* DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *FMMT619 Spice model *SIMULATOR=SIMETRIX *ORIGIN=PH *DATE=09April2019 *VERSION=2 *#SIMETRIX .Model FMMT619 NPN ; ## Description ## ## Effect ## ; ## DC Forward Parameters ## + IS = 5.8032E-13 ; transport saturation current Controls Icbo and where hFE falls with high Ic + NF = 1.02 ; forward current emission coefficient + ISE = 1.5933E-13 ; base-emitter leakage saturation current Controls the fall in hFE that occurs at low Ic + NE = 1.4148 ; base-emitter leakage emission coefficient Controls Icbo and where hFE falls with high Ic. Controls the fall in hFE that occurs at low Ic + BF = 465 ; ideal maximum forward beta Controls peak forward hFE + IKF = 8 ; corner for forward-beta high-current roll-off Current where rollof occurs + NK = 0.8 ; high-current roll-off coefficient Slope of roll off + VAF = 84 ; forward Early voltage controls the variation of collector current with voltage when the transistor is operated in its linear region. ; ## DC Reverse Parameters ## + NR = 1.0006 ; reverse current emission coefficient + ISC = 5E-12 ; base-collector leakage saturation current Controls the fall of reverse hFE at low currents + NC = 1.6 ; base-collector leakage emission coefficient Controls the fall of reverse hFE at low currents + BR = 110 ; ideal maximum reverse beta Controls peak reverse hFE + IKR = 1.4 ; corner for reverse-beta high-current roll-off Current where rollof occurs + VAR = 51 ; reverse Early voltage the reverse version of VAF. ; ## DC Rb Parameters ## + RB = 14.5 ; zero-bias (maximum) base resistance + IRB = 8.00E-06 ; current at which Rb falls halfway to RBM + RBM = 0.2 ; minimum base resistance ; ## DC Re Parameters ## + RE = 0.05 ; emitter ohmic resistance ; ## DC Rc Parameters ## + RC = 0.0375 ; collector ohmic resistance ; ## AC base-emitter Parameters ## + CJE= 2.17E-10 ; base-emitter zero-bias p-n capacitance controls Cbe. + VJE = 0.75 ; base-emitter built-in potential + MJE = 0.33 ; base-emitter p-n grading factor ; ## AC base-collector Parameters ## + CJC = 4E-11 ; base-collector zero-bias p-n capacitance control Ccb and how it varies with Vcb. + VJC = 0.4347 ; base-collector built-in potential control Ccb and how it varies with Vcb. + MJC = 0.3708 ; base-collector p-n grading factor control Ccb and how it varies with Vcb. + XCJC = 1 ; fraction of CJC connected internally to Rb ; ## AC substrate Parameters ## + CJS = 0 ; substrate zero-bias p-n capacitance + VJS = 0.75 ; substrate p-n built-in potential + MJS = 0 ; substrate p-n grading factor ; ## AC Transit Time Parameters ## + TF = 780.0E-12 ; ideal forward transit time controls Ft and switching speeds. + XTF = 0 ; transit time bias dependence coefficient + VTF = 1E+20 ; transit time dependency on Vbc + ITF = 0 ; transit time dependency on Ic + PTF = 0 ; excess phase @ 1/(2p·TF)Hz + TR = 9.00E-09 ; ideal reverse transit time controls switching storage times. ; ##Temperature Parameters ## + XTB = 1.3 ; forward and reverse beta temperature coefficient controls temperature effects on hFE. Try 1.6 for NPN, 1.9 for PNP + XTI = 3 ; IS temperature effect exponent controls temperature effects on saturation current + RCO = 0 ; epitaxial region resistance + TRB1 = 0 ; RB temperature coefficient (linear) + TRB2 = 0 ; RB temperature coefficient (quadratic) + TRC1 = 0 ; RC temperature coefficient (linear) + TRC2 = 0 ; RC temperature coefficient (quadratic) + TRE1 = 0 ; RE temperature coefficient (linear) + TRE2 = 0 ; RE temperature coefficient (quadratic) + TRM1 = 0 ; RBM temperature coefficient (linear) + TRM2 = 0 ; RBM temperature coefficient (quadratic) * T_ABS = ; absolute temperature + T_MEASURED = 27 ; measured temperature * T_REL_GLOBAL = ; relative to current temperature + QUASIMOD = 1 ; quasi-saturation model flag for temperature dependence 1= Gamma, RCO, VO temp dependance 0n. 0=off. + CN = 2.42 ; quasi-saturation temperature coefficient for hole mobility defaults NPN 2.42, PNP 2.20 + D = 0.87 ; quasi-saturation temperature coefficient -hole carrier velocity defaults NPN 0.87, PNP 0.52 + FC = 0.5 ; forward-bias depletion capacitor coefficient + EG = 1.11 ; bandgap voltage (barrier height) + GAMMA = 1E-11 ; epitaxial region doping factor + ISS = 0 ; substrate p-n saturation current + NS = 1 ; substrate p-n emission coefficient + QCO = 0 ; epitaxial region charge factor ; ## Flicker Parameters ## + AF = 1 ; flicker noise exponent + KF = 0 ; flicker noise coefficient 0.0 + VG = 1.206 ; quasi-saturation extrapolated bandgap voltage at 0° K + VO = 10 ; carrier mobility knee voltage * (c) 2019 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL