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*---------- DMT36M4LDT Spice Model ----------

*Q1
.SUBCKT DMT36M4LDT_Q1 10 20 30 
* TERMINALS : D G S
* MODEL FORMAT : SPICE3
* Editor : Stan Li
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.003029 
RS 30 3 0.0001 
RG 20 2 1.04 
CGS 2 3 1.051E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 4.3E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.925 
+ TOX = 1E-007 NSUB = 1E+016 KP = 81.73 U0 = 750 KAPPA = 0.2 IS = 0 
.MODEL DCGD D CJO = 2.644E-010 VJ = 0.8 M = 0.6157 
.MODEL DSUB D IS = 1.004E-009 N = 1.337 RS = 0.003875 BV = 35.29 
+ CJO = 1.157E-009 VJ = 0.9 M = 0.2191 XTI = 0 
.MODEL DLIM D IS = 0.0001 
.ENDS

*Q2
.SUBCKT DMT36M4LDT_Q2 10 20 30 
* TERMINALS : D G S
* MODEL FORMAT : SPICE3
* Editor : Stan Li
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.003564 
RS 30 3 0.0001 
RG 20 2 0.92 
CGS 2 3 1.593E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 5.71E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.944 
+ TOX = 1E-007 NSUB = 1E+016 KP = 168.5 U0 = 750 KAPPA = 0.2 IS = 0 
.MODEL DCGD D CJO = 3.634E-010 VJ = 0.8 M = 0.644 
.MODEL DSUB D IS = 1.849E-009 N = 1.348 RS = 0.003367 BV = 35.29 
+ CJO = 1.724E-009 VJ = 0.9 M = 0.2132 XTI = 0 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes Spice Model v1.2 Last Revised 2025/01/22
*The model is an approximation of the device, and it may not show the true device performance under all conditions.
*The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet.