* DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. ******************************************************************************************************************************* *SRC=LMN200B01;DI_LMN200B01_BJT;BJTs NPN; Si; 40.0V 0.600A 275MHz Diodes Inc. BJTs .MODEL DI_LMN200B01P_BJT NPN (IS=1.27p NF=1.00 BF=410 VAF=114 + IKF=60.7m ISE=47.7p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.150 RE=0.261 RB=1.04 RC=0.104 + XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=14.2p VJC=0.300 + MJC=0.300 TF=533p TR=84.1n EG=1.12 ) *SRC=CTA2N1P;DI_CTA2N1P_MOSFET;MOSFETs P;Enh;50.0V 0.130A 6.00ohms Diodes Inc. MOSFET .MODEL DI_CTA2N1P_MOSFET PMOS( LEVEL=1 VTO=-1.60 KP=25.0m GAMMA=1.98 + PHI=.75 LAMBDA=108u RD=0.840 RS=0.840 + IS=65.0f PB=0.800 MJ=0.460 CBD=64.2p + CBS=77.1p CGSO=144n CGDO=120n CGBO=341n ) * -- Assumes default L=100U W=100U -- ******************************************************************************************************************************* ---------------------------------------------------------------------------------------------------------------------------------------------------------------- *SRC=CTA2P1N;DI_CTA2P1N_BJT;BJTs PNP; Si; 40.0V 0.600A 200MHz Diodes Inc. BJTs .MODEL DI_CTA2P1N_BJT PNP (IS=60.4f NF=1.00 BF=410 VAF=114 + IKF=0.304 ISE=23.2p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.750 RE=0.261 RB=1.04 RC=0.104 + XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300 + MJC=0.300 TF=667p TR=84.1n EG=1.12 ) *SRC=CTA2P1N;DI_CTA2P1N_MOSFET;MOSFETs N;Enh;60.0V 0.115A 2.00ohms Didoes Inc. MOSFET .MODEL DI_CTA2P1N_MOSFET NMOS( LEVEL=1 VTO=1.50 KP=32.0m GAMMA=1.86 + PHI=.75 LAMBDA=40.0u RD=0.280 RS=0.280 + IS=57.5f PB=0.800 MJ=0.460 CBD=44.5p + CBS=53.4p CGSO=24.0n CGDO=20.0n CGBO=176n ) * -- Assumes default L=100U W=100U -- ----------------------------------------------------------