V1;DI_BZX84C5V1;Diodes;Zener <=10V; 5.10V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C5V1 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.74 .MODEL DF D ( IS=28.3p RS=33.9 N=1.10 + CJO=66.2p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.65f RS=44.5 N=3.00 ) .ENDS *SRC=BZX84C5V6;DI_BZX84C5V6;Diodes;Zener <=10V; 5.60V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C5V6 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.33 .MODEL DF D ( IS=25.7p RS=33.7 N=1.10 + CJO=57.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.15f RS=24.5 N=3.00 ) .ENDS *SRC=BZX84C6V2;DI_BZX84C6V2;Diodes;Zener <=10V; 6.20V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C6V2 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.12 .MODEL DF D ( IS=23.3p RS=33.4 N=1.10 + CJO=49.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.65f RS=2.30 N=1.49 ) .ENDS *SRC=BZX84C6V8;DI_BZX84C6V8;Diodes;Zener <=10V; 6.80V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C6V8 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.18 .MODEL DF D ( IS=21.2p RS=33.1 N=1.10 + CJO=43.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.24f RS=3.45 N=2.23 ) .ENDS *SRC=BZX84C7V5;DI_C;Diodes;Zener <=10V; 7.50V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C7V5 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.87 .MODEL DF D ( IS=19.2p RS=32.8 N=1.10 + CJO=37.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.85f RS=3.45 N=2.23 ) .ENDS *SRC=BZX84C8V2;DI_BZX84C8V2;Diodes;Zener <=10V; 8.20V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C8V2 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.57 .MODEL DF D ( IS=17.6p RS=32.6 N=1.10 + CJO=32.5p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.52f RS=3.45 N=2.23 ) .ENDS *SRC=BZX84C9V1;DI_BZX84C9V1;Diodes;Zener <=10V; 9.10V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C9V1 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.46 .MODEL DF D ( IS=15.8p RS=32.3 N=1.10 + CJO=27.8p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.17f RS=3.45 N=2.23 ) .ENDS *SRC=DDZ10C;DI_DDZ10C;Diodes;Zener <=10V; 10.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ10C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.65 .MODEL DF D ( IS=20.6p RS=33.0 N=1.10 + CJO=39.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.12f RS=4.11 N=3.00 ) .ENDS *SRC=DDZ10CS;DI_DDZ10CS;Diodes;Zener <=10V; 10.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ10CS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.58 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10 + CJO=39.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.65f RS=4.11 N=3.00 ) .ENDS *SRC=DDZ11C;DI_DDZ11C;Diodes;Zener 10V-50V; 11.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ11C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.77 .MODEL DF D ( IS=18.7p RS=32.7 N=1.10 + CJO=33.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.75f RS=2.30 N=2.97 ) .ENDS *SRC=DDZ11CS;DI_DDZ11CS;Diodes;Zener 10V-50V; 11.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ11CS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.70 .MODEL DF D ( IS=7.49p RS=30.1 N=1.10 + CJO=33.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.50f RS=2.30 N=2.97 ) .ENDS *SRC=DDZ12C;DI_DDZ12C;Diodes;Zener 10V-50V; 12.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ12C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.73 .MODEL DF D ( IS=17.2p RS=32.5 N=1.10 + CJO=32.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.43f RS=4.23 N=3.00 ) .ENDS *SRC=DDZ12CS;DI_DDZ12CS;Diodes;Zener 10V-50V; 12.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ12CS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.66 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=32.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=4.23 N=3.00 ) .ENDS *SRC=DDZ13B;DI_DDZ13B;Diodes;Zener 10V-50V; 13.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ13B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=15.8p RS=32.3 N=1.10 + CJO=26.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.17f RS=6.23 N=3.00 ) .ENDS *SRC=DDZ13BS;DI_DDZ13BS;Diodes;Zener 10V-50V; 13.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ13BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.6 .MODEL DF D ( IS=6.34p RS=29.7 N=1.10 + CJO=26.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.27f RS=6.23 N=3.00 ) .ENDS *SRC=DDZ14;DI_DDZ14;Diodes;Zener 10V-50V; 14.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ14 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 11.7 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.94f RS=8.23 N=3.00 ) .ENDS *SRC=DDZ14S;DI_DDZ14S;Diodes;Zener 10V-50V; 14.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ14S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 11.6 .MODEL DF D ( IS=5.89p RS=29.4 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.18f RS=8.23 N=3.00 ) .ENDS *SRC=DDZ15;DI_DDZ15;Diodes;Zener 10V-50V; 15.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ15 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=13.7p RS=31.9 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.75f RS=10.2 N=3.00 ) .ENDS *SRC=DDZ15S;DI_DDZ15S;Diodes;Zener 10V-50V; 15.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ15S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.6 .MODEL DF D ( IS=5.49p RS=29.3 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.10f RS=10.2 N=3.00 ) .ENDS *SRC=DDZ16;DI_DDZ16;Diodes;Zener 10V-50V; 16.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ16 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.6 .MODEL DF D ( IS=12.9p RS=31.7 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.58f RS=10.2 N=3.00 ) .ENDS *SRC=DDZ16S;DI_DDZ16S;Diodes;Zener 10V-50V; 16.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ16S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.6 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.03f RS=10.2 N=3.00 ) .ENDS *SRC=DDZ18C;DI_DDZ18C;Diodes;Zener 10V-50V; 18.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ18C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=11.4p RS=31.3 N=1.10 + CJO=21.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.29f RS=15.2 N=3.00 ) .ENDS *SRC=DDZ18CS;DI_DDZ18CS;Diodes;Zener 10V-50V; 18.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ18CS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.5 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10 + CJO=21.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.16e-016 RS=15.2 N=3.00 ) .ENDS *SRC=DDZ20C;DI_DDZ20C;Diodes;Zener 10V-50V; 20.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ20C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.5 .MODEL DF D ( IS=10.3p RS=31.0 N=1.10 + CJO=20.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.06f RS=20.2 N=3.00 ) .ENDS *SRC=DDZ20CS;DI_DDZ20CS;Diodes;Zener 10V-50V; 20.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ20CS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.5 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10 + CJO=20.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24e-016 RS=20.2 N=3.00 ) .ENDS *SRC=DDZ22D;DI_DDZ22D;Diodes;Zener 10V-50V; 22.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ22D 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.7 .MODEL DF D ( IS=9.36p RS=30.8 N=1.10 + CJO=18.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.87f RS=14.5 N=3.00 ) .ENDS *SRC=DDZ22DS;DI_DDZ22DS;Diodes;Zener 10V-50V; 22.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ22DS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.6 .MODEL DF D ( IS=3.75p RS=28.2 N=1.10 + CJO=18.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.49e-016 RS=14.5 N=3.00 ) .ENDS *SRC=DDZ24C;DI_DDZ24C;Diodes;Zener 10V-50V; 24.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ24C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.7 .MODEL DF D ( IS=8.58p RS=30.5 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.72f RS=19.5 N=3.00 ) .ENDS *SRC=DDZ24CS;DI_DDZ24CS;Diodes;Zener 10V-50V; 24.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ24CS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.6 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87e-016 RS=19.5 N=3.00 ) .ENDS *SRC=DDZ27D;DI_DDZ27D;Diodes;Zener 10V-50V; 27.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ27D 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.6 .MODEL DF D ( IS=7.63p RS=30.2 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.53f RS=29.5 N=3.00 ) .ENDS *SRC=DDZ27DS;DI_DDZ27DS;Diodes;Zener 10V-50V; 27.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ27DS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.5 .MODEL DF D ( IS=3.05p RS=27.6 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.10e-016 RS=29.5 N=3.00 ) .ENDS *SRC=DDZ30D;DI_DDZ30D;Diodes;Zener 10V-50V; 30.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ30D 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.6 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=39.5 N=3.00 ) .ENDS *SRC=DDZ30DS;DI_DDZ30DS;Diodes;Zener 10V-50V; 30.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ30DS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.5 .MODEL DF D ( IS=2.75p RS=27.3 N=1.10 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49e-016 RS=39.5 N=3.00 ) .ENDS *SRC=DDZ33;DI_DDZ33;Diodes;Zener 10V-50V; 33.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ33 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.4 .MODEL DF D ( IS=6.24p RS=29.6 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.25f RS=59.5 N=3.00 ) .ENDS *SRC=DDZ33S;DI_DDZ33S;Diodes;Zener 10V-50V; 33.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ33S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.4 .MODEL DF D ( IS=2.50p RS=27.0 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.99e-016 RS=59.5 N=3.00 ) .ENDS *SRC=DDZ36;DI_DDZ36;Diodes;Zener 10V-50V; 36.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ36 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.4 .MODEL DF D ( IS=5.72p RS=29.4 N=1.10 + CJO=23.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.14f RS=69.5 N=3.00 ) .ENDS *SRC=DDZ36S;DI_DDZ36S;Diodes;Zener 10V-50V; 36.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ36S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.3 .MODEL DF D ( IS=2.29p RS=26.8 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58e-016 RS=69.5 N=3.00 ) .ENDS *SRC=DDZ39F;DI_DDZ39F;Diodes;Zener 10V-50V; 39.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ39F 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.4 .MODEL DF D ( IS=5.28p RS=29.1 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.06f RS=69.5 N=3.00 ) .ENDS *SRC=DDZ43;DI_DDZ43;Diodes;Zener 10V-50V; 43.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ43 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 40.4 .MODEL DF D ( IS=4.79p RS=28.9 N=1.10 + CJO=20.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.58e-016 RS=74.5 N=3.00 ) .ENDS *SRC=DDZ43S;DI_DDZ43S;Diodes;Zener 10V-50V; 43.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ43S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 40.3 .MODEL DF D ( IS=1.92p RS=26.3 N=1.10 + CJO=12.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.83e-016 RS=74.5 N=3.00 ) .ENDS *SRC=DDZ5V1B;DI_DDZ5V1B;Diodes;Zener <=10V; 5.10V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ5V1B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.62 .MODEL DF D ( IS=40.4p RS=34.9 N=1.10 + CJO=119p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.08f RS=13.1 N=3.00 ) .ENDS *SRC=DDZ5V1BS;DI_DDZ5V1BS;Diodes;Zener <=10V; 5.10V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ5V1BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.55 .MODEL DF D ( IS=16.2p RS=32.3 N=1.10 + CJO=119p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.23f RS=13.1 N=3.00 ) .ENDS *SRC=DDZ5V6B;DI_DDZ5V6B;Diodes;Zener <=10V; 5.60V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ5V6B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.23 .MODEL DF D ( IS=36.8p RS=34.7 N=1.10 + CJO=106p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.36f RS=7.11 N=3.00 ) .ENDS *SRC=DDZ5V6BS;DI_DDZ5V6BS;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ5V6BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.16 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10 + CJO=106p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.94f RS=7.11 N=3.00 ) .ENDS *SRC=DDZ6V2B;DI_DDZ6V2B;Diodes;Zener <=10V; 6.20V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ6V2B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.91 .MODEL DF D ( IS=33.2p RS=34.4 N=1.10 + CJO=80.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.65f RS=3.11 N=3.00 ) .ENDS *SRC=DDZ6V2BS;DI_DDZ6V2BS;Diodes;Zener <=10V; 6.20V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ6V2BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.83 .MODEL DF D ( IS=13.3p RS=31.8 N=1.10 + CJO=80.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.66f RS=3.11 N=3.00 ) .ENDS *SRC=DDZ6V8C;DI_DDZ6V8C;Diodes;Zener <=10V; 6.80V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ6V8C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 4.56 .MODEL DF D ( IS=30.3p RS=34.1 N=1.10 + CJO=72.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.06f RS=1.15 N=2.97 ) .ENDS *SRC=DDZ6V8CS;DI_DDZ6V8CS;Diodes;Zener <=10V; 6.80V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ6V8CS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 4.49 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10 + CJO=72.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.42f RS=1.15 N=2.97 ) .ENDS *SRC=DDZ7V5C;DI_DDZ7V5C;Diodes;Zener <=10V; 7.50V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ7V5C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.21 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49f RS=2.12 N=3.00 ) .ENDS *SRC=DDZ7V5CS;DI_DDZ7V5CS;Diodes;Zener <=10V; 7.50V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ7V5CS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.14 .MODEL DF D ( IS=11.0p RS=31.2 N=1.10 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.20f RS=2.12 N=3.00 ) .ENDS *DIODES_INC_SPICE_MODEL *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=1Mar2011 *VERSION=2 .SUBCKT DDZ8V2C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.6 .MODEL DF D ( IS=25.1p RS=33.6 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.02f RS=3.8 N=1 ) .ENDS .SIMULATOR DEFAULT * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *SRC=DDZ8V2CS;DI_DDZ8V2CS;Diodes;Zener <=10V; 8.20V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ8V2CS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.79 .MODEL DF D ( IS=10.0p RS=31.0 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.01f RS=4.11 N=3.00 ) .ENDS *SRC=DDZ9688;DI_DDZ9688;Diodes;Zener <=10V; 4.70V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9688 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.75 .MODEL DF D ( IS=43.8p RS=35.2 N=1.10 + CJO=119p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.77n RS=0.05k N=6 ) .ENDS *SRC=DDZ9689;DI_DDZ9689;Diodes;Zener <=10V; 5.10V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9689 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.15 .MODEL DF D ( IS=40.4p RS=34.9 N=1.10 + CJO=119p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.08f RS=3.95k N=3.00 ) .ENDS *SRC=DDZ9689S;DI_DDZ9689S;Diodes;Zener <=10V; 5.10V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9689S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.08 .MODEL DF D ( IS=16.2p RS=32.3 N=1.10 + CJO=119p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.23f RS=3.95k N=3.00 ) .ENDS * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=17/09/2014 *VERSION=1 .model DDZ9689T D(IS=.015p RS=.06 CJO=165p M=0.5 IKF=20m VJ=0.5 N=1.08 BV=5.8 NBVL=24 NBV=1.2 IBVL=.15m IBV=.4m TT=40n EG=1.1 TRS1=1.1m TBV1=.01m) * (c) 2014 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * .SIMULATOR DEFAULT *SRC=DDZ9690;DI_DDZ9690;Diodes;Zener <=10V; 5.60V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9690 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.79 .MODEL DF D ( IS=36.8p RS=34.7 N=1.10 + CJO=92.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.36f RS=946 N=3.00 ) .ENDS *SRC=DDZ9690S;DI_DDZ9690S;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9690S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.72 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10 + CJO=92.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.94f RS=946 N=3.00 ) .ENDS *SRC=DDZ9690T;DI_DDZ9690T;Diodes;Zener <=10V; 5.60V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9690T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.70 .MODEL DF D ( IS=11.0p RS=31.2 N=1.10 + CJO=92.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.21f RS=946 N=3.00 ) .ENDS *SRC=DDZ9691;DI_DDZ9691;Diodes;Zener <=10V; 6.20V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9691 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.31 .MODEL DF D ( IS=33.2p RS=34.4 N=1.10 + CJO=79.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.65f RS=230 N=1.49 ) .ENDS *SRC=DDZ9691S;DI_DDZ9691S;Diodes;Zener <=10V; 6.20V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9691S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.28 .MODEL DF D ( IS=13.3p RS=31.8 N=1.10 + CJO=79.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.66f RS=230 N=1.49 ) .ENDS *SRC=DDZ9691T;DI_DDZ9691T;Diodes;Zener <=10V; 6.20V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9691T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.27 .MODEL DF D ( IS=9.97p RS=31.0 N=1.10 + CJO=79.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.99f RS=230 N=1.49 ) .ENDS *SRC=DDZ9692;DI_DDZ9692;Diodes;Zener <=10V; 6.80V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9692 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.71 .MODEL DF D ( IS=30.3p RS=34.1 N=1.10 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.06f RS=23.0 N=0.149 ) .ENDS *SRC=DDZ9692S;DI_DDZ9692S;Diodes;Zener <=10V; 6.80V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9692S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.71 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.42f RS=23.0 N=0.149 ) .ENDS *SRC=DDZ9692T;DI_DDZ9692T;Diodes;Zener <=10V; 6.80V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9692T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.71 .MODEL DF D ( IS=9.09p RS=30.7 N=1.10 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.82f RS=23.0 N=0.149 ) .ENDS *SRC=DDZ9693;DI_DDZ9693;Diodes;Zener <=10V; 7.50V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9693 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.41 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49f RS=23.0 N=0.149 ) .ENDS *SRC=DDZ9693S;DI_DDZ9693S;Diodes;Zener <=10V; 7.50V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9693S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.41 .MODEL DF D ( IS=11.0p RS=31.2 N=1.10 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.20f RS=23.0 N=0.149 ) .ENDS *SRC=DDZ9693T;DI_DDZ9693T;Diodes;Zener <=10V; 7.50V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9693T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.41 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.65f RS=23.0 N=0.149 ) .ENDS *SRC=DDZ9694;DI_DDZ9694;Diodes;Zener <=10V; 8.20V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9694 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.07 .MODEL DF D ( IS=25.1p RS=33.6 N=1.10 + CJO=47.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.02f RS=34.5 N=0.223 ) .ENDS *SRC=DDZ9694S;DI_DDZ9694S;Diodes;Zener <=10V; 8.20V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9694S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.06 .MODEL DF D ( IS=10.0p RS=31.0 N=1.10 + CJO=47.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.01f RS=34.5 N=0.223 ) .ENDS *SRC=DDZ9694T;DI_DDZ9694T;Diodes;Zener <=10V; 8.20V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9694T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.06 .MODEL DF D ( IS=7.54p RS=30.2 N=1.10 + CJO=47.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.51f RS=34.5 N=0.223 ) .ENDS *SRC=DDZ9696;DI_DDZ9696;Diodes;Zener <=10V; 9.10V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9696 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.90 .MODEL DF D ( IS=22.6p RS=33.3 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.53f RS=50.6 N=0.327 ) .ENDS *SRC=DDZ9696S;DI_DDZ9696S;Diodes;Zener <=10V; 9.10V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9696S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.89 .MODEL DF D ( IS=9.05p RS=30.7 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.81f RS=50.6 N=0.327 ) .ENDS *SRC=DDZ9696T;DI_DDZ9696T;Diodes;Zener <=10V; 9.10V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9696T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.89 .MODEL DF D ( IS=6.79p RS=29.9 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.36f RS=50.6 N=0.327 ) .ENDS *SRC=DDZ9697;DI_DDZ9697;Diodes;Zener <=10V; 10.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9697 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.73 .MODEL DF D ( IS=20.6p RS=33.0 N=1.10 + CJO=39.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.12f RS=69.0 N=0.446 ) .ENDS *SRC=DDZ9697S;DI_DDZ9697S;Diodes;Zener <=10V; 10.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9697S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.72 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10 + CJO=39.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.65f RS=69.0 N=0.446 ) .ENDS *SRC=DDZ9697T;DI_DDZ9697T;Diodes;Zener <=10V; 10.0V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9697T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.71 .MODEL DF D ( IS=6.18p RS=29.6 N=1.10 + CJO=39.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.24f RS=69.0 N=0.446 ) .ENDS *SRC=DDZ9698;DI_DDZ9698;Diodes;Zener 10V-50V; 11.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9698 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=18.7p RS=32.7 N=1.10 + CJO=35.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.75f RS=69.0 N=0.446 ) .ENDS *SRC=DDZ9698T;DI_DDZ9698T;Diodes;Zener 10V-50V; 11.0V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9698T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=18.7p RS=32.7 N=1.10 + CJO=35.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.75f RS=69.0 N=0.446 ) .ENDS *SRC=DDZ9699;DI_DDZ9699;Diodes;Zener 10V-50V; 12.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9699 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 11.7 .MODEL DF D ( IS=17.2p RS=32.5 N=1.10 + CJO=32.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.43f RS=6.9 N=0.446 ) .ENDS *SRC=DDZ9699S;DI_DDZ9699S;Diodes;Zener 10V-50V; 12.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9699S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 11.7 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=32.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=69.0 N=0.446 ) .ENDS *SRC=DDZ9699T;DI_DDZ9699T;Diodes;Zener 10V-50V; 12.0V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9699T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 11.7 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10 + CJO=32.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.03f RS=69.0 N=0.446 ) .ENDS *SRC=DDZ9700;DI_DDZ9700;Diodes;Zener 10V-50V; 13.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9700 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=15.8p RS=32.3 N=1.10 + CJO=30.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.17f RS=6.9 N=0.446 ) .ENDS *SRC=DDZ9700S;DI_DDZ9700S;Diodes;Zener 10V-50V; 13.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9700S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=6.34p RS=29.7 N=1.10 + CJO=30.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.27f RS=69.0 N=0.446 ) .ENDS *SRC=DDZ9700T;DI_DDZ9700T;Diodes;Zener 10V-50V; 13.0V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9700T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=4.75p RS=28.8 N=1.10 + CJO=30.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.51e-016 RS=69.0 N=0.446 ) .ENDS *SRC=DDZ9701;DI_DDZ9701;Diodes;Zener 10V-50V; 14.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9701 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.6 .MODEL DF D ( IS=434.6p RS=534.7m N=1.8 + CJO=100p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=51.11f RS=3.404m N=0.750 ) .ENDS *SRC=DDZ9702;DI_DDZ9702;Diodes;Zener 10V-50V; 15.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9702 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 14.7 .MODEL DF D ( IS=13.7p RS=31.9 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.75f RS=6.9 N=0.446 ) .ENDS *SRC=DDZ9702S;DI_DDZ9702S;Diodes;Zener 10V-50V; 15.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9702S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 14.7 .MODEL DF D ( IS=5.49p RS=29.3 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.10f RS=69.0 N=0.446 ) .ENDS *SRC=DDZ9702T;DI_DDZ9702T;Diodes;Zener 10V-50V; 15.0V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9702T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 14.7 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24e-016 RS=69.0 N=0.446 ) .ENDS *SRC=DDZ9703;DI_DDZ9703;Diodes;Zener 10V-50V; 16.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9703 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.7 .MODEL DF D ( IS=12.9p RS=31.7 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.58f RS=69.0 N=0.446 ) .ENDS *SRC=DDZ9703S;DI_DDZ9703S;Diodes;Zener 10V-50V; 16.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9703S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.7 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.03f RS=69.0 N=0.446 ) .ENDS *SRC=DDZ9703T;DI_DDZ9703T;Diodes;Zener 10V-50V; 16.0V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9703T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.7 .MODEL DF D ( IS=3.86p RS=28.2 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.73e-016 RS=69.0 N=0.446 ) .ENDS *SRC=DDZ9705;DI_DDZ9705;Diodes;Zener 10V-50V; 18.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9705 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.7 .MODEL DF D ( IS=11.4p RS=31.3 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.29f RS=69.0 N=0.446 ) .ENDS *SRC=DDZ9705S;DI_DDZ9705S;Diodes;Zener 10V-50V; 18.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9705S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.7 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.16e-016 RS=69.0 N=0.446 ) .ENDS *SRC=DDZ9705T;DI_DDZ9705T;Diodes;Zener 10V-50V; 18.0V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9705T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.7 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87e-016 RS=69.0 N=0.446 ) .ENDS *SRC=DDZ9707;DI_DDZ9707;Diodes;Zener 10V-50V; 20.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9707 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.7 .MODEL DF D ( IS=10.3p RS=31.0 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.06f RS=69.0 N=0.446 ) .ENDS *SRC=DDZ9707S;DI_DDZ9707S;Diodes;Zener 10V-50V; 20.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9707S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.7 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24e-016 RS=69.0 N=0.446 ) .ENDS *SRC=DDZ9707T;DI_DDZ9707T;Diodes;Zener 10V-50V; 20.0V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9707T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.7 .MODEL DF D ( IS=3.09p RS=27.6 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.18e-016 RS=69.0 N=0.446 ) .ENDS *SRC=DDZ9708;DI_DDZ9708;Diodes;Zener 10V-50V; 22.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9708 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.6 .MODEL DF D ( IS=9.36p RS=30.8 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.87f RS=92.0 N=0.594 ) .ENDS *SRC=DDZ9708S;DI_DDZ9708S;Diodes;Zener 10V-50V; 22.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9708S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.6 .MODEL DF D ( IS=3.75p RS=28.2 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.49e-016 RS=92.0 N=0.594 ) .ENDS *SRC=DDZ9708T;DI_DDZ9708T;Diodes;Zener 10V-50V; 22.0V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9708T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.6 .MODEL DF D ( IS=2.81p RS=27.3 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.62e-016 RS=92.0 N=0.594 ) .ENDS *SRC=DDZ9709;DI_DDZ9709;Diodes;Zener 10V-50V; 24.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9709 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 23.6 .MODEL DF D ( IS=8.58p RS=30.5 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.72f RS=92.0 N=0.594 ) .ENDS *SRC=DDZ9709S;DI_DDZ9709S;Diodes;Zener 10V-50V; 24.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9709S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 23.6 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87e-016 RS=92.0 N=0.594 ) .ENDS *SRC=DDZ9709T;DI_DDZ9709T;Diodes;Zener 10V-50V; 24.0V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9709T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 23.6 .MODEL DF D ( IS=2.57p RS=27.1 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.15e-016 RS=92.0 N=0.594 ) .ENDS *SRC=DDZ9711;DI_DDZ9711;Diodes;Zener 10V-50V; 27.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9711 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 26.6 .MODEL DF D ( IS=7.63p RS=30.2 N=1.10 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.53f RS=92.0 N=0.594 ) .ENDS *SRC=DDZ9711S;DI_DDZ9711S;Diodes;Zener 10V-50V; 27.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9711S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 26.6 .MODEL DF D ( IS=3.05p RS=27.6 N=1.10 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.10e-016 RS=92.0 N=0.594 ) .ENDS *SRC=DDZ9711T;DI_DDZ9711T;Diodes;Zener 10V-50V; 27.0V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9711T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 26.6 .MODEL DF D ( IS=2.29p RS=26.8 N=1.10 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58e-016 RS=92.0 N=0.594 ) .ENDS *SRC=DDZ9712;DI_DDZ9712;Diodes;Zener 10V-50V; 28.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9712 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.6 .MODEL DF D ( IS=7.36p RS=30.1 N=1.10 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.47f RS=92.0 N=0.594 ) *SRC=DDZ9712S;DI_DDZ9712S;Diodes;Zener 10V-50V; 28.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9712S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.6 .MODEL DF D ( IS=2.94p RS=27.5 N=1.10 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.89e-016 RS=92.0 N=0.594 ) .ENDS *SRC=DDZ9712T;DI_DDZ9712T;Diodes;Zener 10V-50V; 28.0V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9712T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.6 .MODEL DF D ( IS=2.21p RS=26.7 N=1.10 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.41e-016 RS=92.0 N=0.594 ) .ENDS *SRC=DDZ9713;DI_DDZ9713;Diodes;Zener 10V-50V; 30.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9713 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 29.6 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=92.0 N=0.594 ) .ENDS *SRC=DDZ9713S;DI_DDZ9713S;Diodes;Zener 10V-50V; 30.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9713S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 29.6 .MODEL DF D ( IS=2.75p RS=27.3 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49e-016 RS=92.0 N=0.594 ) .ENDS *SRC=DDZ9713T;DI_DDZ9713T;Diodes;Zener 10V-50V; 30.0V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9713T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 29.6 .MODEL DF D ( IS=2.06p RS=26.5 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.12e-016 RS=92.0 N=0.594 ) .ENDS *SRC=DDZ9714;DI_DDZ9714;Diodes;Zener 10V-50V; 33.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9714 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 31.0 .MODEL DF D ( IS=6.24p RS=29.6 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.25f RS=1.35k N=3.00 ) .ENDS *SRC=DDZ9714S;DI_DDZ9714S;Diodes;Zener 10V-50V; 33.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9714S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 31.0 .MODEL DF D ( IS=2.50p RS=27.0 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.99e-016 RS=1.35k N=3.00 ) .ENDS *SRC=DDZ9714T;DI_DDZ9714T;Diodes;Zener 10V-50V; 33.0V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9714T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.9 .MODEL DF D ( IS=1.87p RS=26.2 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.75e-016 RS=1.35k N=3.00 ) .ENDS *SRC=DDZ9715;DI_DDZ9715;Diodes;Zener 10V-50V; 36.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9715 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.9 .MODEL DF D ( IS=5.72p RS=29.4 N=1.10 + CJO=13.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.14f RS=4.45k N=3.00 ) .ENDS *SRC=DDZ9715S;DI_DDZ9715S;Diodes;Zener 10V-50V; 36.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9715S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 34.0 .MODEL DF D ( IS=2.29p RS=26.8 N=1.10 + CJO=13.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58e-016 RS=1.45k N=3.00 ) .ENDS *SRC=DDZ9715T;DI_DDZ9715T;Diodes;Zener 10V-50V; 36.0V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9715T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.9 .MODEL DF D ( IS=1.72p RS=25.9 N=1.10 + CJO=13.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.43e-016 RS=1.45k N=3.00 ) .ENDS *SRC=DDZ9716;DI_DDZ9716;Diodes;Zener 10V-50V; 39.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9716 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.9 .MODEL DF D ( IS=5.28p RS=29.1 N=1.10 + CJO=24.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.06f RS=4.45k N=3.00 ) .ENDS *SRC=DDZ9716S;DI_DDZ9716S;Diodes;Zener 10V-50V; 39.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9716S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.9 .MODEL DF D ( IS=2.11p RS=26.5 N=1.10 + CJO=12.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.23e-016 RS=1.45k N=3.00 ) .ENDS *SRC=DDZ9716T;DI_DDZ9716T;Diodes;Zener 10V-50V; 39.0V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9716T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.9 .MODEL DF D ( IS=1.58p RS=25.7 N=1.10 + CJO=12.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.17e-016 RS=1.45k N=3.00 ) .ENDS *SRC=DDZ9717;DI_DDZ9717;Diodes;Zener 10V-50V; 43.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9717 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 40.8 .MODEL DF D ( IS=4.79p RS=28.9 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.58e-016 RS=6.25k N=3.00 ) .ENDS *SRC=DDZ9717S;DI_DDZ9717S;Diodes;Zener 10V-50V; 43.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9717S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 40.7 .MODEL DF D ( IS=1.92p RS=26.3 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.83e-016 RS=6.25k N=3.00 ) *SRC=DDZ9717T;DI_DDZ9717T;Diodes;Zener 10V-50V; 43.0V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9717T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 40.7 .MODEL DF D ( IS=1.44p RS=25.4 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.87e-016 RS=6.25k N=3.00 ) .ENDS *SRC=DDZ9V1C;DI_DDZ9V1C;Diodes;Zener <=10V; 9.10V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ9V1C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.76 .MODEL DF D ( IS=22.6p RS=33.3 N=1.10 + CJO=41.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.53f RS=4.11 N=3.00 ) .ENDS *SRC=DDZ9V1CS;DI_DDZ9V1CS;Diodes;Zener <=10V; 9.10V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ9V1CS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.68 .MODEL DF D ( IS=9.05p RS=30.7 N=1.10 + CJO=41.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.81f RS=4.11 N=3.00 ) .ENDS *SRC=DDZX10C;DI_DDZX10C;Diodes;Zener <=10V; 10.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX10C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.61 .MODEL DF D ( IS=12.4p RS=31.6 N=1.10 + CJO=39.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.47f RS=4.11 N=3.00 ) .ENDS *SRC=DDZX11C;DI_DDZX11C;Diodes;Zener 10V-50V; 11.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX11C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.74 .MODEL DF D ( IS=11.2p RS=31.3 N=1.10 + CJO=33.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.25f RS=2.30 N=2.97 ) .ENDS *SRC=DDZX12C;DI_DDZX12C;Diodes;Zener 10V-50V; 12.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX12C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.69 .MODEL DF D ( IS=10.3p RS=31.0 N=1.10 + CJO=32.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.06f RS=4.23 N=3.00 ) .ENDS *SRC=DDZX13B;DI_DDZX13B;Diodes;Zener 10V-50V; 13.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX13B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=9.51p RS=30.8 N=1.10 + CJO=26.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.90f RS=6.23 N=3.00 ) .ENDS *SRC=DDZX14;DI_DDZX14;Diodes;Zener 10V-50V; 14.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX14 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 11.6 .MODEL DF D ( IS=8.83p RS=30.6 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.77f RS=8.23 N=3.00 ) .ENDS *SRC=DDZX15;DI_DDZX15;Diodes;Zener 10V-50V; 15.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX15 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.6 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.65f RS=10.2 N=3.00 ) .ENDS *SRC=DDZX16;DI_DDZX16;Diodes;Zener 10V-50V; 16.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX16 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.6 .MODEL DF D ( IS=7.72p RS=30.2 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.55f RS=10.2 N=3.00 ) .ENDS *SRC=DDZX18C;DI_DDZX18C;Diodes;Zener 10V-50V; 18.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX18C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.5 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=21.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=15.2 N=3.00 ) .ENDS *SRC=DDZX20C;DI_DDZX20C;Diodes;Zener 10V-50V; 20.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX20C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.5 .MODEL DF D ( IS=6.18p RS=29.6 N=1.10 + CJO=20.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.24f RS=20.2 N=3.00 ) .ENDS *SRC=DDZX22D;DI_DDZX22D;Diodes;Zener 10V-50V; 22.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX22D 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.7 .MODEL DF D ( IS=5.62p RS=29.3 N=1.10 + CJO=18.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.12f RS=14.5 N=3.00 ) .ENDS *SRC=DDZX24C;DI_DDZX24C;Diodes;Zener 10V-50V; 24.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX24C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.6 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.03f RS=19.5 N=3.00 ) .ENDS *SRC=DDZX27D;DI_DDZX27D;Diodes;Zener 10V-50V; 27.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX27D 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.6 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.16e-016 RS=29.5 N=3.00 ) .ENDS *SRC=DDZX30D;DI_DDZX30D;Diodes;Zener 10V-50V; 30.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX30D 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.5 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24e-016 RS=39.5 N=3.00 ) .ENDS *SRC=DDZX33;DI_DDZX33;Diodes;Zener 10V-50V; 33.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX33 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.4 .MODEL DF D ( IS=3.75p RS=28.2 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.49e-016 RS=59.5 N=3.00 ) .ENDS *SRC=DDZX36;DI_DDZX36;Diodes;Zener 10V-50V; 36.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX36 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.4 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10 + CJO=23.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87e-016 RS=69.5 N=3.00 ) .ENDS *SRC=DDZX39F;DI_DDZX39F;Diodes;Zener 10V-50V; 39.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX39 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.3 .MODEL DF D ( IS=3.17p RS=27.7 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.34e-016 RS=69.5 N=3.00 ) .ENDS *SRC=DDZX43;DI_DDZX43;Diodes;Zener 10V-50V; 43.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX43 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 40.3 .MODEL DF D ( IS=2.87p RS=27.4 N=1.10 + CJO=20.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.75e-016 RS=74.5 N=3.00 ) .ENDS *SRC=DDZX5V1B;DI_DDZX5V1B;Diodes;Zener <=10V; 5.10V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX5V1B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.58 .MODEL DF D ( IS=24.2p RS=33.5 N=1.10 + CJO=119p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.85f RS=13.1 N=3.00 ) .ENDS *SRC=DDZX5V6B;DI_DDZX5V6B;Diodes;Zener <=10V; 5.60V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX5V6B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.19 .MODEL DF D ( IS=22.1p RS=33.2 N=1.10 + CJO=106p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.41f RS=7.11 N=3.00 ) .ENDS *SRC=DDZX6V2B;DI_DDZX6V2B;Diodes;Zener <=10V; 6.20V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX6V2B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.87 .MODEL DF D ( IS=19.9p RS=32.9 N=1.10 + CJO=80.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.99f RS=3.11 N=3.00 ) .ENDS *SRC=DDZX6V8C;DI_DDZX6V8C;Diodes;Zener <=10V; 6.80V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX6V8C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 4.52 .MODEL DF D ( IS=18.2p RS=32.7 N=1.10 + CJO=72.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.64f RS=1.15 N=2.97 ) .ENDS *SRC=DDZX7V5C;DI_DDZX7V5C;Diodes;Zener <=10V; 7.50V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX7V5C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.17 .MODEL DF D ( IS=16.5p RS=32.4 N=1.10 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.30f RS=2.12 N=3.00 ) .ENDS *SRC=DDZX8V2C;DI_DDZX8V2C;Diodes;Zener <=10V; 8.20V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX8V2C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.82 .MODEL DF D ( IS=15.1p RS=32.1 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.01f RS=4.11 N=3.00 ) .ENDS *SRC=DDZX9V1C;DI_DDZX9V1C;Diodes;Zener <=10V; 9.10V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX9V1C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.72 .MODEL DF D ( IS=13.6p RS=31.8 N=1.10 + CJO=41.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.72f RS=4.11 N=3.00 ) .ENDS *SRC=DFLZ8V2;DI_DFLZ8V2;Diodes;Zener <=10V; 8.20V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ8V2 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.87 .MODEL DF D ( IS=50.2p RS=0.801 N=1.10 + CJO=767p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=10.0f RS=0.230 N=2.97 ) *SRC=DFLZ9V1;DI_DFLZ9V1;Diodes;Zener <=10V; 9.10V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ9V1 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.96 .MODEL DF D ( IS=45.3p RS=0.786 N=1.10 + CJO=688p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.05f RS=0.230 N=1.49 ) *SRC=DZ23C10;DI_DZ23C10;Diodes;Zener <=10V; 10.0V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C10 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.81 .MODEL DF D ( IS=14.4p RS=32.0 N=1.10 + CJO=24.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.88f RS=4.60 N=2.97 ) *SRC=DZ23C11;DI_DZ23C11;Diodes;Zener 10V-50V; 11.0V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C11 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.80 .MODEL DF D ( IS=13.1p RS=31.7 N=1.10 + CJO=45.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.62f RS=4.60 N=2.97 ) *SRC=DZ23C12;DI_DZ23C12;Diodes;Zener 10V-50V; 12.0V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C12 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.75 .MODEL DF D ( IS=12.0p RS=31.5 N=1.10 + CJO=42.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.40f RS=9.46 N=3.00 ) *SRC=DZ23C13;DI_DZ23C13;Diodes;Zener 10V-50V; 13.0V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C13 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=11.1p RS=31.3 N=1.10 + CJO=40.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.22f RS=14.5 N=3.00 ) *SRC=DZ23C15;DI_DZ23C15;Diodes;Zener 10V-50V; 15.0V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C15 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=9.61p RS=30.8 N=1.10 + CJO=37.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.92f RS=14.5 N=3.00 ) *SRC=DZ23C16;DI_DZ23C16;Diodes;Zener 10V-50V; 16.0V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C16 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.7 .MODEL DF D ( IS=9.01p RS=30.7 N=1.10 + CJO=35.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.80f RS=24.5 N=3.00 ) *SRC=DZ23C18;DI_DZ23C18;Diodes;Zener 10V-50V; 18.0V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C18 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=8.01p RS=30.3 N=1.10 + CJO=33.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.60f RS=29.5 N=3.00 ) *SRC=DZ23C20;DI_DZ23C20;Diodes;Zener 10V-50V; 20.0V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C20 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.6 .MODEL DF D ( IS=7.21p RS=30.0 N=1.10 + CJO=31.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.44f RS=39.5 N=3.00 ) *SRC=DZ23C22;DI_DZ23C22;Diodes;Zener 10V-50V; 22.0V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C22 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.6 .MODEL DF D ( IS=6.55p RS=29.8 N=1.10 + CJO=30.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.31f RS=39.5 N=3.00 ) *SRC=DZ23C24;DI_DZ23C24;Diodes;Zener 10V-50V; 24.0V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C24 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.5 .MODEL DF D ( IS=6.01p RS=29.5 N=1.10 + CJO=28.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.20f RS=54.5 N=3.00 ) *SRC=DZ23C27;DI_DZ23C27;Diodes;Zener 10V-50V; 27.0V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C27 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.4 .MODEL DF D ( IS=5.34p RS=29.2 N=1.10 + CJO=27.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.07f RS=64.5 N=3.00 ) *SRC=DZ23C2V7;DI_DZ23C2V7;Diodes;Zener <=10V; 2.70V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C2V7 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.190 .MODEL DF D ( IS=53.4p RS=35.7 N=1.10 + CJO=172p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=10.7f RS=84.5 N=3.00 ) *SRC=DZ23C30;DI_DZ23C30;Diodes;Zener 10V-50V; 30.0V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C30 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.4 .MODEL DF D ( IS=4.81p RS=28.9 N=1.10 + CJO=26.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.61e-016 RS=64.5 N=3.00 ) *SRC=DZ23C33;DI_DZ23C33;Diodes;Zener 10V-50V; 33.0V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C33 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.4 .MODEL DF D ( IS=4.37p RS=28.6 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.74e-016 RS=64.5 N=3.00 ) *SRC=DZ23C36;DI_DZ23C36;Diodes;Zener 10V-50V; 36.0V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C36 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.3 .MODEL DF D ( IS=4.01p RS=28.4 N=1.10 + CJO=24.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.01e-016 RS=74.5 N=3.00 ) *SRC=DZ23C39;DI_DZ23C39;Diodes;Zener 10V-50V; 39.0V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C39 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.1 .MODEL DF D ( IS=3.70p RS=28.1 N=1.10 + CJO=23.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.39e-016 RS=114 N=3.00 ) *SRC=DZ23C3V0;DI_DZ23C3V0;Diodes;Zener <=10V; 3.00V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C3V0 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.507 .MODEL DF D ( IS=48.1p RS=35.4 N=1.10 + CJO=147p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.61f RS=79.5 N=3.00 ) *SRC=DZ23C3V3;DI_DZ23C3V3;Diodes;Zener <=10V; 3.30V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C3V3 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.799 .MODEL DF D ( IS=43.7p RS=35.2 N=1.10 + CJO=127p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.74f RS=79.5 N=3.00 ) *SRC=DZ23C3V6;DI_DZ23C3V6;Diodes;Zener <=10V; 3.60V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C3V6 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.12 .MODEL DF D ( IS=40.1p RS=34.9 N=1.10 + CJO=112p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.01f RS=74.5 N=3.00 ) *SRC=DZ23C3V9;DI_DZ23C3V9;Diodes;Zener <=10V; 3.90V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C3V9 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.41 .MODEL DF D ( IS=37.0p RS=34.7 N=1.10 + CJO=99.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.39f RS=74.5 N=3.00 ) *SRC=DZ23C43;DI_DZ23C43;Diodes;Zener 10V-50V; 43.0V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C43 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 40.0 .MODEL DF D ( IS=3.35p RS=27.8 N=1.10 + CJO=22.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.71e-016 RS=134 N=3.00 ) *SRC=DZ23C47;DI_DZ23C47;Diodes;Zener 10V-50V; 47.0V 0.300W Diodes Inc. - *SYM=HZEN .SUBCKT DI_DZ23C47 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 43.9 .MODEL DF D ( IS=3.07p RS=27.6 N=1.10 + CJO=22.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.14e-016 RS=154 N=3.00 ) *SRC=DZ23C4V3;DI_DZ23C4V3;Diodes;Zener <=10V; 4.30V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C4V3 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.80 .MODEL DF D ( IS=33.5p RS=34.4 N=1.10 + CJO=85.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.71f RS=74.5 N=3.00 ) *SRC=DZ23C4V7;DI_DZ23C4V7;Diodes;Zener <=10V; 4.70V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C4V7 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.25 .MODEL DF D ( IS=30.7p RS=34.2 N=1.10 + CJO=74.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.14f RS=64.5 N=3.00 ) *SRC=DZ23C51;DI_DZ23C51;Diodes;Zener >50V; 51.0V 0.300W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DZ23C51 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 48.5 .MODEL DF D ( IS=2.83p RS=1.77 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.65e-016 RS=141 N=3.00 ) *SRC=DZ23C5V1;DI_DZ23C5V1;Diodes;Zener <=10V; 5.10V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C5V1 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.74 .MODEL DF D ( IS=28.3p RS=33.9 N=1.10 + CJO=66.2p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.65f RS=44.5 N=3.00 ) *SRC=DZ23C5V6;DI_DZ23C5V6;Diodes;Zener <=10V; 5.60V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C5V6 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.33 .MODEL DF D ( IS=25.7p RS=33.7 N=1.10 + CJO=57.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.15f RS=24.5 N=3.00 ) *SRC=DZ23C6V2;DI_DZ23C6V2;Diodes;Zener <=10V; 6.20V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C6V2 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.12 .MODEL DF D ( IS=23.3p RS=33.4 N=1.10 + CJO=49.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.65f RS=2.30 N=1.49 ) *SRC=DZ23C6V8;DI_DZ23C6V8;Diodes;Zener <=10V; 6.80V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C6V8 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.18 .MODEL DF D ( IS=21.2p RS=33.1 N=1.10 + CJO=43.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.24f RS=3.45 N=2.23 ) *SRC=DZ23C7V5;DI_DZ23C7V5;Diodes;Zener <=10V; 7.50V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C7V5 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.87 .MODEL DF D ( IS=19.2p RS=32.8 N=1.10 + CJO=37.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.85f RS=3.45 N=2.23 ) *SRC=DZ23C8V2;DI_DZ23C8V2;Diodes;Zener <=10V; 8.20V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C8V2 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.57 .MODEL DF D ( IS=17.6p RS=32.6 N=1.10 + CJO=32.5p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.52f RS=3.45 N=2.23 ) *SRC=DZ23C9V1;DI_DZ23C9V1;Diodes;Zener <=10V; 9.10V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C9V1 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.46 .MODEL DF D ( IS=15.8p RS=32.3 N=1.10 + CJO=27.8p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.17f RS=3.45 N=2.23 ) *SRC=DZL6V8AXV3;DZL6V8AXV3;Diodes;Zener <=10V; 6.80V 0.220W DIODES INC *SYM=HZEN .SUBCKT DZL6V8AXV3 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.15 .MODEL DF D ( IS=13.3p RS=31.8 N=1.10 + CJO=65.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.67f RS=3.45 N=2.23 ) .ENDS *DIODES_INC_SPICE_MODEL ZENER *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=29Apr2013 *VERSION=2 .SUBCKT MMSZ5221B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.65 .MODEL DF D ( IS=25.1p RS=33.6 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=30f RS=3.8 N=.9 ) .ENDS * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *SRC=MMBZ5221BS;DI_MMBZ5221BS;Diodes;Zener <=10V; 2.40V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5221BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=34.3p RS=34.5 N=1.10 + CJO=340p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87f RS=26.1 N=3.00 ) *SRC=MMBZ5221BT;DI_MMBZ5221BT;Diodes;Zener <=10V; 2.40V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5221BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=25.7p RS=33.7 N=1.10 + CJO=205p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.15f RS=26.1 N=3.00 ) *SRC=MMBZ5221BTS;DI_MMBZ5221BTS;Diodes;Zener <=10V; 2.40V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5221BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=34.3p RS=34.5 N=1.10 + CJO=340p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87f RS=26.1 N=3.00 ) *SRC=MMBZ5221BW;DI_MMBZ5221BW;Diodes;Zener <=10V; 2.40V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5221BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=34.3p RS=34.5 N=1.10 + CJO=205p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87f RS=26.1 N=3.00 ) *SRC=MMBZ5222B;MMBZ5222B;Diodes;Zener <=10V; 2.50V 0.350W DIODES Zener *SYM=HZEN .SUBCKT MMBZ5222B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=57.7p RS=36.0 N=1.10 + CJO=255p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=11.5f RS=26.1 N=3.00 ) .ENDS *SRC=MMBZ5223B;DI_MMBZ5223B;Diodes;Zener <=10V; 2.70V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5223B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=53.4p RS=35.7 N=1.10 + CJO=172p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=10.7f RS=26.1 N=3.00 ) .ENDS *SRC=MMBZ5223BS;DI_MMBZ5223BS;Diodes;Zener <=10V; 2.70V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5223BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=30.5p RS=34.1 N=1.10 + CJO=275p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.10f RS=26.1 N=3.00 ) *SRC=MMBZ5223BT;DI_MMBZ5223BT;Diodes;Zener <=10V; 2.70V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5223BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=22.9p RS=33.3 N=1.10 + CJO=172p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58f RS=26.1 N=3.00 ) *SRC=MMBZ5223BTS;DI_MMBZ5223BTS;Diodes;Zener <=10V; 2.70V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5223BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=30.5p RS=34.1 N=1.10 + CJO=275p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.10f RS=26.1 N=3.00 ) *SRC=MMBZ5258BS;DI_MMBZ5258BS;Diodes;Zener 10V-50V; 36.0V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5258BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.5 .MODEL DF D ( IS=2.29p RS=26.8 N=1.10 + CJO=38.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58e-016 RS=47.1 N=3.00 ) *SRC=MMBZ5258BT;DI_MMBZ5258BT;Diodes;Zener 10V-50V; 36.0V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5258BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.5 .MODEL DF D ( IS=1.72p RS=25.9 N=1.10 + CJO=24.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.43e-016 RS=47.1 N=3.00 ) *SRC=MMBZ5258BTS;DI_MMBZ5258BTS;Diodes;Zener 10V-50V; 36.0V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5258BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.5 .MODEL DF D ( IS=2.29p RS=26.8 N=1.10 + CJO=38.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58e-016 RS=47.1 N=3.00 ) *SRC=MMBZ5258BW;DI_MMBZ5258BW;Diodes;Zener 10V-50V; 36.0V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5258BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.5 .MODEL DF D ( IS=2.29p RS=26.8 N=1.10 + CJO=24.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58e-016 RS=47.1 N=3.00 ) *SRC=MMBZ5259B;DI_MMBZ5259B;Diodes;Zener 10V-50V; 39.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5259B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 35.1 .MODEL DF D ( IS=3.70p RS=28.1 N=1.10 + CJO=23.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.39e-016 RS=76.1 N=3.00 ) .ENDS *SRC=MMBZ5259BS;DI_MMBZ5259BS;Diodes;Zener 10V-50V; 39.0V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5259BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.5 .MODEL DF D ( IS=2.11p RS=26.5 N=1.10 + CJO=37.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.23e-016 RS=55.7 N=3.00 ) *SRC=MMBZ5259BT;DI_MMBZ5259BT;Diodes;Zener 10V-50V; 39.0V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5259BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.5 .MODEL DF D ( IS=1.58p RS=25.7 N=1.10 + CJO=23.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.17e-016 RS=55.7 N=3.00 ) *SRC=MMBZ5259BTS;DI_MMBZ5259BTS;Diodes;Zener 10V-50V; 39.0V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5259BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.5 .MODEL DF D ( IS=2.11p RS=26.5 N=1.10 + CJO=37.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.23e-016 RS=55.7 N=3.00 ) *DIODES_INC_SPICE_MODEL ZENER *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=29Apr2013 *VERSION=2 .SUBCKT MMSZ5221B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.65 .MODEL DF D ( IS=25.1p RS=33.6 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=30f RS=3.8 N=.9 ) .ENDS * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *SRC=DDZ10BSF;DDZ10BSF;Diodes;Zener <=10V; 9.66V 0.500W DIODES ZENER DIODE *SYM=HZEN .SUBCKT DDZ10BSF 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.80 .MODEL DF D ( IS=21.3p RS=33.1 N=1.10 + CJO=41.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.27f RS=0.437 N=1.13 ) .ENDS *SRC=DDZ11BSF;DDZ11BSF;Diodes;Zener 10V-50V; 10.8V 0.500W DIODES ZENER DIODE *SYM=HZEN .SUBCKT DDZ11BSF 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.2 .MODEL DF D ( IS=19.1p RS=32.8 N=1.10 + CJO=36.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.81f RS=0.582 N=0.752 ) .ENDS *SRC=DDZ12BSF;DDZ12BSF;Diodes;Zener 10V-50V; 11.7V 0.500W DIODES ZENER DIODE *SYM=HZEN .SUBCKT DDZ12BSF 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 11.2 .MODEL DF D ( IS=17.6p RS=32.6 N=1.10 + CJO=34.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.52f RS=0.527 N=0.681 ) .ENDS *SRC=DDZ27DSF;DI_DDZ27DSF;Diodes;Zener 10V-50V; 27.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ27D 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.6 .MODEL DF D ( IS=7.63p RS=30.2 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.53f RS=29.5 N=3.00 ) .ENDS * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=23/12/2014 *VERSION=1 .model 1SMB5929B D(IS=1n RS=0.1 CJO=1800p M=0.5 VJ=0.4 ISR=.008u N=1.05 IKF=10u BV=15 NBV=10 IBV=25m TT=40n EG=.84 TRS1=.1m) * (c) 2014 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * .SIMULATOR DEFAULT *SRC= D3Z5V1BF; D3Z5V1BF;Diodes;Zener <=10V; 5.09V 0.500W DIODES Zener *SYM=HZEN .SUBCKT D3Z5V1BF 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.66 .MODEL DF D ( IS=40.5p RS=1.92 N=1.10 + CJO=30.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.09f RS=64.5 N=3.00 ) .ENDS *TITLE=GDZ5V1LP3 *DATE=21/11/2013 *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *VERSION=1 .model GDZ5V1LP3 D(IS=.21f RS=0.15 CJO=17p M=0.37 VJ=0.7 N=1 IKF=5m ISR=.05n + BV=5 IBV=100u TT=30n EG=1.12 TRS1=.1m) * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *SRC=DFLZ5V1Q;DI_DFLZ5V1Q;Diodes;Zener <=10V; 5.10V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ5V1Q 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.69 .MODEL DF D ( IS=80.8p RS=0.869 N=1.10 + CJO=1.80n VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=16.2f RS=1.22 N=3.00 ) *SRC=PD3Z284C4V7;PD3Z284C4V7;Diodes;Zener <=10V; 4.70V 0.250W DIODES ZENER DIODE *SYM=HZEN .SUBCKT PD3Z284C4V7 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.22 .MODEL DF D ( IS=21.9p RS=9.72 N=1.10 + CJO=103p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.38f RS=64.5 N=3.00 ) .ENDS *SRC=BZT52C51;DI_BZT52C51;Diodes;Zener >50V; 51.0V 0.410W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_BZT52C51 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 48.3 .MODEL DF D ( IS=3.31p RS=1.45 N=1.10 + CJO=24.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.62e-016 RS=84.5 N=3.00 ) .ENDS *SRC=BZT52C5V1LP;DI_BZT52C5V1LP;Diodes;Zener <=10V; 5.10V 0.250W Diodes Inc. QFN Zener *SYM=HZEN .SUBCKT DI_BZT52C5V1LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.71 .MODEL DF D ( IS=20.2p RS=33.0 N=1.10 + CJO=132p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.04f RS=44.5 N=3.00 ) .ENDS *SRC=MMBZ5223BW;DI_MMBZ5223BW;Diodes;Zener <=10V; 2.70V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5223BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=30.5p RS=34.1 N=1.10 + CJO=172p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.10f RS=26.1 N=3.00 ) *DIODES_INC_SPICE_MODEL ZENER *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=29Apr2013 *VERSION=2 .SUBCKT MMSZ5225B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.3 .MODEL DF D ( IS=25.1p RS=33.6 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=30f RS=3.8 N=.9 ) .ENDS * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *SRC=MMBZ5225BS;DI_MMBZ5225BS;Diodes;Zener <=10V; 3.00V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5225BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.230 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10 + CJO=240p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49f RS=26.1 N=3.00 ) *SRC=MMBZ5225BT;DI_MMBZ5225BT;Diodes;Zener <=10V; 3.00V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5225BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.208 .MODEL DF D ( IS=20.6p RS=33.0 N=1.10 + CJO=147p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.12f RS=26.1 N=3.00 ) *SRC=MMBZ5225BTS;DI_MMBZ5225BTS;Diodes;Zener <=10V; 3.00V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5225BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.230 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10 + CJO=240p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49f RS=26.1 N=3.00 ) *SRC=MMBZ5225BW;DI_MMBZ5225BW;Diodes;Zener <=10V; 3.00V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5225BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.230 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10 + CJO=147p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49f RS=26.1 N=3.00 ) *DIODES_INC_SPICE_MODEL ZENER *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=29Apr2013 *VERSION=2 .SUBCKT MMSZ5226B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.6 .MODEL DF D ( IS=25.1p RS=33.6 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=30f RS=3.8 N=.9 ) .ENDS * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *SRC=MMBZ5226BS;DI_MMBZ5226BS;Diodes;Zener <=10V; 3.30V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5226BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.563 .MODEL DF D ( IS=25.0p RS=33.6 N=1.10 + CJO=230p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.99f RS=24.1 N=3.00 ) *SRC=MMBZ5226BT;DI_MMBZ5226BT;Diodes;Zener <=10V; 3.30V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5226BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.541 .MODEL DF D ( IS=18.7p RS=32.7 N=1.10 + CJO=127p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.75f RS=24.1 N=3.00 ) *SRC=MMBZ5226BTS;DI_MMBZ5226BTS;Diodes;Zener <=10V; 3.30V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5226BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.563 .MODEL DF D ( IS=25.0p RS=33.6 N=1.10 + CJO=230p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMBZ5226BW;DI_MMBZ5226BW;Diodes;Zener <=10V; 3.30V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5226BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.563 .MODEL DF D ( IS=25.0p RS=33.6 N=1.10 + CJO=127p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.99f RS=24.1 N=3.00 ) *DIODES_INC_SPICE_MODEL ZENER *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=29Apr2013 *VERSION=2 .SUBCKT MMSZ5227B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.9 .MODEL DF D ( IS=25.1p RS=33.6 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=30f RS=3.8 N=.9 ) .ENDS * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *SRC=MMBZ5227BS;DI_MMBZ5227BS;Diodes;Zener <=10V; 3.60V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5227BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.936 .MODEL DF D ( IS=22.9p RS=33.3 N=1.10 + CJO=190p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58f RS=20.1 N=3.00 ) *SRC=MMBZ5227BT;DI_MMBZ5227BT;Diodes;Zener <=10V; 3.60V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5227BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.914 .MODEL DF D ( IS=17.2p RS=32.5 N=1.10 + CJO=112p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.43f RS=20.1 N=3.00 ) *SRC=MMBZ5227BTS;DI_MMBZ5227BTS;Diodes;Zener <=10V; 3.60V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5227BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.936 .MODEL DF D ( IS=22.9p RS=33.3 N=1.10 + CJO=190p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58f RS=20.1 N=3.00 ) *SRC=MMBZ5227BW;DI_MMBZ5227BW;Diodes;Zener <=10V; 3.60V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5227BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.936 .MODEL DF D ( IS=22.9p RS=33.3 N=1.10 + CJO=112p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58f RS=20.1 N=3.00 ) *SRC=MMBZ5228B;DI_MMBZ5228B;Diodes;Zener <=10V; 3.90V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5228B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.29 .MODEL DF D ( IS=37.0p RS=34.7 N=1.10 + CJO=99.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.39f RS=19.1 N=3.00 ) .ENDS *SRC=MMBZ5228BS;DI_MMBZ5228BS;Diodes;Zener <=10V; 3.90V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5228BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.25 .MODEL DF D ( IS=21.1p RS=33.1 N=1.10 + CJO=180p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.23f RS=19.1 N=3.00 ) *SRC=MMBZ5228BT;DI_MMBZ5228BT;Diodes;Zener <=10V; 3.90V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5228BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.23 .MODEL DF D ( IS=15.8p RS=32.3 N=1.10 + CJO=99.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.17f RS=19.1 N=3.00 ) *SRC=MMBZ5228BTS;DI_MMBZ5228BTS;Diodes;Zener <=10V; 3.90V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5228BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.25 .MODEL DF D ( IS=21.1p RS=33.1 N=1.10 + CJO=180p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.23f RS=19.1 N=3.00 ) *SRC=MMBZ5228BW;DI_MMBZ5228BW;Diodes;Zener <=10V; 3.90V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5228BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.25 .MODEL DF D ( IS=21.1p RS=33.1 N=1.10 + CJO=99.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.23f RS=19.1 N=3.00 ) *SRC=MMBZ5229B;DI_MMBZ5229B;Diodes;Zener <=10V; 4.30V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5229B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.71 .MODEL DF D ( IS=33.5p RS=34.4 N=1.10 + CJO=85.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.71f RS=18.1 N=3.00 ) .ENDS *SRC=MMBZ5229BS;DI_MMBZ5229BS;Diodes;Zener <=10V; 4.30V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5229BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.66 .MODEL DF D ( IS=19.2p RS=32.8 N=1.10 + CJO=170p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.83f RS=18.1 N=3.00 ) *SRC=MMBZ5229BT;DI_MMBZ5229BT;Diodes;Zener <=10V; 4.30V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5229BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.64 .MODEL DF D ( IS=14.4p RS=32.0 N=1.10 + CJO=85.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.87f RS=18.1 N=3.00 ) *SRC=MMBZ5229BTS;DI_MMBZ5229BTS;Diodes;Zener <=10V; 4.30V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5229BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.66 .MODEL DF D ( IS=19.2p RS=32.8 N=1.10 + CJO=170p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.83f RS=18.1 N=3.00 ) *SRC=MMBZ5229BW;DI_MMBZ5229BW;Diodes;Zener <=10V; 4.30V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5229BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.66 .MODEL DF D ( IS=19.2p RS=32.8 N=1.10 + CJO=85.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.83f RS=18.1 N=3.00 ) *SRC=MMBZ5230B;DI_MMBZ5230B;Diodes;Zener <=10V; 4.70V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5230B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.16 .MODEL DF D ( IS=30.7p RS=34.2 N=1.10 + CJO=74.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.14f RS=15.1 N=3.00 ) .ENDS *SRC=MMBZ5230BS;DI_MMBZ5230BS;Diodes;Zener <=10V; 4.70V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5230BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.12 .MODEL DF D ( IS=17.5p RS=32.6 N=1.10 + CJO=160p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.51f RS=15.1 N=3.00 ) *SRC=MMBZ5230BT;DI_MMBZ5230BT;Diodes;Zener <=10V; 4.70V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5230BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.09 .MODEL DF D ( IS=13.1p RS=31.7 N=1.10 + CJO=74.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.63f RS=15.1 N=3.00 ) *SRC=MMBZ5230BTS;DI_MMBZ5230BTS;Diodes;Zener <=10V; 4.70V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5230BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.12 .MODEL DF D ( IS=17.5p RS=32.6 N=1.10 + CJO=160p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.51f RS=15.1 N=3.00 ) *SRC=MMBZ5230BW;DI_MMBZ5230BW;Diodes;Zener <=10V; 4.70V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5230BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.12 .MODEL DF D ( IS=17.5p RS=32.6 N=1.10 + CJO=74.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.51f RS=15.1 N=3.00 ) *SRC=MMBZ5231B;DI_MMBZ5231B;Diodes;Zener <=10V; 5.10V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5231B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.59 .MODEL DF D ( IS=28.3p RS=33.9 N=1.10 + CJO=66.2p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.65f RS=13.1 N=3.00 ) .ENDS *SRC=MMBZ5231BS;DI_MMBZ5231BS;Diodes;Zener <=10V; 5.10V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5231BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.55 .MODEL DF D ( IS=16.2p RS=32.3 N=1.10 + CJO=145p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.23f RS=13.1 N=3.00 ) *SRC=MMBZ5231BT;DI_MMBZ5231BT;Diodes;Zener <=10V; 5.10V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5231BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.53 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10 + CJO=66.2p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.42f RS=13.1 N=3.00 ) *SRC=MMBZ5231BTS;DI_MMBZ5231BTS;Diodes;Zener <=10V; 5.10V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5231BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.55 .MODEL DF D ( IS=16.2p RS=32.3 N=1.10 + CJO=145p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.23f RS=13.1 N=3.00 ) *SRC=MMBZ5231BW;DI_MMBZ5231BW;Diodes;Zener <=10V; 5.10V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5231BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.55 .MODEL DF D ( IS=16.2p RS=32.3 N=1.10 + CJO=66.2p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.23f RS=13.1 N=3.00 ) *SRC=MMBZ5232B;DI_MMBZ5232B;Diodes;Zener <=10V; 5.60V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5232B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.21 .MODEL DF D ( IS=25.7p RS=33.7 N=1.10 + CJO=57.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.15f RS=7.11 N=3.00 ) .ENDS *SRC=MMBZ5232BS;DI_MMBZ5232BS;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5232BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.16 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10 + CJO=130p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.94f RS=7.11 N=3.00 ) *SRC=MMBZ5232BT;DI_MMBZ5232BT;Diodes;Zener <=10V; 5.60V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5232BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.14 .MODEL DF D ( IS=11.0p RS=31.2 N=1.10 + CJO=57.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.21f RS=7.11 N=3.00 ) *SRC=MMBZ5232BTS;DI_MMBZ5232BTS;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5232BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.16 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10 + CJO=130p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.94f RS=7.11 N=3.00 ) *SRC=MMBZ5232BW;DI_MMBZ5232BW;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5232BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.16 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10 + CJO=57.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.94f RS=7.11 N=3.00 ) *SRC=MMBZ5233B;DI_MMBZ5233B;Diodes;Zener <=10V; 6.00V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5233B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.68 .MODEL DF D ( IS=24.0p RS=33.5 N=1.10 + CJO=51.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.81f RS=3.11 N=3.00 ) .ENDS *SRC=MMBZ5233BS;DI_MMBZ5233BS;Diodes;Zener <=10V; 6.00V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5233BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.64 .MODEL DF D ( IS=13.7p RS=31.9 N=1.10 + CJO=125p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.75f RS=3.11 N=3.00 ) *SRC=MMBZ5233BTS;DI_MMBZ5233BTS;Diodes;Zener <=10V; 6.00V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5233BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.64 .MODEL DF D ( IS=13.7p RS=31.9 N=1.10 + CJO=125p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.75f RS=3.11 N=3.00 ) *SRC=MMBZ5234B;DI_MMBZ5234B;Diodes;Zener <=10V; 6.20V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5234B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.88 .MODEL DF D ( IS=23.3p RS=33.4 N=1.10 + CJO=49.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.65f RS=3.11 N=3.00 ) .ENDS *SRC=MMBZ5234BS;DI_MMBZ5234BS;Diodes;Zener <=10V; 6.20V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5234BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.83 .MODEL DF D ( IS=13.3p RS=31.8 N=1.10 + CJO=120p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.66f RS=3.11 N=3.00 ) *SRC=MMBZ5234BT;DI_MMBZ5234BT;Diodes;Zener <=10V; 6.20V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5234BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.81 .MODEL DF D ( IS=9.97p RS=31.0 N=1.10 + CJO=49.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.99f RS=3.11 N=3.00 ) *SRC=MMBZ5234BTS;DI_MMBZ5234BTS;Diodes;Zener <=10V; 6.20V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5234BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.83 .MODEL DF D ( IS=13.3p RS=31.8 N=1.10 + CJO=120p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.66f RS=3.11 N=3.00 ) *SRC=MMBZ5234BW;DI_MMBZ5234BW;Diodes;Zener <=10V; 6.20V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5234BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.83 .MODEL DF D ( IS=13.3p RS=31.8 N=1.10 + CJO=49.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.66f RS=3.11 N=3.00 ) *SRC=MMBZ5235B;DI_MMBZ5235B;Diodes;Zener <=10V; 6.80V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5235B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 4.53 .MODEL DF D ( IS=21.2p RS=33.1 N=1.10 + CJO=43.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.24f RS=1.15 N=2.97 ) .ENDS *SRC=MMBZ5235BS;DI_MMBZ5235BS;Diodes;Zener <=10V; 6.80V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5235BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 4.49 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10 + CJO=110p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.42f RS=1.15 N=2.97 ) *SRC=MMBZ5235BT;DI_MMBZ5235BT;Diodes;Zener <=10V; 6.80V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5235BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 4.47 .MODEL DF D ( IS=9.09p RS=30.7 N=1.10 + CJO=43.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.82f RS=1.15 N=2.97 ) *SRC=MMBZ5235BTS;DI_MMBZ5235BTS;Diodes;Zener <=10V; 6.80V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5235BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 4.49 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10 + CJO=110p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.42f RS=1.15 N=2.97 ) *SRC=MMBZ5235BW;DI_MMBZ5235BW;Diodes;Zener <=10V; 6.80V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5235BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 4.49 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10 + CJO=43.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.42f RS=1.15 N=2.97 ) *SRC=MMBZ5236B;DI_MMBZ5236B;Diodes;Zener <=10V; 7.50V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5236B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.18 .MODEL DF D ( IS=19.2p RS=32.8 N=1.10 + CJO=37.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.85f RS=2.12 N=3.00 ) .ENDS *SRC=MMBZ5236BS;DI_MMBZ5236BS;Diodes;Zener <=10V; 7.50V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5236BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.14 .MODEL DF D ( IS=11.0p RS=31.2 N=1.10 + CJO=95.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.20f RS=2.12 N=3.00 ) *SRC=MMBZ5236BT;DI_MMBZ5236BT;Diodes;Zener <=10V; 7.50V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5236BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.12 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10 + CJO=37.1p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMBZ5236BTS;DI_MMBZ5236BTS;Diodes;Zener <=10V; 7.50V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5236BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.14 .MODEL DF D ( IS=11.0p RS=31.2 N=1.10 + CJO=95.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.20f RS=2.12 N=3.00 ) *SRC=MMBZ5236BW;DI_MMBZ5236BW;Diodes;Zener <=10V; 7.50V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5236BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.14 .MODEL DF D ( IS=11.0p RS=31.2 N=1.10 + CJO=37.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.20f RS=2.12 N=3.00 ) *SRC=MMBZ5237B;DI_MMBZ5237B;Diodes;Zener <=10V; 8.20V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5237B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.84 .MODEL DF D ( IS=17.6p RS=32.6 N=1.10 + CJO=32.5p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.52f RS=4.11 N=3.00 ) .ENDS *SRC=MMBZ5237BS;DI_MMBZ5237BS;Diodes;Zener <=10V; 8.20V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5237BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.79 .MODEL DF D ( IS=10.0p RS=31.0 N=1.10 + CJO=88.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.01f RS=4.11 N=3.00 ) *SRC=MMBZ5237BT;DI_MMBZ5237BT;Diodes;Zener <=10V; 8.20V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5237BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.77 .MODEL DF D ( IS=7.54p RS=30.2 N=1.10 + CJO=32.5p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.51f RS=4.11 N=3.00 ) *SRC=MMBZ5237BTS;DI_MMBZ5237BTS;Diodes;Zener <=10V; 8.20V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5237BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.79 .MODEL DF D ( IS=10.0p RS=31.0 N=1.10 + CJO=88.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.01f RS=4.11 N=3.00 ) *SRC=MMBZ5237BW;DI_MMBZ5237BW;Diodes;Zener <=10V; 8.20V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5237BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.79 .MODEL DF D ( IS=10.0p RS=31.0 N=1.10 + CJO=32.5p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.01f RS=4.11 N=3.00 ) *SRC=MMBZ5238B;DI_MMBZ5238B;Diodes;Zener <=10V; 8.70V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5238B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.33 .MODEL DF D ( IS=16.6p RS=32.4 N=1.10 + CJO=29.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.31f RS=4.11 N=3.00 ) .ENDS *SRC=MMBZ5238BS;DI_MMBZ5238BS;Diodes;Zener <=10V; 8.70V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5238BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.29 .MODEL DF D ( IS=9.47p RS=30.8 N=1.10 + CJO=83.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.89f RS=4.11 N=3.00 ) *SRC=MMBZ5238BTS;DI_MMBZ5238BTS;Diodes;Zener <=10V; 8.70V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5238BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.29 .MODEL DF D ( IS=9.47p RS=30.8 N=1.10 + CJO=83.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.89f RS=4.11 N=3.00 ) *SRC=MMBZ5239B;DI_MMBZ5239B;Diodes;Zener <=10V; 9.10V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5239B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.69 .MODEL DF D ( IS=15.8p RS=32.3 N=1.10 + CJO=27.8p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.17f RS=6.11 N=3.00 ) .ENDS *SRC=MMBZ5239BS;DI_MMBZ5239BS;Diodes;Zener <=10V; 9.10V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5239BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.64 .MODEL DF D ( IS=9.05p RS=30.7 N=1.10 + CJO=80.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.81f RS=6.11 N=3.00 ) *SRC=MMBZ5239BT;DI_MMBZ5239BT;Diodes;Zener <=10V; 9.10V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5239BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.62 .MODEL DF D ( IS=6.79p RS=29.9 N=1.10 + CJO=27.8p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.36f RS=6.11 N=3.00 ) *SRC=MMBZ5239BTS;DI_MMBZ5239BTS;Diodes;Zener <=10V; 9.10V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5239BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.64 .MODEL DF D ( IS=9.05p RS=30.7 N=1.10 + CJO=80.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.81f RS=6.11 N=3.00 ) *SRC=MMBZ5239BW;DI_MMBZ5239BW;Diodes;Zener <=10V; 9.10V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5239BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.64 .MODEL DF D ( IS=9.05p RS=30.7 N=1.10 + CJO=27.8p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.81f RS=6.11 N=3.00 ) *SRC=MMBZ5240B;DI_MMBZ5240B;Diodes;Zener <=10V; 10.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5240B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.44 .MODEL DF D ( IS=14.4p RS=32.0 N=1.10 + CJO=24.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.88f RS=13.1 N=3.00 ) .ENDS *SRC=MMBZ5240BS;DI_MMBZ5240BS;Diodes;Zener <=10V; 10.0V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5240BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.40 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10 + CJO=77.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.65f RS=13.1 N=3.00 ) *SRC=MMBZ5240BT;DI_MMBZ5240BT;Diodes;Zener <=10V; 10.0V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5240BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.37 .MODEL DF D ( IS=6.18p RS=29.6 N=1.10 + CJO=24.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.24f RS=13.1 N=3.00 ) *SRC=MMBZ5240BTS;DI_MMBZ5240BTS;Diodes;Zener <=10V; 10.0V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5240BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.40 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10 + CJO=77.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.65f RS=13.1 N=3.00 ) *SRC=MMBZ5240BW;DI_MMBZ5240BW;Diodes;Zener <=10V; 10.0V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5240BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.40 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10 + CJO=24.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.65f RS=13.1 N=3.00 ) *SRC=MMBZ5241B;DI_MMBZ5241B;Diodes;Zener 10V-50V; 11.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5241B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.33 .MODEL DF D ( IS=13.1p RS=31.7 N=1.10 + CJO=45.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.62f RS=18.1 N=3.00 ) .ENDS *SRC=MMBZ5241BS;DI_MMBZ5241BS;Diodes;Zener 10V-50V; 11.0V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5241BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.29 .MODEL DF D ( IS=7.49p RS=30.1 N=1.10 + CJO=75.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.50f RS=18.1 N=3.00 ) *SRC=MMBZ5241BT;DI_MMBZ5241BT;Diodes;Zener 10V-50V; 11.0V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5241BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.27 .MODEL DF D ( IS=5.62p RS=29.3 N=1.10 + CJO=45.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.12f RS=18.1 N=3.00 ) *SRC=MMBZ5241BTS;DI_MMBZ5241BTS;Diodes;Zener 10V-50V; 11.0V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5241BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.29 .MODEL DF D ( IS=7.49p RS=30.1 N=1.10 + CJO=75.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.50f RS=18.1 N=3.00 ) *SRC=MMBZ5241BW;DI_MMBZ5241BW;Diodes;Zener 10V-50V; 11.0V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5241BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.29 .MODEL DF D ( IS=7.49p RS=30.1 N=1.10 + CJO=45.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.50f RS=18.1 N=3.00 ) *SRC=MMBZ524B;DI_MMBZ5242B;Diodes;Zener 10V-50V; 12.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5242B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.17 .MODEL DF D ( IS=12.0p RS=31.5 N=1.10 + CJO=42.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.40f RS=26.1 N=3.00 ) .ENDS *SRC=MMBZ5242BS;DI_MMBZ5242BS;Diodes;Zener 10V-50V; 12.0V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5242BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.12 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=74.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=26.1 N=3.00 ) *SRC=MMBZ5242BT;DI_MMBZ5242BT;Diodes;Zener 10V-50V; 12.0V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5242BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.10 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10 + CJO=42.7p VJ=1.00 M=0.330 TT=50.1n ) *SRC=MMBZ5242BTS;DI_MMBZ5242BTS;Diodes;Zener 10V-50V; 12.0V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5242BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.12 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=74.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=26.1 N=3.00 ) *SRC=MMBZ5242BW;DI_MMBZ5242BW;Diodes;Zener 10V-50V; 12.0V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5242BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.12 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=42.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=26.1 N=3.00 ) *SRC=MMBZ5243B;DI_MMBZ5243B;Diodes;Zener 10V-50V; 13.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5243B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.5 .MODEL DF D ( IS=11.1p RS=31.3 N=1.10 + CJO=40.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.22f RS=9.11 N=3.00 ) .ENDS *SRC=MMBZ5243BS;DI_MMBZ5243BS;Diodes;Zener 10V-50V; 13.0V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5243BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=6.34p RS=29.7 N=1.10 + CJO=66.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.27f RS=4.82 N=3.00 ) *SRC=MMBZ5243BT;DI_MMBZ5243BT;Diodes;Zener 10V-50V; 13.0V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5243BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.5 .MODEL DF D ( IS=4.75p RS=28.8 N=1.10 + CJO=40.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.51e-016 RS=21.8 N=3.00 ) *SRC=MMBZ5243BTS;DI_MMBZ5243BTS;Diodes;Zener 10V-50V; 13.0V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5243BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=6.34p RS=29.7 N=1.10 + CJO=66.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.27f RS=4.82 N=3.00 ) *SRC=MMBZ5243BW;DI_MMBZ5243BW;Diodes;Zener 10V-50V; 13.0V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5243BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=6.34p RS=29.7 N=1.10 + CJO=40.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.27f RS=4.82 N=3.00 ) *SRC=MMBZ5244B;DI_MMBZ5244B;Diodes;Zener 10V-50V; 14.0V 0.350W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_MMBZ5244B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 11.7 .MODEL DF D ( IS=10.3p RS=1.77 N=1.10 + CJO=31.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.06f RS=6.37 N=3.00 ) .ENDS *SRC=MMBZ5245B;DI_MMBZ5245B;Diodes;Zener 10V-50V; 15.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5245B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.4 .MODEL DF D ( IS=9.61p RS=30.8 N=1.10 + CJO=37.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.92f RS=12.1 N=3.00 ) .ENDS *SRC=MMBZ5245BS;DI_MMBZ5245BS;Diodes;Zener 10V-50V; 15.0V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5245BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.6 .MODEL DF D ( IS=5.49p RS=29.3 N=1.10 + CJO=60.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.10f RS=6.86 N=3.00 ) *SRC=MMBZ5245BT;DI_MMBZ5245BT;Diodes;Zener 10V-50V; 15.0V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5245BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.4 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10 + CJO=40.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24e-016 RS=28.1 N=3.00 ) *SRC=MMBZ5245BTS;DI_MMBZ5245BTS;Diodes;Zener 10V-50V; 15.0V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5245BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.6 .MODEL DF D ( IS=5.49p RS=29.3 N=1.10 + CJO=60.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.10f RS=6.86 N=3.00 ) *SRC=MMBZ5245BW;DI_MMBZ5245BW;Diodes;Zener 10V-50V; 15.0V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5245BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.6 .MODEL DF D ( IS=5.49p RS=29.3 N=1.10 + CJO=37.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.10f RS=6.86 N=3.00 ) *SRC=MMBZ5246B;DI_MMBZ5246B;Diodes;Zener 10V-50V; 16.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5246B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.4 .MODEL DF D ( IS=9.01p RS=30.7 N=1.10 + CJO=35.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.80f RS=13.1 N=3.00 ) .ENDS *SRC=MMBZ5246BS;DI_MMBZ5246BS;Diodes;Zener 10V-50V; 16.0V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5246BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.6 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10 + CJO=58.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.03f RS=7.04 N=3.00 ) *SRC=MMBZ5246BT;DI_MMBZ5246BT;Diodes;Zener 10V-50V; 16.0V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5246BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.6 .MODEL DF D ( IS=3.86p RS=28.2 N=1.10 + CJO=35.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.73e-016 RS=7.04 N=3.00 ) *SRC=MMBZ5246BTS;DI_MMBZ5246BTS;Diodes;Zener 10V-50V; 16.0V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5246BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.6 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10 + CJO=58.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.03f RS=7.04 N=3.00 ) *SRC=MMBZ5246BW;DI_MMBZ5246BW;Diodes;Zener 10V-50V; 16.0V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5246BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.6 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10 + CJO=35.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.03f RS=7.04 N=3.00 ) *SRC=MMBZ5248B;DI_MMBZ5248B;Diodes;Zener 10V-50V; 18.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5248B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.3 .MODEL DF D ( IS=8.01p RS=30.3 N=1.10 + CJO=33.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.60f RS=17.1 N=3.00 ) .ENDS *SRC=MMBZ5248BS;DI_MMBZ5248BS;Diodes;Zener 10V-50V; 18.0V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5248BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10 + CJO=53.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.16e-016 RS=9.90 N=3.00 ) SRC=MMBZ5248BT;DI_MMBZ5248BT;Diodes;Zener 10V-50V; 18.0V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5248BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10 + CJO=33.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87e-016 RS=9.90 N=3.00 ) .ENDS *SRC=MMBZ5248BTS;DI_MMBZ5248BTS;Diodes;Zener 10V-50V; 18.0V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5248BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10 + CJO=53.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.16e-016 RS=9.90 N=3.00 ) *SRC=MMBZ5248BW;DI_MMBZ5248BW;Diodes;Zener 10V-50V; 18.0V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5248BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10 + CJO=33.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.16e-016 RS=9.90 N=3.00 ) *SRC=MMBZ5250B;DI_MMBZ5250B;Diodes;Zener 10V-50V; 20.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5250B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.2 .MODEL DF D ( IS=7.21p RS=30.0 N=1.10 + CJO=31.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.44f RS=21.1 N=3.00 ) .ENDS *SRC=MMBZ5250BS;DI_MMBZ5250BS;Diodes;Zener 10V-50V; 20.0V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5250BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.6 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10 + CJO=50.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24e-016 RS=12.5 N=3.00 ) *SRC=MMBZ5250BT;DI_MMBZ5250BT;Diodes;Zener 10V-50V; 20.0V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5250BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.6 .MODEL DF D ( IS=3.09p RS=27.6 N=1.10 + CJO=31.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.18e-016 RS=12.5 N=3.00 ) *SRC=MMBZ5250BTS;DI_MMBZ5250BTS;Diodes;Zener 10V-50V; 20.0V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5250BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.6 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10 + CJO=50.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24e-016 RS=12.5 N=3.00 ) *SRC=MMBZ5250BW;DI_MMBZ5250BW;Diodes;Zener 10V-50V; 20.0V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5250BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.6 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10 + CJO=31.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24e-016 RS=12.5 N=3.00 ) *SRC=MMBZ5251B;DI_MMBZ5251B;Diodes;Zener 10V-50V; 22.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5251B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.1 .MODEL DF D ( IS=6.55p RS=29.8 N=1.10 + CJO=30.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.31f RS=25.1 N=3.00 ) .ENDS *SRC=MMBZ5251BS;DI_MMBZ5251BS;Diodes;Zener 10V-50V; 22.0V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5251BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.6 .MODEL DF D ( IS=3.75p RS=28.2 N=1.10 + CJO=48.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.49e-016 RS=15.1 N=3.00 ) *SRC=MMBZ5251BT;DI_MMBZ5251BT;Diodes;Zener 10V-50V; 22.0V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5251BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.6 .MODEL DF D ( IS=2.81p RS=27.3 N=1.10 + CJO=30.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.62e-016 RS=15.1 N=3.00 ) *SRC=MMBZ5251BTS;DI_MMBZ5251BTS;Diodes;Zener 10V-50V; 22.0V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5251BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.6 .MODEL DF D ( IS=3.75p RS=28.2 N=1.10 + CJO=48.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.49e-016 RS=15.1 N=3.00 ) *SRC=MMBZ5251BW;DI_MMBZ5251BW;Diodes;Zener 10V-50V; 22.0V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5251BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.6 .MODEL DF D ( IS=3.75p RS=28.2 N=1.10 + CJO=30.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.49e-016 RS=15.1 N=3.00 ) *SRC=MMBZ5252B;DI_MMBZ5252B;Diodes;Zener 10V-50V; 24.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5252B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.1 .MODEL DF D ( IS=6.01p RS=29.5 N=1.10 + CJO=28.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.20f RS=29.1 N=3.00 ) .ENDS *SRC=MMBZ5252BS;DI_MMBZ5252BS;Diodes;Zener 10V-50V; 24.0V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5252BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.6 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10 + CJO=45.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87e-016 RS=18.1 N=3.00 ) *SRC=MMBZ5252BT;DI_MMBZ5252BT;Diodes;Zener 10V-50V; 24.0V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5252BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.6 .MODEL DF D ( IS=2.57p RS=27.1 N=1.10 + CJO=28.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.15e-016 RS=18.1 N=3.00 ) *SRC=MMBZ5252BTS;DI_MMBZ5252BTS;Diodes;Zener 10V-50V; 24.0V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5252BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.6 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10 + CJO=45.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87e-016 RS=18.1 N=3.00 ) *SRC=MMBZ5252BW;DI_MMBZ5252BW;Diodes;Zener 10V-50V; 24.0V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5252BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.6 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10 + CJO=28.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87e-016 RS=18.1 N=3.00 ) *SRC=MMBZ5254B;DI_MMBZ5254B;Diodes;Zener 10V-50V; 27.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5254B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 23.9 .MODEL DF D ( IS=5.34p RS=29.2 N=1.10 + CJO=27.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.07f RS=37.1 N=3.00 ) .ENDS *SRC=MMBZ5254BS;DI_MMBZ5254BS;Diodes;Zener 10V-50V; 27.0V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5254BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.6 .MODEL DF D ( IS=3.05p RS=27.6 N=1.10 + CJO=42.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.10e-016 RS=25.5 N=3.00 ) *SRC=MMBZ5254BT;DI_MMBZ5254BT;Diodes;Zener 10V-50V; 27.0V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5254BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.5 .MODEL DF D ( IS=2.29p RS=26.8 N=1.10 + CJO=27.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58e-016 RS=25.5 N=3.00 ) *SRC=MMBZ5254BTS;DI_MMBZ5254BTS;Diodes;Zener 10V-50V; 27.0V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5254BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.6 .MODEL DF D ( IS=3.05p RS=27.6 N=1.10 + CJO=42.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.10e-016 RS=25.5 N=3.00 ) *SRC=MMBZ5254BW;DI_MMBZ5254BW;Diodes;Zener 10V-50V; 27.0V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5254BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.6 .MODEL DF D ( IS=3.05p RS=27.6 N=1.10 + CJO=27.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.10e-016 RS=25.5 N=3.00 ) *SRC=MMBZ5255B;DI_MMBZ5255B;Diodes;Zener 10V-50V; 28.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5255B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.8 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10 + CJO=26.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.03f RS=40.1 N=3.00 ) .ENDS *SRC=MMBZ5255BS;DI_MMBZ5255BS;Diodes;Zener 10V-50V; 28.0V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5255BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 25.6 .MODEL DF D ( IS=2.94p RS=27.5 N=1.10 + CJO=41.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.89e-016 RS=26.7 N=3.00 ) *SRC=MMBZ5255BT;DI_MMBZ5255BT;Diodes;Zener 10V-50V; 28.0V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5255BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 25.6 .MODEL DF D ( IS=2.21p RS=26.7 N=1.10 + CJO=26.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.41e-016 RS=26.7 N=3.00 ) *SRC=MMBZ5255BTS;DI_MMBZ5255BTS;Diodes;Zener 10V-50V; 28.0V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5255BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 25.6 .MODEL DF D ( IS=2.94p RS=27.5 N=1.10 + CJO=41.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.89e-016 RS=26.7 N=3.00 ) *SRC=MMBZ5255BW;DI_MMBZ5255BW;Diodes;Zener 10V-50V; 28.0V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5255BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 25.6 .MODEL DF D ( IS=2.94p RS=27.5 N=1.10 + CJO=26.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.89e-016 RS=26.7 N=3.00 ) *SRC=MMBZ5256B;DI_MMBZ5256B;Diodes;Zener 10V-50V; 30.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5256B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 26.7 .MODEL DF D ( IS=4.81p RS=28.9 N=1.10 + CJO=26.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.61e-016 RS=45.1 N=3.00 ) .ENDS *SRC=MMBZ5256BS;DI_MMBZ5256BS;Diodes;Zener 10V-50V; 30.0V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5256BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.6 .MODEL DF D ( IS=2.75p RS=27.3 N=1.10 + CJO=40.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49e-016 RS=30.5 N=3.00 ) *SRC=MMBZ5256BT;DI_MMBZ5256BT;Diodes;Zener 10V-50V; 30.0V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5256BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.5 .MODEL DF D ( IS=2.06p RS=26.5 N=1.10 + CJO=26.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.12e-016 RS=30.5 N=3.00 ) *SRC=MMBZ5256BTS;DI_MMBZ5256BTS;Diodes;Zener 10V-50V; 30.0V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5256BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.6 .MODEL DF D ( IS=2.75p RS=27.3 N=1.10 + CJO=40.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49e-016 RS=30.5 N=3.00 ) *SRC=MMBZ5256BW;DI_MMBZ5256BW;Diodes;Zener 10V-50V; 30.0V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5256BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.6 .MODEL DF D ( IS=2.75p RS=27.3 N=1.10 + CJO=26.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49e-016 RS=30.5 N=3.00 ) *SRC=MMBZ5257B;DI_MMBZ5257B;Diodes;Zener 10V-50V; 33.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5257B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 29.5 .MODEL DF D ( IS=4.37p RS=28.6 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.74e-016 RS=54.1 N=3.00 ) .ENDS *SRC=MMBZ5257BS;DI_MMBZ5257BS;Diodes;Zener 10V-50V; 33.0V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5257BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.6 .MODEL DF D ( IS=2.50p RS=27.0 N=1.10 + CJO=39.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.99e-016 RS=37.6 N=3.00 ) *SRC=MMBZ5257BT;DI_MMBZ5257BT;Diodes;Zener 10V-50V; 33.0V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5257BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.5 .MODEL DF D ( IS=1.87p RS=26.2 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.75e-016 RS=37.6 N=3.00 ) *SRC=MMBZ5257BTS;DI_MMBZ5257BTS;Diodes;Zener 10V-50V; 33.0V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5257BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.6 .MODEL DF D ( IS=2.50p RS=27.0 N=1.10 + CJO=39.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.99e-016 RS=37.6 N=3.00 ) *SRC=MMBZ5257BW;DI_MMBZ5257BW;Diodes;Zener 10V-50V; 33.0V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5257BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.6 .MODEL DF D ( IS=2.50p RS=27.0 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.99e-016 RS=37.6 N=3.00 ) *SRC=MMBZ5258B;DI_MMBZ5258B;Diodes;Zener 10V-50V; 36.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5258B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 32.3 .MODEL DF D ( IS=4.01p RS=28.4 N=1.10 + CJO=24.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.01e-016 RS=66.1 N=3.00 ) .ENDS *SRC=MMBZ5259BW;DI_MMBZ5259BW;Diodes;Zener 10V-50V; 39.0V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5259BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.5 .MODEL DF D ( IS=2.11p RS=26.5 N=1.10 + CJO=23.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.23e-016 RS=55.7 N=3.00 ) *SRC=MMSZ5221BS;DI_MMSZ5221BS;Diodes;Zener <=10V; 2.40V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5221BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=85.8p RS=37.1 N=1.10 + CJO=794p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=17.2f RS=26.1 N=3.00 ) *DIODES_INC_SPICE_MODEL ZENER *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=29Apr2013 *VERSION=2 .SUBCKT MMSZ5223B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2 .MODEL DF D ( IS=25.1p RS=33.6 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=30f RS=3.8 N=.9 ) .ENDS * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *SRC=MMSZ5223BS;DI_MMSZ5223BS;Diodes;Zener <=10V; 2.70V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5223BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.75m .MODEL DF D ( IS=76.3p RS=36.7 N=1.10 + CJO=463p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=15.3f RS=26.1 N=3.00 ) *DIODES_INC_SPICE_MODEL ZENER *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=29Apr2013 *VERSION=2 .SUBCKT MMSZ5225B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.3 .MODEL DF D ( IS=25.1p RS=33.6 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=30f RS=3.8 N=.9 ) .ENDS * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *SRC=MMSZ5225BS;DI_MMSZ5225BS;Diodes;Zener <=10V; 3.00V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5225BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.302 .MODEL DF D ( IS=68.7p RS=36.4 N=1.10 + CJO=397p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=13.7f RS=26.1 N=3.00 ) *DIODES_INC_SPICE_MODEL ZENER *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=29Apr2013 *VERSION=2 .SUBCKT MMSZ5226B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.6 .MODEL DF D ( IS=25.1p RS=33.6 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=30f RS=3.8 N=.9 ) .ENDS * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *SRC=MMSZ5226BS;DI_MMSZ5226BS;Diodes;Zener <=10V; 3.30V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5226BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.634 .MODEL DF D ( IS=62.4p RS=36.2 N=1.10 + CJO=251p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=12.5f RS=24.1 N=3.00 ) *SRC=MMSZ5227BS;DI_MMSZ5227BS;Diodes;Zener <=10V; 3.60V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5227BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.01 .MODEL DF D ( IS=57.2p RS=35.9 N=1.10 + CJO=238p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=11.4f RS=20.1 N=3.00 ) *SRC=MMSZ5228B;DI_MMSZ5228B;Diodes;Zener <=10V; 3.90V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5228B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.32 .MODEL DF D ( IS=52.8p RS=35.7 N=1.10 + CJO=159p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=10.6f RS=19.1 N=3.00 ) *SRC=MMSZ5228BS;DI_MMSZ5228BS;Diodes;Zener <=10V; 3.90V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5228BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.32 .MODEL DF D ( IS=52.8p RS=35.7 N=1.10 + CJO=159p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=10.6f RS=19.1 N=3.00 ) *SRC=MMSZ5229B;DI_MMSZ5229B;Diodes;Zener <=10V; 4.30V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5229B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.73 .MODEL DF D ( IS=47.9p RS=35.4 N=1.10 + CJO=145p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.58f RS=18.1 N=3.00 ) *SRC=MMSZ5229BS;DI_MMSZ5229BS;Diodes;Zener <=10V; 4.30V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5229BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.73 .MODEL DF D ( IS=47.9p RS=35.4 N=1.10 + CJO=145p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.58f RS=18.1 N=3.00 ) *SRC=MMSZ5230B;DI_MMSZ5230B;Diodes;Zener <=10V; 4.70V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5230B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.19 .MODEL DF D ( IS=43.8p RS=35.2 N=1.10 + CJO=139p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.77f RS=15.1 N=3.00 ) *SRC=MMSZ5230BS;DI_MMSZ5230BS;Diodes;Zener <=10V; 4.70V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5230BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.19 .MODEL DF D ( IS=43.8p RS=35.2 N=1.10 + CJO=139p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.77f RS=15.1 N=3.00 ) *SRC=MMSZ5231B;DI_MMSZ5231B;Diodes;Zener <=10V; 5.10V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5231B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.62 .MODEL DF D ( IS=40.4p RS=34.9 N=1.10 + CJO=132p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.08f RS=13.1 N=3.00 ) *SRC=MMSZ5231BS;DI_MMSZ5231BS;Diodes;Zener <=10V; 5.10V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5231BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.62 .MODEL DF D ( IS=40.4p RS=34.9 N=1.10 + CJO=132p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.08f RS=13.1 N=3.00 ) *SRC=MMSZ5232B;DI_MMSZ5232B;Diodes;Zener <=10V; 5.60V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5232B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.23 .MODEL DF D ( IS=36.8p RS=34.7 N=1.10 + CJO=106p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.36f RS=7.11 N=3.00 ) *SRC=MMSZ5232BS;DI_MMSZ5232BS;Diodes;Zener <=10V; 5.60V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5232BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.23 .MODEL DF D ( IS=36.8p RS=34.7 N=1.10 + CJO=106p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.36f RS=7.11 N=3.00 ) *SRC=MMSZ5233B;DI_MMSZ5233B;Diodes;Zener <=10V; 6.00V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5233B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.71 .MODEL DF D ( IS=34.3p RS=34.5 N=1.10 + CJO=83.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87f RS=3.11 N=3.00 ) *SRC=MMSZ5233BS;DI_MMSZ5233BS;Diodes;Zener <=10V; 6.00V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5233BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.71 .MODEL DF D ( IS=34.3p RS=34.5 N=1.10 + CJO=83.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87f RS=3.11 N=3.00 ) *SRC=MMSZ5234B;DI_MMSZ5234B;Diodes;Zener <=10V; 6.20V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5234B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.91 .MODEL DF D ( IS=33.2p RS=34.4 N=1.10 + CJO=79.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.65f RS=3.11 N=3.00 ) *SRC=MMSZ5234BS;DI_MMSZ5234BS;Diodes;Zener <=10V; 6.20V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5234BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.91 .MODEL DF D ( IS=33.2p RS=34.4 N=1.10 + CJO=79.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.65f RS=3.11 N=3.00 ) *SRC=MMSZ5235B;DI_MMSZ5235B;Diodes;Zener <=10V; 6.80V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5235B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 4.56 .MODEL DF D ( IS=30.3p RS=34.1 N=1.10 + CJO=71.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.06f RS=1.15 N=2.97 ) *SRC=MMSZ5235BS;DI_MMSZ5235BS;Diodes;Zener <=10V; 6.80V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5235BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 4.56 .MODEL DF D ( IS=30.3p RS=34.1 N=1.10 + CJO=71.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.06f RS=1.15 N=2.97 ) *SRC=MMSZ5236B;DI_MMSZ5236B;Diodes;Zener <=10V; 7.50V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5236B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.21 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10 + CJO=58.2p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49f RS=2.12 N=3.00 ) *SRC=MMSZ5236BS;DI_MMSZ5236BS;Diodes;Zener <=10V; 7.50V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5236BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.21 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10 + CJO=58.2p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49f RS=2.12 N=3.00 ) *SRC=MMSZ5237B;DI_MMSZ5237B;Diodes;Zener <=10V; 8.20V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5237B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.86 .MODEL DF D ( IS=25.1p RS=33.6 N=1.10 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.02f RS=4.11 N=3.00 ) *SRC=MMSZ5237BS;DI_MMSZ5237BS;Diodes;Zener <=10V; 8.20V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5237BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.86 .MODEL DF D ( IS=25.1p RS=33.6 N=1.10 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.02f RS=4.11 N=3.00 ) *SRC=MMSZ5238B;DI_MMSZ5238B;Diodes;Zener <=10V; 8.70V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5238B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.36 .MODEL DF D ( IS=23.7p RS=33.4 N=1.10 + CJO=51.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.74f RS=4.11 N=3.00 ) *SRC=MMSZ5238BS;DI_MMSZ5238BS;Diodes;Zener <=10V; 8.70V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5238BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.36 .MODEL DF D ( IS=23.7p RS=33.4 N=1.10 + CJO=51.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.74f RS=4.11 N=3.00 ) *SRC=MMSZ5239B;DI_MMSZ5239B;Diodes;Zener <=10V; 9.10V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5239B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.72 .MODEL DF D ( IS=22.6p RS=33.3 N=1.10 + CJO=50.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.53f RS=6.11 N=3.00 ) *SRC=MMSZ5239BS;DI_MMSZ5239BS;Diodes;Zener <=10V; 9.10V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5239BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.72 .MODEL DF D ( IS=22.6p RS=33.3 N=1.10 + CJO=50.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.53f RS=6.11 N=3.00 ) *SRC=MMSZ5240B;DI_MMSZ5240B;Diodes;Zener <=10V; 10.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5240B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.47 .MODEL DF D ( IS=20.6p RS=33.0 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.12f RS=13.1 N=3.00 ) *SRC=MMSZ5240BS;DI_MMSZ5240BS;Diodes;Zener <=10V; 10.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5240BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.47 .MODEL DF D ( IS=20.6p RS=33.0 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.12f RS=13.1 N=3.00 ) *SRC=MMSZ5241B;DI_MMSZ5241B;Diodes;Zener 10V-50V; 11.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5241B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.36 .MODEL DF D ( IS=18.7p RS=32.7 N=1.10 + CJO=32.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.75f RS=18.1 N=3.00 ) *SRC=MMSZ5241BS;DI_MMSZ5241BS;Diodes;Zener 10V-50V; 11.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5241BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.36 .MODEL DF D ( IS=18.7p RS=32.7 N=1.10 + CJO=32.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.75f RS=18.1 N=3.00 ) *SRC=MMSZ5242B;DI_MMSZ5242B;Diodes;Zener 10V-50V; 12.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5242B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.19 .MODEL DF D ( IS=17.2p RS=32.5 N=1.10 + CJO=31.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.43f RS=26.1 N=3.00 ) *SRC=MMSZ5242BS;DI_MMSZ5242BS;Diodes;Zener 10V-50V; 12.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5242BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.19 .MODEL DF D ( IS=17.2p RS=32.5 N=1.10 + CJO=31.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.43f RS=26.1 N=3.00 ) *SRC=MMSZ5243B;DI_MMSZ5243B;Diodes;Zener 10V-50V; 13.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5243B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=15.8p RS=32.3 N=1.10 + CJO=30.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.17f RS=4.82 N=3.00 ) *SRC=MMSZ5243BS;DI_MMSZ5243BS;Diodes;Zener 10V-50V; 13.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5243BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=15.8p RS=32.3 N=1.10 + CJO=30.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.17f RS=4.82 N=3.00 ) *SRC=MMSZ5245B;DI_MMSZ5245B;Diodes;Zener 10V-50V; 15.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5245B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=13.7p RS=31.9 N=1.10 + CJO=28.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.75f RS=6.86 N=3.00 ) *SRC=MMSZ5245BS;DI_MMSZ5245BS;Diodes;Zener 10V-50V; 15.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5245BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=13.7p RS=31.9 N=1.10 + CJO=28.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.75f RS=6.86 N=3.00 ) *SRC=MMSZ5246B;DI_MMSZ5246B;Diodes;Zener 10V-50V; 16.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5246B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.7 .MODEL DF D ( IS=12.9p RS=31.7 N=1.10 + CJO=27.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.58f RS=7.04 N=3.00 ) *SRC=MMSZ5246BS;DI_MMSZ5246BS;Diodes;Zener 10V-50V; 16.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5246BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.7 .MODEL DF D ( IS=12.9p RS=31.7 N=1.10 + CJO=27.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.58f RS=7.04 N=3.00 ) *SRC=MMSZ5248B;DI_MMSZ5248B;Diodes;Zener 10V-50V; 18.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5248B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.7 .MODEL DF D ( IS=11.4p RS=31.3 N=1.10 + CJO=25.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.29f RS=9.90 N=3.00 ) *SRC=MMSZ5248BS;DI_MMSZ5248BS;Diodes;Zener 10V-50V; 18.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5248BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.7 .MODEL DF D ( IS=11.4p RS=31.3 N=1.10 + CJO=25.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.29f RS=9.90 N=3.00 ) *SRC=MMSZ5250B;DI_MMSZ5250B;Diodes;Zener 10V-50V; 20.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5250B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.7 .MODEL DF D ( IS=10.3p RS=31.0 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.06f RS=8.47 N=3.00 ) *SRC=MMSZ5250BS;DI_MMSZ5250BS;Diodes;Zener 10V-50V; 20.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5250BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.7 .MODEL DF D ( IS=10.3p RS=31.0 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.06f RS=8.47 N=3.00 ) *SRC=MMSZ5251B;DI_MMSZ5251B;Diodes;Zener 10V-50V; 22.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5251B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.7 .MODEL DF D ( IS=9.36p RS=30.8 N=1.10 + CJO=18.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.87f RS=15.1 N=3.00 ) *SRC=MMSZ5251BS;DI_MMSZ5251BS;Diodes;Zener 10V-50V; 22.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5251BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.7 .MODEL DF D ( IS=9.36p RS=30.8 N=1.10 + CJO=18.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.87f RS=15.1 N=3.00 ) *SRC=MMSZ5252B;DI_MMSZ5252B;Diodes;Zener 10V-50V; 24.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5252B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.7 .MODEL DF D ( IS=8.58p RS=30.5 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.72f RS=18.1 N=3.00 ) *SRC=MMSZ5252BS;DI_MMSZ5252BS;Diodes;Zener 10V-50V; 24.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5252BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.7 .MODEL DF D ( IS=8.58p RS=30.5 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.72f RS=18.1 N=3.00 ) *SRC=MMSZ5254B;DI_MMSZ5254B;Diodes;Zener 10V-50V; 27.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5254B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.6 .MODEL DF D ( IS=7.63p RS=30.2 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.53f RS=25.5 N=3.00 ) *SRC=MMSZ5254BS;DI_MMSZ5254BS;Diodes;Zener 10V-50V; 27.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5254BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.6 .MODEL DF D ( IS=7.63p RS=30.2 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.53f RS=25.5 N=3.00 ) *SRC=MMSZ5255B;DI_MMSZ5255B;Diodes;Zener 10V-50V; 28.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5255B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 25.6 .MODEL DF D ( IS=7.36p RS=30.1 N=1.10 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.47f RS=26.7 N=3.00 ) *SRC=MMSZ5255BS;DI_MMSZ5255BS;Diodes;Zener 10V-50V; 28.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5255BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 25.6 .MODEL DF D ( IS=7.36p RS=30.1 N=1.10 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.47f RS=26.7 N=3.00 ) *SRC=MMSZ5256B;DI_MMSZ5256B;Diodes;Zener 10V-50V; 30.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5256B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.6 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=14.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=30.5 N=3.00 ) *SRC=MMSZ5256BS;DI_MMSZ5256BS;Diodes;Zener 10V-50V; 30.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5256BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.6 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=14.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=30.5 N=3.00 ) *SRC=MMSZ5257B;DI_MMSZ5257B;Diodes;Zener 10V-50V; 33.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5257B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.6 .MODEL DF D ( IS=6.24p RS=29.6 N=1.10 + CJO=14.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.25f RS=37.6 N=3.00 ) *SRC=MMSZ5257BS;DI_MMSZ5257BS;Diodes;Zener 10V-50V; 33.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5257BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.6 .MODEL DF D ( IS=6.24p RS=29.6 N=1.10 + CJO=14.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.25f RS=37.6 N=3.00 ) *SRC=MMSZ5258B;DI_MMSZ5258B;Diodes;Zener 10V-50V; 36.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5258B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.6 .MODEL DF D ( IS=5.72p RS=3.55k N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.14f RS=47.1 N=3.00 ) *SRC=MMSZ5258BS;DI_MMSZ5258BS;Diodes;Zener 10V-50V; 36.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5258BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.6 .MODEL DF D ( IS=5.72p RS=29.4 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.14f RS=47.1 N=3.00 ) *SRC=MMSZ5259B;DI_MMSZ5259B;Diodes;Zener 10V-50V; 39.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5259B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.6 .MODEL DF D ( IS=5.28p RS=29.1 N=1.10 + CJO=13.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.06f RS=55.7 N=3.00 ) *SRC=MMSZ5259BS;DI_MMSZ5259BS;Diodes;Zener 10V-50V; 39.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5259BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.6 .MODEL DF D ( IS=5.28p RS=29.1 N=1.10 + CJO=13.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.06f RS=55.7 N=3.00 ) *SRC=MMSZ5263B;MMSZ5263B;Diodes;Zener >50V; 56.0V 0.500W DIODES Zener *SYM=HZEN .SUBCKT MMSZ5263B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 53.5 .MODEL DF D ( IS=3.68p RS=28.1 N=1.10 + CJO=11.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.36e-016 RS=115 N=3.00 ) .ENDS *SRC=QZX363C12;DI_QZX363C12;Diodes;Zener 10V-50V; 12.0V 0.200W Diodes Inc. Zener Diode Array, quad, one node of four *SYM=HZEN .SUBCKT DI_QZX363C12 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.71 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=26.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=9.46 N=3.00 ) *SRC=QZX363C15;DI_QZX363C15;Diodes;Zener 10V-50V; 15.0V 0.200W Diodes Inc. Zener Diode Array, quad, one node of four *SYM=HZEN .SUBCKT DI_QZX363C15 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=5.49p RS=29.3 N=1.10 + CJO=25.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.10f RS=14.5 N=3.00 ) *SRC=QZX363C20;DI_QZX363C20;Diodes;Zener 10V-50V; 20.0V 0.200W Diodes Inc. Zener Diode Array, quad, one node of four *SYM=HZEN .SUBCKT DI_QZX363C20 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.5 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24e-016 RS=39.5 N=3.00 ) *SRC=QZX363C5V6;DI_QZX363C5V6;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. Zener Diode Array, quad, one node of four *SYM=HZEN .SUBCKT DI_QZX363C5V6 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.29 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10 + CJO=92.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.94f RS=24.5 N=3.00 ) *SRC=QZX363C6V8;DI_QZX363C6V8;Diodes;Zener <=10V; 6.80V 0.200W Diodes Inc. Zener Diode Array, quad, one node of four *SYM=HZEN .SUBCKT DI_QZX363C6V8 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.15 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10 + CJO=66.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.42f RS=3.45 N=2.23 ) *SRC=QZX563C6V8C;DI_QZX563C6V8C;Diodes;Zener <=10V; 6.80V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_QZX563C6V8C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.20 .MODEL DF D ( IS=30.3p RS=34.1 N=1.10 + CJO=72.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.06f RS=3.45 N=2.23 *DIODES_INC_SPICE_MODEL *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=18sep2013 *VERSION=1 .SUBCKT SMAZ15 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 14.2 .MODEL DF D ( IS=2.51p RS=.0780 N=1.15 + CJO=100p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.02f RS=3.8 N=1 ) .ENDS .SIMULATOR DEFAULT * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *SRC=UDZ5V1B;UDZ5V1B;Diodes;Zener <=10V; 5.10V 0.200W DIODES INC Zener *SYM=HZEN .SUBCKT UDZ5V1B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 4.20 .MODEL DF D ( IS=16.2p RS=25.3 N=1.10 + CJO=28.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.23f RS=1.89 N=1.22 ) .ENDS *SRC=UDZ5V1BF;UDZ5V1BF;Diodes;Zener <=10V; 5.09V 0.500W DIODES Zener *SYM=HZEN .SUBCKT UDZ5V1BF 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.66 .MODEL DF D ( IS=40.5p RS=1.92 N=1.10 + CJO=30.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.09f RS=64.5 N=3.00 ) .ENDS *TITLE=GDZ5V6LP3 *DATE=25/01/2016 *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *VERSION=1 ** Imported from: C:\Users\suppuluri\Desktop\GDZ3V9LP3.txt .model GDZ5V6LP3 D(IS=.21f RS=0.35 CJO=14.5p M=0.37 VJ=0.7 N=1 IKF=18m ISR=.05n + BV=5.5 IBV=100u TT=30n EG=1.09 TRS1=.1m) * (c) 2016 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *DIODES_INC_SPICE_MODEL PD3Z284C5V6 *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=02/12/15 *VERSION=1 *PINS 1=A 2=K .SUBCKT DDZ9684 1 2 * Terminals A K D1 1 2 DF DR 3 1 DR VZ 2 3 2.25 .MODEL DF D ( IS=1.5f RS=.22 N=1 + CJO=119p VJ=0.750 M=0.330 TT=50.1n BV=5.1 IBV=3u TBV1=.31m TRS1=3m NBV=1.8) .MODEL DR D ( IS=80f RS=200 N=2 EG=1.4) .ENDS * (c) 2015 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *DIODES_INC_SPICE_MODEL *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=29Jan2016 *VERSION=1 .SUBCKT DDZ3V6BSF 1 2 * Terminals A K D1 1 2 DF DZ 1 2 DR .MODEL DF D ( IS=10f RS=.5 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=10.1n BV=3.35 IBV=.1u TBV1=-1m) .MODEL DR D ( IS=5f RS=6k N=10 BV=.5 IBV=1f ISR=1f Eg=1.4 TBV1=-6m) .ENDS * (c) 2016 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *TITLE=GDZ6V8LP3 *DATE=22/02/2016 *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *VERSION=1 .model GDZ6V8LP3 D(IS=.2f RS=.05 CJO=17p M=0.37 VJ=0.7 N=.9 IKF=.1m ISR=.05n + BV=6.71 IBV=100u TT=30n EG=1.14 TRS1=.01m) * (c) 2016 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *DIODES_INC_SPICE_MODEL *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=26Feb2016 *VERSION=1 .SUBCKT DDZ6V8B 1 2 * Terminals A K D1 1 2 DF DZ 1 2 DR .MODEL DF D ( IS=30f RS=.22 N=1.13 + CJO=46.3p VJ=0.750 M=0.330 TT=10.1n BV=6.5 IBV=1u TBV1=.3m NBV=.8) .MODEL DR D ( IS=5f RS=4k N=10 BV=4.5 IBV=1f ISR=1f Eg=1.4 TBV1=-1.22m NBV=3) .ENDS * (c) 2016 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, Un *DIODES_INC_SPICE_MODEL *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=26Feb2016 *VERSION=1 .SUBCKT DDZ6V8BSF 1 2 * Terminals A K D1 1 2 DF DZ 1 2 DR .MODEL DF D ( IS=30f RS=.22 N=1.13 + CJO=46.3p VJ=0.750 M=0.330 TT=10.1n BV=6.5 IBV=1u TBV1=.3m NBV=.8) .MODEL DR D ( IS=5f RS=4k N=10 BV=4.5 IBV=1f ISR=1f Eg=1.4 TBV1=-1.22m NBV=3) .ENDS * (c) 2016 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, Un *DIODES_INC_SPICE_MODEL *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=13May2016 *VERSION=1 .SUBCKT DDZ9V1BSF 1 2 * Terminals A K D1 1 2 DF DZ 1 2 DR .MODEL DF D ( IS=55f RS=.075 N=1.15 + CJO=46.3p VJ=0.750 M=0.330 TT=10.1n BV=8.6 IBV=10u TBV1=.4m IKF=30m EG=1.16) .MODEL DR D ( IS=5f RS=6k N=10 BV=7 IBV=1p ISR=1f Eg=.05 TBV1=-1m) .ENDS * (c) 2016 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *DIODES_INC_SPICE_MODEL *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=13Jun2016 *VERSION=1 .SUBCKT DDZ4V3BSF 1 2 * Terminals A K D1 1 2 DF DZ 1 2 DR .MODEL DF D ( IS=10f RS=.5 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=10.1n BV=4 IBV=.6u TBV1=-1m) .MODEL DR D ( IS=5f RS=6k N=10 BV=.5 IBV=1f ISR=1f Eg=1.4 TBV1=-6m) .ENDS * (c) 2016 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *TITLE=GDZ3V9LP3 *DATE=21/11/2013 *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *VERSION=1 ** Imported from: C:UserssuppuluriDesktopGDZ3V9LP3.txt .model GDZ3V9LP3 D(IS=.21f RS=0.15 CJO=17p M=0.37 VJ=0.7 N=1 IKF=5m ISR=.05n + BV=5 IBV=100u TT=30n EG=1.12 TRS1=.1m) * .ENDS (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *SRC=BZT52C13S;DI_BZT52C13S;Diodes;Zener 10V-50V; 13.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C13S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=6.34p RS=29.7 N=1.10 + CJO=25.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.27f RS=14.5 N=3.00 ).ENDS *SRC=BZT52C22T;DI_BZT52C22T;Diodes;Zener 10V-50V; 22.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C22 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.6 .MODEL DF D ( IS=9.36p RS=30.8 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.87f RS=39.5 N=3.00).ENDS *SRC=BZT52C24;DI_BZT52C24;Diodes;Zener 10V-50V; 24.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C24 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.5 .MODEL DF D ( IS=8.58p RS=30.5 N=1.10 + CJO=21.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.72f RS=54.5 N=3.00).ENDS *SRC=BZT52C4V3S;DI_BZT52C4V3S;Diodes;Zener <=10V; 4.30V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C4V3S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.76 .MODEL DF D ( IS=19.2p RS=32.8 N=1.10 + CJO=370p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.83f RS=74.5 N=3.00 ).ENDS *SRC=BZT52C4V3T;DI_BZT52C4V3T;Diodes;Zener <=10V; 4.30V 0.15W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C4V3T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.83 .MODEL DF D ( IS=47.9p RS=35.4 N=1.10 + CJO=370p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.58f RS=74.5 N=3.00).ENDS *SRC=BZT52C4V7S;DI_BZT52C4V7S;Diodes;Zener <=10V; 4.70V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C4V7S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.20 .MODEL DF D ( IS=17.5p RS=32.6 N=1.10 + CJO=357p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.51f RS=64.5 N=3.00 ).ENDS *SRC=BZT52C4V7T;DI_BZT52C4V7T;Diodes;Zener <=10V; 4.70V 0.15W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C4V7T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.27 .MODEL DF D ( IS=43.8p RS=35.2 N=1.10 + CJO=357p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.77f RS=64.5 N=3.00).ENDS *SRC=BZT52C51S;DI_BZT52C51S;Diodes;Zener >50V; 51.0V 0.200W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_BZT52C51S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 48.2 .MODEL DF D ( IS=1.62p RS=25.8 N=1.10 + CJO=24.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.23e-016 RS=84.5 N=3.00 ).ENDS *SRC=BZT52C5V1;DI_BZT52C5V1;Diodes;Zener <=10V; 5.10V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C5V1 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.77 .MODEL DF D ( IS=40.4p RS=34.9 N=1.10 + CJO=145p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.08f RS=44.5 N=3.00).ENDS *SRC=BZT52C5V1S;DI_BZT52C5V1S;Diodes;Zener <=10V; 5.10V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C5V1S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.70 .MODEL DF D ( IS=16.2p RS=32.3 N=1.10 + CJO=145p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.23f RS=44.5 N=3.00 ).ENDS *SRC=BZT52C5V6S;DI_BZT52C5V6S;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C5V6S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.29 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10 + CJO=99.2p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.94f RS=24.5 N=3.00 ).ENDS *SRC=BZT52C5V6T;DI_BZT52C5V6T;Diodes;Zener <=10V; 5.60V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C5V6 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.36 .MODEL DF D ( IS=36.8p RS=34.7 N=1.10 + CJO=99.2p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.36f RS=24.5 N=3.00).ENDS *SRC=BZT52C6V2;DI_BZT52C6V2;Diodes;Zener <=10V; 6.20V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C6V2 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.14 .MODEL DF D ( IS=33.2p RS=34.4 N=1.10 + CJO=79.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.65f RS=2.30 N=1.49).ENDS * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=1/04/2014 *VERSION=1 .model BZT52C6V2LP D(IS=.0002n RS=0.01 CJO=1000p M=0.5 VJ=0.4 N=1.2 IKF=30m ISR=.0002u BV=6 IBV=10u TT=40n EG=1.2 TRS1=.01m) .ENDS * (c) 2016 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * .SIMULATOR DEFAULT *SRC=BZT52C6V2T;DI_BZT52C6V2T;Diodes;Zener <=10V; 6.20V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C6V2 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.14 .MODEL DF D ( IS=33.2p RS=34.4 N=1.10 + CJO=79.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.65f RS=2.30 N=1.49).ENDS *SRC=BZT52C6V8;DI_BZT52C6V8;Diodes;Zener <=10V; 6.80V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C6V8 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.20 .MODEL DF D ( IS=30.3p RS=34.1 N=1.10 + CJO=72.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.06f RS=3.45 N=2.23).ENDS *SRC=BZT52C6V8S;DI_BZT52C6V8S;Diodes;Zener <=10V; 6.80V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C6V8S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.15 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10 + CJO=72.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.42f RS=3.45 N=2.23 ).ENDS *SRC=BZT52C6V8T;DI_BZT52C6V8T;Diodes;Zener <=10V; 6.80V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C6V8 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.20 .MODEL DF D ( IS=30.3p RS=34.1 N=1.10 + CJO=72.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.06f RS=3.45 N=2.23).ENDS *SRC=BZT52C7V5;DI_BZT52C7V5;Diodes;Zener <=10V; 7.50V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C7V5 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.89 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49f RS=3.45 N=2.23).ENDS *SRC=BZT52C7V5S;DI_BZT52C7V5S;Diodes;Zener <=10V; 7.50V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C7V5S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.84 .MODEL DF D ( IS=11.0p RS=31.2 N=1.10 + CJO=54.2p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.20f RS=3.45 N=2.23 ).ENDS *SRC=BZT52C7V5T;DI_BZT52C7V5T;Diodes;Zener <=10V; 7.50V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C7V5 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.89 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49f RS=3.45 N=2.23).ENDS *SRC=BZT52C8V2S;DI_BZT52C8V2S;Diodes;Zener <=10V; 8.20V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C8V2S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.53 .MODEL DF D ( IS=10.0p RS=31.0 N=1.10 + CJO=51.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.01f RS=3.45 N=2.23 ).ENDS *SRC=BZT52C9V1S;DI_BZT52C9V1S;Diodes;Zener <=10V; 9.10V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C9V1S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.43 .MODEL DF D ( IS=9.05p RS=30.7 N=1.10 + CJO=48.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.81f RS=3.45 N=2.23 ).ENDS *SRC=BZX84C10S;DI_BZX84C10S;Diodes;Zener <=10V; 10.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C10S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.76 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10 + CJO=24.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.65f RS=4.60 N=2.97 ).ENDS *SRC=BZX84C10T;DI_BZX84C10T;Diodes;Zener <=10V; 10.0V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C10T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.74 .MODEL DF D ( IS=6.18p RS=29.6 N=1.10 + CJO=24.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.24f RS=4.60 N=2.97 ).ENDS *SRC=BZX84C10TS;DI_BZX84C10TS;Diodes;Zener <=10V; 10.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C10TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.76 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10 + CJO=24.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.65f RS=4.60 N=2.97 ).ENDS *SRC=BZX84C10W;DI_BZX84C10W;Diodes;Zener <=10V; 10.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C10W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.76 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10 + CJO=24.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.65f RS=4.60 N=2.97 ).ENDS *SRC=BZX84C11S;DI_BZX84C11S;Diodes;Zener 10V-50V; 11.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C11S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.76 .MODEL DF D ( IS=7.49p RS=30.1 N=1.10 + CJO=45.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.50f RS=4.60 N=2.97 ).ENDS *SRC=BZX84C11T;DI_BZX84C11T;Diodes;Zener 10V-50V; 11.0V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C11T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.74 .MODEL DF D ( IS=5.62p RS=29.3 N=1.10 + CJO=45.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.12f RS=4.60 N=2.97 ).ENDS *SRC=BZX84C11W;DI_BZX84C11W;Diodes;Zener 10V-50V; 11.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C11W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.76 .MODEL DF D ( IS=7.49p RS=30.1 N=1.10 + CJO=45.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.50f RS=4.60 N=2.97 ).ENDS *SRC=BZX84C12S;DI_BZX84C12S;Diodes;Zener 10V-50V; 12.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C12S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.71 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=42.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=9.46 N=3.00 ).ENDS *SRC=BZX84C12T;DI_BZX84C12T;Diodes;Zener 10V-50V; 12.0V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C12T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.68 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10 + CJO=42.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.03f RS=9.46 N=3.00 ).ENDS *SRC=BZX84C12TS;DI_BZX84C12TS;Diodes;Zener 10V-50V; 12.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C12TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.71 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=42.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=9.46 N=3.00 ).ENDS *SRC=BZX84C12W;DI_BZX84C12W;Diodes;Zener 10V-50V; 12.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C12W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.71 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=42.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=9.46 N=3.00 ).ENDS *SRC=BZX84C13T;DI_BZX84C13T;Diodes;Zener 10V-50V; 13.0V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C13T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=4.75p RS=28.8 N=1.10 + CJO=40.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.51e-016 RS=14.5 N=3.00 ).ENDS *SRC=BZX84C13TS;DI_BZX84C13TS;Diodes;Zener 10V-50V; 13.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C13TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=6.34p RS=29.7 N=1.10 + CJO=40.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.27f RS=14.5 N=3.00 ).ENDS *SRC=BZX84C13W;DI_BZX84C13W;Diodes;Zener 10V-50V; 13.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C13W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=6.34p RS=29.7 N=1.10 + CJO=40.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.27f RS=14.5 N=3.00 ).ENDS *SRC=BZX84C15S;DI_BZX84C15S;Diodes;Zener 10V-50V; 15.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C15S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=5.49p RS=29.3 N=1.10 + CJO=37.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.10f RS=14.5 N=3.00 ).ENDS *SRC=BZX84C15T;DI_BZX84C15T;Diodes;Zener 10V-50V; 15.0V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C15T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.6 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10 + CJO=37.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24e-016 RS=14.5 N=3.00 ).ENDS *SRC=BZX84C15TS;DI_BZX84C15TS;Diodes;Zener 10V-50V; 15.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C15TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=5.49p RS=29.3 N=1.10 + CJO=37.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.10f RS=14.5 N=3.00 ).ENDS *SRC=BZX84C15W;DI_BZX84C15W;Diodes;Zener 10V-50V; 15.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C15W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=5.49p RS=29.3 N=1.10 + CJO=37.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.10f RS=14.5 N=3.00 ).ENDS *SRC=BZX84C16S;DI_BZX84C16S;Diodes;Zener 10V-50V; 16.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C16S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.6 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10 + CJO=35.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.03f RS=24.5 N=3.00 ).ENDS *SRC=BZX84C16T;DI_BZX84C16T;Diodes;Zener 10V-50V; 16.0V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C16T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.6 .MODEL DF D ( IS=3.86p RS=28.2 N=1.10 + CJO=35.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.73e-016 RS=24.5 N=3.00 ).ENDS *SRC=BZX84C16TS;DI_BZX84C16TS;Diodes;Zener 10V-50V; 16.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C16TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.6 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10 + CJO=35.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.03f RS=24.5 N=3.00 ).ENDS *SRC=BZX84C16W;DI_BZX84C16W;Diodes;Zener 10V-50V; 16.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C16W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.6 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10 + CJO=35.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.03f RS=24.5 N=3.00 ).ENDS *SRC=BZX84C18S;DI_BZX84C18S;Diodes;Zener 10V-50V; 18.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C18S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10 + CJO=33.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.16e-016 RS=29.5 N=3.00 ).ENDS *SRC=BZX84C18T;DI_BZX84C18T;Diodes;Zener 10V-50V; 18.0V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C18T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10 + CJO=33.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87e-016 RS=29.5 N=3.00 ).ENDS *SRC=BZX84C18TS;DI_BZX84C18TS;Diodes;Zener 10V-50V; 18.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C18TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10 + CJO=33.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.16e-016 RS=29.5 N=3.00 ).ENDS *SRC=BZX84C18W;DI_BZX84C18W;Diodes;Zener 10V-50V; 18.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C18W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10 + CJO=33.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.16e-016 RS=29.5 N=3.00 ).ENDS *SRC=BZX84C20S;DI_BZX84C20S;Diodes;Zener 10V-50V; 20.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C20S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.5 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10 + CJO=31.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24e-016 RS=39.5 N=3.00 ).ENDS *SRC=BZX84C20T;DI_BZX84C20T;Diodes;Zener 10V-50V; 20.0V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C20T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.5 .MODEL DF D ( IS=3.09p RS=27.6 N=1.10 + CJO=31.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.18e-016 RS=39.5 N=3.00 ).ENDS *SRC=BZX84C20TS;DI_BZX84C20TS;Diodes;Zener 10V-50V; 20.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C20TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.5 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10 + CJO=31.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24e-016 RS=39.5 N=3.00 ).ENDS *SRC=BZX84C20W;DI_BZX84C20W;Diodes;Zener 10V-50V; 20.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C20W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.5 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10 + CJO=31.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24e-016 RS=39.5 N=3.00 ).ENDS *SRC=BZX84C22S;DI_BZX84C22S;Diodes;Zener 10V-50V; 22.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C22S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.5 .MODEL DF D ( IS=3.75p RS=28.2 N=1.10 + CJO=30.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.49e-016 RS=39.5 N=3.00 ).ENDS *SRC=BZX84C22T;DI_BZX84C22T;Diodes;Zener 10V-50V; 22.0V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C22T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.5 .MODEL DF D ( IS=2.81p RS=27.3 N=1.10 + CJO=30.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.62e-016 RS=39.5 N=3.00 ).ENDS *SRC=BZX84C22TS;DI_BZX84C22TS;Diodes;Zener 10V-50V; 22.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C22TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.5 .MODEL DF D ( IS=3.75p RS=28.2 N=1.10 + CJO=30.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.49e-016 RS=39.5 N=3.00 ).ENDS *SRC=BZX84C22W;DI_BZX84C22W;Diodes;Zener 10V-50V; 22.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C22W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.5 .MODEL DF D ( IS=3.75p RS=28.2 N=1.10 + CJO=30.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.49e-016 RS=39.5 N=3.00 ).ENDS *SRC=BZX84C24T;DI_BZX84C24T;Diodes;Zener 10V-50V; 24.0V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C24T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.4 .MODEL DF D ( IS=2.57p RS=27.1 N=1.10 + CJO=28.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.15e-016 RS=54.5 N=3.00 ).ENDS *SRC=BZX84C24TS;DI_BZX84C24TS;Diodes;Zener 10V-50V; 24.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C24TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.4 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10 + CJO=28.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87e-016 RS=54.5 N=3.00 ).ENDS *SRC=BZX84C24W;DI_BZX84C24W;Diodes;Zener 10V-50V; 24.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C24W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.4 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10 + CJO=28.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87e-016 RS=54.5 N=3.00 ).ENDS *SRC=BZX84C27S;DI_BZX84C27S;Diodes;Zener 10V-50V; 27.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C27S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.7 .MODEL DF D ( IS=3.05p RS=27.6 N=1.10 + CJO=27.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.10e-016 RS=41.1 N=3.00 ).ENDS *SRC=BZX84C27T;DI_BZX84C27T;Diodes;Zener 10V-50V; 27.0V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C27T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.7 .MODEL DF D ( IS=2.29p RS=26.8 N=1.10 + CJO=27.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58e-016 RS=41.1 N=3.00 ).ENDS *SRC=BZX84C27TS;DI_BZX84C27TS;Diodes;Zener 10V-50V; 27.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C27TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.7 .MODEL DF D ( IS=3.05p RS=27.6 N=1.10 + CJO=27.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.10e-016 RS=41.1 N=3.00 ).ENDS *SRC=BZX84C27W;DI_BZX84C27W;Diodes;Zener 10V-50V; 27.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C27W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.7 .MODEL DF D ( IS=3.05p RS=27.6 N=1.10 + CJO=27.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.10e-016 RS=41.1 N=3.00 ).ENDS *SRC=BZX84C2V4S;DI_BZX84C2V4S;Diodes;Zener <=10V; 2.40V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C2V4S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=34.3p RS=34.5 N=1.10 + CJO=205p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87f RS=84.5 N=3.00 ).ENDS *SRC=BZX84C2V4T;DI_BZX84C2V4T;Diodes;Zener <=10V; 2.40V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C2V4T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=25.7p RS=33.7 N=1.10 + CJO=205p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.15f RS=84.5 N=3.00 ).ENDS *SRC=BZX84C2V4TS;DI_BZX84C2V4TS;Diodes;Zener <=10V; 2.40V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C2V4TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=34.3p RS=34.5 N=1.10 + CJO=205p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87f RS=84.5 N=3.00 ).ENDS *SRC=BZX84C2V4W;DI_BZX84C2V4W;Diodes;Zener <=10V; 2.40V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C2V4W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=34.3p RS=34.5 N=1.10 + CJO=205p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87f RS=84.5 N=3.00 ).ENDS *SRC=BZX84C2V7S;DI_BZX84C2V7S;Diodes;Zener <=10V; 2.70V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C2V7S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.146 .MODEL DF D ( IS=30.5p RS=34.1 N=1.10 + CJO=172p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.10f RS=84.5 N=3.00 ).ENDS *SRC=BZX84C2V7T;DI_BZX84C2V7T;Diodes;Zener <=10V; 2.70V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C2V7T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.124 .MODEL DF D ( IS=22.9p RS=33.3 N=1.10 + CJO=172p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58f RS=84.5 N=3.00 ).ENDS *SRC=BZX84C2V7TS;DI_BZX84C2V7TS;Diodes;Zener <=10V; 2.70V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C2V7TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.146 .MODEL DF D ( IS=30.5p RS=34.1 N=1.10 + CJO=172p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.10f RS=84.5 N=3.00 ).ENDS *SRC=BZX84C2V7W;DI_BZX84C2V7W;Diodes;Zener <=10V; 2.70V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C2V7W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.146 .MODEL DF D ( IS=30.5p RS=34.1 N=1.10 + CJO=172p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.10f RS=84.5 N=3.00 ).ENDS *SRC=BZX84C30S;DI_BZX84C30S;Diodes;Zener 10V-50V; 30.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C30S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.7 .MODEL DF D ( IS=2.75p RS=27.3 N=1.10 + CJO=26.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49e-016 RS=41.1 N=3.00 ).ENDS *SRC=BZX84C30T;DI_BZX84C30T;Diodes;Zener 10V-50V; 30.0V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C30T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.6 .MODEL DF D ( IS=2.06p RS=26.5 N=1.10 + CJO=26.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.12e-016 RS=41.1 N=3.00 ).ENDS *SRC=BZX84C30TS;DI_BZX84C30TS;Diodes;Zener 10V-50V; 30.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C30TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.7 .MODEL DF D ( IS=2.75p RS=27.3 N=1.10 + CJO=26.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49e-016 RS=41.1 N=3.00 ).ENDS *SRC=BZX84C30W;DI_BZX84C30W;Diodes;Zener 10V-50V; 30.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C30W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.7 .MODEL DF D ( IS=2.75p RS=27.3 N=1.10 + CJO=26.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49e-016 RS=41.1 N=3.00 ).ENDS *SRC=BZX84C33S;DI_BZX84C33S;Diodes;Zener 10V-50V; 33.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C33S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.7 .MODEL DF D ( IS=2.50p RS=27.0 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.99e-016 RS=41.1 N=3.00 ).ENDS *SRC=BZX84C33T;DI_BZX84C33T;Diodes;Zener 10V-50V; 33.0V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C33T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.6 .MODEL DF D ( IS=1.87p RS=26.2 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.75e-016 RS=41.1 N=3.00 ).ENDS *SRC=BZX84C33TS;DI_BZX84C33TS;Diodes;Zener 10V-50V; 33.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C33TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.7 .MODEL DF D ( IS=2.50p RS=27.0 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.99e-016 RS=41.1 N=3.00 ).ENDS *SRC=BZX84C33W;DI_BZX84C33W;Diodes;Zener 10V-50V; 33.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C33W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.7 .MODEL DF D ( IS=2.50p RS=27.0 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.99e-016 RS=41.1 N=3.00 ).ENDS *SRC=BZX84C36S;DI_BZX84C36S;Diodes;Zener 10V-50V; 36.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C36S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.6 .MODEL DF D ( IS=2.29p RS=26.8 N=1.10 + CJO=24.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58e-016 RS=51.1 N=3.00 ).ENDS *SRC=BZX84C36T;DI_BZX84C36T;Diodes;Zener >50V; 536V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C36T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 533 .MODEL DF D ( IS=115f RS=18.2 N=1.10 + CJO=24.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.31e-017 RS=51.1 N=3.00 ).ENDS *SRC=BZX84C36TS;DI_BZX84C36TS;Diodes;Zener 10V-50V; 36.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C36TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.6 .MODEL DF D ( IS=2.29p RS=26.8 N=1.10 + CJO=24.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58e-016 RS=51.1 N=3.00 ).ENDS *SRC=BZX84C36W;DI_BZX84C36W;Diodes;Zener 10V-50V; 36.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C36W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.6 .MODEL DF D ( IS=2.29p RS=26.8 N=1.10 + CJO=24.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58e-016 RS=51.1 N=3.00 ).ENDS *SRC=BZX84C39S;DI_BZX84C39S;Diodes;Zener 10V-50V; 39.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C39S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.5 .MODEL DF D ( IS=2.11p RS=26.5 N=1.10 + CJO=23.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.23e-016 RS=91.1 N=3.00 ).ENDS *SRC=BZX84C39T;DI_BZX84C39T;Diodes;Zener 10V-50V; 39.0V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C39T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.5 .MODEL DF D ( IS=1.58p RS=25.7 N=1.10 + CJO=23.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.17e-016 RS=91.1 N=3.00 ).ENDS *SRC=BZX84C39TS;DI_BZX84C39TS;Diodes;Zener 10V-50V; 39.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C39TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.5 .MODEL DF D ( IS=2.11p RS=26.5 N=1.10 + CJO=23.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.23e-016 RS=91.1 N=3.00 ).ENDS *SRC=BZX84C39W;DI_BZX84C39W;Diodes;Zener 10V-50V; 39.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C39W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.5 .MODEL DF D ( IS=2.11p RS=26.5 N=1.10 + CJO=23.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.23e-016 RS=91.1 N=3.00 ).ENDS *SRC=BZX84C3V0S;DI_BZX84C3V0S;Diodes;Zener <=10V; 3.00V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C3V0S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.463 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10 + CJO=147p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49f RS=79.5 N=3.00 ).ENDS *SRC=BZX84C3V0T;DI_BZX84C3V0T;Diodes;Zener <=10V; 3.00V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C3V0T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.441 .MODEL DF D ( IS=20.6p RS=33.0 N=1.10 + CJO=147p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.12f RS=79.5 N=3.00 ).ENDS *SRC=BZX84C3V0TS;DI_BZX84C3V0TS;Diodes;Zener <=10V; 3.00V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C3V0TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.463 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10 + CJO=147p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49f RS=79.5 N=3.00 ).ENDS *SRC=BZX84C3V0W;DI_BZX84C3V0W;Diodes;Zener <=10V; 3.00V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C3V0W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.463 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10 + CJO=147p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49f RS=79.5 N=3.00 ).ENDS *SRC=BZX84C3V3S;DI_BZX84C3V3S;Diodes;Zener <=10V; 3.30V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C3V3S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.756 .MODEL DF D ( IS=25.0p RS=33.6 N=1.10 + CJO=127p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.99f RS=79.5 N=3.00 ).ENDS *SRC=BZX84C3V3T;DI_BZX84C3V3T;Diodes;Zener <=10V; 3.30V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C3V3T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.733 .MODEL DF D ( IS=18.7p RS=32.7 N=1.10 + CJO=127p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.75f RS=79.5 N=3.00 ).ENDS *SRC=BZX84C3V3TS;DI_BZX84C3V3TS;Diodes;Zener <=10V; 3.30V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C3V3TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.756 .MODEL DF D ( IS=25.0p RS=33.6 N=1.10 + CJO=127p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.99f RS=79.5 N=3.00 ).ENDS *SRC=BZX84C3V3W;DI_BZX84C3V3W;Diodes;Zener <=10V; 3.30V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C3V3W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.756 .MODEL DF D ( IS=25.0p RS=33.6 N=1.10 + CJO=127p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.99f RS=79.5 N=3.00 ).ENDS *SRC=BZX84C3V6S;DI_BZX84C3V6S;Diodes;Zener <=10V; 3.60V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C3V6S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.07 .MODEL DF D ( IS=22.9p RS=33.3 N=1.10 + CJO=112p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58f RS=74.5 N=3.00 ).ENDS *SRC=BZX84C3V6T;DI_BZX84C3V6T;Diodes;Zener <=10V; 3.60V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C3V6T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.05 .MODEL DF D ( IS=17.2p RS=32.5 N=1.10 + CJO=112p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.43f RS=74.5 N=3.00 ).ENDS *SRC=BZX84C3V6TS;DI_BZX84C3V6TS;Diodes;Zener <=10V; 3.60V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C3V6TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.07 .MODEL DF D ( IS=22.9p RS=33.3 N=1.10 + CJO=112p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58f RS=74.5 N=3.00 ).ENDS *SRC=BZX84C3V6W;DI_BZX84C3V6W;Diodes;Zener <=10V; 3.60V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C3V6W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.07 .MODEL DF D ( IS=22.9p RS=33.3 N=1.10 + CJO=112p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58f RS=74.5 N=3.00 ).ENDS *SRC=BZX84C3V9S;DI_BZX84C3V9S;Diodes;Zener <=10V; 3.90V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C3V9S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.37 .MODEL DF D ( IS=21.1p RS=33.1 N=1.10 + CJO=94.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.23f RS=74.5 N=3.00 ).ENDS *SRC=BZX84C3V9T;DI_BZX84C3V9T;Diodes;Zener <=10V; 3.90V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C3V9T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.35 .MODEL DF D ( IS=15.8p RS=32.3 N=1.10 + CJO=94.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.17f RS=74.5 N=3.00 ).ENDS *SRC=BZX84C3V9TS;DI_BZX84C3V9TS;Diodes;Zener <=10V; 3.90V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C3V9TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.37 .MODEL DF D ( IS=21.1p RS=33.1 N=1.10 + CJO=94.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.23f RS=74.5 N=3.00 ).ENDS *SRC=BZX84C3V9W;DI_BZX84C3V9W;Diodes;Zener <=10V; 3.90V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C3V9W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.37 .MODEL DF D ( IS=21.1p RS=33.1 N=1.10 + CJO=94.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.23f RS=74.5 N=3.00 ).ENDS *SRC=BZX84C4V3S;DI_BZX84C4V3S;Diodes;Zener <=10V; 4.30V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C4V3S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.76 .MODEL DF D ( IS=19.2p RS=32.8 N=1.10 + CJO=85.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.83f RS=74.5 N=3.00 ).ENDS *SRC=BZX84C4V3T;DI_BZX84C4V3T;Diodes;Zener <=10V; 4.30V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C4V3T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.74 .MODEL DF D ( IS=14.4p RS=32.0 N=1.10 + CJO=85.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.87f RS=74.5 N=3.00 ).ENDS *SRC=BZX84C4V3TS;DI_BZX84C4V3TS;Diodes;Zener <=10V; 4.30V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C4V3TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.76 .MODEL DF D ( IS=19.2p RS=32.8 N=1.10 + CJO=85.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.83f RS=74.5 N=3.00 ).ENDS *SRC=BZX84C4V3W;DI_BZX84C4V3W;Diodes;Zener <=10V; 4.30V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C4V3W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.76 .MODEL DF D ( IS=19.2p RS=32.8 N=1.10 + CJO=85.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.83f RS=74.5 N=3.00 ).ENDS *SRC=BZX84C4V7S;DI_BZX84C4V7S;Diodes;Zener <=10V; 4.70V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C4V7S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.20 .MODEL DF D ( IS=17.5p RS=32.6 N=1.10 + CJO=74.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.51f RS=64.5 N=3.00 ).ENDS *SRC=BZX84C4V7T;DI_BZX84C4V7T;Diodes;Zener <=10V; 4.70V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C4V7T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.18 .MODEL DF D ( IS=13.1p RS=31.7 N=1.10 + CJO=74.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.63f RS=64.5 N=3.00 ).ENDS *SRC=BZX84C4V7TS;DI_BZX84C4V7TS;Diodes;Zener <=10V; 4.70V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C4V7TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.20 .MODEL DF D ( IS=17.5p RS=32.6 N=1.10 + CJO=74.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.51f RS=64.5 N=3.00 ).ENDS *SRC=BZX84C4V7W;DI_BZX84C4V7W;Diodes;Zener <=10V; 4.70V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C4V7W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.20 .MODEL DF D ( IS=17.5p RS=32.6 N=1.10 + CJO=74.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.51f RS=64.5 N=3.00 ).ENDS *SRC=BZX84C5V1S;DI_BZX84C5V1S;Diodes;Zener <=10V; 5.10V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C5V1S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.70 .MODEL DF D ( IS=16.2p RS=32.3 N=1.10 + CJO=66.2p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.23f RS=44.5 N=3.00 ).ENDS *SRC=BZX84C5V1T;DI_BZX84C5V1T;Diodes;Zener <=10V; 5.10V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C5V1T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.67 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10 + CJO=66.2p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.42f RS=44.5 N=3.00 ).ENDS *SRC=BZX84C5V1TS;DI_BZX84C5V1TS;Diodes;Zener <=10V; 5.10V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C5V1TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.70 .MODEL DF D ( IS=16.2p RS=32.3 N=1.10 + CJO=66.2p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.23f RS=44.5 N=3.00 ).ENDS *SRC=BZX84C5V1W;DI_BZX84C5V1W;Diodes;Zener <=10V; 5.10V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C5V1W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.70 .MODEL DF D ( IS=16.2p RS=32.3 N=1.10 + CJO=66.2p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.23f RS=44.5 N=3.00 ).ENDS *SRC=BZX84C5V6S;DI_BZX84C5V6S;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C5V6S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.29 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10 + CJO=57.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.94f RS=24.5 N=3.00 ).ENDS *SRC=BZX84C5V6T;DI_BZX84C5V6T;Diodes;Zener <=10V; 5.60V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C5V6T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.27 .MODEL DF D ( IS=11.0p RS=31.2 N=1.10 + CJO=57.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.21f RS=24.5 N=3.00 ).ENDS *SRC=BZX84C5V6TS;DI_BZX84C5V6TS;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C5V6TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.29 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10 + CJO=57.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.94f RS=24.5 N=3.00 ).ENDS *SRC=BZX84C5V6W;DI_BZX84C5V6W;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C5V6W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.29 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10 + CJO=57.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.94f RS=24.5 N=3.00 ).ENDS *SRC=BZX84C6V2S;DI_BZX84C6V2S;Diodes;Zener <=10V; 6.20V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C6V2S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.10 .MODEL DF D ( IS=13.3p RS=31.8 N=1.10 + CJO=49.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.66f RS=2.30 N=1.49 ).ENDS *SRC=BZX84C6V2T;DI_BZX84C6V2T;Diodes;Zener <=10V; 6.20V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C6V2T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.09 .MODEL DF D ( IS=9.97p RS=31.0 N=1.10 + CJO=49.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.99f RS=2.30 N=1.49 ).ENDS *SRC=BZX84C6V2TS;DI_BZX84C6V2TS;Diodes;Zener <=10V; 6.20V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C6V2TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.10 .MODEL DF D ( IS=13.3p RS=31.8 N=1.10 + CJO=49.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.66f RS=2.30 N=1.49 ).ENDS *SRC=BZX84C6V2W;DI_BZX84C6V2W;Diodes;Zener <=10V; 6.20V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C6V2W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.10 .MODEL DF D ( IS=13.3p RS=31.8 N=1.10 + CJO=49.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.66f RS=2.30 N=1.49 ).ENDS *SRC=BZX84C6V8S;DI_BZX84C6V8S;Diodes;Zener <=10V; 6.80V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C6V8S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.15 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10 + CJO=43.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.42f RS=3.45 N=2.23 ).ENDS *SRC=BZX84C6V8T;DI_BZX84C6V8T;Diodes;Zener <=10V; 6.80V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C6V8T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.13 .MODEL DF D ( IS=9.09p RS=30.7 N=1.10 + CJO=43.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.82f RS=3.45 N=2.23 ) .ENDS *SRC=BZX84C6V8TS;DI_BZX84C6V8TS;Diodes;Zener <=10V; 6.80V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C6V8TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.15 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10 + CJO=43.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.42f RS=3.45 N=2.23 ).ENDS *SRC=BZX84C6V8W;DI_BZX84C6V8W;Diodes;Zener <=10V; 6.80V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C6V8W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.15 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10 + CJO=43.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.42f RS=3.45 N=2.23 ).ENDS *SRC=BZX84C7V5S;DI_BZX84C7V5S;Diodes;Zener <=10V; 7.50V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C7V5S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.84 .MODEL DF D ( IS=11.0p RS=31.2 N=1.10 + CJO=37.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.20f RS=3.45 N=2.23 ).ENDS *SRC=BZX84C7V5T;DI_BZX84C7V5T;Diodes;Zener <=10V; 7.50V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C7V5T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.82 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10 + CJO=37.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.65f RS=3.45 N=2.23 ).ENDS *SRC=BZX84C7V5TS;DI_BZX84C7V5TS;Diodes;Zener <=10V; 7.50V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C7V5TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.84 .MODEL DF D ( IS=11.0p RS=31.2 N=1.10 + CJO=37.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.20f RS=3.45 N=2.23 ).ENDS *SRC=BZX84C7V5W;DI_BZX84C7V5W;Diodes;Zener <=10V; 7.50V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C7V5W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.84 .MODEL DF D ( IS=11.0p RS=31.2 N=1.10 + CJO=37.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.20f RS=3.45 N=2.23 ).ENDS *SRC=BZX84C8V2S;DI_BZX84C8V2S;Diodes;Zener <=10V; 8.20V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C8V2S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.53 .MODEL DF D ( IS=10.0p RS=31.0 N=1.10 + CJO=32.5p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.01f RS=3.45 N=2.23 ).ENDS *SRC=BZX84C8V2T;DI_BZX84C8V2T;Diodes;Zener <=10V; 8.20V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C8V2T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.52 .MODEL DF D ( IS=7.54p RS=30.2 N=1.10 + CJO=32.5p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.51f RS=3.45 N=2.23 ).ENDS *SRC=BZX84C8V2TS;DI_BZX84C8V2TS;Diodes;Zener <=10V; 8.20V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C8V2TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.53 .MODEL DF D ( IS=10.0p RS=31.0 N=1.10 + CJO=32.5p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.01f RS=3.45 N=2.23 ).ENDS *SRC=BZX84C8V2W;DI_BZX84C8V2W;Diodes;Zener <=10V; 8.20V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C8V2W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.53 .MODEL DF D ( IS=10.0p RS=31.0 N=1.10 + CJO=32.5p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.01f RS=3.45 N=2.23 ).ENDS *SRC=BZX84C9V1S;DI_BZX84C9V1S;Diodes;Zener <=10V; 9.10V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C9V1S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.43 .MODEL DF D ( IS=9.05p RS=30.7 N=1.10 + CJO=27.8p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.81f RS=3.45 N=2.23 ).ENDS *SRC=BZX84C9V1T;DI_BZX84C9V1T;Diodes;Zener <=10V; 9.10V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C9V1T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.41 .MODEL DF D ( IS=6.79p RS=29.9 N=1.10 + CJO=27.8p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.36f RS=3.45 N=2.23 ).ENDS *SRC=BZX84C9V1TS;DI_BZX84C9V1TS;Diodes;Zener <=10V; 9.10V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C9V1TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.43 .MODEL DF D ( IS=9.05p RS=30.7 N=1.10 + CJO=27.8p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.81f RS=3.45 N=2.23 ).ENDS *SRC=BZX84C9V1W;DI_BZX84C9V1W;Diodes;Zener <=10V; 9.10V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C9V1W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.43 .MODEL DF D ( IS=9.05p RS=30.7 N=1.10 + CJO=27.8p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.81f RS=3.45 N=2.23 ).ENDS *SRC=DFLZ10;DI_DFLZ10;Diodes;Zener <=10V; 10.0V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ10 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.86 .MODEL DF D ( IS=41.2p RS=0.773 N=1.10 + CJO=622p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24f RS=0.230 N=1.49 ).ENDS *SRC=DFLZ11;DI_DFLZ11;Diodes;Zener 10V-50V; 11.0V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ11 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.58 .MODEL DF D ( IS=37.5p RS=0.759 N=1.10 + CJO=478p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.49f RS=2.45 N=3.00 ).ENDS *SRC=DFLZ12;DI_DFLZ12;Diodes;Zener 10V-50V; 12.0V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ12 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.58 .MODEL DF D ( IS=34.3p RS=0.747 N=1.10 + CJO=427p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87f RS=2.45 N=3.00 ).ENDS *SRC=DFLZ13;DI_DFLZ13;Diodes;Zener 10V-50V; 13.0V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ13 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.5 .MODEL DF D ( IS=31.7p RS=0.736 N=1.10 + CJO=415p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.34f RS=3.45 N=3.00 ).ENDS *SRC=DFLZ15;DI_DFLZ15;Diodes;Zener 10V-50V; 15.0V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ15 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.5 .MODEL DF D ( IS=27.5p RS=0.715 N=1.10 + CJO=402p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49f RS=3.45 N=3.00 ).ENDS *SRC=DFLZ16;DI_DFLZ16;Diodes;Zener 10V-50V; 16.0V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ16 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.7 .MODEL DF D ( IS=25.7p RS=0.706 N=1.10 + CJO=371p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.15f RS=2.89 N=3.00 ) .ENDS *SRC=DFLZ18;DI_DFLZ18;Diodes;Zener 10V-50V; 18.0V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ18 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=22.9p RS=0.689 N=1.10 + CJO=332p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58f RS=2.89 N=3.00 ).ENDS *SRC=DFLZ20;DI_DFLZ20;Diodes;Zener 10V-50V; 20.0V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ20 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.6 .MODEL DF D ( IS=20.6p RS=0.674 N=1.10 + CJO=313p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.12f RS=2.89 N=3.00 ).ENDS *SRC=DFLZ22;DI_DFLZ22;Diodes;Zener 10V-50V; 22.0V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ22 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.6 .MODEL DF D ( IS=18.7p RS=0.661 N=1.10 + CJO=277p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.75f RS=2.89 N=3.00 ).ENDS *SRC=DFLZ24;DI_DFLZ24;Diodes;Zener 10V-50V; 24.0V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ24 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.6 .MODEL DF D ( IS=17.2p RS=0.648 N=1.10 + CJO=259p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.43f RS=2.89 N=3.00 ).ENDS *SRC=DFLZ27;DI_DFLZ27;Diodes;Zener 10V-50V; 27.0V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ27 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.6 .MODEL DF D ( IS=15.3p RS=0.631 N=1.10 + CJO=253p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.05f RS=2.89 N=3.00 ).ENDS *SRC=DFLZ33;DI_DFLZ33;Diodes;Zener 10V-50V; 33.0V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ33 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.6 .MODEL DF D ( IS=12.5p RS=0.603 N=1.10 + CJO=220p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.50f RS=2.89 N=3.00 ) .ENDS *SRC=DFLZ36;DI_DFLZ36;Diodes;Zener 10V-50V; 36.0V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ36 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 34.9 .MODEL DF D ( IS=11.4p RS=0.590 N=1.10 + CJO=220p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.29f RS=1.15 N=1.49 ) .ENDS *SRC=DFLZ39;DI_DFLZ39;Diodes;Zener 10V-50V; 39.0V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ39 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 37.9 .MODEL DF D ( IS=10.6p RS=0.579 N=1.10 + CJO=220p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.11f RS=1.15 N=1.49 ) .ENDS *SRC=DFLZ5V1;DI_DFLZ5V1;Diodes;Zener <=10V; 5.10V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ5V1 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.69 .MODEL DF D ( IS=80.8p RS=0.869 N=1.10 + CJO=1.80n VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=16.2f RS=1.22 N=3.00 ).ENDS *SRC=DFLZ5V6;DI_DFLZ5V6;Diodes;Zener <=10V; 5.60V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ5V6 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.30 .MODEL DF D ( IS=73.6p RS=0.856 N=1.10 + CJO=1.52n VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=14.7f RS=0.230 N=2.97 ).ENDS *SRC=DFLZ6V2;DI_DFLZ6V2;Diodes;Zener <=10V; 6.20V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ6V2 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.89 .MODEL DF D ( IS=66.5p RS=0.841 N=1.10 + CJO=1.26n VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=13.3f RS=0.230 N=2.97 ).ENDS *SRC=DFLZ6V8;DI_DFLZ6V8;Diodes;Zener <=10V; 6.80V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ6V8 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 4.49 .MODEL DF D ( IS=60.6p RS=0.828 N=1.10 + CJO=1.02n VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=12.1f RS=0.230 N=2.97 ).ENDS *SRC=DFLZ7V5;DI_DFLZ7V5;Diodes;Zener <=10V; 7.50V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ7V5 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.18 .MODEL DF D ( IS=54.9p RS=0.814 N=1.10 + CJO=926p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=11.0f RS=0.230 N=2.97 ).ENDS *DIODES_INC_SPICE_MODEL *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=8Aug2016 *VERSION=1 .SUBCKT DDZ4V7ASF 1 2 * Terminals A K D1 1 2 DF DZ 1 2 DR .MODEL DF D ( IS=15f RS=.15 N=1.07 + CJO=46.3p VJ=0.750 M=0.330 TT=10.1n BV=4.31 IBV=6u TBV1=.1m ISR=50f) .MODEL DR D ( IS=10f RS=3k N=10 BV=2.5 IBV=10p ISR=150p Eg=1.4 TBV1=-.1m) .ENDS * (c) 2016 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *DIODES_INC_SPICE_MODEL *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=07Sep2016 *VERSION=1 .SUBCKT DDZ17 1 2 * Terminals A K D1 1 2 DF DZ 1 2 DR .MODEL DF D ( IS=55f RS=.075 N=1.15 + CJO=46.3p VJ=0.750 M=0.330 TT=10.1n BV=16.85 IBV=10u TBV1=.4m IKF=30m EG=1.16) .MODEL DR D ( IS=5f RS=6k N=10 BV=16 IBV=1p ISR=1f Eg=.08 TBV1=-1m) .ENDS * (c) 2016 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *SRC=1N4148WS;1N4148WS;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode .MODEL 1N4148WS D ( IS=10.4n RS=51.5m BV=75.0 IBV=1.00u + CJO=2.00p M=0.333 N=2.07 TT=5.76n ) *SRC=1N4148WT;DI_1N4148WT;Diodes;Si; 80.0V 0.125A 4.00ns Diodes Inc. Switching .MODEL DI_1N4148WT D ( IS=10.4n RS=51.5m BV=80.0 IBV=1.00u + CJO=2.00p M=0.333 N=2.07 TT=5.76n ) *SRC=1N4448HLP;DI_1N4448HLP;Diodes;Si; 80.0V 0.250A 4.00ns Diodes Inc. Switching Diode .MODEL DI_1N4448HLP D ( IS=3.2n RS=0.761 BV=100.0 IBV=100n ISR=5n + CJO=1.3p M=0.21 VJ=.5 N=1.88 TT=3n ) *SRC=1N4448HWS;DI_1N4448HWS;Diodes;Si; 80.0V 0.500A 4.00ns Diodes Inc. Switching Diode .MODEL DI_1N4448HWS D ( IS=24.7n RS=84.4m BV=80.0 IBV=100n + CJO=3.50p M=0.333 N=2.12 TT=5.76n ) *SRC=1N4448HWT;DI_1N4448HWT;Diodes;Si; 80.0V 0.250A 4.00ns Diodes Inc. Switching .MODEL DI_1N4448HWT D ( IS=137f RS=0.168 BV=80.0 IBV=100n + CJO=3.56p M=0.333 N=1.11 TT=5.76n ) *SRC=1N4448W;DI_1N4448W;Diodes;Si; 75.0V 0.250A 4.00ns Diodes Inc. .MODEL DI_1N4448W D ( IS=355p RS=0.168 BV=75.0 IBV=2.50u + CJO=4.00p M=0.333 N=1.70 TT=5.76n ) *SRC=1N4448WS;DI_1N4448WS;Diodes;Si; 75.0V 0.500A 4.00ns Diodes Inc. Switching Diode .MODEL DI_1N4448WS D ( IS=24.7n RS=84.4m BV=75.0 IBV=2.50u + CJO=4.00p M=0.333 N=2.12 TT=5.76n ) *SRC=BAL99;DI_BAL99;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode .MODEL DI_BAL99 D ( IS=31.2n RS=0.360 BV=75.0 IBV=2.50u + CJO=1.72p M=0.333 N=2.35 TT=5.76n ) *SRC=MMBD4148;DI_MMBD4148;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching .MODEL DI_MMBD4148 D ( IS=126n RS=0.140 BV=75.0 IBV=1.00u + CJO=2.65p M=0.333 N=2.60 TT=5.76n ) *SRC=BAS16LP;DI_BAS16LP;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode .MODEL DI_BAS16LP D ( IS=74.3n RS=0.699 BV=75.0 IBV=1.00u + CJO=2.00p M=0.333 N=2.35 TT=5.76n ) *SRC=BAS16T;DI_BAS16T;Diodes;Si; 85.0V 0.155A 4.00ns Diodes Inc. Switching Diode .MODEL DI_BAS16T D ( IS=2.69n RS=0.271 BV=85.0 IBV=2.00u + CJO=1.99p M=0.333 N=1.95 TT=5.76n ************************************************************************************************************************ *SRC=BAS16TW;DI_BAS16TW;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode .MODEL DI_BAS16TW D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u + CJO=1.72p M=0.333 N=2.34 TT=5.76n ) *SRC=BAS16V;DI_BAS16V;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching diode - one element of device .MODEL DI_BAS16V D ( IS=412p RS=0.140 BV=75.0 IBV=1.00u + CJO=1.72p M=0.333 N=1.70 TT=5.76n ) *SRC=BAS16W;DI_BAS16W;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode .MODEL DI_BAS16W D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u + CJO=1.72p M=0.333 N=2.34 TT=5.76n ) *SRC=BAS19;DI_BAS19;Diodes;Si; 100V 0.400A 50.0ns Diodes Inc. Switching Diode .MODEL DI_BAS19 D ( IS=41.7n RS=0.270 BV=100 IBV=100n + CJO=2.98p M=0.333 N=2.35 TT=72.0n ) *SRC=BAS19W;DI_BAS19W;Diodes;Si; 100V 0.400A 50.0ns Diodes Inc. Switching Diode .MODEL DI_BAS19W D ( IS=114n RS=0.172 BV=100 IBV=100n + CJO=2.98p M=0.333 N=2.58 TT=72.0n ) *SRC=BAS20;DI_BAS20;Diodes;Si; 150V 0.400A 50.0ns Diodes Inc. Switching Diode .MODEL DI_BAS20 D ( IS=41.7n RS=0.270 BV=150 IBV=100n + CJO=2.98p M=0.333 N=2.35 TT=72.0n ) *SRC=BAS20DW;DI_BAS20DW;Diodes;Si; 200V 0.300A 50.0ns Diodes Inc. Single Element of Dual BAS20DW .MODEL DI_BAS20DW D ( IS=2.86n RS=0.141 BV=200 IBV=100n + CJO=2.98p M=0.333 N=1.95 TT=72.0n ) *SRC=BAS20W;DI_BAS20W;Diodes;Si; 150V 0.400A 50.0ns Diodes Inc. Switching Diode .MODEL DI_BAS20W D ( IS=114n RS=0.172 BV=150 IBV=100n + CJO=2.98p M=0.333 N=2.58 TT=72.0n ) *SRC=BAS21;DI_BAS21;Diodes;Si; 200V 0.400A 50.0ns Diodes Inc. Switching Diode .MODEL DI_BAS21 D ( IS=41.7n RS=0.270 BV=200 IBV=100n + CJO=2.98p M=0.333 N=2.35 TT=72.0n ) *SRC=BAS21DW;DI_BAS21DW;Diodes;Si; 250V 0.300A 50.0ns Diodes Inc. Single Element of Dual BAS21DW .MODEL DI_BAS21DW D ( IS=2.86n RS=0.141 BV=250 IBV=100n + CJO=2.98p M=0.333 N=1.95 TT=72.0n ) *SRC=BAS21T;DI_BAS21T;Diodes;Si; 200V 0.400A 50.0ns Diodes Inc. Switching Diode .MODEL DI_BAS21T D ( IS=401n RS=0.105 BV=200 IBV=100n + CJO=5.00p M=0.333 N=2.87 TT=72.0n ) *SRC=BAS21W;DI_BAS21W;Diodes;Si; 200V 0.400A 50.0ns Diodes Inc. Switching Diode .MODEL DI_BAS21W D ( IS=114n RS=0.172 BV=200 IBV=100n + CJO=2.98p M=0.333 N=2.58 TT=72.0n ) *SRC=BAV116W;DI_BAV116W;Diodes;Si; 130V 0.215A 3.00us Diodes Inc. Low leakage diode .MODEL DI_BAV116W D ( IS=22.5p RS=0.282 BV=130 IBV=5.00n + CJO=2.40p M=0.333 N=1.67 TT=4.32u ) *SRC=BAV16W;BAV16W;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. - .MODEL BAV16W D ( IS=10.4n RS=51.5m BV=75.0 IBV=1.00u + CJO=2.00p M=0.333 N=2.07 TT=5.76n ) *SRC=BAV16WS;BAV16WS;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode .MODEL BAV16WS D ( IS=10.4n RS=51.5m BV=75.0 IBV=1.00u + CJO=2.00p M=0.333 N=2.07 TT=5.76n ) *SRC=BAV170;DI_BAV170;Diodes;Si; 85.0V 0.215A 3.00us Diodes, Inc. diode .MODEL DI_BAV170 D ( IS=31.5p RS=0.195 BV=85.0 IBV=5.00n + CJO=2.00p M=0.333 N=1.70 TT=4.32u *SRC=BAV170T;DI_BAV170T;Diodes;Si; 85.0V 0.125A 3.00us Diodes Inc. Switching Diode, dual, model for one element .MODEL DI_BAV170T D ( IS=10.5p RS=0.196 BV=85.0 IBV=5.00n + CJO=2.00p M=0.333 N=1.61 TT=4.32u ) *SRC=BAV199;DI_BAV199;Diodes;Si; 85.0V 0.160A 3.00us Diodes, Inc. diode .MODEL DI_BAV199 D ( IS=59.0p RS=0.262 BV=85.0 IBV=5.00n + CJO=2.00p M=0.333 N=1.78 TT=4.32u ) *SRC=BAV199DW;DI_BAV199DW;Diodes;Si; 85.0V 0.160A 3.00us Diodes, Inc. Switching - one element of BAV199DW array .MODEL DI_BAV199DW D ( IS=59.0p RS=0.262 BV=85.0 IBV=5.00n + CJO=2.00p M=0.333 N=1.78 TT=4.32u ) *SRC=BAV199T;DI_BAV199T;Diodes;Si; 85.0V 0.125A 3.00us Diodes Inc. Switching Diode, dual, model for one element .MODEL DI_BAV199T D ( IS=10.5p RS=0.196 BV=85.0 IBV=5.00n + CJO=2.00p M=0.333 N=1.61 TT=4.32u ) *SRC=BAV199W;DI_BAV199W;Diodes;Si; 85.0V 0.160A 3.00us Diodes Inc. Switching Diode .MODEL DI_BAV199W D ( IS=22.5p RS=0.264 BV=85.0 IBV=10.0u + CJO=2.00 M=0.333 N=1.70 TT=4.32u ) *SRC=BAV19W;BAV19W;Diodes;Si; 100V 0.400A 50.0ns Diodes Inc. - .MODEL BAV19W D ( IS=1.09u RS=0.105 BV=100 IBV=100n + CJO=5.00p M=0.333 N=3.29 TT=72.0n ) *SRC=BAV19WS;BAV19WS;Diodes;Si; 100V 0.400A 50.0ns Diodes Inc. Switching Diode .MODEL BAV19WS D ( IS=1.09u RS=0.105 BV=100 IBV=100n + CJO=5.00p M=0.333 N=3.29 TT=72.0n ) *SRC=BAV20W;DI_BAV20W;Diodes;Si; 150V 0.400A 50.0ns Diodes Inc. - .MODEL DI_BAV20W D ( IS=1.09u RS=0.105 BV=150 IBV=100n + CJO=5.00p M=0.333 N=3.29 TT=72.0n ) *SRC=BAV20WS;DI_BAV20WS;Diodes;Si; 150V 0.400A 50.0ns Diodes Inc. Switching Diode .MODEL DI_BAV20WS D ( IS=1.09u RS=0.105 BV=150 IBV=100n + CJO=5.00p M=0.333 N=3.29 TT=72.0n ) *DIODES_INC_SPICE_MODEL *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=20Oct2017 *VERSION=1 .MODEL DI_BAV21WS D(IS=15p RS=0.5 IKF=1.3m VCJO=3.3p M=0.3 VJ=0.7 + BV=200 IBV=.03u TT=40n EG=1.1 TRS1=1u N=1.2 XTI=5) * (c) 2017 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Di *SRC=BAV21WS;DI_BAV21WS;Diodes;Si; 200V 0.400A 50.0ns Diodes Inc. Switching Diode .MODEL DI_BAV21WS D ( IS=1.09u RS=0.105 BV=200 IBV=100n + CJO=5.00p M=0.333 N=3.29 TT=72.0n ) *SRC=BAV23A;DI_BAV23A;Diodes;Si; 200V 0.400A 50.0ns Diodes Inc. Switching Diode .MODEL DI_BAV23A D ( IS=237n RS=0.260 BV=200 IBV=100n + CJO=3.05p M=0.333 N=2.69 TT=72.0n ) *SRC=BAV23C;DI_BAV23C;Diodes;Si; 200V 0.400A 50.0ns Diodes Inc. Switching Diode .MODEL DI_BAV23C D ( IS=237n RS=0.260 BV=200 IBV=100n + CJO=3.05p M=0.333 N=2.69 TT=72.0n ) *SRC=BAV23S;DI_BAV23S;Diodes;Si; 200V 0.400A 50.0ns Diodes Inc. Switching Diode .MODEL DI_BAV23S D ( IS=237n RS=0.260 BV=200 IBV=100n + CJO=3.05p M=0.333 N=2.69 TT=72.0n ) *SRC=BAV3004W;DI_BAV3004W;Diodes;Si; 350V 0.225A 50.0ns Diodes, Inc. switching .MODEL DI_BAV3004W D ( IS=58.9n RS=0.412 BV=350 IBV=100n + CJO=1.17p M=0.333 N=2.37 TT=72.0n ) *SRC=BAV3004WS;DI_BAV3004WS;Diodes;Si; 350V 0.225A 50.0ns Diodes, Inc. switching .MODEL DI_BAV3004W D ( IS=58.9n RS=0.412 BV=350 IBV=100n + CJO=1.17p M=0.333 N=2.37 TT=72.0n ) *SRC=BAV70;DI_BAV70;Diodes;Si; 75.0V 0.300A 4.00ns Diodes, Inc. switching .MODEL DI_BAV70 D ( IS=308p RS=0.329 BV=75.0 IBV=2.50u + CJO=2.65p M=0.333 N=1.70 TT=5.76n ) *SRC=BAV70;DI_BAV70;Diodes;Si; 75.0V 0.300A 4.00ns Diodes, Inc. switching .MODEL DI_BAV70 D ( IS=308p RS=0.329 BV=75.0 IBV=2.50u + CJO=2.65p M=0.333 N=1.70 TT=5.76n ) *SRC=BAV70T;DI_BAV70T;Diodes;Si; 85.0V 0.155A 4.00ns Diodes Inc. Switching Diode - one element of device .MODEL DI_BAV70T D ( IS=2.69n RS=0.271 BV=85.0 IBV=2.00u + CJO=1.99p M=0.333 N=1.95 TT=5.76n ) *SRC=BAV70W;DI_BAV70W;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode .MODEL DI_BAV70W D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u + CJO=1.72p M=0.333 N=2.34 TT=5.76n ) *SRC=BAV756DW;DI_BAV756DW;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching - one element of device .MODEL DI_BAV756DW D ( IS=49.2n RS=0.141 BV=75.0 IBV=2.50u + CJO=2.65p M=0.333 N=2.45 TT=5.76n ) *SRC=BAV99;DI_BAV99;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. switching .MODEL DI_BAV99 D ( IS=261p RS=0.140 BV=75.0 IBV=2.50u + CJO=1.19p M=0.333 N=1.70 TT=5.76n ) *SRC=BAV99BRW;DI_BAV99BRW;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode, Quad, Model for one element .MODEL DI_BAV99BRW D ( IS=412p RS=0.140 BV=75.0 IBV=2.50u + CJO=2.00p M=0.333 N=1.70 TT=5.76n ) *SRC=BAV99T;DI_BAV99T;Diodes;Si; 85.0V 0.155A 4.00ns Diodes Inc. Switching Diode - one element of device .MODEL DI_BAV99T D ( IS=2.69n RS=0.271 BV=85.0 IBV=2.00u + CJO=1.99p M=0.333 N=1.95 TT=5.76n ) *SRC=BAV99W;DI_BAV99W;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode .MODEL DI_BAV99W D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u + CJO=1.72p M=0.333 N=2.34 TT=5.76n ) *SRC=BAW156;DI_BAW156;Diodes;Si; 85.0V 0.160A 3.00us Diodes, Inc. diode .MODEL DI_BAW156 D ( IS=59.0p RS=0.262 BV=85.0 IBV=5.00n + CJO=2.00p M=0.333 N=1.78 TT=4.32u ) *SRC=BAW156T;DI_BAW156T;Diodes;Si; 85.0V 0.125A 3.00us Diodes Inc. Switching Diode, dual, model for one element .MODEL DI_BAW156T D ( IS=10.5p RS=0.196 BV=85.0 IBV=5.00n + CJO=2.00p M=0.333 N=1.61 TT=4.32u ) *SRC=BAW56;DI_BAW56;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode .MODEL DI_BAW56 D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u + CJO=1.72p M=0.333 N=2.34 TT=5.76n ) *SRC=BAW567DW;DI_BAW567DW;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode .MODEL DI_BAW567DW D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u + CJO=1.72p M=0.333 N=2.34 TT=5.76n ) *SRC=BAW56DW;DI_BAW56DW;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode .MODEL DI_BAW56DW D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u + CJO=1.72p M=0.333 N=2.34 TT=5.76n ) *SRC=BAW56T;DI_BAW56T;Diodes;Si; 85.0V 0.155A 4.00ns Diodes Inc. Switching Diode - one element of device .MODEL DI_BAW56T D ( IS=2.69n RS=0.271 BV=85.0 IBV=2.00u + CJO=1.99p M=0.333 N=1.95 TT=5.76n ) *SRC=BAW56W;DI_BAW56W;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode .MODEL DI_BAW56W D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u + CJO=1.72p M=0.333 N=2.34 TT=5.76n ) *SRC=MMBD2004S;DI_MMBD2004S;Diodes;Si; 240V 0.225A 50.0ns Diodes Inc. Switching .MODEL DI_MMBD2004S D ( IS=1.76u RS=0.187 BV=240 IBV=100n + CJO=6.63p M=0.333 N=1.70 TT=72.0n ) *SRC=MMBD2004SW;DI_MMBD2004SW;Diodes;Si; 240V 0.225A 50.0ns Diodes Inc. Switching - one element of device .MODEL DI_MMBD2004SW D ( IS=1.76u RS=0.187 BV=240 IBV=100n + CJO=6.63p M=0.333 N=1.70 TT=72.0n ) *SRC=MMBD3004S;DI_MMBD3004S;Diodes;Si; 300V 0.225A 50.0ns Diodes Inc. Switching D1 1 = A 2 = C DI_MMBD3004A .MODEL DI_MMBD3004A D + IS = 5.000n + N = 1.930 + BV = 300.0 + IBV = 100.0n + RS = 730.0m + CJO = 979.0f + M = 43.5m + TT = 72.0n + VJ = 390.5m *SRC=MMBD3004BRM;DI_MMBD3004BRM;Diodes;Si; 300V 0.225A 50.0ns Diodes Inc. Switching - one element of MMBD3004BRM D1 1 = A 2 = C DI_MMBD3004BRM .MODEL DI_MMBD3004BRM D + IS = 5.000n + N = 1.930 + BV = 300.0 + IBV = 100.0n + RS = 730.0m + CJO = 979.0f + M = 43.5m + TT = 72.0n + VJ = 390.5m *SRC=MMBD3004S;DI_MMBD3004S;Diodes;Si; 300V 0.225A 50.0ns Diodes Inc. Switching D1 1 = A 2 = C DI_MMBD3004C .MODEL DI_MMBD3004C D + IS = 5.000n + N = 1.930 + BV = 300.0 + IBV = 100.0n + RS = 730.0m + CJO = 979.0f + M = 43.5m + TT = 72.0n + VJ = 390.5m *SRC=MMBD3004S;DI_MMBD3004S;Diodes;Si; 300V 0.225A 50.0ns Diodes Inc. Switching D1 1 = A 2 = C DI_MMBD3004S .MODEL DI_MMBD3004S D + IS = 5.000n + N = 1.930 + BV = 300.0 + IBV = 100.0n + RS = 730.0m + CJO = 979.0f + M = 43.5m + TT = 72.0n + VJ = 390.5m *SRC=MMBD4148;DI_MMBD4148;Diodes;Si; 75.0V 0.250A 4.00ns Diodes Inc. Switching Diode .MODEL DI_MMBD4148 D ( IS=300n RS=0.422 BV=75.0 IBV=2.50u + CJO=1.99p M=0.333 N=2.77 TT=5.76n ) *SRC=MMBD4148PLM;MMBD4148PLM;Diodes;Si; 75.0V 0.300A 4.00ns DIODES Inc .MODEL MMBD4148PLM D ( IS=13.0u RS=0.140 BV=75.0 IBV=1.00u + CJO=2.00 M=0.333 N=4.97 TT=5.76n ) *SRC=MMBD4148W;DI_MMBD4148W;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode .MODEL DI_MMBD4148W D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u + CJO=1.72p M=0.333 N=2.34 TT=5.76n ) *SRC=MMBD4448;DI_MMBD4448;Diodes;Si; 75.0V 0.250A 4.00ns Diodes Inc. Switching Diode .MODEL DI_MMBD4448 D ( IS=300n RS=0.422 BV=75.0 IBV=2.50u + CJO=1.99p M=0.333 N=2.77 TT=5.76n ) *SRC=MMBD4448H;DI_MMBD4448H;Diodes;Si; 80.0V 0.250A 4.00ns Diodes Inc. Switching Diode .MODEL DI_MMBD4448H D ( IS=300n RS=0.422 BV=80.0 IBV=100n + CJO=1.99p M=0.333 N=2.77 TT=5.76n ) *SRC=MMBD4448HADW;DI_MMBD4448HADW;Diodes;Si; 80.0V 0.500A 1.50ns Diodes Inc. Switching - model for one node of four .MODEL DI_MMBD4448HADW D ( IS=1.12n RS=84.0m BV=80.0 IBV=100n + CJO=2.92p M=0.333 N=1.70 TT=2.16n ) *SRC=MMBD4448HAQW;DI_MMBD4448HAQW;Diodes;Si; 80.0V 0.500A 1.50ns Diodes Inc. Switching - model for one node of four .MODEL DI_MMBD4448HAQW D ( IS=1.12n RS=84.0m BV=80.0 IBV=100n + CJO=2.92p M=0.333 N=1.70 TT=2.16n ) *SRC=MMBD4448HCQW;DI_MMBD4448HCQW;Diodes;Si; 80.0V 0.500A 1.50ns Diodes Inc. Switching - model for one node of four .MODEL DI_MMBD4448HCQW D ( IS=1.12n RS=84.0m BV=80.0 IBV=100n + CJO=2.92p M=0.333 N=1.70 TT=2.16n ) *SRC=MMBD4448HSDW;DI_MMBD4448HSDW;Diodes;Si; 80.0V 0.500A 1.50ns Diodes Inc. Switching - model for one node of four .MODEL DI_MMBD4448HSDW D ( IS=1.12n RS=84.0m BV=80.0 IBV=100n + CJO=2.92p M=0.333 N=1.70 TT=2.16n ) ********************************************************************************************************************************************** *SRC=MMBD4448HT;DI_MMBD4448HT;Diodes;Si; 80.0V 0.500A 1.50ns Diodes Inc. Switching .MODEL DI_MMBD4448HT D ( IS=1.12n RS=84.0m BV=80.0 IBV=100n + CJO=2.92p M=0.333 N=1.70 TT=2.16n ) ******************************************************************************************************************************************** ********************************************************************************************************************************************** *SRC=MMBD4448HTA;DI_MMBD4448HTA;Diodes;Si; 80.0V 0.500A 1.50ns Diodes Inc. Switching - One node of two .MODEL DI_MMBD4448HTA D ( IS=1.12n RS=84.0m BV=80.0 IBV=100n + CJO=2.92p M=0.333 N=1.70 TT=2.16n ) ********************************************************************************************************************************************** ********************************************************************************************************************************************** *SRC=MMBD4448HTC;DI_MMBD4448HTC;Diodes;Si; 80.0V 0.500A 1.50ns Diodes Inc. Switching - One node of two .MODEL DI_MMBD4448HTC D ( IS=1.12n RS=84.0m BV=80.0 IBV=100n + CJO=2.92p M=0.333 N=1.70 TT=2.16n ) ********************************************************************************************************************************************** ********************************************************************************************************************************************** *SRC=MMBD4448HTS;DI_MMBD4448HTS;Diodes;Si; 80.0V 0.500A 1.50ns Diodes Inc. Switching - One node of two .MODEL DI_MMBD4448HTS D ( IS=1.12n RS=84.0m BV=80.0 IBV=100n + CJO=2.92p M=0.333 N=1.70 TT=2.16n ) ********************************************************************************************************************************************** *SRC=MMBD4448HTW;DI_MMBD4448HTW;Diodes;Si; 80.0V 0.500A 1.50ns Diodes Inc. Switching - model for one node of three .MODEL DI_MMBD4448HTW D ( IS=1.12n RS=84.0m BV=80.0 IBV=100n + CJO=2.92p M=0.333 N=1.70 TT=2.16n ) *SRC=MMBD4448HW;DI_MMBD4448HW;Diodes;Si; 80.0V 0.500A 4.00ns Diodes Inc. Switching Diode .MODEL DI_MMBD4448HW D ( IS=77.0n RS=84.0m BV=80.0 IBV=100n + CJO=1.99p M=0.333 N=2.37 TT=5.76n ) *SRC=MMBD4448V;DI_MMBD4448V;Diodes;Si; 80.0V 0.500A 4.00ns Diodes Inc. Switching - one element of device .MODEL DI_MMBD4448V D ( IS=4.77n RS=84.4m BV=80.0 IBV=100n + CJO=1.99p M=0.333 N=1.95 TT=5.76n ) *SRC=MMBD4448W;DI_MMBD4448W;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode .MODEL DI_MMBD4448W D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u + CJO=1.72p M=0.333 N=2.34 TT=5.76n ) *SRC=MMBD7000;DI_MMBD7000;Diodes;Si; 75.0V 0.300A 4.00us Diodes Inc. .MODEL DI_MMBD7000 D ( IS=5.08n RS=0.140 BV=75.0 IBV=2.00u + CJO=2.00p M=0.333 N=2.03 TT=5.76u ) *SRC=MMBD914;DI_MMBD914;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching .MODEL DI_MMBD914 D ( IS=126n RS=0.140 BV=75.0 IBV=1.00u + CJO=2.65p M=0.333 N=2.60 TT=5.76n ) *SRC=SDA006;DI_SDA006;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Databus Transient Suppressor - Model is for one Diode Element .MODEL DI_SDA006 D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u + CJO=1.72p M=0.333 N=2.34 TT=5.76n ) *SRC=DLPA004;DLPA004;Diodes;Si; 85.0V 0.300A 3.00us DIODES Switching Diodes .MODEL DLPA004 D ( IS=42.4p RS=0.140 BV=85.0 IBV=2.50u + CJO=2.00p M=0.333 N=1.70 TT=4.32u ) *SRC=MMBD7000HS;MMBD7000HS;Diodes;Si; 100V 0.300A 4.00ns DIODES Switching Diode .MODEL MMBD7000HS D ( IS=412p RS=0.140 BV=100 IBV=3.00u + CJO=2.00p M=0.333 N=1.70 TT=5.76n ) *SRC=MMBD7000HC;MMBD7000HC;Diodes;Si; 100V 0.300A 4.00ns DIODES Switching Diode .MODEL MMBD7000HC D ( IS=412p RS=0.140 BV=100 IBV=3.00u + CJO=2.00p M=0.333 N=1.70 TT=5.76n ) *SRC=MMBD5004BRM;MMBD5004BRM;Diodes;Si; 400V 1.25A 50.0ns DIODES Switching diodes .MODEL MMBD5004BRM D ( IS=128n RS=33.6m BV=400 IBV=5.00u + CJO=2.00p M=0.333 N=2.62 TT=72.0n ) *SRC=BAS521;BAS521;Diodes;Si; 300V 0.250A 50.0ns DIODES Switching Diode .MODEL BAS521 D ( IS=74.8n RS=0.288 BV=300 IBV=150n + CJO=810f M=0.333 N=2.41 TT=72.0n ) *SRC=BAS521LP;BAS521LP;Diodes;Si; 325V 0.250A 50.0ns DIODES Switching Diode .MODEL BAS521LP D ( IS=74.8n RS=0.288 BV=325 IBV=150n + CJO=810f M=0.333 N=2.41 TT=72.0n ) *SRC=BAW101S;BAW101S;Diodes;Si; 300V 0.250A 50.0ns DIODES Switching Diode .MODEL BAW101S D ( IS=74.8n RS=0.288 BV=300 IBV=150n + CJO=700f M=0.333 N=2.41 TT=72.0n ) *SRC=BAW101V;BAW101V;Diodes;Si; 325V 0.250A 50.0ns DIODES Switching Diode .MODEL BAW101V D ( IS=74.8n RS=0.288 BV=325 IBV=150n + CJO=700f M=0.333 N=2.41 TT=72.0n ) *SRC=MMBD5004A/C/S; 400V 0.3A 50.0ns Diodes Inc. High Voltage Switching Diode D1 1 = A 2 = C DI_MMBD5004ACS .MODEL DI_MMBD5004ACS D + IS = 10n + N = 2.02 + BV = 400 + IBV = 1.00u + RS = 0.7 + CJO = 0.6p + VJ = 60m + M = 35m + FC = 0.5 + TT = 50n *SRC=MMBD5004A/C/S; 400V 0.3A 50.0ns Diodes Inc. High Voltage Switching Diode D1 1 = A 2 = C DI_MMBD5004ACS .MODEL DI_MMBD5004ACS D + IS = 10n + N = 2.02 + BV = 400 + IBV = 1.00u + RS = 0.7 + CJO = 0.6p + VJ = 60m + M = 35m + FC = 0.5 + TT = 50n *SRC=MMBD5004A/C/S; 400V 0.3A 50.0ns Diodes Inc. High Voltage Switching Diode D1 1 = A 2 = C DI_MMBD5004ACS .MODEL DI_MMBD5004ACS D + IS = 10n + N = 2.02 + BV = 400 + IBV = 1.00u + RS = 0.7 + CJO = 0.6p + VJ = 60m + M = 35m + FC = 0.5 + TT = 50n *SRC=BAV5004LP; 400V 0.3A 50.0ns Diodes Inc. High Voltage Switching Diode D1 1 = A 2 = C DI_BAV5004LP .MODEL DI_BAV5004LP D + IS = 10n + N = 2.15 + BV = 400 + IBV = 1.00u + RS = 0.6 + CJO = 0.90p + VJ = 55m + M = 28m + FC = 0.5 + TT = 50n *SRC=1SS361UDJ; 80V 0.3A 4.0ns Diodes Inc. Switching Diode D1 1 = A 2 = C DI_1SS361UDJ .MODEL DI_1SS361UDJ D + IS = 2.0n + N = 1.83 + BV = 80 + IBV = 1.00u + RS = 0.7 + CJO = 0.71p + VJ = 5m + M = 9m + FC = 0.5 + TT = 4n *SRC=1N4148W;1N4148W;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. .MODEL 1N4148W D ( IS=10.4n RS=51.5m BV=75.0 IBV=1.00u + CJO=2.00p M=0.333 N=2.07 TT=5.76n ) *SRC=BAV99DW;DI_BAV99DW;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode, Quad, Model for one element .MODEL DI_BAV99DW D ( IS=412p RS=0.140 BV=75.0 IBV=2.50u + CJO=2.00p M=0.333 N=1.70 TT=5.76n ) *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *DATE=2/07/2015 *VERSION=1 * .MODEL DLLFSD01LP3 D(IS=30p RS=.6 N=1 BV=105 IBV=0.36m IKF=1u + EG=1.1 ISR=.8n CJO=.5p VJ=0.4 M=0.48 TRS1=0.0001 TT=2n) * (c) 2015 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *SRC=1N4148W;1N4148W;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. .MODEL 1N4148W D ( IS=10.4n RS=51.5m BV=75.0 IBV=1.00u + CJO=2.00p M=0.333 N=2.07 TT=5.76n ) *SRC=1N4148WS;1N4148WS;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode .MODEL 1N4148WS D ( IS=10.4n RS=51.5m BV=75.0 IBV=1.00u + CJO=2.00p M=0.333 N=2.07 TT=5.76n ) *SRC=BAS116;DI_BAS116;Diodes;Si; 60.0V 0.215A 3.00us Diodes Inc. Switching Diode .MODEL DI_BAS116 D ( IS=4.53u RS=0.383 BV=60.0 IBV=5.00n + CJO=1.72p M=0.333 N=4.07 TT=4.32u ) *SRC=BAS116T;DI_BAS116T;Diodes;Si; 85.0V 0.215A 3.00us Diodes Inc. Switching Diode .MODEL DI_BAS116T D ( IS=10.5p RS=0.196 BV=85.0 IBV=5.00n + CJO=2.00p M=0.333 N=1.61 TT=4.32u ) *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=13/11/2013 *VERSION=1 .model BAS116LP3 D(IS=4f RS=0.1 CJO=2.37p M=0.4 VJ=0.6 ISR=.005n N=1.05 IKF=1m + BV=85 IBV=100u TT=40n EG=1.14 TRS1=.1m) * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *SRC=BAS116UDJ; 400V 0.3A 50.0ns Diodes Inc. Switching Diode D1 1 = A 2 = C DI_BAS116UDJ .MODEL DI_BAS116UDJ D + IS = 1.1p + N = 1.42 + BV = 400 + IBV = 1.00u + RS = 0.350 + CJO = 1.95p + VJ = 60m + M = 173m + FC = 0.5 + TT = 50n *SRC=1N4448HLP;DI_1N4448HLP;Diodes;Si; 80.0V 0.250A 4.00ns Diodes Inc. Switching Diode .MODEL DI_1N4448HLP D ( IS=5.31n RS=0.761 BV=80.0 IBV=100n + CJO=3.56p M=0.333 N=1.90 TT=5.76n ) *SRC=DMN55D0UT;DI_DMN55D0UT;MOSFETs N;Enh;50.0V 0.160A 4.00ohms Diodes Inc MOSFET .MODEL DI_DMN55D0UT NMOS( LEVEL=1 VTO=1.00 KP=0.324 GAMMA=1.24 + PHI=.75 LAMBDA=133u RD=0.560 RS=0.560 + IS=80.0f PB=0.800 MJ=0.460 CBD=9.60p + CBS=11.5p CGSO=25.2n CGDO=21.0n CGBO=204n ) * -- Assumes default L=100U W=100U -- *SRC=BC857BV;DI_BC857BV;BJTs PNP; Si; 45.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC857BV PNP (IS=10.2f NF=1.00 BF=650 VAF=121 + IKF=42.5m ISE=2.25p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.105 RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=37.6p VJE=1.10 MJE=0.500 CJC=12.1p VJC=0.300 + MJC=0.300 TF=499p TR=95.9n EG=1.12 )=499p TR=95.9n EG=1.12 ) *SRC=DMN55D0UT;DI_DMN55D0UT;MOSFETs N;Enh;50.0V 0.160A 4.00ohms Diodes Inc MOSFET .MODEL DI_DMN55D0UT NMOS( LEVEL=1 VTO=1.00 KP=0.324 GAMMA=1.24 + PHI=.75 LAMBDA=133u RD=0.560 RS=0.560 + IS=80.0f PB=0.800 MJ=0.460 CBD=9.60p + CBS=11.5p CGSO=25.2n CGDO=21.0n CGBO=204n ) * -- Assumes default L=100U W=100U -- *SRC=BC857BV;DI_BC857BV;BJTs PNP; Si; 45.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC857BV PNP (IS=10.2f NF=1.00 BF=650 VAF=121 + IKF=42.5m ISE=2.25p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.105 RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=37.6p VJE=1.10 MJE=0.500 CJC=12.1p VJC=0.300 + MJC=0.300 TF=499p TR=95.9n EG=1.12 )=499p TR=95.9n EG=1.12 ) *SRC=DMN55D0UT;DI_DMN55D0UT;MOSFETs N;Enh;50.0V 0.160A 4.00ohms Diodes Inc MOSFET .MODEL DI_DMN55D0UT NMOS( LEVEL=1 VTO=1.00 KP=0.324 GAMMA=1.24 + PHI=.75 LAMBDA=133u RD=0.560 RS=0.560 + IS=80.0f PB=0.800 MJ=0.460 CBD=9.60p + CBS=11.5p CGSO=25.2n CGDO=21.0n CGBO=204n ) * -- Assumes default L=100U W=100U -- *SRC=BC847BVC;DI_BC847BVC;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes, Inc. transistor .MODEL DI_BC847BVC NPN (IS=3.75f NF=1.00 BF=1.61k VAF=121 + IKF=8.79m ISE=8.38p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=90.0m RE=0.765 RB=3.06 RC=0.306 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 + MJC=0.300 TF=520p TR=78.9n EG=1.12 ) *SRC=DMN55D0UT;DI_DMN55D0UT;MOSFETs N;Enh;50.0V 0.160A 4.00ohms Diodes Inc MOSFET .MODEL DI_DMN55D0UT NMOS( LEVEL=1 VTO=1.00 KP=0.324 GAMMA=1.24 + PHI=.75 LAMBDA=133u RD=0.560 RS=0.560 + IS=80.0f PB=0.800 MJ=0.460 CBD=9.60p + CBS=11.5p CGSO=25.2n CGDO=21.0n CGBO=204n ) * -- Assumes default L=100U W=100U -- *SRC=BC847BVC;DI_BC847BVC;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes, Inc. transistor .MODEL DI_BC847BVC NPN (IS=3.75f NF=1.00 BF=1.61k VAF=121 + IKF=8.79m ISE=8.38p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=90.0m RE=0.765 RB=3.06 RC=0.306 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 + MJC=0.300 TF=520p TR=78.9n EG=1.12 ) *ZETEX BSP75N Spice Model v1.0 Last revision 22/02/07 * .SUBCKT BSP75 1 2 3 *------connections-------D-G-S * M1 31 4 33 33 Mmod1 M2 4 4 43 3 Mmod2 M=25 M3 41 37 38 38 Mmod3 M4 16 18 17 3 Mmod2 M=200 M5 15 16 17 3 Mmod2 M=200 M6 14 15 3 3 Mmod2 M=400 R1 2 4 20E3 R2 41 31 0.01 R3 3 33 0.25 R4 1 3 10E6 R5 37 3 20E3 R6 2 13 15E3 R7 2 12 1.7E3 R8 12 10 30E3 R9 12 11 28E3 R10 11 3 2300 R11 13 16 35E3 R12 13 15 35E3 R13 17 3 2.5E3 R14 4 14 300 R15 18 45 50E3 C1 4 33 200E-12 C2 4 1 60E-12 C3 35 33 200E-12 S1 43 3 41 42 Smod1 S2 4 35 31 4 Smod2 S3 34 35 31 4 Smod3 E1 42 3 2 3 0.22 E2 34 33 4 33 1 E3 18 19 11 10 100 D1 5 2 Dmod1 D2 5 3 Dmod1 D3 38 4 Dmod3 D4 3 12 Dmod4 D5 3 13 Dmod5 D6 10 3 Dmod6 D7 37 41 Dmod7 D8 3 1 Dmod8 D9 3 45 Dmod2 * * *Distributed Thermal Model - minimum copper Rth=208 and infin;C/W *To enable thermal feedback change *G1 to G1 V1 1 41 0 *G1 3 20 VALUE = {ABS( I(V1) * V(1,3) ) } R21 20 21 0.07 R22 21 22 0.17 R23 22 23 0.37 R24 23 24 1.34 R25 24 25 2.80 R26 25 26 11.19 R27 26 27 48.10 R28 27 28 78.30 R29 28 29 65.99 C21 20 21 7.45E-5 C22 21 22 2.98E-4 C23 22 23 8.94E-4 C24 23 24 2.23E-3 C25 24 25 1.97E-2 C26 25 26 3.58E-2 C27 26 27 5.61E-2 C28 27 28 4.47E-1 C29 28 29 1.36 V2 29 3 25 E4 19 3 22 29 0.201 *Junction temperature node 20 at 1V=1 and infin;C *Ambient temperature set V2 at 1V=1 and infin;C * * .MODEL Mmod1 NMOS (LEVEL=1 VTO=1.95 IS=1E-15 KP=2.2) .MODEL Mmod2 NMOS (LEVEL=1 VTO=2.5 CGDO=5E-7 CGSO=5E-7) .MODEL Mmod3 NMOS (LEVEL=1 VTO=1.95 IS=1E-15 KP=0.002 RS=150 CGDO=5E-7 CGSO=5E-7) .MODEL Dmod1 D (RS=11 BV=11) .MODEL Dmod2 D (RS=1 BV=5 CJO=10p) .MODEL Dmod3 D (RS=10 BV=12) .MODEL Dmod4 D (RS=10 BV=4) .MODEL Dmod5 D (RS=10 BV=7) .MODEL Dmod6 D (IS=1E-14 RS=10 BV=12) .MODEL Dmod7 D (RS=1 BV=65) .MODEL Dmod8 D (IS=6E-13 RS=.13 N=1.01 BV=82 CJO=200E-12) .MODEL Smod1 VSWITCH RON=700 ROFF=1E6 VON=0.5 VOFF=-1.5 .MODEL Smod2 VSWITCH RON=1 ROFF=1E6 VON=-0.5 VOFF=0.5 .MODEL Smod3 VSWITCH RON=1 ROFF=1E6 VON=0.5 VOFF=-0.5 .ENDS * *$ * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=27/11/09 *VERSION=2 *PIN_ORDER D G S * .SUBCKT ZXMS6001N3 1 2 3 M1 31 4 33 33 Mmod1 M2 4 4 43 3 Mmod2 M=25 M3 41 37 38 38 Mmod3 M4 16 45 17 3 Mmod2 M=200 M5 15 16 17 3 Mmod2 M=200 M6 14 15 3 3 Mmod2 M=400 R1 2 4 20E3 R2 41 31 0.01 R3 3 33 0.25 R4 1 3 10E6 R5 37 3 20E3 R6 2 13 15E3 R7 2 3 26E3 R8 12 10 30E3 R9 12 11 28E3 R10 11 3 2.3E3 R11 13 16 35E3 R12 13 15 35E3 R13 17 3 2.5E3 R14 4 14 300 R15 18 45 50E3 R16 44 12 1.2E3 C1 4 33 400E-12 C2 4 1 75E-12 C3 35 36 400E-12 C4 16 3 200E-12 S1 43 3 41 42 Smod1 S2 4 35 31 4 Smod2 S3 34 35 31 4 Smod3 E1 42 3 2 3 0.22 E2 34 33 4 33 1 E3 18 19 11 10 100 E4 44 3 2 3 1 E6 36 3 31 4 1 D1 5 2 Dmod1 D2 5 3 Dmod1 D3 38 4 Dmod3 D4 3 12 Dmod4 D5 3 13 Dmod5 D6 10 3 Dmod6 D7 37 41 Dmod7 D8 3 1 Dmod8 D9 3 45 Dmod2 V1 1 41 0 * *Distributed Thermal Model for device mounted on minimum copper Rth=208°C/W *To enable thermal feedback for transient analysis only change **G1 to G1 *Transient junction temperature may be observed at node 100 where 1V=1°C * **G1 3 20 VALUE = {ABS( I(V1) * V(1,3) ) } R21 20 21 0.07 R22 21 22 0.17 R23 22 23 0.37 R24 23 24 1.34 R25 24 25 2.80 R26 25 26 11.19 R27 26 27 48.10 R28 27 28 78.30 R29 28 29 65.99 C21 20 21 7.45E-5 C22 21 22 2.98E-4 C23 22 23 8.94E-4 C24 23 24 2.23E-3 C25 24 25 1.97E-2 C26 25 26 3.58E-2 C27 26 27 5.61E-2 C28 27 28 4.47E-1 C29 28 29 1.36 V2 29 3 25 E5 19 3 22 29 0.201 *Junction temperature at node 20 is 1V/°C *Ambient temperature set V2 at 1V per 1°C * * .MODEL Mmod1 NMOS (LEVEL=1 VTO=1.95 IS=1E-15 KP=2.2 ) .MODEL Mmod2 NMOS (LEVEL=1 VTO=2.5) .MODEL Mmod3 NMOS (LEVEL=1 VTO=1.95 IS=1E-15 KP=0.002 RS=150) .MODEL Dmod1 D (RS=11 BV=11) .MODEL Dmod2 D (RS=1 BV=5 CJO=10p) .MODEL Dmod3 D (RS=10 BV=12) .MODEL Dmod4 D (RS=10 BV=4) .MODEL Dmod5 D (RS=10 BV=7) .MODEL Dmod6 D (IS=1E-14 RS=10 BV=12) .MODEL Dmod7 D (RS=1 BV=65) .MODEL Dmod8 D (IS=6E-13 RS=.13 N=1.01 BV=82 CJO=200E-12) .MODEL Smod1 VSWITCH RON=6000 ROFF=1E6 VON=0.5 VOFF=-1.5 .MODEL Smod2 VSWITCH RON=1 ROFF=1E6 VON=-0.5 VOFF=0.5 .MODEL Smod3 VSWITCH RON=1 ROFF=1E6 VON=0.5 VOFF=-0.5 .ENDS * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=08/12/2009 *VERSION=2 *PIN_ORDER D G S * .SUBCKT ZXMS6004FF 1 2 3 M1 31 40 33 33 Mmod1 M2 4 4 21 3 Mmod2 M=40 M3 41 37 38 38 Mmod3 M6 14 51 3 3 Mmod2 M=400 R1 2 4 60E3 R2 41 31 0.01 R3 3 33 0.35 R4 41 3 10E6 R5 37 3 20E3 R7 2 12 600 R8 12 10 50E3 R10 50 3 1000 R11 12 52 98E3 R12 3 52 2E3 R13 51 52 120E3 R14 4 14 500 R15 110 111 Rmod1 1 C1 4 33 200E-12 C2 4 31 50E-12 C3 35 31 200E-12 C4 52 3 50E-12 S1 21 3 41 22 Smod1 S2 4 35 31 4 Smod2 S3 34 35 31 4 Smod3 E1 22 3 2 3 0.22 E2 34 33 4 33 1 E3 19 3 103 109 4E-3 E4 19 50 value={V(10)-V(52)-0.50} E5 51 3 value={V(12)*((TANH(V(50)*100)+1)/2)} E6 4 40 100 3 4.2e-3 E7 109 3 value={(V(110)*1000)+27} D1 5 2 Dmod1 D2 5 3 Dmod1 D3 38 4 Dmod3 D4 3 12 Dmod4 D5 13 3 Dmod6 D6 10 13 Dmod6 D7 37 41 Dmod7 D8 3 41 Dmod8 V1 1 41 0 V2 3 111 1 I1 3 110 1 * * Distributed Thermal Model 15mm x 15mm x 1.6mm FR4 1oz Cu * To enable thermal feedback for transient analysis only change **G1 to G1 * Transient junction temperature may be observed at node 100 where 1V=1°C * **G1 3 100 value={ABS( I(V1) * V(1,3) ) } R21 100 101 0.23 R22 101 102 0.275 R23 102 103 1.265 R24 103 104 2.875 R25 104 105 10.925 R26 105 106 28.175 R27 106 107 29.67 R28 107 108 11.73 R29 108 109 67.85 C21 100 101 2.17E-5 C22 101 102 1.09E-4 C23 102 103 2.37E-4 C24 103 104 6.61E-4 C25 104 105 2.563E-3 C26 105 106 6.744E-3 C27 106 107 2.7974E-2 C28 107 108 0.8525 C29 108 109 0.8843 * .MODEL Mmod1 NMOS (LEVEL=1 VTO=1.35 IS=1E-15 KP=10) .MODEL Mmod2 NMOS (LEVEL=1 VTO=2.7 ) .MODEL Mmod3 NMOS (LEVEL=1 VTO=1.95 IS=1E-15 KP=0.001 RS=10) .MODEL Dmod1 D (RS=11 BV=11) .MODEL Dmod2 D (RS=1 BV=5 CJO=10p) .MODEL Dmod3 D (RS=10 BV=12) .MODEL Dmod4 D (RS=10 BV=6) .MODEL Dmod5 D (RS=10 BV=7) .MODEL Dmod6 D (IS=1E-14 RS=10 BV=12) .MODEL Dmod7 D (RS=1 BV=65) .MODEL Dmod8 D (IS=1E-13 RS=0.05 N=1.005 BV=90 CJO=212E-12 M=0.5 VJ=0.75) .MODEL Smod1 VSWITCH RON=100 ROFF=1E6 VON=0.5 VOFF=0 .MODEL Smod2 VSWITCH RON=1 ROFF=1E6 VON=-0.5 VOFF=0.5 .MODEL Smod3 VSWITCH RON=1 ROFF=1E6 VON=0.5 VOFF=-0.5 .MODEL Rmod1 RES (TC1=1e-3) .ENDS * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=12/11/2009 *VERSION=1 *PIN_ORDER D G S * .SUBCKT BSP75G 1 2 3 M1 31 4 33 33 Mmod1 M2 4 4 43 3 Mmod2 M=25 M3 41 37 38 38 Mmod3 M4 16 18 17 3 Mmod2 M=200 M5 15 16 17 3 Mmod2 M=200 M6 14 15 3 3 Mmod2 M=400 R1 2 4 20E3 R2 41 31 0.01 R3 3 33 0.25 R4 1 3 10E6 R5 37 3 20E3 R6 2 13 15E3 R7 2 12 1.7E3 R8 12 10 30E3 R9 12 11 28E3 R10 11 3 2300 R11 13 16 35E3 R12 13 15 35E3 R13 17 3 2.5E3 R14 4 14 300 R15 18 45 50E3 C1 4 33 200E-12 C2 4 1 60E-12 C3 35 33 200E-12 S1 43 3 41 42 Smod1 S2 4 35 31 4 Smod2 S3 34 35 31 4 Smod3 E1 42 3 2 3 0.22 E2 34 33 4 33 1 E3 18 19 11 10 100 D1 5 2 Dmod1 D2 5 3 Dmod1 D3 38 4 Dmod3 D4 3 12 Dmod4 D5 3 13 Dmod5 D6 10 3 Dmod6 D7 37 41 Dmod7 D8 3 1 Dmod8 D9 3 45 Dmod2 * *Distributed Thermal Model for device mounted on minimum copper Rth=208°C/W *To enable thermal feedback for transient analysis change **G1 to G1 V1 1 41 0 **G1 3 20 VALUE = {ABS( I(V1) * V(1,3) ) } R21 20 21 0.07 R22 21 22 0.17 R23 22 23 0.37 R24 23 24 1.34 R25 24 25 2.80 R26 25 26 11.19 R27 26 27 48.10 R28 27 28 78.30 R29 28 29 65.99 C21 20 21 7.45E-5 C22 21 22 2.98E-4 C23 22 23 8.94E-4 C24 23 24 2.23E-3 C25 24 25 1.97E-2 C26 25 26 3.58E-2 C27 26 27 5.61E-2 C28 27 28 4.47E-1 C29 28 29 1.36 V2 29 3 25 E4 19 3 22 29 0.201 *Junction temperature at node 20 is 1V/°C *Ambient temperature set V2 at 1V per 1°C * .MODEL Mmod1 NMOS (LEVEL=1 VTO=1.95 IS=1E-15 KP=2.2) .MODEL Mmod2 NMOS (LEVEL=1 VTO=2.5 CGDO=5E-7 CGSO=5E-7) .MODEL Mmod3 NMOS (LEVEL=1 VTO=1.95 IS=1E-15 KP=0.002 RS=150 + CGDO=5E-7 CGSO=5E-7) .MODEL Dmod1 D (RS=11 BV=11) .MODEL Dmod2 D (RS=1 BV=5 CJO=10p) .MODEL Dmod3 D (RS=10 BV=12) .MODEL Dmod4 D (RS=10 BV=4) .MODEL Dmod5 D (RS=10 BV=7) .MODEL Dmod6 D (IS=1E-14 RS=10 BV=12) .MODEL Dmod7 D (RS=1 BV=65) .MODEL Dmod8 D (IS=6E-13 RS=.13 N=1.01 BV=82 CJO=200E-12) .MODEL Smod1 VSWITCH RON=3.9E3 ROFF=1E6 VON=0.5 VOFF=-1.5 .MODEL Smod2 VSWITCH RON=1 ROFF=1E6 VON=-0.5 VOFF=0.5 .MODEL Smod3 VSWITCH RON=1 ROFF=1E6 VON=0.5 VOFF=-0.5 .ENDS * *$ *ZETEX ZXM61N03F Spice Model v1.0 Last Revised 23/1/03 * .SUBCKT ZXM61N03F 3 4 5 *----connections----D-G-S * M1 6 2 8 8 MOSMOD M2 6 2 8 8 MOSMODS RG 4 2 6 RIN 2 8 200E6 RD 3 6 RDSMOD 0.15 RS 8 5 RDSMOD 0.024 RL 3 5 35E6 C1 2 8 135E-12 C2 2 3 17E-12 C3 15 14 175E-12 C4 16 8 183E-12 D1 5 3 DMOD1 S1 2 15 14 13 SMOD1a S2 13 15 14 13 SMOD1b S3 16 13 13 8 SMOD2a S4 16 2 13 8 SMOD2b Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 .MODEL MOSMOD NMOS VTO=2.2 IS=1E-15 KP=2.5 CBD=85E-12 LAMBDA=4.9E-3 .MODEL MOSMODS NMOS VTO=1.8 IS=1E-15 KP=0.02 .MODEL DMOD1 D IS=1E-13 RS=0.15 BV=38 IBV=1E-6 TT=9e-9 .MODEL SMOD1a VSWITCH RON=1e-2 ROFF=1e4 VON=-1.5 VOFF=1.5 .MODEL SMOD1b VSWITCH RON=1e-2 ROFF=1e4 VON=1.5 VOFF=-1.5 .MODEL SMOD2a VSWITCH RON=1e2 ROFF=1e4 VON=-1.5 VOFF=-3.5 .MODEL SMOD2b VSWITCH RON=1e-2 ROFF=1e4 VON=-3.5 VOFF=-1.5 .MODEL RDSMOD RES (TC1=3E-3 TC2=2E-5) .ENDS ZXM61N03F * *$ * *ZETEX ZXM62N03G Spice Model v1.0 Last Revised 24/1/03 * .SUBCKT ZXM62N03G 3 4 5 *----connections----D-G-S * M1 6 2 8 8 MOSMOD M2 6 2 8 8 MOSMODS RG 4 2 5 RIN 2 8 200E6 RD 3 6 RDSMOD 0.051 RS 8 5 RDSMOD 0.0093 RL 3 5 35E6 C1 2 8 349E-12 C2 2 3 43E-12 C3 15 14 453E-12 C4 16 8 474E-12 D1 5 3 DMOD1 S1 2 15 14 13 SMOD1a S2 13 15 14 13 SMOD1b S3 16 13 13 8 SMOD2a S4 16 2 13 8 SMOD2b Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 .MODEL MOSMOD NMOS VTO=2.2 IS=1E-15 KP=6.5 CBD=221E-12 LAMBDA=4.9E-3 .MODEL MOSMODS NMOS VTO=1.8 IS=1E-15 KP=0.04 .MODEL DMOD1 D IS=2.6E-13 RS=0.058 BV=38 IBV=1E-6 TT=21e-9 .MODEL SMOD1a VSWITCH RON=1e-2 ROFF=1e4 VON=-1.5 VOFF=1.5 .MODEL SMOD1b VSWITCH RON=1e-2 ROFF=1e4 VON=1.5 VOFF=-1.5 .MODEL SMOD2a VSWITCH RON=1e2 ROFF=1e4 VON=-1.5 VOFF=-3.5 .MODEL SMOD2b VSWITCH RON=1e-2 ROFF=1e4 VON=-3.5 VOFF=-1.5 .MODEL RDSMOD RES (TC1=3E-3 TC2=2E-5) .ENDS ZXM62N03G * *$ * *ZETEX ZXMD63N03X Spice Model v1.1 Last Revised 23/1/03 * .SUBCKT ZXMD63N03X 3 4 5 *----connections----D-G-S * M1 6 2 8 8 MOSMOD M2 6 2 8 8 MOSMODS RG 4 2 5 RIN 2 8 200E6 RD 3 6 RDSMOD 0.065 RS 8 5 RDSMOD 0.012 RL 3 5 35E6 C1 2 8 269E-12 C2 2 3 33E-12 C3 15 14 349E-12 C4 16 8 365E-12 D1 5 3 DMOD1 S1 2 15 14 13 SMOD1a S2 13 15 14 13 SMOD1b S3 16 13 13 8 SMOD2a S4 16 2 13 8 SMOD2b Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 .MODEL MOSMOD NMOS VTO=2.2 IS=1E-15 KP=5 CBD=170E-12 LAMBDA=4.9E-3 .MODEL MOSMODS NMOS VTO=1.8 IS=1E-15 KP=0.033 .MODEL DMOD1 D IS=2E-13 RS=0.075 BV=38 IBV=1E-6 TT=21e-9 .MODEL SMOD1a VSWITCH RON=1e-2 ROFF=1e4 VON=-1.5 VOFF=1.5 .MODEL SMOD1b VSWITCH RON=1e-2 ROFF=1e4 VON=1.5 VOFF=-1.5 .MODEL SMOD2a VSWITCH RON=1e2 ROFF=1e4 VON=-1.5 VOFF=-3.5 .MODEL SMOD2b VSWITCH RON=1e-2 ROFF=1e4 VON=-3.5 VOFF=-1.5 .MODEL RDSMOD RES (TC1=3E-3 TC2=2E-5) .ENDS ZXMD63N03X * *$ * *ZETEX ZXMN3A01F Spice Model v2.0 Last Revised 22/2/05 * .SUBCKT ZXMN3A01F 30 40 50 *------connections-------D-G-S M1 6 2 5 5 Nmod L=1.16E-6 W=0.28 M2 5 2 5 6 Pmod L=1.3E-6 W=0.13 RG 4 2 5 RIN 2 5 1E12 RD 3 6 Rdmod 0.08 RL 3 5 3E9 C1 2 5 8.5E-12 C2 3 4 3E-12 D1 5 3 Dbodymod LD 3 30 0.5E-9 LG 4 40 1.0E-9 LS 5 50 1.0E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=5E17 VTO=2.3 +KP=15E-5 RS=.045 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1.5E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=6E-13 RS=.025 IKF=0.1 TRS1=1.5e-3 +CJO=85e-12 BV=33) .MODEL Rdmod RES (TC1=4.2e-3 TC2=1E-5) .ENDS ZXMN3A01F * *$ * *ZETEX ZXMN3A02X8 Spice Model v2.0 Last Revised 22/2/05 * * .SUBCKT ZXMN3A02X8 30 40 50 *----connections----D-G-S M1 6 2 7 7 Nmod M2 7 2 7 6 Pmod RG 4 2 3 RIN 2 5 1E12 RD 3 6 Rdmod 0.001 RS 7 5 Rdmod 0.018 RL 3 5 3E9 C1 2 5 8.5E-12 C2 3 2 3E-12 D1 5 3 Dbodymod LD 3 30 1.5E-9 LG 4 40 1.0E-9 LS 5 50 1.0E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E17 L=1.16E-6 W=2.3 VTO=2 +KP=5E-5 NFS=2E11 KAPPA=0.1 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1.5E16 L=1.3E-6 W=1.3 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=4E-12 RS=.014 IKF=3.6 TRS1=1.5e-3 +CJO=1070e-12 BV=33) .MODEL Rdmod RES (TC1=4e-3 TC2=1E-5) .ENDS * *$ * *ZETEX ZXMN3A03E6 Spice Model v2.0 Last revision 15/03/07 * .SUBCKT ZXMN3A03E6 30 40 50 *------connections-------D-G-S M1 6 20 5 5 Nmod M2 5 20 5 6 Pmod RG 4 2 1 RIN 2 5 1E12 RD 3 6 Rmod1 0.04 RL 3 5 1E8 C1 2 5 2E-11 C2 3 4 1E-12 D1 5 3 Dbodymod Egt1 2 20 21 5 1.0 Vgt1 5 22 1.0 Igt1 5 21 1.0 Rgt 21 22 Rmod2 1.8 LD 3 30 0.3E-9 LG 4 40 1.9E-9 LS 5 50 1.9E-9 .MODEL Nmod NMOS (LEVEL=3 L=0.7E-6 W=0.77 TOX=60E-9 NSUB=2.58E16 UO=1022) +VTO=1.2 KP=65E-6 GAMMA=1.61 PHI=0.74 RS=0.035 KAPPA=0.03 NFS=2.0E12 RD=0.03) .MODEL Pmod PMOS (LEVEL=3 L=1.2E-6 W=1.0 TOX=64E-9 NSUB=2.58E16 UO=396) .MODEL Dbodymod D (IS=1.5E-10 N=1.13 RS=0.06 IKF=0.3 XTI=0.1 TRS1=6E-3 +TIKF=6E-2 CJO=1E-12) .MODEL Rmod1 RES (TC1=1E-5 TC2=1E-6) .MODEL Rmod2 RES (TC1=4E-4 TC2=1E-6) .ENDS ZXMN3A03E6 * *$ * *ZETEX ZXMN3A04DN8 Spice Model v2.0 Last Revised 15/03/07 * .SUBCKT ZXMN3A04DN8 30 40 50 *------connections-------D-G-S M1 6 20 5 5 Nmod M2 5 20 5 6 Pmod RG 4 2 1.0 RIN 2 5 1E12 RD 3 6 Rmod1 0.01 RL 3 5 1E8 C1 2 5 6.2E-10 C2 3 4 1.5E-10 D1 5 3 Dbodymod Egt1 2 20 21 5 1.0 Vgt1 5 22 1.0 Igt1 5 21 1.0 Rgt 21 22 Rmod2 2.3 LD 3 30 1.5E-9 LG 4 40 1.2E-9 LS 5 50 1.2E-9 .MODEL Nmod NMOS (LEVEL=3 L=0.7E-6 W=2.183 TOX=64E-9 NSUB=3.07E16 +UO=389 RS=0.02 XJ=1.6e-6) .MODEL Pmod PMOS (LEVEL=3 L=1.2E-6 W=2.183 TOX=64E-9 NSUB=1.07E16 +UO=429 TPG=-1) .MODEL Dbodymod D (IS=6E-10 N=1.2 RS=0.03 IKF=1 TIKF=2 TRS1=4E-4 +XTI=0.1) .MODEL Rmod1 RES (TC1=1E-4 TC2=1E-6) .MODEL Rmod2 RES (TC1=-3E-4 TC2=-5E-6) .ENDS ZXMN3A04DN8 * *$ * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=25/02/2009 *VERSION=1 *PIN_ORDER D G S * .SUBCKT ZXMN3A04K 1 2 3 M11 20 21 22 22 Nnmod1 L=0.7E-6 W=2.183 M12 22 21 22 20 Pnmod1 L=1.2E-6 W=2.183 RG1 26 27 1.1 RIN1 21 22 1E12 RD1 20 24 Rnmod1 0.01 RS1 22 23 1E-6 RL1 23 24 1E8 C11 21 22 11E-10 C12 20 21 1E-12 D1 23 24 Dnmod1 Egt1 26 21 30 22 1 Vgt1 22 31 1 Igt1 22 30 1 Rgt1 30 31 Rnmod2 2.3 LD1 1 24 1.3E-9 LG1 2 27 2.4E-9 LS1 3 23 2.4E-9 .MODEL Nnmod1 NMOS (LEVEL=3 TOX=64E-9 NSUB=3.07E16 UO=389 RS=0.02 XJ=1.6e-6) .MODEL Pnmod1 PMOS (LEVEL=3 TOX=64E-9 NSUB=1.07E16 UO=429 TPG=-1) .MODEL Dnmod1 D (IS=6E-10 N=1.2 RS=0.03 IKF=1 TIKF=2 TRS1=4E-4 XTI=0.1) .MODEL Rnmod1 RES (TC1=10.7E-3 TC2=-4E-5) .MODEL Rnmod2 RES (TC1=-2.6E-3 TC2=-5E-6) .ENDS * *$ *ZETEX ZXMN3A06DN8 Spice Model v2.0 Last revision 15/3/07 * .SUBCKT ZXMN3A06DN8 30 40 50 *------connections-------D-G-S M1 6 2 5 5 Nmod L=1.16E-6 W=1.5 M2 5 2 5 6 Pmod L=1.3E-6 W=0.65 RG 4 2 2.5 RIN 2 5 1E12 RD 3 6 Rmod 0.012 RS 5 55 Rmod 0.012 RL 3 5 3E12 C1 2 5 300E-12 C2 3 4 3E-12 D1 5 3 Dbodymod LD 3 30 1.5E-9 LG 4 40 1.2E-9 LS 55 50 1.2E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=7.5E-8 NSUB=5E16 VTO= 1.5 +KP=1.25E-5 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1.5E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=8E-12 RS=.025 IKF=0.1 TRS1=1.5e-3 +CJO=158e-12 BV=33 TT=16e-9) .MODEL Rmod RES (TC1=2.8e-3 TC2=0.8E-5) .ENDS ZXMN3A06DN8 * *$ * *ZETEX ZXMN3A14F Spice Model v1.0 Last revision 31/5/06 * .SUBCKT ZXMN3A14F 30 40 50 *------connections-------D-G-S M1 6 2 5 5 Nmod L=1.16E-6 W=0.76 M2 5 2 5 6 Pmod L=1.3E-6 W=0.35 RG 4 2 4.5 RIN 2 5 1E12 RD 3 6 Rmod 0.04 RS 5 55 Rmod 0.015 RL 3 5 3E9 C1 2 5 8.5E-12 C2 3 4 3E-12 D1 5 3 Dbodymod LD 3 30 0.5E-9 LG 4 40 1.0E-9 LS 55 50 1.0E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=5E16 VTO=2.13 +KP=2.5E-5 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1.5E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=6E-13 RS=.025 IKF=0.1 TRS1=1.5e-3 +CJO=150e-12 BV=33 TT=12e-9) .MODEL Rmod RES (TC1=2.8e-3 TC2=0.8E-5) .ENDS ZXMN3A14F * *$ * *ZETEX ZXMN3B04N8 Spice Model v2.0 Last Revised 15/3/07 * .SUBCKT ZXMN3B04N8 30 40 50 *------connections-------D-G-S M1 6 2 5 5 Nmod L=1.16E-6 W=2.9 M2 5 2 5 6 Pmod L=1.3E-6 W=1.6 RG 4 2 1 RIN 2 5 1E12 RD 3 6 Rdmod 0.01 RL 3 5 3E9 C1 2 5 8.5E-12 C2 3 4 3E-12 D1 5 3 Dbodymod LD 3 30 1.3E-9 LG 4 40 1.2E-9 LS 5 50 1.2E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=3.7E-8 NSUB=3E17 VTO=1.32 +KP=15E-5 RS=.008 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=5E-8 NSUB=1.5E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=1E-11 RS=.01 IKF=.5 TRS1=3e-3 +CJO=85e-12 BV=33) .MODEL Rdmod RES (TC1=5.2e-3 TC2=1E-5) .ENDS ZXMN3B04N8 * *$ * *---------- DMN3007LSS Spice Model ---------- .SUBCKT DMN3007LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004231 RS 30 3 0.001 RG 20 2 0.7 CGS 2 3 2.344E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8.75E+005 ETA = 0.01118 VTO = 2.29 + TOX = 6E-008 NSUB = 7.825E+016 KP = 86.95 KAPPA = 256.4 U0 = 170.2 .MODEL DCGD D CJO = 2.253E-009 VJ = 0.3475 M = 0.4648 .MODEL DSUB D IS = 2.301E-010 N = 1.194 RS = 0.002878 BV = 35 CJO = 6.368E-010 VJ = 0.6415 M = 0.7534 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3007LSS Spice Model v1.1 Last Revised 2011/3/2 *SRC=DMN3010LSS;DI_DMN3010LSS;MOSFETs N;Enh;30.0V 16.0A 9.00mohms Diodes Inc MOSFET *SYM=POWMOSN .SUBCKT DI_DMN3010LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 3.27m RS 40 3 1.22m RG 20 2 9.37 CGS 2 3 1.68n EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.23n R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS NMOS(LEVEL=3 VMAX=62.5k THETA=80.0m + ETA=2.00m VTO=2.00 KP=41.4 .MODEL DCGD D (CJO=2.23n VJ=0.600 M=0.680 .MODEL DSUB D (IS=66.4n N=1.50 RS=28.1m BV=30.0 + CJO=485p VJ=0.800 M=0.420 TT=324n .MODEL DLIM D (IS=100U) .ENDS *---------- DMN3033LDM Spice Model ---------- .SUBCKT DMN3033LDM 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005805 RS 30 3 0.001 RG 20 2 1.32 CGS 2 3 6.922E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.0143 VTO = 2.028 + TOX = 6E-008 NSUB = 1E+017 KP = 21.95 KAPPA = 105 U0 = 200 .MODEL DCGD D CJO = 4.611E-010 VJ = 0.3568 M = 0.4267 .MODEL DSUB D IS = 2.567E-010 N = 1.254 RS = 0.01257 BV = 35 CJO = 8.267E-011 VJ = 0.4558 M = 0.5515 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3033LDM Spice Model V2.0 Last Revised 2013/12/10 *SRC=DMN3033LSN;DI_DMN3033LSN;MOSFETs N;Enh;30.0V 6.00A 30.0mohms DIODES INC MOSFET .MODEL DI_DMN3033LSN NMOS( LEVEL=1 VTO=2.10 KP=3.12u GAMMA=2.60 + PHI=.75 LAMBDA=56.2u RD=4.20m RS=4.20m + IS=3.00p PB=0.800 MJ=0.460 CBD=92.7p + CBS=111p CGSO=1.30u CGDO=1.08u CGBO=5.17u ) * -- Assumes default L=100U W=100U -- *SRC=DMN3051LDM;DI_DMN3051LDM;MOSFETs N;Enh;30.0V 4.00A 38.0mohms *SYM=POWMOSN .SUBCKT DI_DMN3051LDM 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 17.0m RS 40 3 1.95m RG 20 2 47.0 CGS 2 3 343p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 370p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS NMOS(LEVEL=3 VMAX=62.5k THETA=80.0m + ETA=2.00m VTO=2.20 KP=16.9 .MODEL DCGD D (CJO=370p VJ=0.600 M=0.680 .MODEL DSUB D (IS=16.6n N=1.50 RS=0.102 BV=30.0 + CJO=132p VJ=0.800 M=0.420 TT=214n .MODEL DLIM D (IS=100U) .ENDS *SRC=DMN3115UDM;DI_DMN3115UDM;MOSFETs N;Enh;30.0V 3.20A 60.0mohms Diodes Inc MOSFET .MODEL DI_DMN3115UDM NMOS( LEVEL=1 VTO=1.00 KP=10.7 GAMMA=1.24 + PHI=.75 LAMBDA=50.9u RD=8.40m RS=8.40m + IS=1.60p PB=0.800 MJ=0.460 CBD=76.2p + CBS=91.4p CGSO=648n CGDO=540n CGBO=3.57u ) * -- Assumes default L=100U W=100U -- *SRC=DMN3150L;DI_DMN3150L;MOSFETs N;Enh;28.0V 3.10A 85.0mohms DIODES INC MOSFET .MODEL DI_DMN3150L NMOS( LEVEL=1 VTO=1.40 KP=2.90u GAMMA=1.74 + PHI=.75 LAMBDA=145u RD=11.9m RS=11.9m + IS=1.55p PB=0.800 MJ=0.460 CBD=64.7p + CBS=77.6p CGSO=576n CGDO=480n CGBO=1.99u ) * -- Assumes default L=100U W=100U -- *SRC=DMN3200U;DI_DMN3200U;MOSFETs N;Enh;30.0V 2.20A 90.0mohms Diodes Inc MOSFET .MODEL DI_DMN3200U NMOS( LEVEL=1 VTO=1.00 KP=11.4 GAMMA=1.24 + PHI=.75 LAMBDA=139u RD=12.6m RS=12.6m + IS=1.10p PB=0.800 MJ=0.460 CBD=103p + CBS=123p CGSO=420n CGDO=350n CGBO=2.13u ) * -- Assumes default L=100U W=100U -- *SRC=DMN32D2LDF;DI_DMN32D2LDF;MOSFETs N;Enh;30.0V 0.400A 1.20ohms Diodes Inc MOSFET .MODEL DI_DMN32D2LDF NMOS( LEVEL=1 VTO=1.20 KP=0.100 GAMMA=1.49 + PHI=.75 LAMBDA=555u RD=0.168 RS=0.168 + IS=200f PB=0.800 MJ=0.460 CBD=13.1p + CBS=15.7p CGSO=43.2n CGDO=36.0n CGBO=311n ) * -- Assumes default L=100U W=100U -- *---------- DMN32D2LFB4 Spice Model ---------- .SUBCKT DMN32D2LFB4 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.5483 RS 30 3 0.001 RG 20 2 74.82 CGS 2 3 3.5E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2E-014 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.9734 + TOX = 6E-008 NSUB = 1E+016 KP = 3.524 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.449E-011 VJ = 0.7996 M = 0.6 .MODEL DSUB D IS = 7.105E-010 N = 1.311 RS = 0.8388 BV = 30 CJO = 1E-015 VJ = 0.6 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN32D2LFB4 Spice Model v1.0 Last Revised 2015/10/20 *SRC=DMN32D2LV;???;MOSFETs N;Enh;30.0V 0.400A 1.20ohms Diodes, Inc. .MODEL ??? NMOS( LEVEL=1 VTO=-1.20 KP=0.100 GAMMA=1.49 + PHI=.75 LAMBDA=556u RD=0.168 RS=0.168 + IS=200f PB=0.800 MJ=0.460 CBD=13.1p + CBS=15.7p CGSO=43.2n CGDO=36.0n CGBO=1.37u ) * -- Assumes default L=100U W=100U -- * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=02NOV2010 *VERSION=2 * .SUBCKT DMN3300U 10 20 30 * TERMINALS: D G S M1 10 20 30 30 DMOS L=100U W=100U .MODEL DMOS NMOS( LEVEL=1 VTO=1.00 KP=10.4 GAMMA=1.24 + PHI=.75 LAMBDA=127u RD=21.0m RS=21.0m + IS=1.00p PB=0.800 MJ=0.460 CBD=39.7p + CBS=47.7p CGSO=276n CGDO=230n CGBO=1.42u ) .ENDS * *$ *SRC=DMN4800LSS;DI_DMN4800LSS;MOSFETs N;Enh;30.0V 10.0A 14.0mohms Diodes Inc MOSFET *SYM=POWMOSN .SUBCKT DI_DMN4800LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 5.65m RS 40 3 1.35m RG 20 2 15.0 CGS 2 3 775p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 162p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS NMOS(LEVEL=3 VMAX=62.5k THETA=80.0m + ETA=1.40m VTO=1.60 KP=13.8 .MODEL DCGD D (CJO=162p VJ=0.600 M=0.680 .MODEL DSUB D (IS=41.5n N=1.50 RS=19.0m BV=30.0 + CJO=313p VJ=0.800 M=0.420 TT=253n .MODEL DLIM D (IS=100U) .ENDS *SRC=DMN4468LSS;DI_DMN4468LSS;MOSFETs N;Enh;30.0V 8.70A 14.0mohms Diodes Inc MOSFET *SYM=POWMOSN .SUBCKT DI_DMN4468LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 5.65m RS 40 3 1.35m RG 20 2 20.0 CGS 2 3 852p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 108p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS NMOS(LEVEL=3 VMAX=62.5k THETA=80.0m + ETA=1.61m VTO=1.95 KP=10.7 .MODEL DCGD D (CJO=108p VJ=0.600 M=0.680 .MODEL DSUB D (IS=36.1n N=1.50 RS=21.8m BV=30.0 + CJO=208p VJ=0.800 M=0.420 TT=253n .MODEL DLIM D (IS=100U) .ENDS *DIODES_INC_SPICE_MODEL DMN3404L *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=22Jan2013 *VERSION=1.1 .SUBCKT DMN3404L 10 20 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 10E-3 RS 23 3 Rmod1 12E-3 RG 20 22 1.8 RIN 20 23 2E11 RDS 10 23 2E9 CGS 2 3 320E-12 EGD 12 0 2 1 1 REGD 12 0 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 500E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 .003 RL 30 23 3 LS 30 23 2E-9 .MODEL Nmod1 NMOS (LEVEL=3 VTO=2 TOX=6.4E-8 NSUB=5E+16 KP=33 NFS=1E11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 162E-12 VJ = 0.45 M = 0.33) .MODEL DSUB D (IS=2.5E-13 N=1 RS=0.018 BV=33 CJO=50E-12 VJ=0.45 M=0.33 TT=3E-9) .MODEL DLIM D (IS=100U N=1) .MODEL Rmod1 RES (TC1=.5e-3 TC2=3E-6) .ENDS * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=210JUL2010 *VERSION=1 *------connections-------P1=G1, P2=S1, P3=G2, P4=S2, P5=P6=D2, P7=P8=D1 * .SUBCKT DMN3024LSD P1 P2 P3 P4 P5 P6 P7 P8 *Device1 M11 106 103 108 108 Nmod R12 P2 102 2 R11 104 106 Rmod1 0.015 R13 108 105 Rmod1 0.005 R15 104 105 100E6 R16 102 105 100E6 D11 105 104 Dmod1 I11 108 121 1 V11 122 121 1 R17 122 108 Rmod2 1 E11 102 103 121 108 1 E12 113 108 102 108 1 E13 114 108 104 108 1 C11 102 108 549E-12 C12 102 104 129E-12 C13 115 114 390E-12 C14 116 108 400E-12 S11 102 115 114 113 SMOD1 S12 113 115 114 113 SMOD2 S13 116 113 113 108 SMOD3 S14 116 102 113 108 SMOD4 L11 P7 104 1E-9 L12 P1 105 1E-9 R18 P7 P8 0.001 *Device2 M21 206 203 208 208 Nmod R22 P4 202 2 R21 204 206 Rmod1 0.015 R23 208 205 Rmod1 0.005 R25 204 205 100E6 R26 202 205 100E6 D21 205 204 Dmod1 I21 208 221 1 V21 222 221 1 R27 222 208 Rmod2 1 E21 202 203 221 208 1 E22 213 208 202 208 1 E23 214 208 204 208 1 C21 202 208 549E-12 C22 202 204 129E-12 C23 215 214 390E-12 C24 216 208 400E-12 S21 202 215 214 213 SMOD1 S22 213 215 214 213 SMOD2 S23 216 213 213 208 SMOD3 S24 216 202 213 208 SMOD4 L21 P5 204 1E-9 L22 P3 205 1E-9 R28 P5 P6 0.001 * .MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=-0.5 VOFF=0.5 .MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=0.5 VOFF=-0.5 .MODEL SMOD3 VSWITCH RON=.001 ROFF=100 VON=-2 VOFF=-3 .MODEL SMOD4 VSWITCH RON=.001 ROFF=100 VON=-3 VOFF=-2 .MODEL Nmod NMOS (LEVEL=3 VTO=2.5 KP=35 NFS=1.33E12 KAPPA=500 TOX=30E-9 NSUB=1E16 IS=1E-15 N=10) .MODEL Dmod1 D (IS=8.7E-14 RS=0.019 CJO=400E-12 VJ=0.6 M=0.55 TT=1e-9 TRS1=1e-4 BV=33) .MODEL Rmod1 RES (TC1=4.3e-3 TC2=0.6E-5) .MODEL Rmod2 RES (TC1=-4.5e-3 TC2=-6E-6) .ENDS DMN3024LSD * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=21JUL2010 *VERSION=1 *------connections-------D-G-S * .SUBCKT DMN3024LSS 3 4 5 M1 6 20 8 8 Nmod RG 4 2 2 RD 3 6 Rmod1 0.015 RS 8 5 Rmod1 0.005 RL 3 5 100E6 D1 5 3 Dmod1 I1 8 21 1 V1 22 21 1 RT 22 8 Rmod2 1 Et 2 20 21 8 1 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 C1 2 8 549E-12 C2 2 3 129E-12 C3 15 14 390E-12 C4 16 8 400E-12 S1 2 15 14 13 SMOD1 S2 13 15 14 13 SMOD2 S3 16 13 13 8 SMOD3 S4 16 2 13 8 SMOD4 .MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=-0.5 VOFF=0.5 .MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=0.5 VOFF=-0.5 .MODEL SMOD3 VSWITCH RON=.001 ROFF=100 VON=-2 VOFF=-3 .MODEL SMOD4 VSWITCH RON=.001 ROFF=100 VON=-3 VOFF=-2 .MODEL Nmod NMOS (LEVEL=3 VTO=2.5 KP=35 NFS=1.33E12 KAPPA=500 TOX=30E-9 NSUB=1E16 IS=1E-15 N=10) .MODEL Dmod1 D (IS=8.7E-14 RS=0.019 CJO=400E-12 VJ=0.6 M=0.55 TT=1e-9 TRS1=1e-4 BV=33) .MODEL Rmod1 RES (TC1=4.3e-3 TC2=0.6E-5) .MODEL Rmod2 RES (TC1=-4.5e-3 TC2=-6E-6) .ENDS DMN3024LSS * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=21JUL2010 *VERSION=1 *------connections-------D-G-S * .SUBCKT DMN3024LK3 3 4 5 M1 6 20 8 8 Nmod RG 4 2 2 RD 3 6 Rmod1 0.015 RS 8 5 Rmod1 0.005 RL 3 5 100E6 D1 5 3 Dmod1 I1 8 21 1 V1 22 21 1 RT 22 8 Rmod2 1 Et 2 20 21 8 1 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 C1 2 8 549E-12 C2 2 3 129E-12 C3 15 14 390E-12 C4 16 8 400E-12 S1 2 15 14 13 SMOD1 S2 13 15 14 13 SMOD2 S3 16 13 13 8 SMOD3 S4 16 2 13 8 SMOD4 .MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=-0.5 VOFF=0.5 .MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=0.5 VOFF=-0.5 .MODEL SMOD3 VSWITCH RON=.001 ROFF=100 VON=-2 VOFF=-3 .MODEL SMOD4 VSWITCH RON=.001 ROFF=100 VON=-3 VOFF=-2 .MODEL Nmod NMOS (LEVEL=3 VTO=2.5 KP=35 NFS=1.33E12 KAPPA=500 TOX=30E-9 NSUB=1E16 IS=1E-15 N=10) .MODEL Dmod1 D (IS=8.7E-14 RS=0.019 CJO=400E-12 VJ=0.6 M=0.55 TT=1e-9 TRS1=1e-4 BV=33) .MODEL Rmod1 RES (TC1=4.3e-3 TC2=0.6E-5) .MODEL Rmod2 RES (TC1=-4.5e-3 TC2=-6E-6) .ENDS DMN3024LK3 * *$ *SYM=POWMOSN .SUBCKT DMG4800LSD D=10 G=20 S=30 * TERMINALS: D G S M1 1 20 3 3 NMOS L=0.6U W=2.304672 RD 10 1 2m RS 30 3 4m CGS 20 3 692p EGD 12 0 20 1 1 VFB 14 0 0 FFB 20 1 VFB 1 CGD 13 14 488p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL=3 U0=400 VMAX=40k + ETA=0.1m VTO=1.62 TOX=60n NSUB=2.16e16 .MODEL DCGD D CJO=488p VJ=450m M=0.420 .MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=30 + CJO=48p VJ=0.950 M=0.920 .MODEL DLIM D IS=100U .ENDS *---------- DMG4468LK3 Spice Model ---------- .SUBCKT DMG4468LK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.009266 RS 30 3 0.001002 RG 20 2 1.37 CGS 2 3 7.889E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.0001 VTO = 2.046 + TOX = 6.045E-008 NSUB = 1E+017 KP = 28.97 KAPPA = 71.64 U0 = 400 .MODEL DCGD D CJO = 4.839E-010 VJ = 0.213 M = 0.3746 .MODEL DSUB D IS = 3.11E-010 N = 1.297 RS = 0.00732 BV = 35 CJO = 6.786E-011 VJ = 0.4257 M = 0.5551 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG4468LK3 Spice Model v1.0 Last Revised 2010/10/6 *---------- DMG4800LK3 Spice Model ---------- .SUBCKT DMG4800LK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00609 RS 30 3 0.001002 RG 20 2 1.37 CGS 2 3 6.734E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001 VTO = 1.515 + TOX = 6.045E-008 NSUB = 3.203E+015 KP = 26.14 KAPPA = 26.53 U0 = 400 .MODEL DCGD D CJO = 5.334E-010 VJ = 0.3477 M = 0.4238 .MODEL DSUB D IS = 2.647E-009 N = 1.306 RS = 0.01224 BV = 35 CJO = 5.333E-011 VJ = 0.6305 M = 0.8 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG4800LK3 Spice Model v1.0 Last Revised 2010/10/6 *---------- DMG4468LFG Spice Model ---------- .SUBCKT DMG4468LFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.009103 RS 30 3 0.001002 RG 20 2 1.37 CGS 2 3 7.889E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.003725 VTO = 2.01 + TOX = 6E-008 NSUB = 1E+017 KP = 50.8 KAPPA = 110.3 U0 = 400 .MODEL DCGD D CJO = 4.839E-010 VJ = 0.213 M = 0.3746 .MODEL DSUB D IS = 2.251E-010 N = 1.221 RS = 0.005011 BV = 35 CJO = 7.248E-011 VJ = 0.3928 M = 0.5931 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG4468LFG Spice Model v1.0 Last Revised 2010/10/19 *---------- DMG4800LFG Spice Model ---------- .SUBCKT DMG4800LFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00633 RS 30 3 0.001002 RG 20 2 1.37 CGS 2 3 6.734E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001 VTO = 1.616 + TOX = 6.045E-008 NSUB = 9.967E+015 KP = 31.63 KAPPA = 28.61 U0 = 400 .MODEL DCGD D CJO = 5.334E-010 VJ = 0.3477 M = 0.4238 .MODEL DSUB D IS = 2.647E-009 N = 1.349 RS = 0.006635 BV = 35 CJO = 5.245E-011 VJ = 0.6712 M = 0.8243 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG4800LFG Spice Model v1.0 Last Revised 2010/10/6 *---------- DMG4496SSS Spice Model ---------- .SUBCKT DMG4496SSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01007 RS 30 3 0.001 RG 20 2 2.86 CGS 2 3 4.495E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.55E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01276 VTO = 2.136 + TOX = 6E-008 NSUB = 4.86E+016 KP = 25.62 KAPPA = 7.551 U0=400 .MODEL DCGD D CJO = 1.88E-010 VJ = 0.1151 M = 0.2705 .MODEL DSUB D IS = 1E-009 N = 1.345 RS = 0.004398 BV = 35 CJO = 2.225E-010 VJ = 0.6 M = 0.4775 .MODEL DLIM D IS = 1E-005 .ENDS *Diodes DMG4496SSS Spice Model v1.0 Last Revised 2010/6/24 *---------- DMG4466SSS Spice Model ---------- .SUBCKT DMG4466SSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01149 RS 30 3 0.001002 RG 20 2 1.13 CGS 2 3 4.216E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.55E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8.276E+005 ETA = 0.02587 VTO = 2.098 + TOX = 6.045E-008 NSUB = 1.406E+017 KP = 34.37 KAPPA = 1E-015 U0 = 4.441E-010 .MODEL DCGD D CJO = 2.453E-010 VJ = 0.1563 M = 0.3026 .MODEL DSUB D IS = 1.188E-009 N = 1.345 RS = 0.004578 + BV = 35 CJO = 1.739E-010 VJ = 0.4139 M = 0.4368 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG4466SSS Spice Model v1.1 Last Revised 2011/1/8 *---------- DMG4466SSSL Spice Model ---------- .SUBCKT DMG4466SSSL 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01149 RS 30 3 0.001002 RG 20 2 1.13 CGS 2 3 4.216E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.55E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8.276E+005 ETA = 0.02587 VTO = 2.098 + TOX = 6.045E-008 NSUB = 1.406E+017 KP = 34.37 KAPPA = 1E-015 U0 = 4.441E-010 .MODEL DCGD D CJO = 2.453E-010 VJ = 0.1563 M = 0.3026 .MODEL DSUB D IS = 1.188E-009 N = 1.345 RS = 0.004578 + BV = 35 CJO = 1.739E-010 VJ = 0.4139 M = 0.4368 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG4466SSSL Spice Model v1.1 Last Revised 2011/1/18 *---------- DMN3730UFB4 Spice Model ---------- .SUBCKT DMN3730UFB4 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.254 RS 30 3 0.001 RG 20 2 64.1 CGS 2 3 6.303E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.3E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8482 + TOX = 6E-008 NSUB = 1E+016 KP = 6.297 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.864E-011 VJ = 0.6391 M = 0.6 .MODEL DSUB D IS = 1.379E-008 N = 1.49 RS = 0.3453 BV = 34 CJO = 7E-012 VJ = 0.6 M = 0.7813 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3730UFB4 Spice Model v1.0M Last Revised 2016/5/17 * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=24JAN2011 *VERSION=1 *PIN_ORDER *1=S1 *2=G1 *3=S2 *4=G2 *5=D2 *6=D2 *7=D1 *8=D1 * .SUBCKT ZXMN3AMC 1 2 3 4 5 6 7 8 *Dev1 N-channel M11 11 12 13 13 Nmod1 L=1.16E-6 W=0.28 M12 13 12 13 11 Pmod1 L=1.3E-6 W=0.13 RG11 2 12 5 RIN11 12 13 1E12 RD11 11 15 Rdmod1 0.08 RS11 13 14 1E-6 RL11 13 15 3E9 C11 12 13 8.5E-12 C12 12 15 3E-12 D11 13 15 Dmod1 RP11 15 7 1E-6 RP12 15 8 1E-6 LS11 14 1 11.2E-9 *Dev2 N-channel M21 21 22 23 23 Nmod1 L=1.16E-6 W=0.28 M22 23 22 23 21 Pmod1 L=1.3E-6 W=0.13 RG21 4 22 5 RIN21 22 23 1E12 RD21 21 25 Rdmod1 0.08 RS21 23 24 1E-6 RL21 23 25 3E9 C21 22 23 8.5E-12 C22 22 25 3E-12 D21 23 25 Dmod1 RP21 25 5 1E-6 RP22 25 6 1E-6 LS21 24 3 11.2E-9 .MODEL Nmod1 NMOS (LEVEL=3 TOX=5.5E-8 NSUB=5E17 VTO=2.3 +KP=15E-5 RS=.045 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod1 PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1.5E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dmod1 D (IS=6E-13 RS=.025 IKF=0.1 TRS1=1.5e-3 +CJO=85e-12 BV=33) .MODEL Rdmod1 RES (TC1=4.2e-3 TC2=1E-5) .ENDS * *$ *DIODES_INC_SPICE_MODEL DMN3730U N-channel MOSFET *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=1DEC2011 *VERSION=1 .SUBCKT DMN3730 10 20 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 400E-3 RS 23 3 Rmod1 10E-3 RG 20 22 70 RIN 20 23 2E11 RDS 10 23 6E9 CGS 2 3 120E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 90E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 0.0015 LS 30 23 1n .MODEL Nmod1 NMOS (LEVEL=3 VTO=.87 TOX=5.8E-8 NSUB=1E+17 KP=11.5 NFS=.5E+10 IS=1E-15 N=10) .MODEL DCGD D (CJO =30E-12 VJ = 0.5 M = 0.43) .MODEL DSUB D (IS = 1E-13 N=1.19 RS=0.06 BV=35 CJO=330E-12 VJ=0.42 M=0.5 TT=11E-9 TRS1=2E-3) .MODEL DLIM D (IS=100U N=1) .MODEL Rmod1 RES (TC1=6e-3 TC2=12E-6) .ENDS .SIMULATOR DEFAULT *---------- DMG4822SSD Spice Model ---------- .SUBCKT DMG4822SSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01149 RS 30 3 0.001002 RG 20 2 1.13 CGS 2 3 4.216E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.55E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8.276E+005 ETA = 0.02587 VTO = 2.098 + TOX = 6.045E-008 NSUB = 1.406E+017 KP = 34.37 KAPPA = 1E-015 U0 = 4.441E-010 .MODEL DCGD D CJO = 2.453E-010 VJ = 0.1563 M = 0.3026 .MODEL DSUB D IS = 1.188E-009 N = 1.345 RS = 0.004578 + BV = 35 CJO = 1.739E-010 VJ = 0.4139 M = 0.4368 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG4822SSD Spice Model v1.0 Last Revised 2011/6/27 *---------- DMN3029LFG Spice Model ---------- .SUBCKT DMN3029LFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.006868 RS 30 3 0.001 RG 20 2 1.92 CGS 2 3 5.089E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0.001 VTO = 2.23 + TOX = 6E-008 NSUB = 1E+016 KP = 33.14 U0 = 400 KAPPA = 0.001011 .MODEL DCGD D CJO = 2.68E-010 VJ = 0.204 M = 0.3131 .MODEL DSUB D IS = 1.168E-010 N = 1.244 RS = 0.00323 BV = 35 CJO = 1.898E-010 VJ = 0.2902 M = 0.4412 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3029LFG Spice Model v1.0 Last Revised 2011/8/16 *---------- DMN3110S Spice Model ---------- .SUBCKT DMN3110S 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01593 RS 30 3 0.001 RG 20 2 1.4 CGS 2 3 2.711E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.227 + TOX = 6E-008 NSUB = 1E+016 KP = 9.816 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.317E-010 VJ = 0.2783 M = 0.4405 .MODEL DSUB D IS = 1E-015 N = 0.8731 RS = 0.04482 BV = 35 CJO = 1.086E-011 VJ = 0.4101 M = 0.9 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3110S Spice Model v1.0 Last Revised 2011/8/15 *---------- DMG7410SFG Spice Model ---------- .SUBCKT DMG7410SFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.006868 RS 30 3 0.001 RG 20 2 1.92 CGS 2 3 5.089E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0.001 VTO = 2.23 + TOX = 6E-008 NSUB = 1E+016 KP = 33.14 U0 = 400 KAPPA = 0.001011 .MODEL DCGD D CJO = 2.68E-010 VJ = 0.204 M = 0.3131 .MODEL DSUB D IS = 1.168E-010 N = 1.244 RS = 0.00323 BV = 35 CJO = 1.898E-010 VJ = 0.2902 M = 0.4412 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG7410SFG Spice Model v1.0 Last Revised 2011/8/16 *---------- DMG7430LFG Spice Model ---------- .SUBCKT DMG7430LFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007058 RS 30 3 0.001 RG 20 2 2.94 CGS 2 3 1.348E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.222 + TOX = 6E-008 NSUB = 1E+016 KP = 121.1 U0 = 400 KAPPA = 1E-015 .MODEL DCGD D CJO = 3.779E-010 VJ = 0.6 M = 0.4637 .MODEL DSUB D IS = 2.322E-010 N = 1.242 RS = 0.002024 + BV = 45 CJO = 1.63E-010 VJ = 0.7 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG7430LFG Spice Model v1.0 Last Revised 2014/3/14 *---------- DMN3018SSS Spice Model ---------- .SUBCKT DMN3018SSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01061 RS 30 3 0.001 RG 20 2 1.47 CGS 2 3 1.924E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-013 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.267 + TOX = 6E-008 NSUB = 1E+016 KP = 33.03 U0 = 400 KAPPA = 1E-015 .MODEL DCGD D CJO = 7.297E-010 VJ = 0.6 M = 0.5206 .MODEL DSUB D IS = 1.439E-013 N = 0.9284 RS = 0.01772 + BV = 20 CJO = 4.24E-010 VJ = 0.65 M = 0.8 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3018SSS Spice Model v1.0 Last Revised 2014/7/24 *---------- DMN63D8LV Spice Model ---------- .SUBCKT DMN63D8LV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.906 RS 30 3 0.001 RG 20 2 62 CGS 2 3 2.111E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.592 + TOX = 6E-008 NSUB = 1E+016 KP = 0.5626 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.249E-011 VJ = 0.7186 M = 0.6 .MODEL DSUB D IS = 1.685E-012 N = 1.251 RS = 0.2452 BV = 65 CJO = 6.828E-012 VJ = 0.6 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN63D8LV Spice Model v1.0 Last Revised 2014/10/15 *---------- DMN3900UFA Spice Model ---------- .SUBCKT DMN3900UFA 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.3262 RS 30 3 0.001 RG 20 2 467 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 4.031E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001583 VTO = 0.9767 + TOX = 6E-008 NSUB = 1E+016 KP = 3.291 U0 = 400 KAPPA = 8.238 .MODEL DCGD D CJO = 2.804E-011 VJ = 0.04193 M = 0.3358 .MODEL DSUB D IS = 4.551E-009 N = 1.836 RS = 0.1357 + CJO = 3.048E-012 VJ = 0.1 M = 0.1882 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS = 7.551E-009 N = 22.09 BV = 2.453 .ENDS *Diodes DMN3900UFA Spice Model v2.0 Last Revised 2014/2/18 *---------- DMN3025LFG Spice Model ---------- .SUBCKT DMN3025LFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01437 RS 30 3 0.001 RG 20 2 1.84 CGS 2 3 4.55E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.1E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 2.222 + TOX = 6E-008 NSUB = 1E+017 KP = 35.61 KAPPA = 1E-015 U0 = 400 .MODEL DCGD D CJO = 2.222E-010 VJ = 0.2975 M = 0.3378 .MODEL DSUB D IS = 2.278E-010 N = 1.242 RS = 0.007361 + BV = 35 CJO = 4.795E-011 VJ = 0.3436 M = 0.5232 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3025LFG Spice Model v1.0 Last Revised 2013/4/17 *---------- DMN63D8LDW Spice Model ---------- .SUBCKT DMN63D8LDW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.906 RS 30 3 0.001 RG 20 2 62 CGS 2 3 2.111E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.592 + TOX = 6E-008 NSUB = 1E+016 KP = 0.5626 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.249E-011 VJ = 0.7186 M = 0.6 .MODEL DSUB D IS = 1.685E-012 N = 1.251 RS = 0.2452 BV = 65 CJO = 6.828E-012 VJ = 0.6 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN63D8LDW Spice Model v1.0 Last Revised 2014/10/15 *---------- DMN3010LFG Spice Model ---------- .SUBCKT DMN3010LFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0045 RS 30 3 0.001 RG 20 2 2.36 CGS 2 3 1.952E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.4E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.358 + TOX = 6E-008 NSUB = 1E+016 KP = 129.3 U0 = 400 KAPPA = 4.441E-014 .MODEL DCGD D CJO = 7.076E-010 VJ = 0.6 M = 0.4965 .MODEL DSUB D IS = 2.322E-010 N = 1.242 RS = 0.002024 + BV = 35 CJO = 2.865E-010 VJ = 2.446 M = 1.359 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3010LFG Spice Model v1.0 Last Revised 2014/3/14 * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=21/03/2014 *VERSION=1 .SUBCKT DMN3190LDW 10 20 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 50E-3 RS 23 3 Rmod1 100E-3 RG 20 22 50 RIN 20 23 2E11 RDS 10 23 6E9 CGS 2 3 90E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 84E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 0.0015 LS 30 23 1n .MODEL Nmod1 NMOS (LEVEL=3 VTO=2.5 TOX=7.3E-8 NSUB=6E+16 KP=7.5 NFS=2.8E+12 IS=.5E-15 N=10) .MODEL DCGD D (CJO =26E-12 VJ = 0.5 M = 0.43) .MODEL DSUB D (IS = 1E-13 N=1.0 RS=0.07 BV=35 CJO=100E-12 VJ=0.42 M=0.5 TT=11E-9 TRS1=2E-3) .MODEL DLIM D (IS=100U N=1) .MODEL Rmod1 RES (TC1=.1e-3 TC2=12E-6) .ENDS * (c) 2014 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * .SIMULATOR DEFAULT * (c) 2014 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *---------- DMN3008SFG Spice Model ---------- .SUBCKT DMN3008SFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001509 RS 30 3 0.001 RG 20 2 0.02 CGS 2 3 3.299E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.5E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.645 + TOX = 6E-008 NSUB = 1E+016 KP = 135.4 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.825E-009 VJ = 0.7987 M = 0.6 .MODEL DSUB D IS = 2.672E-010 N = 1.105 RS = 0.003471 BV = 35 CJO = 6.274E-010 VJ = 0.8 M = 0.6 TT=1E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3008SFG Spice Model v1.0M Last Revised 2016/5/3 *---------- DMT3008LFDF Spice Model ---------- .SUBCKT DMT3008LFDF 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001978 RS 30 3 0.001 RG 20 2 1.62 CGS 2 3 9.083E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.922 + TOX = 6E-008 NSUB = 1E+016 KP = 41.04 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.931E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 4.761E-010 N = 1.236 RS = 0.002671 BV = 35 CJO = 8.829E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT3008LFDF Spice Model v1.0M Last Revised 2016/6/14 *---------- DMN3027LFG Spice Model ---------- .SUBCKT DMN3027LFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.006868 RS 30 3 0.001 RG 20 2 1.92 CGS 2 3 5.089E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0.001 VTO = 2.23 + TOX = 6E-008 NSUB = 1E+016 KP = 33.14 U0 = 400 KAPPA = 0.001011 .MODEL DCGD D CJO = 2.68E-010 VJ = 0.204 M = 0.3131 .MODEL DSUB D IS = 1.168E-010 N = 1.244 RS = 0.00323 BV = 35 CJO = 1.898E-010 VJ = 0.2902 M = 0.4412 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3027LFG Spice Model v1.0 Last Revised 2015/6/22 *---------- DMN63D8L Spice Model ---------- .SUBCKT DMN63D8L 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.906 RS 30 3 0.001 RG 20 2 62 CGS 2 3 2.111E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.592 + TOX = 6E-008 NSUB = 1E+016 KP = 0.5626 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.249E-011 VJ = 0.7186 M = 0.6 .MODEL DSUB D IS = 1.685E-012 N = 1.251 RS = 0.2452 BV = 65 CJO = 6.828E-012 VJ = 0.6 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN63D8L Spice Model v1.0 Last Revised 2015/7/3 *---------- DMN63D8LW Spice Model ---------- .SUBCKT DMN63D8LW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.906 RS 30 3 0.001 RG 20 2 62 CGS 2 3 2.111E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.592 + TOX = 6E-008 NSUB = 1E+016 KP = 0.5626 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.249E-011 VJ = 0.7186 M = 0.6 .MODEL DSUB D IS = 1.685E-012 N = 1.251 RS = 0.2452 BV = 65 CJO = 6.828E-012 VJ = 0.6 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN63D8LW Spice Model v1.0 Last Revised 2015/7/3 *---------- DMT3009LDT Spice Model ---------- .SUBCKT DMT3009LDT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.002503 RS 30 3 0.001 RG 20 2 1.04 CGS 2 3 7.039E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.879 + TOX = 6E-008 NSUB = 1E+016 KP = 40.58 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.446E-010 VJ = 0.8 M = 0.7188 .MODEL DSUB D IS = 2.773E-010 N = 1.21 RS = 0.005245 BV = 30 CJO = 1.695E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT3009LDT Spice Model v1.0 Last Revised 2015/9/7 *Q1 *---------- DMN3025LDT Spice Model ---------- .SUBCKT DMN3025LDT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004998 RS 30 3 0.001 RG 20 2 1.84 CGS 2 3 4.764E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.946 + TOX = 6E-008 NSUB = 1E+016 KP = 16.89 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.977E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.313E-010 N = 1.242 RS = 0.008911 BV = 30 CJO = 2.221E-010 VJ = 0.6002 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Q2 *---------- DMT3009LDT Spice Model ---------- .SUBCKT DMT3009LDT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.002503 RS 30 3 0.001 RG 20 2 1.04 CGS 2 3 7.039E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.879 + TOX = 6E-008 NSUB = 1E+016 KP = 40.58 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.446E-010 VJ = 0.8 M = 0.7188 .MODEL DSUB D IS = 2.773E-010 N = 1.21 RS = 0.005245 BV = 30 CJO = 1.695E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3025LDT Spice Model v1.0 Last Revised 2015/9/9 *---------- DMN3032LFDB Spice Model ---------- .SUBCKT DMN3032LFDB 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004399 RS 30 3 0.001 RG 20 2 2.29 CGS 2 3 4.23E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.525 + TOX = 6E-008 NSUB = 1E+016 KP = 17.07 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.11E-010 VJ = 0.335 M = 0.5084 .MODEL DSUB D IS = 2.451E-010 N = 1.289 RS = 0.02026 BV = 30 CJO = 1E-015 VJ = 0.1 M = 0.2257 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3032LFDB Spice Model v1.0 Last Revised 2015/9/23 *---------- DMN3015LSD Spice Model ---------- .SUBCKT DMN3015LSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007363 RS 30 3 0.001 RG 20 2 2.94 CGS 2 3 1.344E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.9E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.213 + TOX = 6E-008 NSUB = 1E+016 KP = 176.5 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 4.27E-010 VJ = 0.7983 M = 0.6 .MODEL DSUB D IS = 8.592E-011 N = 1.184 RS = 0.003043 BV = 50 CJO = 3.379E-010 VJ = 0.6 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3015LSD Spice Model v1.0 Last Revised 2015/6/16 *---------- DMN3032LFDBQ Spice Model ---------- .SUBCKT DMN3032LFDBQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004399 RS 30 3 0.001 RG 20 2 2.29 CGS 2 3 4.23E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.525 + TOX = 6E-008 NSUB = 1E+016 KP = 17.07 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.11E-010 VJ = 0.335 M = 0.5084 .MODEL DSUB D IS = 2.451E-010 N = 1.289 RS = 0.02026 BV = 30 CJO = 1E-015 VJ = 0.1 M = 0.2257 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3032LFDBQ Spice Model v1.0 Last Revised 2015/9/23 *---------- DMN3018SSD Spice Model ---------- .SUBCKT DMN3018SSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01061 RS 30 3 0.001 RG 20 2 1.47 CGS 2 3 1.924E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-013 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.267 + TOX = 6E-008 NSUB = 1E+016 KP = 33.03 U0 = 400 KAPPA = 1E-015 .MODEL DCGD D CJO = 7.297E-010 VJ = 0.6 M = 0.5206 .MODEL DSUB D IS = 1.439E-013 N = 0.9284 RS = 0.01772 + BV = 20 CJO = 4.24E-010 VJ = 0.65 M = 0.8 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3018SSD Spice Model v1.0 Last Revised 2015/1/30 *---------- DMTH3004LPS Spice Model ---------- .SUBCKT DMTH3004LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001 RS 30 3 0.001 RG 20 2 1 CGS 2 3 2.049E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.8E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.164 + TOX = 6E-008 NSUB = 1E+016 KP = 135.6 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 9.486E-010 VJ = 2.289 M = 0.7048 .MODEL DSUB D IS = 2.321E-010 N = 1.181 RS = 0.0003474 BV = 30 CJO = 1.937E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH3004LPS Spice Model v1.0 Last Revised 2015/11/10 *---------- DMTH3004LPS Spice Model ---------- .SUBCKT DMTH3004LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001 RS 30 3 0.001 RG 20 2 1 CGS 2 3 2.049E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.8E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.164 + TOX = 6E-008 NSUB = 1E+016 KP = 135.6 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 9.486E-010 VJ = 2.289 M = 0.7048 .MODEL DSUB D IS = 2.321E-010 N = 1.181 RS = 0.0003474 BV = 30 CJO = 1.937E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH3004LPS Spice Model v1.0 Last Revised 2015/11/10 *ZETEX ZXMN3A01E6 Spice Model v2.0 Last Revised 22/2/05 * .SUBCKT ZXMN3A01E6 30 40 50 *------connections-------D-G-S M1 6 2 5 5 Nmod L=1.16E-6 W=0.28 M2 5 2 5 6 Pmod L=1.3E-6 W=0.13 RG 4 2 5 RIN 2 5 1E12 RD 3 6 Rdmod 0.08 RL 3 5 3E9 C1 2 5 8.5E-12 C2 3 4 3E-12 D1 5 3 Dbodymod LD 3 30 0.3E-9 LG 4 40 1.9E-9 LS 5 50 1.9E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=5E17 VTO=2.3 +KP=15E-5 RS=.045 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1.5E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=6E-13 RS=.025 IKF=0.1 TRS1=1.5e-3 +CJO=85e-12 BV=33) .MODEL Rdmod RES (TC1=4.2e-3 TC2=1E-5) .ENDS ZXMN3A01E6 * *$ * *ZETEX ZXMN3B14F Spice Model v1.0 Last revision 6/1/06 * .SUBCKT ZXMN3B14F 30 40 50 *------connections-------D-G-S M1 6 2 5 5 Nmod L=0.7E-6 W=1.3 M2 5 2 5 6 Pmod L=1.3E-6 W=0.34 RG 4 2 2.8 RIN 2 5 1E12 RD 3 6 Rdmod 0.03 RL 3 5 3E9 C1 2 5 8.5E-12 C2 3 4 3E-12 D1 5 3 Dbodymod LD 3 30 0.5E-9 LG 4 40 1.0E-9 LS 5 50 1.0E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=3.7E-8 NSUB=5E16 VTO=1.24 +KP=1.5E-5 RS=.01 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=3.7E-8 NSUB=2.58E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=1E-11 RS=.025 IKF=.5 TRS1=3e-3 TT=1.2E-8 +CJO=200e-12 BV=33) .MODEL Rdmod RES (TC1=4.9e-3 TC2=1E-5) .ENDS ZXMN3B14F * *$ * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=210JUL2010 *VERSION=1 *------connections-------P1=G1, P2=S1, P3=G2, P4=S2, P5=P6=D2, P7=P8=D1 * .SUBCKT ZXMN3F31DN8 P1 P2 P3 P4 P5 P6 P7 P8 *Device1 M11 106 103 108 108 Nmod R12 P2 102 2 R11 104 106 Rmod1 0.015 R13 108 105 Rmod1 0.005 R15 104 105 100E6 R16 102 105 100E6 D11 105 104 Dmod1 I11 108 121 1 V11 122 121 1 R17 122 108 Rmod2 1 E11 102 103 121 108 1 E12 113 108 102 108 1 E13 114 108 104 108 1 C11 102 108 549E-12 C12 102 104 129E-12 C13 115 114 390E-12 C14 116 108 400E-12 S11 102 115 114 113 SMOD1 S12 113 115 114 113 SMOD2 S13 116 113 113 108 SMOD3 S14 116 102 113 108 SMOD4 L11 P7 104 1E-9 L12 P1 105 1E-9 R18 P7 P8 0.001 *Device2 M21 206 203 208 208 Nmod R22 P4 202 2 R21 204 206 Rmod1 0.015 R23 208 205 Rmod1 0.005 R25 204 205 100E6 R26 202 205 100E6 D21 205 204 Dmod1 I21 208 221 1 V21 222 221 1 R27 222 208 Rmod2 1 E21 202 203 221 208 1 E22 213 208 202 208 1 E23 214 208 204 208 1 C21 202 208 549E-12 C22 202 204 129E-12 C23 215 214 390E-12 C24 216 208 400E-12 S21 202 215 214 213 SMOD1 S22 213 215 214 213 SMOD2 S23 216 213 213 208 SMOD3 S24 216 202 213 208 SMOD4 L21 P5 204 1E-9 L22 P3 205 1E-9 R28 P5 P6 0.001 * .MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=-0.5 VOFF=0.5 .MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=0.5 VOFF=-0.5 .MODEL SMOD3 VSWITCH RON=.001 ROFF=100 VON=-2 VOFF=-3 .MODEL SMOD4 VSWITCH RON=.001 ROFF=100 VON=-3 VOFF=-2 .MODEL Nmod NMOS (LEVEL=3 VTO=2.5 KP=35 NFS=1.33E12 KAPPA=500 TOX=30E-9 NSUB=1E16 IS=1E-15 N=10) .MODEL Dmod1 D (IS=8.7E-14 RS=0.019 CJO=400E-12 VJ=0.6 M=0.55 TT=1e-9 TRS1=1e-4 BV=33) .MODEL Rmod1 RES (TC1=4.3e-3 TC2=0.6E-5) .MODEL Rmod2 RES (TC1=-4.5e-3 TC2=-6E-6) .ENDS ZXMN3F31DN8 * *$ *---------- DMN3023L Spice Model ---------- .SUBCKT DMN3023L 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01447 RS 30 3 0.001 RG 20 2 12 CGS 2 3 8.446E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.83 + TOX = 6E-008 NSUB = 1E+016 KP = 48.02 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.856E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.256E-010 N = 1.23 RS = 0.01103 BV = 30 CJO = 2.22E-010 VJ = 0.1 M = 0.2257 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3023L Spice Model v1.0 Last Revised 2015/7/21 *---------- DMNH3010LK3 Spice Model ---------- .SUBCKT DMNH3010LK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004289 RS 30 3 0.001 RG 20 2 2.36 CGS 2 3 1.96E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.5E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.613 + TOX = 6E-008 NSUB = 1E+016 KP = 98.69 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 7.191E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.341E-010 N = 1.193 RS = 0.002974 BV = 30 CJO = 3.471E-010 VJ = 0.8 M = 0.6 TT = 1.37E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH3010LK3 Spice Model v1.0 Last Revised 2015/01/07 *---------- DMT3006LDK Spice Model ---------- .SUBCKT DMT3006LDK 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001846 RS 30 3 0.001 RG 20 2 1.04 CGS 2 3 1.248E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.961 + TOX = 6E-008 NSUB = 1E+016 KP = 69.31 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.861E-010 VJ = 0.8 M = 0.6541 .MODEL DSUB D IS = 2.305E-010 N = 1.192 RS = 0.003032 BV = 30 CJO = 1.695E-009 VJ = 0.8 M = 0.6 TT=7E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT3006LDK Spice Model v1.0M Last Revised 2016/3/2 *---------- DMN4800LSSQ Spice Model ---------- .SUBCKT DMN4800LSSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00609 RS 30 3 0.001002 RG 20 2 1.37 CGS 2 3 6.734E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001 VTO = 1.515 + TOX = 6.045E-008 NSUB = 3.203E+015 KP = 26.14 KAPPA = 26.53 U0 = 400 .MODEL DCGD D CJO = 5.334E-010 VJ = 0.3477 M = 0.4238 .MODEL DSUB D IS = 2.647E-009 N = 1.306 RS = 0.01224 BV = 35 CJO = 5.333E-011 VJ = 0.6305 M = 0.8 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN4800LSSQ Spice Model v1.0M Last Revised 2016/3/2 *---------- DMN3018SFGQ Spice Model ---------- .SUBCKT DMN3018SFGQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.009782 RS 30 3 0.001 RG 20 2 1.16 CGS 2 3 7.066E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.066E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.353 + TOX = 6E-008 NSUB = 1E+016 KP = 52.61 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 4.065E-010 VJ = 1 M = 0.9231 .MODEL DSUB D IS = 2.251E-010 N = 1.3 RS = 0.004445 BV = 33.26 CJO = 2.225E-010 VJ = 0.1072 M = 0.284 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3018SFGQ Spice Model v1.0M Last Revised 2016/2/25 *---------- DMTH3004LK3 Spice Model ---------- .SUBCKT DMTH3004LK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001 RS 30 3 0.001 RG 20 2 1 CGS 2 3 2.049E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.8E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.164 + TOX = 6E-008 NSUB = 1E+016 KP = 135.6 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 9.486E-010 VJ = 2.289 M = 0.7048 .MODEL DSUB D IS = 2.321E-010 N = 1.181 RS = 0.0003474 BV = 30 CJO = 1.937E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH3004LK3 Spice Model v1.0 Last Revised 2015/11/10 *---------- DMT3020LFDB Spice Model ---------- .SUBCKT DMT3020LFDB 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.006049 RS 30 3 0.001 RG 20 2 1.08 CGS 2 3 3.632E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.641 TOX = 6E-008 NSUB = 1E+016 KP = 18.96 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.731E-010 VJ = 0.8 M = 0.6441 .MODEL DSUB D IS = 1.009E-009 N = 1.296 RS = 0.01293 BV = 30 CJO = 5.543E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT3020LFDB Spice Model v1.0 Last Revised 2015/11/11 *---------- DMT3006LFG Spice Model ---------- .SUBCKT DMT3006LFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001846 RS 30 3 0.001 RG 20 2 1.04 CGS 2 3 1.248E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.961 + TOX = 6E-008 NSUB = 1E+016 KP = 69.31 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.861E-010 VJ = 0.8 M = 0.6541 .MODEL DSUB D IS = 2.305E-010 N = 1.192 RS = 0.003032 BV = 30 CJO = 1.695E-009 VJ = 0.8 M = 0.6 TT=7E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT3006LFG Spice Model v1.0M Last Revised 2016/5/3 *---------- DMT3020LFDF Spice Model ---------- .SUBCKT DMT3020LFDF 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.006049 RS 30 3 0.001 RG 20 2 1.08 CGS 2 3 3.632E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.641 TOX = 6E-008 NSUB = 1E+016 KP = 18.96 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.731E-010 VJ = 0.8 M = 0.6441 .MODEL DSUB D IS = 1.009E-009 N = 1.296 RS = 0.01293 BV = 30 CJO = 5.543E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT3020LFDF Spice Model v1.0M Last Revised 2016/5/6 *---------- DMT3006LFDF Spice Model ---------- .SUBCKT DMT3006LFDF 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001846 RS 30 3 0.001 RG 20 2 1.04 CGS 2 3 1.248E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.961 + TOX = 6E-008 NSUB = 1E+016 KP = 69.31 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.861E-010 VJ = 0.8 M = 0.6541 .MODEL DSUB D IS = 2.305E-010 N = 1.192 RS = 0.003032 BV = 30 CJO = 1.695E-009 VJ = 0.8 M = 0.6 TT=7E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT3006LFDF Spice Model v1.0M Last Revised 2016/5/3 *---------- DMT3006LPS Spice Model ---------- .SUBCKT DMT3006LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001846 RS 30 3 0.001 RG 20 2 1.04 CGS 2 3 1.248E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.961 + TOX = 6E-008 NSUB = 1E+016 KP = 69.31 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.861E-010 VJ = 0.8 M = 0.6541 .MODEL DSUB D IS = 2.305E-010 N = 1.192 RS = 0.003032 BV = 30 CJO = 1.695E-009 VJ = 0.8 M = 0.6 TT=7E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT3006LPS Spice Model v1.0M Last Revised 2016/5/3 *SRC=DMN100;DI_DMN100;MOSFETs N;Enh;30.0V 1.10A 0.150ohms Diodes Inc. MOSFET .MODEL DI_DMN100 NMOS( LEVEL=1 VTO=2.00 KP=11.5 GAMMA=2.48 + PHI=.75 LAMBDA=306u RD=21.0m RS=21.0m + IS=550f PB=0.800 MJ=0.460 CBD=199p + CBS=238p CGSO=360n CGDO=300n CGBO=840n ) * -- Assumes default L=100U W=100U -- *---------- DMN3008SFGQ Spice Model ---------- .SUBCKT DMN3008SFGQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001509 RS 30 3 0.001 RG 20 2 0.02 CGS 2 3 3.299E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.5E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.645 + TOX = 6E-008 NSUB = 1E+016 KP = 135.4 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.825E-009 VJ = 0.7987 M = 0.6 .MODEL DSUB D IS = 2.672E-010 N = 1.105 RS = 0.003471 BV = 35 CJO = 6.274E-010 VJ = 0.8 M = 0.6 TT=1E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3008SFGQ Spice Model v1.0M Last Revised 2016/5/3 *---------- DMN3030LSS Spice Model ---------- .SUBCKT DMN3030LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005805 RS 30 3 0.001 RG 20 2 1.32 CGS 2 3 6.922E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.0143 VTO = 2.028 + TOX = 6E-008 NSUB = 1E+017 KP = 21.95 KAPPA = 105 U0 = 200 .MODEL DCGD D CJO = 4.611E-010 VJ = 0.3568 M = 0.4267 .MODEL DSUB D IS = 2.567E-010 N = 1.254 RS = 0.01257 BV = 35 CJO = 8.267E-011 VJ = 0.4558 M = 0.5515 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3030LSS Spice Model v1.0 Last Revised 2011/5/30 *SRC=DMN3033LSD;DI_DMN3033LSD;MOSFETs N;Enh;30.0V 6.90A 22.0mohms Diodes Inc MOSFET *SYM=POWMOSN .SUBCKT DI_DMN3033LSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 9.45m RS 40 3 1.55m RG 20 2 21.7 CGS 2 3 633p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 843p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS NMOS(LEVEL=3 VMAX=62.5k THETA=60.0m + ETA=2.00m VTO=3.00 KP=13.5 .MODEL DCGD D (CJO=843p VJ=0.600 M=0.680 .MODEL DSUB D (IS=28.6n N=1.50 RS=65.2m BV=30.0 + CJO=200p VJ=0.800 M=0.420 TT=252n .MODEL DLIM D (IS=100U) .ENDS *SRC=DMN3051L;DI_DMN3051L;MOSFETs N;Enh;30.0V 5.80A 38.0mohms Diodes Inc MOSFET *SYM=POWMOSN .SUBCKT DI_DMN3051L 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 17.0m RS 40 3 1.95m RG 20 2 47.0 CGS 2 3 343p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 370p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS NMOS(LEVEL=3 VMAX=62.5k THETA=80.0m + ETA=2.00m VTO=2.20 KP=15.6 .MODEL DCGD D (CJO=370p VJ=0.600 M=0.680 .MODEL DSUB D (IS=24.1n N=1.50 RS=70.7m BV=30.0 + CJO=132p VJ=0.800 M=0.420 TT=239n .MODEL DLIM D (IS=100U) .ENDS *---------- DMT3004LFG Spice Model ---------- .SUBCKT DMT3004LFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001 RS 30 3 0.001 RG 20 2 1 CGS 2 3 2.049E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.8E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.164 + TOX = 6E-008 NSUB = 1E+016 KP = 135.6 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 9.486E-010 VJ = 2.289 M = 0.7048 .MODEL DSUB D IS = 2.321E-010 N = 1.181 RS = 0.0003474 BV = 30 CJO = 1.937E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT3004LFG Spice Model v1.0M Last Revised 2016/6/29 *---------- DMN3020UFDF Spice Model ---------- .SUBCKT DMN3020UFDF 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01197 RS 30 3 0.001 RG 20 2 1.27 CGS 2 3 1.239E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.85E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.9495 + TOX = 6E-008 NSUB = 1E+016 KP = 109.4 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 5.31E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 1.004E-008 N = 1.226 RS = 0.01837 BV = 35.5 CJO = 2.226E-010 VJ = 0.7186 M = 0.6022 TT = 3.5E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3020UFDF Spice Model v1.0M Last Revised 2016/7/19 *---------- DMT3002LPS Spice Model ---------- .SUBCKT DMT3002LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0001 RS 30 3 0.001 RG 20 2 1.04 CGS 2 3 4.937E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.99 + TOX = 6E-008 NSUB = 1E+016 KP = 268.9 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.2E-009 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.244E-010 N = 1.155 RS = 0.0008535 BV = 30 CJO = 5E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT3002LPS Spice Model v1.0M Last Revised 2016/2/4 *---------- DMN3055LFDB Spice Model ---------- .SUBCKT DMN3055LFDB 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01938 RS 30 3 0.001 RG 20 2 2.05 CGS 2 3 4.156E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.394 + TOX = 6E-008 NSUB = 1E+016 KP = 32.82 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.123E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 2.225E-010 N = 1.229 RS = 0.02329 BV = 35 CJO = 2.22E-010 VJ = 0.6 M = 0.6211 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3055LFDB Spice Model v1.0M Last Revised 2016/5/9 *---------- DMTH3003LFG Spice Model ---------- .SUBCKT DMTH3003LFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001 RS 30 3 0.001 RG 20 2 1 CGS 2 3 2.049E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.8E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.164 + TOX = 6E-008 NSUB = 1E+016 KP = 135.6 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 9.486E-010 VJ = 2.289 M = 0.7048 .MODEL DSUB D IS = 2.321E-010 N = 1.181 RS = 0.0003474 BV = 30 CJO = 1.937E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH3003LFG Spice Model v1.0M Last Revised 2016/6/29 *---------- DMTH3002LPS Spice Model ---------- .SUBCKT DMTH3002LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0001 RS 30 3 0.001 RG 20 2 1.04 CGS 2 3 4.937E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.99 + TOX = 6E-008 NSUB = 1E+016 KP = 268.9 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.2E-009 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.244E-010 N = 1.155 RS = 0.0008535 BV = 30 CJO = 5E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH3002LPS Spice Model v1.0M Last Revised 2016/2/4 *---------- DMN3016LFDF Spice Model ---------- .SUBCKT DMN3016LFDF 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007363 RS 30 3 0.001 RG 20 2 2.94 CGS 2 3 1.344E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.9E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.213 + TOX = 6E-008 NSUB = 1E+016 KP = 176.5 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 4.27E-010 VJ = 0.7983 M = 0.6 .MODEL DSUB D IS = 8.592E-011 N = 1.184 RS = 0.003043 BV = 50 CJO = 3.379E-010 VJ = 0.6 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3016LFDF Spice Model v1.0 Last Revised 2015/6/16 *---------- DMN3025LFDF Spice Model ---------- .SUBCKT DMN3025LFDF 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0121 RS 30 3 0.001 RG 20 2 2.45 CGS 2 3 5.929E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.45E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 1.863 + TOX = 6E-008 NSUB = 1E+016 KP = 52 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 3.069E-010 VJ = 0.7 M = 0.65 .MODEL DSUB D IS = 1.511E-011 N = 1.099 RS = 0.01954 BV = 45 CJO = 2.221E-010 VJ = 0.6319 M = 0.7672 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3025LFDF Spice Model v1.0 Last Revised 2015/1/30 *---------- DMN3042LFDF Spice Model ---------- .SUBCKT DMN3042LFDF 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01631 RS 30 3 0.001 RG 20 2 3.19 CGS 2 3 5.244E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.053 + TOX = 6E-008 NSUB = 1E+016 KP = 44.07 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.121E-010 VJ = 0.7018 M = 0.6 .MODEL DSUB D IS = 1.011E-009 N = 1.157 RS = 0.0244 BV = 36 CJO = 2.1E-010 VJ = 0.7682 M = 0.6 TT=3.9E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3042LFDF Spice Model v1.0M Last Revised 2016/8/29 *---------- DMT3020LFCL Spice Model ---------- .SUBCKT DMT3020LFCL 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.006049 RS 30 3 0.001 RG 20 2 1.08 CGS 2 3 3.632E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.641 TOX = 6E-008 NSUB = 1E+016 KP = 18.96 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.731E-010 VJ = 0.8 M = 0.6441 .MODEL DSUB D IS = 1.009E-009 N = 1.296 RS = 0.01293 BV = 37.6 CJO = 5.543E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT3020LFCL Spice Model v1.0M Last Revised 2016/7/14 *---------- DMT31M6LPS Spice Model ---------- .SUBCKT DMT31M6LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1E-009 RS 30 3 0.001 RG 20 2 0.94 CGS 2 3 7.102E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.8E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.071 + TOX = 6E-008 NSUB = 1E+016 KP = 381.1 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3E-009 VJ = 0.8 M = 0.7165 .MODEL DSUB D IS = 2.338E-010 N = 1.114 RS = 0.00242 BV = 34 CJO = 5E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT31M6LPS Spice Model v1.0M Last Revised 2016/8/31 *---------- ZXMN3A14FTA Spice Model ---------- .SUBCKT ZXMN3A14FQTA 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02679 RS 30 3 0.001 RG 20 2 1.23 CGS 2 3 3.56E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.548 + TOX = 6E-008 NSUB = 1E+016 KP = 9.886 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.613E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.518E-009 N = 1.343 RS = 0.04565 BV = 35 CJO = 2.328E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes ZXMN3A14FQTA Spice Model v1.0M Last Revised 2016/9/13 *---------- DMN3016LDV Spice Model ---------- .SUBCKT DMN3016LDV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007058 RS 30 3 0.001 RG 20 2 2.94 CGS 2 3 1.348E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.222 + TOX = 6E-008 NSUB = 1E+016 KP = 121.1 U0 = 400 KAPPA = 1E-015 .MODEL DCGD D CJO = 3.779E-010 VJ = 0.6 M = 0.4637 .MODEL DSUB D IS = 2.322E-010 N = 1.242 RS = 0.002024 BV = 45 CJO = 1.63E-010 VJ = 0.7 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3016LDV Spice Model v1.0M Last Revised 2016/9/7 *---------- DMN3021LFDF Spice Model ---------- .SUBCKT DMN3021LFDF 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007356 RS 30 3 0.001 RG 20 2 2.75 CGS 2 3 6.551E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.4E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.915 + TOX = 6E-008 NSUB = 1E+016 KP = 48.83 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.203E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.259E-010 N = 1.266 RS = 0.00556 BV = 34 CJO = 2.269E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3021LFDF Spice Model v1.0M Last Revised 2016/8/29 *SRC=DMN3150LW;DI_DMN3150LW;MOSFETs N;Enh;28.0V 1.60A 88.0mohms Diodes Inc MOSFET *SYM=POWMOSN .SUBCKT DI_DMN3150LW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 40.8m RS 40 3 3.20m RG 20 2 93.7 CGS 2 3 257p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 219p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS NMOS(LEVEL=3 VMAX=58.3k THETA=80.0m + ETA=2.00m VTO=1.40 KP=21.8 .MODEL DCGD D (CJO=219p VJ=0.600 M=0.680 .MODEL DSUB D (IS=6.64n N=1.50 RS=0.256 BV=28.0 + CJO=85.0p VJ=0.800 M=0.420 TT=162n .MODEL DLIM D (IS=100U) .ENDS *SRC=DMN2009LSS;DI_DMN2009LSS;MOSFETs N;Enh;20.0V 12.0A 8.00mohms Diodes Inc. MOSFET *SYM=POWMOSN .SUBCKT DI_DMN2009LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 2.80m RS 40 3 1.20m RG 20 2 12.5 CGS 2 3 2.46n EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 663p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS NMOS(LEVEL=3 VMAX=41.7k THETA=60.0m + ETA=2.00m VTO=3.00 KP=274 .MODEL DCGD D (CJO=663p VJ=0.600 M=0.680 .MODEL DSUB D (IS=49.8n N=1.50 RS=37.5m BV=20.0 + CJO=1.28n VJ=0.800 M=0.420 TT=297n .MODEL DLIM D (IS=100U) .ENDS *SYM=POWMOSN .SUBCKT DMN2020LSN D=10 G=20 S=30 * TERMINALS: D G S M1 1 2 3 3 NMOS L=0.6U W=1943.229m RD 10 1 5m RS 30 3 4m RG 20 2 1.5 CGS 2 3 952p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 550p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL=3 U0=500 VMAX=80k + ETA=0.1m VTO=1.525 TOX=25n NSUB=5.3e16 .MODEL DCGD D CJO=550p VJ=0.350 M=0.410 .MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20 + CJO=116p VJ=0.120 M=0.380 .MODEL DLIM D IS=100U .ENDS *ZETEX ZXMN2A02N8 Spice Model v2.0 Last Revised 22/2/05 * .SUBCKT ZXMN2A02N8 30 40 50 *---connections---D-G-S M1 6 2 7 7 Nmod L=1.16E-6 W=2.3 M2 7 2 7 6 Pmod L=1.3E-6 W=1.3 RG 4 2 1 RIN 2 5 1E12 RD 3 6 Rdmod 0.0045 RS 7 5 Rdmod 0.01 RL 3 5 3E9 C1 2 5 10E-12 C2 3 2 5E-12 D1 5 3 Dbodymod LD 3 30 1.3E-9 LG 4 40 1.2E-9 LS 5 50 1.2E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=4.5E-8 NSUB=10E16 +VTO=1.365 KP=3.6E-5 NFS=2E11 KAPPA=0.1 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=4.5E-8 NSUB=1.5E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=2E-11 RS=.015 XTI=1.5 TRS1=1.5e-3 TT=7e-9 +CJO=450e-12 BV=22) .MODEL Rdmod RES (TC1=3e-3 TC2=6E-6) .ENDS * *$ * *---------- DMG8601UFG Spice Model ---------- .SUBCKT DMG8601UFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01441 RS 30 3 0.001 RG 20 2 202.6 CGS 2 3 1.466E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 30 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1.361E+005 ETA = 0.001 VTO = 0.8913 + TOX = 6E-008 NSUB = 1E+016 KP = 97.33 KAPPA = 1 U0 = 400 .MODEL DCGD D CJO = 2.802E-010 VJ = 0.2313 M = 0.4878 .MODEL DSUB D IS = 2.098E-009 N = 1.133 RS = 0.02894 BV = 25 CJO = 2.541E-010 VJ = 0.1292 M = 0.32 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG8601UFG Spice Model v1.0 Last Revised 2011/5/5 *---------- DMG6968UTS Spice Model ---------- .SUBCKT DMG6968UTS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01441 RS 30 3 0.001 RG 20 2 202.6 CGS 2 3 1.466E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 30 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1.361E+005 ETA = 0.001 VTO = 0.8913 + TOX = 6E-008 NSUB = 1E+016 KP = 97.33 KAPPA = 1 U0 = 400 .MODEL DCGD D CJO = 2.802E-010 VJ = 0.2313 M = 0.4878 .MODEL DSUB D IS = 2.098E-009 N = 1.133 RS = 0.02894 BV = 25 CJO = 2.541E-010 VJ = 0.1292 M = 0.32 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG6968UTS Spice Model v1.0 Last Revised 2011/5/5 *SRC=DMG6968UDM;DI_DMG6968UDM;MOSFETs N;Enh;20.0V 6.50A 25.0mohms Diodes Inc MOSFET *SYM=POWMOSN .SUBCKT DI_DMG6968UDM 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 10.9m RS 40 3 1.62m RG 20 2 40.7 CGS 2 3 114p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 204p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS NMOS(LEVEL=3 VMAX=41.7k THETA=80.0m + ETA=2.00m VTO=0.900 KP=31.8 .MODEL DCGD D (CJO=204p VJ=0.600 M=0.680 .MODEL DSUB D (IS=27.0n N=1.50 RS=55.4m BV=20.0 + CJO=134p VJ=0.800 M=0.420 TT=247n .MODEL DLIM D (IS=100U) .ENDS *SYM=POWMOSN .SUBCKT DMG9926USD D=10 G=20 S=30 * TERMINALS: D G S M1 1 2 3 3 NMOS L=0.6U W=0.8625 RD 10 1 16m RS 30 3 4m RG 20 2 1.5 CGS 2 3 872p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 408p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB ********************************************* .MODEL NMOS NMOS LEVEL=3 U0=500 VMAX=80k + ETA=0.1m VTO=1.0 TOX=16.8n NSUB=5.36e16 ********************************************* .MODEL DCGD D CJO=448p VJ=0.450 M=0.550 ********************************************* .MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20 + CJO=28p VJ=0.800 M=0.420 ********************************************* .MODEL DLIM D IS=100U ********************************************* .ENDS *---------- DMG3414U Spice Model ---------- .SUBCKT DMG3414U 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01338 RS 30 3 1E-003 RG 20 2 18 CGS 2 3 7.702E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 5.027E-008 VTO = 0.8394 + TOX = 6E-008 NSUB = 1E+016 KP = 46.34 KAPPA = 1E-015 U0 = 400 .MODEL DCGD D CJO = 4.457E-010 VJ = 0.2472 M = 0.4558 .MODEL DSUB D IS = 4.271E-010 N = 1.076 RS = 0.05217 BV = 25 CJO = 3.405E-011 VJ = 0.2561 M = 0.4362 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG3414U Spice Model v1.0 Last Revised 2011/7/7 *SRC=DMG6968U;DI_DMG6968U;MOSFETs N;Enh;20.0V 6.50A 25.0mohms Diodes Inc MOSFET *SYM=POWMOSN .SUBCKT DI_DMG6968U 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 10.9m RS 40 3 1.62m RG 20 2 33.7 CGS 2 3 119p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 226p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS NMOS(LEVEL=3 VMAX=41.7k THETA=80.0m + ETA=2.00m VTO=0.900 KP=31.8 .MODEL DCGD D (CJO=226p VJ=0.600 M=0.680 .MODEL DSUB D (IS=27.0n N=1.50 RS=55.4m BV=20.0 + CJO=176p VJ=0.800 M=0.420 TT=247n .MODEL DLIM D (IS=100U) .ENDS *SYM=POWMOSN .SUBCKT DMN2075 D=10 G=20 S=30 * TERMINALS: D G S M1 1 2 3 3 NMOS L=0.6U W=0.8625 RD 10 1 16m RS 30 3 4m RG 20 2 1.24 CGS 2 3 872p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 408p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL=3 U0=500 VMAX=80k + ETA=0.1m VTO=1.0 TOX=16.8n NSUB=5.36e16 .MODEL DCGD D CJO=448p VJ=0.450 M=0.550 .MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=25.0 + CJO=28p VJ=0.800 M=0.420 .MODEL DLIM D IS=100U .ENDS *SYM=POWMOSN .SUBCKT DMG9926UDM D=10 G=20 S=30 * TERMINALS: D G S M1 1 2 3 3 NMOS L=0.6U W=0.8625 RD 10 1 16m RS 30 3 4m RG 20 2 1.5 CGS 2 3 872p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 408p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB ********************************************* .MODEL NMOS NMOS LEVEL=3 U0=500 VMAX=80k + ETA=0.1m VTO=1.0 TOX=16.8n NSUB=5.36e16 ********************************************* .MODEL DCGD D CJO=448p VJ=0.450 M=0.550 ********************************************* .MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20 + CJO=28p VJ=0.800 M=0.420 ********************************************* .MODEL DLIM D IS=100U ********************************************* .ENDS *---------- DMN2041LSD Spice Model ---------- .SUBCKT DMN2041LSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01312 RS 30 3 0.001002 RG 20 2 1.37 CGS 2 3 4.74E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001 VTO = 1.023 + TOX = 6E-008 NSUB = 1.901E+016 KP = 50 KAPPA = 30.04 U0 = 400 .MODEL DCGD D CJO = 4.457E-010 VJ = 0.2472 M = 0.4558 .MODEL DSUB D IS = 2.93E-009 N = 1.251 RS = 0.02983 BV = 25 CJO = 3.405E-011 VJ = 0.2561 M = 0.4362 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2041LSD Spice Model v1.0 Last Revised 2010/11/18 *SRC=DMN2050L;DI_DMN2050L;MOSFETs N;Enh;20.0V 5.90A 29.0mohms Diodes Inc MOSFET *SYM=POWMOSN .SUBCKT DI_DMN2050L 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 12.8m RS 40 3 1.72m RG 20 2 25.4 CGS 2 3 415p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 825p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS NMOS(LEVEL=3 VMAX=41.7k THETA=80.0m + ETA=1.83m VTO=1.40 KP=75.8 .MODEL DCGD D (CJO=825p VJ=0.600 M=0.680 .MODEL DSUB D (IS=24.5n N=1.50 RS=25.4m BV=20.0 + CJO=215p VJ=0.800 M=0.420 TT=234n .MODEL DLIM D (IS=100U) .ENDS *---------- DMN2075U Spice Model ---------- .SUBCKT DMN2075U 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.03596 RS 30 3 0.001 RG 20 2 1.5 CGS 2 3 5.381E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.9505 + TOX = 6E-008 NSUB = 1E+016 KP = 55.47 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.128E-010 VJ = 0.6 M = 0.6001 .MODEL DSUB D IS = 4.456E-010 N = 1.107 RS = 0.06698 BV = 22 CJO = 1E-015 VJ = 0.6 M = 0.7957 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2075U Spice Model v1.0M Last Revised 2016/4/7 * *Zetex ZXMN2B03E6 Spice Model v1.0 Last Revised 7/12/07 * .SUBCKT ZXMN2B03E6 30 40 50 *------connections-------D-G-S M1 6 2 5 5 Nmod L=1.16E-6 W=1.83 M2 5 2 5 6 Pmod L=1.2E-6 W=0.67 RG 4 22 1.5 RIN 2 5 1E12 RD 3 6 Rmod1 0.015 RL 3 5 3E9 C1 2 5 10E-12 C2 3 4 3E-12 D1 5 3 Dmod1 Rt 5 61 Rmod2 1 Vt 61 62 1 It 5 62 1 Et 2 22 62 5 1 LD 3 30 0.5E-9 LG 4 40 1.0E-9 LS 5 50 1.0E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=3.5E-8 NSUB=1E17 VTO=0.8 +KP=7E-5 RS=.020 NFS=1E11 KAPPA=0.06 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=3.5E-8 NSUB=4.1E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dmod1 D (IS=1E-11 RS=.05 IKF=.5 TT=0.6E-8 +CJO=200e-12 BV=23) .MODEL Rmod1 RES (TC1=8e-3 TC2=0.9E-5) .MODEL Rmod2 RES (TC1=-1.2e-3 TC2=-1E-6) .ENDS ZXMN2B03E6 * *$ * * (c) 2007 Zetex Semiconductors plc * * The copyright in these models and the designs embodied belong * to Zetex Semiconductors plc (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Zetex, its distributors * or agents. * * Zetex Semiconductors plc, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *ZETEX ZXM64N02X Spice Model v1.0 Last Revised 10/01/2005 * .SUBCKT ZXM64N02X 3 4 5 *----connections----D-G-S * M1 6 20 8 8 MOSMOD M2 6 20 8 8 MOSMODS RG 4 2 1.7 RIN 2 8 200E6 RD 3 6 RDSMOD 0.02 RS 8 5 RDSMOD 0.004 RL 3 5 35E6 C1 2 8 1000E-12 C2 2 3 130E-12 C3 15 14 1150E-12 C4 16 8 1100E-12 D1 5 3 DMOD1 S1 2 15 14 13 SMOD1a S2 13 15 14 13 SMOD1b S3 16 13 13 8 SMOD2a S4 16 2 13 8 SMOD2b Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 Egt1 20 2 5 21 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 RMOD2 1 .MODEL MOSMOD NMOS VTO=1.29 IS=1E-15 KP=35 LAMBDA=4.9E-3 .MODEL MOSMODS NMOS VTO=0.8 IS=1E-15 KP=0.35 .MODEL DMOD1 D IS=6E-13 RS=0.025 BV=22 CJO=750E-12 IBV=1E-6 TT=21e-9 .MODEL SMOD1a VSWITCH RON=1e-2 ROFF=1e4 VON=-1 VOFF=1.5 .MODEL SMOD1b VSWITCH RON=1e-2 ROFF=1e4 VON=1.5 VOFF=-1 .MODEL SMOD2a VSWITCH RON=1e2 ROFF=1e4 VON=-1.5 VOFF=-3.5 .MODEL SMOD2b VSWITCH RON=1e-2 ROFF=1e4 VON=-3.5 VOFF=-1.5 .MODEL RDSMOD RES (TC1=2.3E-3 TC2=0.8E-5) .MODEL RMOD2 RES (TC1=-1.9e-3 TC2=1e-6) .ENDS ZXM64N02X * *$ * *DIODES_INC_SPICE_MODEL ZXMN2F30FH N-channel MOSFET *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=27Oct2014 *VERSION=1 .SUBCKT ZXMN2F30FH 10 20 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 15E-3 RS 23 3 Rmod1 10E-3 RG 20 22 10 RIN 20 23 2E11 RDS 10 23 6E9 CGS 2 3 20E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 36E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 0.015 LS 30 23 1n .MODEL Nmod1 NMOS (LEVEL=3 VTO=1.95 KP=90 NFS=8E12 TOX=3.5E-8 NSUB=1E17 IS=1E-15 N=10) .MODEL DCGD D (CJO = 16E-12 VJ = 0.5 M = 0.43) .MODEL DSUB D (IS = .1E-10 N=1.1 RS=0.003 BV=22 CJO=10E-12 VJ=0.42 M=0.5 TT=11E-9 TRS1=3E-3) .MODEL DLIM D (IS=100U N=1) .MODEL Rmod1 RES (TC1=3e-6 TC2=6E-6) .ENDS .SIMULATOR DEFAULT .SIMULATOR DEFAULT * (c) 2014 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *---------- DMN2100UDM Spice Model ---------- .SUBCKT DMN2100UDM 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01441 RS 30 3 0.001 RG 20 2 202.6 CGS 2 3 1.466E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 30 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1.361E+005 ETA = 0.001 VTO = 0.8913 + TOX = 6E-008 NSUB = 1E+016 KP = 97.33 KAPPA = 1 U0 = 400 .MODEL DCGD D CJO = 2.802E-010 VJ = 0.2313 M = 0.4878 .MODEL DSUB D IS = 2.098E-009 N = 1.133 RS = 0.02894 BV = 25 CJO = 2.541E-010 VJ = 0.1292 M = 0.32 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2100UDM Spice Model v1.0 Last Revised 2013/6/28 *ZETEX ZXMN2B14FH Spice Model v1.0 Last Revised 30/11/07 * .SUBCKT ZXMN2B14FH 30 40 50 *------connections-------D-G-S M1 6 2 5 5 Nmod L=1E-6 W=1.1 M2 5 2 5 6 Pmod L=1E-6 W=0.55 RG 4 22 2.8 RIN 2 5 1E12 RD 3 6 Rmod1 0.03 RL 3 5 3E9 C1 2 5 300E-12 C2 3 4 3E-12 D1 5 3 Dmod1 Rt 5 61 Rmod2 1 Vt 61 62 1 It 5 62 1 Et 2 22 62 5 1 LD 3 30 0.5E-9 LG 4 40 1.0E-9 LS 5 50 1.0E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=3.5E-8 NSUB=1E17 VTO=0.84 +KP=3.7E-5 RS=.006 NFS=1E11 KAPPA=0.06 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=3.5E-8 NSUB=4.1E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dmod1 D (IS=1E-11 RS=.03 IKF=.5 TRS1=3e-3 TT=0.6E-8 +CJO=200e-12 BV=23) .MODEL Rmod1 RES (TC1=4.2e-3 TC2=0.8E-5) .MODEL Rmod2 RES (TC1=-0.9e-3 TC2=0E-5) .ENDS ZXMN2B14FH * *$ * *ZETEX ZXMN2A03E6 Spice Model v1.0 Last Revised 11/08/05 * .SUBCKT ZXMN2A03E6 30 40 50 *------connections-------D-G-S M1 6 20 5 5 Nmod M2 5 20 5 6 Pmod RG 4 2 1 RIN 2 5 1E12 RD 3 6 Rmod1 0.04 RL 3 5 3E9 C1 2 5 1.5E-10 C2 3 4 2.5E-10 D1 5 3 Dbodymod Egt1 2 20 21 5 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 Rmod2 1.45 LD 3 30 0.3E-9 LG 4 40 1.9E-9 LS 5 50 1.9E-9 .MODEL Nmod NMOS (LEVEL=3 L=0.7E-6 W=0.77 TOX=45E-9 NSUB=4.09E16 UO=929) +VTO=0.9 KP=34E-6 GAMMA=1.52 PHI=0.77 RS=0.02 KAPPA=0.01) .MODEL Pmod PMOS (LEVEL=3 L=0.6E-6 W=0.8 TOX=70E-9 NSUB=4.09E16 UO=373) .MODEL Dbodymod D (IS=2E-11 N=1 IKF=3 RS=0.05 TRS1=1E-5 TRS2=3E-5 XTI=0.1) .MODEL Rmod1 RES (TC1=0 TC2=0) .MODEL Rmod2 RES (TC1=3E-4 TC2=1E-7) .ENDS ZXMN2A03E6 * *$ * *ZETEX ZXMN2A14F Spice Model v1.0 Last Revised 22/2/05 * .SUBCKT ZXMN2A14F 30 40 50 *----connections-----D-G-S M1 6 20 5 5 Nmod L=1.16E-6 W=0.74 M2 5 20 5 6 Pmod L=1.3E-6 W=0.45 RG 4 2 3.5 RIN 2 5 1E12 RD 3 6 Rmod1 0.015 RL 3 5 3E12 C1 2 5 8.5E-12 C2 3 4 3.5E-12 D1 5 3 Dmod1 Egt1 20 2 21 5 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 Rmod2 1 LD 3 30 0.5E-9 LG 4 40 1.0E-9 LS 5 50 1.0E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=4.5E-8 NSUB=5E16 +VTO=1.25 KP=10E-5 RS=.027 NFS=1E9 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=3.3E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dmod1 D (IS=1E-10 RS=.054 IKF=0.04 TRS1=1.5e-3 +CJO=600e-12 BV=23) .MODEL Rmod1 RES (TC1=8.2e-3 TC2=2.3E-5) .MODEL Rmod2 RES (TC1=-3E-4 TC2=0E-6) .ENDS ZXMN2A14F * *$ * * *Zetex ZXMN2F34FH Spice Model v1.0 Last Revised 31/07/08 * .SUBCKT ZXMN2F34FH 3 4 5 *------connections-------D-G-S M1 6 20 8 8 Nmod RG 4 2 7 RD 3 6 Rmod1 0.025 RS 8 5 Rmod1 0.0033 RL 3 5 100E6 D1 5 3 Dmod1 I1 8 21 1 V1 22 21 1 RT 22 8 Rmod2 1 Et 2 20 21 8 1 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 C1 2 8 200E-12 C2 2 3 40E-12 C3 15 14 270E-12 C4 16 8 230E-12 S1 2 15 14 13 SMOD1 S2 13 15 14 13 SMOD2 S3 16 13 13 8 SMOD3 S4 16 2 13 8 SMOD4 .MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=0.5 VOFF=1.5 .MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=1.5 VOFF=0.5 .MODEL SMOD3 VSWITCH RON=.001 ROFF=100 VON=-2 VOFF=-3 .MODEL SMOD4 VSWITCH RON=.001 ROFF=100 VON=-3 VOFF=-2 .MODEL Nmod NMOS (LEVEL=3 VTO=1.574 KP=16 NFS=1.33E12 KAPPA=500 TOX=30E-9 NSUB=1E16 IS=1E-15 N=10) .MODEL Dmod1 D (IS=8.7E-14 RS=0.026 CJO=320E-12 VJ=0.55 M=0.45 TT=1e-9 TRS1=1e-4 BV=22) .MODEL Rmod1 RES (TC1=3.1e-3 TC2=0.6E-5) .MODEL Rmod2 RES (TC1=-1.9e-3 TC2=-6E-6) .ENDS ZXMN2F34FH * *$ * * (c) 2008 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA *---------- DMG3420U Spice Model ---------- .SUBCKT DMG3420U 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02158 RS 30 3 0.001 RG 20 2 1.53 CGS 2 3 3.785E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.25E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.009674 VTO = 1.32 + TOX = 6E-008 NSUB = 1E+016 KP = 53.82 KAPPA = 1E-015 U0 = 400 .MODEL DCGD D CJO = 3.069E-010 VJ = 0.1752 M = 0.4052 .MODEL DSUB D IS = 8.863E-010 N = 1.372 RS = 0.01813 BV = 22 CJO = 4.022E-011 VJ = 0.2305 M = 0.4418 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG3420U Spice Model v1.0 Last Revised 2010/5/9 *SRC=DMN2112SN;DI_DMN2112SN;MOSFETs N;Enh;20.0V 1.20A 0.100ohms DIODES INC MOSFET .MODEL DI_DMN2112SN NMOS( LEVEL=1 VTO=1.20 KP=35.3 GAMMA=1.49 + PHI=.75 LAMBDA=83.3u RD=14.0m RS=14.0m + IS=600f PB=0.800 MJ=0.460 CBD=248p + CBS=298p CGSO=540n CGDO=450n CGBO=1.21u ) * -- Assumes default L=100U W=100U -- *SRC=DMN2215UDM;DI_DMN2215UDM;MOSFETs N;Enh;20.0V 2.00A 0.100ohms Diodes Inc MOSFET *SYM=POWMOSN .SUBCKT DI_DMN2215UDM 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 46.5m RS 40 3 3.50m RG 20 2 75.0 CGS 2 3 158p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 211p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS NMOS(LEVEL=3 VMAX=41.7k THETA=80.0m + ETA=2.00m VTO=1.00 KP=25.9Meg .MODEL DCGD D (CJO=211p VJ=0.600 M=0.680 .MODEL DSUB D (IS=8.30n N=1.50 RS=0.175 BV=20.0 + CJO=65.6p VJ=0.800 M=0.420 TT=174n .MODEL DLIM D (IS=100U) .ENDS *SRC=DMN2114SN;DI_DMN2114SN;MOSFETs N;Enh;20.0V 1.20A 0.100ohms DIODES INC MOSFET .MODEL DI_DMN2114SN NMOS( LEVEL=1 VTO=1.40 KP=21.8 GAMMA=1.74 + PHI=.75 LAMBDA=83.3u RD=14.0m RS=14.0m + IS=600f PB=0.800 MJ=0.460 CBD=248p + CBS=298p CGSO=540n CGDO=450n CGBO=810n ) * -- Assumes default L=100U W=100U -- *SRC=DMN2230U;DI_DMN2230U;MOSFETs N;Enh;20.0V 2.00A 0.110ohms Diodes Inc MOSFET .MODEL DI_DMN2230U NMOS( LEVEL=1 VTO=1.00 KP=10.4 GAMMA=1.24 + PHI=.75 LAMBDA=127u RD=15.4m RS=15.4m + IS=1.00p PB=0.800 MJ=0.460 CBD=46.4p + CBS=55.6p CGSO=360n CGDO=300n CGBO=1.22u ) * -- Assumes default L=100U W=100U -- *ZETEX ZXMN2A01E6 Spice Model v2.0 Last Revised 22/2/05 * .SUBCKT ZXMN2A01E6 30 40 50 *------connections-------D-G-S M1 6 20 5 5 Nmod L=1.16E-6 W=0.46 M2 5 20 5 6 Pmod L=1.3E-6 W=0.22 RG 4 2 5 RIN 2 5 1E12 RD 3 6 Rmod1 0.036 RL 3 5 3E9 C1 2 5 8.5E-12 C2 3 4 3E-12 D1 5 3 Dbodymod Egt1 2 20 21 5 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 Rmod2 1 LD 3 30 0.3E-9 LG 4 40 1.9E-9 LS 5 50 1.9E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=4.5E-8 NSUB=3.5E16 VTO=1.31 +KP=4E-5 RS=.03 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=4.5E-8 NSUB=3.3E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=5E-12 RS=.025 IKF=0.1 TRS1=1.5e-3 +CJO=230e-12 BV=23) .MODEL Rmod1 RES (TC1=5.8e-3 TC2=1.3E-5) .MODEL Rmod2 RES (TC1=-3e-4 TC2=0) .ENDS * *$ * *ZETEX ZXMN2A01F Spice Model v2.0 Last Revised 22/2/05 * .SUBCKT ZXMN2A01F 30 40 50 *------connections-------D-G-S M1 6 20 5 5 Nmod L=1.16E-6 W=0.46 M2 5 20 5 6 Pmod L=1.3E-6 W=0.22 RG 4 2 5 RIN 2 5 1E12 RD 3 6 Rmod1 0.036 RL 3 5 3E9 C1 2 5 8.5E-12 C2 3 4 3E-12 D1 5 3 Dbodymod Egt1 2 20 21 5 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 Rmod2 1 LD 3 30 0.5E-9 LG 4 40 1.0E-9 LS 5 50 1.0E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=4.5E-8 NSUB=3.5E16 VTO=1.31 +KP=4E-5 RS=.03 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=4.5E-8 NSUB=3.3E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=5E-12 RS=.025 IKF=0.1 TRS1=1.5e-3 +CJO=230e-12 BV=23) .MODEL Rmod1 RES (TC1=5.8e-3 TC2=1.3E-5) .MODEL Rmod2 RES (TC1=-3e-4 TC2=0) .ENDS ZXMN2A01F * *$ * *ZETEX ZXMD63N02X Spice Model v1.0 Last Revised 3/7/00 * .SUBCKT ZXMD63N02X 3 4 5 * D G S M1 3 2 5 5 M63N02 RG 4 2 18 RL 3 5 1E9 C1 2 5 700E-12 C2 3 2 50E-12 D1 5 3 D63N02 * .MODEL M63N02 NMOS VTO=1.40 RS=0.04 RD=0.02 KP=15 +CBD=600E-12 LAMBDA=8.7E-3 .MODEL D63N02 D IS=4E-12 N=1.04 IKF=82E-3 RS=105E-3 .ENDS ZXMD63N02X * *$ * *ZETEX ZXM61N02F Spice Model v1.0 Last Revised 24/2/04 * .SUBCKT ZXM61N02F 3 4 5 *----connections----D-G-S * M1 6 20 8 8 MOSMOD M2 6 20 8 8 MOSMODS RG 4 2 6 RIN 2 8 200E6 RD 3 6 RMOD1 0.03 RS 8 5 RMOD1 0.0225 RL 3 5 35E6 C1 2 8 158E-12 C3 15 14 175E-12 C4 16 8 183E-12 D1 5 3 DMOD1 D2 17 3 DMOD2 S1 2 15 14 13 SMOD1a S2 13 15 14 13 SMOD1b S3 16 13 13 8 SMOD2a S4 16 2 13 8 SMOD2b Egs1 2 17 2 8 1 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 Egt1 2 20 21 8 -1 Vgt1 8 22 1 Igt1 8 21 1 Rgt 21 22 RMOD2 1 .MODEL MOSMOD NMOS VTO=1.35 IS=1E-15 KP=5.5 CBD=90E-12 LAMBDA=4.9E-3 .MODEL MOSMODS NMOS VTO=0.95 IS=1E-15 KP=0.055 .MODEL DMOD1 D IS=1E-13 RS=0.15 BV=24 IBV=1E-6 TT=9e-9 .MODEL DMOD2 D CJO=190e-12 IS=1e-30 N=10 .MODEL SMOD1a VSWITCH RON=1e-2 ROFF=1e4 VON=-1.75 VOFF=2.75 .MODEL SMOD1b VSWITCH RON=1e-2 ROFF=1e4 VON=2.75 VOFF=-1.75 .MODEL SMOD2a VSWITCH RON=1e2 ROFF=1e4 VON=-1.5 VOFF=-3.5 .MODEL SMOD2b VSWITCH RON=1e-2 ROFF=1e4 VON=-3.5 VOFF=-1.5 .MODEL RMOD1 RES (TC1=2.5E-3 TC2=1.8E-5) .MODEL RMOD2 RES (TC1=3.3E-3 TC2=1.5E-6) .ENDS ZXM61N02F * *$ * *SYM=POWMOSN .SUBCKT DMG1012T D=10 G=20 S=30 * TERMINALS: D G S M1 1 20 3 3 NMOS L=0.6U W=47.66m RD 10 1 220m RS 30 3 80m CGS 20 3 57p EGD 12 0 20 1 1 VFB 14 0 0 FFB 20 1 VFB 1 CGD 13 14 27p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL=3 U0=500 VMAX=80k + ETA=0.1m VTO=0.99 TOX=16.8n NSUB=4.57e16 .MODEL DCGD D CJO=27p VJ=80m M=0.320 .MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20 + CJO=14p VJ=0.800 M=0.420 .MODEL DLIM D IS=100U .ENDS *SYM=POWMOSN .SUBCKT DMG1012T D=10 G=20 S=30 * TERMINALS: D G S M1 1 20 3 3 NMOS L=0.6U W=47.66m RD 10 1 220m RS 30 3 80m CGS 20 3 57p EGD 12 0 20 1 1 VFB 14 0 0 FFB 20 1 VFB 1 CGD 13 14 27p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL=3 U0=500 VMAX=80k + ETA=0.1m VTO=0.99 TOX=16.8n NSUB=4.57e16 .MODEL DCGD D CJO=27p VJ=80m M=0.320 .MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20 + CJO=14p VJ=0.800 M=0.420 .MODEL DLIM D IS=100U .ENDS *---------- DMN2004K Spice Model ---------- .SUBCKT DMN2004K 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2004K Spice Model v1.0 Last Revised 2011/10/27 *---------- DMN2004TK Spice Model ---------- .SUBCKT DMN2004TK 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2004TK Spice Model v1.0 Last Revised 2011/10/27 *---------- DMN2004VK Spice Model ---------- .SUBCKT DMN2004VK 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2004VK Spice Model v1.0 Last Revised 2011/10/27 *---------- DMN2005K Spice Model ---------- .SUBCKT DMN2005K 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2005K Spice Model v1.0 Last Revised 2011/11/15 *---------- DMN2005DLP4K Spice Model ---------- .SUBCKT DMN2005DLP4K 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2005DLP4K Spice Model v1.0 Last Revised 2011/11/15 *---------- DMN2005LP4K Spice Model ---------- .SUBCKT DMN2005LP4K 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DDMN2005LP4K Spice Model v1.0 Last Revised 2011/11/15 *---------- DMN2005LPK Spice Model ---------- .SUBCKT DMN2005LPK 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2005LPK Spice Model v1.0 Last Revised 2011/11/15 *---------- DMN2016UTS Spice Model ---------- .SUBCKT DMN2016UTS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01185 RS 30 3 0.001 RG 20 2 1.42 CGS 2 3 1.392E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.85E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01011 VTO = 1.042 + TOX = 6E-008 NSUB = 1E+016 KP = 143.4 KAPPA = 20.85 U0 = 400 .MODEL DCGD D CJO = 6.156E-010 VJ = 0.1767 M = 0.3617 .MODEL DSUB D IS = 7.1E-010 N = 1.3 RS = 0.01232 BV = 25 CJO = 7.957E-011 VJ = 0.3347 M = 0.4933 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2016UTS Spice Model v1.0 Last Revised 2011/1/31 * *Zetex ZXMN2B01F Spice Model v1.0 Last Revised 5/12/07 * .SUBCKT ZXMN2B01F 30 40 50 *------connections-------D-G-S M1 6 2 5 5 Nmod L=1.16E-6 W=0.55 M2 5 2 5 6 Pmod L=1.2E-6 W=0.22 RG 4 22 4.2 RIN 2 5 1E12 RD 3 6 Rmod1 0.05 RL 3 5 3E9 C1 2 5 10E-12 C2 3 4 3E-12 D1 5 3 Dmod1 Rt 5 61 Rmod2 1 Vt 61 62 1 It 5 62 1 Et 2 22 62 5 1 LD 3 30 0.5E-9 LG 4 40 1.0E-9 LS 5 50 1.0E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=3.5E-8 NSUB=1E17 VTO=0.66 +KP=7E-5 RS=.025 KAPPA=0.07 NFS=2E11 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=3.5E-8 NSUB=4.1E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dmod1 D (IS=6E-13 RS=.025 IKF=0.1 TRS1=3e-3 TT=0.6E-8 +CJO=115e-12 BV=23) .MODEL Rmod1 RES (TC1=4.6e-3 TC2=0.9E-5) .MODEL Rmod2 RES (TC1=-1.4e-3 TC2=0E-5) .ENDS ZXMN2B01F * *$ * * (c) 2007 Zetex Semiconductors plc * * The copyright in these models and the designs embodied belong * to Zetex Semiconductors plc (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Zetex, its distributors * or agents. * * Zetex Semiconductors plc, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *---------- DMG3420U Spice Model ---------- .SUBCKT DMG3420U 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02158 RS 30 3 0.001 RG 20 2 1.53 CGS 2 3 3.785E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.25E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.009674 VTO = 1.32 + TOX = 6E-008 NSUB = 1E+016 KP = 53.82 KAPPA = 1E-015 U0 = 400 .MODEL DCGD D CJO = 3.069E-010 VJ = 0.1752 M = 0.4052 .MODEL DSUB D IS = 8.863E-010 N = 1.372 RS = 0.01813 BV = 22 CJO = 4.022E-011 VJ = 0.2305 M = 0.4418 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG3420U Spice Model v1.0 Last Revised 2010/5/9 *---------- DMN2400UV Spice Model ---------- .SUBCKT DMN2400UV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2400UV Spice Model v1.0 Last Revised 2011/10/27 *---------- DMG1024UV Spice Model ---------- .SUBCKT DMG1024UV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.2635 RS 30 3 0.001 RG 20 2 93 CGS 2 3 5.63E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 4.147E+004 ETA = 0.00355 VTO = 0.9014 + TOX = 1.68E-008 NSUB = 3.755E+015 KP = 4.794 KAPPA = 1E-015 U0 = 4.441E-010 .MODEL DCGD D CJO = 2.806E-011 VJ = 0.04974 M = 0.2926 .MODEL DSUB D IS = 2.941E-010 N = 1.586 RS = 0.07503 BV = 22 CJO = 1.491E-011 VJ = 0.219 M = 0.277 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG1024UV Spice Model v1.0 Last Revised 2010/10/4 *---------- DMN2004DMK Spice Model ---------- .SUBCKT DMN2004DMK 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2004DMK Spice Model v1.0 Last Revised 2011/10/27 *---------- DMN2004DWK Spice Model ---------- .SUBCKT DMN2004DWK 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2004DWK Spice Model v1.0 Last Revised 2011/10/27 *---------- DMN2004WK Spice Model ---------- .SUBCKT DMN2004WK 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2004WK Spice Model v1.0 Last Revised 2011/10/27 *---------- DMN2040LTS Spice Model ---------- .SUBCKT DMN2040LTS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01312 RS 30 3 0.001002 RG 20 2 1.37 CGS 2 3 4.74E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001 VTO = 1.023 + TOX = 6E-008 NSUB = 1.901E+016 KP = 50 KAPPA = 30.04 U0 = 400 .MODEL DCGD D CJO = 4.457E-010 VJ = 0.2472 M = 0.4558 .MODEL DSUB D IS = 2.93E-009 N = 1.251 RS = 0.02983 BV = 25 CJO = 3.405E-011 VJ = 0.2561 M = 0.4362 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2040LTS Spice Model v1.0 Last Revised 2010/11/18 *---------- DMN26D0UT Spice Model ---------- .SUBCKT DMN26D0UT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1 RS 30 3 0.001 RG 20 2 1.37 CGS 2 3 1.2E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.039E+004 ETA = 0.0001 VTO = 0.6781 +TOX = 6E-008 NSUB = 1E+015 KP = 0.5796 KAPPA = 1E-015 U0 = 400 .MODEL DCGD D CJO = 5.649E-012 VJ = 0.1656 M = 0.2556 .MODEL DSUB D IS = 1E-006 N = 2.736 RS = 0.6505 BV = 22 CJO = 3.516E-012 VJ = 0.7721 M = 0.3577 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN26D0UT Spice Model v1.0 Last Revised 2011/1/10 *---------- DMN26D0UFB4 Spice Model ---------- .SUBCKT DMN26D0UFB4 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1 RS 30 3 0.001 RG 20 2 1.37 CGS 2 3 1.2E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.039E+004 ETA = 0.0001 VTO = 0.6781 +TOX = 6E-008 NSUB = 1E+015 KP = 0.5796 KAPPA = 1E-015 U0 = 400 .MODEL DCGD D CJO = 5.649E-012 VJ = 0.1656 M = 0.2556 .MODEL DSUB D IS = 1E-006 N = 2.736 RS = 0.6505 BV = 22 CJO = 3.516E-012 VJ = 0.7721 M = 0.3577 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN26D0UFB4 Spice Model v1.0 Last Revised 2011/1/10 *---------- DMN26D0UDJ Spice Model ---------- .SUBCKT DMN26D0UDJ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1 RS 30 3 0.001 RG 20 2 1.37 CGS 2 3 1.2E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.039E+004 ETA = 0.0001 VTO = 0.6781 +TOX = 6E-008 NSUB = 1E+015 KP = 0.5796 KAPPA = 1E-015 U0 = 400 .MODEL DCGD D CJO = 5.649E-012 VJ = 0.1656 M = 0.2556 .MODEL DSUB D IS = 1E-006 N = 2.736 RS = 0.6505 BV = 22 CJO = 3.516E-012 VJ = 0.7721 M = 0.3577 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNDMN26D0UDJ Spice Model v1.0 Last Revised 2011/1/7 *---------- DMN2600UFB Spice Model ---------- .SUBCKT DMN2600UFB 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.3301 RS 30 3 0.001 RG 20 2 72.3 CGS 2 3 6.524E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.15E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 6.963E+004 ETA = 1.444E-015 VTO = 0.9928 + TOX = 6E-008 NSUB = 1E+016 KP = 6.867 KAPPA = 0.41 U0 = 400 .MODEL DCGD D CJO = 2.395E-011 VJ = 0.07377 M = 0.279 .MODEL DSUB D IS = 1.816E-009 N = 1.387 RS = 0.2679 BV = 35 CJO = 5.814E-012 VJ = 0.1256 M = 0.2537 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2600UFB Spice Model v1.0 Last Revised 2011/2/9 *---------- DMN2400UFB4 Spice Model ---------- .SUBCKT DMN2400UFB4 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2400UFB4 Spice Model v1.0 Last Revised 2011/10/27 * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=24JAN2011 *VERSION=1 *PIN_ORDER *1=S1 *2=G1 *3=S2 *4=G2 *5=D2 *6=D2 *7=D1 *8=D1 * .SUBCKT ZXMN2AMC 1 2 3 4 5 6 7 8 *Dev1 N-channel M11 11 12 13 13 Nmod1 L=1.16E-6 W=0.46 M12 13 12 13 11 Pmod1 L=1.3E-6 W=0.22 RG11 2 16 5 RIN11 12 13 1E12 RD11 11 15 Rmod11 0.036 RS11 13 14 1E-6 RL11 13 15 3E9 C11 12 13 8.5E-12 C12 12 15 3E-12 Egt11 16 12 17 13 1 Vgt11 13 18 1 Igt11 13 17 1 Rgt11 17 18 Rmod12 1 D11 13 15 Dmod1 RP11 15 7 1E-6 RP12 15 8 1E-6 LS11 14 1 1.2E-9 *Dev2 N-channel M21 21 22 23 23 Nmod1 L=1.16E-6 W=0.46 M22 23 22 23 21 Pmod1 L=1.3E-6 W=0.22 RG21 4 26 5 RIN21 22 23 1E12 RD21 21 25 Rmod11 0.036 RS21 23 24 1E-6 RL21 23 25 3E9 C21 22 23 8.5E-12 C22 22 25 3E-12 Egt21 26 22 27 23 1 Vgt21 23 28 1 Igt21 23 27 1 Rgt21 27 28 Rmod12 1 D21 23 25 Dmod1 RP21 25 5 1E-6 RP22 25 6 1E-6 LS21 24 3 1.2E-9 .MODEL Nmod1 NMOS (LEVEL=3 TOX=4.5E-8 NSUB=3.5E16 VTO=1.31 +KP=4E-5 RS=.03 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod1 PMOS (LEVEL=3 TOX=4.5E-8 NSUB=3.3E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dmod1 D (IS=5E-12 RS=.025 IKF=0.1 TRS1=1.5e-3 +CJO=230e-12 BV=23) .MODEL Rmod11 RES (TC1=5.8e-3 TC2=1.3E-5) .MODEL Rmod12 RES (TC1=-3e-4 TC2=0) .ENDS * *$ *---------- DMG5802LFX Spice Model ---------- .SUBCKT DMG5802LFX 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01074 RS 30 3 0.001 RG 20 2 1.47 CGS 2 3 9.956E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.9E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 3.802E+005 ETA = 1E-006 VTO = 1.016 + TOX = 6E-008 NSUB = 1E+016 KP = 94.75 KAPPA = 7.017 U0 = 400 .MODEL DCGD D CJO = 6.156E-010 VJ = 0.1767 M = 0.3617 .MODEL DSUB D IS = 1.268E-009 N = 1.142 RS = 0.02111 BV = 30 CJO = 7.957E-011 VJ = 0.3347 M = 0.4933 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG5802LFX Spice Model v1.0 Last Revised 2011/6/27 *---------- DMN2990UDJ Spice Model ---------- .SUBCKT DMN2990UDJ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.3743 RS 30 3 0.001 RG 20 2 113 CGS 2 3 2.5E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.8716 + TOX = 6E-008 NSUB = 1.886E+016 KP = 2.108 U0 = 400 KAPPA = 10.7 .MODEL DCGD D CJO = 1.594E-011 VJ = 0.2646 M = 0.429 .MODEL DSUB D IS = 2.265E-009 N = 1.422 RS = 1.834 BV = 25 CJO = 2.7E-012 VJ = 0.2048 M = 0.1841 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2990UDJ Spice Model v1.0 Last Revised 2011/8/12 *---------- DMN2075UDW Spice Model ---------- .SUBCKT DMN2075UDW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.03596 RS 30 3 0.001 RG 20 2 1.5 CGS 2 3 5.381E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.9505 + TOX = 6E-008 NSUB = 1E+016 KP = 55.47 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.128E-010 VJ = 0.6 M = 0.6001 .MODEL DSUB D IS = 4.456E-010 N = 1.107 RS = 0.06698 BV = 22 CJO = 1E-015 VJ = 0.6 M = 0.7957 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2075UDW Spice Model v1.0M Last Revised 2016/4/7 *DIODES_INC_SPICE_MODEL DMN2065UW *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=17Apr2013 *VERSION=1 *PINS 10=D 20=G 30=S .SUBCKT DMN2065UW 10 20 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 33E-3 RS 23 3 Rmod1 15E-3 RG 20 22 8 RIN 20 23 2E11 RDS 10 23 2E9 CGS 2 3 220E-12 EGD 12 0 2 1 1 *REGD 12 0 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 760E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 .003 RL 30 23 3 LS 30 23 2E-9 .MODEL Nmod1 NMOS (LEVEL=3 VTO=.92 TOX=4.5E-8 NSUB=1E+16 KP=75 NFS=1E+11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 180E-12 VJ = 0.45 M = 0.33 T_ABS=25) .MODEL DSUB D (IS=.1E-12 N=1.02 RS=0.06 BV=22 CJO=94E-12 VJ=0.45 M=0.33 TT=3E-9) .MODEL DLIM D (IS=100U N=1 T_ABS=25) .MODEL Rmod1 RES (TC1=1e-3 TC2=1E-6) .ENDS .SIMULATOR DEFAULT * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *---------- DMN21D2UFB Spice Model ---------- .SUBCKT DMN21D2UFB 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.3846 RS 30 3 0.001 RG 20 2 200 CGS 2 3 2.452E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 0.9675 + TOX = 6E-008 NSUB = 1E+016 KP = 2.2 U0 = 400 KAPPA = 38 .MODEL DCGD D CJO = 1.4E-011 VJ = 0.207 M = 0.3876 .MODEL DSUB D IS = 2.291E-010 N = 1.262 RS = 1.472 + BV = 65 CJO = 3.241E-012 VJ = 0.2008 M = 0.2 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN21D2UFB Spice Model v1.0 Last Revised 2012/5/3 *---------- DMN1019UFDE Spice Model ---------- .SUBCKT DMN1019UFDE 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.003695 RS 30 3 0.001 RG 20 2 1.12 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 2.085E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.8E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001248 VTO = 0.9106 + TOX = 6E-008 NSUB = 1E+016 KP = 208.4 U0 = 400 KAPPA = 94.25 .MODEL DCGD D CJO = 1.867E-009 VJ = 0.2465 M = 0.4333 .MODEL DSUB D IS = 2.007E-009 N = 1.095 RS = 0.01324 + BV = 20 CJO = 5.112E-012 VJ = 6.535E-009 M = 0.00671 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS = 1.223E-008 N = 54.81 BV = 5.381 .ENDS *Diodes DMN1019UFDE Spice Model v1.0 Last Revised 2014/4/03 *DIODES_INC_SPICE_MODEL DMN2013UFDE *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=31Mar2104 *VERSION=1 *PINS 10=D 20=G 30=S .SUBCKT DMN2013UFDE 10 20 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 4E-3 RS 23 3 Rmod1 3E-3 RG 20 22 1.2 RIN 20 23 2E11 RDS 10 23 2E9 CGS 2 3 1200E-12 EGD 12 0 2 1 1 *REGD 12 0 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1900E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 .005 RL 30 23 3 LS 30 23 2E-9 .MODEL Nmod1 NMOS (LEVEL=3 VTO=.9 TOX=4.5E-8 NSUB=1E+16 KP=190 NFS=1E+11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 180E-12 VJ = 0.45 M = 0.33 T_ABS=25) .MODEL DSUB D (IS=200E-12 N=1 RS=0.0128 BV=22 CJO=94E-12 VJ=0.45 M=0.33 TT=3E-9) .MODEL DLIM D (IS=100U N=1 T_ABS=25) .MODEL Rmod1 RES (TC1=.3e-3 TC2=1E-6) .ENDS * (c) 2014 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *---------- DMN2990UFA Spice Model ---------- *NMOS .SUBCKT DMN2990UFA 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.3743 RS 30 3 0.001 RG 20 2 113 CGS 2 3 2.5E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.8716 + TOX = 6E-008 NSUB = 1.886E+016 KP = 2.108 U0 = 400 KAPPA = 10.7 .MODEL DCGD D CJO = 1.594E-011 VJ = 0.2646 M = 0.429 .MODEL DSUB D IS = 2.265E-009 N = 1.422 RS = 1.834 BV = 25 CJO = 2.7E-012 VJ = 0.2048 M = 0.1841 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2990UFA Spice Model v1.0 Last Revised 2012/11/30 *---------- DMN2400UFD Spice Model ---------- .SUBCKT DMN2400UFD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2400UFD Spice Model v1.0 Last Revised 2012/11/28 *---------- DMN1033UCB4 Spice Model ---------- .SUBCKT DMN1033UCB4 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01433 RS 30 3 0.001 RG 20 2 0.98 CGS 2 3 2.151E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.6971 + TOX = 6E-008 NSUB = 1E+016 KP = 88.11 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.2E-009 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 3.509E-009 N = 1.028 RS = 0.05865 BV = 10 CJO = 1E-015 VJ = 0.6 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN1033UCB4 Spice Model v1.0 Last Revised 2015/10/21 *---------- DMN2011UFDE Spice Model ---------- .SUBCKT DMN2011UFDE 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0032 RS 30 3 0.001 RG 20 2 1.49 CGS 2 3 1.99E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.25E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 0.95 + TOX = 6E-008 NSUB = 1E+016 KP = 184 U0 = 400 KAPPA = 80 .MODEL DCGD D CJO = 1.288E-009 VJ = 0.6701 M = 0.6 .MODEL DSUB D IS = 3.806E-009 N = 1.128 RS = 0.007 + BV = 30 CJO = 1.91E-010 VJ = 1E-015 M = 0.03576 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2011UFDE Spice Model v1.0 Last Revised 2014/9/11 *---------- DMN1025UFDB Spice Model ---------- .SUBCKT DMN1025UFDB 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01123 RS 30 3 0.001 RG 20 2 11.46 CGS 2 3 8.145E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.95E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.698 + TOX = 6E-008 NSUB = 1E+016 KP = 68.44 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.104E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 4.939E-009 N = 1.071 RS = 0.06849 BV = 10 CJO = 1E-015 VJ = 0.6 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN1025UFDB Spice Model v1.0 Last Revised 2015/10/21 *---------- DMN1032UCB4 Spice Model ---------- .SUBCKT DMN1032UCB4 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001 RS 30 3 0.01537 RG 20 2 3 CGS 2 3 2.965E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.05E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 0.8636 + TOX = 6E-008 NSUB = 1E+016 KP = 72.73 U0 = 400 KAPPA = 49.24 .MODEL DCGD D CJO = 8.344E-011 VJ = 0.6 M = 0.407 .MODEL DSUB D IS = 1.684E-010 N = 1.089 RS = 0.01698 BV = 15 CJO = 2.507E-010 VJ = 0.6381 M = 0.2149 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN1032UCB4 Spice Model v1.0 Last Revised 2014/4/30 *---------- DMN2023UCB4 Spice Model ---------- .SUBCKT DMN2023UCB4 20 30 40 50 * TERMINALS: G1 S1 G2 S2 X1 10 20 30 Single X2 10 40 50 Single .ENDS *single channel .SUBCKT Single 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007802 RS 30 3 0.001 RG 20 2 1 CGS 2 3 2.306E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.5E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 0.9022 + TOX = 6E-008 NSUB = 1E+016 KP = 202.3 U0 = 400 KAPPA = 1 .MODEL DCGD D CJO = 9.462E-010 VJ = 1 M = 0.7 .MODEL DSUB D IS = 3.451E-008 N = 4.441E-010 RS = 1.473 BV = 65 CJO = 1.058E-011 VJ = 1 M = 0.7 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2023UCB4 Spice Model v1.0 Last Revised 2015/1/5 *---------- DMN2046U Spice Model ---------- .SUBCKT DMN2046U 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0283 RS 30 3 0.001 RG 20 2 62.39 CGS 2 3 2.599E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8493 + TOX = 6E-008 NSUB = 1E+016 KP = 26.84 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.821E-010 VJ = 0.6 M = 0.6077 .MODEL DSUB D IS = 9.26E-009 N = 1.865 RS = 0.007806 BV = 20 CJO = 2.22E-010 VJ = 0.6 M = 0.7301 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2046U Spice Model v1.0 Last Revised 2015/12/10 *---------- DMN1016UCB6 Spice Model ---------- .SUBCKT DMN1016UCB6 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01495 RS 30 3 1E-008 RG 20 2 3 CGS 2 3 2.491E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 0.8702 + TOX = 6E-008 NSUB = 1E+016 KP = 65.71 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 1.5E-010 VJ = 0.8 M = 0.3 .MODEL DSUB D IS = 2.294E-010 N = 1.129 RS = 0.0324 BV = 20 CJO = 3.378E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN1016UCB6 Spice Model v1.0 Last Revised 2015/7/22 *---------- DMN1054UCB4 Spice Model ---------- .SUBCKT DMN1054UCB4 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02848 RS 30 3 0.007857 RG 20 2 1.16 CGS 2 3 5.054E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.75E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 0.8543 + TOX = 6E-008 NSUB = 1E+016 KP = 113.6 U0 = 400 KAPPA = 1 .MODEL DCGD D CJO = 4.172E-010 VJ = 0.6 M = 0.6531 .MODEL DSUB D IS = 1.997E-008 N = 1.295 RS = 0.1266 BV = 15 CJO = 1.714E-012 VJ = 0.6607 M = 0.6958 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN1054UCB4 Spice Model v1.0 Last Revised 2015/1/23 *---------- DMN2005UPS Spice Model ---------- .SUBCKT DMN2005UPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001735 RS 30 3 1E-006 RG 20 2 0.73 CGS 2 3 4.893E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.203E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 0.8495 + TOX = 6E-008 NSUB = 1E+016 KP = 404.4 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 3.312E-009 VJ = 0.1775 M = 0.4588 .MODEL DSUB D IS = 7.261E-009 N = 1.052 RS = 0.006412 BV = 28 CJO = 5.538E-010 VJ = 0.3369 M = 0.6764 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2005UPS Spice Model v1.0 Last Revised 2015/7/20 *---------- DMN2010UDZ Spice Model ---------- .SUBCKT DMN2010UDZ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004472 RS 30 3 0.0001699 RG 20 2 1.09 CGS 2 3 2.367E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.5E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 + DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 0.8879 + TOX = 6E-008 NSUB = 1E+016 KP = 350.3 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 1.902E-009 VJ = 0.3 M = 0.5 .MODEL DSUB D IS = 9.653E-009 N = 1.119 RS = 0.01253 BV = 26 CJO = 2.221E-010 VJ = 0.5 M = 0.5766 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2010UDZ Spice Model v1.0 Last Revised 2015/6/6 *---------- DMN2027UPS Spice Model ---------- .SUBCKT DMN2027UPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007309 RS 30 3 1E-008 RG 20 2 1.5 CGS 2 3 9.632E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.095E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 1.335 + TOX = 6E-008 NSUB = 1E+016 KP = 107.7 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 6.082E-010 VJ = 0.6 M = 0.5 .MODEL DSUB D IS = 3.253E-010 N = 1.168 RS = 0.01176 BV = 28 CJO = 2.221E-010 VJ = 0.6 M = 0.6492 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2027UPS Spice Model v1.0 Last Revised 2015/7/27 *---------- DMN2022UNS Spice Model ---------- .SUBCKT DMN2022UNS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007593 RS 30 3 0.001 RG 20 2 95.7 CGS 2 3 1.702E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.7E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.9482 + TOX = 6E-008 NSUB = 1E+016 KP = 146.6 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 8.774E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 1.408E-008 N = 1.274 RS = 0.01256 BV = 20 CJO = 5.835E-010 VJ = 0.8 M = 0.6 TT=1.49E-7 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2022UNS Spice Model v1.0 Last Revised 2015/11/2 *---------- DMN1250UFEL Spice Model ---------- .SUBCKT DMN1250UFEL 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1663 RS 30 3 1E-008 RG 20 2 2.35 CGS 2 3 1.394E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.48E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 0.9121 + TOX = 6E-008 NSUB = 1E+016 KP = 2.576 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 1.178E-011 VJ = 0.7572 M = 0.2141 .MODEL DSUB D IS = 2.68E-010 N = 1.331 RS = 0.6651 BV = 15 CJO = 5.599E-012 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN1250UFEL Spice Model v1.0 Last Revised 2015/7/29 *---------- DMN2230UQ Spice Model ---------- .SUBCKT DMN2230UQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.05454 RS 30 3 0.001 RG 20 2 59.7 CGS 2 3 1.5E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.55E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.9509 + TOX = 6E-008 NSUB = 1E+016 KP = 15.65 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.13E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 2.851E-009 N = 1.329 RS = 0.1207 BV = 20 CJO = 2.22E-010 VJ = 0.6 M = 0.7957 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2230UQ Spice Model v1.0 Last Revised 2016/01/11 *---------- DMG2302UK Spice Model ---------- .SUBCKT DMG2302UK 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02745 RS 30 3 0.001 RG 20 2 2.64 CGS 2 3 1E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.55E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.6118 + TOX = 6E-008 NSUB = 1E+016 KP = 11.46 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 7.358E-011 VJ = 0.7999 M = 0.6 .MODEL DSUB D IS = 4.844E-007 N = 1.983 RS = 0.05975 BV = 20 CJO = 8E-011 VJ = 0.6 M = 0.7957 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG2302UK Spice Model v1.0 Last Revised 2016/1/22 *---------- DMN2008LFU Spice Model ---------- .SUBCKT DMN2008LFU 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 6.043E-005 RS 30 3 0.001 RG 20 2 465 CGS 2 3 1.308E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.7E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.9748 + TOX = 6E-008 NSUB = 1E+016 KP = 78.89 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 5.312E-010 VJ = 0.6606 M = 0.6 .MODEL DSUB D IS = 1.156E-009 N = 1.088 RS = 0.007059 BV = 26 CJO = 7.728E-010 VJ = 0.8 M = 0.6 TT=2.5E-07 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2008LFU Spice Model v1.0M Last Revised 2016/5/5 *---------- DMN1150UFL3 Spice Model ---------- .SUBCKT DMN1150UFL3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.05481 RS 30 3 0.001 RG 20 2 90 CGS 2 3 6.366E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.707E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 0.7353 + TOX = 6E-008 NSUB = 1E+016 KP = 11.2 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 2.627E-010 VJ = 1 M = 0.9231 .MODEL DSUB D IS = 1.294E-009 N = 1.166 RS = 0.4831 BV = 16.8 CJO = 1.444E-015 VJ = 0.1 M = 0.9578 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN1150UFL3 Spice Model v1.0 Last Revised 2015/04/13 *---------- DMN2500UFB4 Spice Model ---------- .SUBCKT DMN2500UFB4 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.2263 RS 30 3 0.001 RG 20 2 92.87 CGS 2 3 5.5E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8822 TOX = 6E-008 NSUB = 1E+016 KP = 5.422 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.566E-011 VJ = 0.1 M = 0.3169 .MODEL DSUB D IS = 1.051E-009 N = 1.807 RS = 4.441E-010 BV = 26 CJO = 1.5E-011 VJ = 0.6 M = 0.6917 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2500UFB4 Spice Model v1.0M Last Revised 2016/6/30 *---------- DMT2004UFDF Spice Model ---------- .SUBCKT DMT2004UFDF 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.002012 RS 30 3 0.001 RG 20 2 1.55 CGS 2 3 1.143E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.135 + TOX = 6E-008 NSUB = 1E+016 KP = 163.9 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.542E-009 VJ = 0.8 M = 0.3454 .MODEL DSUB D IS = 3.534E-009 N = 1.214 RS = 0.007301 BV = 27 CJO = 2.538E-010 VJ = 0.9 M = 0.7644 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT2004UFDF Spice Model v1.0M Last Revised 2016/6/30 *---------- DMN2004DWKQ Spice Model ---------- .SUBCKT DMN2004DWKQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2004DWKQ Spice Model v1.0M Last Revised 2016/4/14 *---------- ZXMN2F30FHQ Spice Model ---------- .SUBCKT ZXMN2F30FHQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02158 RS 30 3 0.001 RG 20 2 1.53 CGS 2 3 3.785E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.25E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.009674 VTO = 1.32 + TOX = 6E-008 NSUB = 1E+016 KP = 53.82 KAPPA = 1E-015 U0 = 400 .MODEL DCGD D CJO = 3.069E-010 VJ = 0.1752 M = 0.4052 .MODEL DSUB D IS = 8.863E-010 N = 1.372 RS = 0.01813 BV = 22 CJO = 4.022E-011 VJ = 0.2305 M = 0.4418 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes ZXMN2F30FHQ Spice Model v1.0 Last Revised 2016/7/22 *---------- DMN2011UFDF Spice Model ---------- .SUBCKT DMN2011UFDF 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0032 RS 30 3 0.001 RG 20 2 1.49 CGS 2 3 1.99E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.25E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 0.95 + TOX = 6E-008 NSUB = 1E+016 KP = 184 U0 = 400 KAPPA = 80 .MODEL DCGD D CJO = 1.288E-009 VJ = 0.6701 M = 0.6 .MODEL DSUB D IS = 3.806E-009 N = 1.128 RS = 0.007 + BV = 30 CJO = 1.91E-010 VJ = 1E-015 M = 0.03576 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2011UFDF Spice Model v1.0 Last Revised 2014/9/11 *---------- DMN2058U Spice Model ---------- .SUBCKT DMN2058U 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01969 RS 30 3 0.001 RG 20 2 3.1 CGS 2 3 2.453E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.7391 + TOX = 6E-008 NSUB = 1E+016 KP = 34.05 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.179E-010 VJ = 0.2219 M = 0.4485 .MODEL DSUB D IS = 5.374E-009 N = 1.272 RS = 0.06325 BV = 26 CJO = 2.226E-010 VJ = 0.113 M = 0.6916 TT=2.7E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2058U Spice Model v1.0M Last Revised 2016/6/15 *---------- DMN2056U Spice Model ---------- .SUBCKT DMN2056U 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01796 RS 30 3 0.001 RG 20 2 2.6 CGS 2 3 3.089E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.7861 + TOX = 6E-008 NSUB = 1E+016 KP = 44.43 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.836E-010 VJ = 0.1383 M = 0.3956 .MODEL DSUB D IS = 9.074E-010 N = 1.126 RS = 0.07299 BV = 25 CJO = 2.226E-010 VJ = 0.113 M = 0.6916 TT=2.3E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2056U Spice Model v1.0M Last Revised 2016/6/15 *---------- DMN2004WKQ Spice Model ---------- .SUBCKT DMN2004WKQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2004WKQ Spice Model v1.0 Last Revised 2016/9/21 *---------- DMT2004UPS Spice Model ---------- .SUBCKT DMT2004UPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.002012 RS 30 3 0.001 RG 20 2 1.55 CGS 2 3 1.143E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.135 + TOX = 6E-008 NSUB = 1E+016 KP = 163.9 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.542E-009 VJ = 0.8 M = 0.3454 .MODEL DSUB D IS = 3.534E-009 N = 1.214 RS = 0.007301 BV = 27 CJO = 2.538E-010 VJ = 0.9 M = 0.7644 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT2004UPS Spice Model v1.0M Last Revised 2016/6/30 *---------- DMT2004UFG Spice Model ---------- .SUBCKT DMT2004UFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.002012 RS 30 3 0.001 RG 20 2 1.55 CGS 2 3 1.143E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.135 + TOX = 6E-008 NSUB = 1E+016 KP = 163.9 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.542E-009 VJ = 0.8 M = 0.3454 .MODEL DSUB D IS = 3.534E-009 N = 1.214 RS = 0.007301 BV = 27 CJO = 2.538E-010 VJ = 0.9 M = 0.7644 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT2004UFG Spice Model v1.0M Last Revised 2016/6/30 *---------- DMG3414UQ Spice Model ---------- .SUBCKT DMG3414UQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01338 RS 30 3 1E-003 RG 20 2 18 CGS 2 3 7.702E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 5.027E-008 VTO = 0.8394 + TOX = 6E-008 NSUB = 1E+016 KP = 46.34 KAPPA = 1E-015 U0 = 400 .MODEL DCGD D CJO = 4.457E-010 VJ = 0.2472 M = 0.4558 .MODEL DSUB D IS = 4.271E-010 N = 1.076 RS = 0.05217 BV = 25 CJO = 3.405E-011 VJ = 0.2561 M = 0.4362 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG3414UQ Spice Model v1.0 Last Revised 2016/9/26 *ZETEX ZVN2106A Spice Model v1.2 Last Revised 6/4/01 * .SUBCKT ZVN2106A 3 4 5 *------connections-------D-G-S M1 6 2 8 8 N2106AM M2 6 2 8 8 N2106AMS RG 4 2 15 RD 3 6 0.25 RS 8 5 0.94 RL 3 5 100E6 C1 2 8 37E-12 C2 2 3 20E-12 C3 15 14 85E-12 C4 16 8 87E-12 D1 5 3 N2106AD S1 2 15 13 14 SMOD1 S2 13 15 14 13 SMOD1 S3 16 13 13 8 SMOD2 S4 16 2 8 13 SMOD2 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 .MODEL N2106AM NMOS VTO=1.6 IS=1E-15 KP=0.67 +CBD=50E-12 PB=1 .MODEL N2106AMS NMOS VTO=.98 IS=1E-15 KP=0.006 PB=1 .MODEL N2106AD D IS=5.516E-13 RS=.2084 N=1.0078 .MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=3.5 VOFF=2.5 .MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=-5 VOFF=-6 .ENDS ZVN2106A * *$ * *ZETEX ZVN2106G Spice Model v1.2 Last Revised 6/4/01 * .SUBCKT ZVN2106G 3 4 5 *------connections-------D-G-S M1 6 2 8 8 N2106AM M2 6 2 8 8 N2106AMS RG 4 2 15 RD 3 6 0.25 RS 8 5 0.94 RL 3 5 100E6 C1 2 8 37E-12 C2 2 3 20E-12 C3 15 14 85E-12 C4 16 8 87E-12 D1 5 3 N2106AD S1 2 15 13 14 SMOD1 S2 13 15 14 13 SMOD1 S3 16 13 13 8 SMOD2 S4 16 2 8 13 SMOD2 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 .MODEL N2106AM NMOS VTO=1.6 IS=1E-15 KP=0.67 +CBD=50E-12 PB=1 .MODEL N2106AMS NMOS VTO=.98 IS=1E-15 KP=0.006 PB=1 .MODEL N2106AD D IS=5.516E-13 RS=.2084 N=1.0078 .MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=3.5 VOFF=2.5 .MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=-5 VOFF=-6 .ENDS ZVN2106G * *$ * *ZETEX ZVN3306A Spice Model v1.1 Last Revised 3/5/00 * .SUBCKT ZVN3306A 3 4 5 * D G S M1 3 2 5 5 N3306M RG 4 2 270 RL 3 5 1.2E8 C1 2 5 28E-12 C2 3 2 3E-12 D1 5 3 N3306D * .MODEL N3306M NMOS VTO=1.824 RS=1.572 RD=1.436 IS=1E-15 KP=.1233 +CBD=35E-12 PB=1 .MODEL N3306D D IS=5E-12 RS=.768 .ENDS ZVN3306A * *$ * *ZETEX ZVN3306F Spice Model v1.1 Last Revised 3/5/00 * .SUBCKT ZVN3306F 3 4 5 * D G S M1 3 2 5 5 N3306M RG 4 2 270 RL 3 5 1.2E8 C1 2 5 28E-12 C2 3 2 3E-12 D1 5 3 N3306D * .MODEL N3306M NMOS VTO=1.824 RS=1.572 RD=1.436 IS=1E-15 KP=.1233 +CBD=35E-12 PB=1 .MODEL N3306D D IS=5E-12 RS=.768 .ENDS ZVN3306F * *$ * *ZETEX ZVN4106F Spice Model v1.1 Last Revised 3/5/00 * .SUBCKT ZVN4106F 3 4 5 * Nodes D G S M1 3 2 5 5 MOD1 RG 4 2 343 RL 3 5 6E6 C1 2 5 23.5P C2 3 2 4.5P D1 5 3 DIODE1 * .MODEL MOD1 NMOS VTO=2.474 RS=1.68 RD=0.0 IS=1E-15 KP=0.296 +CBD=53.5P PB=1 LAMBDA=267E-6 .MODEL DIODE1 D IS=1.254E-13 N=1.0207 RS=0.222 .ENDS ZVN4106F * *$ * *ZETEX ZVN4206A Spice Model v1.0 Last Revised 30/01/02 * .SUBCKT ZVN4206A 3 4 5 *------connections-------D-G-S M1 6 2 8 8 MOSMOD M2 6 2 8 8 MOSMODS RG 4 2 30 RD 3 6 0.05 RS 8 5 0.5 RL 3 5 6E6 C1 2 8 80E-12 C2 2 3 25E-12 C3 15 14 75E-12 C4 16 8 40E-12 D1 5 3 DMOD S1 2 15 14 13 SMOD1 S2 13 15 13 14 SMOD1 S3 16 13 13 8 SMOD2 S4 16 2 8 13 SMOD2 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 .MODEL MOSMOD NMOS VTO=2.4 IS=1E-15 KP=0.84 CBD=195E-12 PB=1 .MODEL MOSMODS NMOS VTO=1.8 IS=1E-15 KP=0.084 PB=1 .MODEL DMOD D IS=6E-13 RS=.13 N=1.01 .MODEL SMOD1 VSWITCH RON=.1 ROFF=1E5 VON=1.5 VOFF=4.5 .MODEL SMOD2 VSWITCH RON=.1 ROFF=1E5 VON=-5 VOFF=-6 .ENDS ZVN4206A * *$ * *ZETEX ZVN4206AV Spice Model v1.0 Last Revised 30/01/02 * .SUBCKT ZVN4206AV 3 4 5 *------connections-------D-G-S M1 6 2 8 8 MOSMOD M2 6 2 8 8 MOSMODS RG 4 2 30 RD 3 6 0.05 RS 8 5 0.5 RL 3 5 6E6 C1 2 8 80E-12 C2 2 3 25E-12 C3 15 14 75E-12 C4 16 8 40E-12 D1 5 3 DMOD S1 2 15 14 13 SMOD1 S2 13 15 13 14 SMOD1 S3 16 13 13 8 SMOD2 S4 16 2 8 13 SMOD2 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 .MODEL MOSMOD NMOS VTO=2.4 IS=1E-15 KP=0.84 CBD=195E-12 PB=1 .MODEL MOSMODS NMOS VTO=1.8 IS=1E-15 KP=0.084 PB=1 .MODEL DMOD D IS=6E-13 RS=.13 N=1.01 .MODEL SMOD1 VSWITCH RON=.1 ROFF=1E5 VON=1.5 VOFF=4.5 .MODEL SMOD2 VSWITCH RON=.1 ROFF=1E5 VON=-5 VOFF=-6 .ENDS ZVN4206AV * *$ * *ZETEX ZVN4206G Spice Model v1.0 Last Revised 30/01/02 * .SUBCKT ZVN4206G 3 4 5 *------connections-------D-G-S M1 6 2 8 8 MOSMOD M2 6 2 8 8 MOSMODS RG 4 2 30 RD 3 6 0.05 RS 8 5 0.5 RL 3 5 6E6 C1 2 8 80E-12 C2 2 3 25E-12 C3 15 14 75E-12 C4 16 8 40E-12 D1 5 3 DMOD S1 2 15 14 13 SMOD1 S2 13 15 13 14 SMOD1 S3 16 13 13 8 SMOD2 S4 16 2 8 13 SMOD2 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 .MODEL MOSMOD NMOS VTO=2.4 IS=1E-15 KP=0.84 CBD=195E-12 PB=1 .MODEL MOSMODS NMOS VTO=1.8 IS=1E-15 KP=0.084 PB=1 .MODEL DMOD D IS=6E-13 RS=.13 N=1.01 .MODEL SMOD1 VSWITCH RON=.1 ROFF=1E5 VON=1.5 VOFF=4.5 .MODEL SMOD2 VSWITCH RON=.1 ROFF=1E5 VON=-5 VOFF=-6 .ENDS ZVN4206G * *$ * *ZETEX ZVN4206GV Spice Model v1.0 Last Revised 30/01/02 * .SUBCKT ZVN4206GV 3 4 5 *------connections-------D-G-S M1 6 2 8 8 MOSMOD M2 6 2 8 8 MOSMODS RG 4 2 30 RD 3 6 0.05 RS 8 5 0.5 RL 3 5 6E6 C1 2 8 80E-12 C2 2 3 25E-12 C3 15 14 75E-12 C4 16 8 40E-12 D1 5 3 DMOD S1 2 15 14 13 SMOD1 S2 13 15 13 14 SMOD1 S3 16 13 13 8 SMOD2 S4 16 2 8 13 SMOD2 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 .MODEL MOSMOD NMOS VTO=2.4 IS=1E-15 KP=0.84 CBD=195E-12 PB=1 .MODEL MOSMODS NMOS VTO=1.8 IS=1E-15 KP=0.084 PB=1 .MODEL DMOD D IS=6E-13 RS=.13 N=1.01 .MODEL SMOD1 VSWITCH RON=.1 ROFF=1E5 VON=1.5 VOFF=4.5 .MODEL SMOD2 VSWITCH RON=.1 ROFF=1E5 VON=-5 VOFF=-6 .ENDS ZVN4206GV * *$ * *ZETEX ZVN4306A Spice Model v1.1 Last Revised 3/5/00 * .SUBCKT ZVN4306A 3 4 5 *NODES: DRAIN GATE SOURCE M1 3 2 5 5 MOD1 RG 4 2 108 RL 3 5 6E6 C1 2 5 224.5E-12 C2 3 2 10.5E-12 D1 5 3 DIODE1 * .MODEL MOD1 NMOS VTO=2.634 RS=0.2762 RD=0.0 IS=1E-15 KP=9.77 +CBD=405E-12 PB=1 LAMBDA=0 .MODEL DIODE1 D IS=6.19E-13 N=1.0043 RS=0.065 .ENDS ZVN4306A * *$ * *ZETEX ZVN4306AV Spice Model v1.0 Last Revised 23/3/06 * .SUBCKT ZVN4306AV 3 4 5 *NODES: DRAIN GATE SOURCE M1 3 2 5 5 MOD1 RG 4 2 108 RL 3 5 6E6 C1 2 5 224.5E-12 C2 3 2 10.5E-12 D1 5 3 DIODE1 * .MODEL MOD1 NMOS VTO=2.634 RS=0.2762 RD=0.0 IS=1E-15 KP=9.77 +CBD=405E-12 PB=1 LAMBDA=0 .MODEL DIODE1 D IS=6.19E-13 N=1.0043 RS=0.065 .ENDS ZVN4306AV * *$ * *ZETEX ZVN4306G Spice Model v1.1 Last Revised 3/5/00 * .SUBCKT ZVN4306G 3 4 5 *NODES: DRAIN GATE SOURCE M1 3 2 5 5 MOD1 RG 4 2 108 RL 3 5 6E6 C1 2 5 224.5E-12 C2 3 2 10.5E-12 D1 5 3 DIODE1 * .MODEL MOD1 NMOS VTO=2.634 RS=0.2762 RD=0.0 IS=1E-15 KP=9.77 +CBD=405E-12 PB=1 LAMBDA=0 .MODEL DIODE1 D IS=6.19E-13 N=1.0043 RS=0.065 .ENDS ZVN4306G * *$ * *ZETEX ZVN4306GV Spice Model v1.0 Last Revised 23/2/06 * .SUBCKT ZVN4306GV 3 4 5 *NODES: DRAIN GATE SOURCE M1 3 2 5 5 MOD1 RG 4 2 108 RL 3 5 6E6 C1 2 5 224.5E-12 C2 3 2 10.5E-12 D1 5 3 DIODE1 * .MODEL MOD1 NMOS VTO=2.634 RS=0.2762 RD=0.0 IS=1E-15 KP=9.77 +CBD=405E-12 PB=1 LAMBDA=0 .MODEL DIODE1 D IS=6.19E-13 N=1.0043 RS=0.065 .ENDS ZVN4306GV * *$ * *ZETEX ZXMN4A06G Spice Model v3.0 Last Revised 4/12/07 * .SUBCKT ZXMN4A06G 30 40 50 *------connections-------D-G-S M1 6 2 5 5 Nmod L=1.16E-6 W=1.7 M2 5 2 5 6 Pmod L=1.3E-6 W=0.75 RG 4 2 1.6 RIN 2 5 1E12 RD 3 6 Rmod 0.012 RS 5 55 Rmod 0.012 RL 3 5 3E12 C1 2 5 75E-12 C2 3 4 5E-12 D1 5 3 Dbodymod LD 3 30 1E-9 LG 4 40 2.3E-9 LS 55 50 2.3E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=7.5E-8 NSUB=5E16 VTO= 1.75 +KP=1.5E-5 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=8E-12 RS=.016 IKF=10 TRS1=1.5e-3 +CJO=250e-12 BV=44 TT=17e-9) .MODEL Rmod RES (TC1=3.5e-3 TC2=0.8E-5) .ENDS ZXMN4A06G * *$ * *ZETEX ZXMN4A06K Spice Model v3.0 Last Revised 4/12/07 * .SUBCKT ZXMN4A06K 30 40 50 *------connections-------D-G-S M1 6 2 5 5 Nmod L=1.16E-6 W=1.7 M2 5 2 5 6 Pmod L=1.3E-6 W=0.75 RG 4 2 1.6 RIN 2 5 1E12 RD 3 6 Rmod 0.012 RS 5 55 Rmod 0.012 RL 3 5 3E12 C1 2 5 75E-12 C2 3 4 5E-12 D1 5 3 Dbodymod LD 3 30 1E-9 LG 4 40 2.3E-9 LS 55 50 2.3E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=7.5E-8 NSUB=5E16 VTO= 1.75 +KP=1.5E-5 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=8E-12 RS=.016 IKF=10 TRS1=1.5e-3 +CJO=250e-12 BV=44 TT=17e-9) .MODEL Rmod RES (TC1=3.5e-3 TC2=0.8E-5) .ENDS ZXMN4A06K * *$ * *ZETEX ZXMN6A07F Spice Model v1.0 Last Revised 29/6/05 * .SUBCKT ZXMN6A07F 30 40 50 *----connections-----D_G_S M1 6 2 5 5 Nmod L=.6E-6 W=0.34 M2 5 2 5 6 Pmod L=.6E-6 W=0.24 RG 4 2 4 RIN 2 5 1E12 RD 3 6 Rmod1 0.12 RL 6 5 10E9 C1 2 5 25E-12 C2 3 4 15E-12 D1 5 3 Dbodymod LD 3 30 0.5E-9 LG 4 40 1.0E-9 LS 5 50 1.0E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=85E-9 NSUB=1E17 VTO=3.35 XJ=1.6E-6 +KP=9.5E-6 RS=.035 NFS=1.2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=80E-9 NSUB=1E16 XJ=2.3E-6 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=0.5E-12 RS=.055 TRS1=1.5e-3 +CJO=71e-12 TT=24E-9 BV=66) .MODEL Rmod1 RES (TC1=7.3e-3 TC2=1.6E-5) .ENDS ZXMN6A07F * *$ * *ZETEX ZXMN6A07Z Spice Model v1.0 Last Revised 29/6/05 * .SUBCKT ZXMN6A07Z 30 40 50 *----connections-----D_G_S M1 6 2 5 5 Nmod L=.6E-6 W=0.34 M2 5 2 5 6 Pmod L=.6E-6 W=0.24 RG 4 2 4 RIN 2 5 1E12 RD 3 6 Rmod1 0.12 RL 6 5 10E9 C1 2 5 25E-12 C2 3 4 15E-12 D1 5 3 Dbodymod LD 3 30 0.6E-9 LG 4 40 2.0E-9 LS 5 50 2.0E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=85E-9 NSUB=1E17 VTO=3.35 XJ=1.6E-6 +KP=9.5E-6 RS=.035 NFS=1.2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=80E-9 NSUB=1E16 XJ=2.3E-6 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=0.5E-12 RS=.055 TRS1=1.5e-3 +CJO=71e-12 TT=24E-9 BV=66) .MODEL Rmod1 RES (TC1=7.3e-3 TC2=1.6E-5) .ENDS ZXMN6A07Z * *$ * *ZETEX ZXMN6A08E6 Spice Model v2.0 Last Revised 22/2/05 * .SUBCKT ZXMN6A08E6 30 40 50 *----connections-----D_G_S M1 6 2 5 5 Nmod L=1E-6 W=0.6 M2 5 2 5 6 Pmod L=1E-6 W=0.45 RG 4 2 4 RIN 2 5 1E12 RD 3 6 Rmod1 0.075 RL 6 5 10E9 C1 2 5 100E-12 C2 3 4 5E-12 D1 5 3 Dbodymod LD 3 30 0.3E-9 LG 4 40 1.9E-9 LS 5 50 1.9E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=5E-8 NSUB=2E17 VTO=2.25 +KP=1.8E-5 RS=.009 NFS=2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=8E-8 NSUB=1E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=2E-12 RS=.025 IKF=0.06 TRS1=1.5e-3 +CJO=120e-12 BV=61) .MODEL Rmod1 RES (TC1=6e-3 TC2=1.2E-5) .ENDS ZXMN6A08E6 * *$ * *ZETEX ZXMN6A08G Spice Model v2.0 Last Revised 24/10/07 * .SUBCKT ZXMN6A08G 30 40 50 *----connections-----D_G_S M1 6 2 5 5 Nmod L=1E-6 W=0.6 M2 5 2 5 6 Pmod L=1E-6 W=0.45 RG 4 2 4 RIN 2 5 1E12 RD 3 6 Rmod1 0.075 RL 6 5 10E9 C1 2 5 100E-12 C2 3 4 5E-12 D1 5 3 Dbodymod LD 3 30 1E-9 LG 4 40 2.3E-9 LS 5 50 2.3E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=5E-8 NSUB=2E17 VTO=2.25 +KP=1.8E-5 RS=.009 NFS=2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=8E-8 NSUB=1E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=2E-12 RS=.025 IKF=0.06 TRS1=1.5e-3 +CJO=120e-12 BV=61) .MODEL Rmod1 RES (TC1=6e-3 TC2=1.2E-5) .ENDS ZXMN6A08G * *$ * *ZETEX ZXMN6A09DN8 Spice Model v1.5 Last Revised 24/2/05 * .SUBCKT ZXMN6A09DN8 30 40 50 *------connections------D-G-S M1 6 2 8 8 MOSMOD M2 6 2 8 8 MOSMODS RG 4 2 5 RD 3 6 0.005 RS 8 5 0.005 RL 3 5 60E6 C1 2 8 1000E-12 C2 2 3 90E-12 C3 15 14 700E-12 C4 16 8 500E-12 D1 5 3 DMOD S1 2 15 14 13 SMOD1 S2 13 15 13 14 SMOD1 S3 16 13 13 8 SMOD2 S4 16 2 8 13 SMOD2 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 LD 3 30 1.5E-9 LG 4 40 1.2E-9 LS 5 50 1.2E-9 .MODEL MOSMOD NMOS VTO=2.6 IS=1E-15 KP=11.4 CBD=412E-12 PB=1 .MODEL MOSMODS NMOS VTO=2 IS=1E-15 KP=0.1 PB=1 .MODEL DMOD D IS=6E-13 RS=.15 N=1.01 TT=4e-8 .MODEL SMOD1 VSWITCH RON=.1 ROFF=1E5 VON=0 VOFF=3 .MODEL SMOD2 VSWITCH RON=.1 ROFF=1E5 VON=-5 VOFF=-6 .ENDS ZXMN6A09DN8 * *$ * *ZETEX ZXMN6A09G Spice Model v1.5 Last Revised 24/2/05 * .SUBCKT ZXMN6A09G 30 40 50 *------connections------D-G-S M1 6 2 8 8 MOSMOD M2 6 2 8 8 MOSMODS RG 4 2 5 RD 3 6 0.005 RS 8 5 0.005 RL 3 5 60E6 C1 2 8 1000E-12 C2 2 3 90E-12 C3 15 14 700E-12 C4 16 8 500E-12 D1 5 3 DMOD S1 2 15 14 13 SMOD1 S2 13 15 13 14 SMOD1 S3 16 13 13 8 SMOD2 S4 16 2 8 13 SMOD2 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 LD 3 30 1E-9 LG 4 40 2.3E-9 LS 5 50 2.3E-9 .MODEL MOSMOD NMOS VTO=2.6 IS=1E-15 KP=11.4 CBD=412E-12 PB=1 .MODEL MOSMODS NMOS VTO=2 IS=1E-15 KP=0.1 PB=1 .MODEL DMOD D IS=6E-13 RS=.15 N=1.01 TT=4e-8 .MODEL SMOD1 VSWITCH RON=.1 ROFF=1E5 VON=0 VOFF=3 .MODEL SMOD2 VSWITCH RON=.1 ROFF=1E5 VON=-5 VOFF=-6 .ENDS ZXMN6A09G * *$ * *ZETEX ZXMN6A09K Spice Model v1.5 Last Revised 24/2/05 * .SUBCKT ZXMN6A09K 30 40 50 *------connections------D-G-S M1 6 2 8 8 MOSMOD M2 6 2 8 8 MOSMODS RG 4 2 5 RD 3 6 0.005 RS 8 5 0.005 RL 3 5 60E6 C1 2 8 1000E-12 C2 2 3 90E-12 C3 15 14 700E-12 C4 16 8 500E-12 D1 5 3 DMOD S1 2 15 14 13 SMOD1 S2 13 15 13 14 SMOD1 S3 16 13 13 8 SMOD2 S4 16 2 8 13 SMOD2 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 LD 3 30 1.3E-9 LG 4 40 2.4E-9 LS 5 50 2.4E-9 .MODEL MOSMOD NMOS VTO=2.6 IS=1E-15 KP=11.4 CBD=412E-12 PB=1 .MODEL MOSMODS NMOS VTO=2 IS=1E-15 KP=0.1 PB=1 .MODEL DMOD D IS=6E-13 RS=.15 N=1.01 TT=4e-8 .MODEL SMOD1 VSWITCH RON=.1 ROFF=1E5 VON=0 VOFF=3 .MODEL SMOD2 VSWITCH RON=.1 ROFF=1E5 VON=-5 VOFF=-6 .ENDS ZXMN6A09K * *$ * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=30/01/2009 *VERSION=1 *PIN_ORDER Sn1, Gn1, Sn2, Gn2, Dn2, Dn2, Dn1, Dn1 * .SUBCKT ZXMN6A11DN8 1 2 3 4 5 6 7 8 *Dev1 N-channel M11 20 21 22 22 Nnmod1 L=0.8E-6 W=0.5 M12 22 21 22 20 Pnmod1 L=0.6E-6 W=0.45 RG1 26 27 4.5 RIN1 21 22 2E12 RD1 20 24 Rnmod1 0.08 RS1 22 23 1E-6 RL1 23 24 10E9 C11 21 22 220E-12 C12 20 21 1E-12 D1 23 24 Dnmod1 Egt1 26 21 30 22 1 Vgt1 22 31 1.0 Igt1 22 30 1.0 Rgt1 30 31 Rnmod2 1 LD1 24 25 1.5E-9 RP11 7 25 1E-6 RP12 8 25 1E-6 LG1 2 27 1.2E-9 LS1 1 23 1.2E-9 *Dev2 N-channel M21 60 61 62 62 Nnmod1 L=0.8E-6 W=0.5 M22 62 61 62 60 Pnmod1 L=0.6E-6 W=0.45 RG21 66 67 4.5 RIN2 61 62 2E12 RD2 60 64 Rnmod1 0.08 RS2 62 63 1E-6 RL2 63 64 10E9 C21 61 62 220E-12 C22 60 61 1E-12 D2 63 64 Dnmod1 Egt2 66 61 30 22 1 Vgt2 62 71 1.0 Igt2 62 70 1.0 Rgt2 70 71 Rnmod2 1 LD2 64 65 1.5E-9 RP21 5 65 1E-6 RP22 6 65 1E-6 LG2 4 67 1.2E-9 LS2 3 63 1.2E-9 .MODEL Nnmod1 NMOS (LEVEL=3 TOX=8E-8 NSUB=1E17 VTO=2.45 KP=1.6E-5 +RS=.007 NFS=2E11 KAPPA=0.06 IS=1E-16 N=10) .MODEL Pnmod1 PMOS (LEVEL=3 TOX=8E-8 NSUB=1E16 TPG=-1 IS=1E-16 N=10) .MODEL Dnmod1 D (IS=1.8E-13 RS=.023 TT=2.2e-8 CJO=90e-12 BV=63) .MODEL Rnmod1 RES (TC1=5.5e-3 TC2=1.4E-5) .MODEL Rnmod2 RES (TC1=-1.04e-3 TC2=-2E-6) .ENDS * *$ *ZETEX ZXMN6A11G Spice Model v1.0 Last Revised 29/11/07 * .SUBCKT ZXMN6A11G 30 40 50 *----connections-----D_G_S M1 6 2 5 5 Nmod L=0.8E-6 W=0.5 M2 5 2 5 6 Pmod L=1E-6 W=0.45 RG 4 22 2 RIN1 2 5 2E12 RIN2 22 5 2E12 RD 3 6 Rmod1 0.08 RL 6 5 10E9 C1 2 5 220E-12 C2 3 4 1E-12 D1 5 3 Dmod1 Rt 5 61 Rmod2 1 Vt 61 62 1 It 5 62 1 Et 2 22 62 5 1 LD 3 30 1E-9 LG 4 40 2.3E-9 LS 5 50 2.3E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=8E-8 NSUB=1E17 VTO=2.45 KP=1.6E-5 +RS=.007 NFS=2E11 KAPPA=0.06 IS=1E-16 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=8E-8 NSUB=1E16 TPG=-1 IS=1E-16 N=10) .MODEL Dmod1 D (IS=1.8E-13 RS=.023 TT=2.2e-8 CJO=90e-12 BV=63) .MODEL Rmod1 RES (TC1=5.5e-3 TC2=1.4E-5) .MODEL Rmod2 RES (TC1=1e-3 TC2=0E-5) .ENDS ZXMN6A11G * *$ * *ZETEX ZXMN6A11Z Spice Model v1.0 Last Revised 29/11/07 * .SUBCKT ZXMN6A11Z 30 40 50 *----connections-----D_G_S M1 6 2 5 5 Nmod L=0.8E-6 W=0.5 M2 5 2 5 6 Pmod L=1E-6 W=0.45 RG 4 22 2 RIN1 2 5 2E12 RIN2 22 5 2E12 RD 3 6 Rmod1 0.08 RL 6 5 10E9 C1 2 5 220E-12 C2 3 4 1E-12 D1 5 3 Dmod1 Rt 5 61 Rmod2 1 Vt 61 62 1 It 5 62 1 Et 2 22 62 5 1 LD 3 30 1.3E-9 LG 4 40 2.4E-9 LS 5 50 2.4E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=8E-8 NSUB=1E17 VTO=2.45 KP=1.6E-5 +RS=.007 NFS=2E11 KAPPA=0.06 IS=1E-16 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=8E-8 NSUB=1E16 TPG=-1 IS=1E-16 N=10) .MODEL Dmod1 D (IS=1.8E-13 RS=.023 TT=2.2e-8 CJO=90e-12 BV=63) .MODEL Rmod1 RES (TC1=5.5e-3 TC2=1.4E-5) .MODEL Rmod2 RES (TC1=1e-3 TC2=0E-5) .ENDS ZXMN6A11Z * *$ * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=30/01/2009 *VERSION=1 *PIN_ORDER Sn1, Gn1, Sn2, Gn2, Dn2, Dn2, Dn1, Dn1 * .SUBCKT ZXMN6A25DN8 1 2 3 4 5 6 7 8 *Dev1 N-channel M11 20 21 22 22 Nnmod1 L=1E-6 W=2 M12 22 21 22 20 Pnmod1 L=1E-6 W=1.5 RG1 26 27 2 RIN1 21 22 2E12 RD1 20 24 Rnmod1 0.04 RS1 22 23 1e-6 RL1 23 24 10E9 C11 21 22 200E-12 C12 20 21 5E-12 D1 23 24 Dnmod1 Egt1 26 21 30 22 1 Vgt1 22 31 1.0 Igt1 22 30 1.0 Rgt1 30 31 Rnmod2 1 LD1 24 25 1.5E-9 RP11 7 25 1E-6 RP12 8 25 1E-6 LG1 2 27 1.2E-9 LS1 1 23 1.2E-9 *Dev2 N-channel M21 60 61 62 62 Nnmod1 L=1E-6 W=2 M22 62 61 62 60 Pnmod1 L=1E-6 W=1.5 RG2 66 67 2 RIN2 61 62 2E12 RD2 60 64 Rnmod1 0.04 RS2 62 63 1e-6 RL2 63 64 10E9 C21 61 62 200E-12 C22 60 61 5E-12 D2 63 64 Dnmod1 Egt2 66 61 30 22 1 Vgt2 62 71 1.0 Igt2 62 70 1.0 Rgt2 70 71 Rnmod2 1 LD2 64 65 1.5E-9 RP21 5 65 1E-6 RP22 6 65 1E-6 LG2 4 67 1.2E-9 LS2 3 63 1.2E-9 .MODEL Nnmod1 NMOS (LEVEL=3 TOX=8E-8 NSUB=6E16 VTO=2.4 KP=1.6E-5 +RS=.006 NFS=5E11 KAPPA=0.06 IS=1E-16 N=10) .MODEL Pnmod1 PMOS (LEVEL=3 TOX=8E-8 NSUB=6.6E15 TPG=-1 IS=1E-16 N=10) .MODEL Dnmod1 D (IS=3E-12 RS=.02 TT=2.3e-8 CJO=210e-12 BV=66) .MODEL Rnmod1 RES (TC1=3.4e-3 TC2=-1.5E-5) .MODEL Rnmod2 RES (TC1=1.42E-3e-3 TC2=-1.5E-6) .ENDS * *$ *ZETEX ZXMN6A25G Spice Model v1.0 Last Revised 28/11/07 * .SUBCKT ZXMN6A25G 30 40 50 *----connections-----D_G_S M1 6 2 5 5 Nmod L=1E-6 W=2 M2 5 2 5 6 Pmod L=1E-6 W=1.5 RG 4 22 2 RIN1 2 5 2E12 RIN2 22 5 2E12 RD 3 6 Rmod1 0.04 RL 6 5 10E9 C1 2 5 200E-12 C2 3 4 5E-12 D1 5 3 Dmod1 Rt 5 61 Rmod2 1 Vt 61 62 1 It 5 62 1 Et 2 22 62 5 1 LD 3 30 1E-9 LG 4 40 2.3E-9 LS 5 50 2.3E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=8E-8 NSUB=6E16 VTO=2.4 KP=1.6E-5 +RS=.006 NFS=5E11 KAPPA=0.06 IS=1E-16 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=8E-8 NSUB=6.6E15 TPG=-1 IS=1E-16 N=10) .MODEL Dmod1 D (IS=3E-12 RS=.02 TT=2.3e-8 CJO=210e-12 BV=63) .MODEL Rmod1 RES (TC1=5e-3 TC2=1.4E-5) .MODEL Rmod2 RES (TC1=-1.3e-3 TC2=0E-5) .ENDS ZXMN6A25G * *$ * *ZETEX ZXMN6A25K Spice Model v1.0 Last Revised 28/11/07 * .SUBCKT ZXMN6A25K 30 40 50 *----connections-----D_G_S M1 6 2 5 5 Nmod L=1E-6 W=2 M2 5 2 5 6 Pmod L=1E-6 W=1.5 RG 4 22 2 RIN1 2 5 2E12 RIN2 22 5 2E12 RD 3 6 Rmod1 0.04 RL 6 5 10E9 C1 2 5 200E-12 C2 3 4 5E-12 D1 5 3 Dmod1 Rt 5 61 Rmod2 1 Vt 61 62 1 It 5 62 1 Et 2 22 62 5 1 LD 3 30 1.3E-9 LG 4 40 2.4E-9 LS 5 50 2.4E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=8E-8 NSUB=6E16 VTO=2.4 KP=1.6E-5 +RS=.006 NFS=5E11 KAPPA=0.06 IS=1E-16 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=8E-8 NSUB=6.6E15 TPG=-1 IS=1E-16 N=10) .MODEL Dmod1 D (IS=3E-12 RS=.02 TT=2.3e-8 CJO=210e-12 BV=63) .MODEL Rmod1 RES (TC1=5e-3 TC2=1.4E-5) .MODEL Rmod2 RES (TC1=-1.3e-3 TC2=0E-5) .ENDS ZXMN6A25K * *$ * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=27/10/2008 *VERSION=1 *PIN_ORDER D G S * .SUBCKT ZXMN6A25N8 1 2 3 *Dev1 N-channel M11 20 21 22 22 Nnmod1 L=1E-6 W=2 M12 22 21 22 20 Pnmod1 L=1E-6 W=1.5 RG1 26 27 2 RIN1 21 22 2E12 RD1 20 24 Rnmod1 0.04 RS1 22 23 1e-6 RL1 23 24 10E9 C11 21 22 200E-12 C12 20 21 5E-12 D1 23 24 Dnmod1 Egt1 26 21 30 22 1 Vgt1 22 31 1.0 Igt1 22 30 1.0 Rgt1 30 31 Rnmod2 1 LD1 1 24 1.3E-9 LG1 2 27 1.2E-9 LS1 3 23 1.2E-9 .MODEL Nnmod1 NMOS (LEVEL=3 TOX=8E-8 NSUB=6E16 VTO=2.4 KP=1.6E-5 +RS=.006 NFS=5E11 KAPPA=0.06 IS=1E-16 N=10) .MODEL Pnmod1 PMOS (LEVEL=3 TOX=8E-8 NSUB=6.6E15 TPG=-1 IS=1E-16 N=10) .MODEL Dnmod1 D (IS=3E-12 RS=.02 TT=2.3e-8 CJO=210e-12 BV=66) .MODEL Rnmod1 RES (TC1=3.4e-3 TC2=-1.5E-5) .MODEL Rnmod2 RES (TC1=1.42E-3e-3 TC2=-1.5E-6) .ENDS * *$ *ZETEX ZXMN7A11G Spice Model v1.0 Last Revised 29/11/07 * .SUBCKT ZXMN7A11G 30 40 50 *----connections-----D_G_S M1 6 2 5 5 Nmod L=0.8E-6 W=0.5 M2 5 2 5 6 Pmod L=1E-6 W=0.45 RG 4 22 2.2 RIN1 2 5 2E12 RIN2 22 5 2E12 RD 3 6 Rmod1 0.08 RL 6 5 10E9 C1 2 5 220E-12 C2 3 4 1E-12 D1 5 3 Dmod1 Rt 5 61 Rmod2 1 Vt 61 62 1 It 5 62 1 Et 2 22 62 5 1 LD 3 30 1E-9 LG 4 40 2.3E-9 LS 5 50 2.3E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=8E-8 NSUB=1E17 VTO=1.68 KP=1.6E-5 +RS=.005 NFS=2E11 KAPPA=0.06 IS=1E-16 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=8E-8 NSUB=1E16 TPG=-1 IS=1E-16 N=10) .MODEL Dmod1 D (IS=1.8E-13 RS=.023 TT=2e-8 CJO=90e-12 BV=73) .MODEL Rmod1 RES (TC1=4.5e-3 TC2=1.4E-5) .MODEL Rmod2 RES (TC1=-2e-3 TC2=0E-5) .ENDS ZXMN7A11G * *$ * *ZETEX ZXMN7A11K Spice Model v1.0 Last Revised 29/11/07 * .SUBCKT ZXMN7A11K 30 40 50 *----connections-----D_G_S M1 6 2 5 5 Nmod L=0.8E-6 W=0.5 M2 5 2 5 6 Pmod L=1E-6 W=0.45 RG 4 22 2.2 RIN1 2 5 2E12 RIN2 22 5 2E12 RD 3 6 Rmod1 0.08 RL 6 5 10E9 C1 2 5 220E-12 C2 3 4 1E-12 D1 5 3 Dmod1 Rt 5 61 Rmod2 1 Vt 61 62 1 It 5 62 1 Et 2 22 62 5 1 LD 3 30 1.3E-9 LG 4 40 2.4E-9 LS 5 50 2.4E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=8E-8 NSUB=1E17 VTO=1.68 KP=1.6E-5 +RS=.005 NFS=2E11 KAPPA=0.06 IS=1E-16 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=8E-8 NSUB=1E16 TPG=-1 IS=1E-16 N=10) .MODEL Dmod1 D (IS=1.8E-13 RS=.023 TT=2e-8 CJO=90e-12 BV=73) .MODEL Rmod1 RES (TC1=4.5e-3 TC2=1.4E-5) .MODEL Rmod2 RES (TC1=-2e-3 TC2=0E-5) .ENDS ZXMN7A11K * *$ * *---------- 2N7002A Spice Model ---------- .SUBCKT 2N7002A 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 2.175 RS 30 3 0.001 RG 20 2 79.9 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 2.011E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.9E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001583 VTO = 1.595 + TOX = 6E-008 NSUB = 1E+016 KP = 0.58 U0 = 400 KAPPA = 4.069 .MODEL DCGD D CJO = 1.646E-011 VJ = 0.1277 M = 0.4 .MODEL DSUB D IS = 4.551E-009 N = 1.836 RS = 0.1357 + CJO = 2.877E-012 VJ = 1.307E-009 M = 0.03355 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS = 1.223E-008 N = 54.79 BV = 5.385 .ENDS *Diodes 2N7002A Spice Model v1.0 Last Revised 2016/6/15 *SRC=2N7002DW;DI_2N7002DW;MOSFETs N;Enh;60.0V 0.115A 3.20ohms Diodes Inc. MOSFET - One element of dual .MODEL DI_2N7002DW NMOS( LEVEL=1 VTO=1.50 KP=32.0m GAMMA=1.86 + PHI=.75 LAMBDA=34.2u RD=0.448 RS=0.448 + IS=57.5f PB=0.800 MJ=0.460 CBD=44.5p + CBS=53.4p CGSO=24.0n CGDO=20.0n CGBO=176n ) * -- Assumes default L=100U W=100U -- *SRC=2N7002E;DI_2N7002E;MOSFETs N;Enh;60.0V 0.240A 4.00ohms Diodes Inc. MOSFET .MODEL DI_2N7002E NMOS( LEVEL=1 VTO=2.50 KP=781u GAMMA=3.10 + PHI=.75 LAMBDA=83.2u RD=0.560 RS=0.560 + IS=120f PB=0.800 MJ=0.460 CBD=44.5p + CBS=53.4p CGSO=24.0n CGDO=20.0n CGBO=176n ) * -- Assumes default L=100U W=100U -- *SRC=2N7002K;DI_2N7002K;MOSFETs N;Enh;60.0V 0.300A 2.00ohms Diodes Inc. MOSFET .MODEL DI_2N7002K NMOS( LEVEL=1 VTO=2.50 KP=32.0m GAMMA=3.10 + PHI=.75 LAMBDA=104u RD=0.280 RS=0.280 + IS=150f PB=0.800 MJ=0.460 CBD=98.8p + CBS=119p CGSO=60.0n CGDO=50.0n CGBO=390n ) * -- Assumes default L=100U W=100U -- *---------- 2N7002T Spice Model ---------- .SUBCKT 2N7002T 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.213 RS 30 3 0.001 RG 20 2 71.9 CGS 2 3 1.8E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.6E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.885 + TOX = 6E-008 NSUB = 1E+016 KP = 0.4493 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.522E-011 VJ = 0.6 M = 0.7265 .MODEL DSUB D IS = 2.816E-009 N = 1.731 RS = 0.05482 BV = 20 CJO = 5.5E-011 VJ = 0.6 M = 0.7957 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes 2N7002T Spice Model v1.0M Last Revised 2016/2/1 *SRC=2N7002W;DI_2N7002W;MOSFETs N;Enh;60.0V 0.115A 3.20ohms Diodes Inc. MOSFET .MODEL DI_2N7002W NMOS( LEVEL=1 VTO=1.50 KP=32.0m GAMMA=1.86 + PHI=.75 LAMBDA=40.0u RD=0.448 RS=0.448 + IS=57.5f PB=0.800 MJ=0.460 CBD=44.5p + CBS=53.4p CGSO=24.0n CGDO=20.0n CGBO=176n ) * -- Assumes default L=100U W=100U -- *SRC=BS870;DI_BS870;MOSFETs N;Enh;60.0V 0.250A 3.50ohms Diodes Inc. MOSFET .MODEL DI_BS870 NMOS( LEVEL=1 VTO=2.00 KP=32.0m GAMMA=2.48 + PHI=.75 LAMBDA=86.8u RD=0.490 RS=0.490 + IS=125f PB=0.800 MJ=0.460 CBD=29.8p + CBS=35.8p CGSO=24.0n CGDO=20.0n CGBO=176n ) * -- Assumes default L=100U W=100U -- *ZETEX BSS138 Spice Model v2.0 Last Revised 5/4/07 * .SUBCKT BSS138/ZTX 3 4 5 * Nodes D G S M1 3 2 5 5 MOD1 RG 4 2 20 RL 3 5 6E6 C1 2 5 30E-12 C2 3 2 1E-12 C3 7 5 58E-12 D1 5 3 Dmod1 D2 6 3 Dmod2 Egs1 2 6 2 5 1 Egs2 8 5 2 5 1 S1 2 7 3 2 SMOD1a S2 7 8 3 2 SMOD1b .MODEL MOD1 NMOS VTO=1 RS=1.58 RD=0.0 IS=1E-15 KP=0.395 +CBD=53.5E-12 PB=1 LAMBDA=267E-6 .MODEL Dmod1 D IS=1.254E-13 N=1.0207 RS=0.222 .MODEL Dmod2 D CJO=40E-12 .MODEL SMOD1a VSWITCH RON=1e-2 ROFF=1e4 VON=-1 VOFF=1 .MODEL SMOD1b VSWITCH RON=1e-2 ROFF=1e4 VON=1 VOFF=-1 .ENDS * *$ * *---------- BSS138DW Spice Model ---------- .SUBCKT BSS138DW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.9338 RS 30 3 0.001 RG 20 2 47 CGS 2 3 1.906E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.9E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 1E-012 VTO = 1.422 + TOX = 6E-008 NSUB = 1E+016 KP = 0.5025 U0 = 400 KAPPA = 7.117 .MODEL DCGD D CJO = 9.463E-012 VJ = 6.446 M = 0.9816 .MODEL DSUB D IS = 7.582E-010 N = 1.586 RS = 0.1976 + BV = 65 CJO = 1.173E-011 VJ = 0.03727 M = 0.2868 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes BSS138DW Spice Model v1.0 Last Revised 2012/8/22 *---------- BSS138W Spice Model ---------- .SUBCKT BSS138W 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.9338 RS 30 3 0.001 RG 20 2 47 CGS 2 3 1.906E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.9E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 1E-012 VTO = 1.422 + TOX = 6E-008 NSUB = 1E+016 KP = 0.5025 U0 = 400 KAPPA = 7.117 .MODEL DCGD D CJO = 9.463E-012 VJ = 6.446 M = 0.9816 .MODEL DSUB D IS = 7.582E-010 N = 1.586 RS = 0.1976 + BV = 65 CJO = 1.173E-011 VJ = 0.03727 M = 0.2868 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes BSS138W Spice Model v1.0 Last Revised 2012/8/22 *SRC=DMN5010VAK;DI_DMN5010VAK;MOSFETs N;Enh;50.0V 0.280A 2.00ohms Diodes Inc. N Channel MOSFET .MODEL DI_DMN5010VAK NMOS( LEVEL=1 VTO=1.00 KP=0.200 GAMMA=1.24 + PHI=.75 LAMBDA=117u RD=0.280 RS=0.280 + IS=140f PB=0.800 MJ=0.460 CBD=98.8p + CBS=119p CGSO=60.0n CGDO=50.0n CGBO=390n ) * -- Assumes default L=100U W=100U -- *SRC=DMN55D0UT;DI_DMN55D0UT;MOSFETs N;Enh;50.0V 0.160A 4.00ohms Diodes Inc MOSFET .MODEL DI_DMN55D0UT NMOS( LEVEL=1 VTO=1.00 KP=0.324 GAMMA=1.24 + PHI=.75 LAMBDA=133u RD=0.560 RS=0.560 + IS=80.0f PB=0.800 MJ=0.460 CBD=9.60p + CBS=11.5p CGSO=25.2n CGDO=21.0n CGBO=204n ) * -- Assumes default L=100U W=100U -- *---------- DMN5L06DWK Spice Model ---------- .SUBCKT DMN5L06DWK 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.449 RS 30 3 0.001 RG 20 2 127 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 2.688E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001583 VTO = 1.189 TOX = 6E-008 NSUB = 1E+016 KP = 1.163 U0 = 400 KAPPA = 14.08 .MODEL DCGD D CJO = 1.808E-011 VJ = 0.134 M = 0.369 .MODEL DSUB D IS = 247.6E-9 N = 1.566 RS = 0.358 EG = 0.06341 XTI = 8.194 + TNOM = 217.5 BV = 70 CJO = 2.877E-012 VJ = 1.307E-009 M = 0.03355 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS = 2.728E-008 N = 66.22 BV = 5.068 .ENDs *Diodes DMN5L06DWK Spice Model v1.0 Last Revised 2013/2/18 *---------- DMN5L06K Spice Model ---------- .SUBCKT DMN5L06K 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.449 RS 30 3 0.001 RG 20 2 127 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 2.688E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001583 VTO = 1.189 TOX = 6E-008 NSUB = 1E+016 KP = 1.163 U0 = 400 KAPPA = 14.08 .MODEL DCGD D CJO = 1.808E-011 VJ = 0.134 M = 0.369 .MODEL DSUB D IS = 247.6E-9 N = 1.566 RS = 0.358 EG = 0.06341 XTI = 8.194 + TNOM = 217.5 BV = 70 CJO = 2.877E-012 VJ = 1.307E-009 M = 0.03355 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS = 2.728E-008 N = 66.22 BV = 5.068 .ENDs *Diodes DMN5L06K Spice Model v1.0 Last Revised 2013/2/18 *---------- DMN5L06TK Spice Model ---------- .SUBCKT DMN5L06TK 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.449 RS 30 3 0.001 RG 20 2 127 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 2.688E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001583 VTO = 1.189 TOX = 6E-008 NSUB = 1E+016 KP = 1.163 U0 = 400 KAPPA = 14.08 .MODEL DCGD D CJO = 1.808E-011 VJ = 0.134 M = 0.369 .MODEL DSUB D IS = 247.6E-9 N = 1.566 RS = 0.358 EG = 0.06341 XTI = 8.194 + TNOM = 217.5 BV = 70 CJO = 2.877E-012 VJ = 1.307E-009 M = 0.03355 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS = 2.728E-008 N = 66.22 BV = 5.068 .ENDs *Diodes DMN5L06TK Spice Model v1.0 Last Revised 2013/2/18 *SRC=DMN5L06VK;DI_DMN5L06VK;MOSFETs N;Enh;50.0V 0.280A 2.00ohms Diodes Inc MOSFET .MODEL DI_DMN5L06VK NMOS( LEVEL=1 VTO=1.00 KP=0.200 GAMMA=1.24 + PHI=.75 LAMBDA=117u RD=0.280 RS=0.280 + IS=140f PB=0.800 MJ=0.460 CBD=98.8p + CBS=119p CGSO=60.0n CGDO=50.0n CGBO=390n ) * -- Assumes default L=100U W=100U -- *---------- DMN5L06VK Spice Model ---------- .SUBCKT DMN5L06VK 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.329 RS 30 3 0.001 RG 20 2 286.8 CGS 2 3 5.5E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8012 + TOX = 6E-008 NSUB = 1E+016 KP = 1.115 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.318E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.493E-006 N = 2.385 RS = 0.2266 BV = 50 CJO = 3E-011 VJ = 0.6 M = 0.7932 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN5L06VK Spice Model v1.0M Last Revised 2016/1/27 *---------- DMN5L06WK Spice Model ---------- .SUBCKT DMN5L06WK 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.449 RS 30 3 0.001 RG 20 2 127 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 2.688E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001583 VTO = 1.189 TOX = 6E-008 NSUB = 1E+016 KP = 1.163 U0 = 400 KAPPA = 14.08 .MODEL DCGD D CJO = 1.808E-011 VJ = 0.134 M = 0.369 .MODEL DSUB D IS = 247.6E-9 N = 1.566 RS = 0.358 EG = 0.06341 XTI = 8.194 + TNOM = 217.5 BV = 70 CJO = 2.877E-012 VJ = 1.307E-009 M = 0.03355 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS = 2.728E-008 N = 66.22 BV = 5.068 .ENDs *Diodes DMN5L06WK Spice Model v1.0 Last Revised 2013/2/18 *---------- DMN601DMK Spice Model ---------- .SUBCKT DMN601DMK 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.631 RS 30 3 0.001 RG 20 2 133 CGS 2 3 2.711E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.628E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0 VTO = 1.596 + TOX = 6E-008 NSUB = 1.945E+017 KP = 1.196 KAPPA = 1E-015 U0 = 400 THETA = 5.648E-007 .MODEL DCGD D CJO = 2.628E-011 VJ = 0.6 M = 0.2561 .MODEL DSUB D IS = 2.05E-009 N = 1.698 RS = 0.1282 BV = 65 CJO = 6.226E-012 VJ = 1 M = 0.6474 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN601DMK Spice Model v1.0 Last Revised 2012/4/25 *---------- DMN601DWK Spice Model ---------- .SUBCKT DMN601DWK 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.631 RS 30 3 0.001 RG 20 2 133 CGS 2 3 2.711E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.628E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0 VTO = 1.596 + TOX = 6E-008 NSUB = 1.945E+017 KP = 1.196 KAPPA = 1E-015 U0 = 400 THETA = 5.648E-007 .MODEL DCGD D CJO = 2.628E-011 VJ = 0.6 M = 0.2561 .MODEL DSUB D IS = 2.05E-009 N = 1.698 RS = 0.1282 BV = 65 CJO = 6.226E-012 VJ = 1 M = 0.6474 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN601DWK Spice Model v1.0 Last Revised 2012/4/25 *---------- DMN601K Spice Model ---------- .SUBCKT DMN601K 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.631 RS 30 3 0.001 RG 20 2 133 CGS 2 3 2.711E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.628E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0 VTO = 1.596 + TOX = 6E-008 NSUB = 1.945E+017 KP = 1.196 KAPPA = 1E-015 U0 = 400 THETA = 5.648E-007 .MODEL DCGD D CJO = 2.628E-011 VJ = 0.6 M = 0.2561 .MODEL DSUB D IS = 2.05E-009 N = 1.698 RS = 0.1282 BV = 65 CJO = 6.226E-012 VJ = 1 M = 0.6474 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN601K Spice Model v1.0 Last Revised 2012/4/25 *---------- DMN601TK Spice Model ---------- .SUBCKT DMN601TK 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.631 RS 30 3 0.001 RG 20 2 133 CGS 2 3 2.711E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.628E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0 VTO = 1.596 + TOX = 6E-008 NSUB = 1.945E+017 KP = 1.196 KAPPA = 1E-015 U0 = 400 THETA = 5.648E-007 .MODEL DCGD D CJO = 2.628E-011 VJ = 0.6 M = 0.2561 .MODEL DSUB D IS = 2.05E-009 N = 1.698 RS = 0.1282 BV = 65 CJO = 6.226E-012 VJ = 1 M = 0.6474 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN601TK Spice Model v1.0 Last Revised 2012/4/25 *---------- DMN601VK Spice Model ---------- .SUBCKT DMN601VK 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.631 RS 30 3 0.001 RG 20 2 133 CGS 2 3 2.711E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.628E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0 VTO = 1.596 + TOX = 6E-008 NSUB = 1.945E+017 KP = 1.196 KAPPA = 1E-015 U0 = 400 THETA = 5.648E-007 .MODEL DCGD D CJO = 2.628E-011 VJ = 0.6 M = 0.2561 .MODEL DSUB D IS = 2.05E-009 N = 1.698 RS = 0.1282 BV = 65 CJO = 6.226E-012 VJ = 1 M = 0.6474 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN601VK Spice Model v1.0 Last Revised 2012/4/25 *---------- DMN601WK Spice Model ---------- .SUBCKT DMN601WK 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.631 RS 30 3 0.001 RG 20 2 133 CGS 2 3 2.711E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.628E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0 VTO = 1.596 + TOX = 6E-008 NSUB = 1.945E+017 KP = 1.196 KAPPA = 1E-015 U0 = 400 THETA = 5.648E-007 .MODEL DCGD D CJO = 2.628E-011 VJ = 0.6 M = 0.2561 .MODEL DSUB D IS = 2.05E-009 N = 1.698 RS = 0.1282 BV = 65 CJO = 6.226E-012 VJ = 1 M = 0.6474 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN601WK Spice Model v1.0 Last Revised 2012/4/25 *SRC=DMN66D0LDW;DI_DMN66D0LDW;MOSFETs N;Enh;60.0V 0.115A 5.00ohms Diodes Inc MOSFET .MODEL DI_DMN66D0LDW NMOS( LEVEL=1 VTO=2.00 KP=55.7m GAMMA=2.48 + PHI=.75 LAMBDA=69.6u RD=0.700 RS=0.700 + IS=57.5f PB=0.800 MJ=0.460 CBD=9.88p + CBS=11.9p CGSO=16.8n CGDO=14.0n CGBO=199n ) * -- Assumes default L=100U W=100U -- *SRC=DMN66D0LW;DI_DMN66D0LW;MOSFETs N;Enh;60.0V 0.115A 5.00ohms Diodes Inc MOSFET .MODEL DI_DMN66D0LW NMOS( LEVEL=1 VTO=2.00 KP=55.7m GAMMA=2.48 + PHI=.75 LAMBDA=69.6u RD=0.700 RS=0.700 + IS=57.5f PB=0.800 MJ=0.460 CBD=9.88p + CBS=11.9p CGSO=16.8n CGDO=14.0n CGBO=199n ) * -- Assumes default L=100U W=100U -- *SRC=MMBF170;DI_MMBF170;MOSFETs N;Enh;60.0V 0.500A 2.10ohms Diodes Inc. MOSFET .MODEL DI_MMBF170 NMOS( LEVEL=1 VTO=2.10 KP=18.8m GAMMA=2.60 + PHI=.75 LAMBDA=1.04m RD=0.294 RS=0.294 + IS=250f PB=0.800 MJ=0.460 CBD=29.8p + CBS=35.8p CGSO=24.0n CGDO=20.0n CGBO=176n ) * -- Assumes default L=100U W=100U -- *---------- DMN66D0LT Spice Model ---------- .SUBCKT DMN66D0LT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.631 RS 30 3 0.001 RG 20 2 133 CGS 2 3 2.711E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.628E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0 VTO = 1.596 + TOX = 6E-008 NSUB = 1.945E+017 KP = 1.196 KAPPA = 1E-015 U0 = 400 THETA = 5.648E-007 .MODEL DCGD D CJO = 2.628E-011 VJ = 0.009081 M = 0.2561 .MODEL DSUB D IS = 2.05E-009 N = 1.698 RS = 0.1282 BV = 65 CJO = 6.226E-012 VJ = 1 M = 0.6474 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN66D0LT Spice Model v1.0 Last Revised 2011/1/13 * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=02/11/2009 *VERSION=1 *PIN_ORDER D G S * .SUBCKT ZXMN6A08K 30 40 50 M1 6 2 5 5 Nmod L=1E-6 W=0.6 M2 5 2 5 6 Pmod L=1E-6 W=0.45 RG 4 2 4 RIN 2 5 1E12 RD 3 6 Rmod1 0.075 RL 6 5 10E9 C1 2 5 100E-12 C2 3 4 5E-12 D1 5 3 Dbodymod LD 3 30 1E-9 LG 4 40 2.3E-9 LS 5 50 2.3E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=5E-8 NSUB=2E17 VTO=2.25 +KP=1.8E-5 RS=0.009 NFS=2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=8E-8 NSUB=1E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=2E-12 RS=0.025 IKF=0.06 TRS1=1.5e-3 +CJO=120e-12 BV=61) .MODEL Rmod1 RES (TC1=6e-3 TC2=1.2E-5) .ENDS ZXMN6A08K * *$ *DIODES_INC_SPICE_MODEL DMN6068LK3 N-channel MOSFET *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=21Dec2011 *VERSION=1 *PINS 10=D 20=G 30=S .SUBCKT DMN6068 10 20 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 27E-3 RS 23 3 Rmod1 27E-3 RG 20 22 1.5 RIN 20 23 2E11 RDS 10 23 6E9 CGS 2 3 380E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 426E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 0.0015 LS 30 23 2n .MODEL Nmod1 NMOS (LEVEL=3 VTO=3.4 TOX=6E-8 NSUB=2.8E+17 KP=155 NFS=8E+11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 244E-12 VJ = 0.5 M = 0.43 T_ABS=25) .MODEL DSUB D (IS = .1E-10 N=1.1 RS=0.02 BV=66 CJO=330E-12 VJ=0.42 M=0.5 TT=145E-9 TRS1=2E-3) .MODEL DLIM D (IS=100U N=1 T_ABS=25) .MODEL Rmod1 RES (TC1=2e-3 TC2=6E-6) .ENDS *DIODES_INC_SPICE_MODEL DMN6066SSD N-channel MOSFET *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=29Nov2011 *VERSION=1 .SUBCKT DMN6066 10 20 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 27E-3 RS 23 3 Rmod1 27E-3 RG 20 22 1.5 RIN 20 23 2E11 RDS 10 23 6E9 CGS 2 3 420E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 420E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 0.0015 LS 30 23 3n .MODEL Nmod1 NMOS (LEVEL=3 VTO=3.2 TOX=6E-8 NSUB=3E+17 KP=140 NFS=8E+11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 220E-12 VJ = 0.5 M = 0.43) .MODEL DSUB D (IS = .1E-10 N=1.1 RS=0.02 BV=66 CJO=330E-12 VJ=0.42 M=0.5 TT=11E-9 TRS1=2E-3) .MODEL DLIM D (IS=100U N=1) .MODEL Rmod1 RES (TC1=2e-3 TC2=6E-6) .ENDS .SIMULATOR DEFAULT *ZETEX VN10LF Spice Model v1.1 Last Revised 3/5/00 * .SUBCKT VN10LF 3 4 5 * D G S M1 3 2 5 5 N3306M RG 4 2 270 RL 3 5 1.2E8 C1 2 5 28E-12 C2 3 2 3E-12 D1 5 3 N3306D * .MODEL N3306M NMOS VTO=1.824 RS=1.572 RD=1.436 IS=1E-15 KP=.1233 +CBD=35E-12 PB=1 .MODEL N3306D D IS=5E-12 RS=.768 .ENDS VN10LF * *$ * *---------- DMG1026UV Spice Model ---------- .SUBCKT DMG1026UV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.188 RS 30 3 0.001 RG 20 2 127.7 CGS 2 3 3.079E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 1.099 + TOX = 6E-008 NSUB = 1E+017 KP = 1.832 KAPPA = 1E-015 U0 = 400 .MODEL DCGD D CJO = 1.712E-011 VJ = 0.6 M = 0.5004 .MODEL DSUB D IS = 7.2E-007 N = 2.594 RS = 0.03889 + BV = 35 CJO = 4.301E-012 VJ = 0.2 M = 0.1735 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG1026UV Spice Model v1.0 Last Revised 2014/6/6 *---------- DMN62D1SFB Spice Model ---------- .SUBCKT DMN62D1SFB 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.8574 RS 30 3 0.001 RG 20 2 81.24 CGS 2 3 3.774E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.43E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 1.584 + TOX = 6E-008 NSUB = 1E+016 KP = 0.9918 U0 = 400 KAPPA = 1 .MODEL DCGD D CJO = 2.818E-011 VJ = 0.4 M = 0.5368 .MODEL DSUB D IS = 6.562E-012 N = 1.326 RS = 0.08305 BV = 65 CJO = 5.117E-012 VJ = 0.4 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN62D1SFB Spice Model v1.0 Last Revised 2015/2/26 *---------- DMN4031SSD Spice Model ---------- .SUBCKT DMN4031SSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001 RS 30 3 0.009995 RG 20 2 1.56 CGS 2 3 8.311E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.4E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.001 VTO = 3.195 + TOX = 6E-008 NSUB = 1E+016 KP = 26.57 U0 = 400 KAPPA = 32.33 .MODEL DCGD D CJO = 3.144E-010 VJ = 0.09587 M = 0.3239 .MODEL DSUB D IS = 1.133E-011 N = 1.136 RS = 1.044E-015 BV = 40 CJO = 1.281E-010 VJ = 0.3722 M = 0.5383 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN4031SSD Spice Model v1.0 Last Revised 2011/8/15 *---------- BSN20 Spice Model ---------- .SUBCKT BSN20 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.9338 RS 30 3 0.001 RG 20 2 47 CGS 2 3 1.906E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.9E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 1E-012 VTO = 1.422 + TOX = 6E-008 NSUB = 1E+016 KP = 0.5025 U0 = 400 KAPPA = 7.117 .MODEL DCGD D CJO = 9.463E-012 VJ = 6.446 M = 0.9816 .MODEL DSUB D IS = 7.582E-010 N = 1.586 RS = 0.1976 + BV = 65 CJO = 1.173E-011 VJ = 0.03727 M = 0.2868 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes BSN20 Spice Model v1.0 Last Revised 2012/8/22 *DIODES_INC_SPICE_MODEL DMN62D0LFB N-channel MOSFET *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=07Aug2012 *VERSION=1 .SUBCKT DMN62D0LFB 10 20 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 1.1 RS 23 3 Rmod1 .3 RG 20 22 126 RIN 20 23 2E11 RDS 10 23 6E9 CGS 2 3 40E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 40E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 0.003 LS 30 23 3n .MODEL Nmod1 NMOS (LEVEL=3 VTO=1.15 TOX=5E-8 NSUB=3E+15 KP=3.8 NFS=12E+11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 15E-12 VJ = 0.5 M = 0.43 T_ABS=25) .MODEL DSUB D (IS = 5E-13 N=1.1 RS=0.06 BV=66 CJO=33E-12 VJ=0.42 M=0.5 TT=11E-9 TRS1=2E-3) .MODEL DLIM D (IS=100U N=1 T_ABS=25) .MODEL Rmod1 RES (TC1=.1e-3 TC2=6E-6) .ENDS *---------- DMN65D8LDW Spice Model ---------- .SUBCKT DMN65D8LDW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 2.175 RS 30 3 0.001 RG 20 2 79.9 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 2.011E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.9E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001583 VTO = 1.595 + TOX = 6E-008 NSUB = 1E+016 KP = 0.58 U0 = 400 KAPPA = 4.069 .MODEL DCGD D CJO = 1.646E-011 VJ = 0.1277 M = 0.4 .MODEL DSUB D IS = 4.551E-009 N = 1.836 RS = 0.1357 + CJO = 2.877E-012 VJ = 1.307E-009 M = 0.03355 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS = 1.223E-008 N = 54.79 BV = 5.385 .ENDS *Diodes DMN65D8LDW Spice Model v1.0 Last Revised 2012/7/23 *---------- DMN65D8LFB Spice Model ---------- .SUBCKT DMN65D8LFB 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 2.175 RS 30 3 0.001 RG 20 2 79.9 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 2.011E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.9E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001583 VTO = 1.595 + TOX = 6E-008 NSUB = 1E+016 KP = 0.58 U0 = 400 KAPPA = 4.069 .MODEL DCGD D CJO = 1.646E-011 VJ = 0.1277 M = 0.4 .MODEL DSUB D IS = 4.551E-009 N = 1.836 RS = 0.1357 + CJO = 2.877E-012 VJ = 1.307E-009 M = 0.03355 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS = 1.223E-008 N = 54.79 BV = 5.385 .ENDS *Diodes DMN65D8LFB Spice Model v1.0 Last Revised 2012/7/23 *---------- DMN6040SVT Spice Model ---------- .SUBCKT DMN6040SVT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02611 RS 30 3 0.001 RG 20 2 1.18 CGS 2 3 1.277E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.01616 VTO = 2.642 + TOX = 6E-008 NSUB = 1E+016 KP = 47.18 U0 = 400 KAPPA = 1 .MODEL DCGD D CJO = 3.638E-010 VJ = 0.3003 M = 0.4785 .MODEL DSUB D IS = 1.146E-011 N = 1.109 RS = 0.008602 BV = 65 CJO = 1.445E-010 VJ = 0.3616 M = 0.5674 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN6040SVT Spice Model v1.0 Last Revised 2012/3/26 *---------- DMN65D8LW Spice Model ---------- .SUBCKT DMN65D8LW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 2.175 RS 30 3 0.001 RG 20 2 79.9 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 2.011E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.9E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001583 VTO = 1.595 + TOX = 6E-008 NSUB = 1E+016 KP = 0.58 U0 = 400 KAPPA = 4.069 .MODEL DCGD D CJO = 1.646E-011 VJ = 0.1277 M = 0.4 .MODEL DSUB D IS = 4.551E-009 N = 1.836 RS = 0.1357 + CJO = 2.877E-012 VJ = 1.307E-009 M = 0.03355 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS = 1.223E-008 N = 54.79 BV = 5.385 .ENDS *Diodes DMN65D8LW Spice Model v1.0 Last Revised 2012/7/23 *---------- DMN6040SFDE Spice Model ---------- .SUBCKT DMN6040SFDE 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02611 RS 30 3 0.001 RG 20 2 1.18 CGS 2 3 1.277E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.01616 VTO = 2.642 + TOX = 6E-008 NSUB = 1E+016 KP = 47.18 U0 = 400 KAPPA = 1 .MODEL DCGD D CJO = 3.638E-010 VJ = 0.3003 M = 0.4785 .MODEL DSUB D IS = 1.146E-011 N = 1.109 RS = 0.008602 BV = 65 CJO = 1.445E-010 VJ = 0.3616 M = 0.5674 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN6040SFDE Spice Model v1.0 Last Revised 2012/11/30 *---------- DMN6040SSD Spice Model ---------- .SUBCKT DMN6040SSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02611 RS 30 3 0.001 RG 20 2 1.18 CGS 2 3 1.277E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.01616 VTO = 2.642 + TOX = 6E-008 NSUB = 1E+016 KP = 47.18 U0 = 400 KAPPA = 1 .MODEL DCGD D CJO = 3.638E-010 VJ = 0.3003 M = 0.4785 .MODEL DSUB D IS = 1.146E-011 N = 1.109 RS = 0.008602 BV = 65 CJO = 1.445E-010 VJ = 0.3616 M = 0.5674 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN6040SSD Spice Model v1.0 Last Revised 2012/11/30 *---------- DMN6040SSS Spice Model ---------- .SUBCKT DMN6040SSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02611 RS 30 3 0.001 RG 20 2 1.18 CGS 2 3 1.277E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.01616 VTO = 2.642 + TOX = 6E-008 NSUB = 1E+016 KP = 47.18 U0 = 400 KAPPA = 1 .MODEL DCGD D CJO = 3.638E-010 VJ = 0.3003 M = 0.4785 .MODEL DSUB D IS = 1.146E-011 N = 1.109 RS = 0.008602 BV = 65 CJO = 1.445E-010 VJ = 0.3616 M = 0.5674 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN6040SSS Spice Model v1.0 Last Revised 2012/11/30 *---------- DMN65D8L Spice Model ---------- .SUBCKT DMN65D8L 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 2.175 RS 30 3 0.001 RG 20 2 79.9 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 2.011E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.9E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001583 VTO = 1.595 + TOX = 6E-008 NSUB = 1E+016 KP = 0.58 U0 = 400 KAPPA = 4.069 .MODEL DCGD D CJO = 1.646E-011 VJ = 0.1277 M = 0.4 .MODEL DSUB D IS = 4.551E-009 N = 1.836 RS = 0.1357 + CJO = 2.877E-012 VJ = 1.307E-009 M = 0.03355 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS = 1.223E-008 N = 54.79 BV = 5.385 .ENDS *Diodes DMN65D8L Spice Model v1.0 Last Revised 2012/7/23 *---------- DMN6040SK3 Spice Model ---------- .SUBCKT DMN6040SK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02611 RS 30 3 0.001 RG 20 2 1.18 CGS 2 3 1.277E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.01616 VTO = 2.642 + TOX = 6E-008 NSUB = 1E+016 KP = 47.18 U0 = 400 KAPPA = 1 .MODEL DCGD D CJO = 3.638E-010 VJ = 0.3003 M = 0.4785 .MODEL DSUB D IS = 1.146E-011 N = 1.109 RS = 0.008602 BV = 65 CJO = 1.445E-010 VJ = 0.3616 M = 0.5674 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN6040SK3 Spice Model v1.0 Last Revised 2013/04/17 *---------- DMN62D0LFD Spice Model ---------- .SUBCKT DMN62D0LFD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.631 RS 30 3 0.001 RG 20 2 133 CGS 2 3 2.79E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.4E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0 VTO = 1.596 + TOX = 6E-008 NSUB = 1.945E+017 KP = 1.196 KAPPA = 1E-015 U0 = 400 THETA = 5.648E-007 .MODEL DCGD D CJO = 1.283E-011 VJ = 0.6 M = 0.4065 .MODEL DSUB D IS = 2.05E-009 N = 1.698 RS = 0.1282 BV = 65 CJO = 8.365E-012 VJ = 0.7198 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN62D0LFD Spice Model v1.1 Last Revised 2014/12/8 *---------- DMN4026SSD Spice Model ---------- .SUBCKT DMN4026SSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.008754 RS 30 3 0.001 RG 20 2 1.7 CGS 2 3 1.04E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 2.455 + TOX = 6E-008 NSUB = 1E+017 KP = 49.07 KAPPA = 1E-015 U0 = 400 .MODEL DCGD D CJO = 2.703E-010 VJ = 0.2734 M = 0.3551 .MODEL DSUB D IS = 2.278E-010 N = 1.242 RS = 0.007361 + BV = 50 CJO = 2.302E-010 VJ = 0.3812 M = 0.5232 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN4026SSD Spice Model v1.0 Last Revised 2014/2/5 *---------- DMN6140L Spice Model ---------- .SUBCKT DMN6140L 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.06658 RS 30 3 0.001 RG 20 2 0.65 CGS 2 3 3.184E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.4E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 + VTO = 1.88 TOX = 6E-008 NSUB = 1E+016 KP = 5.783 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.846E-010 VJ = 0.6 M = 0.6135 .MODEL DSUB D IS = 2.247E-010 N = 1.308 RS = 0.02648 BV = 65 CJO = 6.828E-012 VJ = 0.7 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN6140L Spice Model v1.0 Last Revised 2014/11/14 *---------- DMN4010LFG Spice Model ---------- .SUBCKT DMN4010LFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005483 RS 30 3 0.001 RG 20 2 1.64 CGS 2 3 1.736E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.58E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 2.274 + TOX = 6E-008 NSUB = 1E+017 KP = 95.33 KAPPA = 24.52 U0 = 400 .MODEL DCGD D CJO = 8.624E-010 VJ = 0.3663 M = 0.4967 .MODEL DSUB D IS = 2.495E-010 N = 1.227 RS = 0.003519 + BV = 45 CJO = 7.592E-010 VJ = 0.3012 M = 0.5211 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN4010LFG Spice Model v1.0 Last Revised 2014/8/04 *---------- DMN6013LFG Spice Model ---------- .SUBCKT DMN6013LFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005556 RS 30 3 0.001 RG 20 2 1.49 CGS 2 3 2.658E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.56E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.766 + TOX = 6E-008 NSUB = 1E+016 KP = 67.2 U0 = 400 KAPPA = 38.59 .MODEL DCGD D CJO = 1.231E-009 VJ = 0.6368 M = 0.5502 .MODEL DSUB D IS = 5E-011 N = 1.108 RS = 0.002574 + BV = 70 CJO = 5.209E-010 VJ = 0.9791 M = 0.89 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN6013LFG Spice Model v1.0 Last Revised 2014/9/15 *---------- DMT6016LSS Spice Model ---------- .SUBCKT DMT6016LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.008248 RS 30 3 0.001 RG 20 2 1.35 CGS 2 3 8.551E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.685 + TOX = 6E-008 NSUB = 1E+016 KP = 44 U0 = 400 KAPPA = 1 .MODEL DCGD D CJO = 3.956E-010 VJ = 0.8 M = 0.6557 .MODEL DSUB D IS = 3.752E-008 N = 1.624 RS = 0.005938 BV = 65 CJO = 5.236E-010 VJ = 1 M = 0.2051 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT6016LSS Spice Model v1.0 Last Revised 2014/12/19 *---------- DMT6016LPS Spice Model ---------- .SUBCKT DMT6016LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.006728 RS 30 3 0.001 RG 20 2 1.35 CGS 2 3 8.475E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.61 + TOX = 6E-008 NSUB = 1E+016 KP = 37.72 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.945E-010 VJ = 0.8 M = 0.6507 .MODEL DSUB D IS = 2.448E-010 N = 1.248 RS = 0.006471 BV = 60 CJO = 5.274E-010 VJ = 0.8 M = 0.6 TT=2.2E-010 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT6016LPS Spice Model v1.0 Last Revised 2015/11/10 *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=17/12/2014 *VERSION=1 .SUBCKT DMN6016LFDF 10 20 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 6E-3 RS 23 3 Rmod1 6E-3 RG 20 22 1.5 RIN 20 23 2E11 RDS 10 23 6E9 CGS 2 3 740E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 660E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 0.00015 LS 30 23 3n .MODEL Nmod1 NMOS (LEVEL=3 VTO=2.77 TOX=7.5E-8 NSUB=7.5E+16 KP=120 NFS=7E+11 IS=.5E-15 N=10) .MODEL DCGD D (CJO = 320E-12 VJ = 0.42 M = 0.4 T_ABS=25) .MODEL DSUB D (IS = .1E-10 N=1.1 RS=0.004 BV=66 CJO=500E-12 VJ=0.42 M=0.5 TT=18E-9 TRS1=2E-3 IKF=10) .MODEL DLIM D (IS=100U N=1 T_ABS=25) .MODEL Rmod1 RES (TC1=1.5e-3 TC2=6E-6) *---------- DMT6009LFG Spice Model ---------- .SUBCKT DMT6009LFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.006099 RS 30 3 1E-008 RG 20 2 1.71 CGS 2 3 2.016E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.086 + TOX = 6E-008 NSUB = 1E+016 KP = 136.4 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 4.367E-010 VJ = 1 M = 0.5797 .MODEL DSUB D IS = 2.239E-010 N = 1.183 RS = 0.005972 BV = 67 CJO = 8.953E-010 VJ = 1 M = 0.201 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT6009LFG Spice Model v1.0 Last Revised 2015/7/27 *---------- DMNH4011SK3 Spice Model ---------- .SUBCKT DMNH4011SK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004592 RS 30 3 0.001 RG 20 2 2.19 CGS 2 3 1.266E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.749 + TOX = 6E-008 NSUB = 1E+016 KP = 48.89 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 8.203E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 2.926E-010 N = 1.193 RS = 0.001056 BV = 55 CJO = 8.778E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH4011SK3 Spice Model v1.0 Last Revised 2015/06/05 *---------- DMN6069SFG Spice Model ---------- .SUBCKT DMN6069SFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.03539 RS 30 3 1E-008 RG 20 2 2.16 CGS 2 3 7.47E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.1E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.641 + TOX = 6E-008 NSUB = 1E+016 KP = 36.47 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 2.225E-010 VJ = 0.3984 M = 0.4935 .MODEL DSUB D IS = 2.365E-010 N = 1.257 RS = 0.006622 BV = 72 CJO = 2.225E-010 VJ = 0.1191 M = 0.564 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN6069SFG Spice Model v1.0 Last Revised 2015/8/03 *DIODES_INC_SPICE_MODEL DMN61D8LQ N-channel MOSFET *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=24/08/2015 *VERSION=1 "**Pin order: Drain=10, Gate=50, Source=30" .SUBCKT DMN61D8LQ 10 50 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 1.02 RS 23 3 Rmod1 .08 RG 20 22 50 RIN 20 23 2E11 RDS 10 23 6E9 CGS 2 3 30E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 40E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 0.022 LS 30 23 1n *ESD and Clamp structures Dclamp1 10 55 Dclamp Dclamp2 20 55 Dclamp Desd1 20 60 DESD Desd2 30 60 DESD RgateS 50 20 5.5K RgateP 50 30 100K Desd3 50 40 DESD Desd4 30 40 DESD .MODEL Nmod1 NMOS (LEVEL=3 VTO=1.65 TOX=4.1E-8 NSUB=2E+17 KP=2 NFS=1E+10 IS=1E-15 N=10) .MODEL DCGD D (CJO =30E-12 VJ = 0.5 M = 0.43 T_ABS=25) .MODEL DSUB D (IS = 2E-13 N=1 RS=0.06 BV=80 IKF=50m CJO=100E-12 VJ=0.42 M=0.5 TT=11E-9 TRS1=1E-3 EG=1.09) .MODEL DLIM D (IS=100U N=1 T_ABS=25) .MODEL Rmod1 RES (TC1=.05e-3 TC2=12E-6) *ESD and CLAMP DIoDES .model DESD D(IS=.150f RS=1m BV=12 Ibv=10u) .model Dclamp D(IS=.160f RS=1m BV=60 Ibv=10u) .ENDS * (c) 2015 Diodes Inc * * The copyright in these models and the designs embodied belong "* to Diodes Incorporated ("" Zetex ""). They are supplied" * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability "* in respect of any use is accepted by Diodes Incorporated, its distributors" * or agents. * "* Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton," "* Oldham, United Kingdom, OL9 9LL" * *DIODES_INC_SPICE_MODEL DMN61D8L N-channel MOSFET *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=24/08/2015 *VERSION=1 **Pin order: Drain=10, Gate=50, Source=30 .SUBCKT DMN61D8L 10 50 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 1.02 RS 23 3 Rmod1 .08 RG 20 22 50 RIN 20 23 2E11 RDS 10 23 6E9 CGS 2 3 30E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 40E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 0.022 LS 30 23 1n *ESD and Clamp structures Dclamp1 10 55 Dclamp Dclamp2 20 55 Dclamp Desd1 20 60 DESD Desd2 30 60 DESD RgateS 50 20 5.5K RgateP 50 30 100K Desd3 50 40 DESD Desd4 30 40 DESD .MODEL Nmod1 NMOS (LEVEL=3 VTO=1.65 TOX=4.1E-8 NSUB=2E+17 KP=2 NFS=1E+10 IS=1E-15 N=10) .MODEL DCGD D (CJO =30E-12 VJ = 0.5 M = 0.43 T_ABS=25) .MODEL DSUB D (IS = 2E-13 N=1 RS=0.06 BV=80 IKF=50m CJO=100E-12 VJ=0.42 M=0.5 TT=11E-9 TRS1=1E-3 EG=1.09) .MODEL DLIM D (IS=100U N=1 T_ABS=25) .MODEL Rmod1 RES (TC1=.05e-3 TC2=12E-6) *ESD and CLAMP DIoDES .model DESD D(IS=.150f RS=1m BV=12 Ibv=10u) .model Dclamp D(IS=.160f RS=1m BV=60 Ibv=10u) .ENDS * (c) 2015 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *---------- DMT6004LPS Spice Model ---------- .SUBCKT DMT6004LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0001798 RS 30 3 0.001659 RG 20 2 0.64 CGS 2 3 4.923E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.7E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.095 + TOX = 6E-008 NSUB = 1E+016 KP = 287.2 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 1.864E-009 VJ = 1 M = 0.7538 .MODEL DSUB D IS = 1.026E-008 N = 1.357 RS = 4.441E-010 BV = 65 CJO = 3E-009 VJ = 0.8 M = 0.3 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT6004LPS Spice Model v1.0 Last Revised 2015/6/5 *---------- DMTH4004SPSQ Spice Model ---------- .SUBCKT DMTH4004SPSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001299 RS 30 3 0.001 RG 20 2 0.77 CGS 2 3 4.614E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.5E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.189 + TOX = 6E-008 NSUB = 1E+016 KP = 66.04 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 5.071E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 9.177E-009 N = 1.352 RS = 9.544E-005 BV = 50 CJO = 6.893E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4004SPSQ Spice Model v2.0 Last Revised 2015/11/16 *---------- DMNH4006SK3 Spice Model ---------- .SUBCKT DMNH4006SK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001 RS 30 3 0.001 RG 20 2 1.7 CGS 2 3 2.157E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.15 + TOX = 6E-008 NSUB = 1E+016 KP = 47.64 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.275E-009 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.252E-010 N = 1.153 RS = 0.001541 BV = 40 CJO = 1.897E-009 VJ = 0.7999 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4006SK3 Spice Model v1.0 Last Revised 2015/9/10 *---------- DMTH6010LK3 Spice Model ---------- .SUBCKT DMTH6010LK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004229 RS 30 3 0.001 RG 20 2 0.59 CGS 2 3 2.15E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.58E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.161 + TOX = 6E-008 NSUB = 1E+016 KP = 161.3 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 9.443E-010 VJ = 1 M = 0.9231 .MODEL DSUB D IS = 3.582E-010 N = 1.161 RS = 0.004476 BV = 72.8 CJO = 1.69E-009 VJ = 1 M = 0.9352 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6010LK3 Spice Model v1.0 Last Revised 2015/6/15 *---------- DMTH6004SPS Spice Model ---------- .SUBCKT DMTH6004SPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001226 RS 30 3 1E-008 RG 20 2 0.66 CGS 2 3 4.957E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.8E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.661 + TOX = 6E-008 NSUB = 1E+016 KP = 76.21 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 1.182E-009 VJ = 1 M = 0.6256 .MODEL DSUB D IS = 5.527E-010 N = 1.203 RS = 0.002268 BV = 64 CJO = 2.894E-009 VJ = 1 M = 0.2266 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6004SPS Spice Model v1.0 Last Revised 2015/10/01 *---------- DMTH6010LPS Spice Model ---------- .SUBCKT DMTH6010LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004229 RS 30 3 0.001 RG 20 2 0.59 CGS 2 3 2.15E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.58E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.161 + TOX = 6E-008 NSUB = 1E+016 KP = 161.3 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 9.443E-010 VJ = 1 M = 0.9231 .MODEL DSUB D IS = 3.582E-010 N = 1.161 RS = 0.004476 BV = 72.8 CJO = 1.69E-009 VJ = 1 M = 0.9352 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6010LPS Spice Model v1.0 Last Revised 2015/6/15 *---------- DMTH6004SCTB Spice Model ---------- .SUBCKT DMTH6004SCTB 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001226 RS 30 3 1E-008 RG 20 2 0.66 CGS 2 3 4.957E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.8E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.661 + TOX = 6E-008 NSUB = 1E+016 KP = 76.21 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 1.182E-009 VJ = 1 M = 0.6256 .MODEL DSUB D IS = 5.527E-010 N = 1.203 RS = 0.002268 BV = 64 CJO = 2.894E-009 VJ = 1 M = 0.2266 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6004SCTB Spice Model v1.0 Last Revised 2015/10/01 ---------- DMTH4007SPS Spice Model ---------- .SUBCKT DMTH4007SPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.002288 RS 30 3 0.001 RG 20 2 0.46 CGS 2 3 2.042E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.7E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.513 + TOX = 6E-008 NSUB = 1E+016 KP = 100 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 1.098E-009 VJ = 1 M = 0.9231 .MODEL DSUB D IS = 2.333E-010 N = 1.213 RS = 0.0009699 BV = 72.8 CJO = 1.33E-009 VJ = 1 M = 0.1934 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4007SPS Spice Model v1.0 Last Revised 2015/6/15 *---------- DMT6009LK3 Spice Model ---------- .SUBCKT DMT6009LK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.006099 RS 30 3 1E-008 RG 20 2 1.71 CGS 2 3 2.016E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.086 + TOX = 6E-008 NSUB = 1E+016 KP = 136.4 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 4.367E-010 VJ = 1 M = 0.5797 .MODEL DSUB D IS = 2.239E-010 N = 1.183 RS = 0.005972 BV = 67 CJO = 8.953E-010 VJ = 1 M = 0.201 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT6009LK3 Spice Model v1.0 Last Revised 2015/7/27 *---------- DMT6015LPS Spice Model ---------- .SUBCKT DMT6015LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.008244 RS 30 3 0.001 RG 20 2 1.48 CGS 2 3 1.107E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.997 + TOX = 6E-008 NSUB = 1E+016 KP = 40.42 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.204E-010 VJ = 0.8 M = 0.6777 .MODEL DSUB D IS = 1.257E-009 N = 1.322 RS = 0.005675 BV = 60 CJO = 5.719E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT6015LPS Spice Model v1.0 Last Revised 2015/10/27 *DIODES_INC_SPICE_MODEL DMN61D8LVTQ N-channel MOSFET *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=24/08/2015 *VERSION=1 "**Pin order: Drain=10, Gate=50, Source=30" .SUBCKT DMN61D8LVTQ 10 50 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 1.02 RS 23 3 Rmod1 .08 RG 20 22 50 RIN 20 23 2E11 RDS 10 23 6E9 CGS 2 3 30E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 40E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 0.022 LS 30 23 1n *ESD and Clamp structures Dclamp1 10 55 Dclamp Dclamp2 20 55 Dclamp Desd1 20 60 DESD Desd2 30 60 DESD RgateS 50 20 5.5K RgateP 50 30 100K Desd3 50 40 DESD Desd4 30 40 DESD .MODEL Nmod1 NMOS (LEVEL=3 VTO=1.65 TOX=4.1E-8 NSUB=2E+17 KP=2 NFS=1E+10 IS=1E-15 N=10) .MODEL DCGD D (CJO =30E-12 VJ = 0.5 M = 0.43 T_ABS=25) .MODEL DSUB D (IS = 2E-13 N=1 RS=0.06 BV=80 IKF=50m CJO=100E-12 VJ=0.42 M=0.5 TT=11E-9 TRS1=1E-3 EG=1.09) .MODEL DLIM D (IS=100U N=1 T_ABS=25) .MODEL Rmod1 RES (TC1=.05e-3 TC2=12E-6) *ESD and CLAMP DIoDES .model DESD D(IS=.150f RS=1m BV=12 Ibv=10u) .model Dclamp D(IS=.160f RS=1m BV=60 Ibv=10u) .ENDS * (c) 2015 Diodes Inc * * The copyright in these models and the designs embodied belong "* to Diodes Incorporated ("" Zetex ""). They are supplied" * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability "* in respect of any use is accepted by Diodes Incorporated, its distributors" * or agents. * "* Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton," "* Oldham, United Kingdom, OL9 9LL" * *---------- DMTH4005SPSQ Spice Model ---------- .SUBCKT DMTH4005SPSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 9.814E-005 RS 30 3 0.001 RG 20 2 0.67 CGS 2 3 2.961E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.3E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.117 + TOX = 6E-008 NSUB = 1E+016 KP = 46.39 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.053E-009 VJ = 0.8 M = 0.6001 .MODEL DSUB D IS = 1.159E-009 N = 1.284 RS = 0.0003205 BV = 40 CJO = 1.784E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4005SPSQ Spice Model v1.0 Last Revised 2015/8/19 *---------- DMTH6005LPSQ Spice Model ---------- .SUBCKT DMTH6005LPSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.003586 RS 30 3 1E-008 RG 20 2 0.66 CGS 2 3 3.195E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.3E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.272 + TOX = 6E-008 NSUB = 1E+016 KP = 222.2 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 5.577E-010 VJ = 1 M = 0.9082 .MODEL DSUB D IS = 4.976E-010 N = 1.224 RS = 0.001644 BV = 70 CJO = 2.885E-009 VJ = 1 M = 0.9133 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6005LPSQ Spice Model v1.0 Last Revised 2015/11/10 ---------- DMTH4007SPSQ Spice Model ---------- .SUBCKT DMTH4007SPSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.002288 RS 30 3 0.001 RG 20 2 0.46 CGS 2 3 2.042E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.7E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.513 + TOX = 6E-008 NSUB = 1E+016 KP = 100 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 1.098E-009 VJ = 1 M = 0.9231 .MODEL DSUB D IS = 2.333E-010 N = 1.213 RS = 0.0009699 BV = 72.8 CJO = 1.33E-009 VJ = 1 M = 0.1934 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4007SPSQ Spice Model v1.0 Last Revised 2015/11/12 *---------- DMT6009LSS Spice Model ---------- .SUBCKT DMT6009LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.006099 RS 30 3 1E-008 RG 20 2 1.71 CGS 2 3 2.016E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.086 + TOX = 6E-008 NSUB = 1E+016 KP = 136.4 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 4.367E-010 VJ = 1 M = 0.5797 .MODEL DSUB D IS = 2.239E-010 N = 1.183 RS = 0.005972 BV = 67 CJO = 8.953E-010 VJ = 1 M = 0.201 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT6009LSS Spice Model v1.0 Last Revised 2015/10/22 *---------- DMN61D9UDW Spice Model ---------- .SUBCKT DMN61D9UDW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.449 RS 30 3 0.001 RG 20 2 127 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 2.688E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001583 VTO = 1.189 TOX = 6E-008 NSUB = 1E+016 KP = 1.163 U0 = 400 KAPPA = 14.08 .MODEL DCGD D CJO = 1.808E-011 VJ = 0.134 M = 0.369 .MODEL DSUB D IS = 247.6E-9 N = 1.566 RS = 0.358 EG = 0.06341 XTI = 8.194 + TNOM = 217.5 BV = 70 CJO = 2.877E-012 VJ = 1.307E-009 M = 0.03355 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS = 2.728E-008 N = 66.22 BV = 5.068 .ENDs *Diodes DMN61D9UDW Spice Model v1.0 Last Revised 2015/7/3 *---------- DMN61D9U Spice Model ---------- .SUBCKT DMN61D9U 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.449 RS 30 3 0.001 RG 20 2 127 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 2.688E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001583 VTO = 1.189 TOX = 6E-008 NSUB = 1E+016 KP = 1.163 U0 = 400 KAPPA = 14.08 .MODEL DCGD D CJO = 1.808E-011 VJ = 0.134 M = 0.369 .MODEL DSUB D IS = 247.6E-9 N = 1.566 RS = 0.358 EG = 0.06341 XTI = 8.194 + TNOM = 217.5 BV = 70 CJO = 2.877E-012 VJ = 1.307E-009 M = 0.03355 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS = 2.728E-008 N = 66.22 BV = 5.068 .ENDs *Diodes DMN61D9U Spice Model v1.0 Last Revised 2015/7/3 *---------- DMTH6005LPS Spice Model ---------- .SUBCKT DMTH6005LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.003586 RS 30 3 1E-008 RG 20 2 0.66 CGS 2 3 3.195E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.3E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.272 + TOX = 6E-008 NSUB = 1E+016 KP = 222.2 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 5.577E-010 VJ = 1 M = 0.9082 .MODEL DSUB D IS = 4.976E-010 N = 1.224 RS = 0.001644 BV = 70 CJO = 2.885E-009 VJ = 1 M = 0.9133 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6005LPS Spice Model v1.0 Last Revised 2015/8/17 *---------- DMTH6004SCTBQ Spice Model ---------- .SUBCKT DMTH6004SCTBQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001226 RS 30 3 1E-008 RG 20 2 0.66 CGS 2 3 4.957E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.8E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.661 + TOX = 6E-008 NSUB = 1E+016 KP = 76.21 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 1.182E-009 VJ = 1 M = 0.6256 .MODEL DSUB D IS = 5.527E-010 N = 1.203 RS = 0.002268 BV = 64 CJO = 2.894E-009 VJ = 1 M = 0.2266 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6004SCTBQ Spice Model v1.0 Last Revised 2015/10/01 *---------- DMN63D1LDW Spice Model ---------- .SUBCKT DMN63D1LDW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.631 RS 30 3 0.001 RG 20 2 133 CGS 2 3 2.711E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.628E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0 VTO = 1.596 + TOX = 6E-008 NSUB = 1.945E+017 KP = 1.196 KAPPA = 1E-015 U0 = 400 THETA = 5.648E-007 .MODEL DCGD D CJO = 2.628E-011 VJ = 0.6 M = 0.2561 .MODEL DSUB D IS = 2.05E-009 N = 1.698 RS = 0.1282 BV = 65 CJO = 6.226E-012 VJ = 1 M = 0.6474 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN63D1LDW Spice Model v1.0 Last Revised 2015/7/1 *---------- DMN67D8LDW Spice Model ---------- .SUBCKT DMN67D8L 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.764 RS 30 3 0.001 RG 20 2 120 CGS 2 3 1.982E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.95E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.951 + TOX = 6E-008 NSUB = 1E+016 KP = 0.3344 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.046E-011 VJ = 0.2615 M = 0.3137 .MODEL DSUB D IS = 6.246E-010 N = 1.568 RS = 0.1544 BV = 75 CJO = 9.897E-012 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN67D8LDW Spice Model v1.0 Last Revised 2015/7/14 *---------- DMN67D8LW Spice Model ---------- .SUBCKT DMN67D8L 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.764 RS 30 3 0.001 RG 20 2 120 CGS 2 3 1.982E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.95E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.951 + TOX = 6E-008 NSUB = 1E+016 KP = 0.3344 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.046E-011 VJ = 0.2615 M = 0.3137 .MODEL DSUB D IS = 6.246E-010 N = 1.568 RS = 0.1544 BV = 75 CJO = 9.897E-012 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN67D8LW Spice Model v1.0 Last Revised 2015/7/14 *---------- DMN62D0U Spice Model ---------- .SUBCKT DMN62D0U 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.631 RS 30 3 0.001 RG 20 2 133 CGS 2 3 2.79E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.4E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0 VTO = 1.596 + TOX = 6E-008 NSUB = 1.945E+017 KP = 1.196 KAPPA = 1E-015 U0 = 400 THETA = 5.648E-007 .MODEL DCGD D CJO = 1.283E-011 VJ = 0.6 M = 0.4065 .MODEL DSUB D IS = 2.05E-009 N = 1.698 RS = 0.1282 BV = 65 CJO = 8.365E-012 VJ = 0.7198 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN62D0U Spice Model v1.0 Last Revised 2015/7/3 *---------- DMN62D0UW Spice Model ---------- .SUBCKT DMN62D0UW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.631 RS 30 3 0.001 RG 20 2 133 CGS 2 3 2.79E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.4E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0 VTO = 1.596 + TOX = 6E-008 NSUB = 1.945E+017 KP = 1.196 KAPPA = 1E-015 U0 = 400 THETA = 5.648E-007 .MODEL DCGD D CJO = 1.283E-011 VJ = 0.6 M = 0.4065 .MODEL DSUB D IS = 2.05E-009 N = 1.698 RS = 0.1282 BV = 65 CJO = 8.365E-012 VJ = 0.7198 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN62D0UW Spice Model v1.0 Last Revised 2015/7/3 *---------- DMN62D0UDW Spice Model ---------- .SUBCKT DMN62D0UDW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.631 RS 30 3 0.001 RG 20 2 133 CGS 2 3 2.79E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.4E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0 VTO = 1.596 + TOX = 6E-008 NSUB = 1.945E+017 KP = 1.196 KAPPA = 1E-015 U0 = 400 THETA = 5.648E-007 .MODEL DCGD D CJO = 1.283E-011 VJ = 0.6 M = 0.4065 .MODEL DSUB D IS = 2.05E-009 N = 1.698 RS = 0.1282 BV = 65 CJO = 8.365E-012 VJ = 0.7198 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN62D0UDW Spice Model v1.0 Last Revised 2015/7/3 *---------- 2N7002H Spice Model ---------- .SUBCKT 2N7002H 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1977 RS 30 3 0.001 RG 20 2 134.6 CGS 2 3 2.532E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.072 + TOX = 6E-008 NSUB = 1E+016 KP = 0.3271 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 1.33E-010 VJ = 0.1 M = 0.9638 .MODEL DSUB D IS = 2.229E-010 N = 1.639 RS = 0.7641 BV = 86.7 CJO = 1.164E-012 VJ = 0.1038 M = 0.4732 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes 2N7002H Spice Model v1.0 Last Revised 2015/6/29 *---------- DMTH6010LPSQ Spice Model ---------- .SUBCKT DMTH6010LPSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004229 RS 30 3 0.001 RG 20 2 0.59 CGS 2 3 2.15E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.58E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.161 + TOX = 6E-008 NSUB = 1E+016 KP = 161.3 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 9.443E-010 VJ = 1 M = 0.9231 .MODEL DSUB D IS = 3.582E-010 N = 1.161 RS = 0.004476 BV = 72.8 CJO = 1.69E-009 VJ = 1 M = 0.9352 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6010LPSQ Spice Model v1.0 Last Revised 2015/11/10 *---------- DMTH8012LK3Q Spice Model ---------- .SUBCKT DMTH8012LK3Q 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01093 RS 30 3 0.001 RG 20 2 0.68 CGS 2 3 2.125E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.22 + TOX = 6E-008 NSUB = 1E+016 KP = 83.45 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 2.852E-010 VJ = 0.9 M = 0.5564 .MODEL DSUB D IS = 2.326E-010 N = 1.19 RS = 0.00327 BV = 90 CJO = 1.422E-009 VJ = 0.8 M = 0.3738 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH8012LK3Q Spice Model v1.0 Last Revised 2015/11/13 *---------- DMTH4004SPS Spice Model ---------- .SUBCKT DMTH4004SPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001299 RS 30 3 0.001 RG 20 2 0.77 CGS 2 3 4.614E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.5E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.189 + TOX = 6E-008 NSUB = 1E+016 KP = 66.04 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 5.071E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 9.177E-009 N = 1.352 RS = 9.544E-005 BV = 50 CJO = 6.893E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4004SPS Spice Model v1.0 Last Revised 2015/10/1 *---------- DMN61D9UW Spice Model ---------- .SUBCKT DMN61D9UW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.449 RS 30 3 0.001 RG 20 2 127 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 2.688E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001583 VTO = 1.189 TOX = 6E-008 NSUB = 1E+016 KP = 1.163 U0 = 400 KAPPA = 14.08 .MODEL DCGD D CJO = 1.808E-011 VJ = 0.134 M = 0.369 .MODEL DSUB D IS = 247.6E-9 N = 1.566 RS = 0.358 EG = 0.06341 XTI = 8.194 + TNOM = 217.5 BV = 70 CJO = 2.877E-012 VJ = 1.307E-009 M = 0.03355 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS = 2.728E-008 N = 66.22 BV = 5.068 .ENDs *Diodes DMN61D9UW Spice Model v1.0 Last Revised 2015/7/3 *---------- DMTH4004SCTB Spice Model ---------- .SUBCKT DMTH4004SCTB 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001299 RS 30 3 0.001 RG 20 2 0.77 CGS 2 3 4.614E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.5E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.189 + TOX = 6E-008 NSUB = 1E+016 KP = 66.04 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 5.071E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 9.177E-009 N = 1.352 RS = 9.544E-005 BV = 50 CJO = 6.893E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4004SCTB Spice Model v1.0 Last Revised 2015/10/1 *---------- DMT6010LSS Spice Model ---------- .SUBCKT DMT6010LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.003535 RS 30 3 0.001 RG 20 2 0.6 CGS 2 3 2.137E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.6E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.01616 VTO = 2.226 + TOX = 6E-008 NSUB = 1E+016 KP = 85.27 U0 = 400 KAPPA = 38.28 .MODEL DCGD D CJO = 7.629E-010 VJ = 2.052 M = 1.442 .MODEL DSUB D IS = 3.784E-010 N = 1.165 RS = 0.004441 + BV = 65 CJO = 1.489E-009 VJ = 2.873 M = 0.3016 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNT6010LSS Spice Model v1.0 Last Revised 2013/9/9 *---------- DMTH4007LPSQ Spice Model ---------- .SUBCKT DMTH4007LPSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.002855 RS 30 3 0.001 RG 20 2 0.62 CGS 2 3 2.005E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.997 + TOX = 6E-008 NSUB = 1E+016 KP = 74.74 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.614E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 3.75E-010 N = 1.163 RS = 0.004456 BV = 40 CJO = 1.695E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4007LPSQ Spice Model v1.0 Last Revised 2015/8/19 *---------- DMT6007LFG Spice Model ---------- .SUBCKT DMT6007LFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001863 RS 30 3 0.001 RG 20 2 0.59 CGS 2 3 2.146E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.6E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.341 + TOX = 6E-008 NSUB = 1E+016 KP = 111 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 8.665E-010 VJ = 0.8 M = 0.7124 .MODEL DSUB D IS = 2.3E-010 N = 1.161 RS = 0.002386 BV = 60 CJO = 3E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT6007LFG Spice Model v1.0 Last Revised 2015/11/18 *---------- DMTH4004SCTBQ Spice Model ---------- .SUBCKT DMTH4004SCTBQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001299 RS 30 3 0.001 RG 20 2 0.77 CGS 2 3 4.614E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.5E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.189 + TOX = 6E-008 NSUB = 1E+016 KP = 66.04 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 5.071E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 9.177E-009 N = 1.352 RS = 9.544E-005 BV = 50 CJO = 6.893E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4004SCTBQ Spice Model v1.0 Last Revised 2015/11/13 *---------- DMTH6010LK3Q Spice Model ---------- .SUBCKT DMTH6010LK3Q 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004229 RS 30 3 0.001 RG 20 2 0.59 CGS 2 3 2.15E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.58E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.161 + TOX = 6E-008 NSUB = 1E+016 KP = 161.3 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 9.443E-010 VJ = 1 M = 0.9231 .MODEL DSUB D IS = 3.582E-010 N = 1.161 RS = 0.004476 BV = 72.8 CJO = 1.69E-009 VJ = 1 M = 0.9352 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6010LK3Q Spice Model v1.0 Last Revised 2015/11/10 *---------- DMTH4007SPDQ Spice Model ---------- .SUBCKT DMTH4007SPDQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005581 RS 30 3 1E-008 RG 20 2 0.42 CGS 2 3 2.083E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.45E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.54 + TOX = 6E-008 NSUB = 1E+016 KP = 75.2 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 9.398E-010 VJ = 1 M = 0.9082 .MODEL DSUB D IS = 2.675E-010 N = 1.232 RS = 0.005279 BV = 66 CJO = 2.502E-009 VJ = 1 M = 0.9133 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4007SPDQ Spice Model v1.0 Last Revised 2015/11/13 *---------- DMNH4011SK3Q Spice Model ---------- .SUBCKT DMNH4011SK3Q 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004592 RS 30 3 0.001 RG 20 2 2.19 CGS 2 3 1.266E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.749 + TOX = 6E-008 NSUB = 1E+016 KP = 48.89 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 8.203E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 2.926E-010 N = 1.193 RS = 0.001056 BV = 55 CJO = 8.778E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH4011SK3Q Spice Model v1.0 Last Revised 2015/11/13 *SRC=DMN5L06DMK;DI_DMN5L06DMK;MOSFETs N;Enh;50.0V 0.280A 2.00ohms Diodes Inc. N Channel MOSFET .MODEL DI_DMN5L06DMK NMOS( LEVEL=1 VTO=1.20 KP=0.200 GAMMA=1.49 + PHI=.75 LAMBDA=117u RD=0.280 RS=0.280 + IS=140f PB=0.800 MJ=0.460 CBD=98.8p + CBS=119p CGSO=60.0n CGDO=50.0n CGBO=390n ) * -- Assumes default L=100U W=100U -- *SRC=DMN5L06DMK;DI_DMN5L06DMK;MOSFETs N;Enh;50.0V 0.280A 2.00ohms Diodes Inc. N Channel MOSFET .MODEL DI_DMN5L06DMK NMOS( LEVEL=1 VTO=1.20 KP=0.200 GAMMA=1.49 + PHI=.75 LAMBDA=117u RD=0.280 RS=0.280 + IS=140f PB=0.800 MJ=0.460 CBD=98.8p + CBS=119p CGSO=60.0n CGDO=50.0n CGBO=390n ) * -- Assumes default L=100U W=100U -- *---------- DMTH6004SPSQ Spice Model ---------- .SUBCKT DMTH6004SPSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001226 RS 30 3 1E-008 RG 20 2 0.66 CGS 2 3 4.957E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.8E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.661 + TOX = 6E-008 NSUB = 1E+016 KP = 76.21 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 1.182E-009 VJ = 1 M = 0.6256 .MODEL DSUB D IS = 5.527E-010 N = 1.203 RS = 0.002268 BV = 64 CJO = 2.894E-009 VJ = 1 M = 0.2266 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6004SPSQ Spice Model v1.0 Last Revised 2015/10/01 *---------- DMT69M8LSS Spice Model ---------- .SUBCKT DMT69M8LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.006099 RS 30 3 1E-008 RG 20 2 1.71 CGS 2 3 2.016E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.086 + TOX = 6E-008 NSUB = 1E+016 KP = 136.4 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 4.367E-010 VJ = 1 M = 0.5797 .MODEL DSUB D IS = 2.239E-010 N = 1.183 RS = 0.005972 BV = 67 CJO = 8.953E-010 VJ = 1 M = 0.201 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT69M8LSS Spice Model v1.0 Last Revised 2015/10/22 *---------- DMT5015LFDF Spice Model ---------- .SUBCKT DMT5015LFDF 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.008659 RS 30 3 0.001 RG 20 2 1.9 CGS 2 3 9.188E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.916 + TOX = 6E-008 NSUB = 1E+016 KP = 47.24 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.116E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 4.682E-010 N = 1.238 RS = 0.007384 BV = 50 CJO = 7.542E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT5015LFDF Spice Model v1.0 Last Revised 2015/12/15 *---------- DMTH4004LK3 Spice Model ---------- .SUBCKT DMTH4004LK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0006761 RS 30 3 0.001 RG 20 2 0.66 CGS 2 3 4.581E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.5E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.369 + TOX = 6E-008 NSUB = 1E+016 KP = 208.7 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 5.071E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.691E-008 N = 1.354 RS = 0.0001471 BV = 40 CJO = 6.893E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4004LK3 Spice Model v1.0 Last Revised 2015/12/15 *---------- DMN4026SK3 Spice Model ---------- .SUBCKT DMN4026SK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007676 RS 30 3 0.001 RG 20 2 1.5 CGS 2 3 1.176E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.129 + TOX = 6E-008 NSUB = 1E+016 KP = 40 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.925E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.232E-010 N = 1.234 RS = 0.004374 BV = 48 CJO = 2.224E-010 VJ = 0.7963 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN4026SK3 Spice Model v1.0 Last Revised 2015/6/17 *---------- DMN6040SVTQ Spice Model ---------- .SUBCKT DMN6040SVTQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02611 RS 30 3 0.001 RG 20 2 1.18 CGS 2 3 1.277E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.01616 VTO = 2.642 + TOX = 6E-008 NSUB = 1E+016 KP = 47.18 U0 = 400 KAPPA = 1 .MODEL DCGD D CJO = 3.638E-010 VJ = 0.3003 M = 0.4785 .MODEL DSUB D IS = 1.146E-011 N = 1.109 RS = 0.008602 BV = 65 CJO = 1.445E-010 VJ = 0.3616 M = 0.5674 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN6040SVTQ Spice Model v1.0 Last Revised 2015/12/23 *---------- DMN6040SSDQ Spice Model ---------- .SUBCKT DMN6040SSDQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02611 RS 30 3 0.001 RG 20 2 1.18 CGS 2 3 1.277E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.01616 VTO = 2.642 + TOX = 6E-008 NSUB = 1E+016 KP = 47.18 U0 = 400 KAPPA = 1 .MODEL DCGD D CJO = 3.638E-010 VJ = 0.3003 M = 0.4785 .MODEL DSUB D IS = 1.146E-011 N = 1.109 RS = 0.008602 BV = 65 CJO = 1.445E-010 VJ = 0.3616 M = 0.5674 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN6040SSDQ Spice Model v1.0 Last Revised 2015/12/23 *---------- DMN53D0LQ Spice Model ---------- .SUBCKT DMN53D0LQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.6021 RS 30 3 0.001 RG 20 2 29.9 CGS 2 3 5E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.8E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.411 + TOX = 6E-008 NSUB = 1E+016 KP = 1.08 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.516E-011 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 4.736E-009 N = 1.687 RS = 0.2132 BV = 50 CJO = 2.22E-010 VJ = 0.1 M = 0.7932 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN53D0LQ Spice Model v1.0 Last Revised 2015/01/05 *---------- DMTH6004LPS Spice Model ---------- .SUBCKT DMTH6004LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0001798 RS 30 3 0.001659 RG 20 2 0.64 CGS 2 3 4.923E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.7E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.095 + TOX = 6E-008 NSUB = 1E+016 KP = 287.2 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 1.864E-009 VJ = 1 M = 0.7538 .MODEL DSUB D IS = 1.026E-008 N = 1.357 RS = 4.441E-010 BV = 65 CJO = 3E-009 VJ = 0.8 M = 0.3 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6004LPS Spice Model v1.0 Last Revised 2015/6/5 *---------- DMN601VKQ Spice Model ---------- .SUBCKT DMN601VKQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.631 RS 30 3 0.001 RG 20 2 133 CGS 2 3 2.711E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.628E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0 VTO = 1.596 + TOX = 6E-008 NSUB = 1.945E+017 KP = 1.196 KAPPA = 1E-015 U0 = 400 THETA = 5.648E-007 .MODEL DCGD D CJO = 2.628E-011 VJ = 0.6 M = 0.2561 .MODEL DSUB D IS = 2.05E-009 N = 1.698 RS = 0.1282 BV = 65 CJO = 6.226E-012 VJ = 1 M = 0.6474 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN601VKQ Spice Model v1.0 Last Revised 2016/1/13 *---------- DMN601WKQ Spice Model ---------- .SUBCKT DMN601WKQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1 RS 30 3 0.001 RG 20 2 1.48 CGS 2 3 2.8E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.027 + TOX = 6E-008 NSUB = 1E+016 KP = 0.6294 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.368E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.273E-010 N = 1.499 RS = 0.1514 BV = 60 CJO = 2E-011 VJ = 0.6 M = 0.7751 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN601WKQ Spice Model v1.0 Last Revised 2016/01/07 *---------- 2N7002 Spice Model ---------- .SUBCKT N7002 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.976 RS 30 3 0.001 RG 20 2 160.6 CGS 2 3 2E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.9E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0 VTO = 2.154 + TOX = 6E-008 NSUB = 1E+016 KP = 0.4654 KAPPA = 1E-015 U0 = 400 .MODEL DCGD D CJO = 1.2E-011 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 6.808E-010 N = 1.576 RS = 0.1408 BV = 72 CJO = 8E-012 VJ = 0.8 M = 0.6474 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes N7002 Spice Model v0 Last Revised 2017/2/9 *---------- DMTH4004SK3 Spice Model ---------- .SUBCKT DMTH4004SK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001299 RS 30 3 0.001 RG 20 2 0.77 CGS 2 3 4.614E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.5E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.189 + TOX = 6E-008 NSUB = 1E+016 KP = 66.04 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 5.071E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 9.177E-009 N = 1.352 RS = 9.544E-005 BV = 50 CJO = 6.893E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4004SK3 Spice Model v1.0 Last Revised 2015/11/20 *---------- DMTH6004SCT Spice Model ---------- .SUBCKT DMTH6004SCT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001226 RS 30 3 1E-008 RG 20 2 0.66 CGS 2 3 4.957E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.8E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.661 + TOX = 6E-008 NSUB = 1E+016 KP = 76.21 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 1.182E-009 VJ = 1 M = 0.6256 .MODEL DSUB D IS = 5.527E-010 N = 1.203 RS = 0.002268 BV = 64 CJO = 2.894E-009 VJ = 1 M = 0.2266 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6004SCT Spice Model v1.0M Last Revised 2016/2/18 *---------- DMTH6005LK3 Spice Model ---------- .SUBCKT DMTH6005LK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.003586 RS 30 3 1E-008 RG 20 2 0.66 CGS 2 3 3.195E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.3E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.272 + TOX = 6E-008 NSUB = 1E+016 KP = 222.2 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 5.577E-010 VJ = 1 M = 0.9082 .MODEL DSUB D IS = 4.976E-010 N = 1.224 RS = 0.001644 BV = 70 CJO = 2.885E-009 VJ = 1 M = 0.9133 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6005LK3 Spice Model v1.0M Last Revised 2016/2/22 *---------- 2N7002VAC Spice Model ---------- .SUBCKT 2N7002VAC 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.764 RS 30 3 0.001 RG 20 2 120 CGS 2 3 1.982E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.95E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.951 + TOX = 6E-008 NSUB = 1E+016 KP = 0.3344 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.046E-011 VJ = 0.2615 M = 0.3137 .MODEL DSUB D IS = 6.246E-010 N = 1.568 RS = 0.1544 BV = 75 CJO = 9.897E-012 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes 2N7002VAC Spice Model v1.0M Last Revised 2016/2/23 *---------- 2N7002VC Spice Model ---------- .SUBCKT 2N7002VC 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.764 RS 30 3 0.001 RG 20 2 120 CGS 2 3 1.982E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.95E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.951 + TOX = 6E-008 NSUB = 1E+016 KP = 0.3344 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.046E-011 VJ = 0.2615 M = 0.3137 .MODEL DSUB D IS = 6.246E-010 N = 1.568 RS = 0.1544 BV = 75 CJO = 9.897E-012 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes 2N7002VC Spice Model v1.0M Last Revised 2016/2/23 *---------- MMBF170Q Spice Model ---------- .SUBCKT MMBF170Q 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.764 RS 30 3 0.001 RG 20 2 120 CGS 2 3 1.982E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.95E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.951 + TOX = 6E-008 NSUB = 1E+016 KP = 0.3344 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.046E-011 VJ = 0.2615 M = 0.3137 .MODEL DSUB D IS = 6.246E-010 N = 1.568 RS = 0.1544 BV = 75 CJO = 9.897E-012 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes MMBF170Q Spice Model v1.0M Last Revised 2016/3/7 *---------- DMTH4005SK3 Spice Model ---------- .SUBCKT DMTH4005SK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 9.814E-005 RS 30 3 0.001 RG 20 2 0.67 CGS 2 3 2.961E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.3E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.117 + TOX = 6E-008 NSUB = 1E+016 KP = 46.39 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.053E-009 VJ = 0.8 M = 0.6001 .MODEL DSUB D IS = 1.159E-009 N = 1.284 RS = 0.0003205 BV = 40 CJO = 1.784E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4005SK3 Spice Model v1.0M Last Revised 2016/3/8 *---------- DMTH4004LK3Q Spice Model ---------- .SUBCKT DMTH4004LK3Q 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0006761 RS 30 3 0.001 RG 20 2 0.66 CGS 2 3 4.581E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.5E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.369 + TOX = 6E-008 NSUB = 1E+016 KP = 208.7 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 5.071E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.691E-008 N = 1.354 RS = 0.0001471 BV = 40 CJO = 6.893E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4004LK3Q Spice Model v1.0M Last Revised 2016/2/18 *---------- DMTH6004SK3 Spice Model ---------- .SUBCKT DMTH6004SK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001226 RS 30 3 1E-008 RG 20 2 0.66 CGS 2 3 4.957E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.8E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.661 + TOX = 6E-008 NSUB = 1E+016 KP = 76.21 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 1.182E-009 VJ = 1 M = 0.6256 .MODEL DSUB D IS = 5.527E-010 N = 1.203 RS = 0.002268 BV = 64 CJO = 2.894E-009 VJ = 1 M = 0.2266 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6004SK3 Spice Model v1.0M Last Revised 2016/2/18 *---------- DMTH6005LK3Q Spice Model ---------- .SUBCKT DMTH6005LK3Q 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.003586 RS 30 3 1E-008 RG 20 2 0.66 CGS 2 3 3.195E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.3E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.272 + TOX = 6E-008 NSUB = 1E+016 KP = 222.2 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 5.577E-010 VJ = 1 M = 0.9082 .MODEL DSUB D IS = 4.976E-010 N = 1.224 RS = 0.001644 BV = 70 CJO = 2.885E-009 VJ = 1 M = 0.9133 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6005LK3Q Spice Model v1.0M Last Revised 2016/2/22 *---------- DMTH8012LPSQ Spice Model ---------- .SUBCKT DMT8012LPSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.008517 RS 30 3 0.001 RG 20 2 0.44 CGS 2 3 2.128E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.2E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.597 + TOX = 6E-008 NSUB = 1E+016 KP = 56.79 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 8.921E-010 VJ = 0.7739 M = 0.8 .MODEL DSUB D IS = 2.461E-010 N = 1.229 RS = 0.001885 BV = 89 CJO = 1.11E-009 VJ = 0.8 M = 0.6392 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT8012LPSQ Spice Model v1.0M Last Revised 2016/3/21 *---------- DMTH6004SK3Q Spice Model ---------- .SUBCKT DMTH6004SK3Q 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001226 RS 30 3 1E-008 RG 20 2 0.66 CGS 2 3 4.957E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.8E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.661 + TOX = 6E-008 NSUB = 1E+016 KP = 76.21 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 1.182E-009 VJ = 1 M = 0.6256 .MODEL DSUB D IS = 5.527E-010 N = 1.203 RS = 0.002268 BV = 64 CJO = 2.894E-009 VJ = 1 M = 0.2266 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6004SK3Q Spice Model v1.0M Last Revised 2016/2/18 *---------- DMTH6009LK3 Spice Model ---------- .SUBCKT DMTH6009LK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.006099 RS 30 3 1E-008 RG 20 2 1.71 CGS 2 3 2.016E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.086 + TOX = 6E-008 NSUB = 1E+016 KP = 136.4 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 4.367E-010 VJ = 1 M = 0.5797 .MODEL DSUB D IS = 2.239E-010 N = 1.183 RS = 0.005972 BV = 67 CJO = 8.953E-010 VJ = 1 M = 0.201 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6009LK3 Spice Model v1.0 Last Revised 2015/7/27 *---------- DMT6004SCT Spice Model ---------- .SUBCKT DMT6004SCT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001226 RS 30 3 1E-008 RG 20 2 0.66 CGS 2 3 4.957E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.8E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.661 + TOX = 6E-008 NSUB = 1E+016 KP = 76.21 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 1.182E-009 VJ = 1 M = 0.6256 .MODEL DSUB D IS = 5.527E-010 N = 1.203 RS = 0.002268 BV = 64 CJO = 2.894E-009 VJ = 1 M = 0.2266 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT6004SCT Spice Model v1.0M Last Revised 2016/4/6 *---------- DMNH6012SPS Spice Model ---------- .SUBCKT DMNH6012SPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004237 RS 30 3 0.001 RG 20 2 2 CGS 2 3 1.998E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.301E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.907 + TOX = 6E-008 NSUB = 1E+016 KP = 68.11 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 6.216E-010 VJ = 1 M = 0.9231 .MODEL DSUB D IS = 2.336E-010 N = 1.151 RS = 0.0009964 BV = 71 CJO = 1.485E-009 VJ = 0.7681 M = 0.4279 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6012SPS Spice Model v1.0 Last Revised 2015/04/12 *---------- DMTH4005SK3Q Spice Model ---------- .SUBCKT DMTH4005SK3Q 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 9.814E-005 RS 30 3 0.001 RG 20 2 0.67 CGS 2 3 2.961E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.3E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.117 + TOX = 6E-008 NSUB = 1E+016 KP = 46.39 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.053E-009 VJ = 0.8 M = 0.6001 .MODEL DSUB D IS = 1.159E-009 N = 1.284 RS = 0.0003205 BV = 40 CJO = 1.784E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4005SK3Q Spice Model v1.0M Last Revised 2016/3/8 *---------- DMNH6008SPSQ Spice Model ---------- .SUBCKT DMNH6008SPSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001343 RS 30 3 0.001 RG 20 2 1.35 CGS 2 3 2.757E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.209 + TOX = 6E-008 NSUB = 1E+016 KP = 43.04 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.614E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.22E-010 N = 1.156 RS = 4.441E-010 BV = 68 CJO = 2E-009 VJ = 0.8 M = 0.6 TT=1.6E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6008SPSQ Spice Model v1.0M Last Revised 2016/3/31 *---------- DMNH6012SPSQ Spice Model ---------- .SUBCKT DMNH6012SPSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004237 RS 30 3 0.001 RG 20 2 2 CGS 2 3 1.998E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.301E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.907 + TOX = 6E-008 NSUB = 1E+016 KP = 68.11 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 6.216E-010 VJ = 1 M = 0.9231 .MODEL DSUB D IS = 2.336E-010 N = 1.151 RS = 0.0009964 BV = 71 CJO = 1.485E-009 VJ = 0.7681 M = 0.4279 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6012SPSQ Spice Model v1.0 Last Revised 2015/04/12 *---------- DMNH6008SCTQ Spice Model ---------- .SUBCKT DMNH6008SCTQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001343 RS 30 3 0.001 RG 20 2 1.35 CGS 2 3 2.757E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.209 + TOX = 6E-008 NSUB = 1E+016 KP = 43.04 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.614E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.22E-010 N = 1.156 RS = 4.441E-010 BV = 68 CJO = 2E-009 VJ = 0.8 M = 0.6 TT=1.6E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6008SCTQ Spice Model v1.0M Last Revised 2016/3/31 *---------- BSS138DWQ Spice Model ---------- .SUBCKT BSS138DWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.9338 RS 30 3 0.001 RG 20 2 47 CGS 2 3 1.906E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.9E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 1E-012 VTO = 1.422 + TOX = 6E-008 NSUB = 1E+016 KP = 0.5025 U0 = 400 KAPPA = 7.117 .MODEL DCGD D CJO = 9.463E-012 VJ = 6.446 M = 0.9816 .MODEL DSUB D IS = 7.582E-010 N = 1.586 RS = 0.1976 + BV = 65 CJO = 1.173E-011 VJ = 0.03727 M = 0.2868 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes BSS138DWQ Spice Model v1.0M Last Revised 2016/4/19 *---------- DMT6010SCT Spice Model ---------- .SUBCKT DMT6010SCT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004229 RS 30 3 0.001 RG 20 2 0.59 CGS 2 3 2.15E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.58E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.161 + TOX = 6E-008 NSUB = 1E+016 KP = 161.3 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 9.443E-010 VJ = 1 M = 0.9231 .MODEL DSUB D IS = 3.582E-010 N = 1.161 RS = 0.004476 BV = 72.8 CJO = 1.69E-009 VJ = 1 M = 0.9352 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT6010SCT Spice Model v1.0M Last Revised 2016/4/7 *---------- DMT6005LPS Spice Model ---------- .SUBCKT DMT6005LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.003586 RS 30 3 1E-008 RG 20 2 0.66 CGS 2 3 3.195E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.3E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.272 + TOX = 6E-008 NSUB = 1E+016 KP = 222.2 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 5.577E-010 VJ = 1 M = 0.9082 .MODEL DSUB D IS = 4.976E-010 N = 1.224 RS = 0.001644 BV = 70 CJO = 2.885E-009 VJ = 1 M = 0.9133 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT6005LPS Spice Model v1.0M Last Revised 2016/4/20 *---------- DMTH6010SCT Spice Model ---------- .SUBCKT DMTH6010SCT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004229 RS 30 3 0.001 RG 20 2 0.59 CGS 2 3 2.15E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.58E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.161 + TOX = 6E-008 NSUB = 1E+016 KP = 161.3 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 9.443E-010 VJ = 1 M = 0.9231 .MODEL DSUB D IS = 3.582E-010 N = 1.161 RS = 0.004476 BV = 72.8 CJO = 1.69E-009 VJ = 1 M = 0.9352 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6010SCT Spice Model v1.0M Last Revised 2016/4/7 ---------- DMTH4007SK3 Spice Model ---------- .SUBCKT DMTH4007SK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.002288 RS 30 3 0.001 RG 20 2 0.46 CGS 2 3 2.042E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.7E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.513 + TOX = 6E-008 NSUB = 1E+016 KP = 100 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 1.098E-009 VJ = 1 M = 0.9231 .MODEL DSUB D IS = 2.333E-010 N = 1.213 RS = 0.0009699 BV = 72.8 CJO = 1.33E-009 VJ = 1 M = 0.1934 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4007SK3 Spice Model v1.0M Last Revised 2016/4/25 *---------- DMT6009LCT Spice Model ---------- .SUBCKT DMT6009LCT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.006099 RS 30 3 1E-008 RG 20 2 1.71 CGS 2 3 2.016E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.086 + TOX = 6E-008 NSUB = 1E+016 KP = 136.4 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 4.367E-010 VJ = 1 M = 0.5797 .MODEL DSUB D IS = 2.239E-010 N = 1.183 RS = 0.005972 BV = 67 CJO = 8.953E-010 VJ = 1 M = 0.201 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT6009LCT Spice Model v1.0M Last Revised 2016/5/4 *---------- DMNH6021SK3Q Spice Model ---------- .SUBCKT DMNH6021SK3Q 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00808 RS 30 3 0.001 RG 20 2 2.18 CGS 2 3 9.932E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.343 + TOX = 6E-008 NSUB = 1E+016 KP = 37.38 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.614E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.001E-009 N = 1.251 RS = 0.0008424 BV = 73 CJO = 8.135E-010 VJ = 0.6295 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6021SK3Q Spice Model v1.0M Last Revised 2016/5/10 *---------- DMT6009LPS Spice Model ---------- .SUBCKT DMT6009LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.006099 RS 30 3 1E-008 RG 20 2 1.71 CGS 2 3 2.016E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.086 + TOX = 6E-008 NSUB = 1E+016 KP = 136.4 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 4.367E-010 VJ = 1 M = 0.5797 .MODEL DSUB D IS = 2.239E-010 N = 1.183 RS = 0.005972 BV = 67 CJO = 8.953E-010 VJ = 1 M = 0.201 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT6009LPS Spice Model v1.0M Last Revised 2016/5/4 *---------- DMT6015LSS Spice Model ---------- .SUBCKT DMT6015LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.008244 RS 30 3 0.001 RG 20 2 1.48 CGS 2 3 1.107E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.997 + TOX = 6E-008 NSUB = 1E+016 KP = 40.42 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.204E-010 VJ = 0.8 M = 0.6777 .MODEL DSUB D IS = 1.257E-009 N = 1.322 RS = 0.005675 BV = 60 CJO = 5.719E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT6015LSS Spice Model v1.0M Last Revised 2016/5/4 *---------- DMTH6010LPD Spice Model ---------- .SUBCKT DMTH6010LPD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004229 RS 30 3 0.001 RG 20 2 0.59 CGS 2 3 2.15E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.58E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.161 + TOX = 6E-008 NSUB = 1E+016 KP = 161.3 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 9.443E-010 VJ = 1 M = 0.9231 .MODEL DSUB D IS = 3.582E-010 N = 1.161 RS = 0.004476 BV = 72.8 CJO = 1.69E-009 VJ = 1 M = 0.9352 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6010LPD Spice Model v1.0M Last Revised 2016/5/4 *---------- DMT6005LSS Spice Model ---------- .SUBCKT DMT6005LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001828 RS 30 3 0.001 RG 20 2 0.66 CGS 2 3 3.208E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.2E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.908 + TOX = 6E-008 NSUB = 1E+016 KP = 92.19 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.295E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 7.508E-009 N = 1.396 RS = 0.0001377 BV = 60 CJO = 2E-009 VJ = 0.8 M = 0.6 TT = 2E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT6005LSS Spice Model v1.0M Last Revised 2016/3/30 *---------- DMTH6010LPDQ Spice Model ---------- .SUBCKT DMTH6010LPDQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005507 RS 30 3 0.001 RG 20 2 0.67 CGS 2 3 2.569E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.2E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.411 + TOX = 6E-008 NSUB = 1E+016 KP = 66.76 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 8.846E-010 VJ = 0.8 M = 0.7836 .MODEL DSUB D IS = 2.263E-010 N = 1.18 RS = 0.007091 BV = 68 CJO = 3E-009 VJ = 0.8 M = 0.6 TT = 1.7E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6010LPDQ Spice Model v1.0M Last Revised 2016/5/20 *---------- DMT4004LPS Spice Model ---------- .SUBCKT DMT4004LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0006761 RS 30 3 0.001 RG 20 2 0.66 CGS 2 3 4.581E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.5E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.369 + TOX = 6E-008 NSUB = 1E+016 KP = 208.7 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 5.071E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.691E-008 N = 1.354 RS = 0.0001471 BV = 40 CJO = 6.893E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT4004LPS Spice Model v1.0M Last Revised 2016/5/4 *---------- DMT8012LSS Spice Model ---------- .SUBCKT DMT8012LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.008517 RS 30 3 0.001 RG 20 2 0.44 CGS 2 3 2.128E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.2E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.597 + TOX = 6E-008 NSUB = 1E+016 KP = 56.79 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 8.921E-010 VJ = 0.7739 M = 0.8 .MODEL DSUB D IS = 2.461E-010 N = 1.229 RS = 0.001885 BV = 89 CJO = 1.11E-009 VJ = 0.8 M = 0.6392 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT8012LSS Spice Model v1.0M Last Revised 2016/5/4 *---------- DMT6017LSS Spice Model ---------- .SUBCKT DMT6017LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.008248 RS 30 3 0.001 RG 20 2 1.35 CGS 2 3 8.551E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.685 + TOX = 6E-008 NSUB = 1E+016 KP = 44 U0 = 400 KAPPA = 1 .MODEL DCGD D CJO = 3.956E-010 VJ = 0.8 M = 0.6557 .MODEL DSUB D IS = 3.752E-008 N = 1.624 RS = 0.005938 BV = 65 CJO = 5.236E-010 VJ = 1 M = 0.2051 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT6017LSS Spice Model v1.0M Last Revised 2016/5/4 *---------- DMT69M8LPS Spice Model ---------- .SUBCKT DMT69M8LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.006099 RS 30 3 1E-008 RG 20 2 1.71 CGS 2 3 2.016E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.086 + TOX = 6E-008 NSUB = 1E+016 KP = 136.4 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 4.367E-010 VJ = 1 M = 0.5797 .MODEL DSUB D IS = 2.239E-010 N = 1.183 RS = 0.005972 BV = 67 CJO = 8.953E-010 VJ = 1 M = 0.201 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT69M8LPS Spice Model v1.0M Last Revised 2016/5/4 *---------- DMNH4006SPSQ Spice Model ---------- .SUBCKT DMNH4006SPSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001 RS 30 3 0.001 RG 20 2 1.7 CGS 2 3 2.157E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.15 + TOX = 6E-008 NSUB = 1E+016 KP = 47.64 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.275E-009 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.252E-010 N = 1.153 RS = 0.001541 BV = 40 CJO = 1.897E-009 VJ = 0.7999 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH4006SPSQ Spice Model v1.0M Last Revised 2016/3/31 *---------- DMT6015LFV Spice Model ---------- .SUBCKT DMT6015LFV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.008244 RS 30 3 0.001 RG 20 2 1.48 CGS 2 3 1.107E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.997 + TOX = 6E-008 NSUB = 1E+016 KP = 40.42 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.204E-010 VJ = 0.8 M = 0.6777 .MODEL DSUB D IS = 1.257E-009 N = 1.322 RS = 0.005675 BV = 60 CJO = 5.719E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT6015LFV Spice Model v1.0M Last Revised 2016/5/26 *---------- DMNH4006SK3Q Spice Model ---------- .SUBCKT DMNH4006SK3Q 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001 RS 30 3 0.001 RG 20 2 1.7 CGS 2 3 2.157E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.15 + TOX = 6E-008 NSUB = 1E+016 KP = 47.64 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.275E-009 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.252E-010 N = 1.153 RS = 0.001541 BV = 40 CJO = 1.897E-009 VJ = 0.7999 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH4006SK3Q Spice Model v1.0 Last Revised 2015/9/10 *---------- DMNH4011SPSQ Spice Model ---------- .SUBCKT DMNH4011SPSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004592 RS 30 3 0.001 RG 20 2 2.19 CGS 2 3 1.266E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.749 + TOX = 6E-008 NSUB = 1E+016 KP = 48.89 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 8.203E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 2.926E-010 N = 1.193 RS = 0.001056 BV = 55 CJO = 8.778E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH4011SPSQ Spice Model v1.0M Last Revised 2016/04/28 *---------- DMTH4004LPS Spice Model ---------- .SUBCKT DMTH4004LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0006761 RS 30 3 0.001 RG 20 2 0.66 CGS 2 3 4.581E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.5E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.369 + TOX = 6E-008 NSUB = 1E+016 KP = 208.7 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 5.071E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.691E-008 N = 1.354 RS = 0.0001471 BV = 40 CJO = 6.893E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4004LPS Spice Model v1.0M Last Revised 2016/4/18 *---------- DMTH6016LPS Spice Model ---------- .SUBCKT DMTH6016LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.006728 RS 30 3 0.001 RG 20 2 1.35 CGS 2 3 8.475E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.61 + TOX = 6E-008 NSUB = 1E+016 KP = 37.72 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.945E-010 VJ = 0.8 M = 0.6507 .MODEL DSUB D IS = 2.448E-010 N = 1.248 RS = 0.006471 BV = 60 CJO = 5.274E-010 VJ = 0.8 M = 0.6 TT=2.2E-010 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6016LPS Spice Model v1.0M Last Revised 2016/4/19 *---------- DMTH6010SK3Q Spice Model ---------- .SUBCKT DMTH6010SK3Q 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001 RS 30 3 0.001 RG 20 2 0.39 CGS 2 3 2.821E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.126 + TOX = 6E-008 NSUB = 1E+016 KP = 42.75 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 5.661E-010 VJ = 0.8 M = 0.7959 .MODEL DSUB D IS = 2.263E-010 N = 1.18 RS = 0.007091 BV = 67 CJO = 2E-009 VJ = 0.8 M = 0.6 TT = 1.7E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6010SK3Q Spice Model v1.0M Last Revised 2016/5/30 *---------- DMP4025LSSQ Spice Model ---------- .SUBCKT DMP4025LSSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.006043 RS 30 3 0.001 RG 20 2 6.43 CGS 2 3 1.554E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.4E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 + TOX = 6E-008 NSUB = 1E+016 KP = 11.66 KAPPA = 9.057 VTO = -1.385 .MODEL DCGD D CJO = 5.62E-010 VJ = 0.6 M = 0.4221 .MODEL DSUB D IS = 4.586E-010 N = 1.275 RS = 0.01773 + BV = 50 CJO = 2.892E-010 VJ = 0.0947 M = 0.3174 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP4025LSSQ Spice Model v1.0 Last Revised 2016/5/3 *---------- DMTH4005SCT Spice Model ---------- .SUBCKT DMTH4005SCT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 9.814E-005 RS 30 3 0.001 RG 20 2 0.67 CGS 2 3 2.961E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.3E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.117 + TOX = 6E-008 NSUB = 1E+016 KP = 46.39 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.053E-009 VJ = 0.8 M = 0.6001 .MODEL DSUB D IS = 1.159E-009 N = 1.284 RS = 0.0003205 BV = 40 CJO = 1.784E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4005SCT Spice Model v1.0M Last Revised 2016/6/1 *---------- DMNH6021SK3 Spice Model ---------- .SUBCKT DMNH6021SK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00808 RS 30 3 0.001 RG 20 2 2.18 CGS 2 3 9.932E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.343 + TOX = 6E-008 NSUB = 1E+016 KP = 37.38 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.614E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.001E-009 N = 1.251 RS = 0.0008424 BV = 73 CJO = 8.135E-010 VJ = 0.6295 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6021SK3 Spice Model v1.0M Last Revised 2016/5/10 *---------- DMT4005SCT Spice Model ---------- .SUBCKT DMT4005SCT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 9.814E-005 RS 30 3 0.001 RG 20 2 0.67 CGS 2 3 2.961E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.3E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.117 + TOX = 6E-008 NSUB = 1E+016 KP = 46.39 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.053E-009 VJ = 0.8 M = 0.6001 .MODEL DSUB D IS = 1.159E-009 N = 1.284 RS = 0.0003205 BV = 40 CJO = 1.784E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT4005SCT Spice Model v1.0M Last Revised 2016/6/1 *---------- DMTH6005LCT Spice Model ---------- .SUBCKT DMTH6005LCT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.003586 RS 30 3 1E-008 RG 20 2 0.66 CGS 2 3 3.195E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.3E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.272 + TOX = 6E-008 NSUB = 1E+016 KP = 222.2 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 5.577E-010 VJ = 1 M = 0.9082 .MODEL DSUB D IS = 4.976E-010 N = 1.224 RS = 0.001644 BV = 70 CJO = 2.885E-009 VJ = 1 M = 0.9133 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6005LCT Spice Model v1.0M Last Revised 2016/6/1 *---------- DMNH6021SPS Spice Model ---------- .SUBCKT DMNH6021SPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00808 RS 30 3 0.001 RG 20 2 2.18 CGS 2 3 9.932E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.343 + TOX = 6E-008 NSUB = 1E+016 KP = 37.38 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.614E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.001E-009 N = 1.251 RS = 0.0008424 BV = 73 CJO = 8.135E-010 VJ = 0.6295 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6021SPS Spice Model v1.0M Last Revised 2016/4/28 *---------- DMNH6021SPSQ Spice Model ---------- .SUBCKT DMNH6021SPSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00808 RS 30 3 0.001 RG 20 2 2.18 CGS 2 3 9.932E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.343 + TOX = 6E-008 NSUB = 1E+016 KP = 37.38 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.614E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.001E-009 N = 1.251 RS = 0.0008424 BV = 73 CJO = 8.135E-010 VJ = 0.6295 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6021SPSQ Spice Model v1.0M Last Revised 2016/4/28 *---------- DMNH6021SPD Spice Model ---------- .SUBCKT DMNH6021SPD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00808 RS 30 3 0.001 RG 20 2 2.18 CGS 2 3 9.932E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.343 + TOX = 6E-008 NSUB = 1E+016 KP = 37.38 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.614E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.001E-009 N = 1.251 RS = 0.0008424 BV = 73 CJO = 8.135E-010 VJ = 0.6295 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6021SPD Spice Model v1.0M Last Revised 2016/4/28 *---------- DMNH6021SPDQ Spice Model ---------- .SUBCKT DMNH6021SPDQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00808 RS 30 3 0.001 RG 20 2 2.18 CGS 2 3 9.932E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.343 + TOX = 6E-008 NSUB = 1E+016 KP = 37.38 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.614E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.001E-009 N = 1.251 RS = 0.0008424 BV = 73 CJO = 8.135E-010 VJ = 0.6295 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6021SPDQ Spice Model v1.0M Last Revised 2016/4/28 *---------- 2N7002AQ Spice Model ---------- .SUBCKT 2N7002AQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 2.175 RS 30 3 0.001 RG 20 2 79.9 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 2.011E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.9E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001583 VTO = 1.595 + TOX = 6E-008 NSUB = 1E+016 KP = 0.58 U0 = 400 KAPPA = 4.069 .MODEL DCGD D CJO = 1.646E-011 VJ = 0.1277 M = 0.4 .MODEL DSUB D IS = 4.551E-009 N = 1.836 RS = 0.1357 + CJO = 2.877E-012 VJ = 1.307E-009 M = 0.03355 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS = 1.223E-008 N = 54.79 BV = 5.385 .ENDS *Diodes 2N7002AQ Spice Model v1.0 Last Revised 2016/6/15 *---------- DMNH6022SSD Spice Model ---------- .SUBCKT DMNH6022SSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01507 RS 30 3 0.001 RG 20 2 1.95 CGS 2 3 1.906E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.91 + TOX = 6E-008 NSUB = 1E+016 KP = 27.65 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.087E-010 VJ = 0.6996 M = 0.6 .MODEL DSUB D IS = 2.295E-010 N = 1.289 RS = 0.003381 BV = 67 CJO = 3.016E-010 VJ = 0.6 M = 0.6 TT=9E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6022SSD Spice Model v1.0M Last Revised 2016/4/28 *---------- DMNH6022SSDQ Spice Model ---------- .SUBCKT DMNH6022SSDQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01507 RS 30 3 0.001 RG 20 2 1.95 CGS 2 3 1.906E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.91 + TOX = 6E-008 NSUB = 1E+016 KP = 27.65 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.087E-010 VJ = 0.6996 M = 0.6 .MODEL DSUB D IS = 2.295E-010 N = 1.289 RS = 0.003381 BV = 67 CJO = 3.016E-010 VJ = 0.6 M = 0.6 TT=9E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6022SSDQ Spice Model v1.0M Last Revised 2016/4/28 *---------- DMNH6012LK3 Spice Model ---------- .SUBCKT DMNH6012LK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004237 RS 30 3 0.001 RG 20 2 2 CGS 2 3 1.998E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.301E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.907 + TOX = 6E-008 NSUB = 1E+016 KP = 68.11 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 6.216E-010 VJ = 1 M = 0.9231 .MODEL DSUB D IS = 2.336E-010 N = 1.151 RS = 0.0009964 BV = 71 CJO = 1.485E-009 VJ = 0.7681 M = 0.4279 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6012LK3 Spice Model v1.0 Last Revised 2015/04/12 *---------- DMNH6012LK3Q Spice Model ---------- .SUBCKT DMNH6012LK3Q 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004237 RS 30 3 0.001 RG 20 2 2 CGS 2 3 1.998E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.301E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.907 + TOX = 6E-008 NSUB = 1E+016 KP = 68.11 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 6.216E-010 VJ = 1 M = 0.9231 .MODEL DSUB D IS = 2.336E-010 N = 1.151 RS = 0.0009964 BV = 71 CJO = 1.485E-009 VJ = 0.7681 M = 0.4279 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6012LK3Q Spice Model v1.0 Last Revised 2015/04/12 *---------- DMNH6042SPD Spice Model ---------- .SUBCKT DMNH6042SPD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02382 RS 30 3 0.001 RG 20 2 3.84 CGS 2 3 4.735E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.931 + TOX = 6E-008 NSUB = 1E+016 KP = 29.13 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.626E-010 VJ = 0.6807 M = 0.6 .MODEL DSUB D IS = 2.317E-010 N = 1.22 RS = 0.005274 BV = 70 CJO = 1E-010 VJ = 0.6065 M = 0.6033 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6042SPD Spice Model v1.0M Last Revised 2016/3/4 *---------- DMNH6042SPDQ Spice Model ---------- .SUBCKT DMNH6042SPDQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02382 RS 30 3 0.001 RG 20 2 3.84 CGS 2 3 4.735E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.931 + TOX = 6E-008 NSUB = 1E+016 KP = 29.13 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.626E-010 VJ = 0.6807 M = 0.6 .MODEL DSUB D IS = 2.317E-010 N = 1.22 RS = 0.005274 BV = 70 CJO = 1E-010 VJ = 0.6065 M = 0.6033 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6042SPDQ Spice Model v1.0M Last Revised 2016/4/28 *---------- DMNH6042SSD Spice Model ---------- .SUBCKT DMNH6042SSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02382 RS 30 3 0.001 RG 20 2 3.84 CGS 2 3 4.735E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.931 + TOX = 6E-008 NSUB = 1E+016 KP = 29.13 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.626E-010 VJ = 0.6807 M = 0.6 .MODEL DSUB D IS = 2.317E-010 N = 1.22 RS = 0.005274 BV = 70 CJO = 1E-010 VJ = 0.6065 M = 0.6033 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6042SSD Spice Model v1.0M Last Revised 2016/3/4 *---------- DMT6005LCT Spice Model ---------- .SUBCKT DMT6005LCT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.003586 RS 30 3 1E-008 RG 20 2 0.66 CGS 2 3 3.195E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.3E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.272 + TOX = 6E-008 NSUB = 1E+016 KP = 222.2 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 5.577E-010 VJ = 1 M = 0.9082 .MODEL DSUB D IS = 4.976E-010 N = 1.224 RS = 0.001644 BV = 70 CJO = 2.885E-009 VJ = 1 M = 0.9133 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT6005LCT Spice Model v1.0M Last Revised 2016/6/1 *---------- DMN6013LFGQ Spice Model ---------- .SUBCKT DMN6013LFGQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005556 RS 30 3 0.001 RG 20 2 1.49 CGS 2 3 2.658E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.56E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.766 + TOX = 6E-008 NSUB = 1E+016 KP = 67.2 U0 = 400 KAPPA = 38.59 .MODEL DCGD D CJO = 1.231E-009 VJ = 0.6368 M = 0.5502 .MODEL DSUB D IS = 5E-011 N = 1.108 RS = 0.002574 + BV = 70 CJO = 5.209E-010 VJ = 0.9791 M = 0.89 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN6013LFGQ Spice Model v1.0M Last Revised 2016/5/3 *---------- DMNH6042SPS Spice Model ---------- .SUBCKT DMNH6042SPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02382 RS 30 3 0.001 RG 20 2 3.84 CGS 2 3 4.735E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.931 + TOX = 6E-008 NSUB = 1E+016 KP = 29.13 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.626E-010 VJ = 0.6807 M = 0.6 .MODEL DSUB D IS = 2.317E-010 N = 1.22 RS = 0.005274 BV = 70 CJO = 1E-010 VJ = 0.6065 M = 0.6033 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6042SPS Spice Model v1.0M Last Revised 2016/3/4 *---------- DMTH6009LPS Spice Model ---------- .SUBCKT DMTH6009LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.006099 RS 30 3 1E-008 RG 20 2 1.71 CGS 2 3 2.016E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.086 + TOX = 6E-008 NSUB = 1E+016 KP = 136.4 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 4.367E-010 VJ = 1 M = 0.5797 .MODEL DSUB D IS = 2.239E-010 N = 1.183 RS = 0.005972 BV = 67 CJO = 8.953E-010 VJ = 1 M = 0.201 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6009LPS Spice Model v1.0M Last Revised 2016/5/4 *---------- DMTH4004SK3Q Spice Model ---------- .SUBCKT DMTH4004SK3Q 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001299 RS 30 3 0.001 RG 20 2 0.77 CGS 2 3 4.614E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.5E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.189 + TOX = 6E-008 NSUB = 1E+016 KP = 66.04 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 5.071E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 9.177E-009 N = 1.352 RS = 9.544E-005 BV = 50 CJO = 6.893E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4004SK3Q Spice Model v1.0 Last Revised 2016/7/21 *---------- DMNH6042SK3 Spice Model ---------- .SUBCKT DMNH6042SK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02382 RS 30 3 0.001 RG 20 2 3.84 CGS 2 3 4.735E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.931 + TOX = 6E-008 NSUB = 1E+016 KP = 29.13 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.626E-010 VJ = 0.6807 M = 0.6 .MODEL DSUB D IS = 2.317E-010 N = 1.22 RS = 0.005274 BV = 70 CJO = 1E-010 VJ = 0.6065 M = 0.6033 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6042Sk3 Spice Model v1.0M Last Revised 2016/3/4 *---------- DMNH6042SK3Q Spice Model ---------- .SUBCKT DMNH6042SK3Q 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02382 RS 30 3 0.001 RG 20 2 3.84 CGS 2 3 4.735E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.931 + TOX = 6E-008 NSUB = 1E+016 KP = 29.13 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.626E-010 VJ = 0.6807 M = 0.6 .MODEL DSUB D IS = 2.317E-010 N = 1.22 RS = 0.005274 BV = 70 CJO = 1E-010 VJ = 0.6065 M = 0.6033 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6042Sk3Q Spice Model v1.0M Last Revised 2016/3/4 *---------- DMNH4015SSD Spice Model ---------- .SUBCKT DMNH4015SSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005294 RS 30 3 0.001 RG 20 2 1.79 CGS 2 3 1.835E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.15E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.131 + TOX = 6E-008 NSUB = 1E+016 KP = 64.22 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 6.395E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.266E-010 N = 1.191 RS = 0.003973 BV = 45 CJO = 2.425E-010 VJ = 0.8 M = 0.6 TT=5E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH4015SSD Spice Model v1.0M Last Revised 2016/7/18 *---------- DMNH4015SSDQ Spice Model ---------- .SUBCKT DMNH4015SSDQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005294 RS 30 3 0.001 RG 20 2 1.79 CGS 2 3 1.835E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.15E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.131 + TOX = 6E-008 NSUB = 1E+016 KP = 64.22 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 6.395E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.266E-010 N = 1.191 RS = 0.003973 BV = 45 CJO = 2.425E-010 VJ = 0.8 M = 0.6 TT=5E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH4015SSDQ Spice Model v1.0M Last Revised 2016/7/18 *---------- DMTH6016LPSQ Spice Model ---------- .SUBCKT DMTH6016LPSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.006728 RS 30 3 0.001 RG 20 2 1.35 CGS 2 3 8.475E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.61 + TOX = 6E-008 NSUB = 1E+016 KP = 37.72 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.945E-010 VJ = 0.8 M = 0.6507 .MODEL DSUB D IS = 2.448E-010 N = 1.248 RS = 0.006471 BV = 60 CJO = 5.274E-010 VJ = 0.8 M = 0.6 TT=2.2E-010 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6016LPSQ Spice Model v1.0M Last Revised 2016/7/22 *---------- DMNH4011SPS Spice Model ---------- .SUBCKT DMNH4011SPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004592 RS 30 3 0.001 RG 20 2 2.19 CGS 2 3 1.266E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.749 + TOX = 6E-008 NSUB = 1E+016 KP = 48.89 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 8.203E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 2.926E-010 N = 1.193 RS = 0.001056 BV = 55 CJO = 8.778E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH4011SPS Spice Model v1.0M Last Revised 2016/04/28 *---------- DMNH6008SCT Spice Model ---------- .SUBCKT DMNH6008SCT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001343 RS 30 3 0.001 RG 20 2 1.35 CGS 2 3 2.757E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.209 + TOX = 6E-008 NSUB = 1E+016 KP = 43.04 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.614E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.22E-010 N = 1.156 RS = 4.441E-010 BV = 68 CJO = 2E-009 VJ = 0.8 M = 0.6 TT=1.6E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6008SCT Spice Model v1.0M Last Revised 2016/3/31 *---------- DMNH6042SPSQ Spice Model ---------- .SUBCKT DMNH6042SPSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02382 RS 30 3 0.001 RG 20 2 3.84 CGS 2 3 4.735E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.931 + TOX = 6E-008 NSUB = 1E+016 KP = 29.13 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.626E-010 VJ = 0.6807 M = 0.6 .MODEL DSUB D IS = 2.317E-010 N = 1.22 RS = 0.005274 BV = 70 CJO = 1E-010 VJ = 0.6065 M = 0.6033 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6042SPSQ Spice Model v1.0M Last Revised 2016/3/4 *---------- DMNH6042SSDQ Spice Model ---------- .SUBCKT DMNH6042SSDQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02382 RS 30 3 0.001 RG 20 2 3.84 CGS 2 3 4.735E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.931 + TOX = 6E-008 NSUB = 1E+016 KP = 29.13 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.626E-010 VJ = 0.6807 M = 0.6 .MODEL DSUB D IS = 2.317E-010 N = 1.22 RS = 0.005274 BV = 70 CJO = 1E-010 VJ = 0.6065 M = 0.6033 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6042SSDQ Spice Model v1.0M Last Revised 2016/3/4 *---------- DMT4002LPS Spice Model ---------- .SUBCKT DMT4002LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 5E-008 RS 30 3 0.001 RG 20 2 0.85 CGS 2 3 6.987E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.8E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.461 + TOX = 6E-008 NSUB = 1E+016 KP = 290.9 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.21E-009 VJ = 0.8 M = 0.7963 .MODEL DSUB D IS = 2.268E-010 N = 1.123 RS = 0.0001872 BV = 45 CJO = 5E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT4002LPS Spice Model v1.0M Last Revised 2016/8/31 *---------- DMNH4005SCTQ Spice Model ---------- .SUBCKT DMNH4005SCTQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001 RS 30 3 0.001 RG 20 2 1.66 CGS 2 3 2.804E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.37 + TOX = 6E-008 NSUB = 1E+016 KP = 102.4 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 8E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.268E-010 N = 1.123 RS = 0.0001872 BV = 51 CJO = 3E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH4005SCTQ Spice Model v1.0M Last Revised 2016/8/30 *---------- DMT6002LPS Spice Model ---------- .SUBCKT DMT6002LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0001 RS 30 3 0.001 RG 20 2 0.68 CGS 2 3 8E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.2E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.549 + TOX = 6E-008 NSUB = 1E+016 KP = 212 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.254E-009 VJ = 0.8 M = 0.6192 .MODEL DSUB D IS = 2.249E-010 N = 1.121 RS = 0.0001411 BV = 68 CJO = 4.5E-009 VJ = 0.8 M = 0.6 TT = 3.1E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT6002LPS Spice Model v1.0M Last Revised 2016/8/31 *---------- DMNH4005SCT Spice Model ---------- .SUBCKT DMNH4005SCT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001 RS 30 3 0.001 RG 20 2 1.66 CGS 2 3 2.804E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.37 + TOX = 6E-008 NSUB = 1E+016 KP = 102.4 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 8E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.268E-010 N = 1.123 RS = 0.0001872 BV = 51 CJO = 3E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH4005SCT Spice Model v1.0M Last Revised 2016/8/30 *---------- DMNH4026SSD Spice Model ---------- .SUBCKT DMNH4026SSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007676 RS 30 3 0.001 RG 20 2 1.5 CGS 2 3 1.176E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.129 + TOX = 6E-008 NSUB = 1E+016 KP = 40 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.925E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.232E-010 N = 1.234 RS = 0.004374 BV = 48 CJO = 2.224E-010 VJ = 0.7963 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH4026SSD Spice Model v1.0 Last Revised 2015/6/17 *---------- DMNH4026SSDQ Spice Model ---------- .SUBCKT DMNH4026SSDQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007676 RS 30 3 0.001 RG 20 2 1.5 CGS 2 3 1.176E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.129 + TOX = 6E-008 NSUB = 1E+016 KP = 40 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.925E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.232E-010 N = 1.234 RS = 0.004374 BV = 48 CJO = 2.224E-010 VJ = 0.7963 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH4026SSDQ Spice Model v1.0 Last Revised 2015/6/17 *---------- DMNH4005SPSQ Spice Model ---------- .SUBCKT DMNH4005SPSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001 RS 30 3 0.001 RG 20 2 1.66 CGS 2 3 2.804E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.37 + TOX = 6E-008 NSUB = 1E+016 KP = 102.4 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 8E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.268E-010 N = 1.123 RS = 0.0001872 BV = 51 CJO = 3E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH4005SPSQ Spice Model v1.0M Last Revised 2016/10/21 *---------- DMT4011LFG Spice Model ---------- .SUBCKT DMT4011LFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004622 RS 30 3 0.001 RG 20 2 0.98 CGS 2 3 7.377E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.084 + TOX = 6E-008 NSUB = 1E+016 KP = 50.72 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.891E-010 VJ = 0.8 M = 0.7987 .MODEL DSUB D IS = 4.2E-010 N = 1.244 RS = 0.006966 BV = 44 CJO = 5.719E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT4011LFG Spice Model v1.0 Last Revised 2016/10/28 *---------- DMTH6004LPSQ Spice Model ---------- .SUBCKT DMTH6004LPSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0001798 RS 30 3 0.001659 RG 20 2 0.64 CGS 2 3 4.923E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.7E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.095 + TOX = 6E-008 NSUB = 1E+016 KP = 287.2 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 1.864E-009 VJ = 1 M = 0.7538 .MODEL DSUB D IS = 1.026E-008 N = 1.357 RS = 4.441E-010 BV = 65 CJO = 3E-009 VJ = 0.8 M = 0.3 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6004LPSQ Spice Model v1.0 Last Revised 2016/10/28 *ZETEX ZVN0124A Spice Model v1.1 Last Revised 3/5/00 * .SUBCKT ZVN0124A 3 4 5 * D G S M1 3 2 5 5 MN0124 RG 4 2 225 RL 3 5 2.4E7 C1 2 5 60E-12 C2 3 2 2E-12 D1 5 3 DN0124 * .MODEL MN0124 NMOS VTO=1.5512 RS=1.436 RD=9.254 IS=1E-15 KP=1.077 +CBD=36E-12 PB=1 LAMBDA=0 .MODEL DN0124 D IS=3.071E-12 N=1.026 RS=0.511 .ENDS ZVN0124A * *$ * *ZETEX ZVN0540A Spice Model v1.0 Last Revised 4/8/04 * * .SUBCKT ZVN0540A 3 4 5 * D G S M1 6 20 8 8 MOSMOD M2 6 20 8 8 MOSMODS RG 4 2 55 RIN 2 8 200E6 RD 3 6 RMOD1 40 RS 8 5 RMOD1 2.5 RL 3 5 200E6 C1 2 8 160E-12 C2 17 3 2E-12 D1 5 3 DMOD1 D2 17 3 DMOD2 Egs1 2 17 2 8 1 Egt1 2 20 21 5 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 RMOD2 1 .MODEL MOSMOD NMOS VTO=2.26 IS=1E-15 KP=.59 CBD=15E-12 PB=1 LAMBDA=4.9E-3 .MODEL MOSMODS NMOS VTO=1.9 IS=1E-15 KP=0.02 PB=1 .MODEL DMOD1 D IS=2E-13 RS=10 N=1.01 IKF=3e-3 .MODEL DMOD2 D CJO=25e-12 IS=1e-30 N=10 .MODEL RMOD1 RES (TC1=8E-3 TC2=1.7E-5) .MODEL RMOD2 RES (TC1=-2.5e-3 TC2=3.3e-6) .ENDS * *$ * *ZETEX ZVN0545A Spice Model v1.0 Last Revised 20/5/04 * * .SUBCKT ZVN0545A 3 4 5 * D G S M1 6 20 8 8 MOSMOD M2 6 20 8 8 MOSMODS RG 4 2 55 RIN 2 8 200E6 RD 3 6 RMOD1 40 RS 8 5 RMOD1 2.5 RL 3 5 200E6 C1 2 8 160E-12 C2 17 3 2E-12 D1 5 3 DMOD1 D2 17 3 DMOD2 Egs1 2 17 2 8 1 Egt1 2 20 21 5 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 RMOD2 1 .MODEL MOSMOD NMOS VTO=2.26 IS=1E-15 KP=.59 CBD=15E-12 PB=1 LAMBDA=4.9E-3 .MODEL MOSMODS NMOS VTO=1.9 IS=1E-15 KP=0.02 PB=1 .MODEL DMOD1 D IS=2E-13 RS=10 N=1.01 IKF=3e-3 .MODEL DMOD2 D CJO=25e-12 IS=1e-30 N=10 .MODEL RMOD1 RES (TC1=8E-3 TC2=1.7E-5) .MODEL RMOD2 RES (TC1=-2.5e-3 TC2=3.3e-6) .ENDS * *$ * *ZETEX ZVN0545G Spice Model v1.0 Last Revised 20/5/04 * * .SUBCKT ZVN0545G 3 4 5 * D G S M1 6 20 8 8 MOSMOD M2 6 20 8 8 MOSMODS RG 4 2 55 RIN 2 8 200E6 RD 3 6 RMOD1 40 RS 8 5 RMOD1 2.5 RL 3 5 200E6 C1 2 8 160E-12 C2 17 3 2E-12 D1 5 3 DMOD1 D2 17 3 DMOD2 Egs1 2 17 2 8 1 Egt1 2 20 21 5 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 RMOD2 1 .MODEL MOSMOD NMOS VTO=2.26 IS=1E-15 KP=.59 CBD=15E-12 PB=1 LAMBDA=4.9E-3 .MODEL MOSMODS NMOS VTO=1.9 IS=1E-15 KP=0.02 PB=1 .MODEL DMOD1 D IS=2E-13 RS=10 N=1.01 IKF=3e-3 .MODEL DMOD2 D CJO=25e-12 IS=1e-30 N=10 .MODEL RMOD1 RES (TC1=8E-3 TC2=1.7E-5) .MODEL RMOD2 RES (TC1=-2.5e-3 TC2=3.3e-6) .ENDS * *$ * *ZETEX ZVN2110A Spice Model v1.1 Last Revised 3/5/00 * .SUBCKT ZVN2110A 3 4 5 * D G S M1 3 2 5 5 MN2110a M2 3 2 5 5 MN2110b RG 4 2 200 RL 3 5 1E9 C1 2 5 50E-12 C2 3 2 5E-12 D1 5 3 DN2110a * .MODEL MN2110a NMOS VTO=2 RS=.1 RD=1.8 IS=1E-15 KP=0.3 +CBD=60E-12 PB=1 LAMBDA=2.6E-3 .MODEL MN2110b NMOS VTO=0.9 RS=2 KP=0.1 PB=1 LAMBDA=2.6E-3 .MODEL DN2110a D IS=1E-12 RS=0.37 .ENDS ZVN2110A * *$ * *ZETEX ZVN2110G Spice Model v1.1 Last Revised 3/5/00 * .SUBCKT ZVN2110G 3 4 5 * D G S M1 3 2 5 5 MN2110a M2 3 2 5 5 MN2110b RG 4 2 200 RL 3 5 1E9 C1 2 5 50E-12 C2 3 2 5E-12 D1 5 3 DN2110a * .MODEL MN2110a NMOS VTO=2 RS=.1 RD=1.8 IS=1E-15 KP=0.3 +CBD=60E-12 PB=1 LAMBDA=2.6E-3 .MODEL MN2110b NMOS VTO=0.9 RS=2 KP=0.1 PB=1 LAMBDA=2.6E-3 .MODEL DN2110a D IS=1E-12 RS=0.37 .ENDS ZVN2110G * *$ * *ZETEX ZVN2120G Spice Model v2.1 Last Revised 12/10/06 * .SUBCKT ZVN2120G 3 4 5 * D G S M1 30 2 50 50 Mmod1 M2 30 2 50 50 Mmod2 RG 4 2 35 RIN 2 5 2E10 RL 3 5 2E8 RD 31 30 Rmod1 7 RS 50 51 1.0 C1 2 50 60E-12 C2 3 2 6E-12 C3 12 50 50E-12 C4 15 14 100E-12 D1 5 3 Dmod1 VX 51 5 0 H1 60 5 VX 10 S3 3 31 60 5 Smod3 S1A 2 12 13 50 Smod1a S1B 13 12 13 50 Smod1b S2A 2 15 14 13 Smod2a S2B 13 15 14 13 Smod2b Egs1 13 50 2 50 1 Eds1 14 50 30 50 1 * .MODEL Mmod1 NMOS VTO=1.8 IS=1E-15 KP=0.5 PB=1 LAMBDA=1.5E-3 .MODEL Mmod2 NMOS VTO=1.3 RS=2 KP=0.1 PB=1 LAMBDA=1.5E-3 .MODEL Dmod1 D IS=1E-12 BV=220 RS=1 CJO=124E-12 M=0.7 VJ=0.36 .MODEL Smod1a VSWITCH RON=.001 ROFF=100 VON=-6 VOFF=-4 .MODEL Smod1b VSWITCH RON=.001 ROFF=100 VON=-4 VOFF=-6 .MODEL Smod2a VSWITCH RON=.001 ROFF=100 VON=-1.5 VOFF=1.5 .MODEL Smod2b VSWITCH RON=.001 ROFF=100 VON=1.5 VOFF=-1.5 .MODEL Smod3 VSWITCH RON=0.1 ROFF=90 VON=4.5 VOFF=25 .MODEL Rmod1 RES (TC1=8E-3 TC2=1.8E-5) .ENDS ZVN2120G * *$ * *ZETEX ZVN3310A Spice Model v1.1 Last Revised 3/5/00 * .SUBCKT ZVN3310A 3 4 5 * NODES: DRAIN GATE SOURCE M1 3 2 5 5 MOD1 RG 4 2 356 RL 3 5 1E8 C1 2 5 21.5P C2 3 2 2.5P D1 5 3 DIODE1 * .MODEL MOD1 NMOS VTO=1.736 RS=2.147 RD=1.682 IS=1E-15 KP=0.157 +CBD=25.5P PB=1 .MODEL DIODE1 D IS=6.12E-13 RS=.629 .ENDS ZVN3310A * *$ * *ZETEX ZVN3310F Spice Model v1.1 Last Revised 3/5/00 * .SUBCKT ZVN3310F 3 4 5 * NODES: DRAIN GATE SOURCE M1 3 2 5 5 MOD1 RG 4 2 356 RL 3 5 1E8 C1 2 5 21.5P C2 3 2 2.5P D1 5 3 DIODE1 * .MODEL MOD1 NMOS VTO=1.736 RS=2.147 RD=1.682 IS=1E-15 KP=0.157 +CBD=25.5P PB=1 .MODEL DIODE1 D IS=6.12E-13 RS=.629 .ENDS ZVN3310F * *$ * *ZETEX ZVN3320F Spice Model v1.0 Last Revised 27/5/02 * .SUBCKT ZVN3320F 3 4 5 * ----connections---- D G S * M1 6 2 8 8 MOSMOD M2 6 2 8 8 MOSMODS RG 4 2 190 RIN 2 8 200E6 RD 3 6 RDSMOD 18 RS 8 5 RDSMOD 1.5 RL 3 5 35E6 C1 2 8 6.5E-12 *C2 2 3 1E-12 C3 15 14 3.8E-12 C4 16 8 5.3E-12 D1 5 3 DMOD1 D2 17 3 DMOD2 S1 2 15 13 14 SMOD1a S2 13 15 13 14 SMOD1b S3 16 13 8 13 SMOD2a S4 16 2 8 13 SMOD2b Egs1 2 17 2 8 1 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 .MODEL MOSMOD NMOS VTO=1.55 IS=1E-15 KP=0.07 CBD=39E-12 PB=1 LAMBDA=4.9E-3 .MODEL MOSMODS NMOS VTO=0.8 IS=1E-15 KP=0.007 PB=1 .MODEL DMOD1 D IS=3E-8 RS=.17 N=1.95 TT=1e-9 BV=220 IBV=1E-3 .MODEL DMOD2 D CJO=1.8E-12 IS=1E-30 N=10 .MODEL SMOD1a VSWITCH RON=1e-2 ROFF=1e4 VON=1 VOFF=-1 .MODEL SMOD1b VSWITCH RON=1e-2 ROFF=1e4 VON=-1 VOFF=1 .MODEL SMOD2a VSWITCH RON=1e2 ROFF=1e4 VON=1.5 VOFF=3.5 .MODEL SMOD2b VSWITCH RON=1e-2 ROFF=1e4 VON=3.5 VOFF=1.5 .MODEL RDSMOD RES (TC1=7E-3 TC2=4.2E-5) .ENDS ZVN3320F * *$ * *ZETEX ZVN4210A Spice Model v1.1 Last Revised 3/5/00 * .SUBCKT ZVN4210A 3 4 5 * Nodes D G S M1 3 2 5 5 MOD1 RG 4 2 401.5 RL 3 5 1E7 C1 2 5 61.5P C2 3 2 3.5P D1 5 3 DIODE1 * .MODEL MOD1 NMOS VTO=1.922 RS=0.858 RD=0.2025 IS=1E-15 KP=2.082 +CBD=108P PB=1 LAMBDA=0 .MODEL DIODE1 D IS=1.10461E-12 N=1.0114 RS=0.166 .ENDS ZVN4210A * *$ * *ZETEX ZVN4210G Spice Model v1.1 Last Revised 3/5/00 * .SUBCKT ZVN4210G 3 4 5 * Nodes D G S M1 3 2 5 5 MOD1 RG 4 2 401.5 RL 3 5 1E7 C1 2 5 61.5P C2 3 2 3.5P D1 5 3 DIODE1 * .MODEL MOD1 NMOS VTO=1.922 RS=0.858 RD=0.2025 IS=1E-15 KP=2.082 +CBD=108P PB=1 LAMBDA=0 .MODEL DIODE1 D IS=1.10461E-12 N=1.0114 RS=0.166 .ENDS ZVN4210G * *$ * *ZETEX ZVN4310A Spice Model v1.1 Last Revised 8/2/02 * .SUBCKT ZVN4310A 3 4 5 *NODES: DRAIN GATE SOURCE M1 3 2 5 5 MOD1 RG 4 2 82 RL 3 5 1E7 C1 2 5 200E-12 C2 3 2 13.5E-12 D1 5 3 DIODE1 * .MODEL MOD1 NMOS VTO=2.555 RS=0.2068 RD=0.1665 IS=1E-15 KP=5.02 +CBD=288E-12 PB=1 LAMBDA=0 .MODEL DIODE1 D IS=9.759E-13 N=1.02476 RS=0.0844 .ENDS ZVN4310A * *$ * *ZETEX ZVN4310G Spice Model v1.1 Last Revised 8/2/02 * .SUBCKT ZVN4310G 3 4 5 *NODES: DRAIN GATE SOURCE M1 3 2 5 5 MOD1 RG 4 2 82 RL 3 5 1E7 C1 2 5 200E-12 C2 3 2 13.5E-12 D1 5 3 DIODE1 * .MODEL MOD1 NMOS VTO=2.555 RS=0.2068 RD=0.1665 IS=1E-15 KP=5.02 +CBD=288E-12 PB=1 LAMBDA=0 .MODEL DIODE1 D IS=9.759E-13 N=1.02476 RS=0.0844 .ENDS ZVN4310G * *$ * *ZETEX ZVN4424A Spice Model v1.2 Last Revised 20/3/01 * .SUBCKT ZVN4424A 3 4 5 *------connections-------D-G-S M1 6 2 8 8 N4424AM M2 6 2 8 8 N4424AMS RG 4 2 9 RD 3 6 3.6 RS 8 5 0.15 RL 3 5 240E6 C1 2 8 137E-12 C2 2 3 15E-12 C3 15 14 385E-12 C4 16 8 220E-12 D1 5 3 N4424AD S1 2 15 13 14 SMOD1 S2 13 15 14 13 SMOD1 S3 16 13 13 8 SMOD2 S4 16 2 8 13 SMOD2 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 .MODEL N4424AM NMOS VTO=1.3 IS=1E-15 KP=0.85 +CBD=66.2E-12 PB=1 .MODEL N4424AMS NMOS VTO=.86 IS=1E-15 KP=0.0085 +CBD=.66E-12 PB=1 .MODEL N4424AD D IS=5.516E-13 RS=.2084 N=1.0078 .MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=1.5 VOFF=1 .MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=-0.5 VOFF=-2.5 .ENDS ZVN4424A * *$ * *ZETEX ZVN4424G Spice Model v1.2 Last Revised 20/3/01 * .SUBCKT ZVN4424G 3 4 5 *------connections-------D-G-S M1 6 2 8 8 N4424AM M2 6 2 8 8 N4424AMS RG 4 2 9 RD 3 6 3.6 RS 8 5 0.15 RL 3 5 240E6 C1 2 8 137E-12 C2 2 3 15E-12 C3 15 14 385E-12 C4 16 8 220E-12 D1 5 3 N4424AD S1 2 15 13 14 SMOD1 S2 13 15 14 13 SMOD1 S3 16 13 13 8 SMOD2 S4 16 2 8 13 SMOD2 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 .MODEL N4424AM NMOS VTO=1.3 IS=1E-15 KP=0.85 +CBD=66.2E-12 PB=1 .MODEL N4424AMS NMOS VTO=.86 IS=1E-15 KP=0.0085 +CBD=.66E-12 PB=1 .MODEL N4424AD D IS=5.516E-13 RS=.2084 N=1.0078 .MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=1.5 VOFF=1 .MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=-0.5 VOFF=-2.5 .ENDS ZVN4424G * *$ * *ZETEX ZVN4525E6 Spice Model v1.0 Last Revised 4/8/2004 * .SUBCKT ZVN4525E6 3 4 5 *------connections-------D-G-S M1 6 20 8 8 MOSMOD1 M2 6 20 8 8 MOSMOD2 RG 4 2 7 RIN 2 8 200E6 RD 3 6 RMOD1 4.8 RS 8 5 RMOD1 0.2 RL 3 5 250E6 C1 2 8 80E-12 C2 2 3 12E-12 C3 15 14 175E-12 C4 16 8 175E-12 D1 5 3 DMOD1 S1 2 15 14 13 SMOD1a S2 13 15 14 13 SMOD1b S3 16 13 13 8 SMOD2a S4 16 2 13 8 SMOD2b Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 Egt1 2 20 21 5 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 RMOD2 1 .MODEL MOSMOD1 NMOS VTO=1.3 IS=1E-15 KP=0.46 .MODEL MOSMOD2 NMOS VTO=.86 IS=1E-15 KP=0.0046 .MODEL DMOD1 D IS=4.14E-13 RS=.278 N=1.0078 CJO=130E-12 .MODEL SMOD1a VSWITCH RON=.01 ROFF=1e3 VON=-1.7 VOFF=2.75 .MODEL SMOD1b VSWITCH RON=.01 ROFF=1e3 VON=2.75 VOFF=-1.7 .MODEL SMOD2a VSWITCH RON=.01 ROFF=1e3 VON=-1.5 VOFF=-3.5 .MODEL SMOD2b VSWITCH RON=.01 ROFF=1e3 VON=-3.5 VOFF=-1.5 .MODEL RMOD1 RES (TC1=8.9e-3 TC2=3e-5) .MODEL RMOD2 RES (TC1=-2.5e-3 TC2=3.3e-6) .ENDS * *$ * *ZETEX ZVN4525G Spice Model v1.0 Last Revised 21/05/2004 * .SUBCKT ZVN4525G 3 4 5 *------connections-------D-G-S M1 6 20 8 8 MOSMOD1 M2 6 20 8 8 MOSMOD2 RG 4 2 7 RIN 2 8 200E6 RD 3 6 RMOD1 4.8 RS 8 5 RMOD1 0.2 RL 3 5 250E6 C1 2 8 80E-12 C2 2 3 12E-12 C3 15 14 175E-12 C4 16 8 175E-12 D1 5 3 DMOD1 S1 2 15 14 13 SMOD1a S2 13 15 14 13 SMOD1b S3 16 13 13 8 SMOD2a S4 16 2 13 8 SMOD2b Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 Egt1 2 20 21 5 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 RMOD2 1 .MODEL MOSMOD1 NMOS VTO=1.3 IS=1E-15 KP=0.46 .MODEL MOSMOD2 NMOS VTO=.86 IS=1E-15 KP=0.0046 .MODEL DMOD1 D IS=4.14E-13 RS=.278 N=1.0078 CJO=130E-12 .MODEL SMOD1a VSWITCH RON=.01 ROFF=1e3 VON=-1.7 VOFF=2.75 .MODEL SMOD1b VSWITCH RON=.01 ROFF=1e3 VON=2.75 VOFF=-1.7 .MODEL SMOD2a VSWITCH RON=.01 ROFF=1e3 VON=-1.5 VOFF=-3.5 .MODEL SMOD2b VSWITCH RON=.01 ROFF=1e3 VON=-3.5 VOFF=-1.5 .MODEL RMOD1 RES (TC1=8.9e-3 TC2=3e-5) .MODEL RMOD2 RES (TC1=-2.5e-3 TC2=3.3e-6) .ENDS * *$ * *ZETEX ZVN4525Z Spice Model v1.0 Last Revised 4/8/2004 * .SUBCKT ZVN4525Z 3 4 5 *------connections-------D-G-S M1 6 20 8 8 MOSMOD1 M2 6 20 8 8 MOSMOD2 RG 4 2 7 RIN 2 8 200E6 RD 3 6 RMOD1 4.8 RS 8 5 RMOD1 0.2 RL 3 5 250E6 C1 2 8 80E-12 C2 2 3 12E-12 C3 15 14 175E-12 C4 16 8 175E-12 D1 5 3 DMOD1 S1 2 15 14 13 SMOD1a S2 13 15 14 13 SMOD1b S3 16 13 13 8 SMOD2a S4 16 2 13 8 SMOD2b Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 Egt1 2 20 21 5 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 RMOD2 1 .MODEL MOSMOD1 NMOS VTO=1.3 IS=1E-15 KP=0.46 .MODEL MOSMOD2 NMOS VTO=.86 IS=1E-15 KP=0.0046 .MODEL DMOD1 D IS=4.14E-13 RS=.278 N=1.0078 CJO=130E-12 .MODEL SMOD1a VSWITCH RON=.01 ROFF=1e3 VON=-1.7 VOFF=2.75 .MODEL SMOD1b VSWITCH RON=.01 ROFF=1e3 VON=2.75 VOFF=-1.7 .MODEL SMOD2a VSWITCH RON=.01 ROFF=1e3 VON=-1.5 VOFF=-3.5 .MODEL SMOD2b VSWITCH RON=.01 ROFF=1e3 VON=-3.5 VOFF=-1.5 .MODEL RMOD1 RES (TC1=8.9e-3 TC2=3e-5) .MODEL RMOD2 RES (TC1=-2.5e-3 TC2=3.3e-6) .ENDS * *$ * *ZETEX ZVNL110A Spice Model v1.0 Last Revised 19/3/03 * .SUBCKT ZVNL110A 3 4 5 * D G S M1 21 22 23 23 MNL110a M2 21 22 23 23 MNL110b RG 4 22 120 RD 3 21 2 RS 5 23 1 RL 3 5 1E9 C1 22 5 55E-12 C2 3 22 5E-12 D1 5 3 DNL110a * .MODEL MNL110a NMOS VTO=2.1 IS=1E-15 KP=0.2 CBD=60E-12 PB=1 +LAMBDA=2.6E-3 .MODEL MNL110b NMOS VTO=0.95 RS=2 Rd=2 KP=0.05 PB=1 LAMBDA=2.6E-3 .MODEL DNL110a D IS=1E-12 RS=0.37 BV=105 .ENDS ZVNL110A * *$ * *ZETEX ZVNL110G Spice Model v1.0 Last Revised 19/3/03 * .SUBCKT ZVNL110G 3 4 5 * D G S M1 21 22 23 23 MNL110a M2 21 22 23 23 MNL110b RG 4 22 120 RD 3 21 2 RS 5 23 1 RL 3 5 1E9 C1 22 5 55E-12 C2 3 22 5E-12 D1 5 3 DNL110a * .MODEL MNL110a NMOS VTO=2.1 IS=1E-15 KP=0.2 CBD=60E-12 PB=1 +LAMBDA=2.6E-3 .MODEL MNL110b NMOS VTO=0.95 RS=2 Rd=2 KP=0.05 PB=1 LAMBDA=2.6E-3 .MODEL DNL110a D IS=1E-12 RS=0.37 BV=105 .ENDS ZVNL110G * *$ * *ZETEX ZVNL120A Spice Model v1.0 Last Revised 27/9/04 * .SUBCKT ZVNL120A 3 4 5 * D G S M1 21 2 23 23 Mmod1 M2 21 2 23 23 Mmod2 J1 24 25 21 Jmod RJ 25 23 1000 RG 4 22 90 RD1 3 24 Rmod1 2 RD2 21 24 Rmod1 20 RS 5 23 Rmod1 1 RL 3 5 1.5E9 RIN 22 5 2E9 C1 22 5 85E-12 C2 3 22 7E-12 D1 5 3 Dmod Igt 5 31 1 Rgt 31 32 Rmod2 1 Vgt 5 32 1 Egt 22 2 5 31 1 .MODEL Mmod1 NMOS VTO=1.7 IS=1E-15 KP=0.5 CBD=20E-12 PB=1 +LAMBDA=2.6E-3 .MODEL Mmod2 NMOS VTO=0.95 RS=2 Rd=2 KP=0.05 PB=1 LAMBDA=2.6E-3 .MODEL Jmod NJF Beta=15m Betatce=-.5 Lambda=50m Vto=-6.25 Vtotc=-2.5m .MODEL Dmod D IS=1E-12 RS=0.5 BV=205 .MODEL Rmod1 RES (TC1=9e-3 TC2=2.5E-5) .MODEL Rmod2 RES (TC1=2.4e-3 TC2=1E-6) .ENDS ZVNL120A * *$ * *ZETEX ZVNL120G Spice Model v1.0 Last Revised 27/9/04 * .SUBCKT ZVNL120G 3 4 5 * D G S M1 21 2 23 23 Mmod1 M2 21 2 23 23 Mmod2 J1 24 25 21 Jmod RJ 25 23 1000 RG 4 22 90 RD1 3 24 Rmod1 2 RD2 21 24 Rmod1 20 RS 5 23 Rmod1 1 RL 3 5 1.5E9 RIN 22 5 2E9 C1 22 5 85E-12 C2 3 22 7E-12 D1 5 3 Dmod Igt 5 31 1 Rgt 31 32 Rmod2 1 Vgt 5 32 1 Egt 22 2 5 31 1 .MODEL Mmod1 NMOS VTO=1.7 IS=1E-15 KP=0.5 CBD=20E-12 PB=1 +LAMBDA=2.6E-3 .MODEL Mmod2 NMOS VTO=0.95 RS=2 Rd=2 KP=0.05 PB=1 LAMBDA=2.6E-3 .MODEL Jmod NJF Beta=15m Betatce=-.5 Lambda=50m Vto=-6.25 Vtotc=-2.5m .MODEL Dmod D IS=1E-12 RS=0.5 BV=205 .MODEL Rmod1 RES (TC1=9e-3 TC2=2.5E-5) .MODEL Rmod2 RES (TC1=2.4e-3 TC2=1E-6) .ENDS ZVNL120G * *$ * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=16/10/2009 *VERSION=1 *PIN_ORDER D G S * .SUBCKT ZXMN0545G4 3 4 5 M1 6 20 8 8 MOSMOD M2 6 20 8 8 MOSMODS RG 4 2 55 RIN 2 8 200E6 RD 3 6 RMOD1 40 RS 8 5 RMOD1 2.5 RL 3 5 200E6 C1 2 8 160E-12 C2 17 3 2E-12 D1 5 3 DMOD1 D2 17 3 DMOD2 Egs1 2 17 2 8 1 Egt1 2 20 21 5 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 RMOD2 1 .MODEL MOSMOD NMOS VTO=2.26 IS=1E-15 KP=.59 CBD=15E-12 PB=1 LAMBDA=4.9E-3 .MODEL MOSMODS NMOS VTO=1.9 IS=1E-15 KP=0.02 PB=1 .MODEL DMOD1 D IS=2E-13 RS=10 N=1.01 IKF=3E-3 .MODEL DMOD2 D CJO=25E-12 IS=1E-30 N=10 .MODEL RMOD1 RES (TC1=8E-3 TC2=1.7E-5) .MODEL RMOD2 RES (TC1=-2.5E-3 TC2=3.3E-6) .ENDS * *$ *DIODES_INC_SPICE_MODEL ZXMN10A07F N-channel MOSFET *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=18Dec2014 *VERSION=1 .SUBCKT ZXMN10A07F 10 20 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 400E-3 RS 23 3 Rmod1 200E-3 RG 20 22 2.6 RIN 20 23 2E11 RDS 10 23 6E9 CGS 2 3 105E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 80E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 0.0015 LS 30 23 1n .MODEL Nmod1 NMOS (LEVEL=3 VTO=4.15 TOX=10.7E-8 NSUB=1.2E+17 KP=4.2 NFS=5E+11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 60E-12 VJ = 0.5 M = 0.43) .MODEL DSUB D (IS = .02E-10 N=1.1 RS=0.04 BV=105 CJO=33E-12 VJ=0.42 M=0.5 TT=11E-9 TRS1=3E-3 IKF=.4) .MODEL DLIM D (IS=100U N=1) .MODEL Rmod1 RES (TC1=3e-3 TC2=6E-6) .ENDS .SIMULATOR DEFAULT * (c) 2014 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL ZXMN10A07Z N-channel MOSFET *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=1Jul2014 *VERSION=1 .SUBCKT ZXMN10A07Z 10 20 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 400E-3 RS 23 3 Rmod1 200E-3 RG 20 22 2.6 RIN 20 23 2E11 RDS 10 23 6E9 CGS 2 3 105E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 80E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 0.0015 LS 30 23 1n .MODEL Nmod1 NMOS (LEVEL=3 VTO=4.15 TOX=10.7E-8 NSUB=1.2E+17 KP=4.2 NFS=5E+11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 60E-12 VJ = 0.5 M = 0.43) .MODEL DSUB D (IS = .02E-10 N=1.1 RS=0.04 BV=105 CJO=33E-12 VJ=0.42 M=0.5 TT=11E-9 TRS1=3E-3 IKF=.4) .MODEL DLIM D (IS=100U N=1) .MODEL Rmod1 RES (TC1=3e-3 TC2=6E-6) .ENDS *ZETEX ZXMN10A08DN8 Spice Model v2.0 Last Revised 21/2/05 * .SUBCKT ZXMN10A08DN8 30 40 50 *------connections-------D-G-S M1 6 2 5 5 Nmod L=1E-6 W=0.6 M2 5 2 5 6 Pmod L=1.5E-6 W=0.45 RG 4 2 3.2 RIN 2 5 1E12 RD 3 6 Rdmod 0.14 RL 6 5 10E9 C1 2 5 30E-12 C2 3 4 10E-12 D1 5 3 Dbodymod LD 3 30 1.5E-9 LG 4 40 1.2E-9 LS 5 50 1.2E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=5E-8 NSUB=2E17 VTO=4.05 +KP=18E-5 RS=.07 NFS=2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=15E-8 NSUB=2E15 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=2E-12 RS=.02 IKF=0.06 TRS1=1.5e-3 +CJO=120e-12 BV=101) .MODEL Rdmod RES (TC1=9.5e-3 TC2=2.5E-5) .ENDS ZXMN10A08DN8 * *$ * *ZETEX ZXMN10A08E6 Spice Model v2.0 Last Revised 21/2/05 * .SUBCKT ZXMN10A08E6 30 40 50 *------connections-------D-G-S M1 6 2 5 5 Nmod L=1E-6 W=0.6 M2 5 2 5 6 Pmod L=1.5E-6 W=0.45 RG 4 2 3.2 RIN 2 5 1E12 RD 3 6 Rdmod 0.14 RL 6 5 10E9 C1 2 5 30E-12 C2 3 4 10E-12 D1 5 3 Dbodymod LD 3 30 0.3E-9 LG 4 40 1.9E-9 LS 5 50 1.9E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=5E-8 NSUB=2E17 VTO=4.05 +KP=18E-5 RS=.07 NFS=2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=15E-8 NSUB=2E15 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=2E-12 RS=.02 IKF=0.06 TRS1=1.5e-3 +CJO=120e-12 BV=101) .MODEL Rdmod RES (TC1=9.5e-3 TC2=2.5E-5) .ENDS ZXMN10A08E6 * *$ * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=25/02/09 *VERSION=1 *PIN_ORDER D G S * .SUBCKT ZXMN10A08G 1 2 3 M11 20 21 22 22 Nnmod1 L=1E-6 W=0.6 M12 22 21 22 20 Pnmod1 L=1.5E-6 W=0.45 RG1 21 27 3.2 RIN1 21 22 1E12 RD1 20 24 Rnmod1 0.14 RS1 22 23 1E-6 RL1 23 24 10E9 C11 21 22 65E-12 C12 20 21 10E-12 D1 23 24 Dnmod1 LD1 1 24 1.0E-9 LG1 2 27 2.3E-9 LS1 3 23 2.3E-9 .MODEL Nnmod1 NMOS (LEVEL=3 TOX=5E-8 NSUB=2E17 VTO=4.05 +KP=18E-5 RS=.07 NFS=2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pnmod1 PMOS (LEVEL=3 TOX=15E-8 NSUB=2E15 +TPG=-1 IS=1E-15 N=10) .MODEL Dnmod1 D (IS=2E-12 RS=.02 IKF=0.06 TRS1=1.5e-3 +CJO=120e-12 BV=110) .MODEL Rnmod1 RES (TC1=9.5e-3 TC2=2.5E-5) .ENDS ZXMN10A08G * *$ *ZETEX ZXMN10A09K Spice Model v2.0 Last Revised 21/2/05 * .SUBCKT ZXMN10A09K 30 40 50 *------connections-------D-G-S M1 6 2 5 5 Nmod L=1E-6 W=1.7 M2 5 2 5 6 Pmod L=1.5E-6 W=1.27 RG 4 2 0.7 RIN 2 5 1E12 RD 3 6 Rdmod 0.19 RL 6 5 10E9 C1 2 5 85E-12 C2 3 4 28E-12 D1 5 3 Dbodymod LD 3 30 1.3E-9 LG 4 40 2.4E-9 LS 5 50 2.4E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=5E-8 NSUB=2E17 VTO=3.45 +KP=2.5E-5 RS=.0053 NFS=2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=15E-8 NSUB=2E15 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=5.6E-12 RS=.016 IKF=0.095 TRS1=1.5e-3 +CJO=338e-12 BV=101) .MODEL Rdmod RES (TC1=7e-3 TC2=2.5E-5) .ENDS ZXMN10A09K * *$ * *ZETEX ZXMN10A11G Spice Model v2.0 Last Revised 11/2/05 * * .SUBCKT ZXMN10A11G 30 40 50 *------connections-------D-G-S M1 6 2 5 5 Nmod L=1E-6 W=0.48 M2 5 2 5 6 Pmod L=1.5E-6 W=0.31 RG 4 2 2.9 RIN 2 5 1E12 RD 3 6 Rdmod 0.28 RL 6 5 10E9 C1 2 5 21E-12 C2 3 4 6.9E-12 D1 5 3 Dbodymod LD 3 30 1E-9 LG 4 40 2.3E-9 LS 5 50 2.3E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=5E-8 NSUB=2E17 VTO=3.22 +KP=1.42E-5 RS=.023 NFS=2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=15E-8 NSUB=2E15 TPG=-1 +IS=1E-15 N=10) .MODEL Dbodymod D (IS=1.6E-12 RS=0.03 IKF=0.047 TRS1=1.5e-3 +CJO=83e-12 BV=101) .MODEL Rdmod RES (TC1=7e-3 TC2=2.5E-5) .ENDS ZXMN10A11G * *$ * *ZETEX ZXMN10A11K Spice Model v2.0 Last Revised 24/10/07 * * .SUBCKT ZXMN10A11K 30 40 50 *------connections-------D-G-S M1 6 2 5 5 Nmod L=1E-6 W=0.48 M2 5 2 5 6 Pmod L=1.5E-6 W=0.31 RG 4 2 2.9 RIN 2 5 1E12 RD 3 6 Rdmod 0.28 RL 6 5 10E9 C1 2 5 21E-12 C2 3 4 6.9E-12 D1 5 3 Dbodymod LD 3 30 1.3E-9 LG 4 40 2.4E-9 LS 5 50 2.4E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=5E-8 NSUB=2E17 VTO=3.22 +KP=1.42E-5 RS=.023 NFS=2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=15E-8 NSUB=2E15 TPG=-1 +IS=1E-15 N=10) .MODEL Dbodymod D (IS=1.6E-12 RS=0.03 IKF=0.047 TRS1=1.5e-3 +CJO=83e-12 BV=101) .MODEL Rdmod RES (TC1=7e-3 TC2=2.5E-5) .ENDS ZXMN10A11K * *$ * *ZETEX ZXMN10A25G Spice Model v1.0 Last Revised 24/10/07 * .SUBCKT ZXMN10A25G 30 40 50 *------connections-------D-G-S M1 6 2 5 5 Nmod L=1E-6 W=1.75 M2 5 2 5 6 Pmod L=1.5E-6 W=1.3 RG 4 2 1.5 RIN 2 5 1E12 RD 3 6 Rdmod 0.08 RL 3 5 10E9 C1 2 5 200E-12 D1 5 3 Dbodymod LD 3 30 1E-9 LG 4 40 2.3E-9 LS 5 50 2.3E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=10E-8 NSUB=1E17 VTO=3.7 +KP=2E-5 RS=0.01 NFS=7e10 KAPPA=0.06 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=10E-8 NSUB=2E15 TPG=-1 +IS=1E-15 N=10) .MODEL Dbodymod D (IS=1E-12 RS=.025 TRS1=1.5e-3 +CJO=240e-12 VJ=0.6 M=0.54 TT=5e-9 BV=101) .MODEL Rdmod RES (TC1=7.5e-3 TC2=2.3E-5) .ENDS ZXMN10A25G * *$ * *ZETEX ZXMN10A25K Spice Model v1.0 Last Revised 24/10/07 * .SUBCKT ZXMN10A25K 30 40 50 *------connections-------D-G-S M1 6 2 5 5 Nmod L=1E-6 W=1.75 M2 5 2 5 6 Pmod L=1.5E-6 W=1.3 RG 4 2 1.5 RIN 2 5 1E12 RD 3 6 Rdmod 0.08 RL 3 5 10E9 C1 2 5 200E-12 D1 5 3 Dbodymod LD 3 30 1.3E-9 LG 4 40 2.4E-9 LS 5 50 2.4E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=10E-8 NSUB=1E17 VTO=3.7 +KP=2E-5 RS=0.01 NFS=7e10 KAPPA=0.06 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=10E-8 NSUB=2E15 TPG=-1 +IS=1E-15 N=10) .MODEL Dbodymod D (IS=1E-12 RS=.025 TRS1=1.5e-3 +CJO=240e-12 VJ=0.6 M=0.54 TT=5e-9 BV=101) .MODEL Rdmod RES (TC1=7.5e-3 TC2=2.3E-5) .ENDS ZXMN10A25K * *$ * *ZETEX ZXMN10B08E6 Spice Model v2.0 Last Revised 22/2/05 * .SUBCKT ZXMN10B08E6 30 40 50 *------connections-------D-G-S M1 6 2 5 5 Nmod L=1E-6 W=0.75 M2 5 2 5 6 Pmod L=1.5E-6 W=0.75 RG 4 2 1 RIN 2 5 1E12 RD 3 6 Rdmod 0.19 RL 3 5 10E9 C1 2 5 100E-12 D1 5 3 Dbodymod LD 3 30 0.3E-9 LG 4 40 1.9E-9 LS 5 50 1.9E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=8E-8 NSUB=2E17 VTO=3.12 +KP=2.2E-5 RS=.015 NFS=6E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=8E-8 NSUB=1E15 TPG=-1 +IS=1E-15 N=10) .MODEL Dbodymod D (IS=2E-12 RS=.025 IKF=0.06 TRS1=1.5e-3 +CJO=300e-12 TT=5e-9 BV=101) .MODEL Rdmod RES (TC1=7e-3 TC2=2.5E-5) .ENDS * *$ * *SRC=BSS123W;DI_BSS123W;MOSFETs N;Enh;100V 0.170A 1.00ohms Diodes Inc. MOSFET .MODEL DI_BSS123W NMOS( LEVEL=1 VTO=1.40 KP=0.805 GAMMA=1.74 + PHI=.75 LAMBDA=41.8u RD=0.140 RS=0.140 + IS=85.0f PB=0.800 MJ=0.460 CBD=39.5p + CBS=47.4p CGSO=24.0n CGDO=20.0n CGBO=246n ) * -- Assumes default L=100U W=100U -- *ZETEX BSS123 Spice Model v1.0 Last Revision 27/3/06 * .SUBCKT BSS123/ZTX 3 4 5 * NODES: DRAIN GATE SOURCE M1 3 2 5 5 MOD1 RG 4 2 356 RL 3 5 1E8 C1 2 5 21.5P C2 3 2 2.5P D1 5 3 DIODE1 * .MODEL MOD1 NMOS VTO=1.736 RS=2.147 RD=1.682 IS=1E-15 KP=0.157 +CBD=25.5P PB=1 .MODEL DIODE1 D IS=6.12E-13 RS=.629 .ENDS BSS123 * *$ * *DIODES_INC_SPICE_MODEL ZXMN20B28K *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=23Apr2014 *VERSION=1 *PINS 10=D 20=G 30=S .SUBCKT ZXMN20B28K 10 20 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 530E-3 RS 23 3 Rmod1 120E-3 RG 20 22 20 RIN 20 23 2E11 RDS 10 23 6E9 CGS 2 3 450E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 800E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 0.00001 LS 30 23 3n .MODEL Nmod1 NMOS (LEVEL=3 VTO=2.2 TOX=5E-8 NSUB=1E+15 KP=150 NFS=15E+11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 130E-12 VJ = 0.5 M = 0.43 T_ABS=25) .MODEL DSUB D (IS = 1.5E-12 N=1 RS=0.01 BV=210 IKF=.12 CJO=350E-12 VJ=0.42 M=0.5 TT=130E-9 TRS1=1.2E-3) .MODEL DLIM D (IS=100U N=1 T_ABS=25) .MODEL Rmod1 RES (TC1=1.2e-3 TC2=8E-6) .ENDS * (c) 2014 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL ZXMN15A25K *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=20Dec2011 *VERSION=1 *PINS 10=D 20=G 30=S .SUBCKT zxmn15a27k 10 20 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 300E-3 RS 23 3 Rmod1 180E-3 RG 20 22 2 RIN 20 23 2E11 RDS 10 23 6E9 CGS 2 3 150E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 240E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 0.001 LS 30 23 3n .MODEL Nmod1 NMOS (LEVEL=3 VTO=3.2 TOX=20E-8 NSUB=2.8E+15 KP=9.5 NFS=1E+11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 140E-12 VJ = 0.5 M = 0.43 T_ABS=25) .MODEL DSUB D (IS = 1.85E-12 N=1.085 RS=0.022 BV=155 CJO=330E-12 VJ=0.42 M=0.5 TT=150E-9 TRS1=2.6E-3) .MODEL DLIM D (IS=100U N=1 T_ABS=25) .MODEL Rmod1 RES (TC1=8e-3 TC2=8E-6) .ENDS .SIMULATOR DEFAULT *---------- BSS127SSN Spice Model ---------- .SUBCKT BSS127SSN 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 84.22 RS 30 3 0.001 RG 20 2 29 CGS 2 3 1.958E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 1E-012 VTO = 3.419 + TOX = 6.8E-008 NSUB = 1E+016 KP = 0.127 U0 = 400 KAPPA = 1.044E-015 .MODEL DCGD D CJO = 1.137E-011 VJ = 0.9051 M = 0.89 .MODEL DSUB D IS = 2.294E-010 N = 1.601 RS = 0.1079 BV = 690 + CJO = 1.956E-011 VJ = 1.514 M = 0.8171 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes BSS127SSN Spice Model v1.1 Last Revised 2014/8/5 *---------- BSS127S Spice Model ---------- .SUBCKT BSS127S 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 84.22 RS 30 3 0.001 RG 20 2 29 CGS 2 3 1.958E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 1E-012 VTO = 3.419 + TOX = 6.8E-008 NSUB = 1E+016 KP = 0.127 U0 = 400 KAPPA = 1.044E-015 .MODEL DCGD D CJO = 1.137E-011 VJ = 0.9051 M = 0.89 .MODEL DSUB D IS = 2.294E-010 N = 1.601 RS = 0.1079 + BV = 690 CJO = 1.956E-011 VJ = 1.514 M = 0.8171 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes BSS127S Spice Model v1.1 Last Revised 2014/8/5 *---------- DMG4N65CT Spice Model ---------- .SUBCKT DMG4N65CT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.901 RS 30 3 0.001 RG 20 2 2.4 CGS 2 3 8.859E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 1E-012 VTO = 4.347 + TOX = 6E-008 NSUB = 1E+016 KP = 4.509 U0 = 400 KAPPA = 13.05 .MODEL DCGD D CJO = 3.337E-010 VJ = 0.6 M = 0.9816 .MODEL DSUB D IS = 2.232E-010 N = 1.338 RS = 0.002184 + BV = 700 CJO = 1.208E-009 VJ = 0.4984 M = 0.83 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG4N65CT Spice Model v1.0 Last Revised 2014/5/9 *---------- DMN10H120SFG Spice Model ---------- .SUBCKT DMN10H120SFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.05782 RS 30 3 0.001 RG 20 2 1.86 CGS 2 3 5.654E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.75E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.378 + TOX = 6E-008 NSUB = 1E+016 KP = 20 U0 = 400 KAPPA = 1 .MODEL DCGD D CJO = 2.382E-010 VJ = 0.7 M = 0.7 .MODEL DSUB D IS = 9.862E-009 N = 1.554 RS = 4.441E-010 BV = 125 CJO = 4.436E-010 VJ = 0.7 M = 0.7033 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN10H120SFG Spice Model v1.0 Last Revised 2014/12/09 *---------- DMN30H4D0LFDE Spice Model ---------- .SUBCKT DMN30H4D0LFDE 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 2.239 RS 30 3 0.001 RG 20 2 1.53 CGS 2 3 2E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.9E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.514 + TOX = 6E-008 NSUB = 1E+016 KP = 3.1 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.204E-010 VJ = 0.1 M = 0.5744 .MODEL DSUB D IS = 5.479E-008 N = 1.755 RS = 0.04325 BV = 334 CJO = 1.2E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN30H4D0LFDE Spice Model v1.0M Last Revised 2016/6/16 *---------- DMN24H3D5L Spice Model ---------- .SUBCKT DMN24H3D5L 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.5 RS 30 3 0.001 RG 20 2 3.86 CGS 2 3 2.2E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.384 + TOX = 6E-008 NSUB = 1E+016 KP = 3.501 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.657E-010 VJ = 0.6 M = 0.7947 .MODEL DSUB D IS = 7.117E-010 N = 1.369 RS = 0.04982 BV = 280 CJO = 1E-015 VJ = 0.6 M = 0.8 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN24H3D5L Spice Model v1.0M Last Revised 2016/3/14 *---------- DMN10H170SVTQ Spice Model ---------- .SUBCKT DMN10H170SVTQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1083 RS 30 3 1E-008 RG 20 2 1.37 CGS 2 3 1.07E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.715 + TOX = 6E-008 NSUB = 1E+016 KP = 20.25 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 2.221E-010 VJ = 0.1 M = 0.4408 .MODEL DSUB D IS = 2.405E-010 N = 1.267 RS = 0.006864 BV = 116 CJO = 2.222E-010 VJ = 0.1225 M = 0.5115 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN10H170SVTQ Spice Model v1.0 Last Revised 2015/9/30 *---------- DMNH10H028SK3Q Spice Model ---------- .SUBCKT DMNH10H028SK3Q 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02115 RS 30 3 1E-008 RG 20 2 1.82 CGS 2 3 2.134E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.675 + TOX = 6E-008 NSUB = 1E+016 KP = 72.57 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 4.731E-010 VJ = 1 M = 0.9082 .MODEL DSUB D IS = 2.476E-010 N = 1.172 RS = 0.003739 BV = 119 CJO = 2.226E-009 VJ = 1 M = 0.9133 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH10H028SK3Q Spice Model v1.0 Last Revised 2015/9/07 *---------- DMT10H015LFG Spice Model ---------- .SUBCKT DMT10H015LFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0122 RS 30 3 1E-008 RG 20 2 0.75 CGS 2 3 2.015E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.947 + TOX = 6E-008 NSUB = 1E+016 KP = 128.2 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 4.441E-010 VJ = 0.6602 M = 0.8033 .MODEL DSUB D IS = 2.272E-010 N = 1.181 RS = 0.001826 BV = 105 CJO = 1.15E-009 VJ = 1 M = 0.256 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT10H015LFG Spice Model v1.0 Last Revised 2015/9/14 *---------- DMT10H015LPS Spice Model ---------- .SUBCKT DMT10H015LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0122 RS 30 3 1E-008 RG 20 2 0.75 CGS 2 3 2.015E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.947 + TOX = 6E-008 NSUB = 1E+016 KP = 128.2 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 4.441E-010 VJ = 0.6602 M = 0.8033 .MODEL DSUB D IS = 2.272E-010 N = 1.181 RS = 0.001826 BV = 105 CJO = 1.15E-009 VJ = 1 M = 0.256 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT10H015LPS Spice Model v1.0 Last Revised 2015/9/14 *---------- DMJ70H1D3SI3 Spice Model ---------- .SUBCKT DMJ70H1D3SI3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.9496 RS 30 3 0.001 RG 20 2 3.52 CGS 2 3 3.31E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.304 + TOX = 6E-008 NSUB = 1E+016 KP = 2.467 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.213E-010 VJ = 0.8 M = 0.607 .MODEL DSUB D IS = 3.838E-010 N = 1.374 RS = 0.01098 BV = 700 CJO = 1.766E-009 VJ = 0.8 M = 0.6121 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMJ70H1D3SI3 Spice Model v1.0 Last Revised 2015/9/14 *---------- DMNH10H028SPSQ Spice Model ---------- .SUBCKT DMNH10H028SPSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02115 RS 30 3 1E-008 RG 20 2 1.82 CGS 2 3 2.134E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.675 + TOX = 6E-008 NSUB = 1E+016 KP = 72.57 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 4.731E-010 VJ = 1 M = 0.9082 .MODEL DSUB D IS = 2.476E-010 N = 1.172 RS = 0.003739 BV = 119 CJO = 2.226E-009 VJ = 1 M = 0.9133 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH10H028SPSQ Spice Model v1.0 Last Revised 2015/9/07 *---------- DMG4N60SK3 Spice Model ---------- .SUBCKT DMG4N60SK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.712 RS 30 3 0.001 RG 20 2 3.34 CGS 2 3 5.257E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.767 + TOX = 6E-008 NSUB = 1E+016 KP = 0.6613 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.457E-010 VJ = 0.6971 M = 0.8 .MODEL DSUB D IS = 2.293E-010 N = 1.33 RS = 0.005872 BV = 600 CJO = 7.577E-010 VJ = 0.7116 M = 0.8 TT=2.3E-007 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG4N60SK3 Spice Model v1.0 Last Revised 2015/11/10 *---------- DMJ70H1D3SJ3 Spice Model ---------- .SUBCKT DMJ70H1D3SJ3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.9496 RS 30 3 0.001 RG 20 2 3.52 CGS 2 3 3.31E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.304 + TOX = 6E-008 NSUB = 1E+016 KP = 2.467 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.213E-010 VJ = 0.8 M = 0.607 .MODEL DSUB D IS = 3.838E-010 N = 1.374 RS = 0.01098 BV = 700 CJO = 1.766E-009 VJ = 0.8 M = 0.6121 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMJ70H1D3SJ3 Spice Model v1.0 Last Revised 2015/9/14 *---------- DMN15H310SK3 Spice Model ---------- .SUBCKT DMN15H310SK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1731 RS 30 3 0.001 RG 20 2 0.98 CGS 2 3 3.848E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.1E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.651 + TOX = 6E-008 NSUB = 1E+016 KP = 11.81 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.862E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 3.094E-010 N = 1.262 RS = 0.01335 BV = 170 CJO = 2.22E-010 VJ = 0.6 M = 0.6149 TT=3.8E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN15H310SK3 Spice Model v1.0 Last Revised 2016/1/15 *---------- DMJ70H1D3SH3 Spice Model ---------- .SUBCKT DMJ70H1D3SH3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.9496 RS 30 3 0.001 RG 20 2 3.52 CGS 2 3 3.31E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.304 + TOX = 6E-008 NSUB = 1E+016 KP = 2.467 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.213E-010 VJ = 0.8 M = 0.607 .MODEL DSUB D IS = 3.838E-010 N = 1.374 RS = 0.01098 BV = 700 CJO = 1.766E-009 VJ = 0.8 M = 0.6121 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMJ70H1D3SH3 Spice Model v1.0 Last Revised 2015/9/14 *---------- DMT10H015LSS Spice Model ---------- .SUBCKT DMT10H015LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0122 RS 30 3 1E-008 RG 20 2 0.75 CGS 2 3 2.015E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.947 + TOX = 6E-008 NSUB = 1E+016 KP = 128.2 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 4.441E-010 VJ = 0.6602 M = 0.8033 .MODEL DSUB D IS = 2.272E-010 N = 1.181 RS = 0.001826 BV = 105 CJO = 1.15E-009 VJ = 1 M = 0.256 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT10H015LSS Spice Model v1.0 Last Revised 2015/9/14 *---------- DMT10H010LPS Spice Model ---------- .SUBCKT DMT10H010LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005481 RS 30 3 1E-006 RG 20 2 0.99 CGS 2 3 3.582E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.77E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.748 + TOX = 6E-008 NSUB = 1E+016 KP = 100.6 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 7.459E-010 VJ = 1 M = 0.5389 .MODEL DSUB D IS = 2.258E-010 N = 1.188 RS = 0.002508 BV = 114 CJO = 1.914E-009 VJ = 1 M = 0.2026 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT10H010LPS Spice Model v1.0 Last Revised 2015/7/15 *---------- DMT10H010LPS Spice Model ---------- .SUBCKT DMT10H010LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005481 RS 30 3 1E-006 RG 20 2 0.99 CGS 2 3 3.582E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.77E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.748 + TOX = 6E-008 NSUB = 1E+016 KP = 100.6 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 7.459E-010 VJ = 1 M = 0.5389 .MODEL DSUB D IS = 2.258E-010 N = 1.188 RS = 0.002508 BV = 114 CJO = 1.914E-009 VJ = 1 M = 0.2026 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT10H010LPS Spice Model v1.0 Last Revised 2015/7/15 *---------- DMT10H010LCT Spice Model ---------- .SUBCKT DMT10H010LCT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005481 RS 30 3 1E-006 RG 20 2 0.99 CGS 2 3 3.582E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.77E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.748 + TOX = 6E-008 NSUB = 1E+016 KP = 100.6 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 7.459E-010 VJ = 1 M = 0.5389 .MODEL DSUB D IS = 2.258E-010 N = 1.188 RS = 0.002508 BV = 114 CJO = 1.914E-009 VJ = 1 M = 0.2026 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT10H010LCT Spice Model v1.0 Last Revised 2015/10/13 *ZETEX BS107P Spice Model v1.1 Last Revised 04/10/2021 * .SUBCKT BS107P 3 4 5 * D G S M1 3 2 5 5 MN0124 RG 4 2 225 RL 3 5 2.4E7 C1 2 5 60E-12 C2 3 2 2E-12 D1 5 3 DN0124 * .MODEL MN0124 NMOS VTO=1.55 RS=1.6 RD=9 IS=1E-15 KP=1.077 CBD=36E-12 PB=1 LAMBDA=0 .MODEL DN0124 D IS=3.071E-12 N=1.026 RS=0.511 .ENDS BS107P * *$ * * (c) 2005 Zetex Semiconductors plc * * The copyright in these models and the designs embodied belong * to Zetex Semiconductors plc (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Zetex PLC, its distributors * or agents. * * Zetex Semiconductors plc, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *---------- DMNH10H028SCT Spice Model ---------- .SUBCKT DMNH10H028SCT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01799 RS 30 3 0.001 RG 20 2 1.8 CGS 2 3 2.196E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.538 + TOX = 6E-008 NSUB = 1E+016 KP = 51.62 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.277E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.515E-010 N = 1.179 RS = 0.001664 BV = 119 CJO = 1.202E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH10H028SCT Spice Model v1.0M Last Revised 2016/4/19 *---------- DMN10H700S Spice Model ---------- .SUBCKT DMN10H700S 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.5307 RS 30 3 0.001 RG 20 2 1.89 CGS 2 3 2.39E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.95E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.374 + TOX = 6E-008 NSUB = 1E+016 KP = 2.893 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.347E-011 VJ = 0.7808 M = 0.6 .MODEL DSUB D IS = 2.258E-010 N = 1.404 RS = 0.02857 BV = 117 CJO = 1E-015 VJ = 0.6 M = 0.6149 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN10H700S Spice Model v1.0M Last Revised 2016/4/19 *---------- DMTH10H010LCT Spice Model ---------- .SUBCKT DMTH10H010LCT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.003569 RS 30 3 0.001 RG 20 2 1.2 CGS 2 3 3.092E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.685 + TOX = 6E-008 NSUB = 1E+016 KP = 53.29 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.5E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.273E-010 N = 1.184 RS = 0.0002213 BV = 103 CJO = 2E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH10H010LCT Spice Model v1.0M Last Revised 2016/3/16 *---------- DMG4N60SCT Spice Model ---------- .SUBCKT DMG4N60SCT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1 RS 30 3 0.001 RG 20 2 3.09 CGS 2 3 5.393E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.626 + TOX = 6E-008 NSUB = 1E+016 KP = 0.4508 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.385E-010 VJ = 0.6 M = 0.8 .MODEL DSUB D IS = 2.344E-010 N = 1.337 RS = 0.005462 BV = 660 CJO = 6.251E-010 VJ = 0.6 M = 0.692 TT=1.2E-07 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes