* DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *TITLE=ZXCT1030 MACROMODEL *ORIGIN=DZSL_AG_GS *SIMULATOR=DIODES, SIMETRIX and PSPICE *DATE=14th June 2010 *VERSION=1 *PIN_ORDER 1:VCC, 2:VS-, 3:VS+, 4:GND, 5:COMPIN, 6:REF, 7:OUT, 8:COMPOUT * .subckt ZXCT1030 VCC VS- VS+ GND COMPIN REF OUT COMPOUT * pins------------1--2----3---4---5------6---7----8 * *Voltage reference R1 REFG REF 34 V1 REFG GND 1.24 * * Current sense amplifier limited by supply voltage R2 GND VCC 58k ;quiescent current at 5V R3 VS- AIN- 100k ;input filter C1 VS+ AIN- 1p ;input filter G1 VS+ OUT VALUE={ max(V(VS+)-V(AIN-),0)/150*tanh ( 20*max(V(VS+)-1.1-V(OUT),0) ) } R4 OUT GND 1.5k ;output resistance * *Comparator with VS- undervoltage detection and limited by supply voltage E2 DELTA GND VALUE = { V(OUT)-V(COMPIN)+0.015*V(E3OUT) } R5 DELTA COMPINT 1k ; delay filter C2 COMPINT GND 150p ; delay filter E3 E3OUT GND VALUE={ 0.5*(1+tanh(V(COMPINT)*10000)) } E4 S1IN GND VALUE={ ( V(E3OUT)+tanh(20*max(2.1-V(VS-),0)) )*tanh(20*max(V(VCC)-2.1,0)) } * *Output transistor open collector S1 COMPOUT GND S1IN GND _S1 .MODEL _S1 VSWITCH Roff=10e6 Ron=300 Voff=0.25 Von=0.75 * .ends ZXCT1030 * * (c) 2010 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *