Diodes Incorporated
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ZXMS6006DG

60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET

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Description

The ZXMS6006DG is N channel enhancement mode self protected low side MOSFET with logic level input. It integrates over-temperature, over-current, over-voltage (active clamp) and ESD protected logic level functionality and is ideally suited to general purpose switching, driven from 3.3V or 5V microcontrollers, in harsh environments where standard MOSFETs are not rugged enough.

Application(s)

  • Lamp Driver
  • Motor Driver
  • Relay Driver
  • Solenoid Driver
  • Motor control applications

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive supports PPAP) Standard
Configuration Single
Polarity N
TAB Drain
BVDSS (V) 60
ID VIN = 5V (A) 2.8
PD (W) 3
RDS(ON) Max @ VIN (3V) (mΩ) 125
RDS(ON) Max @VIN (5V) (mΩ) 100
VDS(SC) VIN = 5V (V) 16
EAS (mJ) 490
TJ (°C) 150

Related Content

Packages

Technical Documents

Recommended Soldering Techniques

TN1.pdf

RoHS CofC