* DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *DXTN3C100PS Spice model *SIMULATOR=SIMETRIX *ORIGIN=PH *DATE=30Jan2019 *VERSION=1 *#SIMETRIX .MODEL DXTN3C100PS NPN + IS=8.00E-13 ; transport saturation current (A) + NF=1.0 ; forward current emission coefficient + BF=265 ; ideal maximum forward beta + IKF=0.65 ; corner for forward beta high current roll off (A) + VAF=26 ; forward early voltage (V) + ISE=7E-14 ; base-emitter leakage saturation current (A) + NE=1.3 ; base-emitter leakage emission coefficient + NR=1.01 ; reverse current emission coefficient + BR=9 ; ideal maximum reverse beta + VAR=140.5 ; reverse Early voltage (V) + ISC=4e-14 ; base-collector leakage saturation current (A) + NC=1.1 ; base-collector leakage emission coefficient + RB=0 ; zero-bias (maximum) base resistance (Ohm) + RE=.03 ; emitter ohmic resistance (Ohm) + RC=.03 ; collector ohmic resistance (Ohm)3 + CJC=63E-12 ; base-collector zero-bias p-n capacitance (F) + MJC=0.38 ; base-collector p-n grading factor + VJC=0.45 ; base-collector built-in potential (V) + CJE=514E-12 ; base-emitter zero-bias p-n capacitance (F) + VJE=0.75 ; base-collector built-in potential (V) + TF=1.04E-9 ; ideal forward transit time (s) + TR=4e-9 ; ideal reverse transit time (s) + XTI=3.3 ; + XTB=1.45 ; + EG=1.17 ; + GAMMA=1E-11 ; *$ * (c) 2019 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL